BHARATHIAR INSTITUTE OF ENGINEERING FOR WOMEN
DEVIYAKURICHI – 636 112
DEPARTMENT OF SCIENCE AND HUMANITIES
DEPT / YEAR / SEM
SUBJECT TITLE
STAFF
: ECE / I / II
: EC6201 - ELECTRONIC DEVICES
: Ms. CHANDNI, AP/ECE
1. TEXT BOOKS
A. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc GrawHill Inc. 2007.
2. REFERENCES:
B. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978.
C. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice Hall,
10th edition,July 2008.
D. M.K.Ramachandran, M.K.Ravichandran and T.Ravikumar, “Electronic Devices”, VRB Publishers
E. U.A.Bakshi and A.P.Godse, “Electronic Devices”, Technical Publications
3. LECTURE PLAN:
S.No
Topic
UNIT-1
SEMICONDUCTOR DIODE
1.
Introduction to semiconductor devices
2.
3.
4.
5.
6.
7.
8.
9.
PN Junction Diode
Current Equations
Diffusion Current
Drift Current densities
Forward bias characteristics
Reverse bias characteristics
Switching Characteristics
Breakdown region in diode
Total Hours 9
UNIT - II
BIPOLAR JUNCTION
10.
NPN -PNP -Junctions &Current equations
11.
Early effect
12.
Input and Output characteristics of CB
13.
Input and Output Characteristics of CE
14.
Input and Output Characteristics of CC
Hybrid -π model,
15.
h-parameter model
.16.
Ebers Moll Model
17.
Multi Emitter Transistor
18.
Gummel Poon-model
Total Hours 9
UNIT-III
FIELD EFFECT TRANSISTOR
19.
JFETs 20.
Drain and Transfer characteristics
21.
Current equations & Pinch off voltage and its significance
22.
MOSFET- Characteristics&D-MOSFET, E-MOSFET
23.
Threshold voltage
24.
Channel length modulation
25.
Equivalent circuit model and its parameters
26.
FINFET
No.of
Hours
Books
Page.No
1
D
1.3
1
1
1
1
1
1
1
1
D
D
D
D
D
D
D
D
1.26-1.28
1.17-1.18
1.17-1.18
1.17-1.18
1.26-1.27
1.28
1.48-1.51
1.51-1.52
1
1
1
1
1
2.4-2.6
2.12
2.10-2.14
2.14-2.18
2.18-2.21
2.29-2.30,
2.49-2.58
1
1
1
D
D
D
D
D
E
D
D
E
D
1
1
1
1
1
1
1
1
D
D
D
D
D
E
D
D
3.4-3.7
3.10-3.13
3.17
3.23-3.24
3.25-3.32
3.38
3.38-3.41
3.41-3.43
1
2.60-2.62
2.41
2.62-2.67
27.
DUAL GATE MOSFET
Total Hours 9
UNIT - IV
SPECIAL SEMICONDUCTOR DEVICES
28.
Metal-Semiconductor Junction
29
MESFET
30.
Schottky barrier diode
31.
Zener diode
32.
Varactor diode
33.
Tunnel diode
34.
Gallium Arsenide device
35.
LASER diode
36.
LDR.
Total Hours
9
UNIT – V
POWER DEVICES AND DISPLAY DEVICES
37.
UJT
38.
SCR,
39.
Diac, Triac
40.
Power BJT- Power MOSFET
41.
DMOS-VMOS
42.
LED
LCD43.
Photo transistor
44.
Opto Coupler
Solar Cell
45.
CCD
Total Hour 9
TOTAL HOURS=45
1
D
3.43-3.46
1
1
1
1
1
1
1
1
1
D
D
D
D
D
D
4.3
4.3-4.5
4.5-4.8
4.8-4.14
4.14-4.17
4.17-4.21
4.38-4.41
4.23-4.26
4.26-4.29
E
D
D
1
1
1
1
1
1
D
D
D
1
D
1
D
E
D
1
D
D
D
5.3-5.7
5.7
5.13-5.17
5.19-5.21
5.22-5.24
5.26-5.30
5.30-5.36,
5.37-5.38
5.43-5.45
5.55-5.57
5.45-5.48
4.TESTS
As per the schedule proposed by the College/University.
STAFF INCHARGE
(Ms. CHANDNI, AP/ECE)
HOD
PRINCIPAL