VS-85EPF12 Soft Recovery Series
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 85 A
FEATURES
• 150 °C max. operating junction temperature
Cathode
Anode
• Output rectification and freewheeling
inverters, choppers and converters
in
• Input rectifications where severe restrictions
on conducted EMI should be met
• Screw mounting only
PowerTab®
• Designed and qualified according to JEDEC-JESD47
• PowerTab® package
PRODUCT SUMMARY
Package
PowerTab®
IF(AV)
85 A
VR
1200 V
VF at IF
1.36 V
IFSM
110 A
trr
95 ns
TJ max.
150 °C
Diode variation
Single die
Snap factor
0.5
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-85EPF12 fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Available in the new PowerTab® package, this new series is
suitable for a large range of applications combining
excellent die to footprint ratio and sturdeness connectivity
for use in high current environments.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
Rect. conduction 50 % duty cycle at TC = 85 °C
IF(RMS)
VRRM
UNITS
85
A
160
Range
IFSM
VF
100 A, TJ = 25 °C
trr
1 A, - 100 A/μs
TJ
Range
1200
V
110
A
1.4
V
95
ns
- 40 to 150
°C
VOLTAGE RATINGS
TYPE NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
1200
1300
15
VS-85EPF12
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
Revision: 17-Jun-11
TEST CONDITIONS
TC = 85 °C, 180° conduction half sine wave
VALUES
10 ms sine pulse, rated VRRM applied
1100
10 ms sine pulse, no voltage reapplied
1250
10 ms sine pulse, rated VRRM applied
5000
10 ms sine pulse, no voltage reapplied
7000
t = 0.1 ms to 10 ms, no voltage reapplied
UNITS
85
70 000
A
A2s
A2s
Document Number: 93159
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VS-85EPF12 Soft Recovery Series
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ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
85 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VR = Rated VRRM
TJ = 150 °C
UNITS
1.36
V
4.03
m
0.87
V
0.1
mA
15
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
TEST CONDITIONS
IF at 85 Apk
25 A/μs
25 °C
S
VALUES
UNITS
480
ns
7.1
A
2.1
μC
IFM
trr
ta
tb
dir
dt
t
Qrr
0.5
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
Revision: 17-Jun-11
UNITS
- 40 to 150
°C
0.35
°C/W
40
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
minimum
maximum
0.2
6
g
0.21
oz.
6 (5)
kgf · cm
(lbf · in)
12 (10)
Case style PowerTab®
85EPF12
Document Number: 93159
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VS-85EPF12 Soft Recovery Series
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Vishay Semiconductors
150
200
140
130
Ø
Conduction angle
120
110
100
90
90°
60°
80
30°
180°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
RthJC (DC) = 0.35 K/W
160
140
120
80
60
Ø
120°
40
Conduction period
20
TJ = 150 °C
0
0
10
20
30
40
50
60
70
80
0
90
Average Forward Current (A)
93159_01
20
40
80
60
100
120
140
Average Forward Current (A)
93159_04
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
1200
RthJC (DC) = 0.35 °C/W
130
Ø
120
Conduction period
110
100
DC
90
60°
1000
900
800
700
600
500
120°
80
180°
30°
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1100
140
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
RMS limit
100
70
400
90°
300
70
0
20
40
60
80
100
120
1
140
Average Forward Current (A)
93159_02
93159_05
Fig. 2 - Current Rating Characteristics
160
140
120
1300
1200
100
RMS limit
80
60
40
Ø
Conduction angle
20
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
93159_03
Fig. 3 - Forward Power Loss Characteristics
Revision: 17-Jun-11
100
1100
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
1000
900
800
700
600
500
400
TJ = 150 °C
0
0
10
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1400
180°
120°
90°
60°
30°
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
