mmW / Sub-mmW
Technologies and
Applications
UC Davis mmW Workshop
October 30, 2014
Jeffrey M. Yang; Bill Deal, Kevin Leong, Alex Zamora, Vesna
Radisic, Gerry Mei, Rich Lai, Steve Sarkozy, Wayne Yoshida,
Po-Hsin Liu, Mike Lange, Joe Zhou, Ben Gorospe, Wes
Yamaski, Khan Nguyen, Keyey Kyoda, Paul Yocum, Viviana
Navarro, Javier Velazquez, Aaron Oki, and Reynold Kagiwada
NGAS Research & Technology
Approved for public release; distribution unlimited.
NGAS Case 14-2731 dated 10/17/14.
Outline
•
•
•
•
Overview
Applications
Enabling Technologies
Performance Demonstrations
– TMICs
– Integrated Module Assembly
• Summary
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NGAS High Frequency
Amplifier Technology
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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mmW / Sub-mmW
System Considerations
• Large Bandwidth
– Radar: Enhance resolution with reduced integration time
– Comm: High data rate
• Compact Payload Via Frequency Scaling
– Physically Small, Electrically Large Antenna Aperture
– Multi-Function
• System Stand-Off / Operation Range
• New Research Areas and Unforeseen Applications
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ITU Atmospheric Attenuation Model
100
Water Vapar
Dry Air
Loss (dB/km)
10
1
0.1
0.01
0.001
1.00
UC David Millimeter Wave Workshop
10.00
Frequency (GHz)
100.00
October 2014
5
Commercial / DoD
Application Convergence
Automotive
Unmanned Aerial Vehicle
Sense And Avoid
Vision Enhancement
Inter-Vehicle Comm
Compact, Low cost, Payloads for SWaP Constrained Platforms
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Technological Innovations
100nm
Dual-Develop
Technology
Scaled Material.
Scaled Wafers.
Scaled Layout.
25um
Fundamental
Nanotech
Components
Advanced Layout and
Processing
75um
Electron Beam Lithography
30nm
THz Modeling
~100um
10um
THz Design Techniques
Leading
THz Circuit
Expertise
Custom Shape
Suppress
Substrate
Modes
Source
Gate Bypass
Drain
Gate Bypass
Gate
Source
Source
Metrology
Understanding
Terahertz
Integration
5
Drain
Connectivity
THz Components.
THz Probes.
THz Stations.
Packaging
Micromachined
Waveguide
•Dime
Electromagnetic
Transition to Engineered
Waveguide
•Waveguide
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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Northrop Grumman
Advanced InP HEMT Technology
Performance of THz Scaled
HEMT Transistors
3500
3000
2500
DC GM (mS/mm)
30nm
•
2000
9.2µm
finger
4.2µm
finger
3.2µm
finger
2.2µm
finger
1.2µm
finger
1500
Scaling
1000
340GHz
670 GHz
1 THz?
500
9.2 µm finger
4.2 µm finger
1.2 µm finger
0
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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High frequency operation requires “THz
Scaled” gate width (not just length)
Param
Units
Param
MAG
dB
~6 @ 0.67 THz
fT
THz
0.7
fmax
THz
> 1.4
RF Gm
mS/mm
2900
Cgs
pF/mm
0.54
Cgd
pF/mm
0.15
Rg
Ω/mm
100
Rs
Ω.mm
0.15
October 2014
9
TMIC Process Considerations

Front Side
TMIC compaction Consideration
• Diagonal Airbridges
• Airbridges over Capacitors
• Metal Spacing
• Layer to layer metal connection
Post Processing / Dice
• Minimize chip dimension to avoid cavity
moding
• Dicing yield near 100%
• Good control of transition area
• Improved cleanliness, reduced chip-outs
1.7um
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
UC David Millimeter Wave Workshop
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10
NGAS InP HEMT MMIC Gain/stage
High Gain Per Stage Enabled by Successful Transistor Scaling
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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Wideband Low Noise Amplifier
Key Features
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Linear Gain: 29 dB, typical
•
Noise Figure: 2.5 dB, typical
•
0.1um InP HEMT Process
•
DC Power: < 35 mW
•
X = 2.0 mm, Y = 0.85 mm
October 2014
12
Amplifier Electronics
220 GHz SSPA Module
• Grounded Coplanar
Waveguide (GCPW) design
• WR4 split-block Module
• On-chip, dual dipole
transition to waveguide
Measured Pout vs.
