6 Nanotechnology
6.
N
t h l
testing
t ti
5. Semiconductor device testing
4. Waveform & spectrum measurement
3 Frequency
3.
F
& phase
h
measurementt
2. Impedance measurement
1. Current & voltage measurement
Methodology of testing
Professor Hiroshi Mizuta
Nano Group
hm2@ecs.soton.ac.uk
Room 3010, #53
- Methodology of testing -
Experimental Research
M h d l
Methodology
II.3
II 3
1 December 2009
Light
Velocity
Smell
Current
Force
Voltage
Humidity
Sugar
content
1.
2
2.
3.
4
4.
Pi
Pico-ammeter
t
(Keithley 6487)
El t
Electrometer
t
(Keithley 6514)
Digital multimeter (DMM)
Pico-ammeter
Electrometer
Vib ti capacitor
Vibrating
it electrometer
l t
t
Mass
Radiation
Frequency
q
y
Magnetic
field
Electric field
Vibrating capacitor
electrometer
(Trek 320C)
DMM (Agilent 34401)
1. Current & voltage measurement
Sound
Time
Dimension
Impedance
Temperature
Pressure
A variety of physical quantities to measure
Methodology of testing
DC resistance
AC
current
DC
current
AC voltage
g
DC voltage
Logic
circuit
Digital
display
I–V
conversion
AC – DC
conversion
R–V
conversion
I–V
conversion
Keithley picoammeter 6485
http://www.keithley.com/
• employs feed-back picoammeter circuitry
• measures current from
20 fA to 20 mA
• 10 fA resolution
• <200 μV burden voltage
http://www.keithley.com/
When do you need a picoammeter?
Measuring low DC currents often demands a lot more than a digital
multimeter (DMM) can deliver. Generally, DMMs lack the sensitivity required
to measure currents less than 100nA. Even at higher currents, a DMM’s
input voltage drop (voltage burden) of hundreds of millivolts can make
accurate
t currentt measurements
t impossible.
i
ibl Electrometers
El t
t
can measure
low currents very accurately, but the circuitry needed to measure extremely
low currents, combined with functions like voltage, resistance, and charge
measurement can increase an electrometer
measurement,
electrometer’s
s cost significantly.
significantly
A/D
converter
All input signals are converted
to DC voltage
g
A/D
converter
AC – DC
conversion
Input
signal
convertor
Pico-ammeter
Pico
ammeter and electrometer
Input
Input
DC voltage
lt
DC current
AC voltage
AC current
Resistance
Digital Multimeter (DMM)
voltage divider
current divider
Rs
I
R3
+
-
Differential
amplifier
vout
http://www.keithley.com/
Keithley DMM 2100
Shunt ammeter circuitry
Keithley Low Level Measurements Handbook 6th Edition
prohibited by noise
Low level DC measurement limit
R2
R1
R4
Digital Multimeter (DMM)
i = dQ/dt = Vd・dC/dt
Vibrating capacitor
electrometer
(T k 320C)
(Trek
Wien bridge
Measure an known
capacitance
it
with
ith a
series resistance
Maxwell bridge
measure an unknown
i d t
inductance
with
ith loss
l
Schering bridge
measure an unknown
capacitance
it
with
ith loss
l
„ Various AC bridges
z Surface charge measurement : high Vd but small Q
gp
probe electrode g
generates the output
p
z A vibrating
voltage V0 proportional to the surface voltage Vd
device
AC amplifier
lifi
Non contacting electrostatic voltmeter
Non-contacting
Vibrating capacitor electrometer
Z4
∴ In equilibrium, I1 = I2, we have the relationship Z1/Z2 = n1/n2
E1 = Z1I1, E2 = Z2I2
E1, E2 are proportional to the number of turns, n1, n2 : E1/E2 = n1/n2
Z1, Z2 are a know and an unknown impedance, respectively
number
of turns
number
of turns
Z3
Galvanometer
AC power supply
Z1
Z2
An AC bridge with two arms replaced by
induction coils
„ Transformer bridge
Z1 , Z 2 , Z 3 , Z 4
θ1 , θ 2 , θ 3 , θ 4 : Phase angles of
θ1 + θ 3 = θ 2 + θ 4
Z1 Z 3 = Z 2 Z 4
Z1 Z 3 = Z 2 Z 4
E ilib i
Equilibrium
condition
diti
9 AC power supply
9 Galvanometer
9 Four impedance Z1, Z2, Z3, Z4
„ AC bridge for LCR measurement
2. Impedance measurement
S11
S12
S21
Mag
4. Time-domain
Time domain
characterization
Both magnitude
g
&
phase measured
After the slide by
Base
Emitter
Collector
Measured
Actual
E
Error
3. Complex values
Smith chart
Time
needed for de
device
ice
modeling
High-frequency transistor model
5. Vector-error correction
2 C
2.
