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FAKULTI KEJURUTERAAN ELEKTRONIK DAN KEJURUTERAAN KOMPUTER FUNDAMENTAL OF ELECTRONICS (BENE 2123) EXERCISE 5 Part A: Depletion–type MOSFET 1. Sketch the basic construction of a n-channel and p-channel depletion–type MOSFET. n-channel depletion-type MOSFET p-channel depletion-type MOSFET 2. Given ID= 14 mA and VGS = -2V, determine IDSS if Vp= -5 V. 3. For the self bias configuration given, determine: a. IDQ and VGSQ b. VDS and VD 14V 1.2kΩ IDSS = 6 mA Vp = -4 V 0.43kΩ 4(a) 1 4(b) Part B: Enhancement–type MOSFET 4. Sketch the basic construction of a n-channel and p-channel enhancement–type MOSFET. n-channel enhancement-type MOSFET 5. p-channel enhancement-type MOSFET What are the significant difference between the construction of E-MOSFET and D-MOSFET? 2 6. Explain the basic operation of E-MOSFET. An applied gate-to-source voltage greater than VT will establish a channel between the drain and source for the flow of charge in the output circuit. 7. For E-MOSFET: a. Given VGS(th) = 4 V and ID(on) = 4mA at VGS(on) = 6V. Determine k and write general equation for I D. 8. b. Sketch the transfer characteristics of the devices. c. Determine ID at VGS = 2,5 and 10V. Given k = 0.4x10-3 A/V2 and ID(on) = 3mA with VGS(on) = 4V. Determine VT. 3 9. For the self bias configuration given, determine ID and VDS. VGS(TH) = 4V VGS(on) = 7V ID(on) = 5mA VDD = 22V (Note: VDS = VGS) 4 10. For the voltage divider configuration given, determine: a. IDQ and VGSQ b. VD and VS 24V 2.2kΩ 10MΩ 6.8MΩ VGS(th) = 3V VGS(on) = 6V ID(on) = 5mA 0.75kΩ 10(a) 10(b) 5 6 7