Received February 26, 2017, accepted March 13, 2017, date of publication March 15, 2017, date of current version May 17, 2017. Digital Object Identifier 10.1109/ACCESS.2017.2683064 Optimizing OSSB Generation Using Semiconductor Optical Amplifier (SOA) for 5G Millimeter Wave Switching FADHEL SAADAOUI1 , MOHAMED FATHALLAH1 , AMR M. RAGHEB2,3 , MUHAMMAD IRFAN MEMON4 , HABIB FATHALLAH2,3,5 , (Senior Member, IEEE), AND SALEH A. ALSHEBEILI2,3 1 Department of Physics, Ecole Nationale Superieure d’ingenieurs de Tunis, University of Tunis, Tunis 1007, Tunisia Engineering Department, King Saud University, Riyadh 11421, Saudi Arabia in Radio Frequency and Photonics for the e-Society, King Saud University, Riyadh 11421, Saudi Arabia 4 Department of Computer Science, University of Lahore, Lahore 54000, Pakistan 5 Computer Department, College of Science of Bizerte, University of Carthage, Tunis 1054, Tunisia 2 Electrical 3 KACST-TIC Corresponding author: A. Ragheb (aragheb@ksu.edu.sa) This work was supported by the Deanship of Scientific Research, College of Engineering Center, King Saud University. ABSTRACT Millimeter waves (MMWs), operating at 30–300 GHz band, are very promising to the nextgeneration 5G wireless communication systems, enabling data rates of multi Gbps per user. Photonic technology is increasingly considered to play a key role in a wide range of MMW devices, modules, and subsystems that are essential to successfully build next generation MMW-based 5G networks. This work considers the switching function of MMWs exploiting nonlinearity in photonic devices. In this paper, we perform a systematic investigation of the optimum operating conditions that enable an optical single sideband wavelength conversion, by exploiting the nonlinear effects in a semiconductor optical amplifier (SOA). This principle of switching carefully exploits SOA’s four-wave mixing, cross-gain modulation in addition to self-phase modulation effects. The key parameters under investigation include the injection current, the wavelength spacing between the probe and the pump signals in addition to their respective powers. We experimentally determine the optimal operating conditions that maximize the sideband suppression ratio and simultaneously reduce the useless left sideband signal intensity, leading to a dispersion free transmission in optical fiber. Further, we experimentally demonstrate a photonic-based MMW switch of MMW signals having 30 GHz frequency and carrying 3 Gbaud/QPSK modulated signals. A 14-dB sideband suppression ratio of modulated signal is reported. INDEX TERMS Photonic switching, semiconductor optical amplifier (SOA), optical single sideband (OSSB), sideband suppression ratio (SSR). I. INTRODUCTION The exponential increase in the need for high-speed wireless network with large bandwidth, have motivated for the employment of millimeter wave (MMW) carrier frequencies for future next generation 5G networks [1]. Furthermore, carrier frequency escalation is being considered a key area of attention due to its applications in unprecedented data rate transfers, enabling uncompressed highdefinition media transfers, sensing and radar applications, virtual instantaneous access to massive libraries of information network clouds, and Internet-of-things (IOT) applications [2]. Indeed, Network speed and capacity enhancement is considered as one of the innovative engineering solutions for VOLUME 5, 2017 next generation (5G and 6G) communication systems [3], [4]. These solutions stress on small cell and massive multi input multi output (MIMO) concepts, network speed, and capacity enhancement. The establishment of next generation wireless networks, based on millimeter wave technology will require the development of a wide range of mature, efficient, and cost effective devices and modules that perform various functions in the network. Photonics technology is inherently high speed, broadband, and of low loss. Further, it is a promising solution to break the bottleneck and limitations in the area of microwave [5]–[7]. It will inevitably play a key role at the core of these functions and sub-systems. Photonic-based 2169-3536 2017 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information. 