W82M32V-XBX 2Mx32 SRAM 3.3V MULTI-CHIP PACKAGE FEATURES Low Power CMOS Access Times of 12, 15, 17, 20ns TTL Compatible Inputs and Outputs Packaging Fully Static Operation: 2 • 255 PBGA, 25mm x 25mm, 625mm Organized as 2Mx32 • No clock or refresh required. Three State Output. Commercial, Industrial and Military Temperature Ranges Low Voltage Operation: * This product is subject to change without notice. • 3.3V ± 10% Power Supply PIN CONFIGURATION FOR W82M32V-XBX TOP VIEW 1 A 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC B NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC C NC NC NC A2 A1 A0 GND GND VCC VCC A18 A17 A16 GND NC NC D NC NC CS#2 A3 A4 D14 D15 NC CS#4 D24 D25 OE# A15 NC NC NC E NC NC D9 D8 A19 D12 D13 GND VCC D26 D27 WE#4 D31 D30 NC NC NC F NC NC D10 D11 GND GND GND GND VCC VCC VCC VCC D28 D29 NC G NC NC WE#2 GND GND GND GND GND VCC VCC VCC VCC VCC NC NC NC H NC NC GND GND GND GND GND GND VCC VCC VCC VCC VCC VCC NC NC NC J NC NC VCC VCC VCC VCC VCC VCC GND GND GND GND GND GND NC K NC NC CS#1 VCC VCC VCC VCC VCC GND GND GND GND GND NC NC NC L NC NC D1 D0 VCC VCC VCC VCC GND GND GND GND D23 D22 NC NC M NC NC D2 D3 A20 D7 D5 VCC GND D17 D16 CS#3 D20 D21 NC NC N NC NC WE#1 A6 A5 D6 D4 NC WE#3 D19 D18 A14 A13 NC NC NC P NC NC GND A7 A8 A9 VCC VCC GND GND A10 A11 A12 VCC NC NC R NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC T NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC PIN DESCRIPTION I/O0-31 A0-20 WE#1-4 CS#1-4 OE# VCC GND NC BLOCK DIAGRAM Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected WE#1 CS#1 WE#2 CS#2 WE#3 CS#3 WE#4 CS#4 OE# A0-20 2M x 8 8 I/O 0-7 2M x 8 8 I/O 8-15 2M x 8 8 I/O 16-23 2M x 8 8 I/O 24-31 Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 8 © 2011 Microsemi Corporation. All rights reserved. 1 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com W82M32V-XBX ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC Min -55 -65 -0.5 -0.5 TRUTH TABLE Max +125 +150 4.6 150 4.6 Unit °C °C V °C V CS# H L L L OE# X L X H WE# X H L H RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min 3.0 2.2 -0.3 Max 3.6 VCC + 0.3 +0.8 Mode Standby Read Write Out Disable Data I/O High Z Data Out Data In High Z Power Standby Active Active Active CAPACITANCE Unit V V V (TA = +25°C) Parameter OE# capacitance WE#1-4 capacitance CS#1-4 capacitance Data I/O capacitance Address input capacitance Symbol COE CWE CCS CI/O CAD Conditions VIN = 0 V, f = 1.0 MHZ VIN = 0 V, f = 1.0 MHZ VIN = 0 V, f = 1.0 MHZ VI/O = 0 V, f = 1.0 MHZ VIN = 0 V, f = 1.0 MHZ Max Unit 30 pF 10 pF 10 pF 10 pF 30 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ 125°C) Parameter Input Leakage Current Output Leakage Current Operating Supply Current (x 32 Mode) Standby Current Output Low Voltage Output High Voltage Sym ILI ILO ICC x 32 ISB VOL VOH Conditions VIN = GND to VCC CS# = VIH, OE# = VIH, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHZ, VCC = 3.6V CS# = VIH, OE# = VIH, f = 5MHZ, VCC = 3.6V IOL = 8mA IOH = -4.0mA Min 2.4 Max 10 10 1100 200 0.4 Units μA μA mA mA V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V. NOTE: Contact factory for low power option. Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 8 © 2011 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com W82M32V-XBX AC CHARACTERISTICS (VCC = 3.3V, -55°C ≤ TA ≤ +125°C) -12 Parameter Symbol Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 Min -15 Max Min 12 -17 Max 15 Min Max 17 12 3 3 1 17 8 3 1 7 7 20 3 15 8 3 1 Max 17 3 12 7 Min 20 15 3 -20 20 10 3 1 8 8 8 8 10 10 Units ns ns ns ns ns ns ns ns ns. 1. This parameter is guaranteed by design but not tested AC CHARACTERISTICS (VCC = 3.3V, -55°C ≤ TA ≤ +125°C) Parameter Symbol -12 Min Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH -15 Max Min 12 10 10 8 10 0 0 2 -17 Max 15 12 12 9 12 0 0 2 7 Min 17 12 12 9 14 0 0 3 0 Min Units Max 20 14 14 10 14 0 0 3 8 0 -20 Max 8 0 9 0 ns ns ns ns ns ns ns ns ns ns 1. This parameter is guaranteed by design but not tested AC TEST CIRCUIT AC TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level IOL Current Source D.U.T. Unit V ns V V NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 W. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. VZ 1.5V (Bipolar Supply) CEFF = 50pf Typ VIL = 0, VIH = 2.5 5 1.5 1.5 IOH Current Source Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 8 © 2011 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com W82M32V-XBX TIMING WAVEFORM – READ CYCLE tRC ADDRESS tRC tAA ADDRESS CS# tAA tOH DATA I/O tCHZ tACS tCLZ PREVIOUS DATA VALID OE# DATA VALID tOE tOLZ DATA I/O READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH) tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 2 (WE# = VIH) WRITE CYCLE – WE# CONTROLLED tWC ADDRESS tAW tAH tCW CS# tAS tWP WE# tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE# CONTROLLED WRITE CYCLE – CS# CONTROLLED tWC ADDRESS tAS tAW tAH tCW CS# tWP WE# tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE# CONTROLLED Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 8 © 2011 Microsemi Corporation. All rights reserved. 4 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com W82M32V-XBX PACKAGE 781 – 255 BALL GRID ARRAY BOTTOM VIEW 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 255x Ø0.762(0.030) NOM A B C 19.05 (0.750) NOM 25.1 (0.988) MAX D E F G H 1.27 (0.050) NOM J K L M N P R T 0.69 (0.027) NOM 1.27 (0.050) NOM 19.05 (0.750) NOM 2.22 (0.087) MAX 25.1 (0.955) MAX ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 8 © 2011 Microsemi Corporation. All rights reserved. 5 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com W82M32V-XBX ORDERING INFORMATION W 8 2M 32 V - XX X X MICROSEMI CORPORATION SRAM ORGANIZATION, 2Mx32 User configurable as 4Mx16 or 8Mx8 Low Voltage Supply 3.3V ± 10% ACCESS TIME (ns) PACKAGE TYPE: B = 25mm x 25mm, 255 PBGA DEVICE GRADE: M = Military I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 8 © 2011 Microsemi Corporation. All rights reserved. 6 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com W82M32V-XBX Document Title 2M x 32 Asynchronous SRAM Revision History Rev # History Release Date Status Rev 0 Initial Release July 2002 Advanced Rev 1 Changes 1.1 Add AC/DC Electricals & Timing Diagrams (Pg. 1-7) 1.2 Change Pinout to full 255 (16x16) array 1.3 Change Package Dimension to full 255 (16x16) array October 2002 Advanced Rev 2 Changes (Pg.1,5,6,7) 2.1 Change package dimension from 27mm square to 25mm square 2.2 Change package height from 2.20mm to 2.70mm Max May 2002 Advanced Rev 3 Changes (Pg.1,5,7) 3.1 Change package mechanical drawing to new format. November 2003 Advanced Rev 4 Changes (Pg.1,7) 4.1 Change status to preliminary. May 2004 Preliminary Rev 5 Changes (Pg. 1, 7) 5.1 Change status to Final April 2006 Final Rev 6 Change (Pg. 5) 6.1 Change max height dimension to 2.21mm/0.087in October 2008 Final Rev 7 Change (Pg. 5) 7.1 Change standby current (ISB) from 400 to 200mA May 2009 Final Rev 8 Changes (Pg. 1-7) April 2011 Final 8.1 Change document layout from White Electronic Designs to Microsemi Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 8 © 2011 Microsemi Corporation. All rights reserved. 7 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com www.microsemi.com