IRF9395MPbF
DirectFET™ dual P-Channel Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
-30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V
Applications
l Isolation Switch for Input Power or Battery Application
Features and Benefits
Qg tot
Qgd
Qgs2
Qrr
Qoss
Vgs(th)
32nC
15nC
3.2nC
62nC
23nC
-1.8V
Q1-Q2
l Environmentaly Friendly Product
l RoHs Compliant Containing no Lead,
G
no Bromide and no Halogen
l Dual Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
D
G
S
S
S
S
D
DirectFET™ ISOMETRIC
MC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MC
MP
Description
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced
DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
Orderable part number
Package Type
IRF9395MTRPbF
IRF9395MTR1PbF
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
g
Typical RDS(on) (mΩ)
24
ID = -14A
20
16
12
T J = 125°C
8
4
T J = 25°C
0
2
4
6
8
10
12
14
16
18
20
-VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
1
Units
-30
±20
-14
-11
-75
-110
e
e
f
-VGS, Gate-to-Source Voltage (V)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
"TR" suffix
"TR1" suffix EOL notice # 264
Max.
Parameter
VDS
Note
V
A
14.0
ID= -11A
12.0
VDS= -24V
VDS= -15V
10.0
VDS= -6V
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
VGS = 0V, ID = -250μA
V/°C Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -14A
mΩ
VGS = -4.5V, ID = -11 A
Drain-to-Source Breakdown Voltage
-30
–––
–––
ΔΒVDSS/ΔTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.012
5.3
–––
7.0
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
–––
-1.3
–––
9.0
-1.8
-6.1
Drain-to-Source Leakage Current
–––
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
gfs
Qg
Forward Transconductance
Total Gate Charge
Total Gate Charge
40
–––
–––
–––
64
32
Pre- Vth Gate-to-Source Charge
Post -Vth Gate-to-Source Charge
–––
–––
6.5
3.2
–––
–––
Gate-to-Drain Charge
Gate Charge Overdrive
Switch charge (Qgs2 + Qgd)
–––
–––
15
7.3
–––
–––
Output Charge
Gate Resistance
–––
–––
–––
18.2
23
15
–––
–––
–––
Turn-On Delay Time
Rise Time
–––
–––
16
142
–––
–––
Turn-Off Delay Time
Fall Time
Input Capacitance
–––
–––
–––
76
121
3241
–––
–––
–––
Output Capacitance
Reverse Transfer Capacitance
–––
–––
820
466
–––
–––
Min.
Typ. Max. Units
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Conditions
Typ. Max. Units
BVDSS
V
h
h
11.9
-2.4
V
VDS = VGS, ID = -50μA
––– mV/°C
VDS = -24V, VGS = 0V
-1.0
μA
VDS = -24V, VGS = 0V, TJ = 125°C
-150
VGS = -20V
-100
nA
V
100
GS = 20V
VDS = -15V, ID = -11A
–––
S
VDS = -15V, VGS = -10V, ID = -11A
–––
–––
VDS = -15V
nC
VGS = -4.5V
ID = -11A
See Fig.15
nC
VDS = -16V, VGS = 0V
Ω
VDD = -15V, VGS = -4.5V
ns
pF
ID = -11A
h
RG = 1.8Ω
See Fig.17
VGS = 0V
VDS = -15V
ƒ = 1.0KHz
Diode Characteristics
Parameter
IS
ISM
VSD
trr
Qrr
Continuous Source Current
(Body Diode)
Pulsed Source Current
g
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
-57
–––
–––
-110
–––
–––
-1.2
V
–––
–––
43
62
65
93
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -11A, VGS = 0V
TJ = 25°C, IF = -11A, ,VDD = -15V
h
di/dt = 260A/μs
h
Notes:
† Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
© 2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
Max.
Parameter
e
e
f
Units
2.1
1.3
57
270
-40 to + 150
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
W
°C
Thermal Resistance
e
i
j
fk
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
Typ.
Max.
Units
–––
12.5
20
–––
1.0
60
–––
–––
2.2
–––
°C/W
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case ,
Junction-to-PCB Mounted
Linear Derating Factor
e
0.02
W/°C
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
10
1
0.1
τJ
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
0.001
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
Ri (°C/W)
τA
τ1
τ2
τ2
τ3
τ4
τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
τA
τ4
τi (sec)
10.609
0.239813
3.5414
0.007823
24.659
2.632793
21.032
18.15739
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
‡ Used double sided cooling, mounting pad with large heatsink.
ˆ Mounted on minimum footprint full size board with metalized
‰ Rθ is measured at TJ of approximately 90°C.
back and with small clip heatsink.
ƒ Surface mounted on 1 in. square Cu
board (still air).
