ISSN: 1863-5598 Electronics in Motion and Conversion ZKZ 64717 03-12 March 2012 ACCELERATING YOUR PROJECTS Welcome to the House of Competence. GvA is your expert in individual problem solutions for all sectors of power electronics – state of the art know how and profound experience as an engineering service provider, manufacturer and distributor. Consulting – Design & Development – Production – Distribution GvA Leistungselektronik GmbH | Boehringer Straße 10 - 12 | D-68307 Mannheim Tel +49 (0) 621/7 89 92-0 | www.gva-leistungselektronik.de | info@gva-leistungselektronik.de Viewpoint The Next Show is right around the Corner . . . . . . . . . . . . . . . . . . . . 4 Events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 News . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-8 designhouse Blue Product of the Month Silicon Carbide Power Devices in Chip Form to Enable More Efficient Power Electronic Modules Cree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Green Product of the Month Current sensor controls high-speed electric motor Isabellenhütte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Guest Editorial The Augurs Promise Inspiration for Spring By Petra Haarburger, President, Mesago Messe Frankfurt . . . . . . 14 Market Electronics Industry Digest By Aubrey Dunford, Europartners . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Market DC Building Power Gains Momentum By Linnea Brush, Senior Analyst, Darnell . . . . . . . . . . . . . . . . . 18-19 Cover Story Searching for the Golden Fleece By Werner Bresch, GvA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-25 Communication Power Implementing “Green Power” in Telecom Architecture By Pietro Scalia, EMEA Power Marketing Manager for Telecom . . . . . . . . . . . . . 26-28 Lighting Spectral Tuning for White LED based Luminaries By Brian Johnson, Lighting Specialist, Fairchild . . . . . . . . . . . . 30-32 efficiency solutions by direct bond copper Magnetic Materials Advanced Ferrite Material for Photovoltaic Systems Based on material of TDK-EPCOS . . . . . . . . . . . . . . . . . . . . . . 34-36 IGBTs The Next Generation Chipset Technologies for Higher Operating Temperatures By A. Aydin, C. Corvasce, ABB Switzerland Ltd., Semiconductors . . . . . . . . . . . . . . . . . . . 38-41 High thermal conductivity Excellent for chip on board Optimized heat spreading C U RA M IK® D B C SUB S T R AT E New Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42-56 Highly integrated cooler Outstanding thermal performance Customized design C U RA M IK® D BC C O O L E R www.bodospower.com curamik electronics GmbH A division of Rogers Corporation Am Stadtwald 2 D-92676 Eschenbach Phone +49 9645 9222 0 info@curamik.com www.curamik.com www.rogerscorp.com/powerelectronics The Gallery 2 Bodo´s Power Systems® March 2012 www.bodospower.com Expansion n off Munich Technologyy Developmentt Centre e The extended focus comprises The newly formed R&D centre, located in Munich, provides Device and process simulation High Power Package development Technologists and Application experts for SuperJunction and Wide Bandgap Materials Automotive High Voltage Technical Marketing opportunities to new members to closely work with existing Packaging Development Engineer Device Simulation/Technology Experts Job description: Job description: You will be responsible to investigate new materials for the power semiconductor packaging, develop new packaging technologies and processes. You will define the design of new power semiconductor packages based on requirements from different applications in terms of functionality, quality and costs. Moreover you will support the assembly lines in the assessment and introduction of new assembly processes and equipment. Development and architectural innovation for Fairchild´s next generation High Voltage power devices including IGBT, SuperJunction FETs, SiC and GaN devices. You will be closely collaborating with teams in Sweden, US and Korea for process and package development. Job requirement: We are looking for highly innovative and self-motivated individuals with a Master or PhD degree in Microsystems Technology, Material Science or Physics. At least 4 years experiences in the design of power semiconductor packages are desired. Mechanical and thermal simulation skills, experience with 3D mechanical CAD experience is of advantage. global Fairchild Technologists in US, Sweden and Korea, as well as to work in partnerships with Research institutes and hand selected partnership programs with competitors. Job requirement: We are looking for highly innovative and self-motivated individuals, Master or PhD degree in Electrical engineering, Physics or similar. At least 3 years of professional experience required. Application and Marketing Manager, Silicon Carbide Technology Job description: HV Technical Product Marketing Manager Job description: Work with automotive OEM’s and suppliers to understand EV/HEV projects, requirements, and timing. Develop Fairchild product roadmaps for HV IGBT’s, MOSFET’s, Rectifiers, and Gate Drivers aligned with business strategy and opportunities and interface with Technology Development to coordinate technology roadmaps. Develop business cases for product developments and champion through the process. Launch new products, manage roll out and promotions to achieve objectives. Interface with automotive sales, providing product technical training and support. You will be adding value to the systems of our customers, and at the same time realize and enabling the true value of Fairchild´s SiC components. You are a strong driver and will develop yourself towards a leading role and towards truly technology based business and market development. Your knowledge of manifold approaches on power stage design impacts the rest of the system, e.g. cooling, control and filtering will enable novel power conversion designs to make use of the superior performances of our silicon carbide components. Job requirement: We are looking for innovative and self-motivated individuals, Master degree in Electrical Engineering, Physics or similar is a must, business background and Automotive experience is an advantage. At least 3 years of professional experience required. We are looking for highly innovative and self-motivated individuals with Master or PhD degree in Electrical engineering, Physics or similar. You have collected a solid background as power electronics designer in the power conversion industry and a deep understanding of power devices and converter systems. At least 5 years of professional experience required. The location of this role could be either Kista/Sweden or Munich/Germany. We offer: Contact: Job requirement: Start-up spirit in highly inspirational and expanding team in Munich; space for fundamental and scientific research; very competitive, performance oriented compensation schemes; high strategic impact and visibility within a global company. Klaus Billig Human Resources Manager Europe Einsteinring 28 85609 Munich/Dornach Tel.: +49 (0)172 8565 125 eMail.: klaus.billig@fairchildsemi.com VIEWPOINT A Media Katzbek 17a D-24235 Laboe, Germany Phone: +49 4343 42 17 90 Fax: +49 4343 42 17 89 editor@bodospower.com www.bodospower.com Publishing Editor Bodo Arlt, Dipl.-Ing. editor@bodospower.com Creative Direction & Production Repro Studio Peschke Repro.Peschke@t-online.de Free Subscription to qualified readers Bodo´s Power Systems is available for the following subscription charges: Annual charge (12 issues) is 150 € world wide Single issue is 18 € subscription@bodospower.com circulation print run 20 000 Printing by: Central-Druck Trost GmbH & Co Heusenstamm, Germany A Media and Bodos Power Systems assume and hereby disclaim any liability to any person for any loss or damage by errors or omissions in the material contained herein regardless of whether such errors result from negligence accident or any other cause whatsoever. Events Embedded world, Nuremberg, Germany, Feb 28th- March 1st www.embedded-world.de Cips, Nuremberg, Germany,March 6th-8th www.cips-conference.de New Energy Husum, Germany, March 15th-18th www.new-energy.de PEMD Bristol, UK, March 27th-29th www.theiet.org/pemd eCarTec Paris, France, April 3rd-5th www.ecartec.de expoelectronica, Moscow Russia, April 11th-13th http://expoelectronica.primexpo.com PCIM Europe, Nuremberg Germany, May 8th 10th www.mesago.de/de/PCIM SMT Hybrid, Nuremberg Germany, May 8th 10th www.mesago.de/de/SMT/home.htm Simulation in Automotive Lightweight, May 9th-10th /www.vdi.de/simulationlightweight 4 Bodo´s Power Systems® The Next Show is right around the Corner One show precedes the next. We attended a busy APEC Conference at Disney World. Progress in new materials was a highlight and will be covered in upcoming issues. Conferences this year of interest the power industry include the PCIM Europe in early May in Nuremberg, the PCIM Asia in June in Shanghai and EPE in September. In November, the bi-annual Electronica takes place in Munich and shortly thereafter, there’s the SPS/IPC/DRIVES in Nuremberg. These are a just a few of the extensive number of industry events which are continuously updated in my magazine, on the website and in the e-Newsletters. I’d like to thank my team at APEC who helped me meet my commitments while I suffered from a sudden bad cold. My friend Don Burke took on many of my editorial briefings and Stephen Reiss handled meetings with our advertisers. It is so good to see a team in action that works perfectly together. As a result, the magazine is growing faster than any other medium in the power electronics market segment, as a key customer commented, and includes contributed articles and adverts from all areas of the world. Communication is the only way to progress. We delivered twelve issues last year and will continue this year each month, on time, every time. So far this year we have published 188 pages and as a media partner, Bodo’s Power Systems is internationally positioned. The PCIM in Nuremberg is right around the corner in May. My Podium Discussion this year will be “Efficient DC/DC Conversion,” as always on Wednesday around lunchtime and at the back of Hall 12. Commitments from panel members are currently being finalized and I will be able to provide details in the next issue. Best regards March 2012 My Green Power Tip for March: Vacation in a moderate climate zone to avoid the need for heating or cooling. Not only will you save energy, but you’ll also reduce the risk of catching a nasty cold. www.bodospower.com Solar energy committed to a lifetime of safety and performance CTSR LEM commits to renewable energy sources of the future by enabling control and ensuring safety of today’s solar power solutions. CTSR transducers combine safety and performance, accurately measuring small AC and DC leakage currents. Easy installation for single or three phase residual current measurement: CTSR is today’s choice for the energy of tomorrow. t Two nominal current ranges: 0.3 and 0.6 ARMS t Printed circuit mounting t Large 20.1 mm diameter aperture t Available with primary inserted conductor t +5 V single supply t Up to 11 mm creepage and clearance distances + CTI 600 for high insulation t Low offset drift t –40 to +105° C operation t Reference Voltage access and control t Self-test and degauss t High overload capability: 3300 A www.lem.com At the heart of power electronics. NEWS ITU Approves G3-PLC as a New Worldwide Smart Grid Standard Maxim Integrated Products announces that its G3-PLC™ protocol has been approved by the International Telecommunications Union (ITU) as a new low-frequency, OFDM-based narrowband powerline communications (NBPLC) standard. In partnership with Electricité Réseau Distribution France (ERDF) and Sagemcom, Maxim developed the G3-PLC specification to promote open-endedness and interoperability among smart grid implementations. Currently, the G3-PLC is the only NB-PLC standard that supports the IPv6 internet pro- tocol to allow new internet-based energy management systems. The specification also optimizes bandwidth, corrects errors, and provides a higher data rate that supports two-way communication for demand response and other smart grid applications. The result is an increase in the performance reliability of crossing transformers, enabling a dramatic reduction in deployment costs. Last year, Maxim introduced the MAX2992, a PLC modem that pairs with the MAX2991 analog front-end (AFE) to provide the first fully compliant G3-PLC chipset solution. Today, several manufacturers offer ITU-compatible G3-PLC solutions based on this chipset, and one such solution is already being deployed in France. With the approval of G3-PLC as an international standard and with available solutions from multiple sources, utility companies can now plan their deployments utilizing G3-PLC to achieve cost-effective smart grid systems with confidence. . www.maxim-ic.com Next Generation of Products for the Smart Grid Market Texas Instruments Incorporated announced it has expanded its portfolio in utility metering, home and building automation and Smart Grid infrastructure with technology and tools that help developers create secure, economical and future-proof solutions for the Smart Grid. The world’s most accurate, flexible and robust energy metering ICs Demonstrating its commitment to advancing the efficiency of utility metering, TI recently introduced 24 new energy meter integrated circuits (ICs) that deliver industry-leading accuracy, flexibility, robustness and system cost savings for 1-phase, 2-phase and 3phase electricity meter solutions. The new MSP430F673x/F672x family of energy meter ICs combines the lowest power, most advanced metrology and clocking functionalities for high precision and robust electricity measurements design. The new energy meter ICs offer developers more flexibility in electricity metering and energy monitoring applications. www.ti.com/smartgrid Compatibility Partnership for Power MOSFETs Fairchild Semiconductor and Infineon Technologies announced the extension of their compatibility partnership to encompass Fairchild's 5x6mm power stage asymmetric dual MOSFET package. Fairchild’s PowerTrench® power stage dual asymmetric MOSFET modules are part of a comprehensive portfolio of advanced MOSFET technology that provides power designers with a wide range of solutions for mission critical high efficiency information processing designs. This extended collaboration which began in 2010 and is intended to provide customers supply chain security while balancing the drive towards best-in-class efficiency and thermal performance in DC-DC buck conversion. It takes advantage of the expertise both companies offer in asymmetric dual MOSFETs which can handle over 30A and increase power density. Fairchild Semiconductor is focused on developing, manufacturing and distributing semiconductor solutions to a wide range of end- market customers. Fairchild’s focus on the power market, along with diverse end- market exposure and strong penetration into the growing Asian region provide the company with an excellent opportunity to provide customers the right solution for their design challenges. www.fairchildsemi.com IEEE International Electric Vehicle Conference Program Brings Together World Experts To Advance Electric Vehicle Technology Advancing the adoption of electric vehicles and the power grid infrastructure needed to create more energy-efficient transportation systems will require developing and integrating diverse technologies, as well as adopting policies and standards needed to fully deploy these systems. To serve as a catalyst, the world’s leading technical professional association – IEEE – has organized the first technology conference solely dedicated to advancing these efforts in an interdisciplinary manner. Scheduled for March 4-8, 2012 at the TD Convention Center in Greenville, SC, the inaugural IEEE International Electric Vehicle Conference (IEVC) will provide a unique interdisciplinary forum for engineers, researchers, government officials and professionals from fields as diverse as electric utilities, semiconductors, battery technology, automotive engineering, computers and urban planning to come 6 Bodo´s Power Systems® together to discuss, debate and demonstrate noteworthy developments critical to making progress in this emerging area. The 2012 IEVC will facilitate the exchange of information on global trends in technology, engineering, standards and deployment among industrial, academic and regulatory thought-leaders for the rapidly emerging worldwide electric vehicle ecosystem. The conference technical program consists of presentations and poster sessions from leading experts in electric vehicle design and manufacturing, utility and infrastructure development, and component manufacturing. The complete conference program is available at: http://electricvehicle.ieee.org/program.html March 2012 www.ieee.org www.bodospower.com NEWS 5th Developer Forum Battery Technologies Karlstein (Germany), The 5th Entwicklerforum Akkutechnologien (Developer Forum Battery Technologies), hosted by the batteryuniversity.eu, takes place on April 18 and 19, 2012 in the "Stadthalle Aschaffenburg", Germany. Attendees are offered an extensive two-day congress program with nearly 30 presentations (mainly in German), two half-day fundamentals training courses on the subjects of battery technologies and battery management systems, and an exhibition with interesting products and technologies dealing with all aspects of battery cells and rechargeable batteries. The focus of this successful series of forums – in 2011, more than 550 attendees (interested users, developers and experts) participated in the Developer Forum and the accompanying workshops – is once again this year on the latest technologies, products and market trends presented by leading manufacturers of cells and charger ICs and internationally renowned institutions such as A123, Akku Power GmbH, Alfred Thun GmbH & Co. KG, Atmel Automotive GmbH, Batterien-Montage-Zentrum GmbH (BMZ), Deutsche Gesellschaft für Sonnenenergie e.V., Euro-Batterietechnik GmbH (EBT), European Recycling Platform (ERP) Deutschland GmbH, Fahrzeugakademie HWK, Fraunhofer Institut für Integrierte Schaltungen (IIS), Fraunhofer Institut für