DG1408, DG1409
www.vishay.com
Vishay Siliconix
3.2 Ω, 8-Channel / Dual 4-Channel,
± 15 V, +12 V, ± 5 V Precision Multiplexers
DESCRIPTION
FEATURES
The DG1408 is a precision analog multiplexer comprising
eight single-ended channels. The DG1409 is a dual four
single-ended channels analog multiplexer. Built on a new
CMOS process, the Vishay Siliconix DG1408 and DG1409
offer low on-resistance of 3.2 Ω. The low and flat resistance
over the full signal range provides excellent linearity and low
signal distortion. The new CMOS platform also ensures ultra
low power dissipation, minimized parasitic capacitance, and
low charge injection.
• 35 V supply max. rating
The DG1408 and DG1409 can operate from either a single
4.5 V to 24 V power supply, or from dual ± 4.5 V to ± 15 V
power supplies. The DG1408 connects one of eight inputs
to a common output as determined by a 3-bit binary
address (A0, A1, A2). The DG1409 connects one of four
inputs to a common output for both multiplexers as
determined by a 2-bit binary address (A0 and A1).
Break-before-make switching action protects against
momentary crosstalk between adjacent channels. The part
does not require a VL logic supply, while all digital inputs
have 0.8 V and 2 V logic thresholds to ensure low-voltage
TTL / CMOS compatibility. Together with the compact
package, these make the part a great fit for battery operated
systems.
The DG1408 and DG1409 on channel conduct signal equally
well in both directions. In the off state each channel blocks
voltages up to the power supply rails. An enable (EN)
function allows the user to reset the multiplexer /
demultiplexer to all switches off for stacking several
devices.
• 3.2 Ω typical and 4.7 Ω max. on-resistance at
25 °C
• 0.5 Ω on-resistance flatness
• Channel to channel on-resistance match: 0.2 Ω
• Up to 250 mA continuous current
• Supports single and dual supply operation
• Fully specified at ± 15 V, +12 V, and ± 5 V
• Integrated VL supply
• Low voltage logic compatible inputs, VIH = 2 V, VIL = 0.8 V
• BBM (break-before-make switching)
• Low parasitic capacitance:
DG1408, CS(off) = 14 pF, CD(on) = 123 pF
DG1409, CS(off) = 14 pF, CD(on) = 81 pF
• Rail to rail signal handling
• QFN16, 4 mm × 4 mm packages
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Low insertion loss
• Low distortion
• Low power consumption
• Compact solution
• Low charge injection over the full signal range
The advance performance of low insertion loss and low
distortion make the device ideal for signal switching and
relay replacement in a wide range of applications.
APPLICATIONS
DG1408 and DG1409 are available in RoHS-compliant,
halogen-free QFN16, 4 mm x 4 mm package.
• Data acquisition system
• Medical and healthcare equipment
• Industrial control and automation
• Test and measurement equipment
• Communication systems
• Battery powered systems
• Sample and hold circuits
• Audio and video signal switching
• Relay replacement
S14-1915-Rev. B, 22-Sep-14
Document Number: 62957
1
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408, DG1409
www.vishay.com
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG1408
QFN16 (4 mm x 4 mm)
EN
A0
A1
A2
16
15
14
13
DG1409
QFN16 (4 mm x 4 mm)
Decoder/Driver
EN
A0
A1 GND
16
15
14
13
Decoder/Driver
12 GND
V-
1
S1 2
11 V+
S1a
2
11 S1b
S2 3
10 S5
S2a
