gRSC0012
Complete Receiver
71 - 76 GHz
Rev.A03-13
The gRSC0012 is a highly complete integrated receiver for E-band radio applications. It includes a high gain, low noise amplifier, a x6 frequency multiplier, an II_QQ_-mixer having low losses and high linearity followed by a buffer amplifier at the output.
E-band point-to-point radio
Active imaging
General purpose
Performance, Ta = 25 C
Parameter
Conversion gain
Typical
20 dB
RF
IF
71 – 76 GHz
DC – 12 GHz
Image reject
OIP3
OIP2
Noise figure
DC power
20 dB
20 dBm
45 dBm
6 dB
1000 mW
For more information, prices or to place orders please contact sales@gotmic.se
Data and specification are subject to change without notice © 2014 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 18 40 30 http://www.gotmic.se/

gRSC0012
Complete Receiver
71 - 76 GHz
Rev.A03-13
All tests using LO = + 7 dBm
30
30
A1
A2
A3
20
20
10
10
A1
A2
A3
0
70 75 80
LO freq [GHz]
85 90
Fig 1. Conversion gain and OIP3
60
50
A1
A2
A3
0
70 75 80
LO freq [GHz]
85
Fig. 2 OIP3
40
A1
A2
A3
90
30
40
20
30
20
70 75 80
LO freq [GHz]
85 90
10
70 75 80
LO freq [GHz]
85
Fig 3. OIP2
10
8
6
4
2
0
65 70 75 80
RF freq [GHz]
B1
Fig. 4 IRR
85 90
Fig 5. NF
For more information, prices or to place orders please contact sales@gotmic.se
Data and specification are subject to change without notice © 2014 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 18 40 30 http://www.gotmic.se/
90

gRSC0012
Complete Receiver
71 - 76 GHz
Rev.A03-13
Connector P1
LO in
Connector P2
(From left to right)
Vg_x3
Vg_x2
Vd_x
GND
Vg_amp
Vd_amp
Vg_mix
Connector P5
(From up down)
GND
I data out
I_data out
GND
Q data out
Q_data out
GND
Connector P3
RF in
Bias voltage (bias current) & settings
+ 7 dBm
Bias sequence
2
Bias voltage (bias current) & settings
- 0.35 V
-0.75 V
+3.3 V
-0.25V
+3.3 V
- 0.7 V
Preferred bias sequence
1
1
2
1
1
2
1
Bias voltage (bias current) & settings
100 ohm differential impedance
100 ohm differential impedance
100 ohm differential impedance
100 ohm differential impedance
Bias sequence
1
2
2
1
1
2
2
Bias voltage (bias current) & settings Bias sequence
2
For more information, prices or to place orders please contact sales@gotmic.se
Data and specification are subject to change without notice © 2014 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 18 40 30 http://www.gotmic.se/

gRSC0012
Complete Receiver
71 - 76 GHz
Rev.A03-13
Connector P4
(From left to right)
Bias voltage (bias current)& settings Bias sequence
VD3
VSS
VD2
+5.0 V (125 mA) 1
-1.5 V (120 mA) 1
+2.0 V
2
2
2
GND
VG2
VD1
-
-0.25 V
+ 2 V
1
1
2
VG1 -0.4 V 1
1 Difference current between VD3 and VSS should be around 5 mA. Nominal current is
125 mA ± 10 mA. In order to achieve 5 mA difference between VSS and VDD, VSS needs to be slightly adjusted.
Gate bias voltage
IF out (I/I_/Q/Q_)
LO drive
Operating temperature
Storage temperature
-5 to + 0.7 V
+ 7 dBm/ch.
+ 15 dBm
-40 to + 85 C
-65 to +150 C
For more information, prices or to place orders please contact sales@gotmic.se
Data and specification are subject to change without notice © 2014 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 18 40 30 http://www.gotmic.se/

gRSC0012
Complete Receiver
71 - 76 GHz
Rev.A03-13
Distances are in µm [mil]. Drawing is also available in dwg format upon request.
RF probe pitch from 75 to 150 um.
DC probe pitch 150 µm. Substrate thickness is 50 µm (GaAs).
Note: dxf file available on request
For more information, prices or to place orders please contact sales@gotmic.se
Data and specification are subject to change without notice © 2014 Gotmic AB
Gotmic AB, Arvid Hedvalls Backe 4, S-411 33 Göteborg, Sweden. Tel: +46 (0) 31 18 40 30 http://www.gotmic.se/