SILICON CARBIDE TECHNOLOGY Transforming Power Conversion Designs Semiconductor devices that enable reduced power losses are key for improving the performance, size and cost of power electronics. Fairchild power semiconductors made from silicon carbide (SiC) are demonstrating dramatic improvements at both the component and the system level compared to their silicon counterparts. The advantages of silicon carbide are many, and they primarily stem from its wide band gap and high breakdown field properties. This makes it possible to produce power transistors that block high voltages and have low series resistance, leading to low conduction losses. The high band gap also allows power transistors to switch higher voltages and current at higher temperatures. In addition, SiC power transistors are electrically robust with excellent short circuit capabilities. Core SiC Benefits Higher Power Density Through higher switching frequency at same or lower losses, enabling the use of smaller inductors, heatsink and capacitors • Increase output power while maintaining system form factor • Key SiC Features • Wide band gap (3.2 eV, 3x Si) • High break down field (2.4 MV/cm, 10x Si) • High thermal conductivity (4 W/cm°K, 3x Si) • High temperature stability (TJ ≥250°C, 3x Si) Lower System Cost • Through lower losses and higher power density, smaller cooling and increased power output for the same hardware • Offer productivity improvement fairchildsemi.com SILICON CARBIDE TECHNOLOGY The SiC BJT: Most Efficient 1200 V Power Conversion Switch Ever Made A growing assortment of power switch technologies are on the market and in development today, including several that leverage the features of silicon carbide. Most promising among these choices are SiC bipolar junction transistors (BJTs). They offer very fast switching speed; the industry’s lowest conduction losses; easy high temperature operation; very good robustness; and ease of manufacturing. Working in conjunction with a properly designed gate driver, SiC BJTs also offer safe operation with high ruggedness and reliability. SiC BJT Features Lowest Losses on the Market Robust and Reliable • Lowest conduction losses (RON <2.2 mΩcm2 @ RT) • Normally OFF device • Very low switching losses • Highest rated operating temperature; TJ = 175°C • Lowest total losses; including driver losses • Positive temperature coefficient (R ); Easy paralleling I-VON Characteristics 150°C • High gain; SiC BJT DC current gain >70 • No secondary breakdown 100 for SiC BJT • BJT 40A No SiO2 gate oxide reliability issueSiC FGL40N120AND T I-V Characteristics 150°C Fast Switching SiC BJT 40A FGL40N120AND T J = 125°C Approximately 20 ns for turn-on and turn-off • Short circuit resistant • SwitchingI =behavior is not temperature dependent 1000mA • Low leakage current • No currentI =tailing 750mA for SiC BJT B B IC, A 55% • 80 60 55% 40 IB = 750mA 0 IB = 500mA 20 17% IB = 250mA 1 SiC BJT vs Si IGBT 2 3 4 5 V I VCE EON EOFF Si IGBT 1200 40 3 2500 1800 SiC BJT 1200 40 1.6 1000 600 47% 60% 67% UCE’ V Improvement (lowered by) EOFF -IC @ UDC = 800 V I-V Characteristics 150°C 3000 EON, uJ 55% IB = 750mA IB = 500mA 20 17% 10 00 20 30 1 IC’ A 40 2 50 3 UCE’ V 4 3000 2500 2000 1500 5 4 5 2500 2000 1500 1000 500 0 3 SiC BJT TJ = 25°C SiC BJT TJ = 150°C FGL40N120AND T J = 125°C 3500 1000 IB = 250mA 45% 2 4000 SiC BJT TJ = 25°C SiC BJT TJ = 150°C FGL40A120AND T J = 125°C 3500 IB = 1000mA 1 EOFF -IC @ UDC = 800 V EOFF, uJ 60 IB = 250mA UCE’ V 4000 100 40 00 EON -IC @ UDC = 800 V SiC BJT TJ = 25°C SiC BJT 40A SiC BJT TJ = 150°C FGL40N120AND T J = 125°C 80 FGL40N120AND T J = 125°C IC, A 0 = 125°C IB = 1000mA IB = 500mA 17% J 500 