3
10 S2b
S3 4
9
S6
S3a
4
9
V-
1
12 V+
5
6
7
8
5
6
7
8
S4
D
S8
S7
S4a
Da
Db
S4b
TRUTH TABLE - DG1408
S3b
TRUTH TABLE - DG1409
A2
A1
A0
EN
ON SWITCH
A1
A0
EN
ON SWITCH
X
0
0
0
0
1
1
1
1
X
0
0
1
1
0
0
1
1
X
0
1
0
1
0
1
0
1
0
1
1
1
1
1
1
1
1
None
1
2
3
4
5
6
7
8
X
0
0
1
1
X
0
1
0
1
0
1
1
1
1
None
1
2
3
4
Note
• QFN exposed pad tied to V-
ORDERING INFORMATION
PART
CONFIGURATION
DG1408
8:1 MUX
DG1409
Dual 4:1 MUX
TEMPERATURE RANGE
PACKAGE
ORDERING PART NUMBER
-40 °C to +125 °C
QFN (4 mm x 4 mm) 16L (variation 2)
DG1408EN-T1-GE4
DG1409EN-T1-GE4
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL PARAMETER
CONDITIONS
LIMITS
V+
Reference to GND
-0.3 V to +25 V
V-
Reference to GND
+0.3 V to -25 V
V+ to V-
+35
Analog Inputs (S or D)
Maximum Pulse Switch Current
Thermal Resistance
V
V- (-0.3 V) to V+ (+0.3 V)
Digital Inputs
Maximum Continuous Switch Current
UNIT
GND (-0.3 V) to V+ (+0.3 V)
QFN (4 mm x 4 mm) 16L, TA = 25 °C
250
QFN (4 mm x 4 mm) 16L, TA = 125 °C
100
Pulse at 1 ms, 10 % duty cycle
500
QFN (4 mm x 4 mm) 16L
32
mA
°C/W
Temperature
Operating Temperature
-40 to 125
Max. Operating Junction Temperature
150
Storage Temperature
°C
-65 to 150
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
ELECTRICAL
Single Supply (V+)
Dual Supplies (V+ and V-)
S14-1915-Rev. B, 22-Sep-14
MINIMUM
MAXIMUM
4.5
24
± 4.5
± 16.5
UNIT
V
Document Number: 62957
2
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408, DG1409
www.vishay.com
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 15 V, V- = -15 V
VAX, VEN = 2 V, 0.8 V
+25 °C
-40 °C to
+85 °C
-40 °C to
+125 °C
MIN. /
TYP. /
MAX.
UNIT
-
V
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
V- to V+
VANALOG
RDS(on)
On-Resistance Flatness
Rflat(on)
On-Resistance Matching
ΔRDS(on)
Source Off Leakage Current
IS(off)
Drain Off Leakage Current
ID(off)
Drain On Leakage Current
ID(on)
VS = ± 10 V, IS = -10 mA,
V+ = +13.5 V, V- = -13.5 V
V+ = +16.5 V, V- = -16.5 V,
VS = ± 10 V, VD = ± 10 V
V+ = +16.5 V, V- = -16.5 V,
VS = VD = ± 10 V
3.2
-
-
Typ.
4.7
5.7
6.7
Max.
0.5
-
-
Typ.
0.7
0.8
0.9
Max.
0.2
-
-
Typ.
0.7
0.8
1
Max.
± 0.02
-
-
Typ.
± 0.2
± 0.8
± 10
Max.
± 0.06
-
-
Typ.
± 0.3
±3
± 20
Max.
± 0.08
-
-
Typ.
±1
±4
± 35
Max.
Ω
nA
Digital Control
Input, High Voltage
VINH
-
-
2
Min.
Input, Low Voltage
VINL
-
-
0.8
Max.
Input Leakage
IIN
Digital Input Capacitance
CIN
VIN = VGND or V+
0.005
-
-
Typ.
-
-
± 0.1
Max.
3.5
-
-
Typ.
V
μA
pF
Dynamic Characteristics
Transition Time
tTRANS
VS1 = +10 V / -10 V, VS8 = -10 V / +10 V,
RL = 100 Ω, CL = 35 pF
140
-
-
Typ.
180
220
250
Max.
Break-Before-Make Time
tOPEN
VS1= VS8 = 10 V,
RL= 100 Ω, CL = 35 pF
50
-
-
Typ.
-
-
10
Min.
125
-
-
Typ.
150
170
190
Max.
100
-
-
Typ.
120
140
160
Max.
Typ.
pC
Typ.
dB
Typ.
%
Typ.
MHz
Enable Turn-On Time
Enable Turn-Off Time
tON(EN)
tOFF(EN)
VS1 = 10 V, VS2 - VS8 = 0 V,
RL = 100 Ω, CL = 35 pF
CINJ = 1 nF, RGEN = 0 Ω, VS = 0 V
100
-
-
CL = 5 pF, RL = 50 Ω, 1 MHz
-60
-
-
-64
-
-
0.02
-
-
DG1408
46
-
-
DG1409
68
-
-
14
-
-
DG1408
89
-
-
DG1409
46
-
-
DG1408
123
-
-
DG1409
81
-
-
Charge Injection
QINJ
Off Isolation
OIRR
Cross Talk
XTALK
Total Harmonic Distortion
THD
RL = 100 Ω, 15 Vp-p,
f = 20 Hz to 20 kHz
-3dB, Bandwidth
BW
RL = 50 Ω
Source Off Capacitance
Drain Off Capacitance
Drain On Capacitance
CS(off)
CD(off)
f = 1 MHz, VS = 0 V
CD(on)
ns
Typ.
