TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Applications
•
•
•
•
Small Cell Base Station
Microcell Base Station Driver
Active Antenna
General Purpose Applications
16 Pin 3x3mm QFN
N/C
N/C
N/C
Operating Frequency Range: DC to 4 GHz
Output Power (PSAT): 5 W
Drain Efficiency: 68%
Linear Gain: 19 dB
Package Dimensions: 3 x 3 x 0.85 mm
16
15
14
13
12
N/C
VG, RF In
2
11
VD, RF Out
N/C
3
10
VD, RF Out
N/C
4
9
N/C
N/C
5
General Description
6
7
8
N/C
1
N/C
N/C
N/C
•
•
•
•
•
Functional Block Diagram
N/C
Product Features
Pin Configuration
The TQP0102 is a wide band over-molded QFN discrete
GaN power amplifier. The device is a single stage
unmatched power amplifier transistor.
Pin No.
Label
1, 3-9, 12-16
N/C
2
RF IN, VG
The TQP0102 can be used in Doherty architecture for the
final stage of a base station power amplifier for small cell
applications. The TQP0102 can also be used in microcell
and active antenna applications.
10-11
RF OUT, VD
Backside Paddle
RF/DC GND
The wide bandwidth of the TQP0102 makes it suitable for
many different applications from DC to 4 GHz. TQP0102
can deliver PSAT of 5 W at 28 to 32 V operation.
Lead-free and ROHS compliant.
Ordering Information
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
Part No.
ECCN Description
TQP0102
TQP0102-PCB
EAR99
EAR99
- 1 of 10 -
5 W, DC to 4 GHz, GaN PA
2.5-2.7 GHz Evaluation Board
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TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Parameter
Min
Operating Temperature
Gate Voltage (VG)
Drain Voltage (VD)
Quiescent Current (ICQ)
TCH for >106 hours MTTF
−40
Rating
Gate Voltage (VG)
−6 V
Drain Voltage (VD)
+40 V
Peak RF Input Power
29 dBm
VSWR Mismatch, P1dB Pulse (20%
10:1
duty cycle, 100 µs width), T = 25°C
Storage Temperature
−65 to +150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Typ
Max Units
+105
−2.9
32
25
225
°C
V
V
mA
°C
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VG = −2.67 V, VD = 32 V, ICQ = 25 mA, T = 25°C, 2.6 GHz single-ended application circuit
Parameter
Frequency Range
Quiescent Current
Linear Gain
P3dB
Drain Efficiency
Input Return Loss
Conditions
Min
POUT = 25 dBm, Pulsed (10% duty cycle, 100 µs width)
Pulsed (10% duty cycle, 100 µs width)
P3dB
Measured in EVB
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
- 2 of 10 -
DC
20
17
36.5
60
Typ
25
19
37
65
10
Max
Units
4000
30
MHz
mA
dB
dBm
%
dB
Disclaimer: Subject to change without notice
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TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Thermal Information
Parameter
Conditions
Thermal Resistance at
Average Power (θJC)
Thermal Resistance at
Saturated Power (θJC)
TC = 85°C, TCH = 114.1°C,
CW: PDISS = 1.59 W, POUT = 0.35 W
TC = 85°C, TCH = 135.1°C,
CW: PDISS = 2.65 W, POUT = 5.59 W
Value
Units
18.3
°C/W
18.9
°C/W
Notes:
1. Thermal resistance measured to package backside.
Median Lifetime (Hours)
Median Lifetime
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature (°C)
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
- 3 of 10 -
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TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Evaluation Board Layout
Bill of Materials
Reference Des.
Value
Description
C1, C4, C5, C6, C7
C2, C3
C8
C9
C10
R1
R2
R3
R8
R3, R4
R5, R6
R7
22 pF
0.7 pF
10 µF
1 µF
220 µF
2.5 Ω
75 Ω
10 Ω
1 kΩ
10 Ω
Capacitor, 0603
Capacitor, 0.5 pF, 0603
Capacitor, 6.3 V, 0612
Capacitor, 1812
Capacitor, 10x10 mm, 50 V
Resistor, 2.5 Ω, 0603
Resistor, 75 Ω, 0805
Resistor, 1/10 W 1% 0603
Resistor, 0805
Resistor, 1/10 W 1% 0603
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
Manuf.