Frequency
Measured Pout at 210 GHz
80
8
70
6
50
PAE(%)
40
4
30
20
2
10
Pout (mW)
Gain(dB)
2
3
4
5
0
6
Input Power (mW)
7
13
60
12
50
40
11
Gain(dB)
30
10
20
9
Pin(mW)
10
0
14
Power Gain (dB)
60
Pout, Pin (mW)
Pout (mW)
PAE (%)
Pout (mW), Gain (dB)
70
80
0
8
200
205
210
215
220
225
230
Frequency (GHz)
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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THz HEMT 300 GHz Buffer Amplifier
Measured Output Power at Waveguide
Flange at 300 GHz
• Measured 4.7 mW Pout at 300 GHz at module level.
• Pout at MMIC ~ 7.8 mW @ 300 GHz (dipole loss ~1.2 dB)
Gain(dB)
14
5.0
Pin(mW)
4.5
Pout
Gain
13
12
3.5
11
3.0
10
2.5
9
2.0
8
1.5
Pin
7
1.0
6
0.5
5
0.0
-35
-30
-25
-20
-15
-10
-5
Measured S-Parameters at Waveguide Flange
4.0
30
s11(db)
s21(db)
s22(db)
20
(mW)
Gain(dB)
Pout(mW)
S-Parameters (dB)
15
10
0
-10
-20
0
Pin(dBm)
-30
200
225
250
275
300
325
350
Frequency (GHz)
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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650 GHz PA Module
2-Way Combiner Module Photo
Y-Junction
10
Measured at 653.5 GHz
4.0
9
Gain
3.5
Pout
7
2.5
6
2.0
5
1.5
4
S21
3.0
Ph.I Metric
1.0
Pin
3
0.5
2
0.0
-25
-20
-15
-10
-5
Pout, Pin (mW)
Gain(dB)
8
0
5
Pin(dBm)
• Y-junction power splitter/combiner and TMIC amplifier
cavities fabricated in single housing
S22
S11
• Loss per coupler estimated to be <0.3 dB based on
comparison with single chip fixture
• Successfully power combined 2 TMIC amplifiers
Demonstrated >2.5 mW SSPA at referenced to waveguide flange
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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NGAS PA Trends
30
Power [dBm]
25
20
15
10
5
0
Power referenced to MMIC
Power referenced to package
100
Frequency [GHz]
Expect continued performance improvement as
newest HEMT scaling is deployed in integrated circuits
1000
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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670 GHz Micro-Machined Amplifier
S-Parameters [dB]
10
Active layer
S21
Amp
0
E-plane probe
E-plane probe
WG Split
S22
-10
Amp
S11
-20
500
525
550
575
600
625
650
675
Frequency [GHz]
• Measured 9 dB gain at 655
GHz from power combined
amplifier micromachined chip
• InP THz HEMT amplifier
• Integrated low loss
micromachined power
combiner
700
725
Micromachined Chip
Test Fixture
DC board
Center
carrier
Chip
WR1.5
End block
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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670 GHz Low Noise Amplifier
•
•
•
•
10 Stage LNA using 14 um transistors
30 dB peak gain at 670 GHz (measured on-wafer)
70 mW DC power consumption
Integrated electromagnetic probe version also developed
for practical packaging at 670 GHz
S-Parameter [dB]
40
30
S21
20
10
0
S11
-10
S22
-20
500
550
600
650
700
750
Frequency [GHz]
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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850 GHz TMIC LNA
•
3.6 dB measured gain at 850 GHz
Ten stage design
Re-simulated design with transistor model
parameters taken from wafer
Higher Cgs and Cgd reduces gain and shifts
frequency response
LNA Photograph
S-Parameters [dB]
•
•
•
20
10
S21
0
S11
-10
S22
-20
-30
-40
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
Frequency [THz]
First Demonstrated Gain at 850 GHz
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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Frequency Multipliers
THz HEMT 300 GHz Tripler
