DG2018, DG2019
Vishay Siliconix
Low Voltage, Dual DPDT and Quad SPDT Analog Switches
DESCRIPTION
FEATURES
The DG2018 and DG2019 are low voltage, single supply
analog switches. The DG2018 is a dual double-pole/doublethrow (DPDT) with two control inputs that each controls a
pair of single-pole/double-throw (SPDT). The DG2019 uses
one control pin to operate four independent SPDT switches.
• Low voltage operation (1.8 V to 5.5 V)
• Low on resistance
- RDS(on): 6 Ω at 2.7 V
• Low voltage logic compatible
- DG2019: VINH = 1 V
• High bandwidth: 180 MHz
When operated on a + 3 V supply, the DG2018’s control pins
are compatible with 1.8 V digital logic. The DG2019 has an
available feature of a VL pin that allows a 1.0 V threshold for
the control pin when VL is powered with 1.5 V.
Built on Vishay Siliconix’s low voltage submicron CMOS
process, the DG2018 and DG2019 are ideal for high
performance switching of analog signals; providing low onresistance (6 Ω at + 2.7 V), fast speed (Ton, Toff at 42 ns and
16 ns), and a bandwidth that exceeds 180 MHz.
The DG2018 and DG2019 were designed to offer solutions
that extend beyond audio/video functions, to providing the
performance required for today’s demanding mixed-signal
switching in portable applications.
An epitaxial layer prevents latch-up. Brake-before-make is
guaranteed for all SPDT’s. All switches conduct equally well
in both directions when on, and blocks up to the power
supply level when off.
• QFN-16 package
BENEFITS
•
•
•
•
•
•
Ideal for both analog and digital signal switching
Reduced power consumption
High accuracy
Reduced PCB space
Fast switching
Low leakage
APPLICATIONS
•
•
•
•
•
Cellular phones
Audio and video signal routing
PCMCIA cards
Battery operated systems
Portable instrumentation
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2018DN
QFN-16 (3 X 3)
COM1 NO1
16
15
TRUTH TABLE
V+
NC4
14
13
IN1, IN2
NC1
1
12
COM4
IN1, IN2
2
11
NO4
NO2
3
10
IN3, IN4
COM2
4
9
NC3
5
6
NC2
GND
7
8
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
Logic
NC3 and NC4
NO3 and NO4
0
ON
OFF
1
OFF
ON
IN3, IN4
ORDERING INFORMATION
Temp. Range
- 40 °C to 85 °C
Package
QFN-16 (3 x 3 mm)
Part Number
DG2018DN
NO3 COM3
Top View
Document Number: 72342
S-82626-Rev. C, 03-Nov-08
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1
DG2018, DG2019
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2019DN
QFN-16 (3 X 3)
COM1 NO1
16
15
V+
NC4
14
13
TRUTH TABLE
NC1
1
12
COM4
IN
2
11
NO4
NO2
3
10
VL
COM2
4
9
5
6
NC2
GND
7
Logic
NC1, 2, 3 and 4
NO1, 2, 3 and 4
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp. Range
- 40 °C to 85 °C
Package
QFN-16 (3 x 3 mm)
Part Number
DG2019DN
NC3
8
NO3 COM3
Top View
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
Limit
Unit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
V
Continuous Current (Any terminal)
± 50
Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)
± 100
Storage Temperature (D Suffix)
Power Dissipation (Packages)b
QFN-16 (3 x 3 mm)c
mA
- 65 to 150
°C
850
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
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Document Number: 72342
S-82626-Rev. C, 03-Nov-08
DG2018, DG2019
Vishay Siliconix
SPECIFICATIONS V+ = 3 V
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %,
(DG2018 Only) VIN = 0.5 or 1.4 Ve
Parameter
Symbol
(DG2019 Only) VL = 1.5 V, VIN = 0.4 or 1.0 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.b
Full
0
Typ.c
Max.b
Unit
V+
V
Analog Switch
VNO, VNC,
VCOM
Analog Signal Ranged
RON
On-Resistance
RON
Flatness
RON Flatness
RON Match Between
Channels
ΔRON
Switch Off Leakage Current
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V
INO, INC = 10 mA
V+ = 2.7 V
VCOM = 0 to V+, INO, INC = 10 mA
Room
Full
6
12
15
Room
0.5
2
Room
0.6
3
Room
Full
-1
- 10
0.3
1
10
Room
Full
-1
- 10
0.3
1
10
Room
