FAKULTI KEJURUTERAAN ELEKTRONIK DAN KEJURUTERAAN KOMPUTER
FUNDAMENTAL OF ELECTRONICS (BENE 2123)
EXERCISE 5
Part A: Depletion–type MOSFET
1.
Sketch the basic construction of a n-channel and p-channel depletion–type MOSFET.
n-channel depletion-type MOSFET
p-channel depletion-type MOSFET
2.
Given ID= 14 mA and VGS = -2V, determine IDSS if Vp= -5 V.
3.
For the self bias configuration given, determine:
a.
IDQ and VGSQ
b.
VDS and VD
14V
1.2kΩ
IDSS = 6 mA
Vp = -4 V
0.43kΩ
4(a)
1
4(b)
Part B: Enhancement–type MOSFET
4.
Sketch the basic construction of a n-channel and p-channel enhancement–type MOSFET.
n-channel enhancement-type MOSFET
5.
p-channel enhancement-type MOSFET
What are the significant difference between the construction of E-MOSFET and D-MOSFET?
2
6.
Explain the basic operation of E-MOSFET.
An applied gate-to-source voltage greater than VT will establish a channel between the drain and
source for the flow of charge in the output circuit.
7.
For E-MOSFET:
a.
Given VGS(th) = 4 V and ID(on) = 4mA at VGS(on) = 6V. Determine k and write general equation for
I D.
8.
b.
Sketch the transfer characteristics of the devices.
c.
Determine ID at VGS = 2,5 and 10V.
Given k = 0.4x10-3 A/V2 and ID(on) = 3mA with VGS(on) = 4V. Determine VT.
3
9.
For the self bias configuration given, determine ID and VDS.
VGS(TH) = 4V
VGS(on) = 7V
ID(on) = 5mA
VDD = 22V
(Note: VDS = VGS)
4
10. For the voltage divider configuration given, determine:
a.
IDQ and VGSQ
b.
VD and VS
24V
2.2kΩ
10MΩ
6.8MΩ
VGS(th) = 3V
VGS(on) = 6V
ID(on) = 5mA
0.75kΩ
10(a)
10(b)
5
6
7