HA17080 Series
J-FET Input Operational Amplifiers
Description
Since J-FET input operational amplifiers are formed from a pair of J-FET transistors, they provide
superlative characteristics, including a high input impedance and a low input bias current. Thus they can be
used in a wide range of applications, from general-purpose control equipment to medical applications. In
particular, they are optimal for processing signals from high-impedance sensors.
Hitachi J-FET input operational amplifiers are available in single, dual, and quad versions. Other than the
HA17080, all products are internal phase compensation types and include a built-in phase compensation
capacitor. The HA17080 and the HA17083 allow offset adjustment. These products are also available in
“A” grade versions with superlative electrical characteristics to allow the selection of an operational
amplifier appropriate for the application.
Features
•
•
•
•
•
•
•
•
•
Wide operating power supply voltage range: ±5 V to ±18 V
Low input bias current: 30 pA
Low input offset current: 5 pA
High input impedance: 1012 Ω
High slew rate: 13 V/µs
Wide common mode input voltage range with operation possible near the power-supply voltage (VCC).
High voltage gain: 106 dB
The HA17080 and HA17083 support offset adjustment.
Pin compatible with the Texas Instruments TL080 series.
Notes: 1. Since these products are high input impedance operational amplifiers, contamination may cause
the input bias and input offset currents to increase if they are handled with bare hands.
Avoid contamination when handling these devices.
2. Since these products provide a high slew rate, oscillation may occur due to load capacitances.
(CL < 100 pF: voltage follower mode)
HA17080 Series
Ordering Information
Type No.
Item
HA17080
HA17082
HA17083
HA17084
Number of operational amplifiers
(number of channels)
Single
Dual
Dual
Quad
Offset adjustment pin
Yes
No
Yes
No
Phase compensation type
External
Internal
Internal
Internal
Pin Arrangement
HA17080
Offset
Null/Comp
1
Vin(−)
2
Vin(+)
3
VEE
4
HA17082
8
Comp
Vout1
1
−
7
VCC
Vin(−)1
2
+
6
Vout
Vin(+)1
3
5
Offset
Null
VEE
4
−
1
+
2
(Top view)
(Top view)
HA17083
HA17084
Vin(−)1
1
Offset
14 Null (N1)
Vin(+)1
2
Offset
Null (N2)
3
VEE
4
−
+
1
−
+
8
VCC
7
Vout2
6
Vin(−)2
5
Vin(+)2
Vout1
1
13 VCC
Vin(−)1
2
12 Vout1
Vin(+)1
3
12 Vin(+)4
VCC
4
11 VEE
10 Vout2
Vin(+)2
5
10 Vin(+)3
Vin(−)2
6
Vout2
7
11 NC
14 Vout4
−
1
4
+
+
−
13 Vin(−)4
+
Vin(+)2
6
9
VCC
Vin(−)2
7
8
Offset
Null (N1)
−
2
(Top view)
2
−
+
2
+
5
−
Offset
Null (N2)
3
(Top view)
9
Vin(−)3
8
Vout3
HA17080 Series
Voltage Offset Test Circuit
VCC
1 MΩ
Offset
2 MΩ Null/Comp
Offset
Null
−
+
CC
N2
N1
−
100 KΩ
Comp
+
VEE
HA17083
HA17080
Circuit Structure
VCC
Vin(+)
Vin(−)
Offset
Null/Comp
HA17080
Offset Null
only
Comp
Vout
To VCC
To VCC
VEE
Offset
Null (N1)
Offset
Null (N2)
HA17083 only
Note: The HA17080 does not have an internal phase compensation capacitor.
3
HA17080 Series
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings (P, PS Series)
Unit
Notes
Power-supply voltage
VCC
+18
V
VEE
–18
V
Differential input voltage
Vin(diff)
±30
V
Input voltage
Vin
±15
V
1
Allowable power dissipation
PT
625
mW
2
Operating temperature
Topr
–20 to +75
°C
Storage temperature
Tstg
–55 to +125
°C
Notes: 1. When the power-supply voltage is less than ±15 V, the input voltage must fall within the powersupply voltage range.
2. These are the allowable values up to Ta = 50°C for the P and PS series. Derate by 8.3 mW/°C
above that temperature.