6715 F. Saadaoui et al.: Optimizing OSSB Generation Using SOA for 5G MMW Switching TABLE 1. Comparison of recent demonstrations of wireless over fiber systems. devices and settings are increasingly proposed to achieve signal processing functions that are essential for the generation and detection of MMW signals. In fact, a number of ways have recently been demonstrated in order to produce MMW frequencies using photonics, including photonic mixing [8]–[11], four wave mixing (FWM) in SOA [4], quantum cascade lasers [12], and laser pulse techniques [13]. Additionally, photonics have been widely incorporated in radio over fiber (RoF) systems and microwave modules including multiplexing/de-multiplexing [14], frequency tripling [15], and radio frequency (RF) switching [16]. In this respect, an increasing number of demonstrations have been reported in literature with regards to indoor and outdoor fiber wireless (FiWi) transmission in V, W, and J bands [17]–[25]. In the V-band (40-60GHz) much interest is considered for next generation 5G communication systems. At 40 GHz, a 2 m wireless link was proposed in [18], with single channel tranmsission of 2Gbps using quadrature phase shift keying (QPSK) scheme. For 50 GHz, a 1.2 m FiWi link was established for 1Gbps data trasnmission over multichannels, using filter bank multicarrier (FBMC) with Mary quadrature amplitude modulation (MQAM, M=16) [19]. Likewise, a 60GHz orthogonal frequency division multiplexed (OFDM)/QPSK signal is optically generated and wirelessly transmitted over 0. 6m, carring 1.2Gbps single channel transmission [20]. On the other hand, the W-band (70-110GHz) has shown promising solution for broadband wireless communication. For instance, the highest transmission rate of 128Gbps at 100GHz, wireless single channel was presented in [21] with spectral effeciency of 5.2 b/s/Hz, achieved using dual polrization (DP)/QPSK and 2 × 2 MIMO system. Additionally, the longest tranmission link of 1km outdoor has been reported in [22], for 10Gbps amplitude shift keying (ASK), tranmsitted over 6716 120GHz single wireless channel. Moreover, the low atmosphric absorption in the 200 –300GHz (J-band) attracted an inreasing interest for short- and middel-range wireless backhaul communication [23]. In this regard, 100Gbps transmission rate has been reported in [24] and [25] at 237.5 GHz and 250GHz, respectively. The latter was based on multichannel transmission. Table I summerizes and compares recent experiemntal demonstrations in terms of carrier frequency, number of channels, data rate (Rt ), spectral effeiciney (SE), baud rate (BR), wireless link length (LL), fiber length (FL), and tranmsission envirenment and technology. Furthermore, hybrid devices that involve electronics and photonics will potentially play a key role in the future high speed communication networks. Photonics switches promise a number of significant advantages over electronics switches. This includes high data rate switching [28], fast switching time [29], [30], compatibility to the input optical signals (i.e. no need for O/E, E/O, and MUX/De-MUX circuits), low latency, and transparency to data rates and modulation schemes [31]. Nonetheless, electronic switches still show important advantages represented in small footprint, low cost, and powerful digital capabilities [32]. A set of photonic-based switching technologies that imply optical single side band (OSSB) generation has been recently proposed [33]–[41]. This includes sideband filtering that requires a narrowband optical filter to be carefully tuned to the specific sideband [33], [34], OSSB generation using dual electrode Mach-Zehnder interferometer modulator (MZM) [35], Sagnac structure [36], [37], and various hybrid modulator structures [38], [39]. In [40], the OSSB generation has been proposed using a compact integration of silicon-on-insulator material and coupled resonator optical waveguide. Among photonic-based switching technologies, VOLUME 5, 2017 F. Saadaoui et al.: Optimizing OSSB Generation Using SOA for 5G MMW Switching signal. In Section II, we introduce and discuss the principle of MMW switch considered in this paper. In Section III, we explain our systematic methodology that targets to determine the optimum operating conditions pertaining to the switching principle. In Section IV, we evaluate the MMW switch in an end-to-end setup. FIGURE 1. (a) Basic schematic of 1:N optical switch (b) General structure of the 1:N photonic-based MMW switch; PD: photodiode; AWG: array waveguide grating; WC: wavelength conversion; CW: continuous wave; Fc: carrier frequency. nonlinear mediums such as semiconductor optical amplifiers (SOAs) and high nonlinear fiber (HNLF) can be considered to develop a low cost switching techniques. Contrary to HNLF, SOA reduces the high power requirement of injected laser signal. The nonlinear phenomenon of FWM inside SOA provides transparency to modulation format and bit rate, in addition to high conversion efficiency [42], [43]. Very recently, Zhu et al. [41] proposed a novel photonic RF switching technique based on OSSB wavelength conversion for RoF applications. Fig. 1 shows a general structure for 1 × N all optical mm-wave switch. The input signal of the AWG is the OSSB (switched signal) that is chosen to fall in a standard