Materials Science:

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Graduate School of MC2
Micro-and Nanoprocessing Technologies, 7,5 points
LP 3; 2014/15
Course responsible; Ulf Södervall
Course objective: The objective for this course is to introduce the students to the basic and
advanced processing technologies that are used today in modern micro-and nano fabrication
cleanroom facilities. It will present a theoretical description of the fundamental principles of
physics and science as a base to understand different processing stages. This base is
important in order to give a knowledge e.g. for advanced decisions in processing
development and optimization. Applications of each process will be carefully discussed to
give an understanding of limitations, restrictions and features on each processing step.
Lecturer info: Several teachers are involved in this course. All lectures are presented by a
research scientist/lecturer that has a thorough knowledge and a long time experience from
processing on the actual processing step.
Lectures and exercises:
Course is held in LP III. Lectures 26 h. Tutorials 3x2 h.
Project: Each student should prepare a project work (including an oral presentation and
written report) related to the processing technologies as presented in the course.
Who can attend: Graduate/Masters students in Engineering Physics, Electronics, MC2,
Chemistry/Bio or industrial with a “relevant background”.
Content of the course: The course covers micro and nano fabrication technologies
including cleanroom construction technology, wet etching, dry etching, optical and e-beam
lithography, ion implantation, evaporation, front-end, back-end, sputter deposition, thermal
processing.
Examination Requirements: A completed project work (including oral presentation and
written report), home assignments and review work. The student should be present on at least
80% percent of the lectures and tutorials.
Language of instruction
Lectures are given in English
Literature: Fabrication Engineering at the Micro and Nanoscale. Ed. Stephen A. Campbell,
Oxford University Press, 2007, Price: ca 600 SEK. It is usually available at Bokus internet
store or AdLibris or Amazon. However, the Campbell’s 2002 edition is also still OK .
Micro-and Nanoprocessing Technologies
Lecture:
Day, date
Time
and place
Content
Thursday 20/1
10.15-17.00
Clean room introduction and safety
course (for new users of the Nanofab lab)
Lecture 1;
Monday 19/1
13.15-15.00
D209, MC2
Direktorn
Course presentation
Lecture 2;
Wednesday 21/1
Lecture 3;
Monday 26/1
13.15-15.00
D209, MC2
Direktorn
13.15-15.00
D209, MC2
Direktorn
Introduction to microfabrication;
Unit processes/technologies
Roadmap of the course
Semiconductor substrates
Phase diagrammes/solid solubility
Crystallography and crystal structure
Crystal defects
Crystal growth and preparation
Diffusion:
Diffusion theory
Diffusion coefficients
Diffusion in SiO2, systems
Thermal oxidation:
Models of oxidation
Structure of SiO2,doping,defects,
Alternative insulators
Ion Implantation:
Systems,scattering,channeling,lattice damage
shallow junctions, buried dielectrics
Rapid Thermal processing:
Radiation,absorption, design
Stress, activation
applications
Technology Computer Aid Design –
TCAD software by Silvaco
Section
Lecturer
Ulf
Södervall
Ulf
Södervall
1.1-1.2
1.3
2.1
2.2
2.3
2.4-2.7
3.1-3.4
3.5
3.7,3.8
3.9
4.1-4.3
4.4, 4.7
4.8
Ulf
Södervall
5.1-5.5
5.6-5.8
6.1-6.3
6.4-6.5
6.6-6.8
Lecture notes
Hans
Hjelmgren
Optical litography:
Lithography,diffraction, coherence
Contact/proximity/projection
Surface reflections/standing waves
Photoresists:
7.1-7.4
7.5-7.6
7.8-7.9
Piotr
Jedrasik
Types,materials,reactions
8.1-8.3
ATHENA Process Simulation Framework
enables process and integration engineers to
develop and optimize semiconductor
manufacturing processes. ATHENA provides an
easy to use, modular, and extensible platform for
simulating ion implantation, diffusion, etching,
deposition, lithography, oxidation, and
silicidation of semiconductor materials.