Full
-1
10
0.3
1
10
DG2018
Full
1.4
DG2019
Full
1.0
DG2018
Full
0.5
DG2019
Full
0.4
V+ = 3.3 V, VNO, VNC = 0.3 V/3 V
VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Ω
nA
Digital Control
VINH
Input High Voltage
VINL
Input Low Voltage
Input Capacitance
Input Current
VL = 1.5 V
VL = 1.5 V
Cin
f = 1 MHz
Full
IINL or IINH
VIN = 0 or V+
Full
9
-1
V
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injection
d
16
25
35
Full
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω
Room
- 1.46
Room
- 67
Room
- 72
Room
180
XTALK
RL = 50 Ω, CL = 5 pF, f = 1 MHz
BW
Channel-On Capacitance
Room
Full
VNO or VNC = 2.0 V, RL = 50 Ω, CL = 35 pF
Crosstalkd
d
55
65
td
OIRR
NO, NC Off Capacitanced
42
QINJ
Off-Isolationd
Bandwidthd
VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF
Room
Full
1
CNO(off)
Room
9
CNC(off)
Room
9
Room
30
Room
30
Full
0.01
CNO(on)
VIN = 0 or V+, f = 1 MHz
CNC(on
ns
pC
dB
MHz
pF
Power Supply
Power Supply Current
I+
VIN = 0 or V+
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
Document Number: 72342
S-82626-Rev. C, 03-Nov-08
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3
DG2018, DG2019
Vishay Siliconix
SPECIFICATIONS V+ = 5 V
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %,
(DG2018 Only) VIN = 0.8 or 1.8 Ve
Parameter
Symbol
Limits
- 40 °C to 85 °C
(DG2019 Only) VL = 1.5 V, VIN = 0.4 or 1.0 Ve Temp.a
Min.b
Typ.c
Max.b
Unit
V+
V
Analog Switch
VNO, VNC,
VCOM
Analog Signal Ranged
RON
On-Resistance
RON
Flatness
RON Flatness
RON Match Between Channels
Switch Off Leakage Current
f
ΔRON
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Currentf
ICOM(on)
Full
0
V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA
Room
Full
4
8
10
V+ = 4.5 V
VCOM = 0 to V+, INO, INC = 10 mA
Room
0.6
1.2
Room
0.6
1.2
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V
Room
Full
-1
- 10
0.03
1
10
Room
Full
-1
- 10
0.03
1
10
Room
Full
-1
- 10
0.03
1
10
Ω
nA
Digital Control
Input High Voltage
VINH
Input Low Voltage
VINL
Input Capacitance
Cin
IINL or IINH
Input Current
VL = 1.5 V
VL = 1.5 V
DG2018
Full
1.8
DG2019
Full
1.0
DG2018
Full
0.8
DG2019
Full
0.4
Full
VIN = 0 or V+
Full
V
9
1
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injection
d
d
19
33
35
Full
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω
Room
- 2.46
Room
- 67
Room
- 72
BW
Room
180
CNO(off)
Room
7.5
Room
7.5
Room
30
Room
30
OIRR
Channel-On Capacitance
Room
Full
VNO or VNC = 3 V, RL = 50 Ω, CL = 35 pF
XTALK
CNC(off)
d
48
52
td
Crosstalkd
Source-Off Capacitanced
44
QINJ
Off-Isolation
Bandwidthd
VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF
Room
Full
CNO(on)
RL = 50 Ω, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
CNC(on
ns
1
pC
dB
MHz
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.8
VIN = 0 or V+
Full
0.01
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72342
S-82626-Rev. C, 03-Nov-08
DG2018, DG2019
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
9
10
R ON - On-Resistance (Ω)
R ON - On-Resistance (Ω)
8
V+ = 2.7 V
85 °C
25 °C
8
T = 25 °C
ICOM = 10 mA
V+ = 2.7 V
6
V+ = 5.5 V
4
V+ = 3.3 V
7
- 40 °C
6
5
V+ = 5.5 V
85 °C
25 °C
- 40 °C
4
3
2
2
1
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
RON vs. VCOM and Supply Voltage
10 mA
10 000
1000
I+ - Supply Current (A)
I+ - Supply Current (pA)
1 mA
V+ = 5.5 V
VIN = 0 V
100
10
100 µA
10 µA
1 µA
100 nA
10 nA
1
- 60
0
- 40
- 20
0
20
40
60
80
0
100
2M
Temperature (°C)
6M
8M
10 M
Supply Current vs. Input Switching Frequency
Supply Current vs. Temperature
150
10 000
125
V+ = 5 V
100
Leakage Current (pA)
1000
Leakage Current (pA)
4M
Input Switching Frequency (Hz)
INO(off), IINC(off)
100
ICOM(off)
ICOM(on)
10
V+= 3.3 V
75
50
ICOM(off)
ICOM(on)
25
0
- 25
INO(off), INC(off)
- 50
- 75
- 100
- 125
1
- 60
- 40
- 20
0
20
40
60
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 72342