4
HA17080 Series
Electrical Characteristics (VCC = –VEE = 15 V, Ta = 25°C)
HA17080 Series
HA17080A Series
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test Conditions
Notes
Input offset voltage
VIO
—
5
15
—
3
6
mV
RS = 50 Ω
1
Input offset current
IIO
—
5
200
—
5
100
pA
IIO = | IIB(+) – IIB(–) |
1
Input bias current
IIB
—
30
400
—
30
200
pA
1, 2
Common-mode
input voltage range
VCM
±10
—
—
±11
—
—
V
1
Maximum output
voltage amplitude
Vop-p
24
27
—
24
27
—
V
20
24
—
20
24
—
RL ≥ 10 kΩ
RL ≥ 2 kΩ
Voltage Gain
AVD
88
106
—
94
106
—
dB
RL ≥ 2 kΩ, VO = ±10 V
1
Common-mode
rejection ratio
CMR
70
86
—
80
86
—
dB
RS ≤ 10 kΩ
1
Power supply
rejection ratio
PSRR
70
86
—
80
86
—
dB
RS ≤ 10 kΩ
1
Supply current
ICC
—
1.4
2.8
—
1.4
2.8
mA
Bandwidth
BW
—
3
—
—
3
—
MHz
AVD = 1
Slew rate
SR
—
13
—
—
13
—
V/µs
Vin = 10 V, RL = 2 kΩ,
CL = 100 pF, AVD = 1
Channel separation CS
—
120
—
—
120
—
dB
AVD = 100
Rise time
tr
—
0.1
—
—
0.1
—
µs
Vin = 20 mV, RL = 2 kΩ
Overshoot
Vover
—
10
—
—
10
—
%
CL = 100 pF, AVD = 1
Input resistance
Rin
—
1012
—
—
1012
—
Ω
Input noise voltage
Vn
—
35
—
—
35
—
nV/√Hz RS = 100 Ω, f = 1 kHz
3
Notes: 1. The non-A ratings apply to the HA17080, HA17082, HA17083, and HA17084.
The A version ratings apply to the HA17080A, HA17082A, HA17083A, and HA17084A.
2. This is the J-FET gate leakage current, which is temperature dependent. The junction
temperature must be held near room temperature when measuring this parameter.
3. This is the per-channel value.
5
HA17080 Series
Characteristic Curves
Input Bias Current vs.
Ambient Temperature
Input Bias Current vs.
Common-Mode Input Voltage
120
Input bias current IIB (pA)
VCC = +15 V
VEE = −15 V
VCM = 0 V
1k
100
10
−50
−25
25
50
75
30
15
VCC = +15 V
VEE = −15 V
Ta = 25°C
5
1k
10 k
100 k
1M
10
25
2 kΩ
20
15
10
VCC = +15 V
VEE = −15 V
5
−25
0
25
50
75
100
Ambient temperature Ta (°C)
Maximum Output Voltage
Amplitude vs. Load Resistance
Maximum Output Voltage
Amplitude vs. Power-Supply Voltage
30
Maximum output voltage amplitude
VOP-P (V)
Maximum output voltage amplitude
VOP-P (V)
5
Frequency f (Hz)
VCC = +15 V
VEE = −15 V
Ta = 25°C
20
15
10
5
0.2
0.5
1.0
2
Load resistance RL (kΩ)
6
0
RL = 10 kΩ
0
−50
10 M
30
0
0.1
−5
Maximum Output Voltage
Amplitude vs. Ambient Temperature
20
25
20
Maximum Output Voltage
Amplitude vs. Frequency
2 kΩ
100
40
Common-mode input voltage VCM (V)
25
0
60
0
−10
100
RL = 10 kΩ
10
80
Ambient temperature Ta (°C)
30
Maximum output voltage amplitude
VOP-P (V)
0
VCC = +15 V
VEE = −15 V
Ta = 25°C
100
Maximum output voltage amplitude
VOP-P (V)
Input bias current IIB (pA)
10 k
5
10
RL = 10 kΩ
Ta = 25°C
25
20
15
10
5
0
0
±3
±6
±9
±12
±15
Power-supply voltage VCC, VEE (V)
±18
HA17080 Series
Voltage Gain vs. Frequency (1)
Voltage Gain vs. Frequency (2)
150
150
VCC = +15 V
VEE = −15 V
RL = 10 kΩ
Ta = 25°C
100
75
50
100
75
50
25
25
0
10
0
1
10
100
1k
10 k 100 k 1 M 10 M
100
100 k
1M
Voltage Gain vs.