DC
180°
120°
90°
60°
30°
180
300
0.01
93159_06
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93159
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Vishay Semiconductors
Instantaneous Forward Current (A)
1000
4.0
TJ = 25 °C
IFM = 125 A
Qrr - Maximum Reverse
Recovery Charge (μC)
3.5
100
TJ = 150 °C
TJ = 25 °C
10
IFM = 80 A
IFM = 40 A
3.0
2.5
2.0
IFM = 20 A
1.5
IFM = 10 A
1.0
0.5
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4.5
Instantaneous Forward Voltage (V)
93159_07
trr - Maximum Reverse
Recovery Time (μs)
0.18
IFM = 40 A
0.16
0.14
IFM = 20 A
0.12
IFM = 10 A
0.10
0.08
12
10
IFM = 40 A
8
6
IFM = 20 A
4
IFM = 10 A
IFM = 1 A
IFM = 1 A
0.04
0
0
40
80
120
160
0
200
dI/dt - Rate of Fall of Forward Current (A/μs)
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/μs)
93159_11
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.6
22
TJ = 150 °C
IFM = 80 A
0.4
IFM = 40 A
0.3
IFM = 20 A
0.2
IFM = 10 A
0.1
IFM = 125 A
TJ = 25 °C
20
0.5
18
Irr - Maximum Reverse
Recovery Current (A)
trr - Maximum Reverse
Recovery Time (μs)
200
IFM = 80 A
2
TJ = 25 °C
160
TJ = 150 °C
IFM = 80 A
0.20
IFM = 80 A
IFM = 40 A
16
14
IFM = 20 A
12
10
IFM = 10 A
8
6
4
IFM = 1 A
IFM = 1 A
2
0
0
0
93159_09
120
14
IFM = 125 A
0.06
80
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Qrr - Maximum Reverse
Recovery Charge (μC)
0.22
40
dI/dt - Rate of Fall of Forward Current (A/μs)
93159_10
Fig. 7 - Forward Voltage Drop Characteristics
93159_08
IFM = 1 A
0
40
80
120
160
dI/dt - Rate of Fall of Forward Current (A/μs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Revision: 17-Jun-11
0
200
93159_12
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/μs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Document Number: 93159
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VS-85EPF12 Soft Recovery Series
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Vishay Semiconductors
45
TJ = 150 °C
Irr - Maximum Reverse
Recovery Current (A)
40
IFM = 80 A
35
IFM = 40 A
30
IFM = 20 A
25
20
IFM = 10 A
15
10
IFM = 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/μs)
93159_13
ZthJC - Thermal Impedance (K/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.01
0.0001
93519_14
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 17-Jun-11
Document Number: 93159
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VS-85EPF12 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
85
E
P
F
12
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
Circuit configuration:
E = Single diode
4
-
Package:
P = TO-247AC
5
-
Type of silicon:
F = Fast recovery
6
-
Voltage code x 100 = VRRM (12 = 1200 V)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95240
Part marking information
www.vishay.com/doc?95370
Application note
www.vishay.com/doc?95179
Revision: 17-Jun-11
Document Number: 93159
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Outline Dimensions
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Vishay Semiconductors
PowerTab®
15.90 (0.62)
15.60 (0.61)
1.35 (0.05)
1.20 (0.04)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
4.95 (0.19)
4.75 (0.18)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
5.20 (0.20)
4.95 (0.19)
Lead 2
3.09 (0.12)
3.00 (0.11)
5.45 REF.
(0.21 REF.)
0.60 (0.02)
0.40 (0.01)
39.8 (1.56)
39.6 (1.55)
12.10 (0.47)
12.40 (0.48)
Lead 1
27.65 (1.08)
27.25 (1.07)
15.60 (0.61)
14.80 (0.58)
18.25 (0.71)
18.00 (0.70)
4.20 (0.16)
4.00 (0.15)
8.45 (0.33)
8.20 (0.32)
DIMENSIONS in millimeters (inches)
1.30 (0.05)
1.10 (0.04)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Revision: 03-Aug-11
Document Number: 95240
1
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Document Number: 91000
Revision: 11-Mar-11
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