Zener Linear Regulator with DC Inputs
Specify the Regulator Parameters
Vo
5 .volt
V in_min
Io
10 .volt
Specs for the Rev Polarity Diode
500 .mA
V in_max
V Dmax
1 .volt
V Dmin
0.5 .volt
20 .volt
Calculate the equivalent load resistance
Choose a Zener Diode
RL
V ZK
Vo
R L = 10 Ω
Io
5.1 .volt
Using the Thevenin equivalent voltage, find RS max. Note that Vth must be larger than Vzk
3 .Ω
RS
Given
V in_min
RS
V Dmax .
RL
RS
RL
V ZK
R S = 7.647 Ω
find R S
RS
1.05
= 7.283 Ω
Choose the next smallest standard 5% resistor.
R S_min
R S .0.95
R S_max
RS
R S .1.05
6.8 .Ω
R S_max = 7.14 Ω
Calculate the input Power with Vin at maximum - Assume No load at the output
I in_max
V in_max
V Dmin
Vo
RS
P in_max
V in_max .I in_max
P in_max = 42.647 watt
P R_max
I in_max2 .R S
P R_max = 30.919 mass .length2 .time 3 watt
P Z_max
V o .I in_max
P Z_max = 10.662 mass .length2 .time 3 watt
P D_max1
V Dmin .I in_max
P D_max1 = 1.066 watt
Calculate the diode dissipation assuming Vin max and VD min
P D_min1
V in_max
V Dmax .
V Dmax
Vo
RS
P D_min1 = 2.059 watt
Calculate the input Power with Vin at maximum - Assume No load at the output
I in_min
V in_min
V Dmin
Vo
RS
P in_min
V in_min .I in_min
P R_min
I in_min2 .R S
P R_min = 2.978 watt
P Z_min
V o .I in_min
P Z_min = 3.309 watt
P D_min2
V Dmin .I in_min
P D_min2 = 0.331 watt
Calculate the diode dissipation assuming Vin min and VD min
P D_max2
V Dmax .
V in_min
V Dmax
RS
Vo
P D_max2 = 0.588 watt
P in_min = 6.618 watt
Vin
Dbreak
D2
+
0
RS
+
Vo
6.8
Dz
D1
+
Vin
DC=10
-
PARAMETERS:
10
RL_val
R2
{RL_val}
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\Zener Lin Reg - DC INput.sch
Date/Time run: 09/26/100 10:08:47
(A) Zener Lin Reg - DC INput.dat
5.10V
Temperature: 27.0
Vin = 20 V
5.08V
5.06V
Vin = 10 V
5.04V
5.02V
5.00V
10
100
1.0K
10K
100K
1.0M
10M
V(Vo)
Date: September 26, 2000
RL_val
Page 1
Time: 10:13:39
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\Zener Lin Reg - DC INput.sch
Date/Time run: 09/26/100 10:08:47
(B) Zener Lin Reg - DC INput.dat
30
Temperature: 27.0
25
(2.786473679K,28.22518313)
20
15
10
5
(5.587953034K,2.425923366)
0
10
100
I(RS)* I(RS)*6.8
Date: September 26, 2000
1.0K
10K
RL_val
Page 2
100K
1.0M
10M
Time: 10:13:41
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\Zener Lin Reg - DC INput.sch
Date/Time run: 09/26/100 10:08:47
(C) Zener Lin Reg - DC INput.dat
12W
Temperature: 27.0
(410.20408163K,10.37045204)
10W
8W
6W
4W
(475.51020408K,3.021238921)
2W
0
0.2M
I(D2)* V(Vo)
Date: September 26, 2000
0.4M
0.6M
RL_val
Page 3
0.8M
1.0M
1.2M
Time: 10:13:42
Linear Voltage Regulator
Design
With BJT and Zener
Regulator designed for Constant DC Input
Specify the Regulator Parameters
Specs for the Rev Polarity Diode
Vo
5 .volt
V in_min
Io
10 .volt
0.5 .amp
V in_max
20 .volt
β
Specify β for the BJT at the maximum load
Io
IB
β
1 .volt
V Dmin
0.5 .volt
For a TIP 31 at 1 Amp
25
V BEmax
Calculate the base current
V Dmax
1
1.2 .volt
I B = 19.231 mA
Now design the zener/resistor circuit
Choose a Zener Diode
V ZK
Calculate the equivalent load resistance
RL
5.6 .volt
V ZK
IB
R L = 291.2 Ω
Using the Thevenin equivalent voltage, find RS max. Note that Vth must be larger than Vzk
RS
3 .Ω
Given
V in_min
RS
find R S
V Dmax .
