Corporate Presentation
Q3 2013
CERN, Meyrin
4-Oct-2013
October 2013
Franz Riedlberger
Vision
To be the world leader in specialty foundry solutions as measured by our
customers, employees and investors
Mission
To bring to market specialty foundry solutions that provide unique value to
our customers by attentively listening to and proactively providing for their
needs, through attracting and retaining the best global talent to serve them
Values





2
Embrace a customer centric mentality
Knowledge, skills and attitude, focused on collaboration and innovation
Data driven and results oriented
Foster a culture built on mutual trust and respect
Demand quality and excellence in everything we do
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Information herein is proprietary and shall not be furnished to third parties or made public
Your Champion for Specialty Solutions
Sophisticated specialty
technology and design
enablement matching
that of a captive IDM
Manufacturing & service
metrics of a pure-play
Foundry
TowerJazz confidential
3
Information herein is proprietary and shall not be furnished to third parties or made public
Total 8˝ Equivalent Capacity of ≈1.7M WPY
4
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Information herein is proprietary and shall not be furnished to third parties or made public
Delivered Strong Annual Growth 2005-2012
700
639
611
600
509
500
$M
400
299
300
231
187
200
100
252
102
0
2005
2006
2007
2008
2009
2010
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
2011
2012
6
Foundry Landscape 2008-2012
2008
($M)
2009
2010
2011
2012
1
TSMC
10,556
TSMC
,8989
TSMC
13,307
TSMC
14,700
TSMC
17,130
2
UMC
3,070
UMC
2,815
UMC
3,965
UMC
3,790
GlobalFoundries
4,200
3
Chartered
1,743
GlobalFoundries
2,641
GlobalFoundries
3,510
GlobalFoundries
3,690
UMC
3,602
4
SMIC
1,353
SMIC
1,070
SMIC
1,555
SMIC
1,320
SMIC
1,702
5
Vanguard
511
Dongbu
395
TowerJazz
509
TowerJazz
611
TowerJazz
639
6
Dongbu
490
Vanguard
382
Vanguard
505
Vanguard
545
HHNEC/Grace
630
7
X-Fab
368
TowerJazz
299
Dongbu
495
Dongbu
500
Vanguard
582
8
SSMC
340
SSMC
280
SSMC
330
HHNEC
390
Dongbu
540
9
HHNEC
290
HHNEC
240
X-Fab
320
SSMC
340
WIN
382
10
TowerJazz
252
X-Fab
212
HHNEC
295
WIN
310
SSMC
370
11
Grace
230
He Jian
180
Grace
260
X-FAB
290
X-FAB
260
12
He Jian
195
Silterra
170
WIN
221
GRACE
280
Altis
228
13
Silterra
175
WIN
145
Altis
215
LFoundry
220
Telefunken
220
14
ASMC
134
Grace
100
He Jian
205
Altis
215
He Jian
215
15
WIN
117
ASMC
94
Silterra
200
He Jian
210
Silterra
213
16
Mosel-Vitelic
98
XinXin
55
ASMC
150
Silterra
205
ASMC
149
17
XinXin
20
Mosel-Vitelic
51
Mosel-Vitelic
80
ASMC
160
Lfoundry
140
18
Altis
0
Altis
0
XinXin
75
XinXin
90
Mosel-Vitelic
34
19
-
-
-
-
-
-
Mosel-Vitelic
85
-
-
20+
Others
148
Others
171
Others
204
Others
245
Others
254
Source: IC Insights, EE Times, Company Reports
7
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Information herein is proprietary and shall not be furnished to third parties or made public
Diversified Customer Base
10
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Information herein is proprietary and shall not be furnished to third parties or made public
Comprehensive Technology Portfolio
0.50 µm
