Freescale Semiconductor
Technical Data
Document Number: MRF374A
Rev. 5, 5/2006
RF Power Field--Effect Transistor
MRF374A
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large--signal, common source amplifier applications
in 28/32 volt transmitter equipment.
• Typical Two--Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 130 Watts PEP
Power Gain — 17.3 dB
Efficiency — 41%
IMD — --32.5 dBc
• Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW
Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Differential Large--Signal Impedance Parameters
• RoHS Compliant
470--860 MHz, 130 W, 32 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F--04, STYLE 1
NI--650
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
302
1.72
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.58
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFET
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M2 (Minimum)
MRF374A
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
70
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage (2)
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.41
0.45
Vdc
Input Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
—
97.3
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
—
49
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
—
1.91
—
pF
Characteristic
Off
Characteristics (1)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 μA)
Dynamic Characteristics (1)
Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17.3
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
36
41.2
—
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
--32.5
--28
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
On Characteristics
MRF374A
2
RF Device Data
Freescale Semiconductor
MRF374 Rev 3a
C7A
R3A
L3A
L2A
VDD
C13A
R2
R4A
L4
C2
RF INPUT
R1A
C4A
C5
C3
R1B
ARCHIVE INFORMATION
L2B
C7B
R3B
VGS
C12A
RF OUTPUT
C11
C10
C9B
R4B
L3B
C14A
C9A
C6
C4B
C1
L1A
L1B
C12B
C14B
C13B
VDD
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 860 MHz Balun
Rogers RO3010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil ”tab”
fits into the main PCB “slot” resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
ARCHIVE INFORMATION
VGS
Figure 1. MRF374A Narrowband Test Circuit Component Layout
MRF374A
RF Device Data
Freescale Semiconductor
3
Table 5. MRF374A Narrowband Test Circuit Component Layout Designations and Values
Description
C1
0.8 pF Chip Capacitor, ATC
C2
2.2 pF Chip Capacitor, ATC
C3
0.5 -- 5.0 pF Variable Capacitor, Johanson Gigatrim
C4A, B, C12A, B
47 pF Chip Capacitors, ATC
C5
1.0 pF Chip Capacitor, ATC
C6
10 pF Chip Capacitor, ATC
C7A, B, C14A, B
100,000 pF Chip Capacitors, ATC
C9A, B
15 pF Chip Capacitors, ATC
C10
3.9 pF Chip Capacitor, ATC
C11
5.1 pF Chip Capacitor, ATC
C13A, B
2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT
L1A, B
5.0 nH, Coilcraft #A02T
L2A, B
8.0 nH, Coilcraft #A03T
L3A, B
130.0 nH, Coilcraft #132--11SMJ
L4
8.8 nH, Coilcraft #1606--8
R1A, B
51 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R2
10 Ω, 1/2 W Chip Resistor, Vishay Dale (2010)
R3A, B
3.3 kΩ, 1/8 W Chip Resistors, Vishay Dale (1206)
R4A, B
180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
PCB
MRF374 Printed Circuit Board Rev 03, Rogers RO4350,
Height 30 mils, εr = 3.48
Balun B1A, B
Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01,
Rogers RO3010, Height 50 mils, εr = 10.2
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Designation
MRF374A
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 32 Vdc
28 Vdc
16.5
16
Pout = 100 W (PEP)
IDQ = 750 mA
nFrequency = 6 MHz
15
400
500
600
700
800
900
--40
32 Vdc
--45
--50
400
500
600
700
800
Figure 3. Intermodulation Distortion versus
Frequency in Broadband Circuit
20
G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
35
VDD = 28 Vdc
32 Vdc
25
20
400
500
40
Gps
Pout = 100 W (PEP)
IDQ = 750 mA
nFrequency = 6 MHz
30
600
700
35
VDD = 32 Vdc
Pout = 100 W (PEP)
IDQ = 750 mA
nFrequency = 6 MHz
10
D
500
15
Ciss
10
Coss
5
Crss
0
30
40
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Voltage
0
60
C rss , Capacitance (pF)
150
20
700
800
20
900
Figure 5. Performance in Broadband Circuit
20
10
600
f, FREQUENCY (MHz)
200
50
25
IRL
f, FREQUENCY (MHz)
100
30
η
5
0
400
900
800
15
Figure 4. Drain Efficiency versus Frequency
in Broadband Circuit
0
900
f, FREQUENCY (MHz)
Figure 2. Gain versus Frequency
in Broadband Circuit
40
η, DRAIN EFFICIENCY (%)
--35
f, FREQUENCY (MHz)
45
C oss , C iss , Capacitance (pF)
VDD = 28 Vdc
--30
40
--20
VDD = 32 Vdc
IDQ = 1.1 A
f = 860 MHz
2 K Mode COFDM
64 QAM
10.5 Peak/Avg. Ratio
35
30
25
20
--25
--30
--35
--40
Gps
IMR
15
--45
10
--50
5
--55
η
0
0.1
1
10
IMR, INTERMODULATION (dBc)
ARCHIVE INFORMATION
15.5
--25
η , DRAIN EFFICIENCY (%)
D
17
Pout = 100 W (PEP)
IDQ = 750 mA
nFrequency = 6 MHz
--20