Typ.
pF
Typ.
Power Supply
Power Supply Range
Positive Supply Current
Negative Supply Current
S14-1915-Rev. B, 22-Sep-14
GND = 0 V
I+
I-
± 4.5 / ± 16.5
VAX, VEN = 0 V, V+,
V+ = +16.5 V, V- = -16.5 V
17
VAX, VEN = 5 V,
V+ = +16.5 V, V- = -16.5 V
VAX, VEN = 0 V, V+,
V+ = +16.5 V, V- = -16.5 V
Min. / Max.
14.5
14
Typ.
-
-
30
Max.
17
14.5
14
Typ.
-
-
50
Max.
0.002
0.22
0.4
Typ.
-
-
1
Max.
V
μA
Document Number: 62957
3
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408, DG1409
www.vishay.com
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 12 V, V- = 0 V
VAX, VEN = 2 V, 0.8 V
+25 °C
-40 °C to
+85 °C
-40 °C to
+125 °C
MIN. /
TYP. /
MAX.
UNIT
-
V
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
VANALOG
RDS(on)
On-Resistance Flatness
Rflat(on)
On-Resistance Matching
ΔRDS(on)
Source Off Leakage Current
IS(off)
Drain Off Leakage Current
ID(off)
Drain On Leakage Current
ID(on)
0 to V+
VS = 0 V / 10 V, IS = -10 mA,
V+ = +10.8 V, V- = 0 V
V+ = +13.2 V, V- = 0 V,
VS = 1 V / 10 V, VD = 10 V / 1 V
VS = VD = 1 V / 10 V
5.5
-
-
Typ.
8
9
11
Max.
1
-
-
Typ.
2
2.5
3
Max.
0.2
-
-
Typ.
0.7
0.8
1
Max.
± 0.02
-
-
Typ.
± 0.2
± 0.6
±5
Max.
± 0.02
-
-
Typ.
± 0.3
±2
± 20
Max.
± 0.05
-
-
Typ.
± 0.6
±3
± 20
Max.
Ω
nA
Digital Control
Input, High Voltage
VINH
-
-
2
Min.
Input, Low Voltage
VINL
-
-
0.8
Max.
Input Leakage
IIN
Digital Input Capacitance
CIN
VIN = VGND or V+
0.001
-
-
Typ.
-
-
± 0.1
Max.
3.5
-
-
Typ.
V
μA
pF
Dynamic Characteristics
Transition Time
tTRANS
VS1 = 8 V / 0 V, VS8 = 0 V / 8 V,
RL = 100 Ω, CL = 35 pF
160
-
-
Typ.
240
290
330
Max.
Break-Before-Make Time
tOPEN
VS1= VS8 = 8 V,
RL= 100 Ω, CL = 35 pF
95
-
-
Typ.
-
-
10
Min.
190
-
-
Typ.
Max.
Enable Turn-On Time
Enable Turn-Off Time
Charge Injection
tON(EN)
tOFF(EN)
QINj
VS1 = 8 V, VS2 - VS8 = 0 V,
RL = 100 Ω, CL = 35 pF
CINJ = 1 nF, RGEN = 0 Ω, VS = 6 V
Off Isolation
OIRR
Cross Talk
XTALK
Total Harmonic Distortion
THD
RL = 100 Ω, 6 Vp-p,
f = 20 Hz to 20 kHz
-3dB, Bandwidth
BW
RL = 50 Ω
Source Off Capacitance
Drain Off Capacitance
Drain On Capacitance
CD(on)
f = 1 MHz, VS = 6 V
290
330
-
-
Typ.
160
200
240
Max.
Typ.
pC
Typ.
dB
Typ.
%
Typ.
MHz
30
-
-
-
-
-63
-
-
0.05
-
-
DG1408
41
-
-
DG1409
62
-
-
18
-
-
DG1408
113
-
-
DG1409
59
-
-
DG1408
147
-
-
DG1409
93
-
-
CS(off)
CD(off)
250
105
-59
CL = 5 pF, RL = 50 Ω, 1 MHz
ns
Typ.