0.35 µm
0.25 µm
0.18 µm
0.13
µm
0.13µm
BiCMOS, SiGe
SiGe
SiGe
SiGe
Power/BCD
BCD
BCD
Power/BCD
Image Sensor
Image Sensor
(X-Ray & Visible)
(X-Ray & Visible)
Image Sensor
(X-Ray & Visible)
eNVM
eNVM
Mixed-Signal
Digital CMOS
11
RFCMOS
RFCMOS and
SOI CMOS
RFCMOS and
SOI CMOS
RFCMOS and
SOI CMOS
Mixed-Signal
Digital CMOS
Mixed-Signal
Digital CMOS
Mixed-Signal
Digital CMOS
Mixed-Signal
Digital CMOS
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Information herein is proprietary and shall not be furnished to third parties or made public
Unmatched Design Enablement
Typical Foundry
PDK
Std Cells / IO
Memory
TowerJazz: Unique Design Tools, IP and Service
Mission
Lower
Development
Costs and
Enable Faster
Time-to-Market
12
Digital IP
NEW
Scalable Models
X-Sigma
PCMT
Design Sens. Tool
Die-Specific Models
Front to Back End
Design Flow
RMT
PADL
Jazz Inductor Toolbox
Reliability Models
PA Design Library
mmWave
Modeling
EDA Vendor
SLC
Partnerships
Statistical Loop Closure
Non-Volatile IP
Imager IP
Design Services
(Flash, MTP, OTP)
(Pixels, IP…)
(Internal, Partners)
RF/MS IP
(DAC, LA, PA…)
JIT
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
Scalable LDMOS
13
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Information herein is proprietary and shall not be furnished to third parties or made public
RF and HPA Applications and Technology
RF and Tuners
Front-End Modules
RF CMOS and SiGe BiCMOS
SOI Switch and SiGe Power Amplifiers
 Cell Phone, WiFi TxRx
 Basestation, Specialty Wireless
 TV, Satellite, STB Tuners
 Power Amplifiers
 Antenna Switch
 PA Controllers
mmWave
High Performance Analog
High Performance SiGe
Complementary BiCMOS




 Line Drivers DSL, HomePlug, ATE
 HDD PreAmp
 OpAmps, DAC, ADC
Optical Fiber Networks
Automotive Radar
60 GHz WiFi, 24GHz Backhaul
Light Peak and Thunderbolt
Best-in-class SiGe, RF CMOS, RF models and Design Enablement
14
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
RF and HPA Offering and Roadmap
Application
Technology
0.35µm
RF CMOS
RF and
Tuner
mmWave
SiGe
BiCMOS
SBC35
61/46/23GHz SiGe
3.3V or 5.0V CMOS
HP SiGe
18/61GHz P/N
PNP 7.5V
HPA
C-BiCMOS
High Voltage
P/N BVceo 14V
0.13µm
1.8/3.3V
1.8/5V
1.2/3.3V
1.2/2.5V
SBC18
155/78/38GHz SiGe
1.8/3.3V CMOS
TSBL13
90/67/37GHz SiGe
1.2/3.3V CMOS
SBC18H2
200/75GHz SiGe
1.8/3.3V CMOS
SBC13
200/75GHz SiGe
1.2/3.3V CMOS
SBC18H3
240GHz SiGe
1.8/3.3V CMOS
300GHz SiGe
1.2/3.3V CMOS
18/78GHz P/N
PNP 7.5V
High Speed
23GHz PNP
Higher Speed
35GHz PNP
SiGe PA
SBC18PA
20V Bcbo SiGe
TSV/DSV
TS13 CMOS PA
Dual 3.3um Cu
SOI Switch
1.8/3.3/5V or 2.5V
SOI CMOS
1.2/2.5V
SOI CMOS
Higher Voltage
P/N BVceo 24-36V
FEM
15
0.18µm
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Information herein is proprietary and shall not be furnished to third parties or made public
110/90nm
1.2/3.3V
350GHz SiGe
1.2/3.3V
High Performance SiGe BiCMOS
Best in class SiGe Speed / Power
Best in class Noise
10
250
9
SBC18H2
SBC18H3
8
200
100
SBC18 H3
SBC18 H2
SBC13
SBC18 HX
F
T
PEAK
150
NFMIN (dB)
(GHz)
7
50
6
3dB
5
4
3
2
1
0
1E-6
1E-5
I
C
1E-4
scaled to L
E
SBC18H3: Ft = 240 GHz, Ft = 270 GHz
1E-3
= 1um (A)
0.01
0
0
10
20
30
40
50
60
Frequency (GHz)
SBC18H3: Minimum Noise Figure
of 2 dB at 40 GHz
