v00.0504
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC471MS8G is a dual RF/IF
gain block & LO or PA driver:
+20 dBm P1dB Output Power
• Cellular / PCS / 3G
Output IP3: +34 dBm
• Fixed Wireless & WLAN
Supply (Vs): +6V to +12V
• CATV, Cable Modem & DBS
14.9 mm2 Ultra Small 8 Lead MSOP
• Microwave Radio & Test Equipment
20 dB Gain
General Description
The HMC471MS8G is a SiGe HBT Dual Channel
Gain Block MMIC SMT amplifier covering DC to
5 GHz. This versatile product contains two gain
blocks, packaged in a single 8 lead plastic MSOP,
for use as either separate cascadable 50 Ohm
RF/IF gain stages, LO or PA drivers or with both
amplifiers combined utilizing external 90° hybrids to
create a high linearity driver amplifier. Each amplifier
in the HMC471MS8G offers 20 dB of gain, +20dBm
P1dB with a +34 dBm output IP3 at 850 MHz while
requiring only 80 mA from a single positive supply.
The combined dual amplifier circuit delivers up to
+21 dBm P1dB with +36dBm OIP3 for specific
application bands through 4 GHz.
Functional Diagram
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C
Parameter
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 4.0 GHz
4.0 - 5.0 GHz
Min.
Typ.
18.5
15.5
13
10.5
8
21
17.5
15
12.5
10
0.008
12
14
8
13
9
7
5
20
19
17
14
12
10
34
32
27
25
22
3.25
4.0
16
14
11
9
7
Max.
0.012
80
Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier.
8 - 352
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
HMC471MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
Gain vs. Temperature
25
24
20
22
20
15
+25C
+85C
-40C
10
16
GAIN (dB)
RESPONSE (dB)
18
5
0
-5
14
12
10
8
-10
6
-15
S21
S11
S22
-20
4
2
-25
0
0
1
2
3
4
5
6
7
0
8
1
FREQUENCY (GHz)
4
5
6
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
0
INPUT RETURN LOSS (dB)
3
FREQUENCY (GHz)
Input Return Loss vs. Temperature
+25C
+85C
-40C
-5
-10
-15
-20
+25C
+85C
-40C
-5
-10
-15
-20
0
1
2
3
4
5
6
0
1
FREQUENCY (GHz)
2
3
4
5
6
5
6
FREQUENCY (GHz)
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
0
10
9
+25C
+85C
-40C
-5
+25C
+85C
-40C
8
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
2
AMPLIFIERS - SMT
Broadband Gain & Return Loss
-10
-15
-20
7
6
5
4
3
2
-25
1
-30
0
0
1
2
3
4
FREQUENCY (GHz)
5
6
0
1
2
3
4
FREQUENCY (GHz)
Data shown is of a single amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 353
HMC471MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
P1dB vs. Temperature
Psat vs. Temperature
22
24
20
22
18
20
16
18
14
Psat (dBm)
P1dB (dBm)
12
10
8
16
14
12
10
8
6
4
2
+25C
+85C
-40C
6
+25C
+85C
-40C
4
2
0
0
0
1
2
3
4
5
6
0
1
2
FREQUENCY (GHz)
40
OIP3 (dBm)
35
30
25
+25C
+85C
-40C
15
0
1
2
3
4
5
6
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 80 mA @ 850 MHz
Output IP3 vs. Temperature
20
3
FREQUENCY (GHz)
4
5
6
FREQUENCY (GHz)
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
AMPLIFIERS - SMT
8
36
34
32
30
28
26
24
22
20
18
Gain
P1dB
Psat
OIP3
16
14
12
6
7
8
9
10
11
12
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 51 Ohms
Cross Channel Isolation
0
90
+85C
88
-5
PATH ISOLATION (dB)
86
Icc (mA)
84
82
+25C
80
78
76
74
-40C
72
INPUT1-OUTPUT2
-15
INPUT2-OUTPUT1
-20
-25
-30
-35
-40
70
68
4.4
-10
-45
4.5
4.6
4.7
4.8
4.9
5
Vcc (Vdc)
5.1
5.2
5.3
5.4
1
2
3
4
5
6
FREQUENCY (GHz)
Data shown is of a single amplifier.
