Representations of bits AND and OR gates using switches

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Representations of bits
Ta bl e 3 - 1 Physical states representing bits in different computer logic and
memory technologies.
State Representing Bit
Technology
0
1
Pneumatic logic
Fluid at low pressure
Fluid at high pressure
Relay logic
Circuit open
Circuit closed
Complementary metal-oxide
semiconductor (CMOS) logic
0–1.5 V
3.5–5.0 V
Transistor-transistor logic (TTL)
0–0.8 V
2.0–5.0 V
Fiber optics
Light off
Light on
Dynamic memory
Capacitor discharged
Capacitor charged
Nonvolatile, erasable memory
Electrons trapped
Electrons released
Bipolar read-only memory
Fuse blown
Fuse intact
Bubble memory
No magnetic bubble
Bubble present
Magnetic tape or disk
Flux direction “north”
Flux direction “south”
Polymer memory
Molecule in state A
Molecule in state B
Read-only compact disc
No pit
Pit
Rewriteable compact disc
Dye in crystalline state
Dye in noncrystalline state
Not all logic representations are suitable for logic gates.
Logic device must outputs that are of the same type as its inputs.
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 1
AND and OR gates using switches
Single-pole single-throw (SPST) switches are either normally open (n.o.) or
normally closed (n.c.).
Normally-open switches can be used to build AND and OR gates.
AND gate: serial connection:
V
+
−
LED
A
October 3, 2002
B
OR gate: parallel connection:
V
+
−
LED
A
EE 121: Digital Design Laboratory
B
Lecture 3 – 2
MOS transistors
Logic levels for CMOS circuits have wide range, from > 12 V down to ∼ 1 V.
Often 5 V is used for compatibility with older logic families (TTL).
5.0 V
Logic 1 (HIGH)
3.5 V
undefined
logic level
1.5 V
Logic 0 (LOW)
0.0 V
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
MOS transistors are voltage-controlled resistances that we use as switches.
VIN
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
n-type transistors are normally open; p-type transistors are normally closed.
+
source
Vgs
−
Voltage-controlled resistance:
increase Vgs ==> decrease Rds
drain
gate
Vgs
+
source
gate
drain
Note: normally, Vgs ≥0
−
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
October 3, 2002
Voltage-controlled resistance:
decrease Vgs ==> decrease Rds
Note: normally, Vgs ≤0
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
EE 121: Digital Design Laboratory
Lecture 3 – 3
CMOS inverter
Schematic, function table, and logic symbol:
VDD = +5.0 V
(a)
VDD = +5.0 V
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
(b)
VIN
Q1
Q2
VOUT
0.0 (L)
5.0 (H)
off
on
on
off
5.0 (H)
0.0 (L)
Q2
on when
VIN is low
(p-channel)
Q2
(p-channel)
VOUT
VIN
Q1
VIN
VOUT
Q1
(n-channel)
on when
VIN is high
(n-channel)
(c)
IN
OUT
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
Switch view of CMOS inverter:
(a)
VIN = L
VDD = +5.0 V
(b)
VOUT = H
VDD = +5.0 V
VIN = H
VOUT = L
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 4
CMOS NAND
Schematic, function table, and logic symbol:
VDD
(a)
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
(b)
Q2
Q4
Z
A
Q1
B
Q3
(c)
A B
Q1
Q2
Q3
Q4
Z
L
L
H
H
off
off
on
on
on
on
off
off
off
on
off
on
on
off
on
off
H
H
H
L
L
H
L
H
A
Z
B
Switch models for CMOS NAND gate:
VDD
(a)
VDD
(b)
VDD
(c)
Z=H
Z=H
Z=L
A=L
A=H
A=H
B=L
B=L
B=H
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 5
CMOS NOR
VDD
(a)
A
B
(b)
Q2
Q4
A B
Q1
Q2
Q3
Q4
Z
L
L
H
H
off
off
on
on
on
on
off
off
off
on
off
on
on
off
on
off
H
L
L
L
L
H
L
H
Z
Q1
Q3
(c)
A
B
Z
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
NAND and NOR are dual Boolean functions (to be discussed later). Their
logic circuits are dual circuits.
Performance of NAND or NOR is not the same because pMOS and nMOS
transistors have different characteristics. CMOS NAND gates are faster than
NOR gates because of series connnection of n-channel transistors has higher
conductance than series connection of p-channel transistors.
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 6
n-input NAND and NOR
VDD
(a)
Q2
(b)
Q4
Z
A
Q1
B
Q3
A B C
Q1
Q2
Q3
Q4
Q5
Q6
Z
L
L
H
H
L
L
H
H
off
off
off
off
on
on
on
on
on
on
on
on
off
off
off
off
off
off
on
on
off
off
on
on
on
on
off
off
on
on
off
off
off
on
off
on
off
on
off
on
on
off
on
off
on
off
on
off
H
H
H
H
H
H
H
L
L
L
L
L
H
H
H
H
Q6
A
B
C
(c)
C
L
H
L
H
L
H
L
H
Q5
Z
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
This implementation of n-input NAND or NOR uses n pairs of transistors.