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Information herein is proprietary and shall not be furnished to third parties or made public
70
80
90
100
RF Switch SOI Technology
Replacing more expensive PHEMT and SOS Technology in wireless
Front-End-Modules
Thick SOI for
Integration
Thin SOI for Switch FoM
CA18 5V
CS18
CS18-1
CS13
Next Gen
5, 3.3 or 1.8V
2.5V
2.5/5V
1.2/2.5V
2.5V
450, 380, or 277
212
212
212
190
RF LDMOS
Option
No
No
No
No
SiGe NPN
No
No
No
No
No
Top metal
3um Al
3um Al
3um Al
3um Al
3um Al or Cu
Resistor
310, 1000
310, 1000
310, 1000
310, 1000
310, 1000
MIM Cap
1 or 2fF
2fF
0.5fF (27V)
2fF
0.5fF (27V)
2fF
0.5fF (27V)
2fF
0.5fF (27V)
SP4T, SP6T
SP2T, SP9T
TBD
TBD
TBD
Transistors
Ron-Coff (fs) *
IP and Samples
Available
* Measured on switch branch including metal parasitics (device Ron-Coff ~160fs for CS18)
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Information herein is proprietary and shall not be furnished to third parties or made public
SiGe Power Amplifier Technology
SiGe Power Amplifier Options
Result of 30dBm Power Cell
•
•
•
•
•
•
•
1.88GHz, Pout 30dBm (1dB compress)
68.8% PAE, Gain 15.1dB Samples Available
GaAs-like Cellular PA performance
High Voltage (8V) and High Speed (6V) NPN
TSV for low-inductance ground
High-res substrate
0.18um um CMOS for MIPI Integration
3.3V or 5V CMOS for Power management
Monthly MPW
PA30 with DSV
0.18um SiGe BiCMOS PA Process
Ft
Fmax
Bvceo
BVcbo
8V NPN
35
168
7.5
18
6V NPN
40
150
6
14
GHz
GHz
V
V
Silicon PA performance comparable to GaAs
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Information herein is proprietary and shall not be furnished to third parties or made public
Power: Key Growth Markets
FPD DC/DC, LED Backlighting
Digital Controlled Power – PMIC
Voltage requirements vary by make and
Model: Scalable 20 to 80V and low layer
count are the primary
advantage
1.8V CMOS combined with the High voltage
module provides the correct balance of
performance and cost for medium currents
High Power/Motor Driver
AC to DC up to 700V
High Power with isolated buried layer
Provides the noise Immunity
required for >2 Amp applications
 AC to DC conversion
 Industrial LED lighting
 High side driver for FETs
Enabling our customer base to compete with incumbent solutions
with a Modular Platform optimized to cover large voltage range
and power requirements
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Confidential
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19
Information herein is proprietary and shall not be furnished to third parties or made public
Power Management BCD Offering and Roadmap
Low Voltage -> 60V
Medium Voltage -> 100V
High Voltage -> 900V
PMIC, DC/DC, Audio,
Display/Motor Drivers, POE
Automotive, Industrial,
Medical
AC/DC, LED Lighting, IGBT
and MOSFET Drivers
CA18
TS100LS
TS18HVCMOS
Vgs =6.5V
V Vgs,Vds=1.8V,4.5V,9V
Vgs,Vds
V
Vgs = 6.5V-26V, Vds = 150V-850V
BCD35
TS100HS
Vgs =5/16V Vds=12-30V
Vgs = 6.5V-26V, float to 700V
TS18PM (1.8/5V), TS35PM (5V)
TS18/35UHV
Vgs=1.8/5V Vds=5V-80V, eNVM
Vgs = 5V, Vds = 150V-900V, eNVM
TS18SOI (HV SOI)
5V to 200V, eNVM
Vertical DMOS
70V low-Rdson device with robustness of discrete
Dashed frame: coming soon
20