ATLAS Device Simulation Framework enables
device technology engineers to simulate the
electrical, optical, and thermal behavior of
semiconductor devices.
Lecture 4;
Wednesday 28/1
13.15-15.00
D209, MC2
Direktorn
Lecture 5;
Friday 30/1
13.15-15.00
D209, MC2
Direktorn
Monday 2/2
Tutorial 1
Monday 2/2
Contrast/resolution
Developing/exposure effects
Advanced resists,
8.4-8.5
8.6-8.7
8.8
Non-Optical litographic techniques;
Interaction Radiation/matter.
Direct write EBL
(X-ray sources/systems/masks/projection)
SCALPEL/e-beam resists
9.1
9.2-9.3
9.4-9.7
9.8-9.8
Piotr
Jedrasik
Separate
document
Göran
Alestig
Deadline for submitting project
abstract
13.15-15.00
D209, MC2
Direktorn
Lecture 6;
Wednesday 4/2
13.15-15.00
D209, MC2
Direktorn
Lecture 7;
Monday 9/2
13.15-15.00
D209, MC2
Direktorn
Lecture 8
Wednesday 11/2
13.15-15.00
D209, MC2
Direktorn
Lecture 9
Friday 13/2
13.15-15.00
D209, MC2
Direktorn
Tutorial 2
Monday 16/2
13.15-15.00
D209, MC2
Direktorn
Lecture 10
Wednesday 18/2
13.15-15.00
D209, MC2
Direktorn
Process oriented problem solving;
1
(Diffusion, Oxidation, Lithography etc)
Vacuum science and plasmas:
Kinetic theory,conductance, pumps
DC/RF glow discharge, plasmas
Physical deposition: evaporation and
sputtering:
Phase diagrammes, rates,,coverage
Sputtering
Plasma sputtering
Sputter applications
Pulsed Laser Deposition (PLD);
10.1-10.4
10.5-10.7
12.1-12.5
12.6-12.8
12.9-12.10
12.11-12.13
The PLD method of thin film growth involves
evaporation of a solid target in an Ultra High
Vacuum chamber by means of short and highenergy laser pulses. In a typical PLD process, a
researcher places a ceramic target in a vacuum
chamber. A pulsed laser beam vaporizes the
surface of the target, and the vapor condenses on
a substrate
Chemical Vapor Deposition:
Chemical equilibrium, gas flow
Simple CVD systems, dielectrics,
Plasma enhanced CVD, Metal CVD
Epitaxial Growth:
Wafer cleaning
Thermodynamics VPE, surface reactions
Dopant incorp.,defects
Heterostructure
MOCVD
MBE
2
Mats
Hagberg
Mats
Hagberg
Andrei
Vorobiev
13.1-13.3
13.4-13.6
13.7-13.8
Mahdad
Sadeghi
14.1
14.2-14.3
14.4-14.6
14.8
14.9
14.11
Process oriented problem solving;
“Thin film growth, deposition techniques”
Separate
document
Göran
Alestig
Etching and wet processing:
Wet etching
Wafer Cleaning
Liftoff
Plasma (dry) etching
Ion Milling
Reactive ion etching, damage, high density
plasma
11.1
14.1
11.9
11.3-11.4
11.5
11.6-11.8
Göran
Alestig
Lecture 11
Monday 23/2
13.15-15.00
D209, MC2
Direktorn
Micromachining
( MEMS, Microfluidics, etc)
Simulation of etch profiles; “”””
Lecture 12
Wednesday 25/2
13.15-15.00
D209, MC2
Direktorn
Device isolation, contacts and
metallisation:
Junction/oxide isolation
Trench isolation, SOI
Schottky contacts, Ohmic contacts
Metallisation
CMP
Device technologies;
CMOS, GAAs MESFET, GAAs MMIC
Separate
material
15.1
15.3-15.4
15.6-15.8
15.9
11.2
?????
