Si8483DB
www.vishay.com
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-12
RDS(on) () (MAX.)
ID (A) e
0.026 at VGS = -4.5 V
-16
0.035 at VGS = -2.5 V
-16
0.055 at VGS = -1.8 V
-13
0.092 at VGS = -1.5 V
-2.5
MICRO FOOT® 1.5 x 1
x
xxx xx
x
1
m
m
S
3
D
4
mm
1.5
1
Backside View
Qg (TYP.)
• TrenchFET® power MOSFET
• Ultra-small 1.5 mm x 1 mm maximum outline
• Ultra-thin 0.59 mm maximum height
21 nC
S
2
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
1
G
6
S
5
D
Bump Side View
S
• Load switch for smart
phones, tablet PCs, and
mobile computing
- Low voltage drop
- Low power consumption
- Increased battery life
G
Marking Code: xxxx = 8483
xxx = Date / lot traceability code
D
P-Channel MOSFET
Ordering Information:
Si8483DB-T2-E1 (Lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-12
Gate-Source Voltage
VGS
± 10
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
-15
ID
-8.7 a, b
-7 a, b
Maximum Power Dissipation
IDM
TC = 25 °C
TA = 25 °C
-10.8
IS
-2.3 a, b
13
TC = 70 °C
8.4
PD
Package Reflow Conditions c
W
2.77 a, b
1.77 a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
-25
TC = 25 °C
TA = 25 °C
V
-16
TA = 70 °C
Pulsed Drain Current
UNIT
TJ, Tstg
-55 to +150
IR/Convection
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, f
Maximum Junction-to-Case (Drain)
Steady State
SYMBOL
TYPICAL
MAXIMUM
RthJA
37
45
RthJC
7
9.5
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d. Case is defined as the top surface of the package.
e. Based on TC = 25 °C.
f. Maximum under steady state conditions is 85 °C/W.
S15-0932-Rev. C, 20-Apr-15
Document Number: 63553
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8483DB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0, ID = -250 μA
-12
-
-
V
-
-7
-
-
2.8
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = -250 μA
mV/°C
VGS(th)
VDS = VGS, ID = -250 μA
-0.4
-
-0.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
VDS = -12 V, VGS = 0 V
-
-
-1
VDS = -12 V, VGS = 0 V, TJ = 70 °C
-
-
-10
VDS  -5 V, VGS = -4.5 V
-5
-
0.026
RDS(on)
Forward Transconductance a
gfs
VGS = -4.5 V, ID = -1.5 A
-
0.022
VGS = -2.5 V, ID = -1.5 A
-
0.028
0.035
VGS = -1.8 V, ID = -1 A
-
0.040
0.055
VGS = -1.5 V, ID = -0.5 A
-
0.056
0.092
VDS = -6 V, ID = -1.5 A
-
10
-
μA
A

S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
tr
td(off)
-
-
380
-
VDS = -6 V, VGS = -10 V, ID = -1.5 A
-
43
65
-
21
32
VDS = -6 V, VGS = -4.5 V, ID = -1.5 A
-
2.1
-
-
4.8
-
VGS = -0.1 V, f = 1 MHz
-
2.2
-
-
20
40
-
25
50
VDD = -6 V, RL = 4 
ID  -1.5 A, VGEN = -4.5 V, Rg = 1 
-
40
80
-
10
20
td(on)
-
10
20
Rise Time
Turn-Off Delay Time
-
410
tf
Fall Time
Turn-On Delay Time
1840
-
td(on)
Rise Time
Turn-Off Delay Time
VDS = -6 V, VGS = 0 V, f = 1 MHz
tr
td(off)
Fall Time
VDD = -6 V, RL = 4 
ID  -1.5 A, VGEN = -10V, Rg = 1 
tf
pF
nC

ns
-
10
20
-
40
80
-
10
20
-
-
-10.8
-
-
-25
-
-0.8
-1.2
V
-
30
60
ns
-
12
25
nC
-
11.5
-
-
18.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = -1.5 A, VGS = 0
IF = -1.5 A, dI/dt = 100 A/μs, TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.


Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0932-Rev. C, 20-Apr-15
Document Number: 63553
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8483DB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
25
VGS = 5 V thru 2.5 V
8
VGS = 2 V
ID - Drain Current (A)
ID - Drain Current (A)
20
15
10
TC = 25 °C
6
4
TC = 125 °C
2
5
TC = - 55 °C
VGS = 1.5 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
0
3.0
0.5
1
1.5
2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.16
3000
VGS = 1.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2500
0.12
VGS = 1.8 V
0.08
VGS = 2.5 V
0.04
Ciss
2000
1500
1000
Coss
500
Crss
VGS = 4.5 V
0
0
0
5
10
15
ID - Drain Current (A)
20
25
0
3
On-Resistance vs. Drain Current and Gate Voltage
9
12
Capacitance
10
1.4
RDS(on) - On-Resistance (Normalized)
ID = 1.5 A
VDS = 6 V
VGS - Gate-to-Source Voltage (V)
6
VDS - Drain-to-Source Voltage (V)
8
VDS = 3 V
6
VDS = 9.6 V
4
2
0
0
10
20
30
40
50
1.3
VGS = 4.5 V, 2.5 V; ID = 1.5 A
1.2
VGS = 1.8 V; ID = 1.5 A
1.1
1.0
VGS = 1.5 V; ID = 0.5 A
0.9
0.8
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-0932-Rev. C, 20-Apr-15
150
Document Number: 63553
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8483DB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.14
100
0.12
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 1.5 A
TJ = 150 °C
10
TJ = 25 °C
1
0.10
0.08
0.06
TJ = 125 °C
0.04
0.02
0.1
TJ = 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source-Drain Diode Forward Voltage
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
0.9
30
0.8
25
0.7
0.6
0.5
Power (W)
VGS(th) (V)
20
ID = 250 μA
10
0.4
5
0.3
0.2
- 50
15
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
0.01
0.1
1
Pulse (s)
10
100
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s
DC
0.1
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0932-Rev. C, 20-Apr-15
Document Number: 63553
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8483DB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
24
12
Power Dissipation (W)
ID - Drain Current (A)
20
16
Package Limited
12
8
9
6
3
4
0
0
0
25
50
75
100
125
TC - Ambient Temperature (°C)
Current Derating*
150
25
50
75
100
125
150
T C - Case Temperature (°C)
Power Derating




* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when
this rating falls below the package limit.
S15-0932-Rev. C, 20-Apr-15
Document Number: 63553
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8483DB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P DM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case


















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63553.
S15-0932-Rev. C, 20-Apr-15
Document Number: 63553
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MICRO FOOT®: 6-Bump
(1.5 mm x 1 mm, 0.5 mm Pitch, 0.250 mm Bump Height)
S
S
S
G
e
XXXX
D
s
XXX
D
D
s
6x Ø b1
s
Mark on Backside of Die
e
e
s
E
6x Ø 0.24 to 0.26 (Note 3)
Solder mask ~ Ø 0.25
C
NOTE 5
b
A2
B
A1
A
e
A
e
K
e
Bump (Note 2)
Recommended Land Pattern
Notes
(unless otherwise specified)
1. Six (6) solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.510
0.575
0.590
0.0201
0.0226
0.0232
A1
0.220
0.250
0.280
0.0087
0.0098
0.0110
A2
0.290
0.300
0.310
0.0114
0.0118
0.0122
b
0.297
0.330
0.363
0.0116
0.0129
0.0143
b1
0.250
0.0098
e
0.500
0.0197
s
0.210
0.230
0.250
0.0082
0.0090
0.0098
D
0.920
0.960
1.000
0.0362
0.0378
0.0394
E
1.420
1.460
1.500
0.0559
0.0575
0.0591
K
0.028
0.065
0.102
0.0011
0.0025
0.0040
Note
• Use millimeters as the primary measurement.
ECN: T15-0140-Rev. A, 20-Apr-15
DWG: 6035
Revison: 20-Apr-15
Document Number: 69426
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
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Revision: 13-Jun-16
1
Document Number: 91000