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Information herein is proprietary and shall not be furnished to third parties or made public
14
Modular 0.18um BCD
Power Management Platform
Metal
Options
Die Shrink
Performance
“Isolation Options”
High Power, Motor Drivers
“Digital Density Layers”
125Kgates/mm2 for PMIC
“Base Platform” > 80v BVdss
20 layers for 3LM / Yflash NVM Module
Components: DC/DC, Class-D Audio, LDOs, LED Drivers
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Information herein is proprietary and shall not be furnished to third parties or made public
15
21
TS18/35PM Features
Base
CMOS
Isolation Option
Shallow
Deep
SOI *
1.8 V (TS18PM)
Yes
Yes
Yes
Yes
125Kgate/mm2
5 V (TS18PM/TS35PM)
Yes
Yes
Yes
Yes
35Kgate/mm2
HV Options NLDMOS Vds (5V Vgs)
12, 20-60
12, 20-60, 80
12, 20-60
Up to 200V
Operating
PLDMOS Vds (5V Vgs)
12, 20-60
12, 20-60
12, 20-60
Up to 200V
Operating
Epi and buried layer
No
Yes
Yes
No
Drain Isolated
No
No
Yes
Yes
1, 1.7, 3.4
1, 1.7, 3.4
1, 1.7, 3.4
1, 1.7, 3.4
fF/um2
Poly Resistor
1k or 2k
1k or 2k
1k or 2k
1k or 2k
Ohm/sq
Zener Diode (5.5v)
Option
Option
Option
Option
Schottky Diode
Yes
Yes
Yes
Yes
VNPN, SVPNP
Yes
Yes
Yes
Yes
64,4k, 16k
64,4k, 16k
64,4k, 16k
64,4k, 16k
3
3 to 5
3 to 5
3 to 5
Top Metal Al options
0.9, 2, 3
0.9, 2, 3
0.9, 2, 3
0.9, 2, 3
um
Top Metal Cu option
3.3
3.3
3.3
3.3
um
Passives
Other
MIM Cap
Embedded NVM
Metal Layers
Bits
* Coming soon
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Information herein is proprietary and shall not be furnished to third parties or made public
16
Rdson vs. BVdss of nLDMOS transistor
TowerJazz Gen1
100
TowerJazz Gen1
Rdson (mohm-mm2)
TowerJazz Gen2
TowerJazz Gen3
80
TowerJazz Gen4 (in Dev)
60
40
20
0
0
25
20
40
60
BVdss [V]
80
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Information herein is proprietary and shall not be furnished to third parties or made public
100
Isolated Platform – TS35/18PM-SI and TS35/18PM-DI
– Excellent choice for high current and inductive load applications such as
Class-D Audio Amplifiers or Motor Drivers
– Backwards compatible with Non-NBL platform devices (TS35PM and
TS18PM)
– All platform adders are fully supported
– Deep NBL gives better than 120dB Isolation
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Confidential
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confidential
Information herein is proprietary and shall not be furnished to third parties or made public
Ultra High Voltage (UHV): Key Growth Markets
LED lighting
AC to DC up to 700V
Industrial LED lighting for street
lighting and incandescent bulb
replacement
AC to DC offline
converters
Integrated Power
Integrated control circuits for MOSFET / IGBT
power devices in white appliances
27
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Information herein is proprietary and shall not be furnished to third parties or made public
TS100LS/HS, TS18/35UHV Features
CMOS
5V
TS100LS
Yes
TS100HS
Yes
Logic density
HV Options
Other
TS35UHV HS*
Yes
Comment
35
35
kgates/mm2
LDMOS Vfloat (5V Vgs)
No
Up to 650V
No
Up to 650V
Operating
LDMOS Vfloat (26V Vgs)
No
Up to 650V
No
Up to 650V
Operating
700V (29V)
No
700V (29V, 9V)
700V (29V, 9V)
Operating
