NanoSeconds rise/fall time, High-Voltage push-pull

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NanoSeconds rise/fall time, High-Voltage push-pull switches
A switch belongs to the family of push-pull switches consists of two alternately controlled
solid-state switches, which in turn are made up to a large number of high-speed MOSFETs
isolated each other connected in series. The rise and fall times at the switch output are
virtually the same and that allow generating an extremely precise, high-voltage, true
square-wave pulses.
Electronic Design & Research
http://www.vsholding.com
Applications:
•
Technology for people's ideas
•
•
•
•
1000V – EDR83915
Input Specifications:
Input Control Voltage (pin 4)
Nominal Current
Power Supply +Vcc (pin6)
see page #21
110 mA/5VDC
see page #21
•
Replacement of thyratrons, ignitrons, cold cathode tubes, electron
tubes, spark gaps and electromechanical high-voltage relays
Pulsed particle accelerator/deflection
Mass spectrometry & high energy physics
Radar and microwave modulation
Laser electronics and electro-optics
Medical shock wave generators
Output Specifications:
Operating voltage range
Maximum continuous current
Maximum surge current (IDM) -0.1mS
Continuous current (ID) Pulsed
Maximum on-state resistance
Rising time
Delay-on time
Falling time
Pulse width range
Maximum switching frequency
1000 VDC
1.2 Arms rms
40 A
10 A
1.10 Ohm
18 nS
200 nS
19 nS
70 nS to infinity
150 KHz
20
-4
16
-6
12
-8
8
-10
4
-4
.2
50-2366RFR / 50-2366CFR
0
1
2
3
4
25Aug2006 15:26
5
6
7
8
-8
µs
A sample of 2.00 MHz burst frequency
0.8" (20mm)
1.15" (29 mm)
www.vsholding.com
7 6 5 4
Load
0
-1
1.75" (44 mm)
EDR83915/2
H3F103D1/5
Control
0
Mechanical Specifications:
Epoxies Etc.
V
x
-2
General Specifications:
Weight (oz)
Encapsulation
o
2
All specifications were giving without any heatsink at room temperature
Ambient operating temperature range -350 C to 850 C
Ambient storage temperature range -550 C to 1250 C
Dielectric Strength input-to-output 3,000VAC
x=916ns,o=422ns,xo=-494ns
V
4
PIN 1:
PIN 2:
PIN 3:
PIN 4:
PIN 5:
PIN 6:
PIN 7
NO1
COM
NO2
Control Signal (CS)
Enable (EN)
+ 5VDC
GND
1.2A, 1000VDC
NO2 COM NO1
0.3" (7.5 mm)
All Dimensions are in inches (millimeters).
Dimensions for SIP7 package
1.15”H x 1.75”L x 0.8”W
Terminals /solder for SIP7 package
control - 0.20”, power – 0.6“
6
4
5
7
V3Fxx
xT
DC/D
C
CO
NT
RO
L
.
1
2
3
Transient Protection: All loads are inductive, even ones that are not so obvious or labeled. An inductive load produces a harmful transient voltage,
which is much higher than the applied voltage, when it is turned on and off. A SSR built with a MOSFET output acts as an ideal switch and can
produce a seemingly “non-inductive” load, which can cause damage if not suppressed. A transient voltage suppressor, which is bi-directional for AC
applied voltage and unidirectional for DC applied voltage, should be used to clamp excessive spikes.
Electronic Design & Research Inc. ** 7331 Intermodal Dr. ** Louisville ** KY 40258
Data Sheet 7141
Page 1
Made in USA
www.vsholding.com
Input Electrical Characteristics (Ta = 250C) for V3F1000TD2/5, p/n EDR83915/2
Characteristic
Test Condition
Min
Typ. Max.
Control Voltage, low level threshold
1.7
Control Voltage, high level threshold
3.3
Enable (EN) threshold (pin 5)
1.0
3.0
Input Current
0.3
Unit
V
V
V
mA
Input Electrical Characteristics (Ta = 250C)
Power Supply (pins 6), Vcc (200 mA maximum)
Maximum Vcc current at DC – 1.0 KHz
Maximum Vcc Current at 150 KHz
V
mA
mA
4.9
5
110
200
5.3
Switching test – +/-400V, Load – 400 Ohm & 1.0 A
x=529ns,o=366ns,xo=-163ns
V
V
V
4
2
5
2
5
0
4
V
4
x=0ns,o=233ns,xo=233ns
x
o
-2
3
-4
2
-6
1
-8
0
-10
-1
Control
o
x
0
4
-2
3
-4
2
-6
1
-8
0
-10
-1
Load
-2
-0.2
0.0
0.2
0.4
0.6
0.8
26Aug2006 11:28
1.0
1.2
1.4
-3
-0.4
-4
x=221ns,o=233ns,xo=12ns
x
-0.2
0.0
0.2
0.4
0.6
0.8
26Aug2006 11:28
µs
Figure 1 Turn-on delay is 233 nS
V
4
Load
-2
-3
-0.4
Control
Figure 2
V
V
4
o
1.0
1.2
1.4
-4
µs
Turn-off delay is 163 nS
x=545ns,o=522ns,xo=-23ns
o
V
x
2
5
2
5
0
4
0
4
-2
3
-2
3
-4
2
-4
2
-6
1
-6
1
-8
0
-8
0
-10
-1
-10
-1
Control
Load
-2
-0.2
0.0
Figure 3
0.2
0.4
0.6
0.8
26Aug2006 11:28
1.0
1.2
1.4
Load
-2
-3
-0.4
Control
-3
-4
µs
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
26Aug2006 11:28
Rising time is 12nS
Figure 4
Figure 3 Rising Time is 144 nS
Figure 4
1.0
1.2
1.4
-4
µs
Fall time 23nS
Fall Time is 144 nS
FUNCTIONAL TABLE
+5VDC
EN
CS
NO1
NO2
L
X
OFF
OFF
H
H
2.5V
5.0V
OFF
ON
OFF
C9
V3FxxT
6
CONTROL (CS)
ENABLE (EN)
4
5
7
C7 +400V
1
BT1
NO1
DC/DC
CO
NT
RO
L
.
1
2
LOAD
2
1
3
BT2
OFF
NO2
H
0V
OFF
2
ON
C8
C6
-400V
Fig. 5 Switching Time Test Circuit
A switch can be controlled via the enable (EN) input (“L”/”H”), if only + or - power needs to be applied
on a load, or via the control (CS) when a bipolar power must applied onto the load.
Electronic Design & Research Inc. ** 7331 Intermodal Dr. ** Louisville ** KY 40258
Tel: 502-933-8660;
Data Sheet 7141
Page 2
Fax: 502-933-3422;
Sales: 800-336-1337;
Made in USA
e-mail: vsholding@vsholding.com
www.vsholding.com
Test Circuit for forming a fast rising/falling pulse
Figure 6
Basic application for generating various polarity pulses
Figure 7
Test Circuit for generating a single polarity pulse
NOTES:
1. Wiring should be as short as possible
2. Capacitor Cp should be at least 50 times of Cl for shortest transition times
3. Connected in series resistors R14 and R15 used for dumping and short protection. All
measurements refer to 50 Ohm. According to a specific application, resistors can be
between 0 (zero) and 1Mohm and should be selected the highest possible to avoid ringing.
4. A low impedance linkage between logic GND and earth is very important for interference
free operation with a high switching speed.
Data Sheet 7141
Page 3
Made in USA
www.vsholding.com
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