2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
Features:
• High Gain:
– Typically 27-28 dB gain across 2.4-2.5 GHz
– Typically 30-34 dB gain across 4.9-5.8 GHz
• High linear output power:
– >25 dBm P1dB (Pulsed single-tone signal) across
2.4-2.5 GHz
– Meets 802.11b OFDM ACPR requirement up to
21.5 dBm across 2.4-2.5 GHz
– Meets 802.11g OFDM ACPR requirement up to
22 dBm across 2.4-2.5 GHz
– Added EVM~4% up to 19 dBm for
54 Mbps 802.11g signal across 2.4-2.5 GHz
– >25 dBm P1dB (Pulsed single-tone signal)
across 4.9-5.8 GHz
– Meets 802.11a OFDM ACPR requirement up to
22 dBm across 4.9-5.8GHz
– Added EVM~4% up to 18 dBm for
54 Mbps 802.11a signal across 4.9-5.8GHz
• High power-added efficiency/Low operating
current for 802.11a/b/g applications
– ~220 mA @ POUT = 22 dBm for 802.11g
– ~205 mA @ POUT = 21.5 dBm for 802.11b
– ~380 mA @ POUT = 22 dBm for 802.11a
• Built-in Ultra-low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~55 mA ICQ (802.11b/g)
– ~135 mA ICQ (802.11a)
• High-speed power-up/down
– Turn on/off time (10%-90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~2/1 dB gain/power variation between 0°C to
+85°C across 2.4-2.5 GHz
– ~8/2 dB gain/max linear power variation between
0°C to +85°C across 4.9-5.8 GHz
– ~1 dB detector variation over 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 24-lead WQFN (4mm x 4mm)
– Non-Pb (lead-free) packages available
Applications:
•
•
•
•
•
•
WLAN (IEEE 802.11a/g/b)
Japanese WLAN
HyperLAN2
Multimedia
Home RF
Cordless phones
Product Description
The SST13LP02 is a high-efficiency, dual-band power
amplifier based on the highly-reliable InGaP/GaAs HBT
technology.
SST13LP02 also has wide-range (>15 dB), temperaturestable (~1.5 dB over 85°C), single-ended power detectors
which lower users’ cost on power control.
The SST13LP02 can be easily configured for high-power
applications with superb power-added efficiency while
operating over the 802.11a/b/g frequency band for U.S.,
European, and Japanese markets (2.4-2.5 GHz and 4.95.8 GHz).
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control.
Ultra-low reference current (total IREF <2 mA) makes the
SST13LP02 controllable by an on/off switching signal
directly from the baseband chip. These features, coupled
with low operating current, make the SST13LP02 ideal
for the final stage power amplification in both batterypowered 802.11a/b/g WLAN transmitters and access
point applications.
The SST13LP02 has excellent linearity, typically ~4%
added EVM at 19 dBm output power, which is essential for
54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 22 dBm and 802.11b spectrum mask at 21.5
dBm. For 802.11a operation, the SST13LP02 has demonstrated typically ~4% added EVM at 18 dBm output power
while meeting 802.11a spectrum mask at 22 dBm. The
©2008 Silicon Storage Technology, Inc.
S71304-03-000
02/09
1
The SST13LP02 is offered in a 24-contact WQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
NC
1
RFIN_LB
VCC1_LB
VREF_LB
NC
Det_LB
NC
NC
Functional Blocks
24
23
22
21
20
19
18
RFOUT_LB
2
17
GND
GND
3
16
GND
GND
4
15
RFOUT_HB
RFIN_HB
5
14
RFOUT_HB
13
RFOUT_HB
VREF_HB
6
LB Bias Circuit
HB
Bias
Circuit
7
8
9
10
11
12
VCC1_HB
NC
VCC2_HB
NC
NC
Det_HB
1304 B1.1
FIGURE 1: Functional Block Diagram
©2008 Silicon Storage Technology, Inc.
