Agilent 1GC1-8038 50 GHz Frequency Doubler

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Agilent 1GC1-8038
50 GHz Frequency Doubler
TC221 Data Sheet
Features
• Conversion Efficiency:
−12 dB Typical
• 1/2 and 3/2 spurs:
15 dBc Typical
Chip Size:
Chip Size Tolerance:
Chip Thickness:
890 × 500 µm (35.0 x 19.7 mils)
±10 µm (±0.4 mils)
127 ± 15 µm (5.0 ± 0.6 mils)
• Broad Bandwidth, 20–50 GHz
Output Frequency
Description
[1]
The TC221 is a passive diode fre- Absolute Maximum Ratings
quency doubler. It is specified to
Symbol
Parameters/Conditions
Min.
Max.
Units
operate with a 20–50 GHz output
Max Input Power
22
dBm
frequency. Conversion efficiency Pin,max
DC voltage at Input
−9
9
V
is usually around −12 dB. The de- Vdcin
vice has low 1/2 and 3/2 spuriDC voltage at Output
−9
9
V
Vdcout
ous output, typically 15 dBc or
Operating Case Temperature
0
+85
°C
Tcase
better. The doubler can be biased T
Storage Temperature
−55
+150
°C
st
through on–chip resistors to alMax. Assembly Temperature
Tmax
+300
°C
low operation at low input lev(60 seconds max)
els. Up to 22 dBm at the input
Vbias,max
Voltage Limits at +/− Bias Pads
−4
+4
V
can be accommodated. On–chip Notes:
DC blocking capacitors are in1. Operation in excess of any one of these may result in permanent damage to this device.
cluded at the input and output.
Tcase = 85°C except for Top, Tst, and Tmax, unless noted.
1
RF Specifications
(TA = 25°C, Pin = 15 dBm, Z0 = 50Ω, BIAS+=1.0, adj. for 5mA [≈ 1V], BIAS−=0V)
Symbol
Parameters/Conditions
Min.
Typ.
CE10
Conversion Efficiency at 10.0 GHz Input
−15
−12
dB
CE17
Conversion Efficiency at 17 GHz Input
−14
−12
dB
CE25
Conversion Efficiency at 25 GHz Input
−14
−12
dB
RLin
Input Return Loss, 10–25 GHz
10
dB
Fund25
Fund. Feedthru of 25.0 GHz (relative to 50 GHz output)
20
dBc
17
Max.
Units
Typical Performance
("Bias" means bias + SMA, Bias– 0V. "No bias" means bias + open, bias– open)
0
0
–10
–4
–8
dBc
dB
5 mA Bias+
–12
Bias+, Bias– open
–16
–20
–30
5
10
20
15
Bias+ open
–40
–50
0
0V Bias–
5 mA Bias+
–20
0V Bias–
25
30
Bias– open
0
0
20
25
30
0
–5
–4
Conv. Eff (dB)
–10
dBc
15
Figure 2.
Typical TC221 Fundamental Feedthru
vs. Freq. at Pin = 15 dBm
Figure 1.
Typical TC221 Conversion Efficiency
vs. Freq. at Pin = 15 dBm
–15
–20
–8
–12
–16
–25
0
2
4
6
8
10
12
Input Frequency (GHz)
14
Figure 3.
Typical TC221 3rd Harmonic
vs. Freq. at Pin = 15 dBm
2
10
Input Frequency (GHz)
Input Frequency (GHz)
–30
5
16
18
–20
0
5
10
15
Pin (dBm)
20
25
30
Figure 4.
Typical TC221 Conversion Efficiency
vs. Freq. at Pin at f = 10 GHz
TC221/rev.3.0
0
–4
–4
–8
Conv. Eff. (dB)
Conv. Eff. (dB)
0
5 mA Bias
–12
–16
–20
5
10
–12
No Bias
–16
No Bias
0
5 mA Bias
–8
15
20
–20
25
0
Pin (dBm)
–4
–5
20
25
–10
–8
Fund
No Bias
–12
dBc
Conv. Eff. (dB)
0
–15
–20
5 mA Bias
–16
–25
0
5
10
15
20
Pin (dBm)
–30
25
3rd
0
Figure 7.