Typ.
pF
Typ.
Power Supply
Power Supply Range
Positive Supply Current
S14-1915-Rev. B, 22-Sep-14
GND = 0 V, V- = 0 V
4.5 / 24
VAX, VEN = 0 V, V+,
V+ = +13.2 V, V- = 0 V
11
VAX, VEN = 5 V,
V+ = 13.2 V, V- = 0 V
-
I+
Min. / Max.
9.5
9
Typ.
-
-
20
Max.
11
9.5
9
Typ.
-
40
Max.
V
μA
Document Number: 62957
4
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408, DG1409
www.vishay.com
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
PARAMETER
Analog Switch
Analog Signal Range
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, V- = -5 V
VAX, VEN = 2 V, 0.8 V
+25 °C
VANALOG
Drain-Source
On-Resistance
RDS(on)
On-Resistance Flatness
Rflat(on)
On-Resistance Matching
ΔRDS(on)
Source Off Leakage Current
IS(off)
Drain Off Leakage Current
ID(off)
Drain On Leakage Current
ID(on)
Digital Control
Input, High Voltage
Input, Low Voltage
VINH
VINL
Input Leakage
IIN
Digital Input Capacitance
Dynamic Characteristics
CIN
VS = ± 3.5 V, IS = -10 mA,
V+ = +4.5 V, V- = -4.5 V
V+ = +5.5 V, V- = -5.5 V,
VS = ± 4.5 V, VD = ± 4.5 V
V+ = +5.5 V, V- = -5.5 V,
VS = VD = ± 4.5 V
VIN = VGND or V+
Transition Time
tTRANS
VS1 = +3 V / -3 V, VS8 = -3 V / +3 V,
RL = 100 Ω, CL = 35 pF
Break-Before-Make Time
tOPEN
VS1= VS8 = 3 V,
RL= 100 Ω, CL = 35 pF
Enable Turn-On Time
tON(EN)
Enable Turn-Off Time
tOFF(EN)
VS1 = 3 V, VS2 - VS8 = 0 V,
RL = 100 Ω, CL = 35 pF
7
9
1.5
2.5
0.2
0.7
± 0.01
± 0.2
± 0.02
± 0.3
± 0.05
±1
-40 °C to
+85 °C
V- to V+
10
3
0.8
± 0.8
±3
±4
-40 °C to
+125 °C
MIN. /
TYP. /
MAX.
12
3
1
± 10
± 20
± 35
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
UNIT
V
Ω
nA
0.001
3.5
-
2
0.8
± 0.1
-
Min.
Max.
Typ.
Max.
Typ.
275
350
110
245
290
185
240
400
350
300
440
10
390
340
Typ.
Max.
Typ.
Min.
Typ.
Max.
Typ.
Max.
ns
V
μA
pF
Charge Injection
QINJ
CINJ = 1 nF, RGEN = 0 Ω, VS = 0 V
25
-
-
Typ.
pC
Off Isolation
Cross Talk
OIRR
XTALK
CL = 5 pF, RL = 50 Ω, 1 MHz
-60
-64
-
-
Typ.
dB
Total Harmonic Distortion
THD
RL = 100 Ω, 5 Vp-p, f = 20 Hz to 20 kHz
0.065
-
-
Typ.
%
-3dB, Bandwidth
BW
DG1408
40
-
-
DG1409
61
-
-
Typ.
MHz
18
-
-
DG1408
118
-
-
DG1409
61
-
-
DG1408
152
-
-
DG1409
95
-
-
Source Off Capacitance
Drain Off Capacitance
Drain On Capacitance
CS(off)
CD(off)
Negative Supply Current
S14-1915-Rev. B, 22-Sep-14
f = 1 MHz, VS = 0 V
CD(on)
Power Supply
Power Supply Range
Positive Supply Current
RL = 50 Ω
GND = 0 V
I+
I-
VAX, VEN = 0 V, V+,
V+ = +5.5 V, V- = -5.5 V
VAX, VEN = 3 V,
V+ = +5.5 V, V- = -5.5 V
VAX, VEN = 0 V, V+,
V+ = +5.5 V, V- = -5.5 V
0.5
0.7
0.0002
-
± 4.5 / ± 16.5
0.7
1
20
1.3
2
50
0.013
0.026
1
Typ.
Typ.
pF
Typ.