S71304-03-000
2
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
NC
1
RFIN_LB
2
GND
3
GND
4
RFIN_HB
VREF_HB
VCC1_LB
VREF_LB
NC
Det_LB
NC
NC
Pin Assignments
24
23
22
21
20
19
18
RFOUT_LB
17
GND
16
GND
15
RFOUT_HB
5
14
RFOUT_HB
6
13
RFOUT_HB
Top View
(contacts facing down)
RF and DC GND
0
7
8
9
10
11
12
VCC1_HB
NC
VCC2_HB
NC
NC
Det_HB
1304 P1.1
FIGURE 2: Pin Assignments for 16-contact WQFN
©2008 Silicon Storage Technology, Inc.
S71304-03-000
3
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Pin DescriptionS
TABLE 1: Pin Description
Symbol
Pin No.
Pin Name
Type
Function
GND
0
Ground
Ground Pad
NC
1
No Connection
Unconnected Pin
RFin_LB
2
GND
3
Ground
I
GND
4
Ground
RFin_HB
5
RF Input for Low Band, DC decoupled
Ground Pin
Ground Pin
I
RF Input for High Band, DC decoupled
VREF_HB
6
Power Supply
PWR
Idle Current Control for High Band
Vcc1_HB
7
Power Supply
PWR
Vcc Power Supply for High Band
PWR
Vcc Power Supply for High Band
NC
8
No Connection
Vcc2_HB
9
Power Supply
Unconnected Pin
NC
10
No Connection
Unconnected Pin
NC
11
No Connection
Unconnected Pin
Det_HB
12
RFout_HB
13
Power Supply
O/PWR RF Output/Vcc power supply for High Band
RFout_HB
14
Power Supply
O/PWR RF Output/Vcc power supply for High Band
RFout_HB
15
Power Supply
O/PWR RF Output/Vcc power supply for High Band
GND
16
Ground
Ground Pin
GND
17
Ground
Ground Pin
RFout_LB
18
Power Supply
NC
19
No Connection
NC
20
No Connection
Det_LB
21
NC
22
No Connection
VREF_LB
23
Power Supply
PWR
Idle Current Control for Low Band
Vcc1_LB
24
Power Supply
PWR
Vcc Power Supply for Low Band
O
Detector Voltage Output for High Band
O/PWR RF Output/Vcc power supply for Low Band
Unconnected Pin
Unconnected Pin
O
Detector Voltage Output for Low Band
Unconnected Pin
T1.2 1304
©2008 Silicon Storage Technology, Inc.
S71304-03-000
4
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Tables 2 and 4 for the DC voltage and current
specifications. Refer to Figures 3 through 22 for the RF performance.
Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these
conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to
absolute maximum stress rating conditions may affect device reliability.
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V
Reference Voltage (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
©2008 Silicon Storage Technology, Inc.
S71304-03-000
5
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
For 802.11b/g Operation
TABLE 2: DC Electrical Characteristics
Symbol
Parameter
VCC
Supply Voltage
ICC
Supply Current
Min.
Typ
Max.
Unit
3.0
3.3
3.6
V
for 802.11g, 22 dBm
220
mA
for 802.11b, 21.5 dBm
205
mA
ICQ
Idle current for 802.11g to meet EVM<4% @ 18 dBm
IOFF
Shut down current
VREG
Reference Voltage with drop resistors
55
Test Conditions
mA
0.1
2.9
µA
V
T2.1 1304
TABLE 3: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
Typ
Max.