8 - 354
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7
8
HMC471MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
-5
+25C
+85C
-40C
INPUT RETURN LOSS
OUTPUT RETURN LOSS
-10
-15
-20
-25
-30
-35
-40
1
1.5
2
2.5
3
0
0.5
FREQUENCY (GHz)
1.5
2
2.5
3
2.4
2.6
2.4
2.6
FREQUENCY (GHz)
Reverse Isolation*
Output IP3*
40
0
-5
35
-10
OIP3 (dBm)
REVERSE ISOLATION (dB)
1
AMPLIFIERS - SMT
0
RETURN LOSS (dB)
GAIN (dB)
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
0.5
8
Input & Output Return Loss *
Gain*
-15
-20
-25
30
+25C
+85C
-40C
25
-30
-35
-40
0
0.5
1
1.5
2
2.5
20
1.4
3
1.6
FREQUENCY (GHz)
2.2
Output Psat*
24
24
22
22
20
20
Psat (dBm)
P1dB (dBm)
2
FREQUENCY (GHz)
Output P1dB*
18
16
18
16
+25C
+85C
-40C
14
12
1.4
1.8
1.6
1.8
2
+25C
+85C
-40C
14
2.2
FREQUENCY (GHz)
2.4
2.6
12
1.4
1.6
1.8
2
2.2
FREQUENCY (GHz)
* Measurements shown are of both channels with 1.5 - 2.5 GHz 90° splitter/combiners on input & output
(see application circuit for balanced operation).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 355
v00.0504
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
AMPLIFIERS - SMT
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFin)(Vcc = +4.2 Vdc)
+17 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 32.6 mW/°C above 85 °C)
2.12 W
Thermal Resistance
(junction to ground paddle)
30.7 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
%,%#42/34!4)#3%.3)4)6%$%6)#%
/"3%26%(!.$,).'02%#!54)/.3
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
8 - 356
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC471MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Pin Number
Function
Description
1
RFIN1
This pin is DC coupled.
An off chip DC blocking capacitor is required.
8
RFOUT1
RF output and DC Bias (Vcc1) for the output stage.
2, 3, 6, 7
N/C
No connection. These pins may be connected to RF ground.
Performance will not be affected.
4
RFIN2
This pin is DC coupled.
An off chip DC blocking capacitor is required.
5
RFOUT2
RF output and DC Bias (Vcc2) for the output stage.
Ground
Paddle
GND
Ground paddle must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - SMT
8
Pin Descriptions
8 - 357
HMC471MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Application Circuit for Balanced Operation
AMPLIFIERS - SMT
8
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
6V
8V
10V
12V
RBIAS VALUE
11 Ω
39 Ω
62 Ω
91 Ω
RBIAS POWER RATING
1/4 W
1/2 W
1/2 W
1W
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
8 - 358
50
900
1900
2200
2400
3500
5000
L1, L2
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
C4, C5, C9, C10
0.01 µF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC471MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 109185*
Item
Description
J1 - J4
PC Mount SMA Connector
J5 - J8
DC Pins
L1, L2
Inductor, 0402 Pkg.
C1, C8
2.2 µF Capacitor, Tantalum
C2, C7
1000 pF Capacitor, 0402 Pkg.
C3, C6
100 pF Capacitor, 0402 Pkg.
C4, C5, C9, C10
Capacitor, 0402 Pkg.
R1, R2
Resistor, 2010 Pkg.
U1
HMC471MS8G
PCB**
109162 Evaluation PCB
The circuit board used in the final application should use
RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown. A sufficient number of
VIA holes should be used to connect the top and bottom
ground planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 359