RL
RS
RL
R S = 176.8 Ω
V ZK
RS
1.05
= 168.381 Ω
Choose the next smallest standard 5% resistor.
RS
150 .Ω
Calculate the power for the zenert
I z_max
V in_max
V Dmin
V ZK
I z_max = 0.093 amp
RS
P R_max
I z_max2 .R S
P R_max = 1.288 watt
P Z_max
V o .I z_max
P Z_max = 0.463 watt
Calculate the Total input current
I in_max
I z_max
Io
P in
I in_max .V in_max
Calculate the Max power for the BJT
P Q_max
I o.
β
β
1
. V
in_max
V Dmin
Vo
Io
β
P Q_max = 6.994 watt
Calculate the Mx power dissipated by the diode
P Dmax
V Dmax . I o
P Dmax = 0.589 watt
V in_max
V Dmax
RS
V ZK
.V
1
BEmax
P in = 11.853 watt
Vin
PARAMETERS:
10
RL_val
Dbreak
D2
+
RS
150
Vb
TIP31
+
0
R3
100k
+
-
D1
Dz2
+
Vin
DC=10
Vo
Q1
R2
{RL_val}
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\BJT-Zener Lin Reg - DC INput.sch
Date/Time run: 09/26/100 10:49:13
Temperature: 27.0
(D) BJT-Zener Lin Reg - DC INput.dat
5.51V
5.50V
5.49V
5.48V
5.47V
5.46V
10
100
1.0K
10K
100K
1.0M
10M
V(Vb)
Date: September 26, 2000
RL_val
Page 1
Time: 10:53:56
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\BJT-Zener Lin Reg - DC INput.sch
Date/Time run: 09/26/100 10:49:13
Temperature: 27.0
(E) BJT-Zener Lin Reg - DC INput.dat
5.1V
5.0V
4.9V
4.8V
4.7V
10
100
1.0K
10K
100K
1.0M
10M
V(Vo)
Date: September 26, 2000
RL_val
Page 2
Time: 10:53:57
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\BJT-Zener Lin Reg - DC INput.sch
Date/Time run: 09/26/100 10:49:13
Temperature: 27.0
(F) BJT-Zener Lin Reg - DC INput.dat
8.0W
6.0W
4.0W
2.0W
0W
10
100
1.0K
10K
IB(Q1)*(VB(Q1)-VE(Q1))+IC(Q1)*(VC(Q1)-VE(Q1))
RL_val
Date: September 26, 2000
Page 3
100K
1.0M
10M
Time: 10:53:58
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\BJT-Zener Lin Reg - DC INput.sch
Date/Time run: 09/26/100 10:49:13
Temperature: 27.0
(G) BJT-Zener Lin Reg - DC INput.dat
0W
-2W
-4W
-6W
-8W
-10W
-12W
10
100
I(Vin)* V(Vin)
Date: September 26, 2000
1.0K
10K
RL_val
Page 4
100K
1.0M
10M
Time: 10:53:59
Linear Voltage Regulator Design
With BJT and OPAMP
Regulator designed for Constant DC Input
Specify the Regulator Parameters
Specs for the Rev Polarity Diode
Vo
5 .volt
V in_min
Io
10 .volt
0.5 .amp
V in_max
20 .volt
β
Specify β for the BJT at the maximum load
V Dmax
1 .volt
V Dmin
0.5 .volt
For a TIP 31 at 1 Amp
25
V BEmax
Calculate the base current
IB
1.2 .volt
Io
β
1
I B = 19.231 mA
Use a 3904 for the darlington transistor
β2
HFE min at 10 mA was 100, HFE min at 50 mA wat 60.
80
Opamp output current
I opamp
IB
β2
1
I opamp = 237.417 µA
Specs and design of the Voltage Reference.
