SILICON CARBIDE TECHNOLOGY

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SILICON CARBIDE TECHNOLOGY
Transforming Power Conversion Designs
Semiconductor devices that enable reduced power losses are key for improving the performance, size and cost of
power electronics. Fairchild power semiconductors made from silicon carbide (SiC) are demonstrating dramatic
improvements at both the component and the system level compared to their silicon counterparts. The advantages
of silicon carbide are many, and they primarily stem from its wide band gap and high breakdown field properties.
This makes it possible to produce power transistors that block high voltages and have low series resistance, leading
to low conduction losses. The high band gap also allows power transistors to switch higher voltages and current at
higher temperatures. In addition, SiC power transistors are electrically robust with excellent short circuit capabilities.
Core SiC Benefits
Higher Power Density
Through higher switching frequency at same or
lower losses, enabling the use of smaller inductors,
heatsink and capacitors
•
Increase output power while maintaining
system form factor
•
Key SiC Features
•
Wide band gap (3.2 eV, 3x Si)
•
High break down field (2.4 MV/cm, 10x Si)
•
High thermal conductivity (4 W/cm°K, 3x Si)
•
High temperature stability (TJ ≥250°C, 3x Si)
Lower System Cost
•
Through lower losses and higher power density,
smaller cooling and increased power output for
the same hardware
•
Offer productivity improvement
fairchildsemi.com
SILICON CARBIDE TECHNOLOGY The SiC BJT: Most Efficient 1200 V Power Conversion Switch Ever Made
A growing assortment of power switch technologies are on the market and in development today, including several
that leverage the features of silicon carbide. Most promising among these choices are SiC bipolar junction transistors
(BJTs). They offer very fast switching speed; the industry’s lowest conduction losses; easy high temperature operation;
very good robustness; and ease of manufacturing. Working in conjunction with a properly designed gate driver, SiC
BJTs also offer safe operation with high ruggedness and reliability.
SiC BJT Features
Lowest Losses on the Market
Robust and Reliable
•
Lowest conduction losses (RON <2.2 mΩcm2 @ RT)
•
Normally OFF device
•
Very low switching losses
•
Highest rated operating temperature; TJ = 175°C
•
Lowest total losses; including driver losses
•
Positive temperature coefficient (R
); Easy paralleling
I-VON
Characteristics 150°C
•
High gain; SiC BJT DC current gain >70
•
No secondary breakdown
100 for SiC BJT
•
BJT 40A
No SiO2 gate oxide reliability issueSiC
FGL40N120AND T
I-V Characteristics 150°C
Fast Switching
SiC BJT 40A
FGL40N120AND T J = 125°C
Approximately 20 ns for turn-on and turn-off
•
Short circuit resistant
•
SwitchingI =behavior
is not temperature dependent
1000mA
•
Low leakage current
•
No currentI =tailing
750mA for SiC BJT
B
B
IC, A
55%
•
80
60
55%
40
IB = 750mA
0
IB = 500mA
20 17%
IB = 250mA
1
SiC BJT vs Si IGBT
2
3
4
5
V
I
VCE
EON
EOFF
Si IGBT
1200
40
3
2500
1800
SiC BJT
1200
40
1.6
1000
600
47%
60%
67%
UCE’ V
Improvement (lowered by)
EOFF -IC @ UDC = 800
V
I-V Characteristics
150°C
3000
EON, uJ
55%
IB = 750mA
IB = 500mA
20 17%
10
00
20
30 1
IC’ A
40 2
50 3
UCE’ V
4
3000
2500
2000
1500
5
4
5
2500
2000
1500
1000
500
0
3
SiC BJT TJ = 25°C
SiC BJT TJ = 150°C
FGL40N120AND T J = 125°C
3500
1000
IB = 250mA
45%
2
4000
SiC BJT TJ = 25°C
SiC BJT TJ = 150°C
FGL40A120AND T J = 125°C
3500
IB = 1000mA
1
EOFF -IC @ UDC = 800 V
EOFF, uJ
60
IB = 250mA
UCE’ V
4000
100
40
00
EON -IC @ UDC = 800 V
SiC BJT TJ = 25°C
SiC BJT 40A
SiC BJT TJ = 150°C FGL40N120AND T J = 125°C
80
FGL40N120AND T J = 125°C
IC, A
0
= 125°C
IB = 1000mA
IB = 500mA
17%
J
500
40%
0
10
20
30
IC’ A
40
50
0
45%
0
10
20
30
IC’ A
40
50
SILICON CARBIDE TECHNOLOGY
Applications
High Efficiency
Applications such as renewable energy, industrial systems and mobile power all require high efficiency, small size
and light weight. Fairchild is developing a series of device solutions that will offer the industry’s highest efficiency
compared to any other transistors available today. These components also eliminate many of the size, weight and
temperature tradeoffs associated with efficiency gains in silicon devices.