ITU channel sub-band (or interval). Once the latter is launched to the AWG, it will be delivered at the wanted output and then directed to the designated antenna element (or array sector, or base station) for radiation depending on the application. If another output (or antenna) is needed for radiation, the OSSB signal should fall in another respective ITU channel sub-band accordingly. Obviously, the choice of the appropriate pump wavelength versus the input probe (or data) wavelength decides about ITU sub-band in which the OSSB should fall. In this paper, we present an experimental systematic approach to identify the operating conditions for photonic based mm-wave switching for the next generation (5G) wireless communication using four wave mixing (FWM), selfphase modulation (SPM), and cross gain modulation (XGM) effects in SOA. The key parameters under consideration include the injection current, wavelength spacing between the probe and pump signals, in addition to their respective powers. We experimentally determine the optimal operating conditions that maximize the sideband suppression ratio (SSR) and simultaneously reduce the useless sideband signal intensity, leading to a dispersion free transmission in optical fiber. Further, we demonstrate for the first time, to the best of our knowledge, a photonic-based MMW switch for 30GHz MMW carrier modulated by a 3Gbaud-QPSK multilevel VOLUME 5, 2017 FIGURE 2. Principle of all-optical switching using nonlinear FWM effect in SOA. II. PRINCIPLE OF PHOTONICS BASED MMW SWITCH As illustrated in Fig. 2, the modulated data signal is combined linearly with a second continuous wave (CW) and launched to SOA, where the two waves will simultaneously experience a set of three nonlinear phenomena. The first is the FWM which is the mostly nonlinear process studied in literature [44]. Both optical waves, the probe wave (i.e. data signal) with frequency wpro given by Epro = Apro exp(j(wpro t − ϕpro )) and the CW with frequency wpum , expressed as Epum = Apum exp(j(wpum t − ϕpum )), will beat together inside the SOA and modulate the carrier density and the carrier distribution in the active media, generating a dynamic index variation and gain gratings. The interaction between both waves and these gratings results in the generation of two new waves wi = 2wpro − wpum and wsw = 2wpum − wpro . The output switched signal under investigation is given by [42] Esw = Apro A∗pum η cos θ exp(j(wsw t − ϕsw )) (1) where η is the conversion efficiency inversely proportional to the frequency difference between the beaten light signals, θ is the angle between probe and pump light signals, and ϕsw = 2ϕpum − ϕpro where ϕpum and ϕpro are the phases of pump and probe signals, respectively. The switched optical power achieves maximum output when the polarization for both beaten signals are parallel to each other. It is worthy to note that the application suggested here considers a switch where all devices are located inside the same instrument, and the polarization control (PC) devices are used to align both beaten signals. For applications that involve long distance transmission of the data signal, the polarization can rotate randomly and should need polarization monitoring at the 6717 F. Saadaoui et al.: Optimizing OSSB Generation Using SOA for 5G MMW Switching reception in order to ensure the alignment. Note that if the wavelength λpro or λpum is carefully selected, the wavelength of the switched signal λsw can be generated corresponding to a desired channel of the wavelength division multiplexer (WDM). The optical single sideband signal at λsw corresponds to specific output port number of the 1:N switch. Thus, the photonic switching of the MMW signals can be realized. The nonlinear dynamics in SOA, responsible for the emission process of FWM, are based on intra-band and inter-band effects. The inter-band effect is the change of the carrier density due to carrier depletion caused by stimulated emission, which is referred to as carrier density pulsation (CDP) [45]. The intra-band effects are firstly associated to the mechanism of spectral hole burning (SHB) causing a deviation from Fermi distribution and secondly to free carriers at low energy levels, which are removed by stimulated emission or transferred to higher levels due to free carrier absorption. This phenomenon is known as carrier heating (CH) [45]. The second effect is the cross gain modulation (XGM) that converts the data initially carried by the modulated probe signal to the continuous wave pump signal. When high optical power is injected into the active region of the SOA, the carrier concentration is depleted through the stimulated emission. This is known as gain saturation and it can be used to convert data from