KSD1406
KSD1406
Low Frequency Power Amplifier
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1015
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
60
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
0.5
A
PC
Collector Dissipation (TC=25°C)
25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
60
V
7
V
3
A
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = 50mA, IB = 0
Min.
60
Typ.
Max.
Units
V
ICBO
Collector Cut-off Current
VCB = 60V, IE = 0
100
µA
IEBO
Emitter Cut-off Current
VEB = 7V, IC = 0
100
µA
h FE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 0.3A
0.4
1
VBE(on)
Base-Emitter ON Voltage
VCE = 5V, IC = 0.5A
0.7
1
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 0.5A
3
MHz
Cob
Output Capacitance
VCB = 10V, f = 1MHz
70
pF
tON
Turn ON Time
0.8
µs
tSTG
Storage Time
1.5
µs
tF
Fall Time
VCC = 30V, IC = 1A
IB1 = -IB2 = 0.2A
RL = 30Ω
0.8
µs
60
20
300
V
V
hFE1 Classification
Classification
O
Y
G
hFE1
60 ~ 120
100 ~ 200
150 ~ 300
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1406
Typical Characteristics
1000
4
IB = 90mA I = 80mA
B
IB = 70mA
IB = 60mA
IB = 50mA
3
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
VCE = 5V
IB = 40mA
IB = 30mA
2
IB = 20mA
IB = 10mA
1
IB = 0mA
0
0
1
2
3
4
5
6
7
100
10
1
0.01
8
0.1
V CE[V], COLLECTOR-EMITTER VOLTAGE
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
4
10
IC = 10 IB
VCE = 5V
IC[A], COLLECTOR CURRENT
VCE(sat)[V], SATURATION VOLTAGE
1
1
0.1
0.01
0.001
0.1
1
3
2
1
0
0.0
10
0.4
IC[A], COLLECTOR CURRENT
0.8
1.2
1.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Voltage
10
35
30
IC(max)
1S
PC[W], POWER DISSIPATION
S
0m
ms
S
1m
10
10
DC
1
VCEOMAX
IC[A], COLLECTOR CURRENT
ICmax(pulse)
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
100
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
KSD1406
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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INTERNATIONAL.
As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E