High Temperature
The ability for power semiconductors to provide reliable operation at high temperatures is critical for oil and
gas, power generation, commercial aviation, certain automotive and industrial designs. Fairchild is developing a
family of devices that feature very low leakage, optimized packaging, the industry’s highest temperature tolerances
and more robust operation.
Lower Losses, Faster Switching, Higher Power Density
•
Solar inverters
•
DC-AC inverters
•
Welding systems
•
PFC input stages
•
Mobile power
•
Motor drives
•
DC-DC converters
Higher Operating Temperatures
• High temp DC
• Motor and turbine
converters
controls
Roadmap: Fairchild’s investment and commitment to SiC technology will lead to
such future solutions as SiC BJT discretes, SiC diodes, SiC power modules, SiC
BJT IC drivers, SiC BJTs for high temperature operation.
•
High temp motor drivers
•Surveillance
•
High temp
actuator controls
SiC Expertise
The industry’s most experienced silicon carbide experts are not only developing next generation SiC components.
They are also making SiC designs easier to develop and implement for your power engineering team. Fairchild offers
a library of application notes and technical documentation; experienced field application engineers; and an SiCtrained design lab of technicians that can help with driver
simulations, analysis and characterizations; ruggedness and
reliability evaluation; and overall design implementation.
SiC Design Resource
Our SiC experts will soon begin publishing engineering
insights on SiC design options, challenges, and best practices for implementation techniques. If you would like to
receive this valuable design lab information, please sign up
at www.fairchildsemi.com/sic.
for a complete listing of sales representatives and sales offices, visit:
www.fairchildsemi.com/cf/sales_contacts
for information on fairchild products, tradeshows,
seminars and other items, register here:
www.fairchildsemi.com/my_fairchild
For datasheets, application notes, samples and more, please visit: www.fairchildsemi.com
PRODUCTS
Power Management
Advanced Load Switches
• Advanced Current Limited
Load Switches
• Slew Rate Controlled Load Switches
Backlighting Unit (BLU)
• CCFL Inverter ICs
• LED BLU Driver ICs
Battery Management
• Battery Charger ICs
• Current Sensing
Diodes & Rectifiers
• Bridge Rectifiers
•Diacs
•Rectifiers
• Schottky Diodes & Rectifiers
• Small Signal Diodes
• Transient Voltage Suppressors (TVS)
• Zener Diodes
Ground Fault Interrupt (GFI) Controllers
• Ground Fault Interrupt
(GFI) Controllers
IGBTs
• Discrete IGBTs
MOSFET and IGBT Gate Drivers
• All Drivers
• 3-Phase Drivers
• Half-Bridge Drivers
• High-Side Drivers
• Low-Side Drivers
• Synchronous Rectifier Drivers
MOSFETs
• Discrete MOSFETs
• Integrated Load Switches
• MOSFET/Schottky Combos
Motion Control
• BLDC/PMSM Controller
•SPM®
(Smart Power Modules)
• PFC SPM® (Smart Power Modules)
Non-Isolated DC-DC
• Charge-pump Converters
• DrMOS FET plus Driver
Multi-Chip Modules
• Step-down Controllers
(External Switch)
• Step-down Regulators,
Non-Synchronous
(Integrated Switch)
• Step-down Regulators, Synchronous
(Integrated Switch)
• Step-up Regulators
(Integrated Switch)
APPLICATIONS
DESIGN SUPPORT
Off-Line & Isolated DC-DC
• AC-DC Linear Regulators
• Flyback & Forward
PWM Controllers
• Flyback & Forward
PWM Controllers with
Integrated MOSFET
• LLC Resonant & Asymmetric Half
Bridge PWM Controllers
