PD - 96312
IRF9362PbF
HEXFET® Power MOSFET
VDS
-30
V
21.0
mΩ
32.0
mΩ
Qg (typical)
13
nC
ID
-8.0
A
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
(@TA = 25°C)
S2 1
8 D2
G2 2
7 D2
S1 3
6 D1
G1 4
5 D1
SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number
Package Type
IRF9362PbF
IRF9362TRPbF
SO8
SO8
Resulting Benefits
results in Multi-Vendor Compatibility
Environmentally Friendlier
⇒
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
-30
VGS
Gate-to-Source Voltage
±20
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-8.0
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-6.4
Pulsed Drain Current
-64
IDM
PD @TA = 25°C
PD @TA = 70°C
f
Power Dissipation f
c
Power Dissipation
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 2
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1
06/25/10
IRF9362PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Min.
Typ.
Max.
Units
-30
–––
–––
0.021
–––
–––
V
V/°C
–––
17.0
21.0
–––
25.7
32.0
mΩ
VGS(th)
Gate Threshold Voltage
-1.3
-1.8
-2.4
V
∆VGS(th)
IDSS
Gate Threshold Voltage Coefficient
–––
-5.8
–––
mV/°C
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-150
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
Forward Transconductance
12
–––
–––
S
Total Gate Charge
–––
13
–––
nC
–––
26
39
–––
–––
3.8
6.3
–––
–––
nC
Ω
IGSS
gfs
Qg
Qg
Qgs
Qgd
h
Total Gate Charge h
h
h
Gate-to-Source Charge
Gate-to-Drain Charge
h
µA
nA
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -8.0A
e
e
VGS = -4.5V, ID = -6.4A
VDS = VGS, ID = -25µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VDS = -10V, ID = -6.4A
VDS = -15V, VGS = -4.5V, ID = - 6.4A
VGS = -10V
VDS = -15V
ID = -6.4A
RG
Gate Resistance
–––
17
–––
td(on)
Turn-On Delay Time
–––
5.2
–––
VDD = -30V, VGS = -10V
tr
Rise Time
–––
5.9
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
115
–––
tf
Fall Time
–––
53
–––
Ciss
Input Capacitance
–––
1300
–––
Coss
Output Capacitance
–––
250
–––
Crss
Reverse Transfer Capacitance
–––
170
–––
ns
e
RG = 6.0Ω
See Figs. 19a & 19b
VGS = 0V
pF
VDS = -25V
ƒ = 1.0kHz
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
c
Diode Characteristics
Parameter
IS
Min.
Continuous Source Current
(Body Diode)
ISM
d
Typ.
Typ.
Max.
Units
–––
–––
94
-6.4
mJ
A
Max.
–––
–––
-2.0
–––
–––
-64
–––
–––
-1.2
Units
A
Pulsed Source Current
c
(Body Diode)
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
e
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
–––
32
48
ns
TJ = 25°C, IF = -2.0A, VDD = -24V
Qrr
Reverse Recovery Charge
–––
20
30
nC
di/dt = 100/µs
V
TJ = 25°C, IS = -2.0A, VGS = 0V
Thermal Resistance
Parameter
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient
f
g
Typ.
Max.
–––
20
–––
62.5
e
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
2
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IRF9362PbF
100
100
10
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
1
-2.5V
0.1
≤60µs PULSE WIDTH
10
BOTTOM
-2.5V
1
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T J = 150°C
TJ = 25°C
1
VDS = -15V
≤60µs PULSE WIDTH
0.1
ID = -8.0A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
1
2
3
4
5
6
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
10000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-V GS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-V GS, Gate-to-Source Voltage (V)
ID= -6.4A
C oss = C ds + C gd
C, Capacitance (pF)
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
Ciss
1000
Coss
Crss
12.0
VDS= -24V
VDS= -15V
10.0
VDS= -6.0V
8.0
6.0
4.0
2.0
0.0
100
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRF9362PbF
1000
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
100µsec
1msec
10msec
10
DC
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1.0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.01
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
1
10
100
Fig 8. Maximum Safe Operating Area
2.2
-V GS(th), Gate threshold Voltage (V)
8
-I D, Drain Current (A)
0.1
-VDS, Drain-to-Source Voltage (V)
6
4
2
2.0
1.8
1.6
ID = -25µA
1.4
1.2
1.0
0.8
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T A , Ambient Temperature (°C)
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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60
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRF9362PbF
ID = -8.0A
50
40
30
T J = 125°C
20
T J = 25°C
10
0
2
4
6
8
10
12
14
16
18
70
60
Vgs = -4.5V
50
40
30
20
Vgs = -10V
10
0
20
0
10
20
30
40
-V GS, Gate -to -Source Voltage (V)
60
70
Fig 13. Typical On-Resistance vs. Drain Current
1000
400
ID
TOP
-1.8A
-2.6A
BOTTOM -6.4A
800
Single Pulse Power (W)
300
200
100
600
400
200
0
25
50
75
100
125
0
1E-5
150
1E-4
Starting T J , Junction Temperature (°C)
D.U.T *
1E-2
Driver Gate Drive
+
‚
-
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
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VDD
Forward Drop
Inductor
Current
Inductor Curent
Ripple ≤ 5%
Reverse Polarity of D.U.T for P-Channel
P.W.
Period
*

•
•
•
•
1E+0
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
„
D=
Period
P.W.
-
1E-1
Fig 15. Typical Power vs. Time
+
ƒ
RG
1E-3
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
*
50
-I D, Drain Current (A)
Fig 12. On-Resistance vs. Gate Voltage
EAS , Single Pulse Avalanche Energy (mJ)
80
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
IRF9362PbF
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
SS
Qgodr
Fig 17a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V
GS
-20V
tp
Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
L
VDS
Qgd
VDD
A
DRIVER
0.01Ω
tp
V(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
VDS
RD
td(on)
VGS
RG
t d(off)
tf
VGS
D.U.T.
-
+
10%
V DD
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 19a. Switching Time Test Circuit
6
tr
90%
VDS
Fig 19b. Switching Time Waveforms
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IRF9362PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
e1
6X
e
e1
8X b
0.25 [.010]
A
MAX
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
A1
MILLIMETERS
MAX
A
5
INCHES
MIN
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
8X 0.72 [.028]
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD F OR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DIS GNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF9362PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
†
Qualification Information
Consumer ††
Qualification level
Moisture Sensitivity Level
RoHS Compliant
†
††
†††
(per JEDEC JESD47F††† guidelines)
MSL1
SO-8
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/2010
8
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