Unit
2485
MHz
FL-U
Frequency range
2400
G
Small signal gain
25
GVAR1
Gain variation over band (2400-2485 MHz)
GVAR2
Gain ripple over channel (20 MHz)
ACPR
Output power level meet 11b spectrum mask
21
dBm
Output power level meet 11g OFDM 54 Mbps spectrum
mask
21
dBm
dB
±0.5
0.2
dB
dB
Added EVM
Added EVM @ Pout = 19 dBm with (54 Mbps 11g OFDM)
4
%
2f
2nd Harmonics at Pout=18 dBm (54 Mbps 11g OFDM)
-45
dBc
3f
3rd Harmonics at Pout=18 dBm (54 Mbps 11g OFDM)
-50
dBc
ACPR1
Adjacent Channel Power Rejection at Pout=18 dBm
(54 Mbps 11g OFDM)
-35
dBc
ACPR2
Alt. Adjacent Channel Power Rejection at Pout=18 dBm
(54 Mbps 11g OFDM)
-45
dBc
T3.1 1304
©2008 Silicon Storage Technology, Inc.
S71304-03-000
6
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
For 802.11a Operation
TABLE
4: DC Electrical Characteristics
Symbol
Parameter
VCC
Supply Voltage
ICC
Supply Current
ICQ
Vcc quiescent current
Min.
Typ
Max.
Unit
3.0
3.3
3.6
V
for 802.11a, 22 dBm at VCC = 3.3V
IOFF
Shut down current
VREG
Reference Voltage with drop resistors
Total IREG
Total Reference Current
380
mA
135
mA
μA
1.0
2.9
V
2
mA
T4.1 1304
TABLE 5: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
4920
Typ
Max.
Unit
5805
MHz
FL-U
Frequency range
G
Small signal gain across 4.9~5.8GHz
GVAR
Gain variation over band (4.9-5.8 MHz)
5.0
dB
Gain variation over band (4.9-5.35 MHz)
1.0
dB
Gain variation over band (5.7-5.8 MHz)
1.0
dB
Gain variation over channel (20 MHz)
0.2
dB
26
dB
Added EVM
Added EVM @ Pout=18 dBm (54 Mbps 11a OFDM)
ACPR
Output power level with 802.11a mask compliance across
4.9-5.8 GHz
4
2f
2nd Harmonics at Pout=18 dBm (54 Mbps 11a OFDM)
-45
dBc
3f
3rd Harmonics at Pout=18 dBm (54 Mbps 11a OFDM)
-50
dBc
ACPR1
Adjacent Channel Power Rejection at Pout=18 dBm
(54 Mbps 11a OFDM)
-35
dBc
ACPR2
Alt. Adjacent Channel Power Rejection at Pout=18 dBm
(54 Mbps 11a OFDM)
-50
dBc
21
%
dBm
T5.1 1304
©2008 Silicon Storage Technology, Inc.
S71304-03-000
7
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Typical Low Band Performance for 802.11B/G
TEST CONDITIONS: VCC = 3.3V, TA = 25°C, VREF_LB = 2.9V UNLESS OTHERWISE NOTED
S12 versus Frequency
S11 versus Frequency
0
0
-10
-5
S12 (dB)
S11 (dB)
-20
-10
-15
-20
-30
-40
-50
-60
-25
-30
0.0
-70
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-80
0.0
9.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
7.0
8.0
9.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency
S22 versus Frequency
40
0
30
-5
S22 (dB)
S21 (dB)
20
10
0
-10
-10
-15
-20
-20
-25
-30
-40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-30
0.0
9.0
Frequency (GHz)
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
1304 SParmLowB.0
FIGURE 3: Low Band S-Parameters
©2008 Silicon Storage Technology, Inc.