Silikatforschung (ISC), FSM Elektronik GmbH, Fachhochschule Aschaffenburg, Gleichmann Electronics, Helmholtz Institut Ulm (HIU), Karlsruher Institut für Technologie (KIT), Intertek Deutschland GmbH, Jauch Quartz Batteries, LG Chem Europe GmbH, Mack Electronic Systems, Maxell Europe Ltd., Maxim Integrated Products, MEC-Energietechnik GmbH, Omnitron Griese GmbH, Panasonic Electronic Devices, Panasonic Industrial Europe GmbH, RRC power solutions GmbH, Saft Batterien GmbH, SchulzElectronic Sony Europe Ltd., Texas Instruments, TEXSYS GmbH, TPW Prüfzentrum GmbH, VDE Prüf- und Zertifizierungsinstitut GmbH, velotech.de and werkstoffpruefung.de. The many different topics range from the most modern physical methods for battery analytics, the design and development of intelligent rechargeable battery systems, system questions regarding storage in renewable energy networks, flexible battery management systems for electric drives to the challenges regarding the safe implementation of safety tests of Li-ion batteries for electric vehicles. Dr. Jochen Mähliß, Manager of the batteryuniversity.eu: “Our explicit goal is to offer the broadest spectrum of information possible to battery developers and users. In just two days, we want to give attendees the opportunity to gather comprehensive information about the latest developments in battery technologies from experts in many different fields. I believe that with our selection of topics we will once again fully meet the expectations in 2012. It is not surprising that within only four years the Developer Forum Battery Technologies has established itself as the most important meeting place for the mobile electricity supply industry in Europe.” Furthermore, the conference is accompanied by an exhibition,, which is open both days from 8:00 AM to 6:30 PM, where attendees have the unique opportunity to get detailed information and advice from the experts of Sony Europe, Panasonic, LG Chem Europe, Saft Batterien and others about their latest products and technologies. The attendance fee for the 5th Entwicklerforum Akkutechnologien including breakfast, lunch and coffee buffets, after-show snacks and all forum documentation is 650 EUR plus 19% MwSt. (German Value Added Tax) per person. The fee for a one-day attendance is 350 EUR plus 19% MwSt. per person. The detailed program of events and registration form can be downloaded from the homepage www.batteryuniversity.eu or requested by sending an email with the subject line "Entwicklerforum Akkutechnologien" to forum@batteryuniversity.eu. batteryuniversity.eu Industry’s First Application-focused Gallium Nitride (GaN) Transistors Textbook Power Conversion Corporation (www.epcco.com) announces the publication of a textbook designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors. This practical guide provides guidance on the use of GaN transistors in widely used power electronics applications, ranging from buck converters to Power over Ethernet. Also included are discussions on fundamental power engineering subjects such as; performance characteristics of GaN transistors, layout considerations for GaN circuits, paralleling GaN transistors and driver IC requirements for GaN transistors. The final chapters address GaN device reliability, their exceptional radiation-resistant characteristics as well as their future in power electronics. 8 Bodo´s Power Systems® According to Alex Lidow, Efficient Power Conversion CEO and coauthor of this book, “Gallium nitride transistors provide a long-awaited displacement technology for MOSFETs, and much has been learned over the past several years about how to apply this new technology. In addition to increasing the efficiency of today’s power conversion systems, GaN transistors open up new applications such as RF envelope tracking and wireless power transmission that are much needed to keep pace with the ever-expanding communications industry and battery operated products. These new applications are enabled by the high frequency switching capability combined with the high voltage and high power capabilities of gallium nitride FETs.” “GaN Transistors for Efficient Power Conversion” is available for $39.95 and can be purchased from the EPC website (www.epcco.com), Digi-Key (www.digikey.com) or Amazon (www.amazon.com). March 2012 www.epc-co.com www.bodospower.com BLUE PRODUCT OF THE MONTH Silicon Carbide Power Devices in Chip Form to Enable More Efficient Power Electronic Modules Availability of Fully Qualified Silicon Carbide MOSFET Chips Can Create New Opportunities for Energy Efficiency in Solar, Telecom, Industrial Power Applications. Cree, Inc., a market leader in silicon carbide (SiC) power devices, continues to advance the revolution in high-efficiency power electronics with the release of the industry’s first fully qualified SiC MOSFET power devices in “bare die” or chip form for use in power electronics modules. Cree’s SiC Z-FET™ MOSFETs and Z-Ree™ diodes are used in advanced power electronics circuits to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices. “Power module manufacturers can combine Cree’s 1200V SiC power MOSFET and Schottky diodes in chip form to create an ‘all-silicon carbide’ module design for ultra-high-efficiency power electronics systems,” continued Balkas. “These new modules provide the proven benefits of silicon carbide—zero reverse recovery losses, temperature-independent switching, higher frequency operation with low electromagnetic interference (EMI), and significantly higher avalanche capability – and deliver switching frequencies that are five to eight times higher compared to conventional silicon solutions. The higher switching frequencies enable smaller magnetic and capacitive elements, thereby shrinking overall system size, weight and cost.” The new Cree power MOSFET devices are initially available in two versions: the CPMF-1200-S080B measures 4.08mm x 4.08mm and is rated at 1200V/20A with a nominal on-resistance (RDS(on)) of 80mΩ; and the CPMF-1200-S160B measures 3.1mm x 3.1mm and is rated at 1200V/10A with a nominal on-resistance (RDS(on)) of 160mΩ. Operating junction temperature for both devices is rated at -55°C to +150°C. Power modules typically combine a number of discrete power switching devices – MOSFETs and diodes – in a single integrated package for high-voltage power electronics applications such as three-phase industrial power supplies, telecom power systems and power inverters for solar and wind energy systems. In traditional MOSFET packaging technologies, the parasitic inductance of the long leads can limit the switching capability of SiC MOSFETs. By offering Cree customers bare die alternatives, circuit designers can now take full advantage of the switching performance of SiC technology by reducing the effects of the package-parasitic inductance. “With the availability of fully qualified SiC MOSFETs as unpackaged chips, manufacturers of power modules can realize the performance advantages of SiC devices—better high temperature operation, higher switching frequencies and lower switching losses – without the limitations imposed by conventional plastic packaging of discrete devices,” explained Cengiz Balkas, Cree vice president and general manager, power and RF. “The design advantages of implementing SiC power devices in power electronic modules include the ability to achieve higher current and voltage ratings with fewer components, which in turn can enable maximum power density and increased reliability.” 10 Bodo´s Power Systems® The two versions of the 1200V MOSFET die are fully qualified and released for production use and available to Cree’s customers, as well as through Cree’s Power die distributor Semi Dice. Cree has published specifications and detailed design guidelines, including recommendations on die attach and bonding, to assist power module manufacturers in the use of the new devices and optimizing their designs. In addition, Cree is pleased to offer customers the availability of a SiC MOSFET Spice Model created to help with early simulation and evaluation. The Cree model can be downloaded at: www.cree.com/power/mosfet_model_req.asp For samples and more information about Cree’s SiC power devices, please visit: www.cree.com/power Cree has been a recognized leader in SiC MOSFET process and design development for more than 20 years and has been awarded more than 50 patents related to SiC MOSFET technologies, with numerous patents pending. About Cree Cree is a market-leading innovator of semiconductor products for power and radiofrequency (RF) applications, lighting-class LEDs, and LED lighting solutions. Cree's product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and solar inverters. March 2012 www.cree.com www.bodospower.com GREEN PRODUCT OF THE MONTH Current Sensor Controls High-Speed Electric Motor Isabellenhütte provides Formula 1 teams with controlled means of acceleration. Nine top teams are using the IVT-F current sensor made by Isabellenhütte Heusler GmbH & Co. KG, Hesse, Germany, during the 2012 Formula 1 season, which will start on March 18th in Melbourne, Australia. The module has been integrated in the socalled E-KER systems: E-KERS is an Electric Kinetic Energy Recovery System that was used for the first time in 2009 and which was integrated in Formula 1 cars again for the 2011 season. just two months to develop the modules and they are specifically designed for use in Formula 1. Isabellenhütte’s measurement segment aims to cement its position as technological leader in the field of shunt-based current measurement with these products. Jens Hartmann, Sales Director Measurement at Isabellenhütte Heusler GmbH & Co. KG comments: “We are already working on sensors for the 2013 and 2014 Formula 1 seasons.” IVT-F technical data • Three-channel measuring system for current, voltage and temperature (I,U,T) • Internal sample rate: 3.5 KHz • Fixed calculation of mean value over 16 sampling values • U/I with input filter cut-off frequency of fg=350Hz • 500 Hz measured value output • CAN-Bus with 1 MBit data rate • Operating life: minimum 2,000 km E-KERS forms part of the power transmission of F1 cars. It converts kinetic energy won during the breaking process into electricity with the help of an electric motor that also performs as a generator. This power is stored in lithium-ion batteries and fed back into an electric motor in strictly regulated quantities, which in turn boosts the Formula 1 car’s combustion engine during acceleration periods. Isabellenhütte’s IVT-F integrated current sensor controls the quantity of power supplied by the E-KERS. The Formula 1 umbrella organisation FIA (Fédération Internationale de l’Automobile) aims to ensure in this way that the racing teams will not use E-KERS to break the rules. It took 12 Bodo´s Power Systems® Isabellenhütte Heusler GmbH & Co. KG is a leader in the field of shunt-based current measurement technology. The company has combined its precision measuring systems under the new brand name ISAscale®. The company has been owned by the Heusler family since 1827. Around 650 staff are employed at its headquarters and production site in Dillenburg, Hesse. March 2012 www.isabellenhuette.de www.bodospower.com EconoPACK™ 4 The world standard for 3-level applications The EconoPACK™ 4 is an optimized module for 3-level applications like I Uninterruptible Power Supply I Solar Inverter I High Speed Drives where a robust design, high efficiency and less harmonics are needed. For these applications starting with 50 kW up to 125 kW, the EconoPACK™ 4 can be used to build up one phase. For higher power ratings modules can be switched in parallel. All modules are equipped with the state-of-the-art IGBT4. Further information are available on request. The degree of efficiency for the two 3-level topologies, NPC1 and NPC2, has to be evaluated depending on the switching frequency. I EconoPACK™ 4 NPC2 topology for low and medium switching frequencies (approx. fsw< 12 kHz) I EconoPACK™ 4 NPC1 topology for high switching frequencies (approx. fsw≥12 kHz) NPC1 topology I 650V IGBT4 I Optimized for fsw≥12 kHz I Portfolio · F3L200R07PE4 · F3L300R07PE4 [www.infineon.com/highpower] NPC2 topology I I I I 650V/650V IGBT4 650V/1200V IGBT4 Optimized for fsw<12 kHz Portfolio · F3L400R07PE4_B26 · F3L300R12PT4_B26 · F3L400R12PT4_B26 GUEST EDITORIAL The Augurs Promise Inspiration for Spring By Petra Haarburger, President, Mesago Messe Frankfurt In ancient Rome there were officials, who told the future by examining bird flight. During the reign of Gaius Julius Caesar, without doubt one of the most fascinating characters of the ancient world, there were 16 of these soothsayers, or augurs, in the pay of Rome. Just imagine that the decisions taken today by the world’s powers would depend on these authorities. Agreeing the Eurozone bailout fund? Let’s see what the crows would say to that. Using economic sanctions against one or more countries? What is the view of the geese? It is possible that every now and then decisions are made that are not purely based on rational consideration. After all those in charge are only human, but in fact magic has, after all, crept into the far corners of our world. But what has it brought us? The augurs of today are called “teams of experts”, “subsistence strategies”, “rating agencies” and “political advisers”. Their entire expensive know-how has not fundamentally transformed their ability to predict the future. Who in 2008 would have guessed that the insolvency of an investment bank just one year later would bring the economic world to its knees? Who would have believed that the economy would recover so quickly in 2009? Who, in 2010, really took seriously the difficulties emerging for some of the Euro states? Who would have believed until well into 2011, the year of hope,that the power of a global financial tsunami was just waiting to be unleashed? Difficile est saturam non scribere (it’s hard not to write a satire about it, Juvenal, 2nd century AD). What can we learn from this? One thing is for sure: we must take into account insecurity concerning external conditions in our planning for the future. Best and worst case scenarios will influence decision-making more than in the past. Best and worst case scenarios usually result from the influence of external factors on what we do. We are at their mercy – to a greater or lesser extent. The world around us is unpredictable, which is exactly why we should optimize our performance constantly. If we are doing our best, we will benefit from a tailwind and we’ll be able to more robustly withstand a head 14 Bodo´s Power Systems® wind. This is true for individuals as well as groups; for companies as well as whole countries. These days, knowledge forms the basis of our achievements. Knowledge is the most valuable resource of the 21st century. Never before in the history of man has knowledge been so available. But neither has it also dated so quickly and this is particularly true in the engineering sciences. If an engineer wants to continue to work with some credibility, he can only do that if he keeps his knowledge up to date. And that’s a real challenge. It’s also important that his knowledge should not remain theoretical as it becomes only really meaningful when it’s put into practice. This is true for the development engineer as well as the beneficiaries of his labours. There is a direct connection between the availability of knowledge and the pace of progress. The more people that can achieve the current knowledge base, the greater this is likely to grow. In the past two decades the internet has accelerated this process considerably. Whereas in pre-internet times someone thirsty for knowledge had to laboriously find his way to the source, these days the information flows directly his way pretty much wherever he is in the world. So not only has the internet increased access to knowledge it has also influenced how it develops. A great variety of disciplines have developed internet platforms where experts can exchange ideas resulting in the emergence of virtual communities - highly effective knowledge generators. Is it a perfect world? It certainly offers many advantages: for example it doesn’t release CO² emissions; it’s relatively low priced and it saves time. If that was all it was, it would March 2012 remain, by and large, virtual and would have little impact in real life. Humans are social beings with highly intelligent senses. The success of homo sapiens as a species lies in its ability to link intellectual stimulation with the senses, and vice versa. But being able to stimulate the senses is not exactly the strongest point of the internet; whilst it delivers an excessive amount of data, it cannot deliver the inspiration to match. “Where do I find that?” asks the modern person optimally equipped with the tablet PC and smartphone. Amazingly, often in the form of human communication which has existed in basic form for thousands of years: at exhibitions and conferences, where people with similar interests gather in one place for a limited time. It is here that a quite special spirit can be found which only emerges when people meet face to face in the real world. So are exhibitions and conferences competing with the internet? As President of a company specialized in organising technology exhibitions and conferences I can say that for a long time the internet was the bête noir of our branch. With the competence of the Roman augurs, many futurologists predicted our demise. Only virtual exhibitions, at best, would, survive. Today it is our experience that the internet increasingly complements who we are; it can even hone the profile of our exhibitions and conferences. These days the visitors come to our events already highly informed and take from conference speakers and trade specialists on the stands knowledge which can only be gained through speaking with one another. Ideas often arise during these conversations, and solutions are found which no-one had previously considered. That is the spirit which is only to be found at an exhibition or conference. I’d like to close by slipping into the role of augur myself. Should you visit SMT Hybrid Packaging 2012 or PCIM Europe 2012 in May, you will find exactly that spirit in Nuremberg. I am absolutely convinced of the truth