one wavelength to another [46]. The modulated signal with highest power will modulate the gain of the SOA and this modulation will be imposed on the lower power (CW) pump signal. The third effect is the phase modulation (PM) in SOA which is governed by the variation of carrier density owing to change of optical power [47], [48]. The modulated optical double side band signal (ODSB) will experience a SPM effect inside the OSA. Hence, no need for filtering at the output of the SOA to select one of the sidebands and drop the other. The SOA’s output becomes an optical single side band (OSSB) signal. One of the key contributions of this paper is to identify the optimum or suboptimum operating conditions in order ensure intrinsic elimination of one of the sidebands and transfer most of the available power to the other sideband. The output optical single side band (OSSB) field can be expressed as [48] i h m Epro (t) = Apro + sin(wm t) n h2 io mα × exp i wpro t + sin(wm t + β) (2) 2 where wm is the MMW source frequency, m is the modulation index, α is the chirp parameter, and β is the phase difference between the amplitude modulation part and phase modulation part in (2). At high frequency, β is close to π/2 [47], additionally, the chirp parameter is a power dependent factor and we have to make it close to unity such that both modulation indexes (i.e. AM and PM) become the same to realize the generation of OSSB modulated signal. This can be controlled by the input power of the SOA [47]. 6718 FIGURE 3. (a) Experimental setup for the proposed photonics based MMW switch. OC: optical coupler; VOA: variable optical attenuator; MZM: Mach Zehnder modulator; PC: polarization controller; OSA optical spectrum analyzer; SOA: semiconductor optical amplifier; VSG: vector signal generator; AWG: arbitrary waveform generator; (b) Measured optical spectrum at the output of Kamilian SOA. III. EXPERIMENTAL RESULTS AND DISCUSSION The experimental set-up used to generate OSSB signal by phase modulation in SOA is shown in Fig. 3 (a). The probe light beam is generated by a DFB fiber laser source and modulated, using Fujitsu FTM7977HQA Mach-Zehnder modulator (MZM), by a 3 Gbaud QPSK electrical signal generated using 215 − 1 pseudorandom binary sequence (PRBS). The QPSK signal is carried over a 30 GHz MMW carrier generated by Keysight vector signal generator E8267D. The continuous pump wavelength is provided by tunable laser source with wavelength stability of 2.5 pm. The two beams are combined using a 50:50 optical coupler (OC) and launched into Kamilian NL-L1-C-FA SOA having a gain recovery time of 25 ps and polarization dependence of 1 dB. The power measurements of the output spectra have been accomplished using Keysight optical spectrum analyzer (OSA-86140B) with 0.06nm resolution bandwidth. In Fig. 3 (b), we present the optical spectrum obtained at the output of the SOA for 250mA injection current. The powers of the probe and pump beams are maintained constants at 2.51 and 2.41 dBm, respectively. The wavelengths are set to 1550.116 and 1549.315 nm. It is clearly seen in this figure that the FWM effect is observed and four main peaks are obtained corresponding to the original probe and pump beams, in addition to the generated idler and switched beams. The modulated signal is successively switched to VOLUME 5, 2017 F. Saadaoui et al.: Optimizing OSSB Generation Using SOA for 5G MMW Switching FIGURE 4. Power variation of the right (square) versus the left (circle) switched signals as a function of the SOA injection current. FIGURE 5. Power variation of the right (square) versus the left (circle) switched signals as a function of the probe power. 1548.514 nm, where every main peak has two small lateral peaks corresponding to the detailed spectrum. The intensity of the small peaks depends on the injection current. The cross gain modulation XGM and self-phase modulation SPM phenomena are realized in this experience. For certain current values, the converted wavelength signal is less or more an OSSB signal. The sideband suppression ratio (SSR), defined as the power ratio between the two first order side bands, is used to evaluate the performance of OSSB signals [41]. In Fig. 4 we show the measured change and the difference between the switched sidebands (i.e. left and right) with respect to SOA injection current varied from 10 to 250 mA. It is noted that the OSSB is more effective for injection current higher than Iinj = 60 mA. At this bias current, the population inversion starts to be realized and the population density in the excited states has exceeded that of the ground states in the active region of the SOA. For the following measurements, we set the SOA injection current to 200 mA corresponding to a maximum of 14 dB