S71304-03-000
8
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Test Conditions: VCC = 3.3V, 54 Mbps 802.11g OFDM signal
Output Power versus Input Power
21
20
Output Power (dBm)
19
18
17
16
15
14
Freq=2.412 GHz @ 25 C˚
Freq=2.442 GHz @ 25 C˚
Freq=2.484 GHz @ 25 C˚
Freq=2.412 GHz @ -10 C˚
Freq=2.442 GHz @ -10 C˚
Freq=2.484 GHz @ -10 C˚
Freq=2.412 GHz @ 85 C˚
Freq=2.442 GHz @ 85 C˚
Freq=2.484 GHz @ 85 C˚
13
12
11
10
9
-20
-19
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
Input Power (dBm)
-5
1304 F3.0
FIGURE 4: Low Band Output Power Versus Input Power
Power Gain Versus Output Power
40
Freq=2.412 GHz @ 25 C˚
Freq=2.442 GHz @ 25 C˚
Freq=2.484 GHz @ 25 C˚
Freq=2.412 GHz @ -10 C˚
Freq=2.442 GHz @ -10 C˚
Freq=2.484 GHz @ -10 C˚
Freq=2.412 GHz @ 85 C˚
Freq=2.442 GHz @ 85 C˚
Freq=2.484 GHz @ 85 C˚
38
Power Gain (dB)
36
34
32
30
28
26
24
22
20
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
1304 F4.0
FIGURE 5: Low Band Power Gain versus Output Power
©2008 Silicon Storage Technology, Inc.
S71304-03-000
9
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Supply Current Versus Output Power
170
Freq=2.412 GHz @ 25 C˚
Freq=2.442 GHz @ 25 C˚
Freq=2.484 GHz @ 25 C˚
Freq=2.412 GHz @ -10 C˚
Freq=2.442 GHz @ -10 C˚
Freq=2.484 GHz @ -10 C˚
Freq=2.412 GHz @ 85 C˚
Freq=2.442 GHz @ 85 C˚
Freq=2.484 GHz @ 85 C˚
160
Supply Current (mA)
150
140
130
120
110
100
90
80
70
60
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
1304 F5.0
FIGURE 6: Low Band Supply Current versus Output Power
PAE versus Output Power
22
Freq=2.412 GHz @ 25 C˚
Freq=2.442 GHz @ 25 C˚
Freq=2.484 GHz @ 25 C˚
Freq=2.412 GHz @ -10 C˚
Freq=2.442 GHz @ -10 C˚
Freq=2.484 GHz @ -10 C˚
Freq=2.412 GHz @ 85 C˚
Freq=2.442 GHz @ 85 C˚
Freq=2.484 GHz @ 85 C˚
20
18
16
PAE (%)
14
12
10
8
6
4
2
0
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
1304 F6.0
FIGURE 7: Low Band PAE versus Output Power
©2008 Silicon Storage Technology, Inc.
S71304-03-000
10
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
EVM versus Output Power
10
Freq=2.412 GHz @ 25 C˚
Freq=2.442 GHz @ 25 C˚
Freq=2.484 GHz @ 25 C˚
Freq=2.412 GHz @ -10 C˚
Freq=2.442 GHz @ -10 C˚
Freq=2.484 GHz @ -10 C˚
Freq=2.412 GHz @ 85 C˚
Freq=2.442 GHz @ 85 C˚
Freq=2.484 GHz @ 85 C˚
9
8
EVM (%)
7
6
5
4
3
2
1
0
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
1304 F7.0
FIGURE 8: Low Band EMV Versus Output Power
10
Freq = 2.412 GHz
0
Freq = 2.442 GHz
Freq = 2.484 GHz
Amplitude (dB)
-10
-20
-30
-40
-50
-60
-70
2.35
2.40
2.45
2.50
2.55
Frequency (GHz)
1304 F8.0
FIGURE 9: Low Band 802.11b Spectrum Mask at 22 dBm with DC Current of 220 mA
©2008 Silicon Storage Technology, Inc.
S71304-03-000
11
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Test Conditions: VCC = 3.3V, TA = 25°C, 1 Mbps 802.11b CCK Signal
10
Freq = 2.412 GHz
0
Freq = 2.442 GHz
Freq = 2.484 GHz
-10
Amplitude (dB)
-20
-30
-40
-50
-60
-70
-80
2.35
2.40
2.45
2.50
2.55
Frequency (GHz)
1304 F9.0
FIGURE 10: Low Band 802.11b Spectrum Mask at 21.5 dBm with DC Current of 205 mA
©2008 Silicon Storage Technology, Inc.
