ISSN: 1863-5598
Electronics in Motion and Conversion
ZKZ 64717
03-12
March 2012
ACCELERATING
YOUR PROJECTS
Welcome to the House of Competence.
GvA is your expert in individual problem solutions for all sectors of
power electronics – state of the art know how and profound experience
as an engineering service provider, manufacturer and distributor.
Consulting – Design & Development – Production – Distribution
GvA Leistungselektronik GmbH | Boehringer Straße 10 - 12 | D-68307 Mannheim
Tel +49 (0) 621/7 89 92-0 | www.gva-leistungselektronik.de | info@gva-leistungselektronik.de
Viewpoint
The Next Show is right around the Corner . . . . . . . . . . . . . . . . . . . . 4
Events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
News . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-8
designhouse
Blue Product of the Month
Silicon Carbide Power Devices in Chip Form
to Enable More Efficient Power Electronic Modules
Cree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Green Product of the Month
Current sensor controls high-speed electric motor
Isabellenhütte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Guest Editorial
The Augurs Promise Inspiration for Spring
By Petra Haarburger, President, Mesago Messe Frankfurt . . . . . . 14
Market
Electronics Industry Digest
By Aubrey Dunford, Europartners . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Market
DC Building Power Gains Momentum
By Linnea Brush, Senior Analyst, Darnell . . . . . . . . . . . . . . . . . 18-19
Cover Story
Searching for the Golden Fleece
By Werner Bresch, GvA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-25
Communication Power
Implementing “Green Power” in Telecom Architecture
By Pietro Scalia,
EMEA Power Marketing Manager for Telecom . . . . . . . . . . . . . 26-28
Lighting
Spectral Tuning for White LED based Luminaries
By Brian Johnson, Lighting Specialist, Fairchild . . . . . . . . . . . . 30-32
efficiency solutions
by direct bond copper
Magnetic Materials
Advanced Ferrite Material for Photovoltaic Systems
Based on material of TDK-EPCOS . . . . . . . . . . . . . . . . . . . . . . 34-36
IGBTs
The Next Generation Chipset Technologies
for Higher Operating Temperatures
By A. Aydin, C. Corvasce,
ABB Switzerland Ltd., Semiconductors . . . . . . . . . . . . . . . . . . . 38-41
High thermal conductivity
Excellent for chip on board
Optimized heat spreading
C U RA M IK® D B C SUB S T R AT E
New Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42-56
Highly integrated cooler
Outstanding thermal
performance
Customized design
C U RA M IK® D BC C O O L E R
www.bodospower.com
curamik electronics GmbH
A division of Rogers Corporation
Am Stadtwald 2
D-92676 Eschenbach
Phone +49 9645 9222 0
info@curamik.com
www.curamik.com
www.rogerscorp.com/powerelectronics
The Gallery
2
Bodo´s Power Systems®
March 2012
www.bodospower.com
Expansion
n off Munich
Technologyy Developmentt Centre
e
The extended focus comprises
The newly formed R&D centre, located in Munich, provides
Device and process simulation
High Power Package development
Technologists and Application experts
for SuperJunction and Wide Bandgap Materials
Automotive High Voltage Technical Marketing
opportunities to new members to closely work with existing
Packaging Development Engineer
Device Simulation/Technology Experts
Job description:
Job description:
You will be responsible to investigate new materials for the power
semiconductor packaging, develop new packaging technologies
and processes. You will define the design of new power semiconductor packages based on requirements from different applications
in terms of functionality, quality and costs. Moreover you will
support the assembly lines in the assessment and introduction
of new assembly processes and equipment.
Development and architectural innovation for Fairchild´s next
generation High Voltage power devices including IGBT,
SuperJunction FETs, SiC and GaN devices. You will be closely
collaborating with teams in Sweden, US and Korea for process
and package development.
Job requirement:
We are looking for highly innovative and self-motivated individuals
with a Master or PhD degree in Microsystems Technology, Material
Science or Physics. At least 4 years experiences in the design of
power semiconductor packages are desired. Mechanical and
thermal simulation skills, experience with 3D mechanical CAD
experience is of advantage.
global Fairchild Technologists in US, Sweden and Korea, as
well as to work in partnerships with Research institutes and
hand selected partnership programs with competitors.
Job requirement:
We are looking for highly innovative and self-motivated individuals,
Master or PhD degree in Electrical engineering, Physics or similar.
At least 3 years of professional experience required.
Application and Marketing Manager,
Silicon Carbide Technology
Job description:
HV Technical Product Marketing Manager
Job description:
Work with automotive OEM’s and suppliers to understand EV/HEV
projects, requirements, and timing. Develop Fairchild product
roadmaps for HV IGBT’s, MOSFET’s, Rectifiers, and Gate Drivers
aligned with business strategy and opportunities and interface with
Technology Development to coordinate technology roadmaps.
Develop business cases for product developments and champion
through the process. Launch new products, manage roll out and
promotions to achieve objectives. Interface with automotive sales,
providing product technical training and support.
You will be adding value to the systems of our customers, and at
the same time realize and enabling the true value of Fairchild´s SiC
components. You are a strong driver and will develop yourself
towards a leading role and towards truly technology based
business and market development.
Your knowledge of manifold approaches on power stage design
impacts the rest of the system, e.g. cooling, control and filtering
will enable novel power conversion designs to make use of the
superior performances of our silicon carbide components.
Job requirement:
We are looking for innovative and self-motivated individuals,
Master degree in Electrical Engineering, Physics or similar is a
must, business background and Automotive experience is an
advantage. At least 3 years of professional experience required.
We are looking for highly innovative and self-motivated individuals
with Master or PhD degree in Electrical engineering, Physics or
similar. You have collected a solid background as power electronics
designer in the power conversion industry and a deep
understanding of power devices and converter systems.
At least 5 years of professional experience required. The location
of this role could be either Kista/Sweden or Munich/Germany.
We offer:
Contact:
Job requirement:
Start-up spirit in highly inspirational and expanding team
in Munich; space for fundamental and scientific research;
very competitive, performance oriented compensation
schemes; high strategic impact and visibility within a
global company.
Klaus Billig
Human Resources Manager Europe
Einsteinring 28
85609 Munich/Dornach
Tel.:
+49 (0)172 8565 125
eMail.: klaus.billig@fairchildsemi.com
VIEWPOINT
A Media
Katzbek 17a
D-24235 Laboe, Germany
Phone: +49 4343 42 17 90
Fax:
+49 4343 42 17 89
editor@bodospower.com
www.bodospower.com
Publishing Editor
Bodo Arlt, Dipl.-Ing.
editor@bodospower.com
Creative Direction & Production
Repro Studio Peschke
Repro.Peschke@t-online.de
Free Subscription to qualified readers
Bodo´s Power Systems
is available for the following
subscription charges:
Annual charge (12 issues) is 150 €
world wide
Single issue is 18 €
subscription@bodospower.com
circulation
print run
20 000
Printing by:
Central-Druck Trost GmbH & Co
Heusenstamm, Germany
A Media and Bodos Power Systems
assume and hereby disclaim any
liability to any person for any loss or
damage by errors or omissions in the
material contained herein regardless of
whether such errors result from
negligence accident or any other cause
whatsoever.
Events
Embedded world,
Nuremberg, Germany, Feb 28th- March 1st
www.embedded-world.de
Cips,
Nuremberg, Germany,March 6th-8th
www.cips-conference.de
New Energy Husum,
Germany, March 15th-18th
www.new-energy.de
PEMD Bristol, UK,
March 27th-29th
www.theiet.org/pemd
eCarTec Paris, France,
April 3rd-5th www.ecartec.de
expoelectronica,
Moscow Russia, April 11th-13th
http://expoelectronica.primexpo.com
PCIM Europe,
Nuremberg Germany, May 8th 10th
www.mesago.de/de/PCIM
SMT Hybrid,
Nuremberg Germany, May 8th 10th
www.mesago.de/de/SMT/home.htm
Simulation in Automotive Lightweight,
May 9th-10th
/www.vdi.de/simulationlightweight
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Bodo´s Power Systems®
The Next Show is right
around the Corner
One show precedes the next. We attended a
busy APEC Conference at Disney World.
Progress in new materials was a highlight
and will be covered in upcoming issues.
Conferences this year of interest the power
industry include the PCIM Europe in early
May in Nuremberg, the PCIM Asia in June in
Shanghai and EPE in September. In November, the bi-annual Electronica takes place in
Munich and shortly thereafter, there’s the
SPS/IPC/DRIVES in Nuremberg. These are
a just a few of the extensive number of
industry events which are continuously
updated in my magazine, on the website and
in the e-Newsletters.
I’d like to thank my team at APEC who
helped me meet my commitments while I
suffered from a sudden bad cold. My friend
Don Burke took on many of my editorial
briefings and Stephen Reiss handled meetings with our advertisers. It is so good to see
a team in action that works perfectly together. As a result, the magazine is growing
faster than any other medium in the power
electronics market segment, as a key customer commented, and includes contributed
articles and adverts from all areas of the
world.
Communication is the only way to progress.
We delivered twelve issues last year and will
continue this year each month, on time,
every time. So far this year we have published 188 pages and as a media partner,
Bodo’s Power Systems is internationally
positioned.
The PCIM in Nuremberg is right around the
corner in May. My Podium Discussion this
year will be “Efficient DC/DC Conversion,” as
always on Wednesday around lunchtime and
at the back of Hall 12. Commitments from
panel members are currently being finalized
and I will be able to provide details in the
next issue.
Best regards
March 2012
My Green Power Tip for March:
Vacation in a moderate climate zone to avoid
the need for heating or cooling. Not only will
you save energy, but you’ll also reduce the
risk of catching a nasty cold.
www.bodospower.com
Solar energy committed to a lifetime
of safety and performance
CTSR
LEM commits to renewable energy sources of the future by enabling control and ensuring
safety of today’s solar power solutions. CTSR transducers combine safety and performance,
accurately measuring small AC and DC leakage currents. Easy installation for single or three
phase residual current measurement: CTSR is today’s choice for the energy of tomorrow.
t Two nominal current ranges: 0.3 and 0.6 ARMS
t Printed circuit mounting
t Large 20.1 mm diameter aperture
t Available with primary inserted conductor
t +5 V single supply
t Up to 11 mm creepage and clearance distances
+ CTI 600 for high insulation
t Low offset drift
t –40 to +105° C operation
t Reference Voltage access and control
t Self-test and degauss
t High overload capability: 3300 A
www.lem.com
At the heart of power electronics.
NEWS
ITU Approves G3-PLC as a New Worldwide Smart Grid Standard
Maxim Integrated Products announces that
its G3-PLC™ protocol has been approved by
the International Telecommunications Union
(ITU) as a new low-frequency, OFDM-based
narrowband powerline communications (NBPLC) standard.
In partnership with Electricité Réseau Distribution France (ERDF) and Sagemcom,
Maxim developed the G3-PLC specification
to promote open-endedness and interoperability among smart grid implementations.
Currently, the G3-PLC is the only NB-PLC
standard that supports the IPv6 internet pro-
tocol to allow new internet-based energy
management systems. The specification also
optimizes bandwidth, corrects errors, and
provides a higher data rate that supports
two-way communication for demand
response and other smart grid applications.
The result is an increase in the performance
reliability of crossing transformers, enabling
a dramatic reduction in deployment costs.
Last year, Maxim introduced the MAX2992,
a PLC modem that pairs with the MAX2991
analog front-end (AFE) to provide the first
fully compliant G3-PLC chipset solution.
Today, several manufacturers offer ITU-compatible G3-PLC solutions based on this
chipset, and one such solution is already
being deployed in France. With the approval
of G3-PLC as an international standard and
with available solutions from multiple
sources, utility companies can now plan their
deployments utilizing G3-PLC to achieve
cost-effective smart grid systems with confidence.
.
www.maxim-ic.com
Next Generation of Products for the Smart Grid Market
Texas Instruments Incorporated announced
it has expanded its portfolio in utility metering, home and building automation and
Smart Grid infrastructure with technology
and tools that help developers create
secure, economical and future-proof solutions for the Smart Grid.
The world’s most accurate, flexible and
robust energy metering ICs
Demonstrating its commitment to advancing
the efficiency of utility metering, TI recently
introduced 24 new energy meter integrated
circuits (ICs) that deliver industry-leading
accuracy, flexibility, robustness and system
cost savings for 1-phase, 2-phase and 3phase electricity meter solutions. The new
MSP430F673x/F672x family of energy meter
ICs combines the lowest power, most
advanced metrology and clocking functionalities for high precision and robust electricity
measurements design. The new energy
meter ICs offer developers more flexibility in
electricity metering and energy monitoring
applications.
www.ti.com/smartgrid
Compatibility Partnership for Power MOSFETs
Fairchild Semiconductor and Infineon Technologies announced the extension of their
compatibility partnership to encompass
Fairchild's 5x6mm power stage asymmetric
dual MOSFET package.
Fairchild’s PowerTrench® power stage dual
asymmetric MOSFET modules are part of a
comprehensive portfolio of advanced MOSFET technology that provides power designers with a wide range of solutions for mission critical high efficiency information processing designs.
This extended collaboration which began in
2010 and is intended to provide customers
supply chain security while balancing the
drive towards best-in-class efficiency and
thermal performance in DC-DC buck conversion. It takes advantage of the expertise both
companies offer in asymmetric dual MOSFETs which can handle over 30A and
increase power density.
Fairchild Semiconductor is focused on developing, manufacturing and distributing semiconductor solutions to a wide range of end-
market customers. Fairchild’s focus on the
power market, along with diverse end- market exposure and strong penetration into the
growing Asian region provide the company
with an excellent opportunity to provide customers the right solution for their design
challenges.
www.fairchildsemi.com
IEEE International Electric Vehicle Conference Program Brings
Together World Experts To Advance Electric Vehicle Technology
Advancing the adoption of electric vehicles and the power grid infrastructure
needed to create more energy-efficient
transportation systems will require
developing and integrating diverse
technologies, as well as adopting policies and standards needed to fully deploy these systems. To serve
as a catalyst, the world’s leading technical professional association –
IEEE – has organized the first technology conference solely dedicated to advancing these efforts in an interdisciplinary manner.
Scheduled for March 4-8, 2012 at the TD Convention Center in
Greenville, SC, the inaugural IEEE International Electric Vehicle Conference (IEVC) will provide a unique interdisciplinary forum for engineers, researchers, government officials and professionals from fields
as diverse as electric utilities, semiconductors, battery technology,
automotive engineering, computers and urban planning to come
6
Bodo´s Power Systems®
together to discuss, debate and demonstrate noteworthy developments critical to making progress in this emerging area.
The 2012 IEVC will facilitate the exchange of information on global
trends in technology, engineering, standards and deployment among
industrial, academic and regulatory thought-leaders for the rapidly
emerging worldwide electric vehicle ecosystem.
The conference technical program consists of presentations and
poster sessions from leading experts in electric vehicle design and
manufacturing, utility and infrastructure development, and component
manufacturing. The complete conference program is available at:
http://electricvehicle.ieee.org/program.html
March 2012
www.ieee.org
www.bodospower.com
NEWS
5th Developer Forum Battery Technologies
Karlstein (Germany), The 5th Entwicklerforum Akkutechnologien (Developer Forum
Battery Technologies), hosted by the batteryuniversity.eu, takes place on April 18 and
19, 2012 in the "Stadthalle Aschaffenburg",
Germany. Attendees are offered an extensive two-day congress program with nearly
30 presentations (mainly in German), two
half-day fundamentals training courses on
the subjects of battery technologies and battery management systems, and an exhibition with interesting products and technologies dealing with all aspects of battery cells and
rechargeable batteries.
The focus of this successful series of forums – in 2011, more than
550 attendees (interested users, developers and experts) participated
in the Developer Forum and the accompanying workshops – is once
again this year on the latest technologies, products and market
trends presented by leading manufacturers of cells and charger ICs
and internationally renowned institutions such as A123, Akku Power
GmbH, Alfred Thun GmbH & Co. KG, Atmel Automotive GmbH, Batterien-Montage-Zentrum GmbH (BMZ), Deutsche Gesellschaft für
Sonnenenergie e.V., Euro-Batterietechnik GmbH (EBT), European
Recycling Platform (ERP) Deutschland GmbH, Fahrzeugakademie
HWK, Fraunhofer Institut für Integrierte Schaltungen (IIS), Fraunhofer
Institut für Silikatforschung (ISC), FSM Elektronik GmbH, Fachhochschule Aschaffenburg, Gleichmann Electronics, Helmholtz Institut Ulm (HIU), Karlsruher Institut für Technologie (KIT), Intertek
Deutschland GmbH, Jauch Quartz Batteries, LG Chem Europe
GmbH, Mack Electronic Systems, Maxell Europe Ltd., Maxim Integrated Products, MEC-Energietechnik GmbH, Omnitron Griese
GmbH, Panasonic Electronic Devices, Panasonic Industrial Europe
GmbH, RRC power solutions GmbH, Saft Batterien GmbH, SchulzElectronic Sony Europe Ltd., Texas Instruments, TEXSYS GmbH,
TPW Prüfzentrum GmbH, VDE Prüf- und Zertifizierungsinstitut
GmbH, velotech.de and werkstoffpruefung.de.