SSR (i.e. lowest magnitude of the left sideband signal). A lower intensity of the left sideband should lead to a better dispersion free transmission in optical fiber. In fact, dispersion in optical fiber highly increases for any signal bandwidth increase. Hence, the benefit of SSB from the fact that its bandwidth is much lower than that of the DSB signal. In the subsequent steps of our investigation, we target to examine the effect of the probe power on the SSR, where the intensity of the switched left sideband needs to be minimized. Fig. 5 shows the magnitude of both sidebands (right and left) as a function of the probe power and the difference between them. The pump beam power is set constant at 2.41 dBm and the wavelengths for both beams are fixed at 1550.116 and 1549.315 nm, respectively. We observe the behavior of both side bands in various regimes of probe power starting by low values (Region A in Fig. 5). When we increase the probe power, the depletion of the carrier concentration in the SOA active region, through stimulated emission, is improved. Then, this leads to higher carrier density modulation and consequently enhances the intensity of the right side band (Region B in Fig. 5). The decrease of the left side band is an intrinsic filtering that occurs in the SOA and can be mathematically modeled by the Hilbert transform process. When the input power highly increases the SOA starts to reach a level of saturation, the converted signal decreases again (Region C in Fig. 5). Experimental results show that the maximum SSR is 14dB and the minimum intensity of the left sideband peak is obtained at a probe beam power of 2.7 dBm. Further investigation was carried out on the performance of the probe power on the magnitudes of the switched sidebands. The injection current is fixed at 200 mA whereas the probe beam power is set to 2.7 dBm, from previous results. In Fig. 6, we show the measured change and difference between magnitudes of switched beam sidebands as function of probe beam power variation. It is clear from this measurement that the optimal power probe beam is obtained at 2.5 dBm which corresponds to maximum SSR ratio of 14 dB. Here, we loop back our optimization procedure and investigate again the power of the switched signals (right and left) but for the newly identified probe and pump powers that are, respectively, 2.7 and 2.5 dBm. It appears that the most interesting bias current is 220 mA, see Fig. 7. The SSR did not change, but the magnitude of the left side band is minimized. Based on the obtained power levels, for both probe and pump signals, and the detuning wavelength, the best obtained conversion efficiency [43] is -16dB. Additionally, the measured optical signal to noise ratio of the switched signal is 26dB. The last experiment of this investigation consists of determining the optimal wavelength spacing between the probe and the pump beams. We analyze the performance of the OSSB generation of the switched signal for different values of the probe (data) and pump (CW) wavelengths for fixed VOLUME 5, 2017 6719 F. Saadaoui et al.: Optimizing OSSB Generation Using SOA for 5G MMW Switching FIGURE 6. Power variation of the right (square) versus the left (circle) switched signals as a function of the pump power. FIGURE 8. Power variation of the switched sidebands depending on the probe wavelength. TABLE 2. Calculation Of the output signals (switched) for some input signals (CW and data). FIGURE 7. Power variation of the right (square) versus the left (circle) switched signals as a function of the injection current for a probe power = 2.7 dBm and pump power = 2.5 dBm. powers of pump and probe, 2.5 and 2.7 dBm, respectively, and for the same injection current Iinj = 220 mA, based on previous investigations. We first choose four random values of the probe wavelength. Then, for each value, we vary the pump beam wavelength by steps of 0.4 nm (50 GHz) in order to observe the effect of the wavelength spacing 1λ, between both wavelengths (i.e. probe and pump), on the OSSB at the switched signal. We present in Fig. 8 the power variation of the right (dotted) versus the left (continuous) switched signals as a function of the pump wavelength for a probe wavelength λpro = 1550.116 nm. The best obtained SSR value is 14dB at probe wavelength λprobe = 1548.515 nm corresponding to wavelength spacing 1λ = 1.60 nm. We present in Table II (first three rows) the experimental values of λpum and λpro given the maximum of 14 dB SSR at the switched signal which is, according to the ITU-T grid standard, in consistency with the WDM channels for 6720 50GHz grid. In order to confirm these results, we choose two other values of λpum and λpro (last two rows) and we determine wsc that is also in consistency