Min. / Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
V
μA
Document Number: 62957
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For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408, DG1409
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
7
6
V+/- = +/-5 V
V+/- = +/-7 V
5
V+/- = +/-5.5 V
V+/- = +/-10 V
4
3
V+/- = +/-12 V
2
V+/- = +/-13.5 V
1
V+/- = +/-15 V
IS = -10 mA
6
RON - On-Resistance (Ω)
V+/- = +/-4.5 V
7
RON - On-Resistance (Ω)
T = 25 °C
IS = -10 mA
+125 °C
5
-40 °C
+85 °C
+25 °C
4
3
2
1
V+/- = +/-15 V
V+/- = +/-16.5 V
0
0
-20
-15
-10
-5
0
5
10
15
-15
20
-10
-5
0
5
10
15
VD - Analog Voltage (V)
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
14
10
V+/- = +/-5.0 V
IS = -10 mA
9
T = 25 °C
IS = -10 mA
V+ = +5 V
12
RON - On-Resistance (Ω)
RON - On-Resistance (Ω)
8
7
6
5
4
+125 °C
3
-40 °C
+85 °C
2
V+ = +8 V
8
V+ = +10.8 V
V+ = +12 V
6
4
+25 °C
V+ = +13.2 V
V+ = +15 V
2
1
0
V+ = +18 V
V+ = +24 V
0
-5
-4
-3
-2
-1
0
1
2
3
4
0
5
5
10
15
20
VD - Analog Voltage (V)
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage
On-Resistance vs. Analog Voltage
25
300
10
V+ = 12 V
IS = -10 mA
9
250
+125 °C
8
+85 °C
ID(on)
150
+25 °C
7
V+/- = +/-15V
200
-40 °C
Leakage Current (pA)
RON - On-Resistance (Ω)
10
6
5
4
3
100
50
0
-50
-100
-150
2
IS(off)
ID(off)
-200
1
-250
0
-300
-15
0
1
2
3
4
5
6
7
8
9
10 11 12
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage
S14-1915-Rev. B, 22-Sep-14
vS = -VD
-10
-5
0
5
VD - Analog Voltage (V)
10
15
Leakage Current vs. Analog Voltage
Document Number: 62957
6
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG1408, DG1409
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
100 000
V+/- = +/-15 V
60
IS(OFF), VD = -10 V
ID(ON), VD = +10 V
100
-ID(ON), VD = -10 V
-ID(OFF), VD = -10 V
10
Leakage Current (pA)
Leakage Current (pA)
-IS(OFF), VD = +10 V
1000
ID(on)
40
20
0
-20
ID(off)
-40
ID(OFF), VD = +10 V
1
V+/- = +/-5 V
80
10 000
IS(off)
-60
-80
vS = -VD
0.1
- 60
-100
- 20
20
60
Temperature (°C)
100
140
-6
-5
Leakage Current vs. Temperature
-3
-2 -1 0
1
2
3
VD - Analog Voltage (V)
5
6
100
V+/- = +/-5.5 V
60
IS(OFF), VD = -4.5 V
ID(ON), VD = +4.5 V
100
10
-ID(OFF), VD = -4.5 V
Leakage Current (pA)
-IS(OFF), VD = +4.5 V
1000
ID(on)
40
20
0
-20
ID(off)
-40
IS(off)
-60
ID(OFF), VD = +4.5 V
1
V+ = +12 V
80
-ID(ON), VD = -4.5 V
10 000
-80
0.1
- 60
4
Leakage Current vs. Temperature
100 000
Leakage Current (pA)
-4
vS = -VD + 12V
-100
- 20
20
60
Temperature (°C)
100
0
140
1
Leakage Current vs. Temperature
2
3
4
5
6
7
8
VD - Analog Voltage (V)
9
10 11 12
Leakage Current vs. Analog Voltage
400
100 000
V+ = +12 V
350
tON(EN), tOFF(EN) - Switching Time (ns)
10 000
Leakage Current (pA)
-IS(OFF), VD = +10 V
IS(OFF), VD = 1 V
1000
ID(ON), VD = +10 V
100
ID(OFF), VD = +10 V
-ID(OFF), VD = 1 V
10
1
-ID(ON), VD = 1 V
0.1
- 60
V+ = +12 V, tON
300
V+/- = +/- 5 V, tON
250
200