S71304-03-000
12
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Low Band Power Detector characteristics
Test Conditions: VCC = 3.3V, VREG_LB = 2.85V, TA = 25°C, 54 Mbps 802.11g OFDM Signal
Detector Voltage versus Output Power
1.4
Detector Voltage (V)
1.3
1.2
1.1
1.0
Freq=2.412 GHz @ 25 C˚
Freq=2.442 GHz @ 25 C˚
Freq=2.484 GHz @ 25 C˚
Freq=2.412 GHz @ -10 C˚
Freq=2.442 GHz @ -10 C˚
Freq=2.484 GHz @ -10 C˚
Freq=2.412 GHz @ 85 C˚
Freq=2.442 GHz @ 85 C˚
Freq=2.484 GHz @ 85 C˚
0.9
0.8
0.7
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
1304 F10.0
FIGURE 11: Low Band Detector Voltage versus output power
©2008 Silicon Storage Technology, Inc.
S71304-03-000
13
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Typical High Band Performance for 802.11a
Test Conditions: VCC = 3.3V, TA = 25°C, VREF_HB = 2.9V unless otherwise noted
S11 versus Frequency
S12 versus Frequency
0
0
-10
-5
S12 (dB)
S11 (dB)
-20
-10
-15
-20
-30
-40
-50
-60
-25
-30
0.0
-70
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-80
0.0
9.0
1.0
2.0
3.0
Frequency (GHz)
4.0
5.0
6.0
7.0
8.0
9.0
7.0
8.0
9.0
Frequency (GHz)
S22 versus Frequency
S21 versus Frequency
0
40
30
-5
S22 (dB)
S21 (dB)
20
10
0
-10
-10
-15
-20
-20
-25
-30
-40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-30
0.0
9.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
1304 SParmHighB.0
FIGURE 12: High Band S-Parameters
©2008 Silicon Storage Technology, Inc.
S71304-03-000
14
02/09
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Typical Performance characteristics for 802.11A
Test Conditions: VCC = 3.3V, 54 Mbps 802.11a OFDM Signal
Output Power versus Input Power
22
21
20
Output Power (dBm)
19
18
17
16
Freq=4.92 GHz @ 25 C˚
Freq=5.18 GHz @ 25 C˚
Freq=5.32 GHz @ 25 C˚
Freq=5.805 GHz @ 25 C˚
Freq=4.92 GHz @ -10 C˚
Freq=5.18 GHz @ -10 C˚
Freq=5.32 GHz @ -10 C˚
Freq=5.805 GHz @ -10 C˚
Freq=4.92 GHz @ 85 C˚
Freq=5.18 GHz @ 85 C˚
Freq=5.32 GHz @ 85 C˚
Freq=5.805 GHz @ 85 C˚
15
14
13
12
11
10
9
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Input Power (dBm)
1304 F12.0
FIGURE 13: High Band Output Power Versus Input Power
Power Gain (dB)
Power Gain versus Output Power
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
Freq=4.92 GHz @ 25 C˚
Freq=5.18 GHz @ 25 C˚
Freq=5.32 GHz @ 25 C˚
Freq=5.805 GHz @ 25 C˚
Freq=4.92 GHz @ -10 C˚
Freq=5.18 GHz @ -10 C˚
Freq=5.32 GHz @ -10 C˚
Freq=5.805 GHz @ -10 C˚
Freq=4.92 GHz @ 85 C˚
Freq=5.18 GHz @ 85 C˚
Freq=5.32 GHz @ 85 C˚
Freq=5.805 GHz @ 85 C˚
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Output Power (dBm)
1304 F13.0
FIGURE 14: High Band Power Gain versus Output Power
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Supply Current versus Output Power
400
Freq=4.92 GHz @ 25 C˚
Freq=5.18 GHz @ 25 C˚
Freq=5.32 GHz @ 25 C˚
Freq=5.805 GHz @ 25 C˚
Freq=4.92 GHz @ -10 C˚
Freq=5.18 GHz @ -10 C˚
Freq=5.32 GHz @ -10 C˚
Freq=5.805 GHz @ -10 C˚
Freq=4.92 GHz @ 85 C˚