Unfortunately, delay increases with the number of inputs:
delay ≈ a + bn2
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 7
Large fan-in gates
For a large number of inputs, it is faster to use multiple gates.
Example: 8-input NAND might be faster using three small gate delays.
I1
I2
I3
I4
OUT
I5
I6
I7
I8
I1
I2
I3
I4
I5
OUT
I6
I7
I8
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
Note the tradeoff between speed and cost: 22 transistors vs. 16 transistors.
Cost is proportional to the number of transistors or area in integrated circuit.
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 8
CMOS AND-OR-INVERT
The circuit below uses two AND gates (2 · 6 = 12T) and one NOR gate (4T).
A
B
Z
C
D
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
This logic function can be implemented directly using 8 transistors.
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
VDD
(a)
(b)
A
Q2
Q4
Q6
Q8
B
Z
C
Q5
Q3
D
Q7
Q1
October 3, 2002
A B C D
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Z
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
off
off
off
off
off
off
off
off
on
on
on
on
on
on
on
on
on
on
on
on
on
on
on
on
off
off
off
off
off
off
off
off
off
off
off
off
on
on
on
on
off
off
off
off
on
on
on
on
on
on
on
on
off
off
off
off
on
on
on
on
off
off
off
off
off
off
on
on
off
off
on
on
off
off
on
on
off
off
on
on
on
on
off
off
on
on
off
off
on
on
off
off
on
on
off
off
off
on
off
on
off
on
off
on
off
on
off
on
off
on
off
on
on
off
on
off
on
off
on
off
on
off
on
off
on
off
on
off
H
H
H
L
H
H
H
L
H
H
H
L
L
L
L
L
L
L
L
L
H
H
H
H
L
L
L
L
H
H
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
EE 121: Digital Design Laboratory
Lecture 3 – 9
CMOS steady-state electrical behavior
VDD = +5.0 V
(a)
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
(b)
VIN
Q1
Q2
VOUT
0.0 (L)
5.0 (H)
off
on
on
off
5.0 (H)
0.0 (L)
Q2
(p-channel)
VOUT
Q1
VIN
(n-channel)
(c)
IN
OUT
VOUT
5.0
HIGH
VCC
3.5
VOHmin
HIGH
undefined
VIHmin
0.7 VCC
High-state
DC noise margin
ABNORMAL
1.5
VILmax
0.3 VCC
LOW
0
LOW
VIN
0
1.5
LOW
3.5
undefined
5.0
0
Low-state
DC noise margin
HIGH
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
October 3, 2002
VOLmax
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
EE 121: Digital Design Laboratory
Lecture 3 – 10
Resistive loads, nonideal inputs
(a)
(b)
VCC
VCC
"sourcing
current"
CMOS
inverter
CMOS
inverter
Rp
> 1 MΩ
Rp
VOLmax
VIN
VIN
IOLmax
Rn
resistive
load
VOHmin
resistive
load
Rn
> 1 MΩ
IOHmax
"sinking
current"
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
Output voltage will differ from ideal high or low if too much output current.
The voltage shift may not matter for analog applications (LEDs). But the
output should not also be connected to inputs of CMOS gates.
Intermediate input voltages (e.g., 2.5 V) cause both transistors to turn on
partially and steady state current to flow.
Unused inputs should be connected to some signal or voltage level.
+5 V
(a)
(b)
(c)
X
Z
1 kΩ
X
logic 1
Z
logic 0
1k Ω
Z
X
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 11
Timing diagrams
(a)
(b)
tr
(c)
tf
VIHmin
HIGH
LOW
VILmax
tr
tf
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
TEST CIRCUIT FOR ALL OUTPUTS
LOADING
VCC
VCC
Parameter
t en
Pulse
Generator
VIN
VOUT
Device
Under
Test
RL
t dis
RL
CL
S1
S2
50 pF
or
150 pF
Open
Closed
1 KΩ
Closed
Open
tpZH
tpZL
S1
tpHZ
1 KΩ
tpLZ
S2
CL
RT
t pd
tH
VCC
50%
0.0 V
Clock
Input
tREM
Asynchronous Control
Input (PR, CLR, etc.)
VCC
50%
0.0 V
Synchronous Control
Input (CLKEN, etc.)
VCC
50%
0.0 V
tH
PROPAGATION DELAY
Open
Open
Open
PULSE WIDTH
LOW-HIGH-LOW
Pulse
tW
HIGH-LOW-HIGH
Pulse
VOH
50%
VOL
VOH
50%
VOL
THREE-STATE ENABLE AND DISABLE TIMES
Enable
Same-Phase
Input Transition
tPLH
tPHL
tPLH
tPHL
Output
Transition
Opposite-Phase
Input Transition
Closed
VCC
50%
0.0 V
Data
Input
tSU
—
Open
Closed
DEFINITIONS:
CL = Load capacitance, includes jig and probe capacitance.