V ref
2.5 .volt
I rev
100 .µA
Choose the next smallest 5% resistor
I ref_max
V in_max
V ref
R ref
V Dmin
R ref
R ref
V in_min
56 kΩ
I ref_max = 0.304 mA
V ref
I rev
V Dmax
R ref = 65 kΩ
Calculate the Total input current
I in_max
Io
P in
I in_max .V in_max
Calculate the Max power for the BJT
P Q_max
I o.
β
β
1
. V
in_max
V Dmin
P Q_max = 6.994 watt
Calculate the Mx power dissipated by the diode
P Dmax
V Dmax .I o
P Dmax = 0.5 watt
Vo
Io
β
.V
1
BEmax
P in = 10 watt
Vin
PARAMETERS:
10
RL_val
Dbreak
D2
+
R6
56k
+
-
0
4
U1A
V+
1
LM324
V-
3 +
Vin
DC=10
+
2 -
Vref
DC=2.5
Q2 Q2N3904
Q1
TIP31
11
Vo
-
R4
50k
+
0
+
0
R2
{RL_val}
+
R5
50k
0
0
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\BJT-OPAMP Lin Reg - DC Input.sch
Date/Time run: 09/26/100 11:22:10
Temperature: 27.0
(H) BJT-OPAMP Lin Reg - DC Input.dat
5.002V
5.001V
5.000V
4.999V
4.998V
10
100
1.0K
10K
100K
1.0M
10M
V(Vo)
Date: September 26, 2000
RL_val
Page 1
Time: 11:25:03
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\BJT-OPAMP Lin Reg - DC Input.sch
Date/Time run: 09/26/100 11:22:10
Temperature: 27.0
(I) BJT-OPAMP Lin Reg - DC Input.dat
12W
10W
8W
6W
4W
2W
0W
10
100
V(Vin)* I(D2)
Date: September 26, 2000
1.0K
10K
RL_val
Page 2
100K
1.0M
10M
Time: 11:25:04
* D:\NAU\CLASS\egr456\SPICE_N\LIN_REG\BJT-OPAMP Lin Reg - DC Input.sch
Date/Time run: 09/26/100 11:22:10
Temperature: 27.0
(J) BJT-OPAMP Lin Reg - DC Input.dat
8.0W
6.0W
4.0W
2.0W
0W
10
100
1.0K
10K
IC(Q1)*(VC(Q1)-VE(Q1))+IB(Q1)*(VB(Q1)-VE(Q1))
RL_val
Date: September 26, 2000
Page 3
100K
1.0M
10M
Time: 11:25:05
Order this document
by TIP31A/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general purpose amplifier and switching applications.
• Collector–Emitter Saturation Voltage —
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — TIP31A, TIP32A
VCEO(sus) = 80 Vdc (Min) — TIP31B, TIP32B
VCEO(sus) = 100 Vdc (Min) — TIP31C, TIP32C
• High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO–220 AB Package
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*MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
TIP31A
TIP32A
TIP318
TIP32B
TIP31C
TIP32C
Unit
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
3.0
5.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
40
0.32
Watts
W/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
2.0
0.016
Watts
W/_C
E
32
mJ
TJ, Tstg
– 65 to + 150
_C
Max
Unit
Unclamped Inductive
Load Energy (1)
Operating and Storage Junction
Temperature Range
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 – 100 VOLTS
40 WATTS
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
Thermal Resistance, Junction to Case
RθJC
3.125
_C/W
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
3–1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
60
80
100
—
—
—
—
—
—
0.3
0.3
0.3
—
—
—
200
200
200
IEBO
—
1.0
mAdc
hFE
25
10
—
50
—
VCE(sat)
VBE(on)
—
1.2
Vdc
—
1.8
Vdc
fT
hfe
3.0
—
MHz
20
—
—
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
TIP31A, TIP32A
TIP31B, TIP31C
TIP32B, TIP32C
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
ICEO
Vdc
µAdc
ICES
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
PD, POWER DISSIPATION (WATTS)
TC
40
TA
4.0
30
3.0
20
2.0
10
1.0
0
0
2.0%.