MIM Cap
No
No
1, 1.7, 3.4
1, 1.7, 3.4
fF/um2
Poly Resistor
Yes
Yes
1k, 2k
1k, 2k
Ohm/sq
Zener Diode (5.5v)
Yes
Yes
Yes
Yes
VNPN, SVPNP
Yes
VNPN only
Yes
Yes
Embedded NVM
No
No
64
64
Metal Layers
2
2
3
3
Metal Material
Al
Al
Al
Al
Top Metal Al
1.2
1.2
2, 3
2, 3
JFET Vds (Vp)
Passives
TS35UHV LS*
Yes
Bits
um
* Coming soon
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Information herein is proprietary and shall not be furnished to third parties or made public
18
Summary of Power Management Technology
 Complete 0.18um BCD foundry technology (1.8V to 200V)




Low Rdson
Modular for low mask-count
Embedded NVM
Full Isolation SOI technology
12.6 mohm*mm2, 33V BVdss
20 layer, 80V process available
Yflash up to 16kbit modules
 Best in-class ultra high-voltage technology portfolio (700V)
 700V production process
 MOSFET/IGBT gate drive
 8-in, 0.35um, 900V extensions
17 ohm*mm2 at 750V BVdss
High-side process for motor-drive
 Best in class models and design enablement
 Scalable voltage devices (5V to 80V scalable devices)
 Design services with analog, power, and ESD expertise
 Multi-fab: 3, 8-in fabs on 3 continents w/ 0.18 BCD
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19
CIS Key Focus Markets
Professional Photography
Medical, X-Ray & Scientific
Highest requirements for image quality
Large sensors, very high resolution,
demanding frame rate
Very low defect count
Very high sensitivity, dynamic
range & low noise
Market Leader for dental x-ray CMOS
High sensitivity with large dynamic range
Supplying all Tier-1 vendors
Industrial & High Speed
Automotive, Security & 3D
High speed and high accuracy
Global shutter technology
“Intelligent” pixels
2D and line sensors
High sensitivity and high dynamic range
High NIR sensitivity
High frame rate
Linear HDR for color imagers
Technology, Flexibility, Experience and Commitment allows our
customers to bring to the market the best in class products
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20
TowerJazz CIS Advantage
 Experience
– 20 years of CIS experience
– Partnership with leaders
– Track record of success
 Technology
–
–
–
–
8” fab / 0.18um platform with 0.11um in-pixel DRs
3T / 4T / 5T pixel IP
Color filters and micro lenses
Patented Stitching technology
 Flexibility
– Custom pixel support
– Pixel JD programs
– Development test vehicle
 Commitment
– Management priority
– Strategic focus on high-end
31
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Information herein is proprietary and shall not be furnished to third parties or made public
Scout vehicle
Design Support Through Partners




Partnership with the best CIS custom design houses
Link between customer and design house
3-way collaboration projects
Flexible business model
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Information herein is proprietary and shall not be furnished to third parties or made public
22
New pixel shrink hybrid platform
TS18IS11 – 0.11µm pixel with 0.18 or 0.16µm circuit
 Smaller geometry hybrid process
– Smaller pixels
– Higher resolution
– Enhanced pixel performance
 Pixel array process
– 0.11um pixel process achieved through pushed implant process,
pushed metals and local interconnect layer.
