EE 340: Devices and Electronics
Instructor: Nauman Ahmad Zaffar
Year: 2011
Office No. & E-mail: SSE 9-313A, nauman.zaffar@lums.edu.pk
Semester: Fall
Office Hours: Tue 3pm – 4pm, Fri 12Noon-1pm
Category: Junior
Course Code: EE340 Course Title: Devices and Electronics
Cr. Hrs:
4
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Course Description:
This course lays down the foundations for the design of electronic systems for a variety
of applications. This includes the construction, characteristics and working of diodes,
bipolar junction transistors (BJT) and field effect transistors (FET). It will cover topics on
modeling of microelectronic devices, basic microelectronic circuit analysis and design,
physical electronics of semiconductor junction and MOS devices, development of circuit
models, and understanding the uses and limitations of various models. The course will
use incremental and large-signal techniques to analyze and design bipolar and field effect
transistor circuits as well as an overview of multistage amplifiers. The small signal
behavior of BJT and FET transistors is studied along with appropriate mathematical
models and frequency response. The course also provides an introduction to the design of
power amplifiers and switching circuits.
Course Status:
Core course for Electrical Engineering majors
Pre-requisites:
EE240: Circuits 1
Goals:
The goal of this course is to introduce the students to structure, device characteristics and
behavior of fundamental set of discrete electronic devices and develop skills needed for
analysis and design of electronic systems using these components.
Text book:
Semiconductor Device Fundamentals by Robert Pierret, Addison Wesley, 1996
Microelectronic Circuits by Sedra and Smith, 6th Edition, Oxford University Press, 2010
Supplementary Reading:
Microelectronic Devices & Circuits by Clifton Fonstad, 2006 Electronic Edition,
http://dspace.mit.edu/handle/1721.1/34219
Lectures and Examinations:
1
Two weekly lectures of 75 minutes duration each
One weekly lab of 100 minutes duration
Attendance is not compulsory, punctuality is desired
Two midterm examinations
Comprehensive final examination
Quizzes – ~ weekly
Assignments, including use of SPICE
TA/Lab Engineer for the course:
Ms. Bushra Gull
Mr. Syed Atif Adnan
Grading Scheme:
Quizzes:
Assignments:
Labs and Project:
Midterms:
Final:
15%
05%
10 + 10%
30%
30%
Note: All requests for re-checking must be submitted within 48-hours of announcement
of result.
Course Topics:
Lecture No.
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Course Topics
Semiconductors – General Introduction
Carrier modeling – energy bands and band gaps, Fermi energy
Doping/carrier concentration, transport mechanisms
Junction structure and electrostatics
Junction I-V characteristics
Small signal admittance – Junction capacitance, diffusion
admittance
Diode circuits – models and applications
Diode circuits – analysis and applications
MOSFET – Structure and device operation
MOSFET – Models and characteristics
MOSFET – Biasing and DC analysis
Midterm 1
MOSFET – Small signal models and analysis
MOSFET – Amplifier configurations
MOSFET – Amplifier characteristics
BJT – Structure and device operation
BJT – Models and characteristics
BJT – Biasing and DC analysis
BJT – Small signal models and analysis
BJT – Amplifier configurations and analysis
Midterm 2
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Transistor Switch and Inverter
Current Mirror configurations
Multistage amplifiers
Frequency response
Frequency response of amplifiers – low freq.
High Frequency response
Power Amplifiers – Introduction
Description of Laboratory Exercises
Following are some of the labs that will be conducted during this course. Handouts of
actual lab to be conducted will be provided in the preceding week.
Lab No. 1: Diode applications.
Half wave and full wave rectifier design, zener regulation, clippers and clampers.
Lab No. 2: Basic field effect transistor
Biasing and characteristic curves
Lab No. 3: Amplifiers built using field effect transistor
Different configurations
Lab No. 4: Basic bipolar junction transistor
Biasing schemes, characteristic curves
Lab No. 5: Amplifiers built using bipolar junction transistor
Different configurations of low frequency and high frequency amplifiers
Lab No. 6: Multistage amplifiers
Different configurations and characteristics
Lab No. 7: Transistor as a switch
Biasing, characteristics and frequency response
Lab No. 8: Flip Flops
Bistable, astable and monostable multivibrators
Lab No. 9: Output Stages of bipolar junction transistor power amplifiers
Design of Class-A, Class-B and Class-AB amplifiers
Final Project: Group project (3 members maximum)
TBD. Proposal to be submitted in week 9.
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