• LLC Resonant & Asymmetric
Half Bridge PWM Controllers
with Integrated MOSFETs
• Primary-Side Regulation
CV/CC Controllers
• Primary-Side Regulation CV/CC
Controllers with Integrated MOSFET
• Standard PWM Controllers
• Supervisory/Monitor ICs
Power Factor Correction
• Continuous Conduction
Mode (CCM) PFC Controllers
• Critical/Boundary Conduction
Mode (CrCM/BCM)
PFC Controllers
• Interleaved PFC Controllers
• PFC + PWM Combination
(Combo) Controllers
Transistors
•BJTs
•Darlingtons
• Digital/Bias-Resistor Transistors
•JFETs
• RF Transistors
• Small Signal Transistors
Voltage Regulators
•LDOs
• Positive Voltage Linear Regulators
• Negative Voltage Linear Regulators
• Shunt Regulators
• Voltage Detector
• Voltage Stabilizer
• Voltage to Frequency Converter
ANALOG & MIXED SIGNAL
Amplifiers & Comparators
• Comparators
• Operational Amplifiers
Audio Amplifiers
• Audio Subsystems
• Audio Headphone Amplifiers
• Audio Speaker Amplifiers
• Digital Microphone Amplifiers
Battery Protection ICs
• Battery Protection ICs
ABOUT FAIRCHILD
Interface
• LVDS
• Serializers/Deserializers
(µSerDes™)
• USB Transceivers
Signal Conditioning
• Video Filter Drivers
• Video Switch Matrix/Multiplexers
Signaling, Sensing & Timing
• Signaling, Sensing & Timing
• Timing
Switches
• Accessory Switches
• Analog Switches
• Audio Jack Detection Switches
• Audio Switches
• Bus Switches
• MIPI Switches
• Multi-media Switches
• USB Switches
• Video Switches
Logic
Buffers, Drivers, Transceivers
• Buffers
• Line Drivers
• Transceivers
Flip Flops, Latches, Registers
• Counters
• Flip Flops
• Inverters
• Latches
• Registers
Gates
• AND Gates
• Configurable Gates
• NAND Gates
• NOR Gates
• OR Gates
• Schmitt Triggers Multiplexer/Demultiplexer/
Decoders
• Decoders
• Demultiplexers
• Multiplexers
• Multivibrators
Voltage Level Translators
• Voltage Level Translators
LIGHTING ICs
• Fluorescent Lamp ICs
• HID ICs
• LED Lighting ICs
• Portable LED Drivers
Trademarks, service marks, and registered trademarks are the property of Fairchild Semiconductor
or their respective owners. For a listing of Fairchild Semiconductor trademarks and related information,
please see: www.fairchildsemi.com/legal
Lit. No. 100048-002 © 2012 Fairchild Semiconductor. All Rights Reserved.
Optoelectronics
High Performance Optocouplers
• High Speed Logic Gate
• High Performance Transistor
• Low Voltage, High Performance
• Specific Function
IGBT/MOSFET Gate Drivers
• IGBT/MOSFET Gate Drivers
Infrared
• Ambient Light Sensors
• Emitting Diodes
• Optical Interrupt Switches
• Photo Sensors
• Photo Sensor – Transistors
• Reflective Sensors
Phototransistor Optocouplers
• Isolated Error Amplifier
• Photo Darlington Output
• Phototransistor Output DC Sensing Input
• Phototransistor Output AC Sensing Input
TRIAC Driver Optocouplers
• Random Phase TRIAC Driver
• Zero Crossing TRIAC Driver
AUTOMOTIVE PRODUCTS
Automotive Discrete Power
• Automotive Ignition IGBTs
• Automotive IGBTs
• Automotive N-Channel MOSFETs
• Automotive P-Channel MOSFETs
• Automotive Rectifiers
Automotive Gate Drivers
• High Voltage
Gate Drivers (HVICs)
• Low Voltage Gate Drivers
Automotive Smart Power Switches
• Automotive Smart Power Switches
CIRCUIT PROTECTION
Reverse Polarity Protection
• Blocking Diodes
• Reverse Bias Protection Switches
• Schottky diodes
Transient Voltage Suppressors (TVS)
• Mid Power TVS
• Power TVS (> 400W)
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