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2SD313 UTC

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UNISONIC TECHNOLOGIES CO., LTD
2SD313
NPN SILICON TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR

DESCRIPTION
The UTC 2SD313 is designed for use in general purpose
amplifier and switching applications.

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD313L-x-TA3-T
2SD313G-x-TA3-T
2SD313L-x-TF3-T
2SD313G-x-TF3-T
2SD313L-x-TQ2-T
2SD313G-x-TQ2-T
2SD313L-x-TQ2-R
2SD313G-x-TQ2-R
Note: Pin assignment: E: Emitter
B: Base
C: Collector

Package
TO-220
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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2SD313

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
RATINGS
UNIT
60
V
60
V
5
V
3
A
TO-220
1.75
Collector Dissipation
TO-220F
PC
1.6
W
TO-263
1.73
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
IC
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter On voltage
Gain Band width Product

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VBE(ON)
fT
TEST CONDITIONS
IC=1mA
IC=10mA
IE=100uA
VCB=20V, IE=0
VEB=4V, IC=0
IC=1A, VCE=2V
IC=0.1A,VCE=2V
IC=2A, IB=0.2A
VCE=2V, IC=1A
VCE= 5V, IC= 0.5A
MIN
60
60
5
TYP
MAX
0.1
1.0
320
40
40
1.0
1.5
8
UNIT
V
V
V
mA
mA
V
V
MHz
CLASSIFICATION ON hFE
RANK
RANGE
C
40-80
D
60-120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
E
100-200
F
160-320
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2SD313
NPN SILICON TRANSISTOR
h FE
Saturation Voltage, VCE(SAT) (mV)
TYPICAL CHARACTERISTICS

VBE(SAT) vs. IC
SOA
10000
10
Collector Current (A)
VBE(SAT) (mA)
IC=10IB
1000
100
20mS
1
dc
0.1
10
100
1000
10000
1
10
100
Collector to Emitter Voltage (V)
VBE(ON) (mV)
Collector Current (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD313
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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