Syllabus
Fall 2015
EE87032
Tunnel Field-Effect Transistors
Instructor:
Alan Seabaugh
Time
Tuesday, Thursday, 11 am−12:15 pm
Class:
DeBartolo Hall 308
Prerequisites: EE60587 Quantum Mechanics, EE60556 Semiconductor Physics,
EE60566 Solid State Devices. Or equivalent
Texts:
Papers and selected textbook chapters.
Description: Tunnel field-effect transistors (TFETs) represent a class of transistors that have
subthreshold swing less than the Boltzmann limit of 60 mV/decade at room temperature.
Transistors with steep subthreshold swing can be operated at lower voltages and lower power
than conventional transistors, promising electronic systems with diminishing power
requirements. The goal of this course is to develop a quantitative understanding of the transport
physics in TFETs and other steep swing transistors.
Class: Classes will consist of instructor and student lectures followed by discussion. The best
way to learn is to teach1.
Homework: Papers and texts will be assigned for each class. Homework will consist of
completing analytic derivations developed in the readings and extending analysis. Open
discussion between students is encouraged, but students will be required to turn in their own
work.
Box:
Homework (derivations and analysis) will uploaded each week
Grading:
Homework (30%), lectures and class participation (50%), final exam (20%)
Office:
Fitzpatrick 230A
Office hours:
Contact Barbara Walsh (bwalsh4@nd.edu or 631-3058) to arrange
A selective bibliography follows:
1
F. Oppenheimer, Particle Physicist, en.wikipedia.org/wiki/Frank_Oppenheimer
EE67052 Course Bibliography
(content to be revised based on recent publications)
S. Agarwal and E. Yablonovitch, “Band-edge steepness obtained from Esaki/backward diode
current-voltage characteristics,” IEEE Trans. Electron Dev., vol. 61, no. 5, pp. 1488–1493, Apr.
2014.
J. Appenzeller, Y. Lin, J. Knoch, and P. Avouris, “Band-to-band tunneling in carbon nanotube
field-effect transistors,” Phys. Rev. Lett., vol. 93, no. 19, p. 196805, 2004.
G. Binnig, H. Rhorer, Ch. Gerber, and E. Weibel, Tunneling through a controllable vacuum
gap,” Appl. Phys. Lett., vol. 40, no. 2, pp. 178-180, 1982.
L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double barriers,” Appl.
Phys. Lett., vol. 24, pp. 593–595, 1974.
L. De Michielis, L. Lattanzio, and A. M. Ionescu, “Understanding the superlinear onset of
tunnel-FET output characteristic,” IEEE Electron Dev. Lett., vol. 33, pp. 1523–1525, 2012.
L. De Michielis, L. Lattanzio, K.E. Moseland, H. Riel, and A. M. Ionescu, “Tunneling and
occupancy probabilities: how do they affect tunnel-FET behavior?” IEEE Electron Dev. Lett.,
vol. 34, no. 6, pp. 726-728, 2013.
C. B. Duke, “Tunneling in Solids,” Academic Press, pp. 1-13, 1969.
L. Esaki, “New phenomenon in narrow germanium p-n junctions,” Phys Rev, vol. 109, no. 2, pp.
603–604, 1958.
H. Flietner, “E(k) relation for a 2-band scheme of semiconductors and application to metalsemiconductor contact,” Phys. Status Solidi B, vol. 54, no. 1, pp. 201–208, 1972.
D. J. Griffiths, “Introduction to quantum mechanics,” Prentice Hall, 1st ed., pp. 274-297 1995.
H. Ilatikhameneh, G. Klimeck, J. Appenzeller, and R. Rahman, “Scaling theory of electrically
doped 2D transistors,” IEEE Electron Device Lett., vol. 36, no. 7, pp. 726–728, Jun. 2015.
D. Jena, T. Fang, Q. Zhang, and H. Xing, “Zener tunneling in semiconducting nanotube and
graphene nanoribbon p-n junctions,” Appl. Phys. Lett., vol. 93, pp. 112106, 2008.
D. Jena, “The WKB Method,” Chap. 39, p. 19. 2013, unpublished
E. O. Kane, “Zener tunneling in semiconductors, J. Phys. Chem. Sol., vol. 12, pp. 181-188, 1959.
J. Knoch, S. Mantl, and J. Appenzeller, “Impact of the dimensionality on the performance of
tunneling FETs: bulk versus one-dimensional devices,” Solid State Electron., vol. 51, no. 4, pp.
572–578, 2007.
2
J. Knoch and J. Appenzeller, “Tunneling phenomena in carbon nanotube field-effect transistors,”
Phys. Stat. Sol. (a), vol. 205, no. 4, pp. 679–694, Apr. 2008.
N. Ma and D. Jena, “Interband tunneling in two-dimensional crystal semiconductors,” Appl.
Phys. Lett., vol. 102, no. 13, p. 132102, 2013.
N. Ma and D. Jena, “Erratum: ‘Interband tunneling in two-dimensional crystal semiconductors’
[Appl. Phys. Lett. 102, 132102 (2013)],” Appl Phys Lett, vol. 102, no. 18, pp. 189902, 2013.
J. L. Moll, Physics of Semiconductors, McGraw-Hill, pp. 240-259, 1964.
F. A. Padovani and R. Stratton, “Field and thermionic-field emission in Schottky barriers,” Solid
State Electron., vol. 9, no. 7, pp. 695–707, 1966.
S. Salahuddin and S. Datta, “Use of negative capacitance to provide voltage amplification for
low power nanoscale devices,” Nano Lett., vol. 8, pp. 405-410, 2008.
A. Seabaugh and R. Lake, “Tunnel diodes,” Encyclop. Appl. Phys. 22 (Am. Inst. Phys. VCH
Pub. NY, 1998) pp. 335-359.
A. C. Seabaugh and Q. Zhang, “Low-voltage tunnel transistors for beyond CMOS logic,” Proc.
IEEE, vol. 98, pp. 2095–2110, 2010.
P. M. Solomon, “Inability of single carrier tunneling barriers to give subthermal subthreshold
swings in MOSFETs,” IEEE Electron Device Lett., vol. 31, no. 6, pp. 618–620, May 2010.
Y. Taur, J. Wu, and J. Min, “An analytic model for heterojunction tunnel FETs with exponential
barrier,” IEEE Tran. Electron Dev., vol. 62, no. 5, pp. 1399–1404, Apr. 2015.
R. Tsu and L. Esaki, “Tunneling in a finite superlattice,” Appl. Phys. Lett., vol. 22, no. 11, pp.
562–564, 1973.
W. G. Vandenberghe, A. S. Verhulst, K.-H. Kao, K. D. Meyer, B. Soree, W. Magnus, and G.
Groeseneken, “A model determining optimal doping concentration and material’s band gap of
tunnel field-effect transistors,” App.l Phys. Lett., vol. 100, no. 19, p. 193509, 2012.
Q. Zhang, T. Fang, H. Xing, A. Seabaugh, and D. Jena, “Graphene nanoribbon tunnel
transistors,” IEEE Electron Dev. Lett., vol. 29, no. 12, pp. 1344–1346, 2008.
Q. Zhang, Y. Lu, C. A. Richter, D. Jena, and A. Seabaugh, “Optimum bandgap and supply
voltage in tunnel FETs,” IEEE Trans. Electron Dev., vol. 61, no. 8, pp. 2719–2724, Aug. 2014.
J. Wu, J. Min, and Y. Taur, “Short-channel effects in tunnel FETs,” IEEE Trans. Electron Dev.,
vol. 62, no. 9, pp. 3019–3024, Aug. 2015.
3