A Product Line of
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DMN4015LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
TA = 25°C
15mΩ @ VGS= 10V
20.8A
20mΩ @ VGS= 4.5V
18.0A
•
Low on-resistance
•
Fast switching speed
•
“Green” component and RoHS compliant (Note 1)
40V
Mechanical Data
•
Case: TO252-3L
Description and Applications
•
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Backlighting
•
Marking Information: See Below
•
DC-DC Converters
•
•
Ordering Information: See Below
Power management functions
•
Weight: 0.33 grams (approximate)
D
D
G
D
G
TOP VIEW
Ordering Information
Note:
S
S
Equivalent Circuit
PIN OUT -TOP VIEW
(Note 1)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN4015LK3-13
N4015L
13
16
2,500
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YYWW
N4015L
DMN4015LK3
Document Revision: 1
= Manufacturer’s Marking
N4015L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 09 = 2009)
WW = Week (01-52)
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DMN4015LK3
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
TA=70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
ID
IDM
IS
ISM
Value
40
±20
20.8
16.6
13.5
72.8
13.2
72.8
Unit
V
V
Value
4.36
34.8
10.3
82.4
2.19
17.5
28.6
12.1
57.0
0.85
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Note 2)
Power dissipation
Linear derating factor
(Note 3)
PD
(Note 5)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 2)
(Note 3)
(Note 5)
(Note 6)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN4015LK3
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DMN4015LK3
Thermal Characteristics
100
RDS(on)
Limited
ID Drain Current (A)
ID Drain Current (A)
100
10
DC
1
1s
100ms
100m
10ms
Tamb=25°C
25mm x 25mm
1oz FR4
10m
100m
10
100µs
1
40
D=0.5
D=0.1
D=0.2
D=0.05
10
Single Pulse
0
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
10
Single Pulse
Tamb=25°C
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ 1m
10m 100m
1
10
100
Pulse Width (s)
Tamb=25°C
50mm x 50mm
2oz FR4
25
20
D=0.5
15
10
D=0.1
D=0.2
D=0.05
5
0
100µ 1m
Single Pulse
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
1k
Max Power Dissipation (W)
Max Power Dissipation (W)
1
30
Tamb=25°C
25mm x 25mm
1oz FR4
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
0
Pulse Power Dissipation
Document Revision: 1
100µs
Safe Operating Area
Transient Thermal Impedance
DMN4015LK3
1ms
VDS Drain-Source Voltage (V)
60
20
10ms
Tamb=25°C
50mm x 50mm
2oz FR4
10m
0.1
10
Safe Operating Area
30
1s
100ms
VDS Drain-Source Voltage (V)
50
DC
1
100m
1ms
RDS(on)
Limited
20
40
60
80 100 120 140 160
Temperature (°C)
Derating Curve
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DMN4015LK3
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
40


V
Zero Gate Voltage Drain Current
IDSS


0.5
µA
VDS= 40V, VGS= 0V
Gate-Source Leakage
IGSS


±100
nA
VGS= ±20V, VDS= 0V
VGS(th)
1.0

3.0
V
ID = 250µA, VGS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
15
RDS (ON)


Forward Transconductance (Notes 7 & 8)
gfs

35.3

Diode Forward Voltage (Note 7)
VSD

0.87
Reverse recovery time (Note 8)
trr
141
Reverse recovery charge (Note 8)
Qrr

872
Static Drain-Source On-Resistance (Note 7)
20
m•
ID= 250µA, VDS= VGS
VGS= 10V, ID= 14A
VGS= 4.5V, ID= 11A
S
VDS= 15V, ID= 12A
1.0
V
IS= 14A, VGS= 0V

ns

nC
IS= 14A, di/dt= 100A/µs
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss

2072

pF
Output Capacitance
Coss

338

pF
Reverse Transfer Capacitance
Crss

193

pF
Total Gate Charge
Qg

21

nC
Total Gate Charge
Qg

42

nC
Gate-Source Charge
Qgs

7.3

nC
Gate-Drain Charge
Qgd

10.7

nC
Turn-On Delay Time (Note 9)
tD(on)

7.8

ns
Turn-On Rise Time (Note 9)
tr

18.5

ns
Turn-Off Delay Time (Note 9)
tD(off)

37.3

ns
tf

14.9

ns
Turn-Off Fall Time (Note 9)
Notes:
VDS= 20V, VGS= 0V
f= 1MHz
VGS= 4.5V
VGS= 10V
VDS= 20V
ID= 14A
VDD= 20V, VGS= 10V
ID= 14A, RG ≅ 6.0Ω
7. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
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DMN4015LK3
Typical Characteristics
T = 25°C
4V
3V
1
0.1
2.5V
VGS
0.01
0.1
1
2.5V
2V
0.1
T = 25°C
0.01
1
2
3
4
RDS(on) Drain-Source On-Resistance (Ω)
Normalised RDS(on) and VGS(th)
0.1
10
10
VGS
2.5V
3V
3.5V
1
T = 25°C
0.1
4V
10V
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
VGS = 10V
ID = 14A
1.4
RDS(on)
1.2
1.0
0.8
0.4
-50
VGS(th)
VGS = VDS
ID = 250uA
0.6
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
ID Drain Current (A)
T = 150°C
Typical Transfer Characteristics
Document Revision: 1
1
1.6
VDS = 10V
VGS Gate-Source Voltage (V)
DMN4015LK3
1.5V
0.1
Output Characteristics
1
0.01
0.01
VGS
VDS Drain-Source Voltage (V)
Output Characteristics
1E-3
3V
1
0.01
10
3.5V
10
VDS Drain-Source Voltage (V)
10
T = 150°C
10V
3.5V
10
ID Drain Current (A)
ID Drain Current (A)
10V
10
1
T = 150°C
0.1
T = 25°C
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
10
VGS = 0V
f = 1MHz
2500
2000
CISS
COSS
1500
CRSS
1000
500
0
0.1
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
C Capacitance (pF)
3000
8
6
4
VDS = 20V
ID = 14A
2
0
0
5
10
15
20
25
30
35
40
45
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Same as
D.U.T
Q GD
Q GS
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
tr
td(on)
t(on)
td(off)
tr
t(on)
Switching time waveforms
DMN4015LK3
Document Revision: 1
Switching time test circuit
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DMN4015LK3
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Min
Max
Min
Max
A
0.086
0.094
2.18
2.39
e
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1
0.205
-
5.21
-
• 1°
0°
10°
0°
10°
E
0.250
0.265
6.35
6.73
•°
0°
15°
0°
15°
E1
0.170
-
4.32
-
-
-
-
-
-
DMN4015LK3
Document Revision: 1
Min
Millimeters
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Max
Min
0.090 BSC
Max
2.29 BSC
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DMN4015LK3
Suggested Pad Layout
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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