V+/- = +/- 5 V, tOFF
150
100
50
V+ = +12 V, tOFF
V+/- = +/-15V, tON
V+/- = +/-15V, tOFF
0
- 20
20
60
Temperature (°C)
100
Leakage Current vs. Analog Voltage
S14-1915-Rev. B, 22-Sep-14
140
-50
0
50
100
150
Temperature (°C)
Switching Time vs. Temperature
Document Number: 62957
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
200
10
Loss
0
180
- 10
Capacitance (pF)
Loss, OIRR, XTALK (dB)
CD(on)
140
- 30
- 40
OIRR
- 50
XTALK
- 60
120
CD(off)
100
80
60
- 70
40
- 80
DG1408
- 90
- 100
105
106
107
Frequency (Hz)
108
CS(off)
20
0
-15
109
-10
-5
0
5
10
15
Analog Voltage (V)
Loss, OIRR, XTALK vs. Frequency
Capacitance vs. Analog Voltage
120
10
Loss
0
DG1409
V+/- = +/-15 V
100
- 10
CD(on)
V+/- = +/-15 V
- 20
Capacitance (pF)
Loss, OIRR, XTALK (dB)
V+/- = +/-15 V
160
V+/- = +/-15 V
- 20
- 30
- 40
OIRR
- 50
XTALK
- 60
80
60
CD(off)
40
- 70
- 80
- 90
105
106
107
Frequency (Hz)
108
CS(off)
20
DG1409
0
-15
- 100
109
-10
-5
0
5
10
15
Analog Voltage (V)
Loss, OIRR, XTALK vs. Frequency
Capacitance vs. Analog Voltage
160
0.10
140
0.09
0.08
120
0.07
100
THD + N (%)
QINJ - Charge Injection (pC)
DG1408
V+/- = +/-15 V
80
60
V+ = +12 V
0.06
0.05
0.04
V+/- = +/-5 V
0.02
20
0.01
0
-10
-5
0
V+ = +12 V, Vp-p=6 V
0.03
40
-15
V+/- = +/-5 V, Vp-p=5 V
5
10
15
0
10
V+/- = +/-15 V, Vp-p=15 V
100
1000
10 000
VS - Analog Voltage (V)
Frequency (Hz)
Charge Injection vs. Source Voltage
THD vs. Frequency
S14-1915-Rev. B, 22-Sep-14
100 000
Document Number: 62957
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.6
35
1.5
30
VIH
I+ - Supply Current (μA)
VT - Switching Threshold (V)
25 °C
1.4
VIL
1.3
1.2
1.1
25
20
V+/- = +/-16.5 V
15
V+ = +13.2 V
10
5
V+/- = +/-5.5 V
1.0
0
4
6
8
10
12
14
16
18
20
22
24
0
2
4
6
8
10
12
14
16
18
V+ - Supply Voltage (V)
VIN - (V)
Switching Threshold vs. Supply Voltage
Positive Supply Current vs. Switching Frequency
100 000
100 000
10 000
10 000
V+/- = +/- 16.5 V
I+ - Supply Current (µA)
I- - Supply Current (µA)
1000
100
10
1
0.1
0.01
0.001
101
1000
V+/- = +/- 5.5 V
V+/- = +/- 16.5 V
100
10
V+ = +13.2 V
1
V+/- = +/- 5.5 V
102
103
104
105
106
107
0.1
101
102
103
104
105
106
107
Input Switching Frequency (Hz)
Input Switching Frequency (Hz)
Negative Supply Current vs. Switching Frequency
Positive Supply Current vs. Input Logic Voltage
100 000
IGND - Supply Current (µA)
10 000
1000
100
V+/- = +/- 16.5 V
10
V+ = +13.2 V
1
0.1
101
V+/- = +/- 5.5 V
102
103
104
105
106
107
Input Switching Frequency (Hz)
Ground Current vs. Switching Frequency
S14-1915-Rev. B, 22-Sep-14
Document Number: 62957
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TEST CIRCUITS
+ 15 V
V+
A2
S1
A1
50 
A0
S8
DG1408
EN
± 10 V
VO
D
GND
+ 2.0 V
± 10 V
S2 - S7
V-
Logic
Input
50 %
0V
35 pF
100 
tr < 20 ns
tf < 20 ns
3V
- 15 V
VS1
90 %
Switch
Output
+ 15 V
VO
0V
V+
A1
± 10 V
S1b
A0
50 
DG1409 S4b
GND
tTRANS
tTRANS
± 10 V
S1 ON
S8 ON
VO
Db
EN
+ 2.0 V
90 %
VS8