– Up to ~50% area reduction
– Aluminum metallization to meet optical requirements
– Reuse of existing pixel devices, IP and knowhow
 Periphery circuitry process
–
–
–
–
33
Base process platform: TS16SL (0.16um)
Up to 21% circuit area reduction
Supported by existing 0.18um libraries
Allows reuse of existing customer IP blocks
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Information herein is proprietary and shall not be furnished to third parties or made public
Stitching
PRESS ENTER
TO START DEMO
Scanner reticle
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Information herein is proprietary and shall not be furnished to third parties or made public
Straightforward Stitching
 Stitch tool
– Easy to use
– Follow simple stitching design
rules
– Design “as if not stitched”
 Seamless stitching results
0.28 micron
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Information herein is proprietary and shall not be furnished to third parties or made public
35
CIS Application Segments
Consumer
Professional Photography
Medical & X-Ray
Industrial & High Speed
Automotive, Security & 3D
Scientific
36
Endoscopy and Gastrointestinal CMOS Sensors




Cooperation with market leaders
0.7 x 0.7 mm video camera - Smallest in the world
Disposable endoscopy applications
Ingestible pills
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
Dental X-Ray CMOS Sensors




Market Leader for dental x-ray CMOS sensors
Intra-Oral / Panoramic / Coned Beam CT (CBCT) / Cephallography
Supplying all Tier-1 vendors
Global Customer base: US, Europe and Asia
CBCT (dental CT)
Panoramic X-Ray
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
38
Medical X-Ray CMOS Sensors
 Large flat panel detectors
 Replacing older technologies
– Amorphous silicon plates
– Image intensifier tubes
 0.18um process / 8” wafers
 Volume production
 Excellent yields
Radiography
Fluoroscopy (hand)
Fluoroscopy (chest)
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Information herein is proprietary and shall not be furnished to third parties or made public
39
Mammography CMOS Sensors
 75um X-Ray pixel
 Wafer scale stitched sensors
 Very high sensitivity
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Information herein is proprietary and shall not be furnished to third parties or made public
40
TowerJazz X-Ray Pixels
Pixel
Size
(um)
Pixel
Type
Full Well
(ke)
Dark Signal
(mV/sec @30C)
Responsivity
(V/Lux*sec)
Dental
20
N+
600
3
1.5
Dental
20
N-well
650
3.4
1.7
Dental
20
BPD
600
0.4
1.5
Pixel
Mode
Size
(um)
Full Well
(Me)
STD
150
4.9
0.19
3.1
37
4-Bin
300
4.9
0.19
12.4
148
STD
150
0.8
1.15
1.5
420
4-Bin
300
0.8
1.15
5.95
1680
Radio
Fluoro
41
Conversion Dark current Response
Gain (uV/e)
(ke/sec)
(V x cm2/ uJ)
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Information herein is proprietary and shall not be furnished to third parties or made public
X-Ray Aging (customer measurements)
No noise-floor increase
Noise Floor - mean ± std
0.70
Noise Floor (GL)
• Lifetime dose spec is 100Gy (10 years operating
equivalent)
• The detector was operated up to 200Gy
• Full imaging test at RQA7 conditions was done at
10Gy intervals up to 100Gy, and 20Gy intervals upto
200Gy
• Expected scintillator sensitivity decrease &
afterglow effects observed
• No defect, dark-current or other significant
degradation of the CMOS
0.65
0.60
0.55
0.50
0
20
40
60
80
100 120 140 160 180 200
Accumulated Dose (Gy)
No dark current increase
No defect pixels increase