TC
TA
0
20
40
60
100
80
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
TURN–ON PULSE
APPROX
+11 V
APPROX
+11 V
SCOPE
0.7
0.5
RB
t1
t3
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
t2
TURN–OFF PULSE
IC/IB = 10
TJ = 25°C
1.0
Vin
Vin
– 4.0 V
DUTY CYCLE ≈ 2.0%
APPROX – 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
Figure 2. Switching Time Equivalent Circuit
3–2
2.0
RC
t, TIME ( µs)
Vin 0
VEB(off)
VCC
0.3
tr @ VCC = 30 V
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
td @ VEB(off) = 2.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
Motorola Bipolar Power Transistor Device Data
3.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
ZθJC(t) = r(t) RθJC
RθJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
1.0
0.5
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
5.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
5.0 ms
2.0
1.0
0.5
0.2
0.1
5.0
SECONDARY BREAKDOWN
LIMITED @ TJ ≤ 150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
CURVES APPLY
TIP31B, TIP32B
BELOW RATED VCEO
TIP31C, TIP32C
1.0 ms
v
10
20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active Region Safe Operating Area
300
ts′
t, TIME ( µs)
1.0
0.7
0.5
0.3
0.2
tf @ VCC = 30 V
IB1 = IB2
IC/IB = 10
ts′ = ts – 1/8 tf
TJ = 25°C
TJ = + 25°C
200
CAPACITANCE (pF)
3.0
2.0
tf @ VCC = 10 V
0.1
0.07
0.05
0.03
0.03
100
Ceb
70
50
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
Motorola Bipolar Power Transistor Device Data
2.0
3.0
30
0.1
Ccb
0.2 0.3
10
0.5
1.0
2.0 3.0 5.0
VR, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 7. Capacitance
3–3
hFE, DC CURRENT GAIN
300
100
70
50
TJ = 150°C
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
VCE = 2.0 V
25°C
– 55°C
30
10
7.0
5.0
0.5 0.7 1.0
0.03 0.05 0.07 0.1
0.3
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
TJ = 25°C
1.6
0.4
0
1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT ( µA)
100
10–1
10–2
200
500 1000
+ 2.0
+ 1.5
*APPLIES FOR IC/IB ≤ hFE/2
TJ = – 65°C TO + 150°C
+ 1.0
*θVC FOR VCE(sat)
+ 0.5
0
– 0.5
– 1.0
θVB FOR VBE
– 1.5
– 2.0
– 2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
VCE = 30 V
TJ = 150°C
100°C
REVERSE
FORWARD
25°C
10–3
– 0.4 – 0.3 – 0.2 – 0.1
3–4
10
20
50
100
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMP)
103
101
5.0
IC, COLLECTOR CURRENT (AMPS)
ICES
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
R BE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
0.6
102
2.0
+ 2.5
TJ = 25°C
1.0
0.2
3.0 A
Figure 9. Collector Saturation Region
1.4
0.8
1.0 A
0.8
Figure 8. DC Current Gain
1.2
IC = 0.3 A
1.2
2.0 3.0
107
105
IC ≈ ICES
104
IC = 2 x ICES
103
102
20
VCE = 30 V
IC = 10 x ICES
106
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40
60
80
100
120
140
160
VBE, BASE–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
3–5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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How to reach us:
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P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
3–6
◊
Motorola Bipolar Power Transistor Device Data
*TIP31A/D*
TIP31A/D
Order this document by LM285/D
The LM285/LM385 series are micropower two–terminal bandgap voltage
regulator diodes. Designed to operate over a wide current range of 10 µA to
20 mA, these devices feature exceptionally low dynamic impedance, low
noise and stable operation over time and temperature. Tight voltage
tolerances are achieved by on–chip trimming. The large dynamic operating
range enables these devices to be used in applications with widely varying
supplies with excellent regulation. Extremely low operating current make
these devices ideal for micropower circuitry like portable instrumentation,
regulators and other analog circuitry where extended battery life is required.
The LM285/LM385 series are packaged in a low cost TO–226AA plastic
case and are available in two voltage versions of 1.235 and 2.500 V as
denoted by the device suffix (see Ordering Information table). The LM285 is
specified over a –40°C to +85°C temperature range while the LM385 is rated
from 0°C to +70°C.
The LM385 is also available in a surface mount plastic package in
voltages of 1.235 and 2.500 V.
• Operating Current from 10 µA to 20 mA
•
•
•
•
1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades
MICROPOWER VOLTAGE
REFERENCE DIODES
SEMICONDUCTOR
TECHNICAL DATA
Z SUFFIX
PLASTIC PACKAGE
CASE 29
(Bottom View)
3
2
1
N.C.
