BCM846S
NPN Silicon AF Transistor Array
• Precision matched transistor pair: ∆IC ≤ 10%
4
5
6
• For current mirror applications
1
• Low collector-emitter saturation voltage
2
3
• Two (galvanic) internal isolated Transistors
• Complementary type: BCM856S
• BCM846S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07178
Type
BCM846S
Marking
Pin Configuration
Package
1Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
65
Collector-emitter voltage
VCES
80
Collector-base voltage
VCBO
80
Emitter-base voltage
VEBO
6
Collector current
IC
100
Peak collector current, tp ≤ 10 ms
ICM
200
Total power dissipation-
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
mA
TS = 115 °C
1
-65 ... 150
2011-10-05
BCM846S
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
140
K/W
Values
Unit
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
V(BR)CEO
65
-
-
V(BR)CBO
80
-
-
V(BR)CES
80
-
-
V(BR)EBO
6
-
-
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 10 mA, IB = 0 A
Collector-base breakdown voltage
IC = 10 µA, IE = 0 A
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 A
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 A
Collector-base cutoff current
µA
ICBO
VCB = 30 V, IE = 0 A
-
-
0.015
VCB = 30 V, IE = 0 A, TA = 150 °C
-
-
5
DC current gain-2)
-
hFE
IC = 10 µA, VCE = 5 V
-
250
-
IC = 2 mA, VCE = 5 V
200
290
450
Collector-emitter saturation voltage2)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
90
300
IC = 100 mA, IB = 5 mA
-
200
650
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
900
-
IC = 2 mA, VCE = 5 V
580
660
700
IC = 10 mA, VCE = 5 V
-
-
770
Base emitter saturation voltage2)
VBEsat
Base-emitter voltage-2)
VBE(ON)
∆IC
Matching
IB = 1 µA, VCE1 = V CE2 = 1.0V
IB = 100 µA, VCE1 = VCE2 = 1.0V
%
-10
-
10
-10
-
10
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Puls
test: t < 300µs; D < 2%
2
2011-10-05
BCM846S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
0.95
-
pF
Ceb
-
9
-
h11e
-
4.5
-
kΩ
h12e
-
2
-
10-4
h21e
-
330
-
-
h22e
-
30
-
µS
F
-
-
10
dB
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Noise figure
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ
3
2011-10-05
BCM846S
DC current gain hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5V
IC = ƒ(VCEsat ), hFE = 20
EHP00365
10 3
h FE 5
100 C
EHP00367
10 2
mA
ΙC
100 C
25 C
-50 C
25 C
-50 C
10 2
10 1
5
5
10 1
10
5
5
10 0
10 -2
5 10 -1
5 10 0
5 10 1
0
10 -1
mA 10 2
0
0.1
0.2
0.4
0.3
ΙC
Base-emitter saturation voltage
Output characteristics IC = ƒ(VCE),
IC = ƒ(VBEsat), hFE = 20
IB = parameter
EHP00364
10 2
V 0.5
VCEsat
15
mA
Ι C mA
IB = 36 uA
11
10
IC
10 1
IB = 40 uA
12
100 C
25 C
-50 C
5
IB = 32 uA
9
IB = 28 uA
8
IB = 24 uA
7
IB = 20 uA
6
10 0
IB = 16 uA
5
IB = 12 uA
4
5
3
IB = 8 uA
2
IB = 4uA
1
10
-1
0
0.2
0.4
0.6
0.8
V
0
0
1.2
1
2
3
V
5
VCE
V BEsat
4
2011-10-05
BCM846S
Collector current IC = ƒ(VBE)
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10 -1
A
5V
EHP00381
10 4
nA
1V
Ι CB0
10 -2
10 3
IC
5
10 -3
max
10 2
5
10 -4
typ
10 1
5
10 -5
10
0
5
10 -6
0.4
0.5
0.6
0.7
0.8
V
10 -1
1
0
50
100
VBE
TA
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
EHP00363
10 3
12
pF
MHz
5
10
CCB(CEB )
fT
150
C
10 2
9
8
7
6
5
5
CEB
4
3
2
1
10 1
10 -1
5 10 0
5
10 1
mA
0
0
10 2
CCB
4
8
12
16
V
22
VCB(VEB
ΙC
5
2011-10-05
BCM846S
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
300
mW
K/W
250
10 2
RthJS
Ptot
225
200
175
10 1
150
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
125
100
10 0
75
50
25
0
0
15
30
45
60
90 105 120 °C
75
10 -1 -6
10
150
TS
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(t p)
Ptotmax/PtotDC
10 3
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
2011-10-05
BCM846S
Definition of matching
∆IC = (IC2-IC1)/IC1
$
#
6 "
6
!
1>
1?
1? 8 ? A 8 ? A
7
2011-10-05
Package SOT363
BCM846S
Package Outline
2 ±0.2
0.9 ±0.1
+0.1
6x
0.2 -0.05
0.1
0.1 MAX.
M
0.1
Pin 1
marking
1
2
3
A
1.25 ±0.1
4
0.1 MIN.
5
2.1 ±0.1
6
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
1.6
0.9 0.7
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.3
8
4
Pin 1
marking
1.1
2.15
8
2011-10-05
BCM846S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
9
2011-10-05