Complex
l iimpedance
d
needed to design
matching circuits
1. Complete
p
characterization of
linear networks
Network Analyzer
http://www.home.agilent.com/agilent/home.jspx?cc=US&lc=eng
S22
A self
self-balancing
balancing transformer bridge
A il t LCR M
Agilent
Meter
t 4263B
LCR Meter
Af http://en.wikipedia.org/wiki/
After
h //
iki di
/ iki/
Coaxial cable
S12 ⎤ ⎡ a1 ⎤
S 22 ⎥⎦ ⎢⎣a2 ⎥⎦
S matrix
⎡ b1 ⎤ ⎡ S11
⎢b ⎥ = ⎢ S
⎣ 2 ⎦ ⎣ 21
http://www.home.agilent.com/agilent/home.jspx?cc=US&lc=eng
• Microwave vector network analyzer for 10 MHz up to 67Ghz
• Frequency
q
y extendable up
p to 500GHz by
y adding
g optional
p
banded MW modules
Agilent microwave network analyzer E8361C
Network Analyzer
DUT
directional coupler
A network analyzer is used to analyze the properties of electrical
networks, especially those properties associated with the reflection
and transimission of electrical signals known as scattering
parameters (S-parameters). Network analyzers are used mostly at
high frequencies; operating frequencies can range from 9 kHz to
110 GHz.
GHz
two-terminal
AC signal source
pair network
Network Analyzer
Waveform
reshaping
circuit
i it
Gate
Control
circuit
Gate opening time T
Gate circuit
1/T
Counter
C
t
circuit
9 Resolution is determined by the frequency of the time standard
pulse generator.
9 Opens the gate for a period T of the input signal, counts the number
of pulses to measure T and then determines f by 1/T
1/T.
I
Input
signal
i
l
Time standard
pulse generator
„ Reciprocal count method
Frequency counter
„ Lissajous figure method
„ Frequency counter method
„ Heterodyne method
Phase
„ F
Frequency counter
t (direct
(di t & reciprocal)
i
l)
„ Microwave frequency counter
„ Resonant frequency meter
Frequency
3. Frequency & phase
measurementt
B
Gate
Control
circuit
Gate circuit
D
Counter
circuit
http://www.home.agilent.com/agilent/home.jspx?cc=US&lc=eng
z Universal Frequency Counter, 10 digit/sec
z Two 225 MHz input channels, plus optional third channel up to 12.4 GHz
z 10 digits per second
second, 500 ps time interval resolution
53131A Universal Frequency Counter
Frequency counter
9 Resolution is determined by the frequency of the
input signal.
9 For the gate opening time T of 1 sec, the number of
counted pulses shows the frequency directly.
Gate opening
p
g
time T
C
Waveform
reshaping
circuit
Time standard
pulse generator
A
„ Direct count method
Frequency counter
９０°
„ Spectrum
S
t
analyzer
l
Spectrum
„ Analogue
A l
oscilloscope
ill
„ Digital storage oscilloscope
„ Logic analyzer
Waveform
Agilent 204-channel
204 channel
Logic Analyzer 16806A
Tektronix MSO7000
１８０°
ex (t )
Horizontal (X)
Agilent Spectrum
Analyzer E4440A
Vertical (Y)
１３５°
4. Waveform & spectrum
measurementt
θ : ４５°
e y2
ex2 2ex e y
−
cos
θ
+
= sin 2 θ
2
2
2
a
a
a
e y (t ) = a sin(ωt + θ )
e y (t )
Lissajous figure method
ex (t ) = a sin ωt
„
Phase measurement
Frequency counter method
CCLK
× 360°
C period
Clock
signal
Reshaped
R
h
d
signal 2
Reshaped
signal 1
Signal 1 Signal 2
time
22
time
time
time
time
i
http://jp.home.agilent.com/JPjpn/nav/-11143.0/home.html
http://www.lecroy.com/japan/products/probes/logic/default.asp
¾ Converts the captured data into various diagrams such as timing
diagrams,
g
p
protocol decodes, state machine traces.