of my prognosis. www.mesago.com www.bodospower.com Renewables World's Most Powerful 1700V Dual IGBT Module for High Power Energy Conversion s: Please visit u , PCIM 2012 d 421 Hall 12, Stan semis.info@meg.mee.com · www.mitsubishichips.eu MARKET ELECTRONICS INDUSTRY DIGEST By Aubrey Dunford, Europartners GENERAL Top 10 0riginal Equipment Manufacturers accounted for $ 105.6 billion of semiconductors on a design total available market basis in 2011 — 35 percent of semiconductor vendors’ worldwide chip revenue, so Gartner. This represented a year-over-year increase of 1.8 percent from 2010. SEMICONDUCTORS Global sales of semiconductor grew for the second consecutive year following the 2009 downturn, reaching a record of $ 299.5 billion in 2011, so the WSTS. This represents an increase of 0.4 percent compared to 2010. In 2011, total discrete, opto & sensors grew by 8.3 percent and MOS microprocessors grew by 7.5 percent compared to 2010. STMicroelectronics net revenues for the full year 2011 decreased 5.9 percent to $ 9.73 billion from $ 10.35 billion in the prior year reflecting weak market conditions, particularly in the second half of the year. MagnaChip Semiconductor, a Korea-based manufacturer of analog and mixed-signal semiconductor products for high volume consumer applications, will acquire Dawin Electronics, a Korean company that designs and manufactures IGBTs, Fast Recovery Diode (FRD) and MOSFET modules. Terms of the deal were not disclosed. The total IGBT market in 2011 was estimated to be $4.1 billion and is expected to grow at a CAGR of 10 percent from 2011 to 2015, so IHS iSuppli. Maxim Integrated Products has acquired Genasic Design Systems (Riseley, England), a fabless IC company founded in 2009 with 16 Bodo´s Power Systems® a specific focus on designing RFIC’s for mobile communications systems, for an undisclosed amount. For fiscal 2011, Maxim, which makes analog and mixed-signal semiconductors, reported revenue of approximately $ 2.5 billion. $ 2.3 billion. Its main business is the manufacture of low-voltage and ultralow-voltage electrical products such as connectors, conduits and fittings as well as wiring management products for the construction, industrial and utilities markets. Soitec, a French supplier of semiconductor materials for the electronics and energy industries, and Sumitomo Electric Industries, a Japanese provider of compound semiconductor materials, have reached a major milestone in their strategic joint development program started in December 2010 by demonstrating four- and six-inch engineered GaN substrates and launching pilot production lines to enable wider market adoption. These substrates -produced by transferring ultra-thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates -are suited for manufacturing advanced high-brightness lightemitting diodes (LEDs) for the lighting market and power-efficient controllers for the electric vehicles and energy markets. Teseq, a Swiss developer and provider of instrumentation and systems for EMC emission and immunity testing, has acquired UKbased Milmega, a specialist of solid state, high-power microwave and RF amplifiers. The acquisition strengthens Teseq capabilities in commercial, industrial, automotive, military and communications applications, further positioning the company as a global leader in immunity testing. Established in 1987, Milmega designs and manufactures high power amplifiers for commercial and government applications. OPTOELECTRONICS Corning and Samsung Mobile Display have signed an agreement to establish a new equity venture for the manufacture of specialty glass substrates for the rapidly expanding organic light emitting diode (OLED) device market. The new business will be located in Korea and will supply OLED backplane glass substrates for Samsung Mobile Display, as well as for the broader Korean market. PASSIVE COMPONENTS TE Connectivity announced a second-source agreement under which Molex will have the rights to manufacture, market and sell TE’s latest Strada Whisper high-speed backplane connector family. OTHER COMPONENTS ABB, the Swiss power and automation technology group, will acquire Thomas & Betts, a North American supplier in low voltage products, for approximately $ 3.9 billion. The combined product portfolio and enhanced distribution network will enable ABB to double its addressable market in North America to approximately $ 24 billion. Thomas & Betts employs approximately 9,400 people and is estimated to report 2011 revenues of March 2012 DISTRIBUTION Arrow Electronics reported fourth-quarter 2011 net income of $ 174.1 M on sales of $ 5.44 billion, compared with net income of $ 157.9 M on sales of $ 5.24 billion in the fourth quarter of 2010. Global components fourthquarter sales of $ 3.44 billion increased 3 percent year over year. Global enterprise computing solutions fourth-quarter sales of $ 2.0 billion increased 5 percent year over year. Arrow’s net income for 2011 was $ 598.8 M on sales of $ 21.39 billion, compared with net income of $ 479.6 M on sales of $18.74 billion in 2010. Arrow Electronics also announced that Brian McNally has been named president of specialty businesses within the company’s Global Components segment. Mr. McNally will focus on expanding the offerings and accelerating growth for this newly formed business group, including A.E. Petsche, Richardson RFPD and Nu Horizons Electronics. Mr. McNally served as president of Arrow’s Europe, Middle East and Africa Components business from 2008 to 2011. This is the comprehensive power related extract from the « Electronics Industry Digest », the successor of The Lennox Report. For a full subscription of the report contact: eid@europartners.eu.com or by fax 44/1494 563503. www.europartners.eu.com www.bodospower.com MARKET DC Building Power Gains Momentum By Linnea Brush, Senior Research Analyst, Darnell Dc building power is poised to challenge a very fundamental paradigm of traditional building power architectures – namely, ac powering. Ac building power has been the mainstay of almost all commercial, industrial and residential facilities for decades. Even telecommunications gear – most of which is dc-powered – has incorporated acpowered data communications equipment into their facilities. Migrating these buildings into dc-powered facilities will alter how new and existing buildings are designed and operated. They will not replace ac-powered buildings, and in some cases, they could end up as “hybrid” facilities. In any of these scenarios, however, new opportunities will open up for original equipment manufacturers and power component makers. Some of these opportunities differ from the traditional markets that companies have pursued in the past. For example, sales of connectors, lighting fixtures, power distribution units (PDUs), and energy storage devices will be needed for data centers, telecommunications central offices, commercial and industrial facilities, and residential buildings. Since the “first wave” of these installations is currently taking place, the evolution from ac to dc building power will likely highlight the areas where standards, safety considerations and delivery systems will require new equipment designs. Despite the challenges, the addition of dc power systems offers the potential for improvements in energy efficiency, reliability, power quality and cost of operation, compared to traditional ac power systems. Dc power distribution could also help overcome constraints in the development of new transmission capacity that is beginning to impact these industries. As an emerging technology, it is important to identify the most promising types of facilities that could benefit from an original dc power building design (or a conversion to such a design). Two areas of immediate opportunity for the adoption of dc power are data centers and commercial/industrial facilities. These types of buildings have the advantages of strong standards activity, supporting government regulations, and a number of demonstration facilities. In addition, a small but growing number of products have been developed by companies like Delta Electronics, Emerson Network Power, and Nextek Power Systems. The market drivers for the telecom industry are different. Telecom central offices are already dc facilities, but the technological, regulatory and economic factors needed for them to adopt a higher voltage dc architecture are not as clear-cut. Telcom is a very entrenched industry that tends to resist change. “Ac loads” are part of their existing dc architecture, but data communications equipment has altered the “balance of power” to more of these loads in central offices. To address this issue, the European Telecommunications Standards Institute (ETSI) developed a standard that was based on a similar effort from the Environmental Research Institute (EPRI) and the 18 Bodo´s Power Systems® EMerge Alliance. The EN 300-132-3 standard calls for equipment to be powered by either high-voltage ac, single- or three-phase rectified ac, or dc current. The adoption of this standard is expected to address the problem of compatibility between the power supply equipment and both datacom/telecom equipment, and to the different load units connected to the same interface. The residential dc industry is in a much earlier stage of development than the other building types. One of the major forces that could drive adoption of dc power in residences is the expansion of zero net energy (ZNE) facilities. These are buildings that only consume as much energy as they produce, through on-site and renewable energy systems. A ZNE building could significantly cut dependence on fossilbased energy and supply the required energy through on-site distributed generation, such as solar, wind, fuel cells, or microturbines. The trend towards ZNE housing is just one of the forces that could drive the residential market. At the lower power levels, the EMerge Alliance has concentrated on the development of a 24Vdc standard for commercial, industrial and residential buildings. The EMerge Alliance Standard 1.0 regarding 24Vdc power creates an integrated, open platform for power, interior infrastructures, controls and a wide variety of peripheral devices to facilitate the hybrid use of ac and dc power within buildings. Dc microgrids are gaining traction as other emerging technologies become more established, as well. A number of companies, including Nextek Power Systems, are already offering products to support dc microgrids. A system that allows the delivery of dc power to a microgrid can provide reliability and power quality to the facility. In addition, as renewable energy technologies such as solar PV become more widespread, the development and use of a dc microgrid could evolve into a cheaper and more efficient alternative. A possible course of action is to install a dc network linking dc devices to dc power supplies. The development of power products that work in a dc power environment is critical to the further expansion of dc powering in buildings. Although power supplies and components for data centers are currently designed specifically for demonstration facilities and not widely available as standard products, a number of prominent companies are starting to see the potential of introducing dc power to data center facilities. Delta Electronics recently launched a state-of-the-art data center dc power solution that includes a complete product portfolio of dc UPS systems, PDUs, and server power supplies for more energy-efficient data center applications. Additional factors contributing to the advancement of dc power include the large consumer electronics market, which operates exclusively on dc power and currently requires conversion from ac sources. These devices are common in every household and include televisions, set-top boxes and many others. In aggregate, the millions March 2012 www.bodospower.com MARKET of conversions performed for the operation of these electronic devices extract a huge loss in energy during conversion and therefore represent a long-term opportunity. The adoption of dc building power is global, with developments occurring in Europe, North America and Asia. For instance, a recent dc power standard in China mandates that all telecommunications facilities and data centers adopt 240Vdc power. The retrofits will not involve any change in the existing 230Vac power supplies – the supply voltage will simply be switched to 240Vdc, saving a few percentage points of energy consumption. This is a near-term “bandage” to gain small but immediate efficiency improvements, but it is expected that in the longer-term, China will also adopt the 380/400Vdc standards being developed in other parts of the globe. The market for products used in dc building installations is currently small, consisting primarily of custom-designed deployments. Future opportunities are expected to be extensive, however. Many companies are capable of manufacturing these products as the markets evolve, even if they do not do so now. For example, dc-dc converters are not yet available for direct-dc building applications; but many of www.bodospower.com the high-power dc-dc converters currently designed for harsh environments (which are available for marine, industrial and military applications that involve stresses, vibrations and humidity) have similar characteristics needed for direct-dc power facilities. Although dc building power is still emerging, it is already providing opportunities for power supplies in a number of industries and applications. Darnell’s report on “DC Building Power: Emerging Trends, Application Drivers, Market Opportunities, Adoption Rates and Forecasts” includes over 30 figures depicting a variety of power system schematics and comparisons, architectural standards, efficiency standards and other developments driving the market. The focus of this comprehensive analysis provides decision makers with an insightful look into the current and future opportunities and threats available in the dc building power supply market. DC Building Power: Emerging Trends, Application Drivers, Market Opportunities, Adoption Rates and Forecasts March 2012 www.darnell.com/dcbp/ Bodo´s Power Systems® 19 COVER STORY Searching for the Golden Fleece By Werner Bresch. GvA In the middle of January, I received a „call for help“ from Bodo Arlt, who said that the author of the cover story for the March 2012 issue had deserted him. He asked me whether I might be able to help out. I would love to have written a fulsome and detailed technical article, for example writing about the developments for medium-voltage applications with bipolar and with BiMos semiconductors on which we are currently working. But to do this you need more time than the deadline for submitting the script allowed. So a discussion took place in which we jointly concluded that in our power electronics sector there is a lack of up-and-coming talent and this may have a very negative impact on technical expertise, economic growth and also social peace and harmony in our world. We also considered why it is not proving possible to inspire more talented young people to pursue a career in power electronics. One of the reasons may be that we „oldies“ do not communicate in sufficiently vivid terms what makes power electronics so fascinating! bound to be a big bang. Yes, this can happen, we then reply, but first comes the flash and then the bang and finally parts start flying around. This is what is known as a learning curve! This is usually the point at which most applicants raise the white flag and give up. They say that all this involves too little electronics and too much mechanics and after all a high-tech job at a computer involving software development, for example, is much more interesting. By contrast, our field of work represents an archaic sledgehammer approach to doing things and is not very sexy. And at first glance this statement does actually appear to have some truth to it. However, if you take a second look, unimagined opportunities are opening up with extraordinarily diverse career prospects in this field of power electronics. Set theory I now find myself in the „late autumn“ of my extremely interesting and varied working life. When I look back, I can only emphasise that I have never got bored in my domain. The work and assignments I have tackled have contributed a lot to my professional and personal development and given me a great deal of satisfaction. Over the years, I have developed my own „personal set theory“ on this. In my view, to ensure that you can develop as a person in your work and deliver good results, you need the largest possible „cross section“ which is made up of three „subsets“. I define subset 1 as being satisfaction with the assignment resulting from the challenge presented by the assignment you are given. In this regard, a role in the field of power electronics is hard to beat in terms of variety and diversity. The first step is always the hardest! Every month Bodo publishes its Power Systems and this means that every month „The Gallery“ appears on the first pages. I have now also been added there and a picture appears alongside my name. I must concede that I fit in well here, in the line-up of gentlemen with greying temples and sometimes slightly thinning hair. By contrast, you find far too few women and also far too few young men. This sheds a significant light on the next generation of talent in our industry. When we interview graduates fresh out of universities of applied sciences and technical universities as potential applicants to join our development department, the interviews usually progress very well up to the point at which we start talking about our job profile. While we enthusiastically explain to applicants that we deliver customerspecific power electronics developments up to the high MW range and also work with kiloamperes and kilovolts, the applicants’ eyes light up and they look at us in amazement, incredulously and quizzically. The whole electronic equipment really is on a large scale with thick copper rails and this would certainly not fit on the laboratory bench, they then often ask. The whole thing really does make a racket and also makes other noises and, in the event of a fault, there is 20 Bodo´s Power Systems® I define subset 2 as satisfaction with the working environment. Here too power electronics offers exceptional opportunities for professional and personal development. Last but not least comes subset 3. This relates to aspects such as payment, career opportunities and future prospects working in the field of power electronics. Here too it should be stated that the prospects for the aspects mentioned above are better than excellent. Even if individual subsets diverge from the cross-sectional optimum, in my case at least (and this is also true of many others I have met) I have never turned my back on power electronics. On the contrary. This field of study is so interesting, varied, diverse and exciting that it is almost as addictive as a drug. Once you have experienced one dose of it, you can never get away from it. I therefore declare myself guilty as charged! Yes, I am addicted! Addicted to power, addicted to power electronics! Subset 1, playground for technology geeks Some details about the terms of reference, challenge and diversity of the job were discussed earlier on. But what actually lies behind this can at best only be touched upon. January March 2012 2012 www.bodospower.com Taming the Beast New 3.3kV SCALE-2 IGBT Driver Core 2SC0535T2A0-33 The new dual-channel IGBT driver core 2SC0535T for high voltage IGBT modules eases the design of high power inverters. Using this highly integrated device design cycle and reduces the engineering risk. Beside the cost advantage resulting from the SCALE-2 ASIC interfaces. The driver is equipped with a transformer technology to operate from -55°..