Dark Current - mean ± std
35
1145
Defects
25
1135
1130
1125
20
15
1120
10
1115
5
1110
After decay
of afterglow
0
0
42
Afterglow
effect
30
Idark (GL/sec)
# of defected pixels
1140
25
50
75
100
125
Accumulated Dose (Gy)
150
175
200
0
20
40
60
80
100
120
140
160
180
200
Accumulated Dose (Gy)
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
220 240 260
200 200
200
TowerJazz X-Ray Market Leadership
 Imaging technology
–
–
–
–
0.18um CIS technology
High performance pixels with very low dark current
Long experience in production
Very high yields
 Stitching technology
–
–
–
–
–
Patented stitching technology
Stitched 8” wafers with 0.18um process
Excellent stitching accuracy in 0.18um
Large 33x25mm scanner field size
Low stitch segment and stitch line count
 On chip integration
– Easy to integrate mixed-signal analog and digital
– Rich library, IP offering and design kit support
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
43
CIS Application Segments
Consumer
Professional Photography
Medical & X-Ray
Industrial & High Speed
Automotive, Security & 3D
Scientific
44
Space & Scientific Image Sensors
 Challenging market with extreme requirements
 Very low volume – high value
 Advanced technology required:
– Stitching
– High sensitivity / TDI pixels
– Backside illumination
– Near IR and/or UV sensitivity
45
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
CIS Technology Roadmap
Existing Offering
Project Start
Segment
Fab-2: 0.18um (8”)
Fab-1: 0.35um & 0.5um (6”)
Process Platforms
Color Filters & Micro-Lenses
Stitching
High-End Photography
X-ray and Medical
Operating Voltage: 1.8/3.3V, 1.8/5V
R&D offering
Optical Simulations
Pixel evaluation
Engineering vehicle
2014
Backside
Illumination
BSI advanced
features
Ultra Low Dark
Current
and LCOS
Imaging
Thin 3LM/4LM Metallization
2013
TS18IS11 pixels
Hybrid 0.11um pixel with 0.18 CMOS.
Local interconnect, optical recess over array.
Pixels: proven plug and play designs or
customized per customer product.
Global shutter, HDR, dual gain, 3D NIR
Ready for Prototyping
Automotive, Security
3D Imaging
HV LCOS
Stray rays
protection
Next generation HDR
pixel
3D IR Small
Pixel
Single photon Diode
High SNR Global
Shutter
Industrial & HighSpeed
Small 5T Pixel
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
24
CIS Application Range
Medical (X-ray)
Industrial,
Machine Vision,
Bar-Code
8” wafer size
Studio & High End Photography
Large Industrial, Scientific, Space
Professional
Photography
Consumer
6” Wafer Size
Wafer Size
Prosumer
Photography
48x36
645
Small Medical
47
1/10” 1/3”
1/2”
1/4”
2/3”
1”
4/3”
APS (3:2)
35 mm
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
Mixed-Signal/CMOS - Application Oriented Solutions
48
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
Mixed-Signal/CMOS Offering
Market segment focused approach based on our Package-per-Application:
 Application oriented devices and customizations, optimized per market needs
 Customer centric mode of operation - special adaptation per customer’s requirements,
dedicated engineering support , advanced design services
 Wide offering of analog devices, IPs and modeling (incl. comprehensive RF modeling)
 Qualified for Automotive (ISO/TS 16949 and AEC-Q100 Rev-G)
0.6/0.5/0.35 µm
0.18/0.16/0.152 µm
Wafer Size
6”
0.13 µm
8”
Core Voltage
3.3V or 5V
1.8V
1.2V or 1.0V
I/O Voltage
3.3V or 5V
3.3V or 5V or 1.8V
2.5V or 3.3V
Gate Oxide
130A
115A
70A
28A
20A ~ 24A
Metal Layer
2-3 LM
2-4 LM
3-5 LM
3-6 LM
