A Product Line of
Diodes Incorporated
ZXMN3AMC
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
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ID max
RDS(on) max
V(BR)DSS
TA = 25°C
(Notes 4 & 7)
120mΩ @ VGS = 10V
3.7A
180mΩ @ VGS = 4.5V
3.0A
30V
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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DC-DC Converters
Power management functions
Disconnect switches
Portable applications
DFN3020B-8
D2
D2
Top View
Case: DFN3020B-8
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
D1
S2
G1
G1
D2
G2
S1
S1
Bottom View
Pin-Out
Bottom View
D1
D1
D1
D2
G2
Low profile package, for thin applications
Low RθJA, thermally efficient package
2
6mm footprint, 50% smaller than TSOP6 and SOT23-6
Low on-resistance
Fast switching speed
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Pin 1
S2
Equivalent Circuit
Ordering Information (Note 3)
Part Number
ZXMN3AMCTA
Notes:
Marking
DNB
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DNB
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
DNB = Product Type Marking Code
Top View, Dot Denotes Pin 1
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A Product Line of
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ZXMN3AMC
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body diode)
Pulse Source Current (Body diode)
Thermal Characteristics
(Notes 4 & 7)
TA = 70°C (Notes 4 & 7)
(Notes 3 & 7)
(Notes 6 & 7)
(Notes 4 & 7)
(Notes 6 & 7)
ID
IDM
IS
ISM
Unit
Value
1.50
12
2.45
19.6
1.13
9
1.70
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
V
A
@TA = 25°C unless otherwise specified
Characteristic
Symbol
(Notes 3 & 7)
Power Dissipation
Linear Derating Factor
(Notes 4 & 7)
PD
(Notes 5 & 7)
(Notes 5 & 8)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Value
30
±20
3.7
3.0
2.9
13
3.2
13
(Notes 3 & 7)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 7 & 9)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2
3. For a device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.
4. Same as note (3) except the device is measured at t < 5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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A Product Line of
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ZXMN3AMC
RDS(on)
Limited
10
ID Drain Current (A)
Max Power Dissipation (W)
Thermal Characteristics
1
DC
1s
100ms
100m
10m
10ms
8 sq cm 2oz Cu
One active die
Single Pulse, Tamb=25°C
1ms 100us
1
10
2.0
10 sq cm 1oz Cu
Two active die
1.5
8 sq cm 2oz Cu
One active die
10 sq cm 1oz Cu
One active die
1.0
0.5
0.0
0
VDS Drain-Source Voltage (V)
25
50
75
100
125
150
Temperature (°C)
Derating Curve
Safe Operating Area
225
Thermal Resistance (°C/W)
80
Thermal Resistance (°C/W)
8 sq cm 2oz Cu
One active die
60
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
200
1oz Cu
One active die
175
1oz Cu
Two active die
150
125
100
75
50
2oz Cu
One active die
2oz Cu
Two active die
25
0
0.1
Pulse Width (s)
1
10
100
Board Cu Area (sqcm)
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
PD Dissipation (W)
3.0
2.5
2.0
2oz Cu
Two active die
T amb=25°C
T j max=150°C
Continuous
2oz Cu
One active die
1.5
1.0
0.5
1oz Cu
One active die
0.0
0.1
1
1oz Cu
Two active die
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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A Product Line of
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ZXMN3AMC
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
-
0.5
±100
V
μA
nA
ID = 250μA, VGS = 0V
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.0
RDS(ON)
-
gfs
VSD
trr
Qrr
-
3.0
0.120
0.180
0.95
-
V
Static Drain-Source On-Resistance (Note 10)
0.100
0.140
3.5
0.85
17.7
13.0
S
V
ns
nC
ID = 250μA, VDS = VGS
VGS = 10V, ID = 2.5A
VGS = 4.5V, ID = 2.0A
VDS = 10V, ID = 2.5A
IS = 1.7A, VGS = 0V
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
190
38
20
2.3
3.9
0.6
0.9
1.7
2.3
6.6
2.9
-
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
Notes:
Ω
Test Condition
IS = 2.5A, di/dt = 100A/µs
VDS = 25V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V
VGS = 10V
VDS = 15V
ID = 2.5A
VDS = 15V, ID = 2.5A
VGS = 10V, RG = 6Ω
10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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ZXMN3AMC
Typical Electrical Characteristics
10V
7V
T = 150°C
5V
4.5V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
10
4V
3.5V
1
3V
VGS
0.1
2.5V
0.1
1
10
5V
4.5V
4V
3.5V
3V
2.5V
VGS
0.1
2V
10
0.1
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
VDS = 10V
T = 150°C
1
T = 25°C
0.1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Normalised RDS(on) and VGS(th)
10
ID Drain Current (A)
7V
1
VDS Drain-Source Voltage (V)
VGS = 10V
1.4
1.0
3.5V
VGS
4V
4.5V
1
5V
7V
0.1
10V
T = 25°C
0.1
1
ID Drain Current (A)
10
On-Resistance v Drain Current
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
VGS(th)
0.8
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
3V
RDS(on)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
2.5V
ID = 2.5A
1.2
VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (W)
10V
10
T = 150°C
1
T = 25°C
0.1
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXMN3AMC
Typical Electrical Characteristics - Continued
10
VGS = 0V
250
f = 1MHz
200
CISS
150
COSS
CRSS
100
50
0
0.1
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
ID = 2.5A
8
6
VDS = 15V
4
2
0
0
1
2
3
4
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
Switching time test circuit
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ZXMN3AMC
Package Outline Dimensions
A
DFN3020B-8
Dim Min Max Typ
A
0.77 0.83 0.80
A1
0
0.05 0.02
A3
0.15
b
0.25 0.35 0.30
D
2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e
0.65
E
1.95 2.075 2.00
E2 0.43 0.63 0.53
L
0.25 0.35 0.30
Z
0.375
All Dimensions in mm
A3
A1
D
D4
D4
D2
E
E2
Z
b
e
L
Suggested Pad Layout
C
X
Y1
G1
G
Y2
Y
X1
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
Dimensions
C
G
G1
X
X1
Y
Y1
Y2
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Value (in mm)
0.650
0.285
0.090
0.400
1.120
0.730
0.500
0.365
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN3AMC
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
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December 2010
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