Freq=5.18 GHz @ 85 C˚
Freq=5.32 GHz @ 85 C˚
Freq=5.805 GHz @ 85 C˚
380
360
Supply Current (mA)
340
320
300
280
260
240
220
200
180
160
140
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Output Power (dBm)
1304 F14.0
FIGURE 15: High Band Supply Current Versus Output Power
PAE versus Output Power
15
Freq=4.92 GHz @ 25 C˚
Freq=5.18 GHz @ 25 C˚
Freq=5.32 GHz @ 25 C˚
Freq=5.805 GHz @ 25 C˚
Freq=4.92 GHz @ -10 C˚
Freq=5.18 GHz @ -10 C˚
Freq=5.32 GHz @ -10 C˚
Freq=5.805 GHz @ -10 C˚
Freq=4.92 GHz @ 85 C˚
Freq=5.18 GHz @ 85 C˚
Freq=5.32 GHz @ 85 C˚
Freq=5.805 GHz @ 85 C˚
14
13
12
11
PAE (%)
10
9
8
7
6
5
4
3
2
1
0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Output Power (dBm)
1304 F15.0
FIGURE 16: High Band PAE versus Output Power
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
EVM versus Output Power
10
Freq=4.92 GHz @ 25 C˚
Freq=5.18 GHz @ 25 C˚
Freq=5.32 GHz @ 25 C˚
Freq=5.805 GHz @ 25 C˚
Freq=4.92 GHz @ -10 C˚
Freq=5.18 GHz @ -10 C˚
Freq=5.32 GHz @ -10 C˚
Freq=5.805 GHz @ -10 C˚
Freq=4.92 GHz @ 85 C˚
Freq=5.18 GHz @ 85 C˚
Freq=5.32 GHz @ 85 C˚
Freq=5.805 GHz @ 85 C˚
9
8
EVM (%)
7
6
5
4
3
2
1
0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Output Power (dBm)
1304 F16.0
FIGURE 17: High Band EVM versus Output Power
10
0
Amplitude (dB)
-10
-20
-30
-40
-50
-60
-70
4.85
4.87
4.89
4.91
4.93
Frequency (GHz)
4.95
4.97
4.99
1304 F17.0
FIGURE 18: High Band 802.11a Spectrum Mask at 4.92 GHz at Output Power 22.5 dBm with
DC Current at 410 mA
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
10
0
Amplitude (dB)
-10
-20
-30
-40
-50
-60
-70
5.11
5.13
5.15
5.17
5.19
5.21
5.23
5.25
Frequency (GHz)
1304 F18.0
FIGURE 19: High Band 802.11a Spectrum Mask at 5.18 GHz at Output Power 22.5 dBm with
DC Current at 380 mA
10
0
Amplitude (dB)
-10
-20
-30
-40
-50
-60
-70
4.85
4.87
4.89
4.91
4.93
4.95
4.97
4.99
Frequency (GHz)
1304 F19.0
FIGURE 20: High Band 802.11a Spectrum Mask at 5.32 GHz at Output Power 22.5 dBm with
DC Current at 380 mA
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
10
0
Amplitude (dB)
-10
-20
-30
-40
-50
-60
-70
5.11
5.13
5.15
5.17
5.19
5.21
5.23
5.25
Frequency (GHz)
1304 F20.0
FIGURE 21: High Band 802.11a Spectrum Mask at 5.805 GHz at Output Power 22 dBm with
DC Current at 390 mA
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
High Band Power Detector characteristics
Test Conditions: VCC = 3.3V, 54 Mbps 802.11a OFSM Signal
Detector Voltage versus Output Power
1.5
Freq=4.92 GHz @ 25 C˚
Freq=5.18 GHz @ 25 C˚
Freq=5.32 GHz @ 25 C˚
Freq=5.805 GHz @ 25 C˚
Freq=4.92 GHz @ -10 C˚
Freq=5.18 GHz @ -10 C˚
Freq=5.32 GHz @ -10 C˚
Freq=5.805 GHz @ -10 C˚
Freq=4.92 GHz @ 85 C˚
Freq=5.18 GHz @ 85 C˚
Freq=5.32 GHz @ 85 C˚
Freq=5.805 GHz @ 85 C˚
Detector Voltage (V)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Output Power (dBm)
1304 F21.0
FIGURE 22: High Band Detector Voltage versus Output Power
©2008 Silicon Storage Technology, Inc.
