Silicon Carbide Power
High performance, ultimate reliability.
However tough the environment…
Flexible • Innovative • Trusted
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Silicon Carbide Power
Courtesy of EF
Silicon Carbide Power
03
High Temperature, High Reliability SiC Range
Semelab brings together the unique attributes of Silicon Carbide and the
advanced capability of Semelab packaging technologies to offer unprecedented
performance and reliability. The products below are all designed for high
reliability, high temperature operation. All are available with various levels of
screening and qualification as required.
TT electronics Semelab
TT electronics Semelab manufacture ultra reliable high
performance semiconductor solutions designed to
operate in any environment.
We are experts in custom packaging and screening,
servicing focused aerospace, military, RF, audio and
industrial markets.
At Semelab, we research, design, manufacture and
distribute an innovative range of semiconductor
products throughout the world.
Our R&D teams have an excellent track record for
developing imaginative electronic solutions and our
design engineers have created a wealth of high
performance products. Our manufacturing
divisions have ensured supreme quality and reliability.
And our sales teams and distribution partners have
opened international markets to some of the best
electronics solutions available.
Shortform / Datasheets:
Part No.
Description
Voltage Current Package
SML05SC06D3A
Ultra Fast Recovery Power Rectifier
600V
5A
DLCC-3
SML010FBDH06
Silicon Carbide Power Schottky Rectifier Diode Bridge
600V
10A
TO258-D
SML10SIC06YC
Silicon Carbide Schottky Rectifier
600V
10A
TO257-AA
SML020DH12
Silicon Carbide Schottky Rectifier
1200V
20A
TO258-AA
SML100M12MSF
Normally-off Silicon Carbide Power Jfet
1200V
24A
TO258-AA
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Silicon Carbide Power
Silicon Carbide Power
Schottky Rectifier Diode Bridge
SML010FBDH06
Features
• 600V, 10A Full Bridge Rectifier Configuration
• High Temperature Operation Tj = 200°C
• Effective Zero Reverse and Forward Recovery
• High Speed Low Loss Switching
• High Frequency Operation
• High-Reliability Screening Options Available
Key Markets
• Space
• Defence & Civil Aviation
• Down-hole Drilling
Applications
• Motor Drives
• UPS
• Induction Heating
• SMPS
Silicon Carbide Power
05
Absolute Maximum Ratings (Per Die, Tc = 25°C unless otherwise stated)
VRRM
Repetitive Peak Reverse Breakdown Voltage
600V
VRSM
Surge Peak Reverse Voltage
600V
VDC
DC Blocking Voltage
600V
IF(AVG)
Average Forward Current
10A
IFSM
Non Repetitive Peak Forward Surge Current, tp = 10μs
45A
TJ
Junction Temperature Range
-55 to +200°C
Tstg
Storage Temperature Range
-55 to +225°C
Thermal Properties (Per Die)
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
2.0
°C/W
Electrical Characteristics (Per Die, Tc = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
IF = 10A
(1)
Forward Voltage
VF
Tc = 175°C Max.
Units
1.8
2.2
2.0
2.7
VR = VRRM 10
IR
Reverse Current
Tc = 175°C 100
1000
V
μA
Dynamic Charactersitics
Symbols
QC
Parameters
Test Conditions Total Capacitative
IF = 10A
di/dt = 500A/μs
Charge
Min.
VR = 600V
TJ = 25°C Typ.
32
Max.
Units
nC
Mechanical Data Dimensions in mm (Inches)
TO258D (MO-078AA)
PIN 1
PIN 2
PIN 3
PIN 4
PIN 5
- Rectified DC
+ AC
N/C
- AC
+ Rectified DC
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Silicon Carbide Power
Ultra Fast Recovery
Power Rectifier
SML05SC06D3A
SML05SC06D3B
Features
• VR(max) = 600V
• IF(avg) = 5A
• VF(typ) = 1.5V
• DLCC3 Hermetic Ceramic Surface Mount
Package Designed as a Drop In Replacement
for “D-5B”/ ”E-MELF” Package †
• No Reverse Recovery
• No Forward Recovery
• High-Reliability Screening Options Available
Applications
• Down-Hole High Temperature
• Space Level Screened Parts
• Aerospace Engines and Nacelles
Silicon Carbide Power
07
Absolute Maximum Ratings (TA = 25°C unless otherwise stated)
VRRM
Peak Repetitive Reverse Voltage 600V
VRSM
Surge Peak Reverse Voltage 600V
IF(AVG)
Average Forward Current 5A
IFRM
Repetitive Peak Forward Current 43A
IFMAX
Non-Repetitive Peak Forward Current 25A
PD
Total Power Dissipation at
TA = 25°C
TBA
Derate Above TA = 25°C
TBA
TJ
Junction Temperature Range
-55 to +175°C
Tstg
Storage Temperature Range -55 to +175°C
Thermal Properties
Symbols
Parameters
Max.
