VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
VBPW34S
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 168 h, MSL 3, acc. J-STD-020
VBPW34SR
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
21733
DESCRIPTION
APPLICATIONS
VBPW34S and VBPW34SR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 7.5 mm2 sensitive area
detecting visible and near infrared radiation.
• High speed photo detector
PRODUCT SUMMARY
Ira (μA)
ϕ (deg)
λ0.1 (nm)
VBPW34S
55
± 65
430 to 1100
VBPW34SR
55
± 65
430 to 1100
PACKAGE FORM
COMPONENT
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
VBPW34S
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Gullwing
VBPW34SR
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Reverse gullwing
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
SYMBOL
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Junction temperature
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.2, 24-Aug-11
Acc. reflow solder profile fig. 8
Document Number: 81128
1
For technical questions, contact: detectortechsupport@vishay.com
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VBPW34S, VBPW34SR
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Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
MAX.
UNIT
1
1.3
V
Iro
2
30
nA
VR = 0 V, f = 1 MHz, E = 0
CD
70
VR = 3 V, f = 1 MHz, E = 0
CD
25
40
pF
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
VR = 10 V, E = 0
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
MIN.
60
V
pF
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
50
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
55
μA
45
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
940
nm
Range of spectral bandwidth
λ0.1
430 to 1100
nm
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√Hz
Rise time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tf
100
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.2, 24-Aug-11
1.4
0
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81128
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBPW34S, VBPW34SR
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Vishay Semiconductors
S(λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.8
0.6
0.4
0.2
0
0.1
1
10
Ee - Irradiance (mW/cm2)
12787
1.0
350
550
Fig. 3 - Reverse Light Current vs. Irradiance
750
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
Srel - Relative Radiant Sensitivity
Ira - Reverse Light Current (µA)
0.5 mW/cm 2
0.2 mW/cm 2
10
0.1 mW/cm 2
0.05 mW/cm 2
λ = 950 nm
0.1
1
10
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
100
VR - Reverse Voltage (V)
12788
10°
30°
1 mW/cm 2
1
1150
950
λ - Wavelength (nm)
94 8420
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
80°
0.6
0.4
0.2
0
94 8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.2, 24-Aug-11
Document Number: 81128
3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
0.1 -0.1
0.15 ± 0.02
1.2 ± 0.1
(0.47 ref.)
0.75 ± 0.05
PACKAGE DIMENSIONS FOR VBPW34S in millimeters
Flat area 0.3 min.
4.4 ± 0.1
0.18 ± 0.2
2.2
Chip Size
0.8 ± 0.1
1.6 ± 0.1
Cathode
Anode
3.9 ± 0.1
1.95
3x3
1 ± 0.15
6.4 ± 0.3
technical drawings
according to DIN
specifications
Recommended solder pad
8.9
1.8
5.4
Drawing-No.: 6.541-5086.01-4
Issue: 1; 15.04.10
22105
Rev. 1.2, 24-Aug-11
Document Number: 81128
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
(0.47 ref.)
0.1 min.
Flat area 0.3 min
0.15 ± 0.02
1.2 ± 0.1
0.75 ± 0.05
PACKAGE DIMENSIONS FOR VBPW34SR in millimeters
4.4 ± 0.1
0.18 ± 0.2
2.2
Chip Size
3.9 ± 0.1
Cathode
Anode
0.8 ± 0.1
1.6 ± 0.1
1.95
3x3
1 ± 0.3
6.4 ± 0.3
Recommended solder pad
technical drawings
according to DIN
specifications
8.9
1.8
5.4
Drawing-No.: 6.541-5085.01-4
Issue: 1; 15.04.10
22104
Rev. 1.2, 24-Aug-11
Document Number: 81128
5
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
TAPING DIMENSIONS FOR VBPW34S in millimeters
21730
TAPING DIMENSIONS FOR VBPW34SR in millimeters
21731
Rev. 1.2, 24-Aug-11
Document Number: 81128
6
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBPW34S, VBPW34SR
www.vishay.com
Vishay Semiconductors
REEL DIMENSIONS FOR VBPW34S AND VBPW34SR in millimeters
21732
SOLDER PROFILE
DRYPACK
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
FLOOR LIFE
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020
Rev. 1.2, 24-Aug-11
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
Document Number: 81128
7
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16
1
Document Number: 91000