S71304-03-000
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Vcc_LB
C12 0.1uF
C5 0.1uF
Det_LB
T4
5575Ω
R1 249Ω
C8 10pF
L2
8.2nH
Vreg_LB
C1
10pF
24
23
22
21
20
19
T7 50Ω
1
T1 50Ω
RFout_LB
C14 47pF
L1 1.5nH
RFin_LB
C2
1.8pF
T2 50Ω
2
17
3
16
4
15
5
14
C3
0.5pF
C10
1.8pF
T8 50Ω T10 50Ω T11 50Ω T12 50Ω
T3 50Ω
RFin_HB
6
HB
Bias
Circuit
C4
10pF
RFout_HB
8
9
10
11
T6
5575Ω
T5
5575Ω
C6 0.1uF
C15 C16 1pF
0.3pF
C11
0.8pF
13
7
R2 221Ω
Vreg_HB
T9 50Ω
18
LB Bias Circuit
L3
8.2nH
12
Det_HB
C9
10pF
C13 0.1uF
C7 0.1uF
Vcc_HB
1304 Schematic1.1
Operating Conditions: Vreg_LB = 2.9V, Vcc_LB = 3.3 V, Vreg_HB = 2.9V, Vcc_HB = 3.3V
FIGURE 23: Typical Application Circuit
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
TABLE 6: Part List
Symbol
Value
Note
C1
10pF
Larger value can be used if meeting on/off toggling speed requirement of low ban on system
board
C2
1.8pF
LB input matching
C3
0.5 pF
HB input matching, no-pop if -6dB input return loss is acceptable
C4
10pF
Larger value can be used if meeting on/off toggling speed requirement for high band on
system board
C5
0.1uF
LB bypassing
C6
0.1uF
HB bypassing
C7
0.1uF
HB bypassing
C8
10pF
LB power detector bypassing/video bandwidth control
C9
10pF
HB power detector bypassing/video bandwidth control
C10
1.8pF
LB band output matching, 1.5~2.0 pF determined by length/impedance of T7, high Q part
preferred
C11
0.8pF
HB output matching, high Q cap preferred
C12
0.1uF
LB bypassing, position close to L2
C13
0.1uF
HB bypassing, position close to L3
C14
47pF
LB output DC blocking
C15
0.3pF
HB output matching, high Q cap preferred
C16
1pF
HB output matching / DC blocking
L1
1.5nH
LB input matching, can be replaced by an 240mil 50Ω microstrip
L2
8.2nH
LB output RF chock, coil type preferred
L3
8.2nH
HB output RF chock, coil type preferred
R1
249Ω
Needs adjusting for different Vreg_LB
R2
221Ω
Needs adjusting for different Vreg_HB or 4.9~5.9GHz simultaneous coverage with lower EVM
T1,T2,T9
50Ω
Length not critical
T3
50Ω
T4
55~75Ω
Impedance not critical, recommended length=50mil (<130mil should be fine)
HB input matching, 50<length<70mil
T5
55~75Ω
Impedance not critical, length=50mil ± 10mil
T6
55~75Ω
Impedance not critical, length=50mil ± 10mil
T7
50Ω
Recommend length =60mil with C10=1.8pF (40<length <120mil OK with C10=1.5~2.0pF)
T8
50Ω
Critical for HB output matching, length=30mil ± 5mil
T10
50Ω
Critical for HB output matching length=45mil ± 5mil
T11
50Ω
Critical for output matching, length=25mil ± 5mil
T12
50Ω
Length = 40mil±5mil
T6.1 1304
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Product Ordering Information
SST13LP
SSTxxLP
02
xx
-
QD
XX
F
X
Environmental Attribute
F1 = non-Pb contact (lead) finish
Package Modifier
D = 24 contact
Package Type
Q = WQFN
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