Units
RθJA (PCB)(1)
Thermal Resistance, Junction To Ambient, On PCB
TBA
°C/W
RθJSP
Thermal Resistance, Junction To Solder Pads, TSP = 25°C
TBA
°C/W
Electrical Characteristics (TA = 25°C unless otherwise stated)
Symbols
Parameters
(1)
Diode Forward Voltage
VF
IR
Leakage Current
Test Conditions
Min.
IF = 5A
IF = 5A
VR = 600V
VR = 600V
Typ.
Max.
Units
Tc = 25°C
Tc = 175°C 1.5
1.8
2.0
2.4
Tc = 25°C
50
200
Tc = 175°C 100
1000
Typ.
Max.
V
μA
Dynamic Charactersitics
Symbols
Parameters
QC
Total Capacitative Charge
C
T
Junction Capacitance
(f = 1.0MHz)
Test Conditions Min.
VR = 600V
IF = 5A
di/dt = 500A/μs
VR = 0V
TJ = 25°C TJ = 25°C
VR = 200V
TJ = 25°C
TJ = 25°C
VR = 400V
28
Units
nC
550
65
pF
50
Mechanical Data
DLCC3 Variant A (D3A)
PIN 1
PIN 2
Anode
Cathode
DLCC3 Variant B (D3B)
PIN 1
PIN 2
PIN 2
Dimensions
A
B
C
D
Anode
Cathode
LID Contact to Cathode
mm
7.00 ±0.10
3.75 ±0.10
1.60 ±0.10
1.76 ±0.10
inches
0.275 ±0.004
0.143 ±0.004
0.063 ±0.004
0.069 ±0.004
08
Silicon Carbide Power
Silicon Carbide Power
Schottky Diode
SML10SIC06YC
Features
• Semelab’s Silicon Carbide (SIC) Schottky
diodes exhibit low forward voltage and
superb high temperature performance
• Suitable for high-frequency hard switching applications, where system efficiency and
reliability are paramount
• No reverse recovery time due to
absence of minority carrier injection
Key Markets
• Space
• Defence & Civil Aviation
• Down-hole Drilling
Applications
• Motor Drives
• UPS
• Induction Heating
• SMPS
Silicon Carbide Power
09
Absolute Maximum Ratings (TJ = 25°C unless otherwise stated)
VR
DC Reverse Voltage 600V
VRRM
IF
Repetitive Peak Reverse Voltage
600V
DC Forward Current (TJ = 175°C)
10A
IFRM
Repetitive Peak Forward Current (1)
67A
IFSM
Surge Peak Forward Current (2)
250A
PD
Total Power Dissipation at
100W
Derate Above 25°C
0.5 W/°C
TJ
Junction Temperature Range
-55 to +225°C
Tstg
Storage Temperature Range
-55 to +225°C
Thermal Properties (Per Die)
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
2.0
°C/W
Electrical Characteristics (Per Die, Tc = 25°C unless otherwise stated)
Symbols
Parameters
Max.
Units
IF = 10A
Test Conditions
1.5
1.8
Tc = 175°C 2.0
2.4
VR = 600V IR
Reverse Current
TJ = 175°C 10
50
20
200
Typ.
Max.
VF
Forward Voltage
Min.
Typ.
V
μA
Dynamic Charactersitics
Symbols
Parameters
QC
Total Capacitative Charge
C
Total Capacitance
Test Conditions Min.
VR = 600V
IF = 10A
δi/δt = 500A/μs 25
VR = 1V
VR = 200V
f = 1MHz
480
f = 1MHz 50
VR = 400V
f = 1MHz
42
Units
nC
pF
Mechanical Data Dimensions in mm (Inches)
TO-257AA
PIN 1
PIN 2
PIN 3
Anode 1
Case / Common Cathode
Anode 2
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Silicon Carbide Power
Silicon Carbide Power
Schottky Rectifier Diode
SML020DH12
Features
• 1200V, 20A (2x10A) Rectifier Diodes
• High Temperature Operation Tj = 200°C
• Effective Zero Reverse and Forward Recovery
• High Frequency Operation
• High Speed Low Loss Switching
Key Markets
• Space
• Defence & Civil Aviation
• Down-hole Drilling
Applications
• Motor Drives
• UPS
• Induction Heating
• SMPS
Silicon Carbide Power
11
Absolute Maximum Ratings (Tc = 25°C unless otherwise stated)
VRRM
Repetitive Peak Reverse Breakdown Voltage
1200V
VRSM
Surge Peak Reverse Voltage
1200V
VDC
DC Blocking Voltage
1200V
IF(AVG)
Average Forward Current
20A
IF(PEAK)
Peak Forward Surge Current, Tc = 125°C
50A
PD
Power Dissipation (per leg)
116W
TJ
Junction Temperature Range
-55 to +200°C
Tstg
Storage Temperature Range
-55 to +225°C
Thermal Properties
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
1.5
°C/W
Electrical Characteristics (Per Die, Tc = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
IF = 10A
(1)
Forward Voltage
VF
Tc = 175°C 1.6
1.8
2.5
3.0
VR = VRRM IR
Reverse Current
Tc = 175°C 10
200
20
1000
Typ.