The many different topics range from the most
modern physical methods for battery analytics,
the design and development of intelligent rechargeable battery systems, system questions regarding storage in renewable energy networks, flexible battery management systems for electric drives to the
challenges regarding the safe implementation of safety tests of Li-ion
batteries for electric vehicles.
Dr. Jochen Mähliß, Manager of the batteryuniversity.eu: “Our explicit
goal is to offer the broadest spectrum of information possible to battery developers and users. In just two days, we want to give attendees the opportunity to gather comprehensive information about the
latest developments in battery technologies from experts in many different fields. I believe that with our selection of topics we will once
again fully meet the expectations in 2012. It is not surprising that
within only four years the Developer Forum Battery Technologies has
established itself as the most important meeting place for the mobile
electricity supply industry in Europe.”
Furthermore, the conference is accompanied by an exhibition,, which
is open both days from 8:00 AM to 6:30 PM, where attendees have
the unique opportunity to get detailed information and advice from
the experts of Sony Europe, Panasonic, LG Chem Europe, Saft Batterien and others about their latest products and technologies.
The attendance fee for the 5th Entwicklerforum Akkutechnologien
including breakfast, lunch and coffee buffets, after-show snacks and
all forum documentation is 650 EUR plus 19% MwSt. (German Value
Added Tax) per person. The fee for a one-day attendance is 350
EUR plus 19% MwSt. per person.
The detailed program of events and registration form can be downloaded from the homepage www.batteryuniversity.eu or requested by
sending an email with the subject line "Entwicklerforum Akkutechnologien" to forum@batteryuniversity.eu.
batteryuniversity.eu
Industry’s First Application-focused
Gallium Nitride (GaN) Transistors Textbook
Power Conversion Corporation (www.epcco.com) announces the publication of a textbook designed to provide power system
design engineers basic technical and application-focused information on how to design
more efficient power conversion systems
using gallium nitride-based transistors.
This practical guide provides guidance on the use of GaN transistors
in widely used power electronics applications, ranging from buck converters to Power over Ethernet. Also included are discussions on
fundamental power engineering subjects such as; performance characteristics of GaN transistors, layout considerations for GaN circuits,
paralleling GaN transistors and driver IC requirements for GaN transistors. The final chapters address GaN device reliability, their exceptional radiation-resistant characteristics as well as their future in
power electronics.
8
Bodo´s Power Systems®
According to Alex Lidow, Efficient Power Conversion CEO and coauthor of this book, “Gallium nitride transistors provide a long-awaited
displacement technology for MOSFETs, and much has been learned
over the past several years about how to apply this new technology.
In addition to increasing the efficiency of today’s power conversion
systems, GaN transistors open up new applications such as RF
envelope tracking and wireless power transmission that are much
needed to keep pace with the ever-expanding communications industry and battery operated products. These new applications are
enabled by the high frequency switching capability combined with the
high voltage and high power capabilities of gallium nitride FETs.”
“GaN Transistors for Efficient Power Conversion” is available for
$39.95 and can be purchased from the EPC website (www.epcco.com), Digi-Key (www.digikey.com) or Amazon (www.amazon.com).
March 2012
www.epc-co.com
www.bodospower.com
BLUE PRODUCT OF THE MONTH
Silicon Carbide Power Devices
in Chip Form to Enable More
Efficient Power Electronic Modules
Availability of Fully Qualified Silicon Carbide MOSFET Chips Can
Create New Opportunities for Energy Efficiency in Solar, Telecom,
Industrial Power Applications.
Cree, Inc., a market leader in silicon carbide (SiC) power devices,
continues to advance the revolution in high-efficiency power electronics with the release of the industry’s first fully qualified SiC MOSFET
power devices in “bare die” or chip form for use in power electronics
modules. Cree’s SiC Z-FET™ MOSFETs and Z-Ree™ diodes are
used in advanced power electronics circuits to achieve significantly
higher levels of energy efficiency than is possible with conventional
silicon devices.
“Power module manufacturers can combine Cree’s 1200V SiC power
MOSFET and Schottky diodes in chip form to create an ‘all-silicon
carbide’ module design for ultra-high-efficiency power electronics systems,” continued Balkas. “These new modules provide the proven
benefits of silicon carbide—zero reverse recovery losses, temperature-independent switching, higher frequency operation with low electromagnetic interference (EMI), and significantly higher avalanche
capability – and deliver switching frequencies that are five to eight
times higher compared to conventional silicon solutions. The higher
switching frequencies enable smaller magnetic and capacitive elements, thereby shrinking overall system size, weight and cost.”
The new Cree power MOSFET devices are initially available in two
versions: the CPMF-1200-S080B measures 4.08mm x 4.08mm and
is rated at 1200V/20A with a nominal on-resistance (RDS(on)) of
80mΩ; and the CPMF-1200-S160B measures 3.1mm x 3.1mm and is
rated at 1200V/10A with a nominal on-resistance (RDS(on)) of 160mΩ.
Operating junction temperature for both devices is rated at -55°C to
+150°C.
Power modules typically combine a number of discrete power switching devices – MOSFETs and diodes – in a single integrated package
for high-voltage power electronics applications such as three-phase
industrial power supplies, telecom power systems and power inverters for solar and wind energy systems. In traditional MOSFET packaging technologies, the parasitic inductance of the long leads can
limit the switching capability of SiC MOSFETs. By offering Cree customers bare die alternatives, circuit designers can now take full
advantage of the switching performance of SiC technology by reducing the effects of the package-parasitic inductance.
“With the availability of fully qualified SiC MOSFETs as unpackaged
chips, manufacturers of power modules can realize the performance
advantages of SiC devices—better high temperature operation, higher switching frequencies and lower switching losses – without the limitations imposed by conventional plastic packaging of discrete
devices,” explained Cengiz Balkas, Cree vice president and general
manager, power and RF. “The design advantages of implementing
SiC power devices in power electronic modules include the ability to
achieve higher current and voltage ratings with fewer components,
which in turn can enable maximum power density and increased reliability.”
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Bodo´s Power Systems®
The two versions of the 1200V MOSFET die are fully qualified and
released for production use and available to Cree’s customers, as
well as through Cree’s Power die distributor Semi Dice. Cree has
published specifications and detailed design guidelines, including recommendations on die attach and bonding, to assist power module
manufacturers in the use of the new devices and optimizing their
designs. In addition, Cree is pleased to offer customers the availability of a SiC MOSFET Spice Model created to help with early simulation and evaluation. The Cree model can be downloaded at:
www.cree.com/power/mosfet_model_req.asp
For samples and more information about Cree’s SiC power devices,
please visit: www.cree.com/power
Cree has been a recognized leader in SiC MOSFET process and
design development for more than 20 years and has been awarded
more than 50 patents related to SiC MOSFET technologies, with
numerous patents pending.
About Cree
Cree is a market-leading innovator of semiconductor products for
power and radiofrequency (RF) applications, lighting-class LEDs, and
LED lighting solutions.
Cree's product families include LED fixtures and bulbs, blue and
green LED chips, high-brightness LEDs, lighting-class power LEDs,
power-switching devices and RF devices. Cree products are driving
improvements in applications such as general illumination, electronic
signs and signals, power supplies and solar inverters.
March 2012
www.cree.com
www.bodospower.com
GREEN PRODUCT OF THE MONTH
Current Sensor Controls
High-Speed Electric Motor
Isabellenhütte provides Formula 1 teams with controlled means of
acceleration. Nine top teams are using the IVT-F current sensor
made by Isabellenhütte Heusler GmbH & Co. KG, Hesse, Germany,
during the 2012 Formula 1 season, which will start on March 18th in
Melbourne, Australia. The module has been integrated in the socalled E-KER systems: E-KERS is an Electric Kinetic Energy Recovery System that was used for the first time in 2009 and which was
integrated in Formula 1 cars again for the 2011 season.
just two months to develop the modules and they are specifically
designed for use in Formula 1. Isabellenhütte’s measurement segment aims to cement its position as technological leader in the field
of shunt-based current measurement with these products.
Jens Hartmann, Sales Director Measurement at Isabellenhütte
Heusler GmbH & Co. KG comments: “We are already working on
sensors for the 2013 and 2014 Formula 1 seasons.”
IVT-F technical data
• Three-channel measuring system for current, voltage and temperature (I,U,T)
• Internal sample rate: 3.5 KHz
• Fixed calculation of mean value
over 16 sampling values
• U/I with input filter cut-off frequency of fg=350Hz
• 500 Hz measured value output
• CAN-Bus with 1 MBit data rate
• Operating life: minimum
2,000 km
E-KERS forms part of the power transmission of F1 cars. It converts
kinetic energy won during the breaking process into electricity with
the help of an electric motor that also performs as a generator. This
power is stored in lithium-ion batteries and fed back into an electric
motor in strictly regulated quantities, which in turn boosts the Formula
1 car’s combustion engine during acceleration periods. Isabellenhütte’s IVT-F integrated current sensor controls the quantity of power
supplied by the E-KERS. The Formula 1 umbrella organisation FIA
(Fédération Internationale de l’Automobile) aims to ensure in this way
that the racing teams will not use E-KERS to break the rules. It took
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Bodo´s Power Systems®
Isabellenhütte Heusler GmbH &
Co. KG is a leader in the field of
shunt-based current measurement
technology. The company has
combined its precision measuring
systems under the new brand
name ISAscale®. The company
has been owned by the Heusler
family since 1827. Around 650
staff are employed at its headquarters and production site in Dillenburg, Hesse.
March 2012
www.isabellenhuette.de
www.bodospower.com
EconoPACK™ 4
The world standard for 3-level applications
The EconoPACK™ 4 is an optimized module for 3-level applications like
I Uninterruptible Power Supply
I Solar Inverter
I High Speed Drives
where a robust design, high efficiency and less harmonics are needed.
For these applications starting with 50 kW up to 125 kW, the EconoPACK™ 4 can be used to
build up one phase. For higher power ratings modules can be switched in parallel.
All modules are equipped with the state-of-the-art IGBT4.
Further information are available on request.
The degree of efficiency for the two 3-level topologies, NPC1 and NPC2, has to be
evaluated depending on the switching frequency.
I EconoPACK™ 4 NPC2 topology for low and medium switching frequencies
(approx. fsw< 12 kHz)
I EconoPACK™ 4 NPC1 topology for high switching frequencies (approx. fsw≥12 kHz)
NPC1 topology
I 650V IGBT4
I Optimized for fsw≥12 kHz
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NPC2 topology
I
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650V/650V IGBT4
650V/1200V IGBT4
Optimized for fsw<12 kHz
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GUEST EDITORIAL
The Augurs Promise
Inspiration for Spring
By Petra Haarburger, President, Mesago Messe Frankfurt
In ancient Rome there were officials, who
told the future by examining bird flight. During the reign of Gaius Julius Caesar, without
doubt one of the most fascinating characters
of the ancient world, there were 16 of these
soothsayers, or augurs, in the pay of Rome.
Just imagine that the decisions taken today
by the world’s powers would depend on
these authorities. Agreeing the Eurozone
bailout fund? Let’s see what the crows would
say to that. Using economic sanctions
against one or more countries? What is the
view of the geese? It is possible that every
now and then decisions are made that are
not purely based on rational consideration.
After all those in charge are only human, but
in fact magic has, after all, crept into the far
corners of our world.
But what has it brought us? The augurs of
today are called “teams of experts”, “subsistence strategies”, “rating agencies” and
“political advisers”. Their entire expensive
know-how has not fundamentally transformed their ability to predict the future. Who
in 2008 would have guessed that the insolvency of an investment bank just one year
later would bring the economic world to its
knees? Who would have believed that the
economy would recover so quickly in 2009?
Who, in 2010, really took seriously the difficulties emerging for some of the Euro
states? Who would have believed until well
into 2011, the year of hope,that the power of
a global financial tsunami was just waiting to
be unleashed? Difficile est saturam non
scribere (it’s hard not to write a satire about
it, Juvenal, 2nd century AD).
What can we learn from this? One thing is
for sure: we must take into account insecurity concerning external conditions in our planning for the future. Best and worst case scenarios will influence decision-making more
than in the past. Best and worst case scenarios usually result from the influence of
external factors on what we do. We are at
their mercy – to a greater or lesser extent.
The world around us is unpredictable, which
is exactly why we should optimize our performance constantly. If we are doing our
best, we will benefit from a tailwind and we’ll
be able to more robustly withstand a head
14
Bodo´s Power Systems®
wind. This is true for individuals as well as
groups; for companies as well as whole
countries.
These days, knowledge forms the basis of
our achievements. Knowledge is the most
valuable resource of the 21st century. Never
before in the history of man has knowledge
been so available. But neither has it also
dated so quickly and this is particularly true
in the engineering sciences. If an engineer
wants to continue to work with some credibility, he can only do that if he keeps his knowledge up to date. And that’s a real challenge.
It’s also important that his knowledge should
not remain theoretical as it becomes only
really meaningful when it’s put into practice.
This is true for the development engineer as
well as the beneficiaries of his labours.
There is a direct connection between the
availability of knowledge and the pace of
progress. The more people that can achieve
the current knowledge base, the greater this
is likely to grow. In the past two decades the
internet has accelerated this process considerably. Whereas in pre-internet times someone thirsty for knowledge had to laboriously
find his way to the source, these days the
information flows directly his way pretty
much wherever he is in the world.
So not only has the internet increased
access to knowledge it has also influenced
how it develops. A great variety of disciplines
have developed internet platforms where
experts can exchange ideas resulting in the
emergence of virtual communities - highly
effective knowledge generators.
Is it a perfect world? It certainly offers many
advantages: for example it doesn’t release
CO² emissions; it’s relatively low priced and
it saves time. If that was all it was, it would
March 2012
remain, by and large, virtual and would have
little impact in real life. Humans are social
beings with highly intelligent senses. The
success of homo sapiens as a species lies
in its ability to link intellectual stimulation with
the senses, and vice versa. But being able
to stimulate the senses is not exactly the
strongest point of the internet; whilst it delivers an excessive amount of data, it cannot
deliver the inspiration to match. “Where do I
find that?” asks the modern person optimally
equipped with the tablet PC and smartphone. Amazingly, often in the form of
human communication which has existed in
basic form for thousands of years: at exhibitions and conferences, where people with
similar interests gather in one place for a
limited time. It is here that a quite special
spirit can be found which only emerges
when people meet face to face in the real
world.
So are exhibitions and conferences competing with the internet? As President of a company specialized in organising technology
exhibitions and conferences I can say that
for a long time the internet was the bête noir
of our branch. With the competence of the
Roman augurs, many futurologists predicted
our demise. Only virtual exhibitions, at best,
would, survive. Today it is our experience
that the internet increasingly complements
who we are; it can even hone the profile of
our exhibitions and conferences. These days
the visitors come to our events already highly informed and take from conference speakers and trade specialists on the stands
knowledge which can only be gained
through speaking with one another. Ideas
often arise during these conversations, and
solutions are found which no-one had previously considered. That is the spirit which is
only to be found at an exhibition or conference.
I’d like to close by slipping into the role of
augur myself. Should you visit SMT Hybrid
Packaging 2012 or PCIM Europe 2012 in
May, you will find exactly that spirit in
Nuremberg. I am absolutely convinced of the
truth of my prognosis.
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MARKET
ELECTRONICS INDUSTRY DIGEST
By Aubrey Dunford, Europartners
GENERAL
Top 10 0riginal Equipment Manufacturers
accounted for $ 105.6 billion of semiconductors on a design total available market basis
in 2011 — 35 percent of semiconductor vendors’ worldwide chip revenue, so Gartner.
This represented a year-over-year increase
of 1.8 percent from 2010.