RT = Termination resistance, should equal ZOUT of the Pulse Generator.
SETUP, HOLD, AND RELEASE TIMES
tSU
50 pF
or
150 pF
VCC
50%
0.0 V
Disable
Control
Input
tPZL
VOH
50%
VOL
Output
Normally LOW
VCC
50%
0.0 V
Output
Normally HIGH
tPLZ
50%
tPZH
tPHZ
50%
VCC
50%
0.0 V
VCC
10%
VOL
VOH
90%
0.0 V
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 12
CMOS dynamic electrical behavior
VDD = +5.0 V
VCC = +5.0 V
Equivalent load for
transition-time analysis
CMOS
inverter
Q2
Rp
on when
VIN is low
(p-channel)
VOUT
Q1
VIN
on when
VIN is high
(n-channel)
RL
VOUT
VIN
+
Rn
CL
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
VL
−
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
VCC = +5.0 V
VCC = +5.0 V
(a)
(b)
200 Ω
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
> 1 MΩ
AC load
AC load
VOUT = 5.0 V
VIN
VOUT
VIN
IOUT = 0
100 Ω
> 1 MΩ
IOUT
100 pF
100 pF
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 13
CMOS dynamic electrical behavior (2)
VCC = +5.0 V
VCC = +5.0 V
(a)
(b)
200 Ω
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
> 1 MΩ
AC load
AC load
VOUT = 5.0 V
VIN
VOUT
VIN
IOUT = 0
100 Ω
> 1 MΩ
IOUT
100 pF
100 pF
Fall time for high-to-low transition of CMOS output
Rp
Rn
200 Ω
> 1 MΩ
> 1 MΩ
100 Ω
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
5V
3.5 V
VOUT
1.5 V
0V
time
0
tf
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 14
CMOS dynamic electrical behavior (3)
VCC = +5.0 V
VCC = +5.0 V
(a)
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
(b)
200 Ω
> 1 MΩ
AC load
AC load
VOUT = 0 V
VIN
VIN
IOUT = 0
100 Ω
VOUT
IOUT
> 1 MΩ
100 pF
100 pF
Fall time for low-to-high transition of CMOS output
Rp
Rn
200 Ω
> 1 MΩ
> 1 MΩ
100 Ω
5V
3.5 V
VOUT
1.5 V
0V
time
0
tr
October 3, 2002
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
EE 121: Digital Design Laboratory
Lecture 3 – 15
Propagation delays
Rp
Rn
200 Ω
> 1 MΩ
> 1 MΩ
100 Ω
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
Rp
Rn
200 Ω
> 1 MΩ
> 1 MΩ
100 Ω
5V
5V
3.5 V
VOUT
3.5 V
VOUT
1.5 V
1.5 V
0V
time
0
0V
time
0
tr
tf
(a)
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
VIN
VOUT
tpHL
(b)
tpLH
VIN
VOUT
tpHL
tpLH
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 16
Power consumption
Current flows from power to ground through transistors, but may pause on
capacitors (input gates of other CMOS devices).
VCC = +5.0 V
VCC = +5.0 V
(a)
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
(b)
200 Ω
> 1 MΩ
AC load
VOUT = 0 V
VIN
100 Ω
AC load
VOUT
VIN
IOUT = 0
IOUT
> 1 MΩ
100 pF
October 3, 2002
100 pF
EE 121: Digital Design Laboratory
Lecture 3 – 17
Power consumption (2)
VCC = +5.0 V
VCC = +5.0 V
(a)
(b)
200 Ω
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
> 1 MΩ
AC load
VOUT = 5.0 V
VIN
AC load
VOUT
VIN
IOUT = 0
100 Ω
> 1 MΩ
100 pF
IOUT
100 pF
2
Power consumption formula: P = CPD · VDD
·f
CPD effective capacitance
VDD power-supply voltage
f
number of output transitions per second
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 18
Transmission gates
EN_L
normally
complementary
A
B
EN
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
Multiplexers can be built using T-gates:
VCC
X
Z
Y
S
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 19
Transmission gates (2)
This circuit uses only 6T compared to 14T for the NAND-NAND circuit:
(a)
Z
(b)
X
ZP
ZP
XZP
Z
F
YZ
YZ
Y
XZP
Copyright © 2000 by Prentice Hall, Inc.
Digital Design Principles and Practices, 3/e
F
1
0
1
0
1
0
1
0
1
0
Warning: delays through transmission gates can add up.
October 3, 2002
EE 121: Digital Design Laboratory
Lecture 3 – 20
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