Typical TC221 Conversion Efficiency
vs. Pin at Freq. = 25 GHz
5
10
15
Pin (dBm)
–0
–0
–5
–5
–10
dBc
Fund
–15
–20
–25
–25
3rd
5
10
15
Pin (dBm)
20
25
Figure 9.
Typical TC221 Spurious
vs. Pin at Freq. = 10 GHz, with Bias
TC221/rev.3.0
25
30
30
3rd
–15
–20
0
20
Figure 8.
Typical TC221 Spurious
vs. Pin at Freq. = 10 GHz, No Bias
–10
dBc
15
Figure 6.
Typical TC221 Conversion Efficiency
vs. Pin at f req. = 20 GHz
0
–30
10
Pin (dBm)
Figure 5.
Typical TC221 Conversion Efficiency
vs. Pin at Freq. = 15 GHz
–20
5
–30
Fund
0
5
10
15
Pin (dBm)
20
25
Figure 10.
Typical TC221 Spurious
vs. Pin at Freq.= 15 GHz, No Bias
3
–0
–0
–5
–5
–10
3rd
dBc
dBc
–10
–15
–20
–15
–20
Fund
–25
–25
–30
–30
0
5
10
15
20
25
Fund
0
Pin (dBm)
15
20
25
Figure 12.
Typical TC221 Spurious
vs. Pin at Freq. = 20 GHz, with Bias
–0
–0
–5
–5
–10
–10
dBc
dBc
10
Pin (dBm)
Figure 11.
Typical TC221 Spurious
vs. Pin at Freq. = 15 GHz, with Bias
–15
–15
–20
–20
Fund
–25
–30
5
0
5
10
15
Fund
–25
20
–30
25
0
Pin (dBm)
5
10
15
20
25
Pin (dBm)
Figure 13.
Typical TC221 Spurious
vs. Pin at Freq. = 20 GHz, no Bias
Figure 14.
Typical TC221 Spurious
vs. Pin at Freq. = 25 GHz, no Bias
–0
–5
dBc
–10
–15
–20
Fund
–25
–30
0
5
10
15
20
25
Pin (dBm)
Figure 15.
Typical TC221 Spurious
vs. Pin at Freq. = 25 GHz, with Bias
4
TC221/rev.3.0
Applications
The TC221 frequency doubler is
designed for use in microwave
instrumentation source applications.
Operation
The TC221 is a passive diode doubler, with "+" and "−" DC bias pads
included to optimize performance
at low input power levels. Bias
can be applied through either the
"+" or "−" bias pad or both, with the
other pad either grounded or
open. The optimum bias will depend on frequency and input power level, and must be empirically
optimized for each application.
DC blocking capacitors have been
included at the input and output
of the device for ease of interface
to other devices.
The device should be mounted
using epoxy or solder to a metal
case with thermal conductivity
equal to, or better than, aluminum, and the case temperature
should not exceed 85°C. This will
keep the diode junctions at or below 130°C for an input power of
22 dBm, and will keep the rectified diode currents well within
acceptable limits for reliable operation.
Assembly Techniques
Epoxy die–attach using conductive epoxy or solder die–attach
using a fluxless AuSu solder preform can be used for assembly.
Gold thermosonic wedge bonding with 0.7 mil diameter Au wire
is recommended for all bonds.
Tool force should be 22 ± 1 gram,
stage temperature should be 150
± 2°C, and ultrasonic power and
duration should be 64 ± 1 dB
and 76 ± 8 msec, respectively.
The bonding pad and chip backside metallization is gold.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical factors in successful GaAs MMIC
performance and reliability.
Agilent application note #54,
"GaAs MMIC ESD, Die Attach and
Bonding Guidelines" provides basic information on these subjects.
Figure 16.
TC221 Simplified Schematic
TC221/rev.3.0
5
500
430
250
250
70
0
0
70
380
820
890
Figure 17.
TC221 Bond Pad Locations and Chip Dimensions
(all dimensions in um)
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications.
In this data sheet the term typical refers to the 50th percentile performance. For additional information contact WPTC Marketing at 1-577-4482.
6
TC221/rev.3.0
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