Cathode
Anode
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8) N.C. 1
Low Temperature Coefficient
1.0 Ω Dynamic Impedance
8 Cathode
N.C. 2
7 N.C.
N.C. 3
6 N.C.
Anode 4
5 N.C.
Surface Mount Package Available
Standard Application
+
1.5 V
Battery
3.3 k
–
1.235 V
Representative Schematic Diagram
LM385–1.2
Cathode
10 k
360 k
Open
for 1.235 V
600 k
ORDERING INFORMATION
Device
8.45 k
LM285D–1.2
LM285Z–1.2
LM285D–2.5
LM285Z–2.5
74.3 k
Open
for 2.5 V
600 k
Reverse
Break–
Operating
Temperature down
Voltage Tolerance
Range
TA = – 40° to
+85°C
LM385BD–1.2
LM385BZ–1.2
425 k
LM385D–1.2
LM385Z–1.2
500 Ω
600 k
100 k
LM385BD–2.5
LM385BZ–2.5
LM385D–2.5
LM385Z–2.5
TA = 0° to
+70°C
1.235 V
± 1.0%
2.500 V
± 1.5%
1.235 V
± 1.0%
1.235 V
± 2.0%
2.500 V
± 1.5%
2.500 V
± 3.0%
Anode
 Motorola, Inc. 1996
MOTOROLA ANALOG IC DEVICE DATA
Rev 2
1
LM285 LM385, B
MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Current
IR
30
mA
Forward Current
IF
10
mA
Operating Ambient Temperature Range
LM285
LM385
TA
Operating Junction Temperature
Storage Temperature Range
°C
– 40 to + 85
0 to +70
TJ
+ 150
°C
Tstg
– 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
LM285–1.2
Characteristic
Reverse Breakdown Voltage (IRmin
LM285–1.2/LM385B–1.2
TA = Tlow to Thigh (Note 1)
LM385–1.2
TA = Tlow to Thigh (Note 1)
p IR p 20 mA)
Minimum Operating Current
TA = 25°C
TA = Tlow to Thigh (Note 1)
Reverse Breakdown Voltage Change with Current
IRmin
IR
1.0 mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
1.0 mA
IR
20 mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
p p
p p
Reverse Dynamic Impedance
IR = 100 µA, TA = +25°C
Symbol
LM385–1.2/LM385B–1.2
Min
Typ
Max
Min
Typ
Max
1.223
1.200
–
–
1.235
–
–
–
1.247
1.270
–
–
1.223
1.210
1.205
1.192
1.235
–
1.235
–
1.247
1.260
1.260
1.273
–
–
8.0
–
10
20
–
–
8.0
–
15
20
–
–
–
–
–
–
–
–
1.0
1.5
10
20
–
–
–
–
–
–
–
–
1.0
1.5
20
25
0.6
–
–
0.6
–
W
V(BR)R
Unit
V
µA
IRmin
∆V(BR)R
mV
Z
∆V(BR)/∆T
–
80
–
–
80
–
ppm/°C
Wideband Noise (RMS)
IR = 100 µA, 10 Hz
f
n
–
60
–
–
60
–
µV
Long Term Stability
IR = 100 µA, TA = +25°C ± 0.1°C
S
–
20
–
–
20
–
ppm/
kHR
Average Temperature Coefficient
10 µA
IR
20 mA, TA = Tlow to Thigh (Note 1)
p p
p p 10 kHz
2
MOTOROLA ANALOG IC DEVICE DATA
LM285 LM385, B
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
LM285–2.5
Characteristic
Reverse Breakdown Voltage (IRmin
LM285–2.5/LM385B–2.5
TA = Tlow to Thigh (Note 1)
LM385–2.5
TA = Tlow to Thigh (Note 1)
p IR p 20 mA)
Minimum Operating Current
TA = 25°C
TA = Tlow to Thigh (Note 1)
Reverse Breakdown Voltage Change with Current
IRmin
IR
1.0 mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
1.0 mA
IR
20 mA, TA = +25°C
TA = Tlow to Thigh (Note 1)
p p
p p
Reverse Dynamic Impedance
IR = 100 µA, TA = +25°C
Symbol
LM385–2.5/LM385B–2.5
Min
Typ
Max
Min
Typ
Max
2.462
2.415
–
–
2.5
–
–
–
2.538
2.585
–
–
2.462
2.436
2.425
2.400
2.5
–
2.5
–
2.538
2.564
2.575
2.600
–
–
13
–
20
30
–
–
13
–
20
30
–
–
–
–
–
–
–
–
1.0
1.5
10
20
–
–
–
–
–
–
–
–
2.0
2.5
20
25
0.6
–
