GaAs PHEMT MMIC
Driver Amplifier, QFN4mm
DC to 24 GHz
EMD1706
FEATURES
◊15 dB Gain @ 10 GHz
◊+23 dBm P1dB Output Power @ 10 GHz
◊+8V @ 130 mA typical supply voltage
◊Low Cost QFN 4mm leadless RoHS
Compliant package
◊ Hermetically Sealed
◊Die available upon request
Typical Applications
AMPLIFIERS || GaAs MMIC PHEMT
††General Purpose Application
††Commercial and Industrial Application
††VSAT
††Test Instruments
Product Description
Eclipse Microdevices EMD1706 is a GaAs MMIC PHEMPT Distributed
general purpose driver amplifier. This MMIC is ideal for applications
that requires a typical P1dB output power of +23 dBm up to 20 GHz,
while requiring only 130mA from a + 8 Volt supply. Gain flatness
of this device is less than 0.8 dB from DC to 22 GHz.
The EMD1706 comes in a small RoHS compliant 4mm QFN leadless
package and has excellent RF and thermal properties ideal for
commercial and industrial applications.
ELECTRICAL SPECIFICATIONsupply.
@ +25 °C,
Vdd=8V,Ids=130mA
Gain
flatness of this device is
Parameters
Gain
Gain Flatness
FREQ.
(GHz)
MIN
2.0
8.0
14.0
20.0
14.2
13.0
13.5
14.0
SPECIFICATION
TYPICAL
MAX
14.7
14.3
14.5
15.3
dc to 10.0
10.0 to 20.0
±0.20
±0.45
Gain Variation Over Temperature
Units
dB
dB
dB
dB
±0.40
±0.80
dB
dB
0.02
dB/°C
Noise Figure
4.5
dB
Input Return Loss(S11)
10
dB
Output Return Loss(S22)
14
dB
1 dB Compression Point(P1dB)
Saturated Output Power(Psat)
2.0
8.0
14.0
20.0
23.0
22.5
22.0
21.0
dBm
dBm
dBm
dBm
2.0
8.0
14.0
20.0
23.0
23.5
22.5
23.0
dBm
dBm
dBm
dBm
28
dBm
Third-Order Output Intercept Point
1-5
2095-60 Ringwood Ave ◊ San Jose, CA 95131
408.526.1100 ◊
sales@eclipsemdi.com ◊
408.526.1105
www.eclipsemdi.com
1706 – DC – 24 GHz Distributed Amplifier – in Plastic
1706 in Plastic - Power Performance
26
P1dB/dBm
Psat/dBm
24
22
Power/dBm
20
18
16
14
12
10
0
2
4
6
8
10
12
14
16
Frequency/GHz
2095-60 Ringwood Ave ◊ San Jose, CA 95131
408.526.1100 ◊
sales@eclipsemdi.com ◊
408.526.1105
www.eclipsemdi.com
18
20
22
24
GaAs PHEMT MMIC
Driver Amplifier, QFN4mm
DC to 24 GHz
EMD1706
Functional Block Diagram
AMPLIFIERS || GaAs MMIC PHEMT
Absolute Maximum Rating
RF Input Power:
Drain Voltage(Vdd):
Gate Voltage(Vgg):
Max Tj 85°C:
Storage Temp:
Operating Temp:
Vgg2
+18 dBm
+8.0 VDC
-2 to 0 Volts
+110°C
-55 to +150°C
-40 to +85°C
24
NC
ACG1
NC
ACG2
NC
23
22
21
20
19
NC
1
18
NC
NC
2
17
GND
GND
3
16
4
15
RF-OUT & Vdd
1706
RF-IN
RECOMMENDED PCB LAYOUT
24
Ø.010
[Ø0.25]
5
.039
[1.00]
GND
1
SQ .159
[4.05]
.032
SQ .105
[0.80]
[2.68]
RF INPUT
14
6
13
10
7
8
9
NC
Vgg1
NC
NC
12
11
ACG4
GND
ACG3
NC
.022
[0.55]
.012
[0.30]
PAD WIDTH
.010 GAP
[0.25]
NOTES:
1. MATERIAL: ROGERS 4350, 10 MIL THICK
2, DIMENSIONS ARE IN INCHES[MM]
2.500SQ
4.000SQ
2.200SQ
24
1
18
REF 4.000
0.500
19 20 21 22 23 24
1
17
2
16
3
15
4
14
5
6
13
12 11 10
9
8 7
0.230
REF 0.800
TOP VIEW
0.05
3-5
2095-60 Ringwood Ave ◊ San Jose, CA 95131
408.526.1100 ◊
sales@eclipsemdi.com ◊
408.526.1105
www.eclipsemdi.com
0.320
TYP
BOTTOM VIEW
GaAs PHEMT MMIC
Driver Amplifier, QFN4mm
DC to 24 GHz
EMD1706
0.091 [2.30]
0.016 [0.39]
0.010 [0.24]
0.061 [1.55]
0.057 [1.45]
0.040 [1.01]
0.036 [0.92]
0.030 [0.77]
0.018 [0.46]
0.015 [0.37]
1706
4-5
2095-60 Ringwood Ave ◊ San Jose, CA 95131
408.526.1100 ◊
sales@eclipsemdi.com ◊
408.526.1105
www.eclipsemdi.com
0.087 [2.20]
0.052 [1.32]
0.046 [1.17]
0.040 [1.02]
0.034 [0.87]
0.000 [0.00]
0.000 [0.00]
0.004 [0.09]
AMPLIFIERS || GaAs MMIC PHEMT
0.004 [0.09]
Die Outline - Inches[mm]
GaAs PHEMT MMIC
Driver Amplifier, QFN4mm
DC to 24 GHz
EMD1706
AMPLIFIERS || GaAs MMIC PHEMT
Application Circuit
REFERENCE
DESCRIPTION
Vdd
8V@ 130mA
Vgg1
-0.61V
Vgg2
3.5V
C2,C4,C5
100 pF
C1,C3,C6,C7,C8,C10 1000 pF
C9
0.1uF
L1
0.22uH
Vgg2
C3
C2
C4
24
C1
22
20
4
Vdd
L1
16
RF-IN
15
5
12
10
C7
8
C10
EXTERNAL
BIAS CIRCUIT
OR TEE
C6
Vgg1
C9
C8
C5
NOTE: Adjust Vgg1 to between -2 to 0 volts to achieve Ids = 130 mA typical
5- 5
2095-60 Ringwood Ave ◊ San Jose, CA 95131
408.526.1100 ◊
sales@eclipsemdi.com ◊
408.526.1105
www.eclipsemdi.com
RF-OUT