Freescale Semiconductor
Technical Data
Document Number: MHL9236N
Rev. 9, 12/2006
Replaced by MHL9236NN. There are no form, fit or function changes with this part
replacement.
MHL9236N
Designed for ultra - linear amplifier applications in 50 ohm systems operating
in the cellular frequency band. A silicon FET Class A design provides
outstanding linearity and gain. In addition, the excellent group delay and phase
linearity characteristics are ideal for the most demanding analog or digital
modulation systems, such as TDMA, CDMA or QPSK.
• Third Order Intercept: 47 dBm Typ
• Power Gain: 30.5 dB Typ (@ f = 880 MHz)
• Input and Output VSWR v 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• For Use in TDMA, CDMA, QPSK or Analog Systems
• N Suffix Indicates Lead - Free Terminations
800 - 960 MHz
2.5 W, 30.5 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
VDD
30
Vdc
RF Input Power
Pin
+10
dBm
Storage Temperature Range
Tstg
- 40 to +100
°C
Operating Case Temperature Range
TC
- 20 to +100
°C
Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Supply Current
Power Gain
(f = 880 MHz)
Gain Flatness
(f = 800 - 960 MHz)
Power Output @ 1 dB Compression
(f = 880 MHz)
Symbol
Min
Typ
Max
Unit
IDD
—
550
620
mA
Gp
29
30.5
32
dB
GF
—
0.1
0.3
dB
P1dB
33
34
—
dBm
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
46
47
—
dBm
Noise Figure
NF
—
3.5
4.5
dB
(f = 800 - 960 MHz)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Cellular Band
RF Linear LDMOS Amplifier
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006, 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MHL9236N
1
TYPICAL CHARACTERISTICS
50
Gp
20
ITO
P1dB, ITO (dBm)
45
IRL
0
ORL
−20
40
35
P1dB
1600
30
400
2000
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
600
800
f, FREQUENCY (MHz)
1000
1200
Figure 2. P1dB, ITO versus Frequency
33
50
VDD = 26 Vdc
f = 880 MHz
32
48
31
VDD = 26 Vdc
f = 880 MHz 35
ITO
580
Gp
30
575
29
570
27
−40
−20
0
40
60
20
TEMPERATURE (°C)
80
100
34.5
44
34
33.5
42
565
28
46
P1dB
IDD
40
−40
560
120
Figure 3. Power Gain, IDD versus Temperature
−20
0
20
40
60
TEMPERATURE (°C)
80
33
120
100
Figure 4. ITO, P1dB versus Temperature
−420
2.2
0.50
0.30
PHASE ( °)
−435
GROUP DELAY
−440
2.0
0.20
0.40
PHASE LINEARITY
0.10
0.30
GF
VDD = 26 Vdc
f = 880 MHz
−445
−450
−40
G F , GAIN FLATNESS (dB)
2.1
PHASE
GROUP DELAY (nS)
−425
−430
−20
0
20
40
60
TEMPERATURE (°C)
80
100
1.9
120
Figure 5. Phase(1), Group Delay(1) versus Temperature
1. In Production Test Fixture
ARCHIVE INFORMATION
1200
f, FREQUENCY (MHz)
0
−40
−20
0
VDD = 26 Vdc
f = 800−960 MHz
20
40
60
TEMPERATURE (°C)
80
100
0.20
120
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
MHL9236N
2
RF Device Data
Freescale Semiconductor
PHASE LINEARITY( °)
800
ITO (dBm)
G p , POWER GAIN (dB)
ARCHIVE INFORMATION
−40
400
VDD = 26 Vdc
TC = 25°C
P1dB (dBm)
VDD = 26 Vdc
TC = 25°C
I DD , (mA)
POWER GAIN/RETURN LOSS (dB)
40
TYPICAL CHARACTERISTICS
650
31.1
550
30.9
500
Gp
30.7
26
VOLTAGE (VOLTS)
40
22
400
30
−433.5
2.03
GROUP DELAY
2.02
PHASE
2.01
−434.5
26
VOLTAGE (VOLTS)
28
2.00
30
Figure 9. Phase(1), Group Delay(1) versus Voltage
1. In Production Test Fixture
f = 880 MHz
TC = 25°C
24
26
VOLTAGE (VOLTS)
33
28
30
32
0.50
0.11
0.45
0.10
GF
0.40
0.35
0.09
0.08
PHASE LINEARITY
0.30
0.07
f = 800−960 MHz
TC = 25°C
0.25
f = 880 MHz
TC = 25°C
24
PHASE LINEARITY( °)
2.04
−435
22
34
Figure 8. ITO, P1dB versus Voltage
−433
PHASE ( °)
44
Figure 7. Power Gain, IDD versus Voltage
−434
35
42
450
28
46
P1dB
GROUP DELAY (nS)
ARCHIVE INFORMATION
24
36
ITO
ARCHIVE INFORMATION
600
ITO (dBm)
31.3
30.5
22
48
IDD
P1dB (dBm)
f = 880 MHz
TC = 25°C
50
I DD (mA)
G p , POWER GAIN (dB)
31.5
700
0.20
22
24
26
VOLTAGE (VOLTS)
28
0.06
30
Figure 10. Phase Linearity, Gain Flatness
versus Voltage
0.05
MHL9236N
RF Device Data
Freescale Semiconductor
3
G F , GAIN FLATNESS (dB)
31.7
PACKAGE DIMENSIONS
A
A
2X
G
M
T A
R
1
2
3
4
K
W
0.020 (0.51)
M
4X
D
T B
M
N
L
H
ARCHIVE INFORMATION
F
E
C
4X
P
0.020 (0.51)
T
SEATING
PLANE
M
M
A
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION "F" TO CENTER OF LEADS.
S
J
T S
S
B
M
M
T
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
W
STYLE 1:
PIN 1.
2.
3.
4.
CASE:
CASE 301AP - 02
ISSUE E
INCHES
MIN
MAX
1.760
1.780
1.370
1.390
0.245
0.265
0.017
0.023
0.080
0.100
0.086 BSC
1.650 BSC
1.290 BSC
0.266
0.280
0.125
0.165
0.990 BSC
0.390 BSC
0.008
0.013
0.118
0.132
0.535
0.555
0.445
0.465
0.090 BSC
RF INPUT
VDD1
VDD2
RF OUTPUT
GROUND
MILLIMETERS
MIN
MAX
44.70
45.21
34.80
35.31
6.22
6.73
0.43
0.58
2.03
2.54
2.18 BSC
41.91 BSC
32.77 BSC
6.76
7.11
3.18
4.19
25.15 BSC
9.91 BSC
0.20
0.33
3.00
3.35
13.59
14.10
11.30
11.81
2.29 BSC
ARCHIVE INFORMATION
0.020 (0.51)
Q
0.008 (0.20)
MHL9236N
4
RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Date
9
Dec. 2006
Description
• Added replacement part information, p. 1
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Revision
MHL9236N
RF Device Data
Freescale Semiconductor
5
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
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MHL9236N
Document Number: MHL9236N
6Rev. 9, 12/2006
RF Device Data
Freescale Semiconductor