3-8 LM
BEOL Metal
BEOL
Dielectric
Aluminum
USG (k=4.2)
Cu dual-damascene
USG or FSG
TowerJazz confidential
49
Information herein is proprietary and shall not be furnished to third parties or made public
FSG (k=3.7)
0.16µm and 0.152µm Half Node Technologies
TowerJazz’s Half Node technology: with your 0.18µm
existing design, earn up to 30% area reduction
 Smart shrink: area reduction of 20%
(TS16) or 30% (TS152)
 Special handling of analog/RF blocks
 Silicon-based SPICE
 Design for Manufacturing (DFM) kit
 Many years of experience with high
volume production
50
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
Flexible, High Quality Platforms
Device Rich
 High performance Backend-of-Line
capacitors and inductors
Metal Fat - Second Layer
Metal Fat – First Layer (3.3µm, Cu)
 Various metal layering combinations
 Special per-application devices
 Wide selection of resistors
Variety of Voltage Combinations
 Ideal for low-leakage/high speed
applications – with optional
combinations of both to
optimize performance
51
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
Platforms Overview
0.18um/0.16um
0.13um
Wafer Size
8”
8”
Application
Technology
Digital or RFCMOS
SL
Automotive Qualification
GP, RFCMOS
SL
1.8V
1.2V
(OVD=1.5V)
RF Modeling, RF PDK
Yes
Yes
I/O
1.2V
1V
(OVD=1.2V)
Per customer needs
Yes: SVt, HVt, LVt
Yes: SVt, HVt, LVt
3.3V or 5V
2.5V or 3.3V
Up to 6M, Al. Upper metals: 0.9 or
2 or 2.8um, Al. Option: 3.3um
BEOL Metal
HS-App.
LV
TS16929 2009 / AEC-Q100 Rev-G
Core Vdd
Core MultiVt
Low-Leakage
LL
Up to 8M – all Cu, 1 or 2 x ML (0.9um),
1 or 2 MF (3.3um)
Ind. Fat Metal
2um/2.8um Al or 3.3um Cu
3.3um Cu (once/twice)
Special devices
RFID: L/H Schottky, H-G beta VNPN,
ESD Diodes, TFT Res
Schottky Diodes, Gate-define-diodes, TFT Res,
1, 1.7 or 3.4fF/um2, MFC=Yes
1, 1.5 or 2fF/um2, MFC=Yes, MIMFC=3.8fF/um2
4.65um2, 3rd parts or TowerJazz
2.43um2 or 2.14um2
Pad-Over-Logic, RDL
Ready-to-use GDS and IOs, RDL=Yes
Ready-to-use GDS and IOs, RDL=Yes
ePolyFuse for OTP
Available with DR/DRC/LVS/P-Cells
Available with DR/DRC/LVS/P-Cells
BEOL caps: MIM, MFC, MIMFC
SP SRAM
52
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
MEMS
MEMS
 Production 8-inch MEMS capability in Two Fabs
 Production Experience- over 100M devices Ship
 High aspect ratio deep Si etch
 All dry layer release technology
 Proprietary cavity seal technology
 High voltage (80V) CMOS for actuation
 Ability to integrate MS / RF functions
 Partnership models for success
Si MEMS resonator –
replaces quartz timing
device. Courtesy SiTime
59
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
TowerJazz Quality Policy: TowerJazz is committed to
Automotive
Perfect Quality and Total Customer Satisfaction.
Safety
IP Security
Environmental
Quality
ISO TS16949
OHSAS 18001
BS/ ISO 27001
ISO 14001
ISO 9001:2000
• Quality Management System
• Customer Satisfaction
• Resource Management
• Supplier Quality
• Management Responsibility
• Process Control
• Internal Audit
• CAR/PAR
• Document Control
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• Environmental
Commitment
• Community
Feedback
• REACH Compliant
• RoHS Compliant
• JPGSSI Compliant
• Sony Green Partner
• Information Security
• Business Continuity
• International
Cooperation
• TJP - 2014
• Health & Safety
Commitment
• Community Feedback
TowerJazz confidential
Information herein is proprietary and shall not be furnished to third parties or made public
• Automotive
Industry Quality
Requirements