- 4 of 10 -
Part Number
ATC
ATC
TDK
AVX
United Chem Con
Venkel
Venkel
Venkel
Venkel
Venkel
DNP
DNP
600S220BT250XT
600S005BT250XT
C1632X5R0J106M130AC
18121C105KAT2A
EMVY500ADA221MJA0G
CR0603
CR0805
ERJ-3EKF10R0V
RES 1k OHM 0805
ERJ-3EKF10R0V
Disclaimer: Subject to change without notice
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TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Performance Plots
Test conditions unless otherwise noted: VD = 32 V, ICQ = 25 mA, T = 25°C, 2.6 GHz single-ended application circuit
Gain vs. Output Power
22
21
70
19
2500 MHz
2600 MHz
17
2700 MHz
16
VG = −2.67 V, VD = 32 V, ICQ = 25 mA
Pulse CW: Duty Cycle = 20%, Pulse Period = 500 µs
60
Drain Efficiency (%)
Gain (dB)
20
18
Drain Efficiency vs. Output Power
80
VG = −2.67 V, VD = 32 V, ICQ = 25 mA
Pulse CW: Duty Cycle = 20%, Pulse Period = 500 µs
2500 MHz
2600 MHz
50
2700 MHz
40
30
20
15
10
Temp. = +25°C
Temp. = +25°C
14
0
18
20
22
24
26
28
30
32
34
36
38
18
20
22
24
Output Power (dBm)
VG = −2.63 V, VD = 32 V, ICQ = 25 mA
WCDMA, PAR = 8 dB @ 0.01% CCDF
21
VG = −2.63 V, VD = 32 V, ICQ = 25 mA
WCDMA, PAR = 8 dB @ 0.01% CCDF
70
32
34
19
18
17
2500 MHz
2600 MHz
50
40
30
20
15
10
14
0
26
27
28
29
30
2500 MHz
31
32
33
2600 MHz
2700 MHz
25
26
Average Output Power (dBm)
Peak Power vs. Average Output Power
VG = −2.63 V, VD = 32 V, ICQ = 25 mA
WCDMA, PAR = 8 dB @ 0.01% CCDF
27
28
29
30
31
32
33
Average Output Power (dBm)
-20
Temp. = +25°C
-22
38
ACPR vs. Average Output Power
VG = −2.63 V, VD = 32 V, ICQ = 25 mA
WCDMA, PAR = 8 dB @ 0.01% CCDF
Temp. = +25°C
-24
37
-26
ACPR (dBc)
Peak Power at 0.01% CCDF (dB)
39
38
Temp. = +25°C
2700 MHz
25
36
60
Drain Efficiency (%)
Gain (dB)
30
Drain Efficiency vs. Average Output Power
80
Temp. = +25°C
20
16
28
Output Power (dBm)
Gain vs. Average Output Power
22
26
36
35
34
33
-28
-30
-32
2500 MHz
-34
2600 MHz
-36
2500 MHz
2600 MHz
2700 MHz
2700 MHz
-38
32
-40
25
26
27
28
29
30
31
32
33
25
Average Output Power (dBm)
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
26
27
28
29
30
31
32
33
Average Output Power (dBm)
- 5 of 10 -
Disclaimer: Subject to change without notice
www.triquint.com
TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Performance Plots
Test conditions unless otherwise noted: VD = 32 V, ICQ = 25 mA, T = 25°C, 2.6 GHz single-ended application circuit
Small Signal Gain vs. Frequency
30
Return Loss vs. Frequency
0
Temp. = +25°C
25
-5
20
S11, S22 (dB)
S21 (dB)
15
10
5
0
-10
IRL
-15
ORL
-20
-5
-10
-25
-15
-20
Temp. = +25°C
-30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency (GHz)
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency (GHz)
- 6 of 10 -
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TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Load Pull Plots
Test conditions unless otherwise noted: VD = 32 V, ICQ = 25 mA, T = 25°C, Pulse CW (duty cycle = 20%, pulse period = 500 µs)
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
- 7 of 10 -
Disclaimer: Subject to change without notice
www.triquint.com
TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
N/C
N/C
N/C
N/C
Pin Configuration and Description
16
15
14
13
N/C
VG, RF In
2
11
VD, RF Out
N/C
3
10
VD, RF Out
N/C
4
9
N/C
6
7
8
N/C
5
N/C
12
N/C
1
N/C
N/C
Pin No.
Label
Description
1, 3, 4, 5, 6, 7, 8, 9, 12, 13, 14, 15, 16
2
10, 11
Backside Paddle
N/C
RF IN, VG
RF OUT, VD
RF/DC GND
No Connection
RF Input, Gate Bias
RF Output, Drain Bias
RF/DC Ground
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
- 8 of 10 -
Disclaimer: Subject to change without notice
www.triquint.com
TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Package Marking and Dimensions
Marking: Part ID – 0102
Year/Workweek – YYWW
“M” + Lot Number – MZZZ
0102
YYWW
MZZZ
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
- 9 of 10 -
Disclaimer: Subject to change without notice
www.triquint.com
TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with both lead-free (260°C maximum reflow
temperature) and tin/lead (245°C maximum reflow
temperature) soldering processes.
Caution! ESD-Sensitive Device
Contact plating: NiPdAu
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes ≥ 250 V
Human Body Model (HBM)
JEDEC Standard JS-001-2012
ESD Rating:
Value:
Test:
Standard:
Class C3
Passes ≥ 1000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101F
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
MSL Rating
MSL Rating: Level 3
Test:
260°C convection reflow
Standard:
JEDEC Standard IPC/JEDEC J-STD-020D.1
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
ECCN
US Department of Commerce EAR99
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: btsapplications@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for TriQuint products. The information contained herein
or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
- 10 of 10 -
Disclaimer: Subject to change without notice
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