SEMICONDUCTORS
Global sales of semiconductor grew for the
second consecutive year following the 2009
downturn, reaching a record of $ 299.5 billion in 2011, so the WSTS. This represents
an increase of 0.4 percent compared to
2010. In 2011, total discrete, opto & sensors
grew by 8.3 percent and MOS microprocessors grew by 7.5 percent compared to 2010.
STMicroelectronics net revenues for the full
year 2011 decreased 5.9 percent to $ 9.73
billion from $ 10.35 billion in the prior year
reflecting weak market conditions, particularly in the second half of the year.
MagnaChip Semiconductor, a Korea-based
manufacturer of analog and mixed-signal
semiconductor products for high volume
consumer applications, will acquire Dawin
Electronics, a Korean company that designs
and manufactures IGBTs, Fast Recovery
Diode (FRD) and MOSFET modules. Terms
of the deal were not disclosed. The total
IGBT market in 2011 was estimated to be
$4.1 billion and is expected to grow at a
CAGR of 10 percent from 2011 to 2015, so
IHS iSuppli.
Maxim Integrated Products has acquired
Genasic Design Systems (Riseley, England),
a fabless IC company founded in 2009 with
16
Bodo´s Power Systems®
a specific focus on designing RFIC’s for
mobile communications systems, for an
undisclosed amount. For fiscal 2011, Maxim,
which makes analog and mixed-signal semiconductors, reported revenue of approximately $ 2.5 billion.
$ 2.3 billion. Its main business is the manufacture of low-voltage and ultralow-voltage
electrical products such as connectors, conduits and fittings as well as wiring management products for the construction, industrial
and utilities markets.
Soitec, a French supplier of semiconductor
materials for the electronics and energy
industries, and Sumitomo Electric Industries,
a Japanese provider of compound semiconductor materials, have reached a major milestone in their strategic joint development
program started in December 2010 by
demonstrating four- and six-inch engineered
GaN substrates and launching pilot production lines to enable wider market adoption.
These substrates -produced by transferring
ultra-thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates -are suited for manufacturing advanced high-brightness lightemitting diodes (LEDs) for the lighting market and power-efficient controllers for the
electric vehicles and energy markets.
Teseq, a Swiss developer and provider of
instrumentation and systems for EMC emission and immunity testing, has acquired UKbased Milmega, a specialist of solid state,
high-power microwave and RF amplifiers.
The acquisition strengthens Teseq capabilities in commercial, industrial, automotive,
military and communications applications,
further positioning the company as a global
leader in immunity testing. Established in
1987, Milmega designs and manufactures
high power amplifiers for commercial and
government applications.
OPTOELECTRONICS
Corning and Samsung Mobile Display have
signed an agreement to establish a new
equity venture for the manufacture of specialty glass substrates for the rapidly
expanding organic light emitting diode
(OLED) device market. The new business
will be located in Korea and will supply
OLED backplane glass substrates for Samsung Mobile Display, as well as for the
broader Korean market.
PASSIVE COMPONENTS
TE Connectivity announced a second-source
agreement under which Molex will have the
rights to manufacture, market and sell TE’s
latest Strada Whisper high-speed backplane
connector family.
OTHER COMPONENTS
ABB, the Swiss power and automation technology group, will acquire Thomas & Betts, a
North American supplier in low voltage products, for approximately $ 3.9 billion. The
combined product portfolio and enhanced
distribution network will enable ABB to double its addressable market in North America
to approximately $ 24 billion. Thomas &
Betts employs approximately 9,400 people
and is estimated to report 2011 revenues of
March 2012
DISTRIBUTION
Arrow Electronics reported fourth-quarter
2011 net income of $ 174.1 M on sales of $
5.44 billion, compared with net income of $
157.9 M on sales of $ 5.24 billion in the
fourth quarter of 2010. Global components
fourthquarter sales of $ 3.44 billion
increased 3 percent year over year. Global
enterprise computing solutions fourth-quarter
sales of $ 2.0 billion increased 5 percent
year over year. Arrow’s net income for 2011
was $ 598.8 M on sales of $ 21.39 billion,
compared with net income of $ 479.6 M on
sales of $18.74 billion in 2010. Arrow Electronics also announced that Brian McNally
has been named president of specialty businesses within the company’s Global Components segment. Mr. McNally will focus on
expanding the offerings and accelerating
growth for this newly formed business group,
including A.E. Petsche, Richardson RFPD
and Nu Horizons Electronics. Mr. McNally
served as president of Arrow’s Europe, Middle East and Africa Components business
from 2008 to 2011.
This is the comprehensive power related
extract from the « Electronics Industry Digest
», the successor of The Lennox Report. For
a full subscription of the report contact:
eid@europartners.eu.com
or by fax 44/1494 563503.
www.europartners.eu.com
www.bodospower.com
MARKET
DC Building Power
Gains Momentum
By Linnea Brush, Senior Research Analyst, Darnell
Dc building power is poised to challenge a very fundamental paradigm of traditional building power architectures – namely, ac powering. Ac building power has been the mainstay of almost all commercial, industrial and residential facilities for decades. Even telecommunications gear – most of which is dc-powered – has incorporated acpowered data communications equipment into their facilities. Migrating these buildings into dc-powered facilities will alter how new and
existing buildings are designed and operated. They will not replace
ac-powered buildings, and in some cases, they could end up as
“hybrid” facilities. In any of these scenarios, however, new opportunities will open up for original equipment manufacturers and power
component makers.
Some of these opportunities differ from the traditional markets that
companies have pursued in the past. For example, sales of connectors, lighting fixtures, power distribution units (PDUs), and energy
storage devices will be needed for data centers, telecommunications
central offices, commercial and industrial facilities, and residential
buildings. Since the “first wave” of these installations is currently taking place, the evolution from ac to dc building power will likely highlight the areas where standards, safety considerations and delivery
systems will require new equipment designs.
Despite the challenges, the addition of dc power systems offers the
potential for improvements in energy efficiency, reliability, power quality and cost of operation, compared to traditional ac power systems.
Dc power distribution could also help overcome constraints in the
development of new transmission capacity that is beginning to impact
these industries.
As an emerging technology, it is important to identify the most promising types of facilities that could benefit from an original dc power
building design (or a conversion to such a design). Two areas of
immediate opportunity for the adoption of dc power are data centers
and commercial/industrial facilities. These types of buildings have the
advantages of strong standards activity, supporting government regulations, and a number of demonstration facilities. In addition, a small
but growing number of products have been developed by companies
like Delta Electronics, Emerson Network Power, and Nextek Power
Systems.
The market drivers for the telecom industry are different. Telecom
central offices are already dc facilities, but the technological, regulatory and economic factors needed for them to adopt a higher voltage
dc architecture are not as clear-cut. Telcom is a very entrenched
industry that tends to resist change. “Ac loads” are part of their existing dc architecture, but data communications equipment has altered
the “balance of power” to more of these loads in central offices.
To address this issue, the European Telecommunications Standards
Institute (ETSI) developed a standard that was based on a similar
effort from the Environmental Research Institute (EPRI) and the
18
Bodo´s Power Systems®
EMerge Alliance. The EN 300-132-3 standard calls for equipment to
be powered by either high-voltage ac, single- or three-phase rectified
ac, or dc current. The adoption of this standard is expected to
address the problem of compatibility between the power supply
equipment and both datacom/telecom equipment, and to the different
load units connected to the same interface.
The residential dc industry is in a much earlier stage of development
than the other building types. One of the major forces that could drive
adoption of dc power in residences is the expansion of zero net energy (ZNE) facilities. These are buildings that only consume as much
energy as they produce, through on-site and renewable energy systems. A ZNE building could significantly cut dependence on fossilbased energy and supply the required energy through on-site distributed generation, such as solar, wind, fuel cells, or microturbines.
The trend towards ZNE housing is just one of the forces that could
drive the residential market. At the lower power levels, the EMerge
Alliance has concentrated on the development of a 24Vdc standard
for commercial, industrial and residential buildings. The EMerge
Alliance Standard 1.0 regarding 24Vdc power creates an integrated,
open platform for power, interior infrastructures, controls and a wide
variety of peripheral devices to facilitate the hybrid use of ac and dc
power within buildings.
Dc microgrids are gaining traction as other emerging technologies
become more established, as well. A number of companies, including
Nextek Power Systems, are already offering products to support dc
microgrids. A system that allows the delivery of dc power to a microgrid can provide reliability and power quality to the facility. In addition,
as renewable energy technologies such as solar PV become more
widespread, the development and use of a dc microgrid could evolve
into a cheaper and more efficient alternative. A possible course of
action is to install a dc network linking dc devices to dc power supplies.
The development of power products that work in a dc power environment is critical to the further expansion of dc powering in buildings.
Although power supplies and components for data centers are currently designed specifically for demonstration facilities and not widely
available as standard products, a number of prominent companies
are starting to see the potential of introducing dc power to data center facilities. Delta Electronics recently launched a state-of-the-art
data center dc power solution that includes a complete product portfolio of dc UPS systems, PDUs, and server power supplies for more
energy-efficient data center applications.
Additional factors contributing to the advancement of dc power
include the large consumer electronics market, which operates exclusively on dc power and currently requires conversion from ac
sources. These devices are common in every household and include
televisions, set-top boxes and many others. In aggregate, the millions
March 2012
www.bodospower.com
MARKET
of conversions performed for the operation of these electronic
devices extract a huge loss in energy during conversion and therefore represent a long-term opportunity.
The adoption of dc building power is global, with developments
occurring in Europe, North America and Asia. For instance, a recent
dc power standard in China mandates that all telecommunications
facilities and data centers adopt 240Vdc power. The retrofits will not
involve any change in the existing 230Vac power supplies – the supply voltage will simply be switched to 240Vdc, saving a few percentage points of energy consumption. This is a near-term “bandage” to
gain small but immediate efficiency improvements, but it is expected
that in the longer-term, China will also adopt the 380/400Vdc standards being developed in other parts of the globe.
The market for products used in dc building installations is currently
small, consisting primarily of custom-designed deployments. Future
opportunities are expected to be extensive, however. Many companies are capable of manufacturing these products as the markets
evolve, even if they do not do so now. For example, dc-dc converters
are not yet available for direct-dc building applications; but many of
www.bodospower.com
the high-power dc-dc converters currently designed for harsh environments (which are available for marine, industrial and military applications that involve stresses, vibrations and humidity) have similar
characteristics needed for direct-dc power facilities.
Although dc building power is still emerging, it is already providing
opportunities for power supplies in a number of industries and applications. Darnell’s report on “DC Building Power: Emerging Trends,
Application Drivers, Market Opportunities, Adoption Rates and Forecasts” includes over 30 figures depicting a variety of power system
schematics and comparisons, architectural standards, efficiency standards and other developments driving the market. The focus of this
comprehensive analysis provides decision makers with an insightful
look into the current and future opportunities and threats available in
the dc building power supply market.
DC Building Power: Emerging Trends, Application Drivers, Market
Opportunities, Adoption Rates and Forecasts
March 2012
www.darnell.com/dcbp/
Bodo´s Power Systems®
19
COVER STORY
Searching for the Golden Fleece
By Werner Bresch. GvA
In the middle of January, I received a „call for help“ from Bodo Arlt,
who said that the author of the cover story for the March 2012 issue
had deserted him. He asked me whether I might be able to help out.
I would love to have written a fulsome and detailed technical article,
for example writing about the developments for medium-voltage
applications with bipolar and with BiMos semiconductors on which we
are currently working. But to do this you need more time than the
deadline for submitting the script allowed. So a discussion took place
in which we jointly concluded that in our power electronics sector
there is a lack of up-and-coming talent and this may have a very negative impact on technical expertise, economic growth and also social
peace and harmony in our world. We also considered why it is not
proving possible to inspire more talented young people to pursue a
career in power electronics. One of the reasons may be that we
„oldies“ do not communicate in sufficiently vivid terms what makes
power electronics so fascinating!
bound to be a big bang. Yes, this can happen, we then reply, but first
comes the flash and then the bang and finally parts start flying
around. This is what is known as a learning curve!
This is usually the point at which most applicants raise the white flag
and give up. They say that all this involves too little electronics and
too much mechanics and after all a high-tech job at a computer
involving software development, for example, is much more interesting. By contrast, our field of work represents an archaic sledgehammer approach to doing things and is not very sexy.
And at first glance this statement does actually appear to have some
truth to it. However, if you take a second look, unimagined opportunities are opening up with extraordinarily diverse career prospects in
this field of power electronics.
Set theory
I now find myself in the „late autumn“ of my extremely interesting and
varied working life. When I look back, I can only emphasise that I
have never got bored in my domain. The work and assignments I
have tackled have contributed a lot to my professional and personal
development and given me a great deal of satisfaction. Over the
years, I have developed my own „personal set theory“ on this.
In my view, to ensure that you can develop as a person in your work
and deliver good results, you need the largest possible „cross section“ which is made up of three „subsets“.
I define subset 1 as being satisfaction with the assignment resulting
from the challenge presented by the assignment you are given. In
this regard, a role in the field of power electronics is hard to beat in
terms of variety and diversity.
The first step is always the hardest!
Every month Bodo publishes its Power Systems and this means that
every month „The Gallery“ appears on the first pages. I have now
also been added there and a picture appears alongside my name. I
must concede that I fit in well here, in the line-up of gentlemen with
greying temples and sometimes slightly thinning hair. By contrast,
you find far too few women and also far too few young men. This
sheds a significant light on the next generation of talent in our industry.
When we interview graduates fresh out of universities of applied sciences and technical universities as potential applicants to join our
development department, the interviews usually progress very well
up to the point at which we start talking about our job profile. While
we enthusiastically explain to applicants that we deliver customerspecific power electronics developments up to the high MW range
and also work with kiloamperes and kilovolts, the applicants’ eyes
light up and they look at us in amazement, incredulously and quizzically. The whole electronic equipment really is on a large scale with
thick copper rails and this would certainly not fit on the laboratory
bench, they then often ask. The whole thing really does make a racket and also makes other noises and, in the event of a fault, there is
20
Bodo´s Power Systems®
I define subset 2 as satisfaction with the working environment. Here
too power electronics offers exceptional opportunities for professional
and personal development.
Last but not least comes subset 3. This relates to aspects such as
payment, career opportunities and future prospects working in the
field of power electronics. Here too it should be stated that the
prospects for the aspects mentioned above are better than excellent.
Even if individual subsets diverge from the cross-sectional optimum,
in my case at least (and this is also true of many others I have met) I
have never turned my back on power electronics. On the contrary.
This field of study is so interesting, varied, diverse and exciting that it
is almost as addictive as a drug. Once you have experienced one
dose of it, you can never get away from it. I therefore declare myself
guilty as charged! Yes, I am addicted! Addicted to power, addicted to
power electronics!
Subset 1, playground for technology geeks
Some details about the terms of reference, challenge and diversity of
the job were discussed earlier on. But what actually lies behind this
can at best only be touched upon.
January
March 2012
2012
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COVER STORY
First of all, it should be clearly recognised that power electronics is
not just confined to drive technology. Although drive technology itself
is certainly very multifaceted. For example, there are DC drives with
thyristor bridges, AC drives, in two-pulse inverters, three-pulse inverters, multilevel inverter circuit topologies. Power ranges of from 10s of
watts up to hundreds of megawatts are achieved with these components. For example, we find power electronics as pulse-power
switches in research facilities in kicker pulsers, in process facilities
for metal processing and metal shaping in the multi-digit kV and kA
range. We find power electronics as high-current rectifiers in electroplating facilities and welding facilities as well as high-voltage rectifiers
in the range of several 100kV, e.g. in research facilities.
Power electronics are used for power generation and distribution.
Wind turbines, photovoltaics, and h.v.d.c. transmission are mentioned
here by way of example. Power electronics are used to improve the
grid conditions in the form of thyristor power circuit-breakers for
group compensation or also inverters in 2-pulse and 3-pulse configurations for active filters.
Power electronics can be found in facilities for inductive welding,
melting and hardening. Traction feed rectifiers, auxiliary generator
sets, network interconnections, ripple control transmitters, UPS facili-
cific operating behaviour, and lifetime considerations and ambient
conditions are also incorporated into this process. The interfaces for
the control electronics, the main electrical connections, connections
for liquid cooling for example and mechanical interfaces must be
defined as clearly as possible.
In addition, requirements from sets of rules such as the DIN IEC
must be considered. This is all taken into account in a specification
which reflects the requirements placed on the power electronics and
describes them as completely and comprehensively as possible.