Max.
V
μA
Dynamic Charactersitics
Symbols
QC
Parameters
Test Conditions Total Capacitative
IF = 10A
di/dt = 500A/μs
Charge
Min.
VR = 1200V
TJ = 25°C 61
Units
nC
Mechanical Data Dimensions in mm (Inches)
TO258 (TO-258AA)
PIN 1
PIN 2
PIN 3
Anode
Cathode
Anode
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12
Silicon Carbide Power
Normally-Off Silicon
Carbide Power JFET
SML100M12MSF
Features
• RDS(on)max of 0.100
• High Temperature Operation Tj = 200°C
• Low Gate Charge and Intrinsic Capacitance
• Positive Temperature Coefficient and Temperature
• Independent Switching Behaviour
Key Markets
• Space
• Defence & Civil Aviation
• Down-hole Drilling
Applications
• Motor Drives
• UPS
• Induction Heating
• SMPS
Courtesy of EF
Silicon Carbide Power
13
Absolute Maximum Ratings (Tc = 25°C unless otherwise stated)
VDS
Drain-Source Blocking Voltage
1200 V
RDS(on)max
Drain-Source On-resistance
0.1W
ID
Available Drain Current
24 A
IDM
Pulsed Drain Current
34 A
PD
Power Dissipation
70 W
VGS
DC Gate-Source Voltage
-15 to +3 V
TJ
Operating Temperature
-55 to +200 °C
TJstg
Storage Temperature -
55 to +225 °C
Thermal Properties (Per Die)
Symbols
Parameters Min.
Min.
RθJC
Thermal Resistance, Junction To Case, TC = 25°C
Typ.
Max.
Units
1.8
2.5
°C/W
Typ.
Max.
Units
Electrical Characteristics (Per Die, Tc = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
BVDSS
Drain-Source Blocking Voltage
VGS = 0V, ID = 1.0mA
1200
IDS
Drain-Source Leakage Current
VGS(th)
Gate Threshold Voltage
IGSS
Gate-Source Leakage Current
Drain-Source On-resistance
RDS(on)(1)
VDS = 1200V, VGS = 0V
1.0
VDS = 1200V, VGS = -5V 0.11
VDS = 1.0V, ID = 34mA
1.00
1.25
VGS = 2.4V
0.25
1.0
VGS = -15V 0.1
1.0
ID = 13A, VGS = 3V, TJ = 25°C ID = 13A, VGS = 3V, TJ = 175°C
0.09
0.1
0.70
0.29
Qg
Total Gate Charge
VDS = 600V, ID = 13A,
28
Qgs
Gate-Source Charge
VGS = 0V to +3V
9.3
ton
toff
Turn-on Delay (Resistive Load)
mA
V
mA
W
nC
20
VDS = 600V, ID = 13A,
CBP = 33nF, RCL = 110W
Rise time (Resistive Load)
70
Input Capacitance
642
Coss
Output Capacitance
69
Crss
Reverse Transfer Capacitance
tr
Ciss
Turn-off Delay ns (Resistive Load)
V
VDS = 100V
30
ns
pF
68
Mechanical Data Dimensions in mm (Inches)
TO258 (TO-258AA)
PIN 1
PIN 2
PIN 3
Gate
Source
Drain
Flexible • Innovative • Trusted
14
Silicon Carbide Power
Silicon Carbide Power
High performance, ultimate reliability
However tough the environment…
Silicon Carbide Power
15
Flexible • Innovative • Trusted
Flexible • Innovative • Trusted
Specialists in
•
•
•
•
•
•
Ceramic surface mount products
Hermetic metal packaged devices
Hermetic power modules
Standard and custom products
Screening and qualification
Continued supply of legacy device types and packages
Semelab holds approvals for many aerospace semiconductor
devices, and can manufacture in accordance with CECC,
mil19500, ESAlevel 5000 and other major process flows.
Please let us know your requirements.
Semelab Limited Coventry Road, Lutterworth, Leicestershire. LE17 4JB, UK
Tel: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612
www.semelab-tt.com Email: sales@semelab-tt.com
A subsidiary of TT electronics plc.