3
© 2014 International Rectifier
‰ Mounted to a PCB with small
clip heatsink (still air)
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
1000
1000
100
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
100
10
1
-2.6V
0.1
10
-2.6V
≤60μs PULSE WIDTH
1
1
10
0.1
100
1
Fig 4. Typical Output Characteristics
ID = -14A
Typical RDS(on) (Normalized)
-I D, Drain-to-Source Current (A)
1.5
VDS = -15V
≤60μs PULSE WIDTH
100
10
T J = 150°C
T J = 25°C
T J = -40°C
0.1
2
3
4
V GS = -10V
V GS = -4.5V
1.0
0.5
5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
38
100000
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
30
Typical RDS(on) ( mΩ)
10000
Ciss
Coss
1000
T J = 25°C
34
C oss = C ds + C gd
C, Capacitance(pF)
100
Fig 5. Typical Output Characteristics
1000
1
10
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
1
≤60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
BOTTOM
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
Crss
Vgs = -4.5V
Vgs = -6.0V
Vgs = -8.0V
Vgs = -10V
Vgs = -12V
26
22
18
14
10
6
2
100
1
10
100
0
25
-VDS, Drain-to-Source Voltage (V)
© 2014 International Rectifier
75
100
125
-I D, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
50
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
1000
T J = 150°C
T J = 25°C
T J = -40°C
100
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
1
1ms
10
10ms
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
100μs
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.01
-VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
40
20
0
75
100
125
10
100
3.0
2.5
2.0
1.5
ID = 50μA
ID = 250μA
ID = 1.0mA
1.0
ID = 1.0A
0.5
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
1200
EAS , Single Pulse Avalanche Energy (mJ)
-I D, Drain Current (A)
60
50
1
Fig 11. Maximum Safe Operating Area
80
25
0.1
-VDS, Drain-to-Source Voltage (V)
ID
TOP
-1.2A
-1.9A
BOTTOM -11A
1000
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
© 2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
S
Qgodr
Fig 15a. Gate Charge Test Circuit
Qgd
Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
20V
+
- VDD
IAS
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
VDS
VGS
A
Fig 16b. Unclamped Inductive Waveforms
td(on)
RD
tr
t d(off)
tf
VGS
10%
D.U.T.
RG
+
- VDD
90%
V10V
GS
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
6
© 2014 International Rectifier
Fig 17b. Switching Time Waveforms
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
D.U.T
Driver Gate Drive
+
ƒ
+
‚
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

RG
•
•
•
•
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
Re-Applied
Voltage
+
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
-
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Board Footprint, MC Outline
(Medium Size Can, C-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
G
G
S
S
S
S
D
D
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
© 2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
DirectFET™ Outline Dimension, MC Outline
(Medium Size Can, C-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
J1
K
L
M
N
P
METRIC
MIN MAX
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
0.58 0.62
0.58 0.62
1.18 1.22
0.56 0.60
1.98 2.02
1.02 1.06
2.22 2.26
0.59 0.70
0.03 0.08
0.08 0.17
IMPERIAL
MAX
MIN
0.250
0.246
0.201
0.189
0.156
0.152
0.018
0.014
0.024
0.023
0.024
0.023
0.023
0.024
0.047
0.048
0.023
0.022
0.078
0.079
0.040
0.041
0.089
0.088
0.028
0.023
0.001
0.003
0.007
0.003
DirectFET™ Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
© 2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
DirectFET™ Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
METRIC
IMPERIAL
MIN
MAX
MIN
MAX
0.311
7.90
0.319
8.10
0.154
4.10
3.90
0.161
0.469
11.90
0.484
12.30
0.215
5.55
5.45
0.219
0.201
5.10
0.209
5.30
0.256
6.70
6.50
0.264
0.059
1.50
N.C
N.C
0.059
1.60
1.50
0.063
N OTE: Controlling dimensions in m m
Std reel quantity is 4800 parts (ordered as IR F9395MTRPBF).
REEL D IMENSIONS
STANDARD OPTION (QTY 4800)
IMPERIAL
METRIC
C ODE
MIN
MIN
MAX
MAX
A
12.992
330.0
N .C
N.C
B
0.795
20.2
N .C
N.C
C
0.504
12.8
0.520
13.2
D
0.059
1.5
N .C
N.C
E
3.937
100.0
N.C
N .C
F
N.C
N.C
18.4
0.724
G
0.488
12.4
14.4
0.567
H
0.469
11.9
15.4
0.606
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification Information
Industrial †
Qualification level
(per JEDEC JESD47F††guidelines)
Moisture Sensitivity Level
MSL1
DirectFET
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
10/25/2013
2/24/2014
Comments
• Updated Qualification level from "Consumer" to "Industrial" on page 9
• Updated data sheet with new IR corporate template
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264)
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
© 2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014