This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR2225 (UN2225), UNR2226 (UN2226),
UNR2227 (UN2227)
Silicon NPN epitaxial planar type
Unit: mm
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
2
1
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
(0.95) (0.95)
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1.9±0.1
(0.65)
■ Features
2.8+0.2
–0.3
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For muting
1.50+0.25
–0.05
3
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
600
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
ue
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
Parameter
ce
/D
isc
on
tin
1.1+0.3
–0.1
(R2)


6.8 kΩ
0 to 0.1
Marking Symbol (R1)
• UNR2225 (UN2225)
FZ
10 kΩ
• UNR2226 (UN2226)
FY
4.7 kΩ
• UNR2227 (UN2227)
FW
6.8 kΩ
1.1+0.2
–0.1
10˚
■ Resistance by Part Number
R1
C
B
R2
E
■ Electrical Characteristics Ta = 25°C ± 3°C
an
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VCBO
IC = 1 µA, IE = 0
30
V
VCEO
IC = 2 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 1 µA, IC = 0
5
Collector-base cutoff current (Emitter open)
ICBO
VCB = 30 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
Forward current
UNR2227
hFE
VCE = 10 V, IC = 100 mA
transfer ratio
UNR2225/2226
VCE(sat)
IC = 50 mA, IB = 2.5 mA
int
en
Collector-base voltage (Emitter open)
Ma
Collector-emitter voltage (Base open)
Collector-emitter saturation voltage
Input resistance
UNR2226
−30%
µA
600
4.7
80
mV
+30%
kΩ
1.2

6.8
UNR2225
UNR2227
1

100
R1
µA
70
UNR2227
Resistance ratio
V
1
10
R1/R2
0.8
1.0
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00040CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR2225/2226/2227
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Resistance ratio
Symbol
UNR2226
Conditions
Min
Typ
VI = 7 V, RL = 1 kΩ, f = 1 kHz
Ron
UNR2227
1.1
UNR2225
1.5
Transition frequency
VCB = 10 V, IE = −50 mA, f = 200 MHz
fT
Max
Unit
Ω
0.95
200
MHz
M
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Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Refer to Ron measurment circuit
RL
R1
VB VV
Common characteristics chart
PT  Ta
200
150
100
50
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR2225
en
an
IC  VCE
Collector current IC (mA)
Ma
int
400
300
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
200
0.6 mA
0.5 mA
0.4 mA
100
0.3 mA
0.2 mA
0.1 mA
0
0
2.5
5.0
7.5
10.0
Collector-emitter voltage VCE (V)
2
Collector-emitter saturation voltage VCE(sat) (mV)
ce
/D
isc
on
tin
0
Ron =
VB
× RL (Ω)
VA−VB
ue
Total power dissipation PT (mW)
250
VA
VCE(sat)  IC
1 000
hFE  IC
IC / IB = 10
100
Ta = 75°C
−25°C
10
25°C
1
250
VCE = 10 V
Forward current transfer ratio hFE
R2
VI
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f = 1 kHz
V = 0.3 V
200
Ta = 75°C
150
100
50
0
1
10
Collector current IC (mA)
SJH00040CED
100
25°C
−25°C
1
10
102
103
Collector current IC (mA)
104
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR2225/2226/2227
IO  VIN
105
VIN  IO
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
Input voltage VIN (V)
Output current IO (µA)
104
103
102
10
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Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
14
5
10
1
0.25
100
Collector current IC (mA)
0.8 mA
0.7 mA
0.6 mA
200
0.5 mA
0.4 mA
0.3 mA
100
0.2 mA
7.5
10.0
Collector-emitter voltage VCE (V)
an
Cob  VCB
f = 1 MHz
int
en
14
Ta = 75°C
25°C
−25°C
10
1
10
100
10
102
hFE  IC
Ta = 75°C
300
25°C
−25°C
200
100
0
1 000
VCE = 10 V
400
1
Collector current IC (mA)
102
10
103
104
Collector current IC (mA)
IO  VIN
105
1
500
IC / IB = 10
100
1
10−1
VIN  IO
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
104
Output current IO (µA)
Ma
10
1 000
ce
/D
isc
on
tin
0.1 mA
5.0
10−2
Output current IO (mA)
Forward current transfer ratio hFE
IB = 1.0 mA
0.9 mA
2.5
0.1
10−3
1.50
VCE(sat)  IC
300
0
1.25
ue
IC  VCE
400
0
1.00
Input voltage VIN (V)
Characteristics charts of UNR2226
Ta = 25°C
0.75
0.50
5
Input voltage VIN (V)
1
Collector-emitter saturation voltage VCE(sat) (mV)
1
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10
Collector-base voltage VCB (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
1
103
102
10
1
10
1
1
10
Collector-base voltage VCB (V)
100
1
0.25
0.50
0.75
1.00
1.25
Input voltage VIN (V)
SJH00040CED
1.50
0.1
10−3
10−2
10−1
1
10
102
Output current IO (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR2225/2226/2227
Characteristics charts of UNR2227
IC  VCE
VCE(sat)  IC
IB = 1.0 mA
300
0.9 mA
0.8 mA
0.7 mA
hFE  IC
300
IC / IB = 10
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (mV)
1 000
100
250
Ta = 75°C
200
25°C
M
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Collector current IC (mA)
400
0.6 mA
0.5 mA
0.4 mA
100
0.3 mA
0.2 mA
0.1 mA
0
0
2
4
6
10
Collector-emitter voltage VCE (V)
−25°C
10
1
−25°C
100
50
10
0
1 000
100
1
f = 1 MHz
102
10
103
104
Collector current IC (mA)
IO  VIN
VIN  IO
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
Output current IO (mA)
12
8
Input voltage VIN (V)
10
16
1
0.1
10
1
0.01
1
10
100
0.001
0.25
ue
4
Ma
int
en
an
Collector-base voltage VCB (V)
4
150
Collector current IC (mA)
100
20
0
25°C
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
Ta = 75°C
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200
0.50
0.75
1.00
1.25
Input voltage VIN (V)
SJH00040CED
1.50
0.1
10−3
10−2
10−1
1
10
Output current IO (mA)
102
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
d
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on es
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
en
an
ce
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.