Göran
Alestig
Chp 16-18
and Silicon Bipolar technologies are described
Lecture 13
Monday 2/3
Tutorial 3
Wednesday 4/3
13.15-15.00
D209, MC2
Direktorn
13.15-15.00
D209, MC2
Direktorn
Friday 13/3
Lecture 14
Friday 20/3
13.15-16.00
D209, MC2
Direktorn
SPM/AFM/SEM Metrology and nano
manipulation ;
This lecture provides a general introduction to
nano-device characterision. The concepts,
instrumentation, and applications of the rapidly
expanding field of scanning probe microscopy
(SPM). AFM and STM will be covered
extensively. The theory of operation for both
imaging and spectroscopy will be addressed, with
attention paid to instrumental artifacts and
methods to avoid them.
3
Process oriented problem solving;
“Dry and wet etching, Technologies, etc”
Dead-line to hand in the final project
report
Project presentations
Separate
material
Piotr
Jedrasik
Göran
Alestig
OBJECTIVE and ASSESSMENT CRITERIA for Project work
Besides a series of lectures on a number of processing steps and technologies following the
text book, a compulsory project work is included in the course.
The objective of the project is to give the student a possibility to go deeper in the
understanding of a special processing step (experimentally or theoretically) but also to get
more experienced in process and project planning. It is primarily expected that the student
should use a relevant problem within his regular Ph D work . It is recommended that students
work individually on each project, but it is also allowed to be a group of two students in case
the project is suitable for both.
-and nano
processing steps. The results must be scrutinized and presented orally as well as in a written
report
The examination of the project work demands three compulsory parts;
a) A written project report.
b) An oral presentation of the project work.
c) A “review” of another project report; Each student should critically read the report from
another group and give at least 3 questions during the oral session about that work. The
review questions and answers should be written down and handed in.
PROJECT ABSTRACT PROPOSAL (deadline 2th February)
The topic of the project work should be described, including a preliminary time schedule.
PROJECT REPORT
(deadline 13th of March)
Describe the results of the work in a written report. The project report should have a structure
typical for a scientific conference paper (poster). This means a report on 4 pages with double
column, or 8 pages on standard format one column text font 10, including a relevant number
of figures of appropriate size.
It is recommended to hand in the report electronically as a PDF file. It is up to you whether
you like to include images, diagrams etc in the running text, or to put those data as a
supplement. However, it is recommended to use compressed formats for pictures, etc.
The report should focus on the experimental/modelling results including a short description
of the techniques that were used. They should be described by your own words and showing
the general layout and also pinpointing parameters that are critical for the outcome of the
processing.
Oral presentation;
The project work should be presented by the student in an oral presentation, at the final
“mini-conference”. All students in the presentation group should contribute orally. It should
be a 12 minutes presentation followed by a 3 minutes discussion of each project. The 3
minutes is basically the time for asking questions from the reviewers but also the audience is
recommended to participate.
The oral presentation should focus on presenting the results of the study. A critical
description of the possibilities and difficulties especially for the scope of your work
encountered is interesting. But also general impressions are valuable. It is not critically
necessary to make a very deep description of the processing equipments and techniques
unless this information is important for the understanding of the scope of the study.
If anyone likes to use the Data/Video projector for a PowerPoint presentation, it is Ok.
However we cannot supply with the laptop computer itself, so you need to bring that
yourself.
Review report;
Each student will receive a report from another group. They will be handed out as soon as
received by the course responsible. The review report should cover a few questions about the
content in the results/discussion part of the report. Each student in the group should prepare
at least three questions to be discussed during the oral presentations.
Each student should make a short written report of the questions and the answers, and to be
handed in to the course responsible (Ulf Södervall) e.g. by email afterwards.
Assessment criteria:
The grade will be set according to the output of each student in these three components as
mentioned above and including also the home assignments. The assessment will include the
evaluation of the total sum of work produced by the student during the course. It should be
stated clearly which parts of the project work that each student has contributed to. The
student should be present on at least 80% percent of the lectures and tutorials
Graduate students; Grades of ”passed” or ”non-passed” will be given for Ph. D. students. To
reach level “Passed”, it requires the corresponding grade of 4 in undergraduate education.
Results are reported to the central administration where they are registered
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