40% 0 10 20 30 IC’ A 40 50 0 45% 0 10 20 30 IC’ A 40 50 SILICON CARBIDE TECHNOLOGY Applications High Efficiency Applications such as renewable energy, industrial systems and mobile power all require high efficiency, small size and light weight. Fairchild is developing a series of device solutions that will offer the industry’s highest efficiency compared to any other transistors available today. These components also eliminate many of the size, weight and temperature tradeoffs associated with efficiency gains in silicon devices. High Temperature The ability for power semiconductors to provide reliable operation at high temperatures is critical for oil and gas, power generation, commercial aviation, certain automotive and industrial designs. Fairchild is developing a family of devices that feature very low leakage, optimized packaging, the industry’s highest temperature tolerances and more robust operation. Lower Losses, Faster Switching, Higher Power Density • Solar inverters • DC-AC inverters • Welding systems • PFC input stages • Mobile power • Motor drives • DC-DC converters Higher Operating Temperatures • High temp DC • Motor and turbine converters controls Roadmap: Fairchild’s investment and commitment to SiC technology will lead to such future solutions as SiC BJT discretes, SiC diodes, SiC power modules, SiC BJT IC drivers, SiC BJTs for high temperature operation. • High temp motor drivers •Surveillance • High temp actuator controls SiC Expertise The industry’s most experienced silicon carbide experts are not only developing next generation SiC components. They are also making SiC designs easier to develop and implement for your power engineering team. Fairchild offers a library of application notes and technical documentation; experienced field application engineers; and an SiCtrained design lab of technicians that can help with driver simulations, analysis and characterizations; ruggedness and reliability evaluation; and overall design implementation. SiC Design Resource Our SiC experts will soon begin publishing engineering insights on SiC design options, challenges, and best practices for implementation techniques. If you would like to receive this valuable design lab information, please sign up at www.fairchildsemi.com/sic. for a complete listing of sales representatives and sales offices, visit: www.fairchildsemi.com/cf/sales_contacts for information on fairchild products, tradeshows, seminars and other items, register here: www.fairchildsemi.com/my_fairchild For datasheets, application notes, samples and more, please visit: www.fairchildsemi.com PRODUCTS Power Management Advanced Load Switches • Advanced Current Limited Load Switches • Slew Rate Controlled Load Switches Backlighting Unit (BLU) • CCFL Inverter ICs • LED BLU Driver ICs Battery Management • Battery Charger ICs • Current Sensing Diodes & Rectifiers • Bridge Rectifiers •Diacs •Rectifiers • Schottky Diodes & Rectifiers • Small Signal Diodes • Transient Voltage Suppressors (TVS) • Zener Diodes Ground Fault Interrupt (GFI) Controllers • Ground Fault Interrupt (GFI) Controllers IGBTs • Discrete IGBTs MOSFET and IGBT Gate Drivers • All Drivers • 3-Phase Drivers • Half-Bridge Drivers • High-Side Drivers • Low-Side Drivers • Synchronous Rectifier Drivers MOSFETs • Discrete MOSFETs • Integrated Load Switches • MOSFET/Schottky Combos Motion Control • BLDC/PMSM Controller •SPM® (Smart Power Modules) • PFC SPM® (Smart Power Modules) Non-Isolated DC-DC • Charge-pump Converters • DrMOS FET plus Driver Multi-Chip Modules • Step-down Controllers (External Switch) • Step-down Regulators, Non-Synchronous (Integrated Switch) • Step-down Regulators, Synchronous (Integrated Switch) • Step-up Regulators (Integrated Switch) APPLICATIONS DESIGN SUPPORT Off-Line & Isolated DC-DC • AC-DC Linear Regulators • Flyback & Forward PWM Controllers • Flyback & Forward PWM Controllers with Integrated MOSFET • LLC Resonant & Asymmetric Half Bridge PWM Controllers • LLC Resonant & Asymmetric Half Bridge PWM Controllers with Integrated MOSFETs • Primary-Side Regulation CV/CC Controllers • Primary-Side Regulation CV/CC Controllers with Integrated MOSFET • Standard PWM Controllers • Supervisory/Monitor ICs Power Factor Correction • Continuous Conduction Mode (CCM) PFC Controllers • Critical/Boundary Conduction Mode (CrCM/BCM) PFC Controllers • Interleaved PFC Controllers • PFC + PWM Combination (Combo) Controllers Transistors •BJTs •Darlingtons • Digital/Bias-Resistor Transistors •JFETs • RF Transistors • Small Signal Transistors Voltage Regulators •LDOs • Positive Voltage Linear Regulators • Negative Voltage Linear Regulators • Shunt Regulators • Voltage Detector • Voltage Stabilizer • Voltage to Frequency Converter ANALOG & MIXED SIGNAL Amplifiers & Comparators • Comparators • Operational Amplifiers Audio Amplifiers • Audio Subsystems • Audio Headphone Amplifiers • Audio Speaker Amplifiers • Digital Microphone Amplifiers Battery Protection ICs • Battery Protection ICs ABOUT FAIRCHILD Interface • LVDS • Serializers/Deserializers (µSerDes™) • USB Transceivers Signal Conditioning • Video Filter Drivers • Video Switch Matrix/Multiplexers Signaling, Sensing & Timing • Signaling, Sensing & Timing • Timing Switches • Accessory Switches • Analog Switches • Audio Jack Detection Switches • Audio Switches • Bus Switches • MIPI Switches • Multi-media Switches • USB Switches • Video Switches Logic Buffers, Drivers, Transceivers • Buffers • Line Drivers • Transceivers Flip Flops, Latches, Registers • Counters • Flip Flops • Inverters • Latches • Registers Gates • AND Gates • Configurable Gates • NAND Gates • NOR Gates • OR Gates • Schmitt Triggers Multiplexer/Demultiplexer/ Decoders • Decoders • Demultiplexers • Multiplexers • Multivibrators Voltage Level Translators • Voltage Level Translators LIGHTING ICs • Fluorescent Lamp ICs • HID ICs • LED Lighting ICs • Portable LED Drivers Trademarks, service marks, and registered trademarks are the property of Fairchild Semiconductor or their respective owners. For a listing of Fairchild Semiconductor trademarks and related information, please see: www.fairchildsemi.com/legal Lit. No. 100048-002 © 2012 Fairchild Semiconductor. All Rights Reserved. Optoelectronics High Performance Optocouplers • High Speed Logic Gate • High Performance Transistor • Low Voltage, High Performance • Specific Function IGBT/MOSFET Gate Drivers • IGBT/MOSFET Gate Drivers Infrared • Ambient Light Sensors • Emitting Diodes • Optical Interrupt Switches • Photo Sensors • Photo Sensor – Transistors • Reflective Sensors Phototransistor Optocouplers • Isolated Error Amplifier • Photo Darlington Output • Phototransistor Output DC Sensing Input • Phototransistor Output AC Sensing Input TRIAC Driver Optocouplers • Random Phase TRIAC Driver • Zero Crossing TRIAC Driver AUTOMOTIVE PRODUCTS Automotive Discrete Power • Automotive Ignition IGBTs • Automotive IGBTs • Automotive N-Channel MOSFETs • Automotive P-Channel MOSFETs • Automotive Rectifiers Automotive Gate Drivers • High Voltage Gate Drivers (HVICs) • Low Voltage Gate Drivers Automotive Smart Power Switches • Automotive Smart Power Switches CIRCUIT PROTECTION Reverse Polarity Protection • Blocking Diodes • Reverse Bias Protection Switches • Schottky diodes Transient Voltage Suppressors (TVS) • Mid Power TVS • Power TVS (> 400W)