S1a - S4a, Da
V35 pF
100 
- 15 V
Fig. 1 - Transition Time
+ 15 V
V+
S1
5V
EN
S2 - S8
A0
DG1408
A1
A2
GND
VO
D
V-
50
100 
Logic
Input
tr < 20 ns
tf < 20 ns
3V
50 %
0V
35 pF
tON(EN)
- 15 V
tOFF(EN)
0V
+ 15 V
Switch
Output
VO
V+
S1b
90 %
5V
VO
EN
A0
A1
GND
50
10 %
S1a - S4a, Da
S2b - S4b
DG1409
Db
V100 
VO
35 pF
- 15 V
Fig. 2 - Enable Switching Time
S14-1915-Rev. B, 22-Sep-14
Document Number: 62957
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+ 15 V
V+
EN
+ 2.4 V
All S and Da
tr < 20 ns
tf < 20 ns
3V
Logic
Input
50 %
+5V
0V
A0
DG1408
DG1409
A1
A2
GND
Db, D
VO
VO
V-
50 
100 
- 15 V
80 %
Switch
Output
35 pF
VO
tOPEN
0V
Fig. 3 - Break-Before-Make Internal
+ 15 V
Rg
V+
SX
Logic
Input
EN
OFF
ON
OFF
0V
A0
Channel
Select
3V
VO
D
A1
CL
1 nF
A2
GND
V-
VO
Switch
Output
VO is the measured voltage due to charge transfer
error Q, when the channel turns off.
- 15 V
QINJ = CL x
VO
Fig. 4 - Charge Injection
+ 15 V
+ 15 V
VIN
VS
VIN
V+
SX
VS
Rg = 50
S8
A0
D
A2
GND
EN
V-
A0
Rg = 50
RL
50
SX
S8
VO
A1
V+
S1
D
A1
A2
GND
EN
- 15 V
Off Isolation = 20 log
Fig. 5 - Off-Isolation
S14-1915-Rev. B, 22-Sep-14
V-
RL
50
- 15 V
VOUT
VIN
VO
Crosstalk = 20 log
VOUT
VIN
Fig. 6 - Crosstalk
Document Number: 62957
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+ 15 V
VS
+ 15 V
V+
S1
V+
S1
Rg = 50
Meter
A2
A0
D
VO
A1
A2
GND
EN
V-
Channel
Select
A0
RL
50
D
GND
- 15 V
Insertion Loss = 20 log
S8
A1
VOUT
EN
V-
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
- 15 V
VIN
Fig. 7 - Insertion Loss
Fig. 8 - Source Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62957.
S14-1915-Rev. B, 22-Sep-14
Document Number: 62957
12
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Package Information
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Vishay Siliconix
QFN 4x4-16L Case Outline
(5)
(4)
VARIATION 1
MILLIMETERS(1)
DIM
VARIATION 2
MILLIMETERS(1)
INCHES
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.85
0.95
0.029
0.033
0.037
0.75
0.85
0.95
0.029
0.033
0.037
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
0.35
0.010
0.014
0.25
0.35
0.010
2.2
0.079
0.087
2.5
2.7
0.098
A3
b
0.20 ref.
0.25
D
D2
0.30
0.008 ref.
4.00 BSC
2.0
2.1
0.012
0.20 ref.
0.157 BSC
0.083
0.30
4.00 BSC
2.6
e
0.65 BSC
0.026 BSC
0.65 BSC
E
4.00 BSC
0.157 BSC
4.00 BSC
E2
2.0
K
L
2.1
2.2
0.079
0.20 min.
0.5
0.6
0.083
0.087
2.5
0.008 min.
0.7
0.020
0.024
0.008 ref.
2.6
0.3
0.4
0.014
0.157 BSC
0.102
0.106
0.026 BSC
0.157 BSC
2.7
0.098
0.20 min.
0.028
0.012
0.102
0.106
0.008 min.
0.5
0.012
0.016
N(3)
16
16
16
16
Nd(3)
4
4
4
4
Ne(3)
4
4
4
4
0.020
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
ECN: S13-0893-Rev. B, 22-Apr-13
DWG: 5890
Revision: 22-Apr-13
Document Number: 71921
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Disclaimer

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
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Document Number: 91000