+85°C with its full performance and no derating. All important traction SAMPLES AVAILABLE! CT-Concept Technologie AG, Renferstrasse 15, CH-2504 Biel, Switzerland, Phone +41-32-344 47 47 Features Highly integrated dual channel IGBT driver 2-level and multilevel topologies !!""# Operating temperature -55..+85°C <100ns delay time ±4ns jitter ±35A gate current Isolated DC/DC converter $ %& ' Regulated gate-emitter voltage Supply under-voltage lockout Short-circuit protection ( Meets EN50124 and IEC60077 UL compliant 75 USD @ 1000 pieces www.IGBT-Driver.com COVER STORY First of all, it should be clearly recognised that power electronics is not just confined to drive technology. Although drive technology itself is certainly very multifaceted. For example, there are DC drives with thyristor bridges, AC drives, in two-pulse inverters, three-pulse inverters, multilevel inverter circuit topologies. Power ranges of from 10s of watts up to hundreds of megawatts are achieved with these components. For example, we find power electronics as pulse-power switches in research facilities in kicker pulsers, in process facilities for metal processing and metal shaping in the multi-digit kV and kA range. We find power electronics as high-current rectifiers in electroplating facilities and welding facilities as well as high-voltage rectifiers in the range of several 100kV, e.g. in research facilities. Power electronics are used for power generation and distribution. Wind turbines, photovoltaics, and h.v.d.c. transmission are mentioned here by way of example. Power electronics are used to improve the grid conditions in the form of thyristor power circuit-breakers for group compensation or also inverters in 2-pulse and 3-pulse configurations for active filters. Power electronics can be found in facilities for inductive welding, melting and hardening. Traction feed rectifiers, auxiliary generator sets, network interconnections, ripple control transmitters, UPS facili- cific operating behaviour, and lifetime considerations and ambient conditions are also incorporated into this process. The interfaces for the control electronics, the main electrical connections, connections for liquid cooling for example and mechanical interfaces must be defined as clearly as possible. In addition, requirements from sets of rules such as the DIN IEC must be considered. This is all taken into account in a specification which reflects the requirements placed on the power electronics and describes them as completely and comprehensively as possible. We can now start with the development. The interesting thing about this is that we are confronted with lots of interdisciplinary problems which need to be solved in order to develop reliable power electronics. The suitable power semiconductor is quickly picked out and specified, as is the necessary cooling. This requires a precise thermal and thermodynamic consideration of the heat loss resulting from the load conditions defined in the specification. System simulation software which is suitable for power electronics can be very helpful here provided that the simulation parameters which are entered correctly reflect the conditions prevailing in the application. It proceeds slightly more laboriously of course also „manually“ with the aid of everything you have learned in your studies. Ohm, Kirchhof, Fourier etc. come into play. In the case of air-cooled power electronics, we are automatically confronted by flow-dynamic problems, but in the case of liquid cooling we also face electrochemical problems in the form of material compatibility in the water cycle and water treatment. The power electronics must be able to mechanically withstand all of the current loads which occur, including short-circuit current loads. It must be possible to absorb the mechanical forces which occur here without any damage being caused. It is certain that mechanical size data will be defined in the specification and this must not be exceeded. Overcurrent protection devices, if necessary, may well require a large amount of space. ties, chargers etc., etc. Power electronics can be found everywhere. At this point, we should not forget to mention the huge new up-andcoming market: the electric car with all of its main and ancillary equipment such as battery chargers. As can easily be seen, a huge new interesting and varied field of activity is opening up here. In order to implement all of these power electronic systems, whole „arsenals“ of the power semiconductors differing in type and power data are available from various manufacturers. First and foremost, these are thyristors and diodes in all technological versions, MOSFETs and IGBTs as rapid turn-off MOS or BiMos power semiconductors as well as IGCTs and in certain limits also GTOs as turn-off bipolar power semiconductors for use at maximum power levels. We thus now have all the ingredients in the form of applications and power semiconductors which are a prerequisite for the development of power electronics, apart from a specification. This transforms the requirements emerging from the application into a set of demands for the power electronics which are to be developed. Naturally a wide range of different performance requirements are placed on the abovementioned power electronics, owing to their spe- 22 Bodo´s Power Systems® The same applies to voltage stress. The insulation coordinates in accordance with DIN IEC must be borne in mind here. Very particularly, this applies to developments in the medium-voltage or high-voltage range in relation to partial discharge resistance and the prevention of corona discharges. Any snubber circuits that may be required will be designed in accordance with the requirements which are defined in the specification. All power electronics cause line-conducted interference which needs to be kept within the permitted limits by using suitable filters. The same applies to radiated emissions. Emission values must not exceed defined limit values. The power electronics themselves and the associated signal electronics such as driver boards, interfaces and CPUs must operate reliably even when there is interspersed stray radiation. Nevertheless, they work in a very dynamic environment with voltage edges of a few kV/us and rates of current increase of up to a few kA/us. This is achieved through suitable cable routing and suitable screening measures. Up until now, we were dealing with the „macroelectronic“ sector. But power electronics does not just consist of metal and precious metal; there is also a need for „microelectronics“ in the form of driver boards for actuating the power components, interface boards as interface March 2012 www.bodospower.com MAKING MODERN LIVING POSSIBLE Be certain you have the coolest solution in power electronics It cannot be stressed enough: efficient cooling is the most important feature in power modules. Danfoss Silicon Power’s cutting-edge ShowerPower® solution is designed to secure an even cooling across base plates, offering extended lifetime at no increase in costs. All our modules are customized to meet the exact requirements of the application. In short, when you choose Danfoss Silicon Power as your supplier you choose a thoroughly tested solution with unsurpassed power density. Please go to http://siliconpower.danfoss.com for more information. http://siliconpower.danfoss.com COVER STORY electronics between driver boards and CPUs, auxiliary voltage supplies, current, voltage and excess temperature sensors, etc. However, for these „miniature electronics“, the same set of requirements as specified previously applies when they are used in the field of power electronics. With a little bit of luck and even more skill, the desired power electronics developed according to specification will then be mounted in the switchgear rack. The equipment is then „brought to life“ with the software which is suitable for the demands of the application. Functional trials, hot run tests, catastrophic failure tests and final qualitative tests demonstrate that the new power electronics are ready to be launched on the market. municate on the subject that has built up as a result of more than thirty years of professional experience working in the field. It goes without saying that a newcomer to the industry cannot be expected to have this depth of knowledge. They will need to be introduced to the subject matter gradually step by step. This is also what happened to me over my professional career and even I still learn new things every single day. Over the years, very diverse problems are thrown up, both as far as the applications themselves are concerned and in relation to the electronic solutions to them, with the widest range of different characteristics of power semiconductors being used in them. You come into contact with experts from lots of different fields, learn The job of the development department would thus have come to a successful conclusion. And this is precisely the point in time at which the people involved in this development look back with satisfaction and state: Although it was hard work and stressful, it was a great deal of fun! Subset 2, the satisfaction factor. As has already been alluded to, power electronics is a complex overall field which touches on lots of different specialist areas and subjects both in relation to the development work itself and the specific characteristics when the electronics are subsequently put into use. It is possible that, due to this complexity, my description may serve to put off rather than motivate people who may have been interested in a possible career in the power electronics sector. Such people should be reassured that they have simply experienced all the need to com- about the technical problems presented there, and you get to work with people of different natures and from different cultures. Often a role in our field of power electronics involves trips to faraway countries in order to take a look at problems on the ground and come up with the right solution. The opportunities for development both professionally and personally are vast. Over the years, as your wealth of experience grows, you become a valued technical dialogue partner, establish increasingly close links within the very tight-knit group of people in our industry, and you essentially become a „member of the family“, usually for life. This does of course lead to a high degree of personal satisfaction. Subset 3, where does the journey lead? Where does the journey lead? Ultimately, every person must determine this for themselves and it will depend on people’s own personal inclinations and desires. Our industry has room to accommodate all personality structures from introvert to extrovert and it is multi-culturally liberal. Our field of activity stretches all around the world. This means that, with the appropriate training, everybody can find an area of activity that suits them, whether it be in development or marketing, or in sales or quality assurance or, or, or! The future outlook regarding a job in the power electronics sector has never been as rosy as it is today. Our society has recognised that, for the sake of our children, we must reduce CO2 emissions when it comes to generating power. At the same time, we were forced to acknowledge after Fukushima that the unbridled use of nuclear power plants is probably not the answer to all of our problems. On the other hand, it is clear that providing a secure and stable supply of electric power is an absolutely basic requirement for achieving healthy economic growth in the different economies around the world and ultimately for safeguarding social peace and harmony within society and within the international community. 24 Bodo´s Power Systems® March 2012 www.bodospower.com How stable is your switched mode power supply? The Government of the Federal Republic of Germany was therefore one of the first countries to decide that five nuclear power plants should be taken offline and that increasing focus should be placed on renewable energies. A decision such as this does of course have wide-reaching consequences as countless gigawatts of power which were previously fed centrally into the grid need to be replaced. Accomplishing this with large-scale power plants fired by fossil fuels as a substitute would be counterproductive. As things stand today in the world of technology, the only option is to generate increasing amounts of renewable energy. The result of this is that we will have a decentralised system of power production, but unfortunately this will rarely be where the electric power is actually required at any given time. As a consequence, for generating power we will require many more, if not very many more, onshore and offshore wind turbines, pumped storage hydro power stations, hydraulic power stations, tidal power stations, photovoltaic installations, geothermal power stations or large-scale solar-thermal installations in the sunbelt around the earth. Large quantities of power electronics are required everywhere. As the power generators mentioned previously feed power into the grid in a decentralised manner and are usually not located at the places where the electric power is needed, a power distribution system which is capable of handling this is required. To transport and distribute the electric power, we require h.v.d.c. transmission routes, network interconnections, mains supply solutions, smart grids, passive and active filters, etc. The networking of the power transmission routes will not just take place at a national level but also across national borders, certainly within continents and in the future also globally. This is because the sun is always shining somewhere on this earth. Here too power electronics will be required in very, very large quantities. To be able to meet the CO2 emission limits of the future, to which many countries have already signed up, it will be absolutely imperative to replace vehicles which run on petrol and diesel with electric vehicles. In the Federal Republic of Germany, the desire of the government is that within the next 10 years at least 1 million such vehicles should be on the roads. As well as the drive inverters, electric vehicles also require battery chargers. Even if you assume that just five per cent of all the vehicles on the world’s roads are going to be replaced, this means that another gigantic market for power electronics will emerge. Up until now, we have spoken only about “ new” and “more” power electronics. But that does not tell the whole story. There are lots of electrical applications such as mediumvoltage drives which are still unregulated today. The excess energy is simply burnt off. Gigantic amounts of power simply blow up into the sky as heat loss, taking with it the CO2 which was just produced in order to generate this excess electric power. With new high-blocking semiconductors, it is now possible with an acceptable level of outlay to develop power electronics which provide the amount of electric power required for such motors in accordance with the actual load. Many other examples of the ways in which power electronics are used could be listed, but we will leave it here. As it is easy to see, an almost infinite number of opportunities are opening up in the field of power electronics for people who decide to pursue a career in this sector. The same is true of the opportunities for personal and professional development on offer. You could almost conclude from this that we represent the future for this planet. We are the „saviours of the earth“. With the work we do, we are stopping global warming by reducing and preventing emissions of CO2. We are making this planet viable for the future lives of our children and our children’s children. We are rendering nuclear power plants that can explode with disastrous consequences redundant and preventing the homes of hundreds of thousands of people from suffering radioactive contamination. Check it out with the Vector Network Analyzer Bode 100 and the Wideband Injection Transformer B-WIT 100: IT 100 er B-W tion Transform Wideband Injec Optimized for signal insertion into control loops of any kind Extremely wide frequency range (1 Hz – 10 MHz) Fully 600V CAT II compliant output Teams up perfectly with OMICRON Lab’s Vector Network Analyzer Bode 100 More at: www.omicron-lab.com IF THIS IS NOT SEXY!!!! And this is where it comes to an end, the search for the Golden Fleece. There is no need for an odyssey across the Mediterranean like the one that Jason once undertook with his Argonauts in a search for happiness and prosperity. The place where the Golden Fleece can be found is described here, you