Ambient Temperature
Input Noise Voltage vs.
Frequency
10 M
Input noise voltage Vn (nV/√Hz)
120
100
75
50
VCC = +15 V
VEE = −15 V
RL = 2 kΩ
25
0
−50
−25
0
25
50
75
VCC = +15 V
VEE = −15 V
RS = 100 Ω
Ta = 25°C
100
80
60
40
20
0
10
100
100
Ambient temperature Ta (°C)
120
120
Power-supply rejection ratio
PSRR (dB)
VCC = +15 V
VEE = −15 V
Ta = 25°C
100
80
60
40
20
100
1k
10 k
100 k
Frequency f (Hz)
1M
1k
10 k
100 k
Frequency f (Hz)
Common-Mode Rejection Ratio vs.
Frequency
Common-mode rejection ratio
CMR (dB)
10 k
Frequency f (Hz)
125
0
10
1k
Frequency f (Hz)
150
Voltage gain AVD (dB)
VCC = +15 V
VEE = −15 V
CL = 3 pF
Ta = 25°C
125
Voltage gain AVD (dB)
Voltage gain AVD (dB)
125
10 M
Power-Supply Rejection Ratio vs.
Frequency
VCC = +15 V
VEE = −15 V
Ta = 25°C
100
80
VCC
60
VEE
40
20
0
10
100
1k
10 k
100 k
1M
10 M
Frequency f (Hz)
7
HA17080 Series
Supply current vs.
Power-Supply Voltage
2.4
Supply current vs.
Ambient Temperature
2.4
Supply current ICC ± (mA)
2.0
1.6
1.2
0.8
0.4
0
±3
0
±9
±12
±15
1.2
0.8
0.4
120
±3
0
±6
±9
±12
±15
50
60
40
20
0
Input
−2
−4
0.5
1
1.5
2
Time t (µs)
2.5
3
25
50
75
100
3.5
VCC = +15 V
VEE = −15 V
RS = 51 Ω
Rf = 5.1 kΩ
R = 100 kΩ
+1.0
0
−1.0
−2.0
0
0
HA17083 Offset Adjustment
+2.0
Output Voltage Vout (V)
Output
−25
Ambient temperature Ta (°C)
VCC = +15 V
VEE = −15 V
RL = 2 kΩ
CL = 100 pF
Ta = 25°C
2
100
75
80
0
−50
±18
Voltage Follower Large Signa
Pulse Response
4
Output Voltage Vout (V)
25
VCC = +15 V No signal
VEE = –15 V No load
Per channel
100
Power-supply voltage VCC, VEE (V)
8
0
Power Dissipation vs.
Ambient Temperature
20
−6
−25
Power Dissipation vs.
Power-Supply Voltage
40
6
VCC = +15 V
VEE = −15 V
No signal
No load
Per channel
Ambient temperature Ta (°C)
60
0
1.6
0
−50
±18
Ta = 25°C
No signal
No load
80
2.0
Power-supply voltage VCC, VEE (V)
100
Power dissipation Pd (mW)
±6
Power dissipation Pd (mW)
Supply current ICC ± (mA)
Ta = 25°C
0
50
Resistor position a (%)
100
HA17080 Series
Package Dimensions
Unit: mm
6.3
7.4 Max
9.6
10.6 Max
8
5
1
0.89
4
1.3
0.1 Min
7.62
2.54 Min 5.06 Max
1.27 Max
+ 0.10
0.25 – 0.05
0.48 ± 0.10
2.54 ± 0.25
0° – 15°
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DP-8
Conforms
Conforms
0.54 g
Unit: mm
19.20
20.32 Max
8
6.30
7.40 Max
14
1.30
7
2.54 ± 0.25
0.48 ± 0.10
0.51 Min
2.39 Max
2.54 Min 5.06 Max
1
7.62
+ 0.10
0.25 – 0.05
0° – 15°
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DP-14
Conforms
Conforms
0.97 g
9
HA17080 Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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