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
17.5
--15
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
18
--60
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. COFDM Intermodulation, Gain and Efficiency
versus Output Power in Broadband Circuit
MRF374A
RF Device Data
Freescale Semiconductor
5
19
35
--25
18
30
--30
25
--35
20
Gps
--40
15
IMR
--45
10
5
VDD = 32 Vdc
IDQ = 1.1 A
f = 860 MHz
η
0
0.1
1
10
--50
--55
G ps , POWER GAIN (dB)
--20
IMR, INTERMODULATION (dBc)
40
IDQ = 1.0 A
800 mA
17
600 mA
16
400 mA
15
200 mA
VDD = 32 Vdc
f = 857 MHz
nFrequency = 6 MHz
14
13
--60
100
1
Figure 8. 8--VSB Intermodulation, Gain and Efficiency
versus Output Power in Broadband Circuit
100
Figure 9. Power Gain versus Peak Output Power
in Narrowband Circuit
--20
50
IDQ = 200 mA
--25
--30
400 mA
--35
600 mA
--40
--45
800 mA
--50
1.0 A
--55
1
VDD = 32 Vdc
f = 857 MHz
nFrequency = 6 MHz
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 10. Intermodulation Distortion versus
Peak Output Power in Narrowband Circuit
η , DRAIN EFFICIENCY (%)
D
IMD, INTERMODULATION DISTORTION (dBc)
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
40
30
20
VDD = 32 Vdc
IDQ = 800 mA
f = 857 MHz
nFrequency = 6 MHz
10
0
1
100
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 11. Drain Efficiency versus Peak Output Power
in Narrowband Circuit
ARCHIVE INFORMATION
ARCHIVE INFORMATION
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
MRF374A
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc
VDD = 32 Vdc
18
18
560 MHz
16.5
760 MHz
16
660 MHz
860 MHz
15.5
G ps , POWER GAIN (dB)
470 MHz
17
VDD = 32 Vdc
IDQ = 750 mA
Tone Spacing = 6 MHz
17.5
470 MHz
17
560 MHz
16.5
760 MHz
660 MHz
860 MHz
16
15.5
15
15
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
1
Figure 12. Power Gain versus Peak Output Power
in Broadband Circuit
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 13. Power Gain versus Peak Output Power
in Broadband Circuit
45
VDD = 28 Vdc
IDQ = 750 mA
Tone Spacing = 6 MHz
860 MHz
560 MHz
660 MHz
470 MHz
25
15
VDD = 32 Vdc
IDQ = 750 mA
Tone Spacing = 6 MHz
40
η, DRAIN EFFICIENCY (%)
35
η, DRAIN EFFICIENCY (%)
860 MHz
30
560 MHz
660 MHz
470 MHz
20
10
5
0
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
1
IMD, INTERMODULATION DISTORTION (dBc)
Figure 14. Drain Efficiency versus Peak Output Power
in Broadband Circuit
--25
VDD = 28 Vdc
IDQ = 750 mA
Tone Spacing = 6 MHz
--30
660 MHz
--35
860 MHz
560 MHz
760 MHz
--40
470 MHz
--45
--50
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 16. Intermodulation Distortion versus
Peak Output Power in Broadband Circuit
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 15. Drain Efficiency versus Peak Output Power
in Broadband Circuit
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
G ps , POWER GAIN (dB)
17.5
ARCHIVE INFORMATION
VDD = 28 Vdc
IDQ = 750 mA
Tone Spacing = 6 MHz
--25
VDD = 32 Vdc
IDQ = 750 mA
Tone Spacing = 6 MHz
--30
660 MHz
560 MHz
860 MHz
--35
--40
760 MHz
--45
470 MHz
--50
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 17. Intermodulation Distortion versus
Peak Output Power in Broadband Circuit
MRF374A
RF Device Data
Freescale Semiconductor
7
Zo = 4 Ω
f = 845 MHz
f = 845 MHz
Zload
Zsource
f = 875 MHz
VDD = 32 V, IDQ = 400 mA, Pout = 130 W PEP
f
MHz
Zsource
Ω
Zload
Ω
845
3.33 -- j2.42
4.56 -- j2.86
860
3.03 -- j2.39
4.22 -- j3.16
875
2.73 -- j3.10
3.87 -- j3.52
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 875 MHz
Output
Matching
Network
+
Z
load
Figure 18. Series Equivalent Source and Load Impedance
MRF374A
8
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF374A
RF Device Data
Freescale Semiconductor
9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF374A
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
M
T A
M
B
G
M
D
Q
bbb
2X
bbb
M
T A
M
B
M
L
S (INSULATOR)
M
T A
K
2
3
4
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
B
1
M
(FLANGE)
4 PL
B
R (LID)
ARCHIVE INFORMATION
ccc
M
T A
M
B
M
N (LID)
ccc
M
T A
M
B
M
M (INSULATOR)
bbb
M
T A
M
B
M
F
C
5
E
H
A
A
T
SEATING
PLANE
(FLANGE)
CASE 375F--04
ISSUE E
NI--650
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
1.135
1.145
0.225
0.235
0.135
0.178
0.210
0.220
0.055
0.065
0.004
0.006
0.900 BSC
0.077
0.087
0.220
0.250
0.260 BSC
0.643
0.657
0.638
0.650
.125
.135
0.227
0.233
0.225
0.235
0.010 BSC
0.015 BSC
STYLE 1:
PIN 1.
2.
3.
4.
5.
DRAIN
DRAIN
GATE
GATE
SOURCE
MILLIMETERS
MIN
MAX
28.80
29.10
5.72
5.97
3.43
4.52
5.33
5.59
1.40
1.65
0.11
0.15
22.86 BSC
1.96
2.21
5.59
6.35
6.60 BSC
16.33
16.69
16.20
16.50
3.175
3.43
5.77
5.92
5.715
5.97
0.254 BSC
0.381 BSC
ARCHIVE INFORMATION
bbb
MRF374A
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006, 2010. All rights reserved.
MRF374A
Document Number: MRF374A
Rev. 5, 5/2006
12
RF Device Data
Freescale Semiconductor