just need to bend down and grasp it. Vector Network Analyzer Bode 100 (1 Hz – 40 MHz) and Future.Pad Tablet PC from www.ibd-aut.com www.gva-leistungselektronik.de www.bodospower.com March 2012 Smart Measurement Solutions C O M M U N I C AT I O N P O W E R Implementing “Green Power” in Telecom Architecture Why Green Power in Telecom? Telecommunication industry consumes about 1% of electrical energy worldwide that equals to 160B kWh [INTELEC’08]. International Telecommunication Union (ITU) estimates that Information and Communication Technology contributes 2.5% into the worldwide greenhouse gas emission. By Pietro Scalia, EMEA Power Marketing Manager for Telecom Worldwide trend for energy saving and “Green power” generation and distribution, have resulted in a wide number of voluntary initiatives and mandatory regulations by international and government organizations for increased efficiency of electronic equipment including data and telecommunication power systems, which any system of new generation has to comply with and following the indications. Power Architecture description This article describes the implementation of a Telecom Base Station Radio Unit Power Architecture (fig.1) from -48V to the full set of output loads, providing overall high conversion efficiency (higher than 92%). The complete system, supplying about 1.5kW, comprehends 4 isolated Power Supply Units from the negative 48V Battery Bus. One of them generates an Intermediate Bus Voltage (whose value is properly chosen to maximize overall conversion efficiency), for distribution to the main processing DC loads and the antenna (overall about 180W). The other three provide power to the Power Amplifiers (300W each) working in Slow Drain Modulation, modulating the supply voltage according to a feedback signal from the PA. All the 4 Isolated PSUs were designed to minimum cost, and with most homogeneous BOM among the converters. The SDM performance in the PA PSUs required implementation of an extra current loop for reverse current protection during the fast drop of output voltage (slew rate of about 12V/200usec is achieved when changing the output voltage from 32 to 20V), implementing also limitation of the slope of SDM pilot signal coming from the PA, both mechanisms to avoid excess of energy to flow back from the output to the input bulk capacitors. Effective driving stage and Full Bridge configuration of output Synchronous Rectifies completes the particular bidirectional topology of the SDM PA PSU, implementing Phase Shifted Full Bridge converter, which guarantees minimum leakage, low over-voltages and therefore the use of 200V standard Fets on both primary and secondary side (achieved efficiency is almost 94%). The IB Voltage was chosen according to the possibility of maximize the efficiency of the Isolated converter generating that voltage, increasing the value to maximum extent to best overall efficiency result. A very cost optimized solution for the IBC, based on output diode rectification and the same primary stage than the SDM converter, implements premium efficiency also for this stage (higher than 93%). The PoLs using 30V NexFETs (CSD17xxxQx) and fixed frequency PWM (TPS4019x) implement still acceptable efficiency at the very low duty cycle of operation, not penalizing the overall result and achieving low cost BOM, minimizing number of used part numbers. 26 Bodo´s Power Systems® The realization of the complete power architecture is based on a multi designs process. Several PMPs (Reference Designs) have been realized to build the single blocks constituting the architecture, from the simple PoLs to the complex isolated converters. The tough thermal environment characterizing Telecom applications, with 85°C PCB temperature, has been considered as ground specification for the high efficiency goal, to design the converters and their parts (magnetics, passives). According to the following considerations, which will describe in detail the key design process and selections, the Isolated converters are based on the following topologies and the same “green mode” PMW, UCC28950 for PSFB. Green Mode Highlights are the Adaptive ZVS Deadtime, Adaptive timing between PRI & SEC Synch-Rectifiers, Disable Synch-Rectification at DCM/CCM boundary, ‘Intelligent’ Burst Mode. The IBC PSU (300W output) is based on a PSFM with Primary Side Control and Diode Rectification. The SDM PA PSU (3X350W output) is based on PSFB with Secondary Side Control and FB Synchronous Rectification. AUX SUPPLY (5W output) is based on Multi-output Flyback with TPS40210. Figure1: Telecom RF System typical Power Architecture Topology selection HB has potential drawback for large transient applications because it is difficult to maintain flux density balance of power transformer and charge balance of capacitor simultaneously during fast duty cycle and load current changes. Thus, it is recommended to use peak current mode control to improve the flux balancing, if possible compared to converter operation. At this power level, FB offers also better implementation. HB anyway will require 4 switches, due to the need February March 2012 2012 www.bodospower.com C O M M U N I C AT I O N P O W E R of paralleling 2 switches per leg, so the FB offers better layout possibilities and thermal dissipation of the bridge. For the IBC with significantly high output voltage, synchronous rectifier will offer only marginal advantages compared to diode rectification (below 1% efficiency improvement). On the other side, diode solution will provide lower cost achievement. For SDM converters, synchronous rectification is mandatory to allow the reverse power flow generated by the step down in output voltage (output capacitor discharge). For the SDM converter (32V output) a FB secondary structure (bidirectional, symmetric, for minimum leakage and over-voltages) offers benefit of lower rated FETs and consequent lower cost. Phase Shifted technique on the FB primary side, for both the two different converters, is a good strategy to reduce losses on the primary Fets (ZVS) and make the converter size acceptable PWM Controller Considerations For applications, like the SDM PA PSU, with large load current transients and requiring fast wide-range output voltage transitions, the wide bandwidth of feedback loop is critical. This dictates location of the controller on secondary side thus eliminating slow response opto-couplers from feedback loop. Peak current mode control may be preferable to protect and preventing from possible transformer flux unbalancing during large transients, otherwise voltage mode will require current limitation and series unbalance capacitor. To protect the converter during SDM output dynamic transition from maximum to minimum output voltage, specific protections based on reverse peak current limitation and control signal (SDM) slew rate limiting, have to be implemented (alternatively). The SDM Operation is characterized by an output voltage dynamic performance (T_rise/T_fall and a T_settling) at a minimum output load (worst case), and maximum load capacitance. The faster the power supply output can follow the control signal without stability issues or deteriorating the over/undershoot specification, the better is for the application. Measurements and Results у12V/500μsec ( SDM Control signal slew rate limited ) Figure 3: SDM Measurements: control signal slew limited Compensation circuit needs to be designed to achieve at least 1/10 cross-over frequency relatively to the fs. FB converter has output filter operating frequency doubled versus converter frequency thus providing wider bandwidth of feedback loop versus single ended topologies. Figure 4: Efficiency Performance of the ”Green” Power System The IBV PSU (PMP6720) operates at fsw=200kHz with measured η=92.5% @20A. Board is 6X15cm, (single side mounting for easy prototyping and testing). Figure 2: SDM PA PSU - PMP5726 Board Picture SDM PA PSU Protections and Performance During output dynamic transition from maximum to minimum output voltage, the current will flow from output to input of the FB converter (output capacitor discharge) Voltage Mode control becomes therefore best option, to avoid current signal to act on the converter against the reverse power flow operation. For this reason, capacitor flux unbalance protection has to be inserted in primary side of input transformer. The SDM PA PSUs (PMP5726) operate at fsw=200kHz with measured η=93.7% @11A. Board (fig.2) is 10X15cm (single side). The achieved crossover frequency is 17 KHz, with phase margin of 66degs. The output step load change, for the full load transient, is measured less than 2%. The SDM dynamic performance is measured as output voltage variation from 32 to 20V over time with a 12V/500μsec (fig.3 SDM Control signal slew rate limited and output current set at 1A, repetition rate 50Hz), and of 12V/225μsec with Reverse Current limitation of 5A. The overall system efficiency is summarized in the Table of fig.4, as calculated starting from the single parts of the power architecture. For this reason the current sense signal (to be used only for limitation) has properly to be extracted from primary side leg of the main transformer. 28 Bodo´s Power Systems® March 2012 www.ti.com www.bodospower.com SKiN Technology Wire bond-free Reliable and space-saving packaging technology for power semiconductors Free from thermal paste and solder 10 x higher power cycling Current density of power unit doubled: 3 A/cm 2 For 35% smaller inverters Standard Technology Australia +61 3-85 61 56 00 Brasil +55 11-41 86 95 00 Cesko +420 37 80 51 400 China +852 34 26 33 66 Deutschland +49 911-65 59-0 España +34 9 36 33 58 90 France +33 1-30 86 80 00 India +91 222 76 28 600 Italia +39 06-9 11 42 41 Japan +81 68 95 13 96 Korea +82 32-3 46 28 30 Mexico +52 55-53 00 11 51 Nederland +31 55-5 29 52 95 Österreich +43 1-58 63 65 80 Polska +48 22-6 15 79 84 Russia +7 38 33 55 58 69 Schweiz +41 44-9 14 13 33 Slovensko +421 3 37 97 03 05 Suid-Afrika +27 12-3 45 60 60 Suomi +358 9-7 74 38 80 Sverige +46 8-59 4768 50 Türkiye +90 21 6-688 32 88 United Kingdom +44 19 92-58 46 77 USA +1 603-8 83 81 02 sales.skd@semikron.com www.semikron.com LIGHTING Spectral Tuning for White LED based Luminaries A smart LED driver can be adjusted for brightness degradation over lifetime If you ask a consumer to characterize the perfect light, you might hear in their description a light requiring the lowest amount of energy, the light output and color is adjustable, it will last a very long time, etc. to list but a few of the many desirable characteristics. By Brian Johnson, Lighting Specialist, Fairchild Lowest input energy is the efficient conversion of input power to lumen output known as efficacy, adjusting light output relates to dimming to soften the light’s brightness, or better yet add in adjustment of the light fixture color in order to simulate day versus night conditions and can maintain the light output for a long useful lifetime by tuning the bias current through the LEDs. Incandescent lamps suffer from low efficacy and low usage life times, Sodium lamps offer little color options and low usage life times, and fluorescent lamps have fewer dimming options in retro-fit applications and low usage life times. High brightness LEDs however, promise good efficacy, excellent life time, color choices with easy dimming control and no UV rays. These promises are realized and dependent on the smart design of the control gear or LED driver electronics. A smart LED driver can adjust for brightness degradation over lifetime, can provide the drive characteristics to adjust for color; and replace the need for LED binning to a desired color and brightness by using spectral tuning on a set of different LED’s in a system to dial in to a desired color and brightness characteristic. effects, i.e. natural light from the side of the room with windows to the outside or hallway lighting reflecting into a room. Figure 1: LED Bins on the Chromaticity Diagram Spectral Tuning versus Binning Spectral tuning is combining the spectral power distributions of several LEDs, for example mixing red, green, and blue LEDs properly resulting in white light. This RGB combination is also used to create almost any color of light. If the LED driver is not designed to accommodate a set of different LEDs, then the designer has to choose from binned LEDs in order to create a specific color. Binning is the process manufacturers use to group LEDs based on luminous flux and color. As an example, Figure 1 shows the “bins” for an industry standard set of LEDs. The bins are showed by the rectangular regions plotted on the Chromaticity Diagram. A set of light fixtures that contain LEDs from a specific bin will be close in color and brightness characteristics. However, in a large office or factory environment containing many light fixtures, binning may still result in non-uniform light color that will be noticeable across a large set of light fixtures. A binned LED design will not provide a way to vary the color of the light fixture. A set of different LED colors using feedback to tune the spectral characteristics of the different LED’s in a system can create a compensated lighting system in the office environment that will create a uniform effect across the room. Spectral tuning can also compensate for other 30 Bodo´s Power Systems® Another effect of LEDs is the shift in color from a change in the LED forward current. Figure 2 shows color change versus forward current for an industry set of LEDs. Figure 2: LED Lamp Units by Application The LED driver can be designed with a tight constant current (CC) output tolerance, however tightening the CC tolerance will increase in cost of the LED driver. A lower cost solution is when the designer uses a feedback system to adjust for LED color shift where the feedback compensates the color variance due to forward current across a set of LEDs. Binnig LEDs usually has manufacturing implications that result in increased cost of the LEDs purchased. Just because a binned set of March 2012 www.bodospower.com LIGHTING LEDs is specified, a number of LED drivers may still not match the binned application bias forward current set point across a large number of fixtures. There are also temperature effects and lifetime degradation effects that can cause variation in fixture color. Feedback using Spectral Tuning Feedback or the use of a control scheme that can counter the variation effects of the system will be described to create a fixture that can automatically adjust color and brightness. Color sensors and a microcontroller are used to process the sensor inputs. An example color sensor uses photo diodes with a non-organic three way color filter, offer exceptional stability and very low drift over temperature and ageing, and the filters are designed to implement the spectral sensitivity curve of the human eye (CIE1931). power supplies providing up to 10W each for LED strings containing amber and green LEDs. This gives a total electrical power of 50W. Figure 5 shows this luminaries design at full power. The color sensor is located in the middle of the luminaire array, facing down, to achieve a proper measurement of the light color and intensity. No color or brightness differences could be seen by test personnel. Figure 6 shows luminaries’ dimmed down. Notice some of the luminaries’ actually turned off due to high ambient light conditions, i.e. sun light from the windows. The schematic of the closed loop spectral tuning luminaire is shown in Figure 3. Figure 5: Spectral Tuning Luminaries at full power Figure 3: Spectral Tuning Luminaire The control loop is shown implemented with a micro controller. The control loop measures both brightness and color through the sensor and uses the PWM signal to adjust the currents in the LED strings. The FAN7346 has the ability to control the current in the individual LED strings with a PWM input signal. The power supply can be a power factor correction front stage followed by a LLC dc-dc second stage to provide power to multiple LED strings, Figure 4. The power supply could also be an off-the-shelf design with the FAN7346 controlling the feedback to the power supply. Alternative designs can consist of three power converters (30W/10W/10W) independently controlling three sets of LED strings using white, green, and amber colors creating a white based tuning system or use three strings with identical power supplies to “mix” three strings with red, green, and blue LEDs for a wider color tuning range. The need to bin the LED colors is not required; pick low cost LEDs that have the performance needed for the light application. Figure 6: Spectral Tuning Luminaries dimming Conclusion A LED system that uses spectral tuning is shown to provide uniform color characteristics in office or factory environments. Spectral tuning allows color compensation from sunlight or other light sources that may be affecting the space where brightness and color control are desirable. The feedback system can also offset aging or drift effects associated with LED lifetime and color shift. Cost effects from tightly binned LEDs are also eliminated since spectral tuning feedback is used to control the color. Other benefits from the example presented can include calibration, implementing advance protection features, setting safety light conditions to balance light output versus power used from a battery backup versus lighting a desired escape route, and dimming can be remotely controlled through a wireless interface targeting specific fixtures versus controlling the entire system. www.fairchildsemi.com Figure 4 Spectral Tuning Luminaire Power Supply Example System An example system was created to tune for white lighting in an office environment. Three flyback PFC power supplies were operated in parallel with the main power supply operating with output power up to 30W driving the main string of white LEDs along with two additional 32 Bodo´s Power Systems® About The Author Brian Johnson is the America’s and Europe Lighting Specialist for Fairchild’s LED Lighting Product Segment. He has been with Fairchild for over a year after spending 20+ years rotating in Development and Marketing positions in the Power Electronics Industry. He graduated from Purdue University