SB29003 High Voltage Transistor
SB29003
High Voltage Transistor
1
SOT-223
Marking: 5463003
1.Base
Absolute Maximum Ratings
Symbol
2.Collector
3.Emitter
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
300
mA
PC
Collector Dissipation (TC = 25°C)
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
BVCBO
Collector-Base Breakdown Voltage
BVCER
BVEBO
Conditions
Min.
Max
Units
IC = 100µA, IB = 0
500
Collector-Emitter Breakdown Voltage *
IC = 1mA, IB = 0
400
V
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
6
V
ICBO
Collector Cut-off Current
VCB = 400V, IE = 0
0.1
µA
ICES
Collector Cut-off Current
VCE = 400V, IB = 0
0.5
µA
IEBO
Emitter Cut-off Current
VEB = 4V, IC = 0
0.1
µA
hFE
DC Current Gain *
VCE = 10V, IC = 1mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 50mA
VCE = 10V, IC = 100mA
40
50
45
40
V
200
VCE(sat)
Collector-Emitter Saturation Voltage *
IC = 1mA, IB = 0.1mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.4
0.5
0.75
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage *
IC = 10mA, IB = 1mA
0.75
V
Cob
Output Capatitance
VCB = 20V, IE = 0, f = 1MHz
7
pF
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
©2004 Fairchild Semiconductor Corporation
SB29003 Rev. A
1
www.fairchildsemi.com
Figure 1. DC Current Gain
Figure 2. Capacitance
1000
160
o
VCE=10V
Ta=25 C
f=1MHz
Cib[pF],Cob[pF], CAPACITANCE
140
hFE, DC CURRENT GAIN
120
100
80
60
40
20
0
100
Cib
10
Cob
-20
-40
1
10
100
1000
1
0.1
10000
1
IC[mA], COLLECTOR CURRENT
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. On Voltage
Figure 4. Collector Saturation Region
0.5
1.0
VCE[V] COLLECTOR EMITTER VOLTAGE
o
Ta=25 C
0.8
VBE(sat) @IC/IB=10
[V], VOLTAGE
10
0.6
VBE(on) @VCE=10V
0.4
0.2
0.0
0.1
VCE(sat)@IC/IB=10
1
10
100
o
IC=1mA
IC=50mA
Ta=25 c
0.4
0.3
0.2
0.1
0.0
10
1000
IC=10mA
100
1000
10000
100000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 5. High Frequency Current Gain
hFE, SMALL SIGNAL CURRENT GAIN
100
VCE=10V
f=10MHz
o
Ta=25 C
10
1
0.1
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
2
SB29003 Rev. A
www.fairchildsemi.com
SB29003 High Voltage Transistor
Typical Performance Characteristics
SB29003 High Voltage Transistor
Mechanical Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
10
+0.10
0.25 –0.05
0°~
7.00 ±0.30
(0.60)
0.70 ±0.10
(0.95)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
Dimensions in Millimeters
3
SB29003 Rev. A
www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I14
4
SB29003 Rev. A
www.fairchildsemi.com
SB29003 High Voltage Transistor
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