Photovoltaics
Spring 2019 lectured by Dr. Jian V. Li
Homework #3 (total of 100 points)
Assigned on 03-13-2019
Due on 03-20-2019
1) Useful parameters for Si
a. NC = 3.2e19 cm-3
b. NV = 1.8e19 cm-3
c. ni = 1e10 cm-3
d. Eg = 1.12 eV
2) kT=25.8meV
Problem #1 (60 points) Find the equilibrium electron and hole concentrations and
the location of the Fermi level (express EF with respect to Ei) for silicon at 300K if
the silicon contains the following concentrations of shallow dopant atoms:
(a) 1e16 cm-3 boron atoms
(b) 3e16 cm-3 arsenic atoms and 2.9e16 cm-3 boron atoms
Problem #2 (40 points) Estimate the total number of Si atom and outer shell
electrons in 1 cm3 of crystalline silicon.