with a B.S.E.E. and M.S.E.E. February March 2012 2012 www.bodospower.com BERGQUIST HIGH-PERFORMANCE LIQUID GAP FILLERS NowThere’s A Liquid Gap Filler That Won’t Miss Any Curves. Liquid Gap Filler1500 (Two-Part) DispensesWhereYouWant It, Without “Stringing”, Offers Superior Thermal Conductivity. Gap Filler1500 forms-in-place, offers faster throughput with reduced pressure – putting less stress on equipment. Complete thermal solutions for automated dispensing. Gap Filler 1500 is just one of our many robust thermal solutions that boost your process performance. Confidently tackle your high volume Gap Filler1500 is an advanced thermal material specifically designed to dispensing needs by capitalizing on our expertise. Bergquist can guide you support optimized dispensing control and exhibits an excellent thermal to the best thermal solution from gap fillers to dispensing. Our thermal conductivity of 1.8 W/mK. This material features superior slump resistproducts help keep the world’s electronic components running cool. ance and high shear thinning characteristics for maximum dispensing control. Its smooth dispensing results in Learn more with a FREE Sample Kit. precise material placement, in half the Take a closer look by getting your FREE Gap Filler time as compared to one-part materials. Sample Kit today. As a mixed system, it cures at room temSimply visit our web perature and can be accelerated with the site or call us addition of heat. It is designed to fill directly to qualify. unique and intricate gaps and Gap Filler 1500 has natural tack and cleanly flows into position for final assembly without leaving thermal material behind. voids without stress. Call +31 (0) 35 5380684 or visit www.bergquistcompany.com /noslump FREE Promo Pocket with Dispensed Sample and Data Insert. European Headquarters - The Netherlands. Tel: EU +31 (0) 35 5380684 . D +49-4101-803-230 . UK +44-1908-263663 Thermal Materials • Thermal Substrates • Fans and Blowers M A G N E T I C M AT E R I A L S Advanced Ferrite Material for Photovoltaic Systems Nearly loss-less Low-loss and high saturation flux density core materials in reactors and transformers are a key determining factor for the efficiency of inverters. The new TDK PE90 ferrite is a cutting-edge material that minimizes reactor losses in the step-up chopper and smoothing circuits of inverters for photovoltaic systems, thus enabling decisive increases in conversion efficiency. Based on material of TDK-EPCOS State-of-the-art inverters and power conditioners for photovoltaic systems have at least two reactors that are vital for the power conversion processes. One reactor is needed for the boost converter (stepup chopper circuit) and one is needed for output EMC filtering or smoothing (Figure 1). The future goal for modern inverters is to achieve an efficiency of 98 percent and higher. At least two power reactors are needed for solar inverters: one in the boost converter (step-up chopper) and one at the ouput of the inverter for EMC filtering. Besides the IGBTs, the losses in the reactors are a major determining factor of the overall efficiency of the inverter. Advanced TDK PE90 ferrite opens new possibilities The new TDK PE90 ferrite represents a further development of the existing high saturation flux density material PE22. The two materials were tested in a prototype reactor with dimensions of 109 × 55 × 115 mm³. The adjusted air gap values and inductance values of PE22 and PE90 were at a similar level (1.1 mH), and the DC superposition current peak value, which is determined by magnetic saturation (inductance decreased by 10 percent from IDC of 0 A), was adjusted to around 20 A. DC superposition characteristics, which determine the current capability of reactors and transformers, are a vital factor for their design. While the conventional high saturation magnetic flux density material PE22 reached magnetic saturation at 19 A, the newly developed PE90 could still function as a reactor at up to 21 A, a level about 10 percent higher than that of PE22 (Figure 2). Thanks to its excellent material characteristics and high saturation magnetic flux density, the TDK PE90 material allows a current level that is approximately 10 percent higher than the conventional PE22 material. The prototype reactor used in the test is shown on the right. Figure 1: Basic circuit configuration of inverters Conventional core materials cause reactor losses of around 0.5 percent of the output power for each reactor. Until recently, this was not considered significant. In the increasingly competitive solar market, however, these values negatively impact on a system’s marketability. Thus, the design of the reactors and the transformers is becoming an ever important focus of manufacturers of inverters and power conditioners. If the reactors and transformers are to help make inverters more efficient, they must exhibit a saturation magnetic flux density that is high enough to support the peak current of inverters in the 3.3 to 5.5 kW class, which are widespread for household photovoltaic systems. They must also have much lower core losses than can be achieved with conventional core materials such as silicon steel sheets or sendust. A solution for this application is the advanced TDK PE90 ferrite material with excellent loss and saturation flux density properties. 34 Bodo´s Power Systems® Figure 2: Example of inductance change vs. DC superposition characteristics Furthermore, the core loss of TDK PE90 material at 100 °C was 23 percent lower than that of PE22, which makes the rise in magnetic flux density steep, and the minor loop’s linearity was maintained right up until it was saturated. In other words, PE90 is an outstanding power ferrite with high saturation magnetic flux density Bs and is the first such material to qualify as a low-loss material. As a result, it is now possible to replace reactors that employ soft magnetic metal with reactors that use TDK PE90, without changing the size. March 2012 www.bodospower.com 2^]ca^[<PV]XÀTS BX\_[XUhSaXeX]VSTÁTRcX^]RXaRdXcbX]bRXT]cXÀRX]bcad\T]cPcX^] Image sampling magnified 500,000X via scanning electron microscopy (SEM). ?0"#GBTaXTb?^fTa0\_[XÀTa82b 2Xaadb;^VXRd]STabcP]SbcWTRWP[[T]VTb^U STbXV]X]VWXVWe^[cPVTSaXeTb U^aSTÁTRcX^]RXaRdXcahCWT?0"#GbTaXTb^U [^fR^bc_^fTaP\_[XÀTa82b UTPcdaTb0_Tg?aTRXbX^]?^fTa cTRW]^[^Vhc^ PRWXTeT eTahWXVWe^[cPVT ^_TaPcX^]^U d_c^ ""e^[cbP]Sd_c^ %%e^[cbX]QaXSVTR^]ÀVdaPcX^] fWX[T_a^eXSX]V^dc_dcRdaaT]cc^__X]V^dcPc !\0?40:2Xaadb;^VXR ^UUTab cWTbT82bX]\d[cX_[T_PRZPVX]V^_cX^]bc^ PSSaTbbQ^PaSb_PRT aTbcaXRcX^]bfXcWP]X]SdbcahbcP]SPaS?B>?^a PWTa\TcXRP[[hbTP[TSC>"U^acWT\^bcadVVTS ^U ^_TaPcX]VT]eXa^]\T]cb I^^\X]Pc fffRXaadbR^\Q_b_P"#g P]SaTVXbcTaU^aPUaTTbP\_[T ! !2Xaadb;^VXR8]R0[[aXVWcbaTbTaeTS2Xaadb;^VXR2XaadbcWT2Xaadb;^VXR[^V^STbXV]b0_Tg?aTRXbX^] ?^fTa 0_Tg P]S cWT 0_Tg ?aTRXbX^] ?^fTa [^V^ STbXV]b PaT caPST\PaZb ^U 2Xaadb ;^VXR 8]R0[[ ^cWTa QaP]Sb P]S _a^SdRc ]P\Tb \Ph QT caPST\PaZb ^a bTaeXRT \PaZb ^U cWTXa aTb_TRcXeT ^f]Tab 1?B"! ! M A G N E T I C M AT E R I A L S Cutting reactor losses by up to a third The advantages of TDK PE90 ferrite are even clearer when compared to conventional materials such as silicon steel sheet and sendust. A comparison of the actual performance of the reactors integrated in the power conditioner based on their total iron and copper losses demonstrates the superiority of TDK PE90 over conventional materials. In a simulation of the reactors used for the smoothing circuit of the inverters for 3-kW photovoltaic system PE90 material cores exhibit 33 percent lower losses than a similar sized silicon steel sheet reactor and approximately 30 percent less than a similar sized sendust reactor (Figure 3). Figure 3: Loss comparison with silicon steel sheet and sendust and sendust. Moreover, the latest IGBTs for high power applications feature significantly lower losses and are much faster, enabling 30 to 50 kHz drive elements that are in line with the high-speed switching requirements of power conditioners. If all of the installed reactors, including those for step-up choppers, are designed with the advanced ferrite material TDK PE90 with its superior core loss frequency characteristics, the operating frequency of inverters can be set at 30 to 35 kHz rather than the currently standard 15 to 20 kHz. Nearly doubling the operating frequency range makes the use of silicon steel sheets and sendust difficult. Even in the higher frequency range, the core loss of TDK PE90 remains much lower than that of the sendust material at 15 to 20 kHz. While the copper loss increases at the higher frequencies, the magnetic flux density required decreases, which means that the core size can be reduced. As a result, the use of TDK PE90 as core material will enable even more efficient inverters with even smaller reactors to be designed. Initial permeability * [kW/m³] at 23 °C: 2200 Core loss PCV ** [kW/m³] at 90 °C: 60 at 100 °C: 68 Core material Silicon steel sheet Core dimensions [mm] * PE90 Saturation magnetic flux density Bs *** [mT] 105 × 110 × 60 at 100 °C: 430 Reactor loss [W] 14.4 9.7 Residual magnetic flux density Br *** [mT] at 23 °C: 170 Loss ratio [%] ** 100 67.4 Intrinsic coercive force HC *** [A/m] at 23 °C: 13 Loss reduction [W] — 4.7 Curie temperature TC [°C] 250 min. Specific electric resistance [Ω x m] 6.0 Core material Sendust PE90 Apparent density dapp [kg/m³] 4.9 × 103 Core dimensions [mm] * 100 × 110 × 60 105 × 110 × 60 Thermal expansion coefficient [1/K] 12 × 10-6 Reactor loss [W] 13.8 9.7 Thermal conductivity Κ [W/mK] 5 Loss ratio [%] ** 100 70.3 Specific heat Cp [J/kg × K] 600 Loss reduction [W] — 4.1 Flexural strength δb3 [N/m²] 9 × 107 Young modulus E [N/m²] 1.2 × 1011 Magnetostriction constant λS -0.6 × 10-6 * Cross-section of the core and rectangular windings same for both materials. Number of turns where iron and copper losses are almost the same. ** Proportion where the loss of compared reactor is 100 Figure 3: Loss comparison with silicon steel sheet and sendust * at 1 kHz, 0.4 A/m ** at 25 kHz, 200 mT *** at 1194 A/m Table: Material characteristics of TDK PE90 ferrite material Enabling high frequency inverters with smaller reactors Most inverters that achieve 95 percent efficiency or higher employ trench IGBTs, which provide high-speed operation and low loss properties. But these IGBTs, with a built-in high-speed soft recovery diode, are able to support switching up to approximately 30 kHz, which is beyond the operating frequency range of silicon steel sheets 36 at 23 °C: 530 Bodo´s Power Systems® January March 2012 2012 www.epcos.com www.bodospower.com INTERNATIONAL VDI CONFERENCE 2012 Simulation in Automotive Lightweight Engineering Focus: Material Behavior Internationally renowned technology leaders will present their latest results on the following topics: • how to define material properties requirements with respect to virtual development in the automotive industry • how to simulate fiber-reinforced plastics and create realistic FRP models for integration in the CAE process • how to predict strengths and failures of glued and welded hybrid material structures • how to integrate manufacturing process data in crash behavior simulations of highstrength steels and cast components Hear from experts including: BASF • BMW Group • Daimler • DLR • Ford • Lamborghini • Lanxess • Magma • Magna Steyr • Opel • Polytec UK • Suisse Technology Partners • University of Leicester Place and Date: Chairman: 09th and 10th May, 2012 Dorint Hotel Pallas, Wiesbaden DR.-ING. RALPH STENGER Director GME vehicle simulation, Adam Opel AG, Rüsselsheim www.vdi.de/simulationlightweight Organized by VDI Wissensforum | Phone +49 211 6214-201 | Fax +49 211 6214-154 IGBTS The Next Generation Chipset Technologies for Higher Operating Temperatures This article presents a newly developed 1700V IGBT and diode chip set generation with optimized performances for 175°C junction temperature operation. By B. Aydin, C. Corvasce, ABB Switzerland Ltd, Semiconductors Over the past few years, most of the efforts in power semiconductors development have been targeting the increase of the power density for a given application. Such a performance target can be achieved by reducing the losses, increasing the safe operating area and maximizing the allowable junction temperature during operation. A higher allowable junction temperature of the semiconductor offers better conduction of the generated heat and hence, an increase in the power density for a given device area. The design of power electronic devices operating at ever increasing temperatures brings several challenges: demonstrate the switching capability by keeping the maximum ratings at the maximum specified junction temperature (Tjmax) and also prove stable temperature-dependent performances and high reliability levels at Tjmax [1]. Here we present the 2nd generation of the 1700V SPT+ IGBT, able to be operated up to a maximum junction temperature of 175°C. The new IGBT design combines the advantages of an optimum profiling of the enhancement layer with a novel termination technology, offering outstanding performances for low to medium inductance applications as required in automotive, industrial and regenerative power source fields. The performance chart in inverter mode of a module mounting three IGBTs and three anti-parallel diodes which can typically operate in a medium inductance application has been simulated and is shown in Fig. 1. The results clearly illustrate the advantages given from the new chip set technology platform when compared with the previous SPT+ chip set, which was specified for Tjmax=150°C and optimized for high inductance applications. The reduction of the conduction losses achieved in the 2nd generation of the SPT+ technology offers an increase of 8% (green line) in the inverter output current over the frequency range from 250Hz to 1000Hz in a typical water-cooled application. When combined with the 25°C higher temperature capability, the improvement increases up to 20%, as shown in the red line. 2nd Generation SPT+ IGBT Technology The SPT+ IGBT planar technology successfully introduced in 2005, is avaible in different voltage classes ranging from 1.2kV to 6.5kV [2]. The key advantage of the SPT+ technology is the reduction of the conduction losses when compared with the original planar IGBT cell while maintaining the same controllable switching behavior of the SPT (Soft Punch Through) vertical design. This is achieved by introducing an optimized n-type enhancement layer surrounding the Pwell in the IGBT MOS cell, as shown in the cross section in Fig. 2a. The enhancement layer improves the carrier concentration on the cathode side of the IGBT, thus lowering the on-state voltage drop without significantly increasing the turn-off losses. However the ntype enhancement layer has the inherent problem of reducing the blocking capability of the device and possibly increasing the cell sen- 38 Bodo´s Power Systems® sitivity to dynamic avalanche failures. Hence, the shape of the enhancement layer doping profile must be carefully optimized in order to maximize the enhancement feature and minimize the loss of blocking and avalanche performance. This can be achieved by narrowing the doping profile and increasing the peak concentration as sketched in Fig. 2b. As a result, the high electric field area is reduced with minimum impact on the blocking capability and the plasma concentration at the cathode side is further enhanced with an effective reduction of the conduction losses. Figure 1: Simulation of the inverter output current vs. switching frequency for 1700V SPT+ and the 2nd generation SPT+ chip set with 175°C operation capability. Figure 2: The SPT+ planar cell (a) and of the optimized enhancement profile used in the 2nd generation 1700V SPT+ IGBT (b). February March 2012 2012 www.bodospower.com IGBTS Thanks to the beneficial effect on the blocking capability of the optimized enhancement profile, a thinner n-base design can be used for the 2nd generation SPT+ IGBT with a consequent further reduction of the on-state losses. A reduction of more than 450mV in the conduction losses is achieved using the new technology when compared to the SPT+ platform which, targeting high inductance applications, was designed with thicker silicon. To guarantee reliable operation at high temperatures, a new termination design based on the biased ring concept has been developed. The termination consists of a number of diffused rings contacted by metal islands and interconnected by a semi-insulating layer, as shown in the schematic cross section in Fig. 3a. This termination design has been proven to be immune to inter-ring distance variations and interface states while offering a narrower leakage current distribution when compared to the previous termination design, which was based on the junction termination extension concept. Thanks to this design and process, the leakage current at Tj=125°C and VCE=1700V has been dramatically dropped to a typical value of 120μA, a reduction by a factor of 4 when compared to the values achieved from chips with a non-optimized passivation process, as shown in Fig. 3b. This low leakage current level has been proven to enable stable operation at Tjmax=175°C and for 2500V – 3300V at Tjmax=150°C. Figure 4: The conventional SPT+ diode and the FSA diode (a) showing the probability plot of leakage measured at VR=1700V and Tj=125°C (b) Figure 3: New termination design (a) and the probability plot of the leakage current measured at VCE=1700V and Tj=125°C (b) Field Shielded Anode (FSA) Diode Technology The conventional SPT+ diode uses locally incorporated deep levels by H+ irradiation for local lifetime control in order to tailor the plasma distribution and guarantee stable operation at Tjmax=150°C. In this design, shown in Fig. 4a, the electric field evolving during reverse Let us help you take the next step in Megawatt drives Engineered Press-Pack IGBT Stacks We offer • • • • • A dedicated team of talented engineers Full service from concept to hardware As much or as little as you require 3D CAD and simulation Thermal and electrical test Benefits • • • • Take advantage of our experience Proven and tested solutions Clamping, cooling, components Fast track your next design Typical projects e ee-Mail Mailil us Ma us att pp ppig igbt b @w @wes estc tcod od de. e cco om ppigbt@westcode.com together toge to geth the er we er we have have the hav he solution sol ollut utio ion ion Efficiency Through Technology www.ixys.c om www.westcode.com de e.co om www.bodospower.com • New developments; - MVDs, Wind, STATCOM • Traction refurbishment • Upgrading of GTOs / GCTs • System optimisation For small volume enquiries, use the extensive IXYS Distribution Network, details via our websites: USA: IXYS Long Beach Tel: +1 (562) 296 6584 e-Mail: service@ixyslongbeach.com FAR EAST: IXYS Taiwan Tel: +886 2 2523 6368 e-Mail: sales@ixys.com.tw March 2012 EUROPE: Westcode Semiconductors Ltd Tel: +44 (0)1249 444524 e-Mail: wsl.sales@westcode.com Bodo´s Power Systems® 39 IGBTS blocking penetrates the zone of radiation defects already at very low reverse voltages. This generates a leakage current which does not allow stable blocking operation of the chip at Tjmax=175°C. The newly developed Field Shielded Anode (FSA) [3] is characterized by a modified doping profile. The depth of the anode is maintained by introducing a deep profile with a reduced concentration and resembling a low p-doped buffer, preventing the electric field from reaching the zone of radiation defects during blocking. In addition, a shallow highly doped p-layer ensures good contact and good anode injection in the highcurrent region to enable a good surge current capability. The radiation defects position and concentration are then tuned to tailor the plasma distribution to match the conduction and dynamic properties of the SPT+ diode. This FSA design has the inherent advantage of separating the radiation defects from the space charge region resulting in a significantly reduced high temperature leakage current. Figure 4b shows the comparison between the leakage current distributions of the FSA diode chip when compared to the conventional SPT+ platform. The reduction by a factor of 3 in the leakage current measured at Tj=125°C and VR=1700V allows the FSA diode to be operated at Tjmax=175°C. Because the FSA diode is realized by using a single mask step, the vertical anode profile is also introduced in the horizontal direction. A careful optimization of the lateral design is therefore needed to reach the very high robustness of the conventional diode. 