We can now start with the development. The interesting thing about
this is that we are confronted with lots of interdisciplinary problems
which need to be solved in order to develop reliable power electronics.
The suitable power semiconductor is quickly picked out and specified, as is the necessary cooling. This requires a precise thermal and
thermodynamic consideration of the heat loss resulting from the load
conditions defined in the specification. System simulation software
which is suitable for power electronics can be very helpful here provided that the simulation parameters which are entered correctly
reflect the conditions prevailing in the application. It proceeds slightly
more laboriously of course also „manually“ with the aid of everything
you have learned in your studies. Ohm, Kirchhof, Fourier etc. come
into play.
In the case of air-cooled power electronics, we are automatically confronted by flow-dynamic problems, but in the case of liquid cooling
we also face electrochemical problems in the form of material compatibility in the water cycle and water treatment.
The power electronics must be able to mechanically withstand all of
the current loads which occur, including short-circuit current loads. It
must be possible to absorb the mechanical forces which occur here
without any damage being caused. It is certain that mechanical size
data will be defined in the specification and this must not be exceeded. Overcurrent protection devices, if necessary, may well require a
large amount of space.
ties, chargers etc., etc. Power electronics can be found everywhere.
At this point, we should not forget to mention the huge new up-andcoming market: the electric car with all of its main and ancillary
equipment such as battery chargers.
As can easily be seen, a huge new interesting and varied field of
activity is opening up here.
In order to implement all of these power electronic systems, whole
„arsenals“ of the power semiconductors differing in type and power
data are available from various manufacturers. First and foremost,
these are thyristors and diodes in all technological versions, MOSFETs and IGBTs as rapid turn-off MOS or BiMos power semiconductors as well as IGCTs and in certain limits also GTOs as turn-off bipolar power semiconductors for use at maximum power levels.
We thus now have all the ingredients in the form of applications and
power semiconductors which are a prerequisite for the development
of power electronics, apart from a specification. This transforms the
requirements emerging from the application into a set of demands for
the power electronics which are to be developed.
Naturally a wide range of different performance requirements are
placed on the abovementioned power electronics, owing to their spe-
22
Bodo´s Power Systems®
The same applies to voltage stress. The insulation coordinates in
accordance with DIN IEC must be borne in mind here. Very particularly, this applies to developments in the medium-voltage or high-voltage range in relation to partial discharge resistance and the prevention of corona discharges. Any snubber circuits that may be required
will be designed in accordance with the requirements which are
defined in the specification.
All power electronics cause line-conducted interference which needs
to be kept within the permitted limits by using suitable filters. The
same applies to radiated emissions. Emission values must not
exceed defined limit values. The power electronics themselves and
the associated signal electronics such as driver boards, interfaces
and CPUs must operate reliably even when there is interspersed
stray radiation. Nevertheless, they work in a very dynamic environment with voltage edges of a few kV/us and rates of current increase
of up to a few kA/us. This is achieved through suitable cable routing
and suitable screening measures.
Up until now, we were dealing with the „macroelectronic“ sector. But
power electronics does not just consist of metal and precious metal;
there is also a need for „microelectronics“ in the form of driver boards
for actuating the power components, interface boards as interface
March 2012
www.bodospower.com
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COVER STORY
electronics between driver boards and CPUs, auxiliary voltage supplies, current, voltage and excess temperature sensors, etc. However, for these „miniature electronics“, the same set of requirements as
specified previously applies when they are used in the field of power
electronics.
With a little bit of luck and even more skill, the desired power electronics developed according to specification will then be mounted in
the switchgear rack. The equipment is then „brought to life“ with the
software which is suitable for the demands of the application. Functional trials, hot run tests, catastrophic failure tests and final qualitative tests demonstrate that the new power electronics are ready to be
launched on the market.
municate on the subject that has built up as a result of more than
thirty years of professional experience working in the field. It goes
without saying that a newcomer to the industry cannot be expected to
have this depth of knowledge. They will need to be introduced to the
subject matter gradually step by step. This is also what happened to
me over my professional career and even I still learn new things
every single day. Over the years, very diverse problems are thrown
up, both as far as the applications themselves are concerned and in
relation to the electronic solutions to them, with the widest range of
different characteristics of power semiconductors being used in them.
You come into contact with experts from lots of different fields, learn
The job of the development department would thus have come to a
successful conclusion. And this is precisely the point in time at which
the people involved in this development look back with satisfaction
and state: Although it was hard work and stressful, it was a great
deal of fun!
Subset 2, the satisfaction factor.
As has already been alluded to, power electronics is a complex overall field which touches on lots of different specialist areas and subjects both in relation to the development work itself and the specific
characteristics when the electronics are subsequently put into use. It
is possible that, due to this complexity, my description may serve to
put off rather than motivate people who may have been interested in
a possible career in the power electronics sector. Such people should
be reassured that they have simply experienced all the need to com-
about the technical problems presented there, and you get to work
with people of different natures and from different cultures. Often a
role in our field of power electronics involves trips to faraway countries in order to take a look at problems on the ground and come up
with the right solution. The opportunities for development both professionally and personally are vast.
Over the years, as your wealth of experience grows, you become a
valued technical dialogue partner, establish increasingly close links
within the very tight-knit group of people in our industry, and you
essentially become a „member of the family“, usually for life.
This does of course lead to a high degree of personal satisfaction.
Subset 3, where does the journey lead?
Where does the journey lead? Ultimately, every person must determine this for themselves and it will depend on people’s own personal
inclinations and desires. Our industry has room to accommodate all
personality structures from introvert to extrovert and it is multi-culturally liberal. Our field of activity stretches all around the world. This
means that, with the appropriate training, everybody can find an area
of activity that suits them, whether it be in development or marketing,
or in sales or quality assurance or, or, or!
The future outlook regarding a job in the power electronics sector has
never been as rosy as it is today. Our society has recognised that, for
the sake of our children, we must reduce CO2 emissions when it
comes to generating power. At the same time, we were forced to
acknowledge after Fukushima that the unbridled use of nuclear
power plants is probably not the answer to all of our problems.
On the other hand, it is clear that providing a secure and stable supply of electric power is an absolutely basic requirement for achieving
healthy economic growth in the different economies around the world
and ultimately for safeguarding social peace and harmony within
society and within the international community.
24
Bodo´s Power Systems®
March 2012
www.bodospower.com
How stable is your
switched mode
power supply?
The Government of the Federal Republic of Germany was therefore one of the first countries to
decide that five nuclear power plants should be
taken offline and that increasing focus should be
placed on renewable energies. A decision such
as this does of course have wide-reaching consequences as countless gigawatts of power
which were previously fed centrally into the grid
need to be replaced. Accomplishing this with
large-scale power plants fired by fossil fuels as a
substitute would be counterproductive.
As things stand today in the world of technology,
the only option is to generate increasing
amounts of renewable energy. The result of this
is that we will have a decentralised system of
power production, but unfortunately this will
rarely be where the electric power is actually
required at any given time.
As a consequence, for generating power we will
require many more, if not very many more,
onshore and offshore wind turbines, pumped
storage hydro power stations, hydraulic power
stations, tidal power stations, photovoltaic installations, geothermal power stations or large-scale
solar-thermal installations in the sunbelt around
the earth. Large quantities of power electronics
are required everywhere.
As the power generators mentioned previously
feed power into the grid in a decentralised manner and are usually not located at the places
where the electric power is needed, a power distribution system which is capable of handling
this is required.
To transport and distribute the electric power, we
require h.v.d.c. transmission routes, network
interconnections, mains supply solutions, smart
grids, passive and active filters, etc.
The networking of the power transmission routes
will not just take place at a national level but
also across national borders, certainly within
continents and in the future also globally. This is
because the sun is always shining somewhere
on this earth.
Here too power electronics will be required in
very, very large quantities.
To be able to meet the CO2 emission limits of
the future, to which many countries have already
signed up, it will be absolutely imperative to
replace vehicles which run on petrol and diesel
with electric vehicles.
In the Federal Republic of Germany, the desire
of the government is that within the next 10
years at least 1 million such vehicles should
be on the roads. As well as the drive inverters, electric vehicles also require battery
chargers.
Even if you assume that just five per cent of
all the vehicles on the world’s roads are
going to be replaced, this means that another gigantic market for power electronics will
emerge.
Up until now, we have spoken only about “
new” and “more” power electronics. But that
does not tell the whole story. There are lots
of electrical applications such as mediumvoltage drives which are still unregulated
today. The excess energy is simply burnt off.
Gigantic amounts of power simply blow up
into the sky as heat loss, taking with it the
CO2 which was just produced in order to
generate this excess electric power. With
new high-blocking semiconductors, it is now
possible with an acceptable level of outlay to
develop power electronics which provide the
amount of electric power required for such
motors in accordance with the actual load.
Many other examples of the ways in which
power electronics are used could be listed,
but we will leave it here.
As it is easy to see, an almost infinite number of opportunities are opening up in the
field of power electronics for people who
decide to pursue a career in this sector. The
same is true of the opportunities for personal
and professional development on offer. You
could almost conclude from this that we represent the future for this planet. We are the
„saviours of the earth“. With the work we do,
we are stopping global warming by reducing
and preventing emissions of CO2. We are
making this planet viable for the future lives
of our children and our children’s children.
We are rendering nuclear power plants that
can explode with disastrous consequences
redundant and preventing the homes of hundreds of thousands of people from suffering
radioactive contamination.
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March 2012
Smart Measurement Solutions
C O M M U N I C AT I O N P O W E R
Implementing “Green Power”
in Telecom Architecture
Why Green Power in Telecom? Telecommunication industry consumes about 1% of
electrical energy worldwide that equals to 160B kWh [INTELEC’08]. International
Telecommunication Union (ITU) estimates that Information and Communication
Technology contributes 2.5% into the worldwide greenhouse gas emission.
By Pietro Scalia, EMEA Power Marketing Manager for Telecom
Worldwide trend for energy saving and “Green power” generation
and distribution, have resulted in a wide number of voluntary initiatives and mandatory regulations by international and government
organizations for increased efficiency of electronic equipment including data and telecommunication power systems, which any system of
new generation has to comply with and following the indications.
Power Architecture description
This article describes the implementation of a Telecom Base Station
Radio Unit Power Architecture (fig.1) from -48V to the full set of output loads, providing overall high conversion efficiency (higher than
92%). The complete system, supplying about 1.5kW, comprehends 4
isolated Power Supply Units from the negative 48V Battery Bus. One
of them generates an Intermediate Bus Voltage (whose value is properly chosen to maximize overall conversion efficiency), for distribution
to the main processing DC loads and the antenna (overall about
180W). The other three provide power to the Power Amplifiers (300W
each) working in Slow Drain Modulation, modulating the supply voltage according to a feedback signal from the PA.
All the 4 Isolated PSUs were designed to minimum cost, and with
most homogeneous BOM among the converters.
The SDM performance in the PA PSUs required implementation of an
extra current loop for reverse current protection during the fast drop
of output voltage (slew rate of about 12V/200usec is achieved when
changing the output voltage from 32 to 20V), implementing also limitation of the slope of SDM pilot signal coming from the PA, both
mechanisms to avoid excess of energy to flow back from the output
to the input bulk capacitors. Effective driving stage and Full Bridge
configuration of output Synchronous Rectifies completes the particular bidirectional topology of the SDM PA PSU, implementing Phase
Shifted Full Bridge converter, which guarantees minimum leakage,
low over-voltages and therefore the use of 200V standard Fets on
both primary and secondary side (achieved efficiency is almost 94%).
The IB Voltage was chosen according to the possibility of maximize
the efficiency of the Isolated converter generating that voltage,
increasing the value to maximum extent to best overall efficiency
result. A very cost optimized solution for the IBC, based on output
diode rectification and the same primary stage than the SDM converter, implements premium efficiency also for this stage (higher than
93%).
The PoLs using 30V NexFETs (CSD17xxxQx) and fixed frequency
PWM (TPS4019x) implement still acceptable efficiency at the very
low duty cycle of operation, not penalizing the overall result and
achieving low cost BOM, minimizing number of used part numbers.
26
Bodo´s Power Systems®
The realization of the complete power architecture is based on a
multi designs process. Several PMPs (Reference Designs) have
been realized to build the single blocks constituting the architecture,
from the simple PoLs to the complex isolated converters. The tough
thermal environment characterizing Telecom applications, with 85°C
PCB temperature, has been considered as ground specification for
the high efficiency goal, to design the converters and their parts
(magnetics, passives).
According to the following considerations, which will describe in detail
the key design process and selections, the Isolated converters are
based on the following topologies and the same “green mode” PMW,
UCC28950 for PSFB. Green Mode Highlights are the Adaptive ZVS
Deadtime, Adaptive timing between PRI & SEC Synch-Rectifiers, Disable Synch-Rectification at DCM/CCM boundary, ‘Intelligent’ Burst
Mode.
The IBC PSU (300W output) is based on a PSFM with Primary Side
Control and Diode Rectification. The SDM PA PSU (3X350W output)
is based on PSFB with Secondary Side Control and FB Synchronous
Rectification. AUX SUPPLY (5W output) is based on Multi-output Flyback with TPS40210.
Figure1: Telecom RF System typical Power Architecture
Topology selection
HB has potential drawback for large transient applications because it
is difficult to maintain flux density balance of power transformer and
charge balance of capacitor simultaneously during fast duty cycle
and load current changes. Thus, it is recommended to use peak current mode control to improve the flux balancing, if possible compared
to converter operation. At this power level, FB offers also better
implementation. HB anyway will require 4 switches, due to the need
February
March 2012
2012
www.bodospower.com
C O M M U N I C AT I O N P O W E R
of paralleling 2 switches per leg, so the FB offers better layout possibilities and thermal dissipation of the bridge.
For the IBC with significantly high output voltage, synchronous rectifier will offer only marginal advantages compared to diode rectification
(below 1% efficiency improvement). On the other side, diode solution
will provide lower cost achievement.
For SDM converters, synchronous rectification is mandatory to allow
the reverse power flow generated by the step down in output voltage
(output capacitor discharge).
For the SDM converter (32V output) a FB secondary structure (bidirectional, symmetric, for minimum leakage and over-voltages) offers
benefit of lower rated FETs and consequent lower cost. Phase Shifted technique on the FB primary side, for both the two different converters, is a good strategy to reduce losses on the primary Fets
(ZVS) and make the converter size acceptable
PWM Controller Considerations
For applications, like the SDM PA PSU, with large load current transients and requiring fast wide-range output voltage transitions, the
wide bandwidth of feedback loop is critical.
This dictates location of the controller on secondary side thus eliminating slow response opto-couplers from feedback loop. Peak current
mode control may be preferable to protect and preventing from possible transformer flux unbalancing during large transients, otherwise
voltage mode will require current limitation and series unbalance
capacitor.
To protect the converter during SDM output dynamic transition from
maximum to minimum output voltage, specific protections based on
reverse peak current limitation and control signal (SDM) slew rate
limiting, have to be implemented (alternatively).
The SDM Operation is characterized by an output voltage dynamic
performance (T_rise/T_fall and a T_settling) at a minimum output
load (worst case), and maximum load capacitance. The faster the
power supply output can follow the control signal without stability
issues or deteriorating the over/undershoot specification, the better is
for the application.
Measurements and Results
у12V/500μsec
( SDM Control signal
slew rate limited )
Figure 3: SDM Measurements: control signal slew limited
Compensation circuit needs to be designed to achieve at least 1/10
cross-over frequency relatively to the fs. FB converter has output filter operating frequency doubled versus converter frequency thus providing wider bandwidth of feedback loop versus single ended topologies.
Figure 4: Efficiency Performance of the ”Green” Power System
The IBV PSU (PMP6720) operates at fsw=200kHz with measured
η=92.5% @20A.
Board is 6X15cm, (single side mounting for easy prototyping and
testing).
Figure 2: SDM PA PSU - PMP5726 Board Picture
SDM PA PSU Protections and Performance
During output dynamic transition from maximum to minimum output
voltage, the current will flow from output to input of the FB converter
(output capacitor discharge)
Voltage Mode control becomes therefore best option, to avoid current
signal to act on the converter against the reverse power flow operation. For this reason, capacitor flux unbalance protection has to be
inserted in primary side of input transformer.