–
0.6
–
W
V(BR)R
Unit
V
µA
IRmin
∆V(BR)R
mV
Z
∆V(BR)/∆T
–
80
–
–
80
–
ppm/°C
Wideband Noise (RMS)
IR = 100 µA, 10 Hz
f
n
–
120
–
–
120
–
µV
Long Term Stability
IR = 100 µA, TA = +25°C ± 0.1°C
S
–
20
–
–
20
–
ppm/
kHR
Average Temperature Coefficient
20 µA
IR
20 mA, TA = Tlow to Thigh (Note 1)
p p
p p 10 kHz
NOTES: 1. Tlow = – 40°C for LM285–1.2, LM285–2.5
= 0°C for LM385–1.2, LM385B–1.2, LM385–2.5, LM385B–2.5
MOTOROLA ANALOG IC DEVICE DATA
Thigh = +85°C for LM285–1.2, LM285–2.5
Thigh = +70°C for LM385–1.2, LM385B–1.2, LM385–2.5, LM385B–2.5
3
LM285 LM385, B
TYPICAL PERFORMANCE CURVES FOR LM285–1.2/385–1.2/385B–1.2
Figure 2. Reverse Characteristics
IR, REVERSE CURRENT ( µ A)
10
TA = + 85°C
1.0
+ 25°C
0.1
0
0.2
– 40°C
0.4
0.6
0.8
1.0
V(BR), REVERSE VOLTAGE (V)
1.2
1.4
∆V(BR)R, REVERSE VOLTAGE CHANGE (mV)
Figure 1. Reverse Characteristics
100
10
8.0
TA = + 85°C
6.0
+ 25°C
4.0
– 40°C
2.0
0
–2.0
0.01
0.1
Figure 3. Forward Characteristics
1.0
10
IR, REVERSE CURRENT (mA)
100
Figure 4. Temperature Drift
1.2
V(BR)R, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
1.250
1.0
TA = – 40°C
0.8
0.6
+ 25°C
+ 85°C
0.4
0.2
0
0.01
1.230
1.220
1.210
0.1
1.0
10
IF , FORWARD CURRENT (mA)
IR = 100 µA
1.240
100
–50
–25
0
25
50
75
TA , AMBIENT TEMPERATURE (°C)
Figure 5. Noise Voltage
1.50
1.25
OUTPUT (V)
√Hz)
750
e n , NOISE (nV/
125
Figure 6. Response Time
875
625
500
Input
100 k
1.00
0.75
Output
0.50
DUT
0.25
375
0
INPUT (V)
250
125
0
4
100
10
100
1.0 K
f, FREQUENCY (Hz)
10 K
100 k
10
5.0
0
0
0.1
0.2
0.3
0.6 0.7
t, TIME (ms)
0.8
0.9
1.0
1.1
MOTOROLA ANALOG IC DEVICE DATA
LM285 LM385, B
TYPICAL PERFORMANCE CURVES FOR LM285–2.5/385–2.5/385B–2.5
Figure 8. Reverse Characteristics
IR, REVERSE CURRENT ( µ A)
10
TA = + 85°C
+ 25°C
1.0
– 40°C
0.1
0
0.5
1.0
1.5
2.0
2.5
V(BR), REVERSE VOLTAGE (V)
3.0
3.5
∆V(BR)R, REVERSE VOLTAGE CHANGE (mV)
Figure 7. Reverse Characteristics
100
10
TA = + 85°C
8.0
6.0
+ 25°C
2.0
0
–2.0
0.01
0.1
Figure 9. Forward Characteristics
V(BR)R, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
1.0
TA = – 40°C
0.8
0.6
0.2
0
0.01
+ 85°C
+ 25°C
2.520
2.500
2.490
2.480
2.470
2.460
100
–50
–25
0
25
50
75
TA , AMBIENT TEMPERATURE (°C)
Figure 11. Noise Voltage
100
125
Figure 12. Response Time
3.00
2.50
√Hz)
OUTPUT (V)
1500
1250
e n , NOISE (nV/
100
IR = 100 µA
2.510
2.450
0.1
1.0
10
IF , FORWARD CURRENT (mA)
1.0
10
IR, REVERSE CURRENT (mA)
Figure 10. Temperature Drift
1.2
0.4
– 40°C
4.0
1000
Input
100 k
2.00
1.50
Output
1.00
DUT
0.50
750
0
INPUT (V)
500
250
0
10
100
1.0 K
f, FREQUENCY (Hz)
10 K
MOTOROLA ANALOG IC DEVICE DATA
100 k
10
5.0
0
0
0.1
0.2
0.3
0.6 0.7
t, TIME (ms)
0.8
0.9
1.0
1.1
5
LM285 LM385, B
OUTLINE DIMENSIONS
Z SUFFIX
PLASTIC PACKAGE
CASE 29–04
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
ISSUE N
–A–
8
1
4X
P
0.25 (0.010)
4
M
B
M
G
R
C
–T–
8X
D
0.25 (0.010)
6
K
M
T B
SEATING
PLANE
S
A
M_
S
X 45 _
F
J
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
5
–B–
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.18