1700V Chip Set Performance Extensive measurements have been carried out to verify the performance of the new 1700V chip setup to the maximum junction temperature of 175°C. A stray inductance value of 200nH per IGBT chip rated 150A, and 100nH per diode chip rated 300A have been used. IGBT Switching Characteristics In Fig 6, the switching waveforms of the new 1700V IGBT are shown as measured under nominal conditions i.e. at 150A and 900V at Tj=175°C. In the turn-off test (Fig. 6a), the IGBT was switched off using an RG,off of 9.4Ohm with a stray inductance of 200nH which results in a voltage rise of 4260V/μs. The optimized N-base region combined with the SPT buffer allows the collector current to decay smoothly, ensuring soft turn-off behavior without any disturbing voltage peaks or oscillations. Figure 6: IGBT switching waveforms at Tj=175°C: (a) turn off, (b) turn on. Figure 6b shows the turn-on waveforms under nominal conditions at Tj=175°C. The low input capacitance of the planar SPT+ cell allows a fast drop of the IGBT voltage during the turn-on transient. This, combined with the low loss FSA diode brings the turn-on switching losses down to a typical value of 68mJ. The reverse recovery waveform of the FSA diode under nominal conditions at Tj=175°C is mirrored in the turn-on current waveform. By carefully designing the anode profile and the local lifetime control peak, a short, but still smoothly decaying current tail was achieved resulting in total recovery losses of 113mJ. Figure 7: RBSOA capability of new 1700V IGBT chip (a) and FSA diode (b) at Tj=175°C. Figure 5: On-state characteristics as a function of the maximum junction temperature: (a) IGBT, (b) FSA diode. Static Characteristics In Fig. 5a, the on-state curves of the 2nd generation 1700V SPT+ IGBT can be seen. The typical on-state voltage drop (VCE,on) at nominal current and Tj=125°C is 2.45V. The IGBT shows a strong positive temperature coefficient of VCE,on, starting already at low currents up to Tj=175°C, which enables good current sharing capability in applications requiring multiple chip paralleling. The typical forward voltage of the 1700V FSA diode measured at Tj =125°C is 2.15 V, as shown Fig. 5b. The diode also exhibits a positive temperature coefficient starting at 200A well below the nominal current, which is the result of an optimized local carrier lifetime profile. The temperature coefficient turns tnegative from 150°C with a VF decrease of less than 1mV/K. In the case of a weak negative temperature coefficient, the thermal coupling between the diode and IGBT chips in the module is still sufficient to avoid thermal runaway of the diode with the lowest forward voltage. 40 Bodo´s Power Systems® In order to evaluate the SOA performance of the 2nd generation 1700V SPT+ IGBT technology, the chips have been subjected to a wide range of switching tests under extreme conditions in terms of current, voltage and stray inductances. Figure 7a shows the IGBT chip turn-off capability of two parallel chips measured at Tj=175°C without an active clamp. The chip withstands a strong dynamic avalanche regime turning off a current higher than four times the nominal value without any oscillation. The reverse recovery safe operating area (SOA) of the new FSA technology was extensively investigated over the whole temperature range using high DC-link voltage and high stray inductance (VDC=1400 V, LS=800nH). The current was stepped up to 2 times the nominal value and, after a successful pass, the reverse recovery di/dt was increased by lowering the gate-resistor value (RG, on) and by increasing the gate voltage of the switching IGBT until the diode failed. In Fig. 7b, the last pass reverse recovery waveforms of the 1700V FSA diode can be seen. The diode manages to withstand a reverse recovery current speed of 1.6kA/μs resulting in a peak power of 550kW. This high recovery ruggedness was achieved thanks to the optimization of the anode design in con- March 2012 www.bodospower.com junction with the resistive extension of the active junction explained above. IGBT Short Circuit and Diode Reverse Recovery Softness The excellent short circuit capability of the new 1700V SPT+ IGBT is shown in Fig. 8a where the short circuit waveforms at Tj=175°C and a DC-link voltage of 1300V can be seen. After the test thermal runaway occured for pulse times up to 17μs with a short circuit current of 440A and a total dissipated energy of 9.8J. The SPT buffer and anode design used in the SPT+ IGBT have been optimized in order to obtain a high short-circuit capability, even at gate voltages exceeding the standard gate drive voltage of 15V and over the whole junction temperature range from 40°C to 175°C. Figure 8: IGBT Short Circuit at Tj=175°C, (a) and Diode Reverse Recovery Softness at Tj=25°C (b). Your ideas – Our design Large capacitors are often the most economical option for high-power applications. Electronicon has over 70 years experience of capacitor manufacturing and 40 years experience of film metallization processes. This expertise puts us in an ideal position to service any capacitor requirements for applications up to 25kVDC/10kVAC and beyond: • Leak-free and vibration-proof thanks to dry construction and solid impregnation. • Reliable pressure monitoring for safe failure mode • Up to 950A (rms) and 700kA (peak) achieved by SINECUTTM windings • Stable cylindrical windings for enhanced life and reliability Custom-designed to meet your requirements. Just ask. In Fig 8b the reverse recovery softness test performed at 1/10th of the nominal rated current at a DC-link voltage of 1300V and using double the nominal stray inductance (LS=200nH) is shown. It confirms the soft recovery behavior showing only small oscillations and a peak overshoot voltage of 1360V. References [1] Schlapbach U. et al., “1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints”, Proc. ISPSD’07, Jeju Island, 2007. [2] Rahimo M. et al., “SPT+, the Next Generation of LowLoss HV-IGBTs”, Proc. PCIM’05, Nürnberg, Germany, 2005. [3] Matthias S. et al., “Field Shielded Anode (FSA) Concept Enabling Higher Temperature Operation of Fast Recovery Diodes”, Proc. ISPSD’11, San Diego, USA, 2011. www.abb.com We exhibit at: Booth: 013/E70 Booth:12/239 www.bodospower.com March 2012 Bodo´s Power Systems® 41 NEW PRODUCTS 40V Quad Precision Amplifiers Feature Lowest Noise Intersil Corporation expanded its family of precision amplifiers, introducing a set of 40V low power, high ESD products that provide excellent DC accuracy and noise performance. These new quad amplifiers are ideally suited for 12-bit to 24-bit process control, instrumentation and data acquisition applications. Designed on Intersil’s PR40 advanced bipolar process, the ISL28407, ISL28417, and ISL28408 all meet the low noise requirements for high gain front ends in industrial control designs while reducing total power consumption for high signal count applications. The ISL28407 operates from 4.5V to 40V with an ultra-low bias current drift of 0.3pA/°C over temperature (-40°C to +85°C), which is 30 percent lower than competitive quad precision amps. The ISL28407’s low offset of 90uV maximum and offset drift of 0.8uV/°C maximum provide high DC accuracy over temperature. It features an industryleading combination of low power (290uA maximum per channel), 1MHz bandwidth, low input bias current drift (0.3pA/°C) and low noise (13nV/?Hz @ 1kHz). The ISL28417 is designed for sensor front ends, DAC buffering, precision voltage regulation or low noise instrumentation applications that need a diverse range of signals. It delivers very high performance while consuming only 530uA maximum per channel, with low frequency noise of only 250nV peak-peak (0.1Hz to1 to 10Hz) and 8nV/?Hz @ 1kHz. Offset voltage is just 70uV maximum, with offset drift of only 0.75uV/°C maximum. www.intersil.com 1700V SiC Schottky Diodes to Improve Efficiency and Enable Cost Savings Cree, Inc. has introduced a series of packaged diodes that deliver the industry’s highest blocking voltage available in SiC Schottky technology. Cree’s 1700V Z-Rec® Schottky diodes virtually eliminate the reverse recovery losses suffered in silicon PiN diode alternatives, enabling ultra-efficient, smaller and lighter systems—all with improved reliability. These newly released packaged products extend the performance improvements and system cost savings enabled by Z-Rec technology at 1700V to lower-power applications designed with discrete components. “Cree’s 1700V silicon carbide Schottky diodes are ideal for high-efficiency power electronics systems,” explained Cengiz Balkas, Cree vice president and general manager, Power and RF. “They provide all the proven benefits of Cree’s Z-Rec SiC Schottky diodes—zero reverse recovery losses, temperature-independent switching and higher frequency operation.” While the 1700V bare die have been available for customers who design their own custom power modules, the new TO-247-2 packages allow customers to take advantage of SiC for lower-power 1700V designs, enable more design flexibility in choosing current levels, and support a faster time to market. Designated the C3Dxx170H Series, the new Cree SiC Schottky diodes are rated for 10A/1700V and 25A/1700V and are available in an industry standard TO-247-2 package. Operating junction temperature is rated for -55°C to +175°C. www.cree.com/power C-Band GaN HEMT Amplifiers for VSAT Applications Mitsubishi Electric is introducing internally impedance matched GaN HEMT power amplifiers for C-band VSAT stations which transmit in the 5.8-6.7GHz frequency range. The MGFC50G5867 and MGFC47G5867 feature industry leading output power of 100W and 50W respectively. The typical linear power gain (Glp) is 10dB for both devices. The two new devices have a power added efficiency (PAE) more than 43% and a high voltage operation (VDS=40V. Due to the good linearity of the GaN process the 100W 42 Bodo´s Power Systems® GaN amplifiers have become very popular due to their high breakdown-voltage and power density as well as high electron saturation velocity. Furthermore, their ability to contribute to power saving and downsizing of power transmitter equipment make them very attractive and lower the importance of GaAs amplifiers which have been commonly employed in C-band transmitters in the past. device can achieve 3rd-order Inter Modulation (IM3) of -25dBc at 46dBm output power. March 2012 www.MitsubishiElectric.de www.bodospower.com NEW PRODUCTS ScopeCorder is Key to Harmonizer’s Power-Quality Testing A Yokogawa DL850 ScopeCorder is playing a key part in tests on synchronised switching devices in power systems being carried out by Harmonizer Power Quality AB: a Swedish company that provides power-quality services for industrial and utility customers. Among the services provided by Harmonizer are measurements of active and reactive power, power factor, current and voltage variations, harmonics and transients. Typical applications include analysing the best location for reactive power compensation in a network, calculating regulation cycles for optimum harmonic- and powerflow control, sizing capacitor banks for shunt or series compensation, calculating and designing harmonic filters for the suppression of harmonic distortion, and sizing surge arresters for transient overvoltage limitation. The application for which the Yokogawa DL850 ScopeCorder is used relates to the synchronised switching of high-voltage filter banks: in particular, programming and checking the functioning of the synchronising device and the circuit breaker. Unsynchronised switching of capacitor and filter banks often results in high-voltage and high-current transients that can have adverse effects on power systems performance and reliability. In order to eliminate these high switching transients and the resultant power-quality problems, the closing and opening operations of the circuit breaker have to be synchronised, which requires accurate monitoring of the relevant electrical parameters. In the ideal scenario, the circuit breaker should be closed when the voltage across the load is close to zero and opened in such a way as to avoid short arcing times which can lead to re-ignitions or re-strikes. To check that these requirements are met, it is necessary to carry out measurements on the circuit-breaker closing and opening times while recording the network voltage and filter current during opening and closing operations. www.tmi.yokogawa.com The Future of Programmable DC Power .FFUUIF6L8UPL8934FSJFT** "QSPHSBNNBCMF%$QPXFSTVQQMZUIBUUPMFSBUFT FWFOUIFNPTUBCVTJWFMPBETUIBUJT.BHOB1PXFS &MFDUSPOJDTōTJHOBUVSFDVSSFOUGFEQPXFSQSPDFTT JOH$PNCJOFEXJUIBEWBODFEDPNQVUFSBOE1-$ QSPHSBNNJOHXPSMEDMBTTTVQQPSUBOETIPSUMFBE UJNFTŋZPVDBOVOEFSTUBOEXIZUIJTJTPVSGBTUFTU HSPXJOHTFSJFT ,FZ1SPEVDU-JOF'FBUVSFT Ŕ )VOESFETPGNPEFMTGSPNL8UPL8 Ŕ 7PMUBHFTVQUP7EDDVSSFOUTVQUP"ED Ŕ -9*5$1*1&UIFSOFU*&&&(1*#3464# Specification XR Series II TS Series III MS Series III MT Series V Models 70 150 84 140 Power 2 to 8 kW 5 to 45 kW 30 to 75 kW 100 to 1000 kW+ Ŕ .BTUFSTMBWFQBSBMMFMPSTFSJFTPQFSBUJPO Voltage Range 0-1000 Vdc 0-4000 Vdc 0-4000 Vdc 0-4000 Vdc Ŕ 4PMBS&NVMBUJPOBWBJMBCMF Current Range 0-375 Adc 0-2700 Adc 0-4500 Adc 0-24000 Adc Ŕ .BEFJOUIF64"&VSPQFBOTFSWJDFBWBJMBCMF XXXNBHOBQPXFSDPN Ŕ *7*ESJWFSTBOESFNPUFJOUFSGBDFTPGUXBSF Ŕ 0QUJDBMMZJTPMBUFEJOQVUTBOEPVUQVU1-$DPOUSPM M P E MAGNA-POWER ELECTRONICS NEW PRODUCTS DS4000 Series Digital Oscilloscopes Feature Up To 1GHz Bandwidth Rigol Technologies EU GmbH introduces the DS4000 series digital oscilloscope, featuring up to 500 MHz bandwidth (BW), 1.5GHz bandwidth differential and single-ended active probes. Designed to reduce test time in research, development and failure analysis applications, Rigol's DS4000 series digital oscilloscopes make detecting signal and device characteristics easier than ever with advanced waveform search, visualization and replay. Rigol's DS4000 series features specifications of up to 500 MHz BW with 4GSa/s sample rate, a standard 140,000 points of deep memory, up to 200,000 frames for waveform record and replay, and up to 110,000 waveforms/second/acquisition rate. In addition, with Rigol's innovative UltraVision technology, DS4000 digital oscilloscopes offer intensity grading display and real-time waveform record and display, with customizable real-time hardware filters available. With a variety of trigger functions and automatic measurements with statistics, Rigol's DS4000 series is perfect for a broad range of applications. These digital oscilloscopes feature serial bus trigger and decodes such as I2C, SPI, RS232, and CAN, as well as advanced math functions. Rigol also offers a variety of active and passive probes and other accessories, arm mounts and rack mount kits. Featuring an easy-to-read, large 9" colour display, the DS4000 series offers an attractive profile. Thin and lightweight, the DS4000 series are perfect for tight spaces or for those that need a powerful portable oscilloscope. Designed to target the requirements of R&D engineers, production test engineers and advanced researchers with its innovative technology, industry-leading specifications, powerful trigger functions and broad analysis capabilities, Rigol's DS4000 series is ideal for applications in the communications, aerospace/defense, research and education, industrial and consumer electronics, computing and instrumentation industries. DS4000 Series oscilloscopes are available in 100 MHz, 200 MHz, 350 MHz or500MHz, 2 or 4 channel varieties. Pricing for the DS4000 series begins at EUR 1495,00 and are dependent upon configurations and quantity. info-europe@rigoltech.com Mini-Flat Transistor Couplers Toshiba Electronics Europe (TEE) has announced two ultra-miniature photocouplers that provide ‘drop-in’ replacement for some of the company’s most popular coupler parts while reducing board mounting profiles by over 17%. The TLP184 and TLP185 ‘mini-flat’ couplers can be used as direct replacements for Toshiba’s