The SDM PA PSUs (PMP5726) operate at fsw=200kHz with measured η=93.7% @11A. Board (fig.2) is 10X15cm (single side). The
achieved crossover frequency is 17 KHz, with phase margin of
66degs. The output step load change, for the full load transient, is
measured less than 2%. The SDM dynamic performance is measured as output voltage variation from 32 to 20V over time with a
12V/500μsec (fig.3 SDM Control signal slew rate limited and output
current set at 1A, repetition rate 50Hz), and of 12V/225μsec with
Reverse Current limitation of 5A. The overall system efficiency is
summarized in the Table of fig.4, as calculated starting from the single parts of the power architecture.
For this reason the current sense signal (to be used only for limitation) has properly to be extracted from primary side leg of the main
transformer.
28
Bodo´s Power Systems®
March 2012
www.ti.com
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SKiN Technology
Wire bond-free
Reliable and space-saving
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Free from thermal paste and solder
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Current density of power unit
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For 35% smaller inverters
Standard
Technology
Australia +61 3-85 61 56 00 Brasil +55 11-41 86 95 00 Cesko +420 37 80 51 400 China +852 34 26 33 66 Deutschland +49 911-65 59-0 España +34 9 36 33 58 90 France +33 1-30 86 80 00
India +91 222 76 28 600 Italia +39 06-9 11 42 41 Japan +81 68 95 13 96 Korea +82 32-3 46 28 30 Mexico +52 55-53 00 11 51 Nederland +31 55-5 29 52 95 Österreich +43 1-58 63 65 80
Polska +48 22-6 15 79 84 Russia +7 38 33 55 58 69 Schweiz +41 44-9 14 13 33 Slovensko +421 3 37 97 03 05 Suid-Afrika +27 12-3 45 60 60 Suomi +358 9-7 74 38 80 Sverige +46 8-59 4768 50
Türkiye +90 21 6-688 32 88 United Kingdom +44 19 92-58 46 77 USA +1 603-8 83 81 02
sales.skd@semikron.com
www.semikron.com
LIGHTING
Spectral Tuning for White LED
based Luminaries
A smart LED driver can be adjusted
for brightness degradation over lifetime
If you ask a consumer to characterize the perfect light, you might hear in their
description a light requiring the lowest amount of energy, the light output and color is
adjustable, it will last a very long time, etc. to list but a few of the many desirable
characteristics.
By Brian Johnson, Lighting Specialist, Fairchild
Lowest input energy is the efficient conversion of input power to
lumen output known as efficacy, adjusting light output relates to dimming to soften the light’s brightness, or better yet add in adjustment
of the light fixture color in order to simulate day versus night conditions and can maintain the light output for a long useful lifetime by
tuning the bias current through the LEDs. Incandescent lamps suffer
from low efficacy and low usage life times, Sodium lamps offer little
color options and low usage life times, and fluorescent lamps have
fewer dimming options in retro-fit applications and low usage life
times. High brightness LEDs however, promise good efficacy, excellent life time, color choices with easy dimming control and no UV
rays. These promises are realized and dependent on the smart
design of the control gear or LED driver electronics. A smart LED
driver can adjust for brightness degradation over lifetime, can provide
the drive characteristics to adjust for color; and replace the need for
LED binning to a desired color and brightness by using spectral tuning on a set of different LED’s in a system to dial in to a desired color
and brightness characteristic.
effects, i.e. natural light from the side of the room with windows to the
outside or hallway lighting reflecting into a room.
Figure 1: LED Bins on the Chromaticity Diagram
Spectral Tuning versus Binning
Spectral tuning is combining the spectral power distributions of several LEDs, for example mixing red, green, and blue LEDs properly
resulting in white light. This RGB combination is also used to create
almost any color of light. If the LED driver is not designed to accommodate a set of different LEDs, then the designer has to choose from
binned LEDs in order to create a specific color. Binning is the
process manufacturers use to group LEDs based on luminous flux
and color. As an example, Figure 1 shows the “bins” for an industry
standard set of LEDs.
The bins are showed by the rectangular regions plotted on the Chromaticity Diagram. A set of light fixtures that contain LEDs from a specific bin will be close in color and brightness characteristics. However, in a large office or factory environment containing many light fixtures, binning may still result in non-uniform light color that will be
noticeable across a large set of light fixtures. A binned LED design
will not provide a way to vary the color of the light fixture. A set of different LED colors using feedback to tune the spectral characteristics
of the different LED’s in a system can create a compensated lighting
system in the office environment that will create a uniform effect
across the room. Spectral tuning can also compensate for other
30
Bodo´s Power Systems®
Another effect of LEDs is the
shift in color from a change in
the LED forward current. Figure
2 shows color change versus
forward current for an industry
set of LEDs.
Figure 2: LED Lamp Units by
Application
The LED driver can be designed with a tight constant current (CC)
output tolerance, however tightening the CC tolerance will increase in
cost of the LED driver. A lower cost solution is when the designer
uses a feedback system to adjust for LED color shift where the feedback compensates the color variance due to forward current across a
set of LEDs.
Binnig LEDs usually has manufacturing implications that result in
increased cost of the LEDs purchased. Just because a binned set of
March 2012
www.bodospower.com
LIGHTING
LEDs is specified, a number of LED drivers may still not match the
binned application bias forward current set point across a large number of fixtures. There are also temperature effects and lifetime
degradation effects that can cause variation in fixture color.
Feedback using Spectral Tuning
Feedback or the use of a control scheme that can counter the variation effects of the system will be described to create a fixture that can
automatically adjust color and brightness. Color sensors and a
microcontroller are used to process the sensor inputs. An example
color sensor uses photo diodes with a non-organic three way color filter, offer exceptional stability and very low drift over temperature and
ageing, and the filters are designed to implement the spectral sensitivity curve of the human eye (CIE1931).
power supplies providing up to 10W each for LED strings containing
amber and green LEDs. This gives a total electrical power of 50W.
Figure 5 shows this luminaries design at full power. The color sensor
is located in the middle of the luminaire array, facing down, to
achieve a proper measurement of the light color and intensity.
No color or brightness differences could be seen by test personnel.
Figure 6 shows luminaries’ dimmed down. Notice some of the luminaries’ actually turned off due to high ambient light conditions, i.e.
sun light from the windows.
The schematic of the closed loop spectral tuning luminaire is shown
in Figure 3.
Figure 5: Spectral Tuning Luminaries at full power
Figure 3: Spectral Tuning Luminaire
The control loop is shown implemented with a micro controller. The
control loop measures both brightness and color through the sensor
and uses the PWM signal to adjust the currents in the LED strings.
The FAN7346 has the ability to control the current in the individual
LED strings with a PWM input signal. The power supply can be a
power factor correction front stage followed by a LLC dc-dc second
stage to provide power to multiple LED strings, Figure 4. The power
supply could also be an off-the-shelf design with the FAN7346 controlling the feedback to the power supply. Alternative designs can
consist of three power converters (30W/10W/10W) independently
controlling three sets of LED strings using white, green, and amber
colors creating a white based tuning system or use three strings with
identical power supplies to “mix” three strings with red, green, and
blue LEDs for a wider color tuning range. The need to bin the LED
colors is not required; pick low cost LEDs that have the performance
needed for the light application.
Figure 6: Spectral Tuning Luminaries dimming
Conclusion
A LED system that uses spectral tuning is shown to provide uniform
color characteristics in office or factory environments. Spectral tuning
allows color compensation from sunlight or other light sources that
may be affecting the space where brightness and color control are
desirable. The feedback system can also offset aging or drift effects
associated with LED lifetime and color shift. Cost effects from tightly
binned LEDs are also eliminated since spectral tuning feedback is
used to control the color. Other benefits from the example presented
can include calibration, implementing advance protection features,
setting safety light conditions to balance light output versus power
used from a battery backup versus lighting a desired escape route,
and dimming can be remotely controlled through a wireless interface
targeting specific fixtures versus controlling the entire system.
www.fairchildsemi.com
Figure 4 Spectral Tuning Luminaire Power Supply
Example System
An example system was created to tune for white lighting in an office
environment. Three flyback PFC power supplies were operated in
parallel with the main power supply operating with output power up to
30W driving the main string of white LEDs along with two additional
32
Bodo´s Power Systems®
About The Author
Brian Johnson is the America’s and Europe Lighting Specialist for
Fairchild’s LED Lighting Product Segment. He has been with
Fairchild for over a year after spending 20+ years rotating in Development and Marketing positions in the Power Electronics Industry.
He graduated from Purdue University with a B.S.E.E. and M.S.E.E.
February
March 2012
2012
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M A G N E T I C M AT E R I A L S
Advanced Ferrite Material
for Photovoltaic Systems
Nearly loss-less
Low-loss and high saturation flux density core materials in reactors and transformers
are a key determining factor for the efficiency of inverters.
The new TDK PE90 ferrite is a cutting-edge material that minimizes reactor losses in
the step-up chopper and smoothing circuits of inverters for photovoltaic systems, thus
enabling decisive increases in conversion efficiency.
Based on material of TDK-EPCOS
State-of-the-art inverters and power conditioners for photovoltaic systems have at least two reactors that are vital for the power conversion processes. One reactor is needed for the boost converter (stepup chopper circuit) and one is needed for output EMC filtering or
smoothing (Figure 1). The future goal for modern inverters is to
achieve an efficiency of 98 percent and higher.
At least two power reactors are needed for solar inverters: one in the
boost converter (step-up chopper) and one at the ouput of the inverter for EMC filtering. Besides the IGBTs, the losses in the reactors are
a major determining factor of the overall efficiency of the inverter.
Advanced TDK PE90 ferrite opens new possibilities
The new TDK PE90 ferrite represents a further development of the
existing high saturation flux density material PE22. The two materials
were tested in a prototype reactor with dimensions of 109 × 55 × 115
mm³. The adjusted air gap values and inductance values of PE22
and PE90 were at a similar level (1.1 mH), and the DC superposition
current peak value, which is determined by magnetic saturation
(inductance decreased by 10 percent from IDC of 0 A), was adjusted
to around 20 A. DC superposition characteristics, which determine
the current capability of reactors and transformers, are a vital factor
for their design. While the conventional high saturation magnetic flux
density material PE22 reached magnetic saturation at 19 A, the
newly developed PE90 could still function as a reactor at up to 21 A,
a level about 10 percent higher than that of PE22 (Figure 2).
Thanks to its excellent material characteristics and high saturation
magnetic flux density, the TDK PE90 material allows a current level
that is approximately 10 percent higher than the conventional PE22
material. The prototype reactor used in the test is shown on the right.
Figure 1: Basic circuit configuration of inverters
Conventional core materials cause reactor losses of around 0.5 percent of the output power for each reactor. Until recently, this was not
considered significant. In the increasingly competitive solar market,
however, these values negatively impact on a system’s marketability.
Thus, the design of the reactors and the transformers is becoming an
ever important focus of manufacturers of inverters and power conditioners.
If the reactors and transformers are to help make inverters more efficient, they must exhibit a saturation magnetic flux density that is high
enough to support the peak current of inverters in the 3.3 to 5.5 kW
class, which are widespread for household photovoltaic systems.
They must also have much lower core losses than can be achieved
with conventional core materials such as silicon steel sheets or
sendust. A solution for this application is the advanced TDK PE90
ferrite material with excellent loss and saturation flux density properties.
34
Bodo´s Power Systems®
Figure 2: Example of inductance change vs. DC superposition characteristics
Furthermore, the core loss of TDK PE90 material at 100 °C was 23
percent lower than that of PE22, which makes the rise in magnetic
flux density steep, and the minor loop’s linearity was maintained right
up until it was saturated. In other words, PE90 is an outstanding
power ferrite with high saturation magnetic flux density Bs and is the
first such material to qualify as a low-loss material. As a result, it is
now possible to replace reactors that employ soft magnetic metal
with reactors that use TDK PE90, without changing the size.
March 2012
www.bodospower.com
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Image sampling magnified
500,000X via scanning
electron microscopy (SEM).
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–! !2Xaadb;^VXR8]R0[[aXVWcbaTbTaeTS2Xaadb;^VXR2XaadbcWT2Xaadb;^VXR[^V^STbXV]b0_Tg?aTRXbX^]
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P]S _a^SdRc ]P\Tb \Ph QT caPST\PaZb ^a bTaeXRT \PaZb ^U cWTXa aTb_TRcXeT ^f]Tab 1?B"! !
M A G N E T I C M AT E R I A L S
Cutting reactor losses by up to a third
The advantages of TDK PE90 ferrite are even clearer when compared to conventional materials such as silicon steel sheet and
sendust. A comparison of the actual performance of the reactors integrated in the power conditioner based on their total iron and copper
losses demonstrates the superiority of TDK PE90 over conventional
materials. In a simulation of the reactors used for the smoothing circuit of the inverters for 3-kW photovoltaic system PE90 material
cores exhibit 33 percent lower losses than a similar sized silicon steel
sheet reactor and approximately 30 percent less than a similar sized
sendust reactor (Figure 3).
Figure 3: Loss comparison with silicon steel sheet and sendust
and sendust. Moreover, the latest IGBTs for high power applications
feature significantly lower losses and are much faster, enabling 30 to
50 kHz drive elements that are in line with the high-speed switching
requirements of power conditioners.
If all of the installed reactors, including those for step-up choppers,
are designed with the advanced ferrite material TDK PE90 with its
superior core loss frequency characteristics, the operating frequency
of inverters can be set at 30 to 35 kHz rather than the currently standard 15 to 20 kHz. Nearly doubling the operating frequency range
makes the use of silicon steel sheets and sendust difficult. Even in
the higher frequency range, the core loss of TDK PE90 remains
much lower than that of the sendust material at 15 to 20 kHz. While
the copper loss increases at the higher frequencies, the magnetic
flux density required decreases, which means that the core size can
be reduced. As a result, the use of TDK PE90 as core material will
enable even more efficient inverters with even smaller reactors to be
designed.
Initial permeability * [kW/m³]
at 23 °C: 2200
Core loss PCV ** [kW/m³]
at 90 °C: 60
at 100 °C: 68
Core material
Silicon steel sheet
Core dimensions [mm] *
PE90
Saturation magnetic flux density Bs *** [mT]
105 × 110 × 60
at 100 °C: 430
Reactor loss [W]
14.4
9.7
Residual magnetic flux density Br *** [mT]
at 23 °C: 170
Loss ratio [%] **
100
67.4
Intrinsic coercive force HC *** [A/m]
at 23 °C: 13
Loss reduction [W]
—
4.7
Curie temperature TC [°C]
250 min.
Specific electric resistance [Ω x m]
6.0
Core material
Sendust
PE90
Apparent density dapp [kg/m³]
4.9 × 103
Core dimensions [mm] *
100 × 110 × 60
105 × 110 × 60
Thermal expansion coefficient [1/K]
12 × 10-6
Reactor loss [W]
13.8
9.7
Thermal conductivity Κ [W/mK]
5
Loss ratio [%] **
100
70.3
Specific heat Cp [J/kg × K]
600
Loss reduction [W]
—
4.1
Flexural strength δb3 [N/m²]
9 × 107
Young modulus E [N/m²]
1.2 × 1011
Magnetostriction constant λS
-0.6 × 10-6
* Cross-section of the core and rectangular windings same for both
materials. Number of turns where iron and copper losses are
almost the same.
** Proportion where the loss of compared reactor is 100
Figure 3: Loss comparison with silicon steel sheet and sendust
*
at 1 kHz, 0.4 A/m
**
at 25 kHz, 200 mT
***
at 1194 A/m
Table: Material characteristics of TDK PE90 ferrite material
Enabling high frequency inverters with smaller reactors
Most inverters that achieve 95 percent efficiency or higher employ
trench IGBTs, which provide high-speed operation and low loss properties. But these IGBTs, with a built-in high-speed soft recovery
diode, are able to support switching up to approximately 30 kHz,
which is beyond the operating frequency range of silicon steel sheets
36
at 23 °C: 530
Bodo´s Power Systems®
January
March 2012
2012
www.epcos.com
www.bodospower.com
INTERNATIONAL VDI CONFERENCE 2012
Simulation in Automotive
Lightweight Engineering
Focus: Material Behavior
Internationally renowned technology leaders will present their latest
results on the following topics:
• how to define material properties requirements with respect to virtual development in
the automotive industry
• how to simulate fiber-reinforced plastics and create realistic FRP models for
integration in the CAE process
• how to predict strengths and failures of glued and welded hybrid material structures
• how to integrate manufacturing process data in crash behavior simulations of highstrength steels and cast components
Hear from experts including:
BASF • BMW Group • Daimler • DLR • Ford • Lamborghini • Lanxess • Magma •
Magna Steyr • Opel • Polytec UK • Suisse Technology Partners • University of Leicester
Place and Date:
Chairman:
09th and 10th May, 2012
Dorint Hotel Pallas, Wiesbaden
DR.-ING. RALPH STENGER
Director GME vehicle simulation, Adam Opel AG,
Rüsselsheim
www.vdi.de/simulationlightweight
Organized by VDI Wissensforum | Phone +49 211 6214-201 | Fax +49 211 6214-154
IGBTS
The Next Generation
Chipset Technologies for
Higher Operating Temperatures
This article presents a newly developed 1700V IGBT and diode chip set generation
with optimized performances for 175°C junction temperature operation.