100 GHz Quartz
E-plane
Transition
DC Bias
WR3.4 WG
(300 GHz)
X3
circuit
DC Bias
300 GHz
buffer
amplifier
10
-5
Tripler+ amp chip
-10
-15
Test condition
-20
Tripler chip
• 10 dBm input power
-25
270
280
290
300
310
Output Frequency (GHz)
320
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Output power (dBm)
Conversion Gain (dB)
0
Features
• InP HEMT common source single
ended HEMT tripler
• Conversion gain of tripler+amp circuit
increased by 10 dB compared to
tripler only circuit
• 5 dBm output Power at 300 GHz
• Measured result at waveguide flange
5
Tripler+ amp chip
0
-5
Tripler chip
-10
-15
-20
Test condition
-25
• Fin = 100 GHz
-30
-5
0
5
Input Power (dBm)
October 2014
10
15
22
593 GHz Doubler
with Input Buffer Amplifier
Measured Results at Waveguide Flange
HEMT Doubler
Input Buffer
Amplifier
Features
• 593 GHz single ended doubler
integrated with 300 GHz band buffer
amplifier
• Circuit can be fully saturated at 0 dBm
input power
• Provides -18 dBm (16μW) output power
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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800 GHz Doubler
Features
 Input Frequency 400 GHz
 Output Frequency 800 GHz
 Pout > 40 μW
Measured Output Power at Flange
Measured PiPo curve
Fin=401 GHz
Curve shows that doubler is not
saturating, indicating higher
output power potential.
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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Integrated Module Assembly
InP HEMT 670 GHz Integrated
Transmitter
PA
PA
SH Mixer
RF
RF out
670 GHz
THz
Exciter
300 GHz
LO
Amp
IF input
70
GHz
3 LO
multiplier
RF
100 GHz
LO input
LO
IF
2 mW Measured
Power
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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InP HEMT Integrated Receiver
Multiplier
Driver
Mixer
LO Amp
670
x3
100
70
• Realized a grounded
coplanar waveguide
topology with 2um
spacing for 670 GHz
operation
• Reduced spacing
between transistors to
10um, still have
interstage matching
caps, airbridge, and
drain/gain lines
• Realized world’s first HEMT
smmW/THz mixers and
multipliers
• Macrocells reduced high
frequency transition loss
• WR1.5 (670 GHz) 10
stage amps have such
processing uniformity
that 1 gate bias and 1
drain bias sufficient for
entire 10 stages.
• Processed receiver and
exciter System-on-chips
with >75% RF yield
• Realized on and off chip
power combining with
high efficiency
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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Wafer Level Packaging
Front Side Antenna
Sealing Ring
(Wafer 2)
antenna
Wafer 2
Wafer
Bonding
Phase
shifter
ICIC
Sealing Ring
(Wafer 1)
Amplifier
Wafer 1
Ground Fence
Through wafer via
Enclosed Electronics
*MTT 2007
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Back Side Bump
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Summary
Conclusions
• Transistor based electronics operating > 800 GHz
have been demonstrated
– Low Noise Amplifiers
– Power Amplifiers
– Integrated receivers and transmitters
• Frequency scaled packaging techniques are now
being developed
– Micromachined waveguides
– Wafer Level Assembly
– Monolithic integration of entire sub-systems
• Foundation transistor technologies developed can
be leverage to provide performance enhancements
in the RF operation frequency
Approved for public release; distribution unlimited. DISTAR Case 20963, NGAS Case 13-0506 dated 5/6/13.
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