S-82626-Rev. C, 03-Nov-08
80
100
- 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCOM, V NO, V NC - Analog Voltage (V)
Leakage vs. Analog Voltage
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DG2018, DG2019
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
50
RL = 300 Ω
1.4
Vth - Threshold Voltage
tON/toff - Switching Time (ns)
DG2018
1.6
tON V+ = 3.3 V
40
tON V+ = 5.5 V
30
tOFF V+ = 3.3 V
20
1.2
1.0
OFF/ON
0.8
0.6
0.4
tOFF V+ = 5.5 V
10
ON/OFF
0.2
0
- 60
0.0
- 40
- 20
0
20
40
60
80
0
100
3
4
5
Switching Time vs. Temperature
and Supply Voltage
Switching Voltage vs. Supply Voltage (V+)
6
10
8
DG2019
V+ = 5.5 V
1.4
1.2
V+ = 3.3 V
V+ = 5.5 V
1.0
6
Q - Charge Injection (pC)
1.6
Vth - Threshold Voltage
2
V+ - Supply Voltage (V)
1.8
0.8
4
2
0
V+ = 3.3 V
-2
0.6
0.4
1.0
1
Temperature (°C)
-4
-6
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
6.0
1
2
3
4
5
6
VL (V)
VCOM - Analog Voltage (V)
VIN vs. VL (Typ)
Charge Injection at Source vs. Analog Voltage
10
Loss
0
Loss, OIRR, XTALK (dB)
- 10
V+ = 3.0 V, 5.5 V
RL = 50 Ω, C L = 5 pF
- 20
- 30
- 40
OIRR
- 50
- 60
XTALK
- 70
- 80
- 90
- 100
- 110
100K
1M
10M
100M
1G
Frequency (Hz)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency
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Document Number: 72342
S-82626-Rev. C, 03-Nov-08
DG2018, DG2019
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
50 %
V+
NO or NC
Switch
Input
VINL
Switch Output
COM
tr < 5 ns
tf < 5 ns
VOUT
0.9 x VOUT
IN
Logic
Input
RL
300 Ω
GND
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
RL
R L + R ON
Figure 1. Switching Time
V+
ΔVOUT
V+
Rgen
NC or NO
VOUT
COM
VOUT
+
IN
IN
Vgen
CL = 1 nF
VIN = 0 - V+
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 2. Charge Injection
Logic
Input
V+
VNO
VNC
COM
NO
VO
VINH
tr < 5 ns
tf < 5 ns
VINL
NC
RL
50 Ω
IN
GND
CL
35 pF
VNC = VNO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make Interval
Document Number: 72342
S-82626-Rev. C, 03-Nov-08
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DG2018, DG2019
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
0 V, 2.4 V
IN
COM
COM
RL
Analyzer
GND
VCOM
Off Isolation = 20 log V
NO/ NC
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72342.
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Document Number: 72342
S-82626-Rev. C, 03-Nov-08
Package Information
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Vishay Siliconix
QFN-16 Lead (3 x 3)
D2
D2/2
Terminal Tip
D
(3)
- B-
D/2
L
E/2
E2/2
e
E
E2
C
3xe
0.25
- A-
Exposed Pad (4)
4xb
0.10
M
C
A
B
(3)
0.25
C
3xe
TOP VIEW
BOTTOM VIEW
// 0.10
C
0.08
C
A
(4) NX
A1
SEATING
PLANE
- C-
A3
SIDE VIEW
Notes
(1) All dimensions are in millimeters.
(2) N is the total number of terminals.
(3) Dimension b applies to metallized terminal and is measured between 0.25 and 0.30 mm from terminal tip.
(4) Coplanarity applies to the exposed heat sink slug as well as the terminal.
(5) The pin #1 identifier may be either a mold or marked feature, it must be located within the zone indicated.
VARIATION 1
DIM.
MILLIMETERS
VARIATION 2
INCHES
MILLIMETERS
INCHES
MIN.
NOM
MAX.
MIN.
NOM
MAX.
MIN.
NOM
MAX.
MIN.
NOM
MAX.
A
0.80
0.90
1.00
0.031
0.035
0.039
0.80
0.90
1.00
0.031
0.035
0.039
0.012
b
0.18
0.23
0.30
0.007
0.009
0.012
0.18
0.25
0.30
0.007
0.010
D
2.90
3.00
3.10
0.114
0.118
0.122
2.90
3.00
3.10
0.114
0.118
0.122
D2
1.00
1.15
1.25
0.039
0.045
0.049
1.50
1.70
1.80
0.059
0.067
0.071
E
2.90
3.00
3.10
0.114
0.118
0.122
2.90
3.00
3.10
0.114
0.118
0.122
E2
1.00
1.15
1.25
0.039
0.045
0.049
1.50
1.70
1.80
0.059
0.067
0.071
0.50
0.012
0.020
0.30
0.50
0.012
e
L
0.50 BSC
0.30
0.40
0.020 BSC
0.50 BSC
0.016
0.40
0.020 BSC
0.016
0.020
ECN: T16-0233-Rev. D, 09-May-16
DWG: 5899
Revision: 09-May-16
1
Document Number: 72208
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
1
Document Number: 91000