¾ Displays signals on multiple nodes in a digital circuit that have too many
(
(over
one hundred)
h d d) channels
h
l tto b
be examined
i d with
ith an oscilloscope.
ill
Logic analyzer
Agilent 8508A Vector Voltmeter (VVM)
θ=
Two signals controls opening and
closing the gate, and the number of
th pulses
the
l
iis counted
t d tto d
determine
t
i
the phase difference.
„
Phase measurement
BPF
Y
X-axis
http://www.home.agilent.com/agilent/home.jspx?cc=US&lc=eng
Agilent E4448A, 3 Hz – 50 GHz
frequency
http://www.home.agilent.com/agilent/home.jspx?cc=US&lc=eng
Semiconductor device analyzer
z Drivers for all of the
popular semiautomatic
wafer probers
z SMU Measurement
Resolution: Voltage: 2 µV,
Current: 10 fA
z Agilent B1500 bench top
parameter analyzer
p
y
5. Semiconductor device testing
LO
mixer
time
MSA-400 Micro System Analyzer
„Light source LED, 770 nm
„Beam diameter (FWHM) ~0.9 μm
„Out-of-Plane measurement
Max vibration frequency 20MHz
Displacement resolution <0.1 pm/√Hz
„In-Plane measurement
Displacement resolution 1 nm
Time resolution 100 nsec (strobe exp. time)
Measure In-Plane Motion & Vibration
by Stroboscopic Video Microscopy
Out-of-Plane Vibrations
by Scanning Laser-Doppler Vibrometry
Measuring 3-D MEMS
y
& Topography
p g p y
Dynamics
5. Semiconductor device testing
z Microwave vector network
analyzer for frequency up to
67GHz (optional to 500GHz)
z Pattern recognition coupled with
auto focusing
z C
Cascade
d 8 iinch
h semi-automatic
i t
ti
probe station suitable for RF and
DC parametric measurements
Semiautomatic RF probe station
Spectrum analyzer measures and monitors complex RF and
microwave signals in a frequency domain up to a few tens GHz
GHz.
Fourier
ttransformation
f
ti
5. Semiconductor device testing
magnitu
ude
Spectrum analyzer
magnitu
ude
More characterization facilities:
http://www.southampton-nanofab.com/characterisation.php
„ Lakeshore EMTTP4 prober:
x Temperature 5K-475K
x 0.55T
0 55T magnett (h
(horizontal)
i
t l)
„ Cryogenic Cryo-Free He3 cryostat:
x Temperature
T
t
d
down
tto 300mK
300 K
x 12T CF superconducting magnet
x 360 degree sample rotation
x Optical access
Cryogenic
y g
testing
g
6. Nanotechnology testing
9 Spatial resolution <0.9nm
9 High depth of focus
9 High material contrast
9 Rutherford backscattering analysis: element identification
9 Nanoengineering
●17 Nov.
Planning an experimental research (hm2)
●24 Nov.
Setting up of an experiment (hm2)
Setting-up
●1 Dec.
Methodology of testing (hm2)
●8 Dec.
Experimental data analysis (hm2)
●5 Jan. 2010
Virtual instrumentation (yt2)
Schedule
„ Cryogenic SPM
x Nanonics Cryoview 2000 (down to 10K)
x Small samples
x Optical charn
charn. - NSOM
x Integrated with Raman: tip enhanced
Raman spectroscopy (TERS)
„ High resolution & multi-mode SPM
g resolution SPM, electrical charn.
x Veeco High
x Small samples
x Usual modes plus magnetic force, scanning
tunneling, scanning capacitance, conductive,
Kelvin force
Scanning Probe Microscope (SPM)
Zeiss Orion He ion microscope
Image of CNTs 100nm bar
6. Nanotechnology testing
6. Nanotechnology testing