3 = 2.4 GHz / 5 GHz Dual-Band
Product Line
1 = SST Communications
1. Environmental suffix “F” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
Valid combinations for SST13LP02
SST13LP02-QDF
SST13LP02 Evaluation Kits
SST13LP02-QDF-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
packaging diagrams
TOP VIEW
SIDE VIEW
BOTTOM VIEW
See notes
2 and 3
0.2
Pin #1
Pin #1
2.3
4.00
± 0.08
0.075
4.00
± 0.08
0.5 BSC
2.3
0.05 Max
0.30
0.18
0.45
0.35
0.80
0.70
1mm
24-wqfn-4x4-QD-1.2
Note: 1. Complies with JEDEC JEP95 MO-220J, variant WGGD-4 except external paddle dimensions.
2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch.
3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads.
This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit.
Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.
4. Untoleranced dimensions are nominal target dimensions.
5. All linear dimensions are in millimeters (max/min).
FIGURE 24: 24-contact Very-very-thin-profile Quad Flat No-lead (WQFN)
SST Package Code: QD
TABLE 7: Revision History
Revision
Description
Date
00
•
1304: Conversion from MRD SST13LP02
Nov 2005
01
•
•
•
Updated information for pins 3, 4, 16, and 17 in Figures 1 and 2 and Table 1.
Updated Figure 23.
Revised AC Electrical Characteristics for Configuration tables 3 and 5.
Sep 2006
02
•
Updated document status from Preliminary Specification to Data Sheet
Apr 2008
03
•
Updated “Contact Information” on page 25.
Feb 2009
©2008 Silicon Storage Technology, Inc.
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2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
SST13LP02
Data Sheet
Contact Information
Marketing
SST Communications Corp.
5340 Alla Road, Ste. 210
Los Angeles, CA 90066
Tel: 310-577-3600
Fax: 310-577-3605
Sales and Marketing Offices
NORTH AMERICA
ASIA PACIFIC NORTH
Silicon Storage Technology, Inc.
1171 Sonora Court
Sunnyvale, CA 94086-5308
Tel: 408-735-9110
Fax: 408-735-9036
SST Macao
Room N, 6th Floor,
Macao Finance Center, No. 202A-246,
Rua de Pequim, Macau
Tel: 853-2870-6022
Fax: 853-2870-6023
EUROPE
ASIA PACIFIC SOUTH
Silicon Storage Technology Ltd.
Mark House
9-11 Queens Road
Hersham, Surrey
KT12 5LU UK
Tel: 44 (0) 1932-238133
Fax: 44 (0) 1932-230567
SST Communications Co.
16F-6, No. 75, Sec.1, Sintai 5th Rd
Sijhih City, Taipei County 22101
Taiwan, R.O.C.
Tel: 886-2-8698-1198
Fax: 886-2-8698-1190
JAPAN
KOREA
SST Japan
NOF Tameike Bldg, 9F
1-1-14 Akasaka, Minato-ku
Tokyo, Japan 107-0052
Tel: 81-3-5575-5515
Fax:81-3-5575-5516
SST Korea
6F, Heungkuk Life Insurance Bldg 6-7
Sunae-Dong, Bundang-Gu, Sungnam-Si
Kyungki-Do, Korea, 463-020
Tel: 82-31-715-9138
Fax: 82-31-715-9137
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2008 Silicon Storage Technology, Inc.
S71304-03-000
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02/09