By B. Aydin, C. Corvasce, ABB Switzerland Ltd, Semiconductors
Over the past few years, most of the efforts in power semiconductors
development have been targeting the increase of the power density
for a given application. Such a performance target can be achieved
by reducing the losses, increasing the safe operating area and maximizing the allowable junction temperature during operation. A higher
allowable junction temperature of the semiconductor offers better
conduction of the generated heat and hence, an increase in the
power density for a given device area. The design of power electronic devices operating at ever increasing temperatures brings several
challenges: demonstrate the switching capability by keeping the maximum ratings at the maximum specified junction temperature (Tjmax)
and also prove stable temperature-dependent performances and high
reliability levels at Tjmax [1]. Here we present the 2nd generation of
the 1700V SPT+ IGBT, able to be operated up to a maximum junction temperature of 175°C. The new IGBT design combines the
advantages of an optimum profiling of the enhancement layer with a
novel termination technology, offering outstanding performances for
low to medium inductance applications as required in automotive,
industrial and regenerative power source fields. The performance
chart in inverter mode of a module mounting three IGBTs and three
anti-parallel diodes which can typically operate in a medium inductance application has been simulated and is shown in Fig. 1. The
results clearly illustrate the advantages given from the new chip set
technology platform when compared with the previous SPT+ chip set,
which was specified for Tjmax=150°C and optimized for high inductance applications. The reduction of the conduction losses achieved
in the 2nd generation of the SPT+ technology offers an increase of
8% (green line) in the inverter output current over the frequency
range from 250Hz to 1000Hz in a typical water-cooled application.
When combined with the 25°C higher temperature capability, the
improvement increases up to 20%, as shown in the red line.
2nd Generation SPT+ IGBT Technology
The SPT+ IGBT planar technology successfully introduced in 2005, is
avaible in different voltage classes ranging from 1.2kV to 6.5kV [2].
The key advantage of the SPT+ technology is the reduction of the
conduction losses when compared with the original planar IGBT cell
while maintaining the same controllable switching behavior of the
SPT (Soft Punch Through) vertical design. This is achieved by introducing an optimized n-type enhancement layer surrounding the Pwell in the IGBT MOS cell, as shown in the cross section in Fig. 2a.
The enhancement layer improves the carrier concentration on the
cathode side of the IGBT, thus lowering the on-state voltage drop
without significantly increasing the turn-off losses. However the ntype enhancement layer has the inherent problem of reducing the
blocking capability of the device and possibly increasing the cell sen-
38
Bodo´s Power Systems®
sitivity to dynamic avalanche failures. Hence, the shape of the
enhancement layer doping profile must be carefully optimized in
order to maximize the enhancement feature and minimize the loss of
blocking and avalanche performance. This can be achieved by narrowing the doping profile and increasing the peak concentration as
sketched in Fig. 2b. As a result, the high electric field area is reduced
with minimum impact on the blocking capability and the plasma concentration at the cathode side is further enhanced with an effective
reduction of the conduction losses.
Figure 1: Simulation of the inverter output current vs. switching frequency for 1700V SPT+ and the 2nd generation SPT+ chip set with
175°C operation capability.
Figure 2: The SPT+ planar cell (a) and of the optimized enhancement profile used in the 2nd generation 1700V SPT+ IGBT (b).
February
March 2012
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IGBTS
Thanks to the beneficial effect on the blocking capability of the optimized enhancement profile, a thinner n-base design can be used for
the 2nd generation SPT+ IGBT with a consequent further reduction of
the on-state losses. A reduction of more than 450mV in the conduction losses is achieved using the new technology when compared to
the SPT+ platform which, targeting high inductance applications, was
designed with thicker silicon.
To guarantee reliable operation at high temperatures, a new termination design based on the biased ring concept has been developed.
The termination consists of a number of diffused rings contacted by
metal islands and interconnected by a semi-insulating layer, as
shown in the schematic cross section in Fig. 3a. This termination
design has been proven to be immune to inter-ring distance variations and interface states while offering a narrower leakage current
distribution when compared to the previous termination design, which
was based on the junction termination extension concept. Thanks to
this design and process, the leakage current at Tj=125°C and
VCE=1700V has been dramatically dropped to a typical value of
120μA, a reduction by a factor of 4 when compared to the values
achieved from chips with a non-optimized passivation process, as
shown in Fig. 3b. This low leakage current level has been proven to
enable stable operation at Tjmax=175°C and for 2500V – 3300V at
Tjmax=150°C.
Figure 4: The conventional SPT+ diode and the FSA diode (a) showing the probability plot of leakage measured at VR=1700V and
Tj=125°C (b)
Figure 3: New termination design (a) and the probability plot of the
leakage current measured at VCE=1700V and Tj=125°C (b)
Field Shielded Anode (FSA) Diode Technology
The conventional SPT+ diode uses locally incorporated deep levels
by H+ irradiation for local lifetime control in order to tailor the plasma
distribution and guarantee stable operation at Tjmax=150°C. In this
design, shown in Fig. 4a, the electric field evolving during reverse
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• New developments;
- MVDs, Wind, STATCOM
• Traction refurbishment
• Upgrading of GTOs / GCTs
• System optimisation
For small volume enquiries, use the extensive IXYS Distribution Network, details via our websites:
USA:
IXYS Long Beach
Tel: +1 (562) 296 6584
e-Mail: service@ixyslongbeach.com
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e-Mail: sales@ixys.com.tw
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Bodo´s Power Systems®
39
IGBTS
blocking penetrates the zone of radiation defects already at very low
reverse voltages. This generates a leakage current which does not
allow stable blocking operation of the chip at Tjmax=175°C. The newly
developed Field Shielded Anode (FSA) [3] is characterized by a modified doping profile. The depth of the anode is maintained by introducing a deep profile with a reduced concentration and resembling a low
p-doped buffer, preventing the electric field from reaching the zone of
radiation defects during blocking. In addition, a shallow highly doped
p-layer ensures good contact and good anode injection in the highcurrent region to enable a good surge current capability.
The radiation defects position and concentration are then tuned to
tailor the plasma distribution to match the conduction and dynamic
properties of the SPT+ diode. This FSA design has the inherent
advantage of separating the radiation defects from the space charge
region resulting in a significantly reduced high temperature leakage
current. Figure 4b shows the comparison between the leakage current distributions of the FSA diode chip when compared to the conventional SPT+ platform. The reduction by a factor of 3 in the leakage current measured at Tj=125°C and VR=1700V allows the FSA
diode to be operated at Tjmax=175°C.
Because the FSA diode is realized by using a single mask step, the
vertical anode profile is also introduced in the horizontal direction. A
careful optimization of the lateral design is therefore needed to reach
the very high robustness of the conventional diode.
1700V Chip Set Performance
Extensive measurements have been carried out to verify the performance of the new 1700V chip setup to the maximum junction temperature of 175°C. A stray inductance value of 200nH per IGBT chip rated
150A, and 100nH per diode chip rated 300A have been used.
IGBT Switching Characteristics
In Fig 6, the switching waveforms of the new 1700V IGBT are shown
as measured under nominal conditions i.e. at 150A and 900V at
Tj=175°C. In the turn-off test (Fig. 6a), the IGBT was switched off
using an RG,off of 9.4Ohm with a stray inductance of 200nH which
results in a voltage rise of 4260V/μs. The optimized N-base region
combined with the SPT buffer allows the collector current to decay
smoothly, ensuring soft turn-off behavior without any disturbing voltage peaks or oscillations.
Figure 6: IGBT switching waveforms at Tj=175°C: (a) turn off, (b) turn on.
Figure 6b shows the turn-on waveforms under nominal conditions at
Tj=175°C. The low input capacitance of the planar SPT+ cell allows a
fast drop of the IGBT voltage during the turn-on transient. This, combined with the low loss FSA diode brings the turn-on switching losses
down to a typical value of 68mJ. The reverse recovery waveform of
the FSA diode under nominal conditions at Tj=175°C is mirrored in
the turn-on current waveform. By carefully designing the anode profile and the local lifetime control peak, a short, but still smoothly
decaying current tail was achieved resulting in total recovery losses
of 113mJ.
Figure 7: RBSOA capability of new 1700V IGBT chip (a) and FSA
diode (b) at Tj=175°C.
Figure 5: On-state characteristics as a function of the maximum junction temperature: (a) IGBT, (b) FSA diode.
Static Characteristics
In Fig. 5a, the on-state curves of the 2nd generation 1700V SPT+
IGBT can be seen. The typical on-state voltage drop (VCE,on) at nominal current and Tj=125°C is 2.45V. The IGBT shows a strong positive
temperature coefficient of VCE,on, starting already at low currents up
to Tj=175°C, which enables good current sharing capability in applications requiring multiple chip paralleling.
The typical forward voltage of the 1700V FSA diode measured at
Tj =125°C is 2.15 V, as shown Fig. 5b. The diode also exhibits a positive temperature coefficient starting at 200A well below the nominal
current, which is the result of an optimized local carrier lifetime profile. The temperature coefficient turns tnegative from 150°C with a VF
decrease of less than 1mV/K. In the case of a weak negative temperature coefficient, the thermal coupling between the diode and IGBT
chips in the module is still sufficient to avoid thermal runaway of the
diode with the lowest forward voltage.
40
Bodo´s Power Systems®
In order to evaluate the SOA performance of the 2nd generation
1700V SPT+ IGBT technology, the chips have been subjected to a
wide range of switching tests under extreme conditions in terms of
current, voltage and stray inductances. Figure 7a shows the IGBT
chip turn-off capability of two parallel chips measured at Tj=175°C
without an active clamp. The chip withstands a strong dynamic avalanche regime turning off a current higher than four times the nominal
value without any oscillation. The reverse recovery safe operating
area (SOA) of the new FSA technology was extensively investigated
over the whole temperature range using high DC-link voltage and
high stray inductance (VDC=1400 V, LS=800nH). The current was
stepped up to 2 times the nominal value and, after a successful pass,
the reverse recovery di/dt was increased by lowering the gate-resistor value (RG, on) and by increasing the gate voltage of the switching
IGBT until the diode failed. In Fig. 7b, the last pass reverse recovery
waveforms of the 1700V FSA diode can be seen. The diode manages to withstand a reverse recovery current speed of 1.6kA/μs
resulting in a peak power of 550kW. This high recovery ruggedness
was achieved thanks to the optimization of the anode design in con-
March 2012
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junction with the resistive extension of the active junction
explained above.
IGBT Short Circuit and Diode Reverse Recovery Softness
The excellent short circuit capability of the new 1700V SPT+
IGBT is shown in Fig. 8a where the short circuit waveforms at
Tj=175°C and a DC-link voltage of 1300V can be seen. After the
test thermal runaway occured for pulse times up to 17μs with a
short circuit current of 440A and a total dissipated energy of 9.8J.
The SPT buffer and anode design used in the SPT+ IGBT have
been optimized in order to obtain a high short-circuit capability,
even at gate voltages exceeding the standard gate drive voltage
of 15V and over the whole junction temperature range from 40°C to 175°C.
Figure 8: IGBT Short Circuit at Tj=175°C, (a) and Diode Reverse
Recovery Softness at Tj=25°C (b).
Your ideas – Our design
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for high-power applications. Electronicon has over 70 years
experience of capacitor manufacturing and 40 years experience of film
metallization processes. This expertise puts us in an ideal position to
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Custom-designed to meet your requirements. Just ask.
In Fig 8b the reverse recovery softness test performed at 1/10th
of the nominal rated current at a DC-link voltage of 1300V and
using double the nominal stray inductance (LS=200nH) is shown.
It confirms the soft recovery behavior showing only small oscillations and a peak overshoot voltage of 1360V.
References
[1] Schlapbach U. et al., “1200V IGBTs operating at 200°C? An
investigation on the potentials and the design constraints”,
Proc. ISPSD’07, Jeju Island, 2007.
[2] Rahimo M. et al., “SPT+, the Next Generation of LowLoss
HV-IGBTs”, Proc. PCIM’05, Nürnberg, Germany, 2005.
[3] Matthias S. et al., “Field Shielded Anode (FSA) Concept
Enabling Higher Temperature Operation of Fast Recovery
Diodes”, Proc. ISPSD’11, San Diego, USA, 2011.
www.abb.com
We exhibit at:
Booth: 013/E70 Booth:12/239
www.bodospower.com
March 2012
Bodo´s Power Systems®
41
NEW PRODUCTS
40V Quad Precision Amplifiers Feature Lowest Noise
Intersil Corporation expanded its family of precision amplifiers, introducing a set of 40V low power, high ESD products that provide excellent DC accuracy and noise performance. These new quad amplifiers
are ideally suited for 12-bit to 24-bit process control, instrumentation
and data acquisition applications.
Designed on Intersil’s PR40 advanced bipolar process, the ISL28407,
ISL28417, and ISL28408 all meet the low noise requirements for high
gain front ends in industrial control designs while reducing total
power consumption for high signal count applications.
The ISL28407 operates from 4.5V to 40V with an ultra-low bias current drift of 0.3pA/°C over temperature (-40°C to +85°C), which is 30
percent lower than competitive quad precision amps. The ISL28407’s
low offset of 90uV maximum and offset drift of 0.8uV/°C maximum
provide high DC accuracy over temperature. It features an industryleading combination of low power (290uA maximum per channel),
1MHz bandwidth, low input bias current drift (0.3pA/°C) and low noise
(13nV/?Hz @ 1kHz).
The ISL28417 is designed for sensor front ends, DAC buffering, precision voltage regulation or low noise instrumentation applications
that need a diverse range of signals. It delivers very high performance while consuming only 530uA maximum per channel, with low
frequency noise of only 250nV peak-peak (0.1Hz to1 to 10Hz) and
8nV/?Hz @ 1kHz. Offset voltage is just 70uV maximum, with offset
drift of only 0.75uV/°C maximum.
www.intersil.com
1700V SiC Schottky Diodes to Improve Efficiency and Enable Cost Savings
Cree, Inc. has introduced a series of packaged diodes that deliver the industry’s highest blocking voltage available in SiC Schottky technology. Cree’s 1700V Z-Rec® Schottky diodes virtually eliminate the reverse
recovery losses suffered in silicon PiN diode
alternatives, enabling ultra-efficient, smaller
and lighter systems—all with improved reliability. These newly released packaged products extend the performance improvements
and system cost savings enabled by Z-Rec
technology at 1700V to lower-power applications designed with discrete components.
“Cree’s 1700V silicon carbide Schottky
diodes are ideal for high-efficiency power
electronics systems,” explained Cengiz
Balkas, Cree vice president and general
manager, Power and RF. “They provide all
the proven benefits of Cree’s Z-Rec SiC
Schottky diodes—zero reverse recovery
losses, temperature-independent switching
and higher frequency operation.”
While the 1700V bare die have been available for customers who design their own
custom power modules, the new TO-247-2
packages allow customers to take advantage of SiC for lower-power 1700V designs,
enable more design flexibility in choosing
current levels, and support a faster time to
market.
Designated the C3Dxx170H Series, the new
Cree SiC Schottky diodes are rated for
10A/1700V and 25A/1700V and are available in an industry standard TO-247-2 package. Operating junction temperature is rated
for -55°C to +175°C.
www.cree.com/power
C-Band GaN HEMT Amplifiers for VSAT Applications
Mitsubishi Electric is introducing internally
impedance matched GaN HEMT power
amplifiers for C-band VSAT stations which
transmit in the 5.8-6.7GHz frequency range.
The MGFC50G5867 and MGFC47G5867
feature industry leading output power of
100W and 50W respectively. The typical linear power gain (Glp) is 10dB for both
devices.
The two new devices have a power added
efficiency (PAE) more than 43% and a high
voltage operation (VDS=40V. Due to the
good linearity of the GaN process the 100W
42
Bodo´s Power Systems®
GaN amplifiers have become very popular
due to their high breakdown-voltage and
power density as well as high electron saturation velocity. Furthermore, their ability to
contribute to power saving and downsizing
of power transmitter equipment make them
very attractive and lower the importance of
GaAs amplifiers which have been commonly
employed in C-band transmitters in the past.
device can achieve 3rd-order Inter Modulation (IM3) of -25dBc at 46dBm output power.
March 2012
www.MitsubishiElectric.de
www.bodospower.com
NEW PRODUCTS
ScopeCorder is Key to Harmonizer’s Power-Quality Testing
A Yokogawa DL850 ScopeCorder is playing a key part in tests on
synchronised switching devices in power systems being carried out
by Harmonizer Power Quality AB: a Swedish company that provides
power-quality services for industrial and utility customers.
Among the services provided by Harmonizer are measurements of
active and reactive power, power factor, current and voltage variations, harmonics and transients. Typical applications include
analysing the best location for reactive power compensation in a network, calculating regulation cycles for optimum harmonic- and powerflow control, sizing capacitor banks for shunt or series compensation,
calculating and designing harmonic filters for the suppression of harmonic distortion, and sizing surge arresters for transient overvoltage
limitation.
The application for which the Yokogawa DL850 ScopeCorder is used
relates to the synchronised switching of high-voltage filter banks: in
particular, programming and checking the functioning of the synchronising device and the circuit breaker. Unsynchronised switching of
capacitor and filter banks often results in high-voltage and high-current transients that can have adverse effects on power systems performance and reliability. In order to eliminate these high switching
transients and the resultant power-quality problems, the closing and
opening operations of the circuit breaker have to be synchronised,
which requires accurate monitoring of the relevant electrical parameters.
In the ideal scenario, the circuit breaker should be closed when the
voltage across the load is close to zero and opened in such a way as
to avoid short arcing times which can lead to re-ignitions or re-strikes.
To check that these requirements are met, it is necessary to carry out
measurements on the circuit-breaker closing and opening times while
recording the network voltage and filter current during opening and
closing operations.
www.tmi.yokogawa.com
The Future of Programmable DC Power
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MAGNA-POWER
ELECTRONICS
NEW PRODUCTS
DS4000 Series Digital Oscilloscopes Feature Up To 1GHz Bandwidth
Rigol Technologies EU GmbH introduces the DS4000 series digital
oscilloscope, featuring up to 500 MHz bandwidth (BW), 1.5GHz
bandwidth differential and single-ended active probes. Designed to
reduce test time in research, development and failure analysis applications, Rigol's DS4000 series digital oscilloscopes make detecting
signal and device characteristics easier than ever with advanced
waveform search, visualization and replay.
Rigol's DS4000 series features specifications of up to 500 MHz BW
with 4GSa/s sample rate, a standard 140,000 points of deep memory,
up to 200,000 frames for waveform record and replay, and up to
110,000 waveforms/second/acquisition rate. In addition, with Rigol's
innovative UltraVision technology, DS4000 digital oscilloscopes offer
intensity grading display and real-time waveform record and display,
with customizable real-time hardware filters available.
With a variety of trigger functions and automatic measurements with
statistics, Rigol's DS4000 series is perfect for a broad range of applications. These digital oscilloscopes feature serial bus trigger and
decodes such as I2C, SPI, RS232, and CAN, as well as advanced
math functions. Rigol also offers a variety of active and passive
probes and other accessories, arm mounts and rack mount kits.
Featuring an easy-to-read, large 9" colour display, the DS4000 series
offers an attractive profile. Thin and lightweight, the DS4000 series
are perfect for tight spaces or for those that need a powerful portable
oscilloscope.
Designed to target the requirements of R&D engineers, production
test engineers and advanced researchers with its innovative technology, industry-leading specifications, powerful trigger functions and
broad analysis capabilities, Rigol's DS4000 series is ideal for applications in the communications, aerospace/defense, research and education, industrial and consumer electronics, computing and instrumentation industries.
DS4000 Series oscilloscopes are available in 100 MHz, 200 MHz,
350 MHz or500MHz, 2 or 4 channel varieties. Pricing for the
DS4000 series begins at EUR 1495,00 and are dependent upon configurations and quantity.
info-europe@rigoltech.com
Mini-Flat Transistor Couplers
Toshiba Electronics Europe (TEE) has announced two ultra-miniature
photocouplers that provide ‘drop-in’ replacement for some of the
company’s most popular coupler parts while reducing board mounting
profiles by over 17%.
The TLP184 and TLP185 ‘mini-flat’ couplers can be used as direct
replacements for Toshiba’s TLP180 and TLP181. These popular
devices have become established in high component density applications ranging from programmable controllers and AC/DC input modules to telecommunications devices and office equipment. Pin- and
functionally-compatible with their predecessors, the new devices
have a maximum profile of just 2.3mm. They offer the same minimum
isolation voltage (BVs) of 3750Vrms but have a higher insulation
peak voltage (UIORM) of 707V.
Both of the photocouplers are designed to operate across an extended temperature range from -55ºC to 110ºC and have minimum collector-emitter voltages of 80V. The TLP184 can operate directly from an
AC input current and is rated for a maximum forward current of
±50mA. Maximum forward current for the TLP185 is 50mA. Maximum
pulse forward current ratings are ±1A and 1A respectively.
Construction of the TLP184 and TLP185 is based around a photo
transistor that is optically coupled to a GaAs IR LED. In the case of
the TLP184 device an inverse parallel connection supports the AC
input.
www.toshiba-components.com
44
Bodo´s Power Systems®
March 2012
www.bodospower.com
CONTENTS
Power Management DC/DC Converters Simplify Design
ZMD AG (ZMDI), a global supplier of analog
and mixed-signal solutions for automotive,
industrial, and medical applications, has
announced a new family of 1, 2, and 3A current-mode synchronous buck DC/DC converter integrated circuits (ICs) tailored for
ease of design, quick product development,
and low bill of materials (BOM) costs.
The 1MHz ZMDI ZSPM401x product line
comprises three families and 18 products:
the ZSPM4011 1A family, the ZSPM4012 2A
family, and the ZSPM4013 3A family. Thanks
to their high level of integration, the ICs
require only 4 external devices - 3 capacitors and 1 inductor. Each family comes in
fixed-output voltage options of 1.5, 1.8, 2.5,
3.3 and 5 volts to reduce external part
counts, while allowing for quick part selection and easy design. An input voltage range
of 6V - 24 V (3A option is 6V to 20V) lets
designers target more applications with one
basic 'cookie-cutter' design technique.
Each family also offers a variable output voltage option of 0.9V to 5V for maximum part
flexibility. At 5V in and 1.8V out, the parts
offer 90% efficiency. At 6V in and 3.3V out,
efficiency increases to 93%. The high efficiency of the design eliminates the need for
any external thermal protection. Additional
features are input supply under-voltage lockout, soft-start for controlled startup with no
overshoot, and full protection for over-current, over-temperature, and Vout over-voltage.
Synchronous switching at 1MHz (+/- 10%)
and internal compensation minimizes the
number and size of external parts, minimizing board real estate. A typical, low standby
mode of 5uA maximizes energy efficiency
while reducing the application's power budget. All of the ICs are designed to operate
over a robust temperature range from -40 to
+125 degrees C.
Target applications for these devices span
an array of consumer and communications
products, including notebooks, tablets, smart
phones, portable GPS systems, printers,
cable modems, voice-over-IP (VOIP)
phones, and wireless access points based
on the IEEE802.11 wireless local-area-network (LAN) standard.
www.zmdi.com
TEST & MEASUREMENT
More than ever…
NEW
...we need energy, power and our planet. Yokogawa is the market
leader in innovative test and measurement technologies focusing on
the challenges related to energy conservation, efficiency and sustainability. Together with our customers we help design, build and deploy
next generation products that increase the quality of life, productivity
and the efficient use of the world’s resources.
Energy efficiency in everyday consumer goods, new greener modes of
transport and development of renewable energy sources are some of
the areas where more than ever Yokogawa is changing everyone’s future
for the better. Just take a closer look to the WT1800 Power Analyzer.
We are working on a sustainable future
For more information on our Power Analyzers, scan the code with
your smartphone. Or check the website tmi.yokogawa.com.
Alternatively you can either contact Yokogawa Europe B.V. on
+31 88 464 1000 or send an e-mail to tmi@nl.yokogawa.com and
ask Corrie Zuurveld for more information.
International Exhibition and Conference
for System Integration in Micro Electronics
Nuremberg, 8 – 10 May 2012
The place to be!
smt-exhibition.com
Organizer:
Mesago Messe Frankfurt GmbH
Rotebuehlstrasse 83 – 85
70178 Stuttgart
Germany
Phone +49 711 61946-828
Fax +49 711 61946-93
smt@mesago.de
High-Speed Inverter Switching IGBT to 1350V and 40A
Toshiba Electronics Europe (TEE) has announced its first high-speed,
integrated IGBT to feature a voltage rating up to 1350V. Designed for
voltage resonator inverter switching, the new device will address
growing demands for IGBTs with higher voltage withstand capabilities.
The N-channel ‘enhancement mode’ GT40RR21 saves space and
component count by combining an IGBT and a reverse recovery freewheeling diode into a single, compact monolithic device. Suitable for
high-temperature operation, target applications for the IGBT include
induction heating and induction cooking appliances.
Toshiba’s device supports very high-speed operation and can handle
peak pulse currents as high as 200A for 3μs. Low turn-off switching
losses – typically 0.30mJ at a case temperature (Tc) of 25ºC and
0.54mJ at a Tc of 125ºC – ensure high-efficiency operation.
The 1350V GT40RR21 is designed to operate with junction temperatures up to 175ºC. At 25ºC maximum collector current is 40A, and
this falls by only 5A at a temperature of 100ºC. Typical saturation
voltage at 25ºC (VCS(sat)) is only 2.0V. Maximum diode forward voltage/current is rated at 3.0V/20A.
Flyback Design to go
Evaluation kits for isolated flyback converters
Tadjusted
www.toshiba-components.com
to IC‘s of Linear Technology
TLT3573, 3574, 3575, 3748
Treadymade
design, circuit, application
optocoupler needed
Tstandard transformers available ex stock
Tno
embedded world
hall 2, stand 520
www.we-online.com/LT
www.bodospower.com
March 2012
Bodo´s Power Systems®
47
NEW PRODUCTS
The Industry’s Smallest Single-Package Power Supply Modules
ROHM has recently announced the development of the BZ6A series
of ultra-compact power supply modules that integrate an inductor,
capacitors, and all the other components needed for power supply
into a single package. The result is the smallest size in the industry
(2.3mm × 2.9mm × 1mm), making them suitable for high-density
mounting applications.
In recent years, mobile devices, including smart phones, have
become much more multifunctional, increasing the number of components along with the number of power sources needed within the circuit. The greater power requirements, along with the trend towards
increased miniaturization, demand smaller, more efficient power supplies.
The BZ6A series integrates a BU9000X series 6MHz
high-speed switching power supply LSI directly into
the board and includes all necessary components in
a single package. High performance is ensured in the
industry’s smallest* form factor. The all-in-one configuration eliminates the need for external components,
simplifying design time. Additional features include a
wide input voltage range, from 2.3V to 5.5V, making
them suitable portable devices utilizing 5V USB, as
well as an output voltage range between 1.0V and
3.3V, ensuring compatibility with a variety of sets.
www.rohm.com/eu
International Renewable
Energy Exhibition and Congress
Make a note: 15 – 18 March 2012 · Husum
www.new-energy.de
48
Bodo´s Power Systems®
March 2012
www.bodospower.com
Medical AC-DC External
Power Supplies
TDK-Lambda Germany, a group company of the TDK Corporation,
has introduced the DTM-C series of medically-certified AC-DC external power supplies – the DTM65-C model with output power ratings
from 40 to 65W and the DTM110-C rated at 90 to 110W.
Offered with a choice of output voltages from 12 to 48Vdc, the DTMC series operates from a universal AC input of 90 to 264Vac (47-63
Hz). With average efficiency greater than 87% and offload power
consumption of less than 0.5W, all models in the DTM-C series comply with ErP (Energy Related Products), EISA (Energy Independence
and Security Act of 2007), CEC (Californian Energy Commission) and
Global Efficiency Level V regulations.
These external power supplies are packaged in low profile, insulated
enclosures and are convection cooled. The operating temperature
range is from 0 up to 50°C (DTM65-C) and 0 to 40°C (DTM110-C) at
full load without derating. With 4kVac input to output isolation, all
models in the DTM-C series comply with UL/EN/IEC60601-1 Editions
2 & 3 safety approvals for medical equipment.
www.emea.tdk-lambda.com
www.bodospower.com
March 2012
Bodo´s Power Systems®
49
NEW PRODUCTS
100-V Synchronous Buck Regulator with Integrated MOSFETs
Texas Instruments Incorporated expands its high-voltage point-ofload product line by introducing today the industry’s first 100-V synchronous buck regulator with integrated MOSFETs. The 600-mA
LM5017 is the first in a new family of step-down switching regulators
that reduce PCB area and system cost while improving high-voltage
reliability in telecommunication, industrial, smart grid and automotive
systems. Used in conjunction with the award-winning WEBENCH®
online design tool, the LM5017 simplifies high-voltage DC/DC conversion and speeds the design process. For
more information, samples and evaluation
boards, visit www.ti.com/lm5017-pr.
The 600-mA LM5017, together with the 300mA LM5018 and 100-mA LM5019 available in
April, enables direct point-of-load voltage regulation from input voltages as high as 100-V.
This eliminates external transient voltage
suppressors or clamps required to achieve
reliable operation in high-voltage applications. Integrated MOSFETs eliminate freewheeling Schottky diodes and improve efficiency. Pin-compatible 4-mm by 4-mm LLP
packaging offers a scalable solution that covers a wide range of power requirements.
Constant on-time (COT) control architecture
provides excellent load transient response
with no loop compensation required, further
reducing the PCB area and simplifying the
power supply design process. Watch a video
at www.ti.com/lm5017-prv.
www.ti.com
Power Your Recognition Instantly
Based in Munich, Germany, ITPR Information-Travels Public Relations is a full-service consultancy
with over a decade of experience in the electronics sector.
As a small exclusive agency, we offer extremely high ROI,
no-nonsense flexibility and highest priority to only a handful of companies.
Strategical Support
Corporate/Product Positioning, Market/Competitive Analysis, PR Programs, Roadmaps,
Media Training, Business Development, Partnerships, Channel Marketing, Online Marketing
Tactical PR
Writing: Press Releases, Feature Articles, Commentaries, Case Studies, White Papers
Organizing: Media Briefings, Road Shows, Product Placements in Reviews and Market Overviews,
Exhibitions, Press Conferences
Monitoring and Research: Speaking Opportunities, Editorial Calendars, Feature Placement,
Media Coverage, Competitive Analysis
Translations: Releases, By-Lined Articles, Websites, etc.
Call or contact us today for a free consultation on how PR
can dramatically affect your company’s bottom line.
ITPR Information-Travels Public Relations
Stefanusstrasse 6a, 82166 Gräfelfing-Munich, Germany
Tel ++49 (89) 898687-20, Fax ++49 (89) 898687-21,
electronics@information-travels.com
www.information-travels.com
50
Bodo´s Power Systems®
March 2012
www.bodospower.com
CONTENTS
Breakthrough 1200V UniSiC™ Stack-Cascode MOSFETs
Alpha and Omega Semiconductor Limited (AOS), a designer, developer and global supplier of a broad range of power semiconductors,
and SemiSouth Laboratories jointly demonstrated UniSiC™, a revolutionary 1200V, 90mÙ MOSFET in a TO262 package, to meet the
growing need for energy efficient switching devices for high performance power conversion applications in the alternative energy, industrial and consumer segments. The dramatic reduction in form factor
and figures-of-merit put this 1200V MOSFET device in a class by
itself.
AOS continues to execute its strategy to be a full service power solution provider by extending its portfolio of AlphaMOS™ MOSFETs and
AlphaIGBT, devices with the revolutionary 1200V MOSFET solution
described in this brief.
The UniSiC™ MOSFET provides unprecedented low Rdson and gate
charge Qg, an excellent body diode with virtually no stored charge
and a low diode forward voltage drop. The device may be used similar to a conventional MOSFET or IGBT, with standard gate drives and
is engineered so it can be switched over a wide speed range – as
fast as a Superjunction MOSFET, or as slow as an IGBT. The device
has far superior characteristics compared to existing IGBTs, Silicon
power MOSFETs or even the best competitive SiC 1200V MOSFET.
Key data is summarized in Table 1 and Figure 1 shows the die sizes
of a 1200V IGBT with co-packaged diode, the 1200V competitor SiC
MOSFET and the AOS UniSiC™ stack-cascode device. The small
die size shows the tremendous potential this device creates for future
miniaturization of power circuits given how much it cuts conduction
and switching losses.
The UniSiC™ device is formed by stacking a specially designed low
voltage Silicon MOSFET atop a normally-on SiC JFET. The SiC JFET
has excellent characteristics and is provided by SemiSouth, the leading supplier of SiC JFET technology. The low voltage MOSFET is
specially engineered to allow optimal operation of the composite
device with clean switching, low Rdson, gate charge and superb
diode characteristics. It is intended to provide great ease of use,
working with standard drive circuitry, and drastically improving circuit
efficiencies over the whole range of load current.
www.aosmd.com
www.semisouth.com
International Conference on Power Electronics, Machines and Drives
27-29 March 2012. University of Bristol, UK
Conference highlights
3 over 250 presentations featuring the latest industrial and academic research on power electronics; machines
and drives; transportation; renewable energy systems; generation, transmission and distribution and
industrial applications
3 hear the views of leading keynote speakers Professor Frede Blaabjerg, Aalborg University and Gourab
Majumdar, Senior Chief Engineer, Mitsubishi Electric Corp.
3 meet Cobham, Infolytica, John G Peck, MDL Technologies, Motor Design Ltd, Opal RT Europe, Plexim,
PPM Power and TTP at the exhibition of key suppliers
Sponsor
Supported by
Media Partners
The Institution of Engineering and Technology is registered as a Charity in England & Wales (no 211014) and Scotland (no SCO38698).
The Institution of Engineering and Technology, Michael Faraday House, Six Hills Way, Stevenage, SG1 2AY.
See the full programme and register your place at www.theiet.org/pemd
www.bodospower.com
March 2012
Bodo´s Power Systems®
51
NEW PRODUCTS
Lowest Capacitance Silicon ESD Devices for High-Data-Rate Applications
TE Circuit Protection, a business unit of TE Connectivity, announces
a family of eight new single-channel and multi-channel silicon ESD
(SESD) protection devices offering the lowest capacitance (bi-directional: 0.10pF typical; uni-directional: 0.20pF typical), highest ESD
protection (20kV air and contact discharge) and smallest size (multichannel: smallest flow-through form-factor and 0.31mm height) packages available on the market.
The devices’ ultra-low-capacitance results in the industry’s lowest
insertion loss, which is essential for maintaining signal integrity in
ultra-high-speed applications. The devices help protect against damage caused by electrostatic discharge (ESD), surge and cable discharge events. The multi-channel devices also feature a flow-through
design package that allows for matched impedance of PCB trace
routing, which is essential for maintaining high-speed signal integrity.
The ultra-low-capacitance, small size and high ESD kV rating of the
SESD devices are well-suited for smart phones, HDTVs and similar
consumer, auto and other markets’ products using today’s – and
tomorrow’s – highest-speed interfaces such as USB 3.0/2.0, HDMI,
eSATA, DisplayPort, and Thunderbolt.
The single- and multi-channel SESD devices also feature an industryleading 20kV contact and air discharge rating, exceeding IEC61000-42’s 8kV industry standard. In the event of a high voltage ESD strike,
this high kV rating helps minimize the risk of the ESD device failing
short and permanently disabling the port, or open, exposing the downstream chipset to damage caused by another ESD strike. This capability helps reduce customer complaints and warranty repair costs.
www.te.com
FlatNoise™ Dual IF VGA for Multi-mode 4G Base Station Transceivers
Integrated Device Technology, Inc. delivering essential mixed-signal
semiconductor solutions, today announced the industry’s first FlatNoise dual intermediate frequency (IF) variable gain amplifier (VGA)
for multi-mode 2G/3G/4G wireless base station transceivers. IDT’s
devices offer the industry’s best noise figure (4 dB) for maximum gain
and virtually no degradation when gain is reduced, improving qualityof-service (QoS) and easing the signal-to-noise ratio (SNR) requirements of the downstream data converter to reduce system cost.
The IDT F1240 and F1241 are dual-channel digitally-controlled IF
VGAs featuring IDT’s FlatNoise technology. This new technology virtually eliminates noise figure degradation for the critical top 13 dB section of a wide 31 dB gain control range – a stark contrast to other IF
VGAs which typically exhibit a dB for dB degradation in noise figure as
gain is reduced. FlatNoise eases the SNR requirements of the system’s data converter, enabling customers to improve signal quality and
use a more cost-effective, lower-resolution data converter. For many
applications, this allows the customer to downgrade from a 14-bit data
converter to a 12-bit data converter with comparable system SNR.
www.idt.com/go/RF
52
Bodo´s Power Systems®
March 2012
www.bodospower.com
International Exhibition and Conference
for Power Electronics, Intelligent Motion, Power Quality
Nuremberg, 8 – 10 May 2012
Powerful?
…then you are right here!
The marketplace for developers and innovators.
Future starts here!
pcim-europe.com
Tutorials
Monday, 7 May 2012 from 9 – 17.00 hrs
International Conference and Exhibition
for Power Electronics, Intelligent Motion,
Renewable Energy and Energy Management
Nuremberg, 8 – 10 May 2012
www.pcim.de
Trends in Soft Switching Topologies
Dan Jitaru, Delta Energy Systems, USA
Advanced Design with MOSFET and
IGBT Power Modules
Tobias Reimann, ISLE Steuerungstechnik und
Leistungselektronik GmbH, Germany
Thomas Basler, Chemnitz University of Technology,
Germany
Controlling DC-DC Converters for Optimal
Performance
Richard Redl, ELFI S.A., Switzerland
Electromagnetic Design of High Frequency
Converters and Drives
Jacques Laeuffer, Dtalents, France
Conference, Seminar
and Tutorial Program
FPGA based Control of 2-level and 3-level Inverters
Jens Onno Krah, Cologne University of Applied
Sciences, Germany
Switching Power Supply Analysis
Ray Ridley, Ridley Engineering Europe, France
Battery Charging for Electric Vehicles
Dirk Uwe Sauer, RWTH Aachen, Germany
What attendees say
»An appointment with power electronics you can’t miss.«
Alberto Riboni, Technical Director, Silap Power
Management, Italy
»An appointment with power electronics you can’t miss.«
»PCIM gave
me Technical
a good overview
of Silap
the new
developments in
Alberto
Riboni,
Director,
Power
the area of power
Italyelectronics and semiconductor application,
Management,
and is a great place for networking.«
Ambra
FACTS,
Sweden
»PCIM Sannino,
gave me aR&D
goodManager,
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new developments
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the area of power electronics and semiconductor application,
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for my daily work.«
Andreas
Reiter,
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»The
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events toPower
learn
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Germany
about new technologies,
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»PCIM
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event where Manager
I can get fresh
AndreasisReiter,
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and technologies,
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discuss with the experts in the field and finally get some
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Henrik Lavric,see
Researcher,
University
of Ljubljana, Slovenia
information,
new products
and technologies,
discuss with the experts in the field and finally get some
new ideas for my work.«
Power Electronics for Renewable Energy Systems
Mike Meinhardt, SMA Solar Technology, Germany
Siegfried Heier, Peter Zacharias, University of Kassel,
Germany
IGBT Gate Drive Technologies
Reinhard Herzer, Arendt Wintrich, Semikron Elektronik,
Germany
High Frequency Conductor Losses in
Switchmode Magnetics
Bruce Carsten, Bruce Carsten Associates, USA
Reliability of IGBT Power Modules
Josef Lutz, Chemnitz University of Technology,
Germany
Seminars
Sunday, 6 May 2012 from 14 – 17.30 hrs
Batteries – Technologies, Charger Solutions,
Monitoring and Management Systems
Richard Redl, ELFI S.A., Switzerland
Basics of Electromagnetic Compatibility (EMC)
of Power Systems
Jacques Laeuffer, Dtalents, France
PCB Layout for Low EMI
Bruce Carsten, Bruce Carsten Associates, USA
PCIM Asia Exhibition and Conference
19 –21 June 2012, Shanghai, China
www.pcimasia.com
Frequency Response Measurements on Switching
Power Supplies and Components
Ray Ridley, Ridley Engineering Europe, France
The Easy and Straight Way to Successful
Presentation of Technical Content
Mike Meinhardt, SMA Solar Technology, Germany
PCIM South America Conference and Exhibition
11 – 13 September 2012, Sao Paulo, Brazil
www.pcim-southamerica.com
Wireless Power Technologies
Dan Jitaru, Delta Energy Systems, USA
Control of Micro Grids
Josep Maria Guerrero, Aalborg University, Denmark
Conference
Registration info
rmation and full
program
with all lectures
, posters and sp
eakers on
www.pcim-eur
ope.com/progr
am
Tuesday, 8 May 2012
Conference Opening and Award Ceremony
K EY NOTE »Electrical Power Sub-systems on Satellites«
Competition in
Wide Badgap Devices
Control of Converters
and Drivers
Advanced Silicon
Power Devices
Special Session
FPGAs in
Intelligent Motion I
High Performance Motors
and Electric Drives
Progress in Wide Bandgap
Technology
Converters for Wind/
Hydraulic Energies
Advanced Power Modules
Current Sensing
Power Quality Solutions
Poster/Dialogue Session
Wednesday, 9 May 2012
K EY NOTE »Solar Power«
Special Session
High Frequency Switching
Technologies & Devices
for Green Applications
AC/DC Converters
DC/DC Converters
New Photovoltaic Energy
Systems
Gate Drives
Reliability
Cooling
Power Electronics in
Automotive, Traction and
Aerospace
Energy Storage
Sensorless Drives
Poster/Dialogue Session
Thursday, 10 May 2012
K EY NOTE »Grid Integration of Renewables« (to be confirmed)
Special Session
E-Mobility and
Battery Chargers
High Power Converters
New Materials for
Power Electronics
Control Techniques in
Intelligent Motion Systems
New Wide Bandgap
Devices
Wire Bonds in
Power Modules
High Power Devices
Special Session FPGAs
in Intelligent Motion II
Our partners
Sponsors
Young Engineer Award
Why you should attend
PCIM Europe offers the unique opportunity to attend
high-quality conference presentations and to experience
the applications at the show floor within one event.
The Conference
experience the most application orientated
conference for power electronics
hear the leading experts presenting their latest
technologies
choose from more than 200 outstanding technical
presentations
benefit of plenty of networking opportunities and
establish new contacts
.
to 100 Euro
and save up
.
12
Book early
20
pril
ble until 3 A
ion
Rates availa
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Mediapartners
The Exhibition
get an overview on new technologies, innovations
and applications
see the largest power electronics exhibition
attend free panel-discussions and presentations at
the exhibition forum
The smthybridpackaging – systemintegration in
microelectronics exhibition and conference is held in
parallel to PCIM Europe. www.smt-exhibition.com
Contact
Mesago PCIM GmbH
Ms. Bianca Steinmetz
Rotebuehlstrasse 83–85, 70178 Stuttgart, Germany
Phone: +49 711 61946-29
Fax: +49 711 61946-90
www.pcim.de
pcim@mesago.com
Board of Management
Petra Haarburger, Johann Thoma, Udo Weller
Amtsgericht Stuttgart; HRB 720222
Best Paper Award
NEW PRODUCTS
SCOTTSDALE
S
OT
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CHiL Digital PWM Controllers
Delivers Smallest Footprint;
Highest Multiphase Efficiency
International Rectifier, IR® has launched its highly versatile family of
CHiL digital PWM controllers that dramatically shrinks footprint and
improves efficiency in a variety of mid-range to high-end and extreme
server, desktop, and computing applications. IR’s six new devices
meet Intel VR12 and VR12.5 and AMD SVI1 and SVI2 specifications,
and support multiphase designs from 1 to 8 phases operating 1 to 2
loops.
These third generation CHiL devices offer efficiency shaping features
such as phase shedding and variable gate drive with enhanced algorithms including PID scaling (when shedding phases) and phase current balancing to ensure maximum efficiency. The solution architecture supports the extremely high di/dt transients from high-end
processors, and, as a result of a new Adaptive Transient Algorithm
(ATA), the transients can be met with fewer phases and fewer capacitors to shrink system size.
Call For Papers INTELEC® 2012
September 30 - October 4, 2012
Talking Stick Resort and Conference Center
Scottsdale, Arizona
INTELEC©, International Telecommunications Energy Conference,
is the annual world-class technical forum that serves the broad
community of researchers, suppliers and operators, explores new
technologies of power conversion, energy storage and systems for
telecom applications and environment.
The conference program will include key note and plenary sessions,
technical presentations, workshops and poster sessions. Manuscripts
of accepted paper will be included in the conference proceedings.
Submit your 500 word to 1500 word digest on line by March 16, 2012 at
www.intelec.org/intelec2012 or http://submissions.miracd.com/intelec2012
For more information, visit us online at: www.intelec.org
The CHiL digital PWM controllers feature a 30 percent reduction in
operating current to help meet higher efficiency goals during low-load
operation. For protection of high-end circuits, the devices offer
improved pulse-by-pulse current limit protection, controlled pulse
width limiting a new phase imbalance/phase missing fault feature.
The devices fully support phase doubling using IR’s IR3598 to drive
two phases from each PWM output. The devices also sense 12V, 5V
and 3.3V supplies without special sequencing and feature PMBUS
telemetry.
www.irf.com
ADVERTISING INDEX
ABB Semi
Berquist
Cirrus
CT Concept Technologie
Danfoss
Electronicon
Fairchild
Fuji
GVA
Infineon
Intelec
International Rectifier
56
Bodo´s Power Systems®
C3
33
35
21
23
41
3
31
C2
13
56
C4
Intersil
IR
ITPR
IXYS
Lem
Magna Power
Mitsubishi
New Energy Husum
Omicron
PCIM
PEMD CFP
Pem UK
March 2012
11
C4
50
39
5
43
15
48
25
53-55
51
47
Powerex
Premo
Proton
Richardson
Rogers
Semikron
SMT
Summit
VDI
VMI
Würth
Yokogawa
19
49
27
17
1
29
46
7+9
37
49
47
45
www.bodospower.com
HiPak TM. Superior reliability in high power
IGBT packaging.
Perfect soldering is one of the major requirements in producing reliable modules with
high life expectancy. All ABB modules undergo intensive scrutiny including X-ray
analysis and acoustic microscopy to ensure highest quality. This is only one of many
process control steps towards operational excellence. For more information please
visit our webpage: www.abb.com/semiconductors
ABB Switzerland Ltd
ABB s.r.o.
www.abb.com/semiconductors
m.abb.com
Power and productivity
for a better world™
High-Voltage Buck Control ICs for
Constant LED Current Regulation
EMI Filter
Rectifier
IC and Switches
LEDs
Line
IC
IRPLLED7 Demo Board
IRPLLED7 Demo Board
LED Current vs Input Voltage
390
Current (mA)
380
370
360
340
LED Current (mA)
320
310
60
70
80
90
100
110
120
130
140
150
160
170
180
IRS2980
IRS2980 Benefits
s,OWCOMPONENTCOUNT
s/FFLINEOPERATION
s6ERYSIMPLEDESIGN
s)NHERENTSTABILITY
s)NHERENTSHORTCIRCUITPROTECTION
350
330
LEDrivIR™
IRS2980 Features
s)NTERNALHIGHVOLTAGEREGULATOR
s(YSTERETICCURRENTCONTROL
s(IGHSIDECURRENTSENSING
s07-DIMMINGWITHANALOGOR07CONTROLINPUT
s&REERUNNINGFREQUENCYWITHMAXIMUM
LIMITINGK(Z
Input Voltage
Part
Number
Package
Voltage
Gate
Drive Current
Startup
Current
Frequency
IRS2980S
SO-8
450V
+180 / -260 mA
<250 μA
<150 kHz
IRS25401S
SO-8
200V
+500 / -700 mA
<500 μA
<500 kHz
IRS25411S
SO-8
600V
+500 / -700 mA
<500 μA
<500 kHz
For more information call +49 (0) 6102 884 311
or visit us at www.irf.com
Demo Board Specifications
s)NPUT6OLTAGE6TO6!#
s/UTPUT6OLTAGE6TO6$#
s2EGULATED/UTPUT#URRENTM!
s0OWER&ACTOR
s,OWCOMPONENTCOUNT
s$IMMABLETO
s.ONISOLATED"UCKREGULATOR
THE POWER MANAGEMENT LEADER