with the WDM ITUT grid. This table shows that standard and widely available WDM multiplexers/de-multiplexers based on array waveguide gratings can be easily used to enable our MMW switch at affordable cost. It should be also noted that the spacing between the probe and pump wavelength that provides the best SSR is not really constant, leading to a suboptimum operation. IV. DATA SWITCHING PERFORMANCE Based on the characterization of the best operation point in terms of injection current, probe power, pump power, and wavelength spacing, we measured the end-to-end performance of the whole switch. A proof of concept is presented in Fig. 9. An optical tunable filter (Santec OTF-350) is used in order to suppress the switched carrier (i.e. not the band) and pass only the remaining switched sideband that is carrying the MMW signal. This filtering is used only for performance evaluation and improvement since it simultaneously eliminates the unwanted carrier and minimizes the background noise. An erbium doped fiber amplifier (EDFA) is used in order to amplify the signal at the output of the OTF. The amplified signal is coherently demodulated using VOLUME 5, 2017 F. Saadaoui et al.: Optimizing OSSB Generation Using SOA for 5G MMW Switching affects the conversion efficiency. In addition, the MMW is modulated using QPSK scheme instead of the probe wavelength itself. V. CONCLUSION FIGURE 9. Experimental setup for the end-to-end performance measurement of the switch. We have reported the needs to define the optimum operating point of the SOA by the systematic experimental investigation of the OSSB based SOA. The SOA’s injection current, input lasers’ powers and wavelengths detuning are parametrically analyzed. Moreover, a photonic-based MMW switch is demonstrated for 30GHz MMW carrier modulated by a 3Gbaud-QPSK multilevel signal which is more appropriate for application in 5G communication system. A 14dB SSR is achieved for optimum OSSB data switching with a conversion efficiency of -16 dB. Basically, for low received power, we successfully switch the 30GHz MMW with BER less than forward error correction (FEC) limit. A 6Gbps QPSK signal carried over 30GHz is successfully switched over a detuning wavelength of 1.6 nm. REFERENCES FIGURE 10. BER measurement and comparison between three cases of right sideband wavelengths: the switched, after SOA, and back to back. the Keysight N4391A optical modulation analyzer (OMA). The performance of the switched signal is evaluated through end-to-end bit error rate (BER) measurement. We achieved BER measurements for three scenarios for the purpose of comparison. The first scenario corresponds to the wished switched wavelength (the right switched sideband). The second corresponds to the right sideband of the probe wavelength at the output of the SOA (referred to as ASOA). The third is to the back to back (B2B) signal which is the right sideband signal of the probe before beating with probe signal inside the SOA. In Fig.10, we present the comparison curve of the BER versus the received power at the OMA for 3Gbaud-QPSK data. It is clear that the switching penalty power is around 7 dB for 1E-3 BER. 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Jiang et al., ‘‘Improved optical single-sideband signal generation using the self-modulation birefringence difference in semiconductor optical amplifier,’’ Opt. Lett., vol. 32, no. 17, pp. 2580–2582, Sep. 2007. FADHEL SAADAOUI received the License in fundamental physics in 2012 and the master’s degree in physics of materials from the High School of Sciences and Technologies Tunis, University of Tunis, Tunisia, in 2014, where he is currently pursuing the Ph.D. degree with the Physics and Chemistry Department, National High School of Engineers Tunis. His current research interests include semiconductor optical amplifier and semiconductor ring lasers. MOHAMED FATHALLAH was born in Ras Jebel, Tunisia, in 1947. He received the Dipl.Eng. degree from the School of Radioelectricity of Paris, France, in 1971, the M.S. degree from the University of Tunis in 1977, and the Ph.D. degree in physics from the Department of Physics, Faculty of Sciences of Tunis, in 1980. He joined the Tunisian Television and spent six years. He joined the University of Tunis El Manar as an Assistant Professor in 1980 and the University of Tunis as an Associate Professor in 1989. He became a Professor in 1994. He spent five years in King Saud University since 2005. He is currently a Professor Emeritus with the University of Tunis. He has authored or co-authored over 70 papers and two books. His research interest has been in physics of semiconductors and optoelectric devices. VOLUME 5, 2017 F. Saadaoui et al.: Optimizing OSSB Generation Using SOA for 5G MMW