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.189
0.196
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.007
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MOTOROLA ANALOG IC DEVICE DATA
LM285 LM385, B
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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MOTOROLA ANALOG IC DEVICE
DATA
◊
LM285/D7
*LM285/D*
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
N
Discrete Power & Signal
Technologies
2N3904
MMBT3904
C
E
C
B
TO-92
SOT-23
E
B
Mark: 1A
MMPQ3904
E
B
E
B
E
B
SOIC-16
E
PZT3904
B
C
C
C
C
C
C
C
C
C
E
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
I C = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
I C = 10 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I E = 10 µA, I C = 0
6.0
V
IBL
Base Cutoff Current
VCE = 30 V, VEB = 0
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VEB = 0
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
40
70
100
60
30
0.65
300
0.2
0.3
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure (except MMPQ3904)
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz
300
MHz
4.0
pF
8.0
pF
5.0
dB
35
ns
SWITCHING CHARACTERISTICS (except MMPQ3904)
td
Delay Time
VCC = 3.0 V, VBE = 0.5 V,
tr
Rise Time
I C = 10 mA, IB1 = 1.0 mA
35
ns
ts
Storage Time
VCC = 3.0 V, IC = 10mA
200
ns
tf
Fall Time
I B1 = IB2 = 1.0 mA
50
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
PD
Max
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Symbol
*PZT3904
1,000
8.0
200
125
mW
mW/°C
°C/W
°C/W
Max
**MMBT3904
350
2.8
357
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
RθJA
Units
2N3904
625
5.0
83.3
Characteristic
PD
Units
MMPQ3904
1,000
8.0
mW
mW/°C
°C/W
°C/W
°C/W
125
240
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
500
V CE = 5V
400
125 °C
300
25 °C
200
- 40º C
100
0
0.1
IC
1
10
- COLLECTOR CURRENT (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
β = 10
- 40 °C
25 °C
0.6
125 °C
0.4
0.1
1
10
I C - COLLECTOR CURRENT (mA)
P 23
100
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
VBESAT- BASE-EMITTER VOLTAGE (V)
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
Collector-Emitter Saturation
Voltage vs Collector Current
β = 10
0.15
125 °C
0.1
25 °C
0.05
- 40 °C
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
(continued)
Typical Characteristics
(continued)
POWER DISSIPATION vs
AMBIENT TEMPERATURE
ICBO- COLLECTOR CURRENT (nA)
Collector-Cutoff Current
vs Ambient Temperature
1
P D - POWER DISSIPATION (W)
500
VCB = 30V
100
10
1
0.1
25
50
75
100
125
TA - AMBIENT TEMPERATURE ( °C)
150
0.75
SOT-223
0.5
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
Test Circuits
3.0 V
275 Ω
300 ns
10.6 V
Duty Cycle = 2%
Ω
10 KΩ
0
- 0.5 V
C1 < 4.0 pF
< 1.0 ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
10 < t1 < 500 µs
t1
10.9 V
275 Ω
Duty Cycle = 2%
10 KΩ
Ω
0
C1 < 4.0 pF
1N916
- 9.1 V
< 1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
125
150
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier