TS27L2C,I,M
LOW POWER CMOS
DUAL OPERATIONAL AMPLIFIERS
..
.
..
ULTRA LOW CONSUMPTION : 10µA/op
OUTPUT VOLTAGE CAN SWING
GROUND
EXCELLENT PHASE MARGIN ON
CAPACITIVE LOADS
STABLE AND LOW OFFSET VOLTAGE
THREE INPUT OFFSET VOLTAGE
SELECTIONS
TO
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
ORDER CODES
Package
Temperature
Range
Part Number
o
o
N
D
0 C, +70 C
●
●
TS27L2I/AI/BI
-40oC, +125oC
●
●
TS27L2M/AM/BM
-55 C, +125 C
●
●
TS27L2C/AC/BC
o
o
Example : TS27L2ACN
DESCRIPTION
The TS272 series are low cost, low power dual operational amplifiers designed to operate with single
or dual supplies. These operational amplifiers use
the SGS-THOMSONsilicon gate CMOS process allowing an excellent consumption-speed ratio.
These series are ideally suited for low consumption
applications.
Threepower consumptionsare available allowing to
have always the best consumption-speedratio :
● ICC = 10µA/amp. : TS27L2
(very low power)
● ICC= 150µA/amp. : TS27M2
(low power)
● ICC= 1mA/amp. :
TS272
(high speed)
These CMOS amplifiers offer very high input impedance and extremely low input currents. The major
advantageversus JFET devices is the very low input
currents drift with temperature
(see figure 2).
October 1997
PIN CONNECTIONS (top view)
1
8
2
-
3
+
4
7
-
6
+
5
1 - Output 1
2 - Inverting Input 1
3 - Non-inverting Input 1
4 - V CC 5 - Non-inverting Input 2
6 - Inverting Input 2
7 - Output 2
8 - V CC +
1/8
TS27L2C,I,M
BLOCK DIAGRAM
VCC
Current
source
xI
Input
differential
Second
stage
Output
stage
Output
VCC
E
E
MAXIMUM RATINGS
Symbol
Value
Unit
Supply Voltage - (note 1)
18
V
Vid
Differential Input Voltage - (note 2)
±18
V
Vi
Input Voltage - (note 3)
-0.3 to 18
V
IO
Output Current for VCC+ ≥ 15V
±30
mA
Iin
Input Current
±5
mA
VCC+
Toper
Tstg
Parameter
o
Operating Free-Air Temperature Range
TS27L2C/AC/BC
TS27L2I/AI/BI
TS27L2M/AM/BM
0 to +70
-40 to +125
-55 to +125
C
Storage Temperature Range
-65 to +150
o
C
N ot es : 1.All vol tage val ues, except di ffer ential vol tage, are wi th respect to network ground t erminal.
2.Differ enti al vol tages are at the non-inver ti ng input termi nal with r espect to the i nvert ing input termi nal.
3.The magnitude of t he input and the output voltages must never exceed the magnitude of the posit ive supply voltage.
OPERATING CONDITIONS
Symbol
VCC+
Vicm
2/8
Parameter
Supply Voltage
Common Mode Input Voltage Range
Value
Unit
3 to 16
V
+
VCC
V
0 to
- 1.5
T 20
T 19
T 17
T 24
T21
T 18
R2
T 25
VCC
T 22
T 23
T 26
T 29
T 28
T 27
Input
T3
T1
T5
VCC
T4
T2
C1
Input
R1
T7
T6
T9
T8
T 13
T11
T 10
T 14
T 12
T16
Output
T 15
TS27L2C,I,M
SCHEMATIC DIAGRAM (for 1/2 TS27L2)
3/8
TS27L2C,I,M
ELECTRICAL CHARACTERISTICS
VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified)
Symbol
Parameter
TS27L2C/AC/BC
Min.
Vio
Input Offset Voltage
VO = 1.4V, Vic = 0V
Tmin. ≤ Tamb ≤ Tmax.
DV io
Iio
Iib
VOH
VOL
Avd
GBP
CMR
SVR
ICC
Io
Isink
SR
Max.
1.1
0.9
0.25
10
5
2
12
6.5
3
Min.
Typ.
Max.
1.1
0.9
0.25
10
5
2
12
6.5
3.5
Unit
mV
TS27L2C/I/M
TS27L2AC/AI/AM
TS27L2BC/BI/BM
TS27L2C/I/M
TS27L2AC/AI/AM
TS27L2BC/BI/BM
Input Offset Voltage Drift
0.7
0.7
Input Offset Current - (note 1)
Vic = 5V, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
1
1
Input Bias Current - (note 1)
Vic = 5V, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
1
High Level Output Voltage
Vid = 100mV, R L = 1MΩ
Tmin. ≤ Tamb ≤ Tmax.
pA
100
200
pA
1
150
300
V
8.8
8.7
9
8.8
8.6
9
mV
Low Level Output Voltage
Vid = -100mV
Large Signal Voltage Gain
Vo = 1V to 6V, RL = 1MΩ, Vic = 5V
Tmin. ≤ Tamb ≤ Tmax.
50
50
V/mV
60
45
100
60
40
100
MHz
Gain Bandwidth Product
Av = 40dB, RL = 1MΩ, C L = 100pF
fin = 100kHz
0.1
0.1
Common Mode Rejection Ratio
Vo = 1.4V, Vic = 1V to 7.4V
65
80
65
80
Supply Voltage Rejection Ratio
+
VCC = 5V to 10V ,Vo = 1.4V
60
80
60
80
dB
dB
Supply Current (per amplifier)
Av = 1, no load, Vo = 5V
Tmin. ≤ Tamb ≤ Tmax.
10
Output Short Circuit Current
Vid = 100mV, V o = 0V
60
60
Output Sink Current
Vid = -100mV, V o = VCC
45
45
0.04
0.04
Slew-Rate at Unity Gain
R L = 1MΩ, CL= 100pF, Vi = 3 to 7V
o
µV/ C
15
17
10
15
18
µA
mA
mA
V/µs
∅m
Phase Margin at Unity Gain
Av = 40dB, RL = 1MΩ, C L= 100pF
45
45
Kov
Overshoot Factor
30
30
%
en
Equivalent Input Noise Voltage
f = 1kHz, RS = 100Ω
68
68
nV
√

Hz
Channel Separation
120
120
dB
VO1/VO2
N ote :
4/8
Typ.
TS27L2I/AI/BI
TS27L2M/AM/BM
Degrees
1.Maxi mum val ues includi ng unavoidable i naccuracies of t he industr ial t est.
TS27L2C,I,M
TYPICAL CHARACTERISTICS
Figure 1 : Supply Current (each amplifier)
versus Supply Voltage
Figure 2 : Input Bias Current versus Free Air
Temperature
15
100
TAMB = 25 C
AV = 1
VO = VCC / 2
INPUT BIAS CURRENT, IIB (pA)
SUPPLY CURRENT, ICC (µ A)
20
10
5
VCC = 10V
V i = 5V
10
1
0
4
8
12
25
16
Figure 3a : High Level Output Voltage versus
High Level Output Current
OUTPUT VOL TAGE, VOH (V)
OUTPUT VOLTAGE, VOH (V)
20
TAMB = 25° C
V ID = 100mV
3
VCC = 5V
2
VCC = 3V
1
0
-10
-8
-6
-4
-2
16
8
VCC = 10V
4
0
-50
OUTPUT VOLTAGE, VOL (V)
OUTPUT VOLTAGE, VOL (V)
V CC = 3V
V CC = 5V
T a mb = 25 C
Vic = 0.5V
V = -100mV
id
1
2
OUTPUT CURRENT, I OL (mA)
VID = 100mV
-40
-30
-20
-10
0
Figure 3b : Low Level Output Voltage versus
Low Level Output Current
0.4
0
TAMB = 25°C
OUTPUT CURRENT, I OH (mA)
1.0
0.2
125
12
0
Figure 3a : Low Level Output Voltage versus
Low Level Output Current
0.6
100
VCC = 16V
OUTPUT CURRE NT, I OH (mA)
0.8
75
Figure 3b : High Level Output Voltage versus
High Level Output Current
5
4
50
TEMPERATURE, TAMB (°C)
SUP PLY VOLTAGE, VCC (V)
3
3
VCC = 10V
VCC = 16V
2
1
T a mb = 25 C
V i = 0.5V
V = -100mV
id
0
4
8
12
16
OUTPUT CURRENT, I OL (mA)
20
5/8
TS27L2C,I,M
TYPICAL CHARACTERISTICS (continued)
50
40
GAIN (dB)
30
45
P HASE
20
P ha s e
Margin
Ta mb = 25 C
VCC+ = 10V
R L = 1M Ω
C L = 100pF
A VCL = 100
10
0
135
2
10
3
180
Ga in
Ba ndwidth
P roduct
-10
10
90
4
5
10
10
10
FREQUENCY, f (Hz)
6
10
PHASE (Degrees)
0
GAIN
7
PHASE
30
T a mb = 25 C
R L = 1MΩ
C = 10 0pF
A LV = 1
0
4
8
12
SUP P LY VOLTAGE, VCC (V)
16
EQUIVALENT INPUT NOISE
VOLTAGE (nV/VHz)
SLEW RATES, SR (V/µs)
SR
L
0.04
SR
40
0
4
4
8
12
16
80
Ta mb = 25 C
R L = 1MΩ
AV = 1
VCC = 10V
70
60
50
40
0
6
8
10
12
14
S UP P LY VOLTAGE, VCC (V)
20
40
60
80
10 0
300
VCC = 10V
Tamb= 25 C
R S = 100 Ω
200
100
0
0.02
6/8
60
Figure 10 : Input Voltage Noise versus
Frequency
0.05
0.03
80
CAPACITANCE, C L (pF)
Figure 9 : Slew Rate versus Supply Voltage
Ta mb = 25 C
R L = 1M Ω
C = 100pF
T amb = 25 C
R L = 1M Ω
C L = 100pF
AV = 1
100
Figure 8 : Phase Margin versus Capacitive Load
PHASE MARGIN, φ m (Degrees)
MARGIN,φ
m (Degrees)
60
40
120
S UP P LYVOLTAGE, VCC (V)
Figure 7 : Phase Margin versus Supply Voltage
50
Figure 6 : Gain Bandwidth Product versus
Supply Voltage
GAIN BANDW. PROD., GBP (MHz)
Figure 5 : Open Loop Frequency Response and
Phase Shift
16
1
100
10
FREQUENCY (Hz)
1000
TS27L2C,I,M
PM-DIP8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
A
a1
B
b
b1
D
E
e
e3
e4
F
i
L
Z
Min.
Millimeters
Typ.
3.32
0.51
1.15
0.356
0.204
Max.
1.65
0.55
0.304
10.92
9.75
7.95
Min.
0.020
0.045
0.014
0.008
Max.
0.065
0.022
0.012
0.430
0.384
0.313
2.54
7.62
7.62
3.18
Inches
Typ.
0.131
0.100
0.300
0.300
6.6
5.08
3.81
1.52
0.125
0260
0.200
0.150
0.060
DIP8.TBL
Dimensions
7/8
TS27L2C,I,M
PM-SO8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Min.
Millimeters
Typ.
0.1
0.65
0.35
0.19
0.25
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Inches
Typ.
0.026
0.014
0.007
0.010
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
o
45 (typ.)
4.8
5.8
5.0
6.2
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
o
8 (max.)
SO8.TBL
Dimensions
 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdo m - U.S.A.
8/8
ORDER CODE :
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON
Microelectronics. Specifications mentioned in this publ ication are subject to change without notice. This pub lication supersedes
and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical
components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.