Switching AMR M. RAGHEB received the B.S. (Hons.) and M.Sc. degrees from Tanta University, Egypt, in 2001 and 2007, respectively, and the Ph.D. degree from King Saud University, Riyadh, Saudi Arabia, in 2015, all in electrical engineering. He was a Teaching Assistant (TA) with Tanta University from 2003 to 2008. He was a TA with King Saud University from 2010 to 2015. He has over five years of experience with the Photonics Telecommunication Laboratory. He is currently a Post-Doctoral Fellow with the King Abd-Alaziz City for Science and Technology–Technology Innovation Center in RF and Photonics, Riyadh. He has contributed in the research areas, such as photonic-microwave integration, quantum dash-based lasers, free space optical communication, coherent optical receivers, multi-format high speed optical transmitter, and passive optical networks. MUHAMMAD IRFAN MEMON was born in Khairpur, Pakistan. He received the B.Eng. degree (Hons.) in information technology from Hamdard University, Karachi, Pakistan, in 2003, and the Ph.D. degree in engineering from the University of Bristol, Bristol, U.K., in 2011. He has held lecturing position at the COMSATS Institute of IT, Islamabad, Pakistan. He has also a Post-Doctoral Researcher with the Prince Sultan Advanced Technologies Research Institute, King Saud University, Riyadh, Saudi Arabia, for over three years. He is currently an Associate Professor with the University of Lahore, Lahore, Pakistan. His research interests cover radio over fiber systems, optical networks, all-optical memory systems, with over 40 technical publications. He is a Chartered Engineer in U.K. and a member of the Institution of Engineering and Technology, U.K. VOLUME 5, 2017 HABIB FATHALLAH (S’96–M’01–SM’15) born in Ras Jebel, Tunisia, in 1969. He received the B.S.E.E. degree (Hons.) from the National Engineering School of Tunis in 1994, and the M.S. and Ph.D. degrees in electrical and computer engineering from Laval University, Canada, in 1997 and 2001, respectively. In 2008, he joined the Electrical Engineering Department, College of Engineering, King Saud University (KSU), Saudi Arabia. In 2011, he co-founded the KACST Technology Innovation Center on Radio Frequency, Wireless and Photonics, KSU. He was an Adjunct professor with the Department of Electrical and Computer Engineering, from 2003 to 2012, and a Senior Scientist with the Center of Optics Photonics and Laser, Canada, from 2006 to 2008. From 1999 to 2005, he has industrial experience mainly at Access Photonic Networks Inc., Canada, as the Founder, the President, and the Chief Technology Officer. He fathered the use of Bragg gratings technology for all-optical/all-fiber coding/decoding in optical CDMA systems the application of all optical coding for FTTX monitoring. He initiated and managed over 20 research, innovation and development, and academic and industry projects in Canada and MENA. He has authored two books and close to 100 publications, and holds 12 patents. His research contributions have been cited over 1100 times. His former and current research interests include waveband light sources, optical code division multiple access OCDMA, optical coding/decoding, fiber-to-the-X passive optical networks technologies and monitoring, erbium doped fiber amplifiers, fiber Bragg grating manufacturing and applications for communications and sensing, few mode fibers-space division multiplexing, electromagnetic wave energy harvesting, optical antennas, ultra high speed communications 400G & Terabit per carrier, optical OFDM, and superchannel systems. SALEH A. ALSHEBEILI was the Chairman of the Electrical Engineering Department, King Saud University, from 2001 to 2005. He has over 25 years of teaching and research experience in the area of communications and signal processing. He was a member of the Board of Directors with the King Abdullah Institute for Research and Consulting Studies, from 2007 to 2009, a member of the Board of Directors with the Prince Sultan Advanced Technologies Research Institute, from 2008 to 2017, where he was the Managing Director from 2008 to 2011, and the Director of the Saudi-Telecom Research Chair from 2008 to 2012. He has been the Director of the Technology Innovation Center, RF and Photonics in the e-Society, funded by the King Abdulaziz City for Science and Technology (KACST), since 2011. He is currently a Professor with the Electrical Engineering Department, King Saud University. He has been on the Editorial Board of the Journal of Engineering Sciences of King Saud University from 2009 to 2012. He has also an active involvement in the review process of a number of research journals, KACST general directorate grants programs, and national and international symposiums and conferences. 6723