TLP180 and TLP181. These popular devices have become established in high component density applications ranging from programmable controllers and AC/DC input modules to telecommunications devices and office equipment. Pin- and functionally-compatible with their predecessors, the new devices have a maximum profile of just 2.3mm. They offer the same minimum isolation voltage (BVs) of 3750Vrms but have a higher insulation peak voltage (UIORM) of 707V. Both of the photocouplers are designed to operate across an extended temperature range from -55ºC to 110ºC and have minimum collector-emitter voltages of 80V. The TLP184 can operate directly from an AC input current and is rated for a maximum forward current of ±50mA. Maximum forward current for the TLP185 is 50mA. Maximum pulse forward current ratings are ±1A and 1A respectively. Construction of the TLP184 and TLP185 is based around a photo transistor that is optically coupled to a GaAs IR LED. In the case of the TLP184 device an inverse parallel connection supports the AC input. www.toshiba-components.com 44 Bodo´s Power Systems® March 2012 www.bodospower.com CONTENTS Power Management DC/DC Converters Simplify Design ZMD AG (ZMDI), a global supplier of analog and mixed-signal solutions for automotive, industrial, and medical applications, has announced a new family of 1, 2, and 3A current-mode synchronous buck DC/DC converter integrated circuits (ICs) tailored for ease of design, quick product development, and low bill of materials (BOM) costs. The 1MHz ZMDI ZSPM401x product line comprises three families and 18 products: the ZSPM4011 1A family, the ZSPM4012 2A family, and the ZSPM4013 3A family. Thanks to their high level of integration, the ICs require only 4 external devices - 3 capacitors and 1 inductor. Each family comes in fixed-output voltage options of 1.5, 1.8, 2.5, 3.3 and 5 volts to reduce external part counts, while allowing for quick part selection and easy design. An input voltage range of 6V - 24 V (3A option is 6V to 20V) lets designers target more applications with one basic 'cookie-cutter' design technique. Each family also offers a variable output voltage option of 0.9V to 5V for maximum part flexibility. At 5V in and 1.8V out, the parts offer 90% efficiency. At 6V in and 3.3V out, efficiency increases to 93%. The high efficiency of the design eliminates the need for any external thermal protection. Additional features are input supply under-voltage lockout, soft-start for controlled startup with no overshoot, and full protection for over-current, over-temperature, and Vout over-voltage. Synchronous switching at 1MHz (+/- 10%) and internal compensation minimizes the number and size of external parts, minimizing board real estate. A typical, low standby mode of 5uA maximizes energy efficiency while reducing the application's power budget. All of the ICs are designed to operate over a robust temperature range from -40 to +125 degrees C. Target applications for these devices span an array of consumer and communications products, including notebooks, tablets, smart phones, portable GPS systems, printers, cable modems, voice-over-IP (VOIP) phones, and wireless access points based on the IEEE802.11 wireless local-area-network (LAN) standard. www.zmdi.com TEST & MEASUREMENT More than ever… NEW ...we need energy, power and our planet. Yokogawa is the market leader in innovative test and measurement technologies focusing on the challenges related to energy conservation, efficiency and sustainability. Together with our customers we help design, build and deploy next generation products that increase the quality of life, productivity and the efficient use of the world’s resources. Energy efficiency in everyday consumer goods, new greener modes of transport and development of renewable energy sources are some of the areas where more than ever Yokogawa is changing everyone’s future for the better. Just take a closer look to the WT1800 Power Analyzer. We are working on a sustainable future For more information on our Power Analyzers, scan the code with your smartphone. Or check the website tmi.yokogawa.com. Alternatively you can either contact Yokogawa Europe B.V. on +31 88 464 1000 or send an e-mail to tmi@nl.yokogawa.com and ask Corrie Zuurveld for more information. International Exhibition and Conference for System Integration in Micro Electronics Nuremberg, 8 – 10 May 2012 The place to be! smt-exhibition.com Organizer: Mesago Messe Frankfurt GmbH Rotebuehlstrasse 83 – 85 70178 Stuttgart Germany Phone +49 711 61946-828 Fax +49 711 61946-93 smt@mesago.de High-Speed Inverter Switching IGBT to 1350V and 40A Toshiba Electronics Europe (TEE) has announced its first high-speed, integrated IGBT to feature a voltage rating up to 1350V. Designed for voltage resonator inverter switching, the new device will address growing demands for IGBTs with higher voltage withstand capabilities. The N-channel ‘enhancement mode’ GT40RR21 saves space and component count by combining an IGBT and a reverse recovery freewheeling diode into a single, compact monolithic device. Suitable for high-temperature operation, target applications for the IGBT include induction heating and induction cooking appliances. Toshiba’s device supports very high-speed operation and can handle peak pulse currents as high as 200A for 3μs. Low turn-off switching losses – typically 0.30mJ at a case temperature (Tc) of 25ºC and 0.54mJ at a Tc of 125ºC – ensure high-efficiency operation. The 1350V GT40RR21 is designed to operate with junction temperatures up to 175ºC. At 25ºC maximum collector current is 40A, and this falls by only 5A at a temperature of 100ºC. Typical saturation voltage at 25ºC (VCS(sat)) is only 2.0V. Maximum diode forward voltage/current is rated at 3.0V/20A. Flyback Design to go Evaluation kits for isolated flyback converters Tadjusted www.toshiba-components.com to IC‘s of Linear Technology TLT3573, 3574, 3575, 3748 Treadymade design, circuit, application optocoupler needed Tstandard transformers available ex stock Tno embedded world hall 2, stand 520 www.we-online.com/LT www.bodospower.com March 2012 Bodo´s Power Systems® 47 NEW PRODUCTS The Industry’s Smallest Single-Package Power Supply Modules ROHM has recently announced the development of the BZ6A series of ultra-compact power supply modules that integrate an inductor, capacitors, and all the other components needed for power supply into a single package. The result is the smallest size in the industry (2.3mm × 2.9mm × 1mm), making them suitable for high-density mounting applications. In recent years, mobile devices, including smart phones, have become much more multifunctional, increasing the number of components along with the number of power sources needed within the circuit. The greater power requirements, along with the trend towards increased miniaturization, demand smaller, more efficient power supplies. The BZ6A series integrates a BU9000X series 6MHz high-speed switching power supply LSI directly into the board and includes all necessary components in a single package. High performance is ensured in the industry’s smallest* form factor. The all-in-one configuration eliminates the need for external components, simplifying design time. Additional features include a wide input voltage range, from 2.3V to 5.5V, making them suitable portable devices utilizing 5V USB, as well as an output voltage range between 1.0V and 3.3V, ensuring compatibility with a variety of sets. www.rohm.com/eu International Renewable Energy Exhibition and Congress Make a note: 15 – 18 March 2012 · Husum www.new-energy.de 48 Bodo´s Power Systems® March 2012 www.bodospower.com Medical AC-DC External Power Supplies TDK-Lambda Germany, a group company of the TDK Corporation, has introduced the DTM-C series of medically-certified AC-DC external power supplies – the DTM65-C model with output power ratings from 40 to 65W and the DTM110-C rated at 90 to 110W. Offered with a choice of output voltages from 12 to 48Vdc, the DTMC series operates from a universal AC input of 90 to 264Vac (47-63 Hz). With average efficiency greater than 87% and offload power consumption of less than 0.5W, all models in the DTM-C series comply with ErP (Energy Related Products), EISA (Energy Independence and Security Act of 2007), CEC (Californian Energy Commission) and Global Efficiency Level V regulations. These external power supplies are packaged in low profile, insulated enclosures and are convection cooled. The operating temperature range is from 0 up to 50°C (DTM65-C) and 0 to 40°C (DTM110-C) at full load without derating. With 4kVac input to output isolation, all models in the DTM-C series comply with UL/EN/IEC60601-1 Editions 2 & 3 safety approvals for medical equipment. www.emea.tdk-lambda.com www.bodospower.com March 2012 Bodo´s Power Systems® 49 NEW PRODUCTS 100-V Synchronous Buck Regulator with Integrated MOSFETs Texas Instruments Incorporated expands its high-voltage point-ofload product line by introducing today the industry’s first 100-V synchronous buck regulator with integrated MOSFETs. The 600-mA LM5017 is the first in a new family of step-down switching regulators that reduce PCB area and system cost while improving high-voltage reliability in telecommunication, industrial, smart grid and automotive systems. Used in conjunction with the award-winning WEBENCH® online design tool, the LM5017 simplifies high-voltage DC/DC conversion and speeds the design process. For more information, samples and evaluation boards, visit www.ti.com/lm5017-pr. The 600-mA LM5017, together with the 300mA LM5018 and 100-mA LM5019 available in April, enables direct point-of-load voltage regulation from input voltages as high as 100-V. This eliminates external transient voltage suppressors or clamps required to achieve reliable operation in high-voltage applications. Integrated MOSFETs eliminate freewheeling Schottky diodes and improve efficiency. Pin-compatible 4-mm by 4-mm LLP packaging offers a scalable solution that covers a wide range of power requirements. Constant on-time (COT) control architecture provides excellent load transient response with no loop compensation required, further reducing the PCB area and simplifying the power supply design process. Watch a video at www.ti.com/lm5017-prv. www.ti.com Power Your Recognition Instantly Based in Munich, Germany, ITPR Information-Travels Public Relations is a full-service consultancy with over a decade of experience in the electronics sector. As a small exclusive agency, we offer extremely high ROI, no-nonsense flexibility and highest priority to only a handful of companies. Strategical Support Corporate/Product Positioning, Market/Competitive Analysis, PR Programs, Roadmaps, Media Training, Business Development, Partnerships, Channel Marketing, Online Marketing Tactical PR Writing: Press Releases, Feature Articles, Commentaries, Case Studies, White Papers Organizing: Media Briefings, Road Shows, Product Placements in Reviews and Market Overviews, Exhibitions, Press Conferences Monitoring and Research: Speaking Opportunities, Editorial Calendars, Feature Placement, Media Coverage, Competitive Analysis Translations: Releases, By-Lined Articles, Websites, etc. Call or contact us today for a free consultation on how PR can dramatically affect your company’s bottom line. ITPR Information-Travels Public Relations Stefanusstrasse 6a, 82166 Gräfelfing-Munich, Germany Tel ++49 (89) 898687-20, Fax ++49 (89) 898687-21, electronics@information-travels.com www.information-travels.com 50 Bodo´s Power Systems® March 2012 www.bodospower.com CONTENTS Breakthrough 1200V UniSiC™ Stack-Cascode MOSFETs Alpha and Omega Semiconductor Limited (AOS), a designer, developer and global supplier of a broad range of power semiconductors, and SemiSouth Laboratories jointly demonstrated UniSiC™, a revolutionary 1200V, 90mÙ MOSFET in a TO262 package, to meet the growing need for energy efficient switching devices for high performance power conversion applications in the alternative energy, industrial and consumer segments. The dramatic reduction in form factor and figures-of-merit put this 1200V MOSFET device in a class by itself. AOS continues to execute its strategy to be a full service power solution provider by extending its portfolio of AlphaMOS™ MOSFETs and AlphaIGBT, devices with the revolutionary 1200V MOSFET solution described in this brief. The UniSiC™ MOSFET provides unprecedented low Rdson and gate charge Qg, an excellent body diode with virtually no stored charge and a low diode forward voltage drop. The device may be used similar to a conventional MOSFET or IGBT, with standard gate drives and is engineered so it can be switched over a wide speed range – as fast as a Superjunction MOSFET, or as slow as an IGBT. The device has far superior characteristics compared to existing IGBTs, Silicon power MOSFETs or even the best competitive SiC 1200V MOSFET. Key data is summarized in Table 1 and Figure 1 shows the die sizes of a 1200V IGBT with co-packaged diode, the 1200V competitor SiC MOSFET and the AOS UniSiC™ stack-cascode device. The small die size shows the tremendous potential this device creates for future miniaturization of power circuits given how much it cuts conduction and switching losses. The UniSiC™ device is formed by stacking a specially designed low voltage Silicon MOSFET atop a normally-on SiC JFET. The SiC JFET has excellent characteristics and is provided by SemiSouth, the leading supplier of SiC JFET technology. The low voltage MOSFET is specially engineered to allow optimal operation of the composite device with clean switching, low Rdson, gate charge and superb diode characteristics. It is intended to provide great ease of use, working with standard drive circuitry, and drastically improving circuit efficiencies over the whole range of load current. www.aosmd.com www.semisouth.com International Conference on Power Electronics, Machines and Drives 27-29 March 2012. University of Bristol, UK Conference highlights 3 over 250 presentations featuring the latest industrial and academic research on power electronics; machines and drives; transportation; renewable energy systems; generation, transmission and distribution and industrial applications 3 hear the views of leading keynote speakers Professor Frede Blaabjerg, Aalborg University and Gourab Majumdar, Senior Chief Engineer, Mitsubishi Electric Corp. 3 meet Cobham, Infolytica, John G Peck, MDL Technologies, Motor Design Ltd, Opal RT Europe, Plexim, PPM Power and TTP at the exhibition of key suppliers Sponsor Supported by Media Partners The Institution of Engineering and Technology is registered as a Charity in England & Wales (no 211014) and Scotland (no SCO38698). The Institution of Engineering and Technology, Michael Faraday House, Six Hills Way, Stevenage, SG1 2AY. See the full programme and register your place at www.theiet.org/pemd www.bodospower.com March 2012 Bodo´s Power Systems® 51 NEW PRODUCTS Lowest Capacitance Silicon ESD Devices for High-Data-Rate Applications TE Circuit Protection, a business unit of TE Connectivity, announces a family of eight new single-channel and multi-channel silicon ESD (SESD) protection devices offering the lowest capacitance (bi-directional: 0.10pF typical; uni-directional: 0.20pF typical), highest ESD protection (20kV air and contact discharge) and smallest size (multichannel: smallest flow-through form-factor and 0.31mm height) packages available on the market. The devices’ ultra-low-capacitance results in the industry’s lowest insertion loss, which is essential for maintaining signal integrity in ultra-high-speed applications. The devices help protect against damage caused by electrostatic discharge (ESD), surge and cable discharge events. The multi-channel devices also feature a flow-through design package that allows for matched impedance of PCB trace routing, which is essential for maintaining high-speed signal integrity. The ultra-low-capacitance, small size and high ESD kV rating of the SESD devices are well-suited for smart phones, HDTVs and similar consumer, auto and other markets’ products using today’s – and tomorrow’s – highest-speed interfaces such as USB 3.0/2.0, HDMI, eSATA, DisplayPort, and Thunderbolt. The single- and multi-channel SESD devices also feature an industryleading 20kV contact and air discharge rating, exceeding IEC61000-42’s 8kV industry standard. In the event of a high voltage ESD strike, this high kV rating helps minimize the risk of the ESD device failing short and permanently disabling the port, or open, exposing the downstream chipset to damage caused by another ESD strike. This capability helps reduce customer complaints and warranty repair costs. www.te.com FlatNoise™ Dual IF VGA for Multi-mode 4G Base Station Transceivers Integrated Device Technology, Inc. delivering essential mixed-signal semiconductor solutions, today announced the industry’s first FlatNoise dual intermediate frequency (IF) variable gain amplifier (VGA) for multi-mode 2G/3G/4G wireless base station transceivers. IDT’s devices offer the industry’s best noise figure (4 dB) for maximum gain and virtually no degradation when gain is reduced, improving qualityof-service (QoS) and easing the signal-to-noise ratio (SNR) requirements of the downstream data converter to reduce system cost. The IDT F1240 and F1241 are dual-channel digitally-controlled IF VGAs featuring IDT’s FlatNoise technology. This new technology virtually eliminates noise figure degradation for the critical top 13 dB section of a wide 31 dB gain control range – a stark contrast to other IF VGAs which typically exhibit a dB for dB degradation in noise figure as gain is reduced. FlatNoise eases the SNR requirements of the system’s data converter, enabling customers to improve signal quality and use a more cost-effective, lower-resolution data converter. For many applications, this allows the customer to downgrade from a 14-bit data converter to a 12-bit data converter with comparable system SNR. www.idt.com/go/RF 52 Bodo´s Power Systems® March 2012 www.bodospower.com International Exhibition and Conference for Power Electronics, Intelligent Motion, Power Quality Nuremberg, 8 – 10 May 2012 Powerful? …then you are right here! The marketplace for developers and innovators. Future starts here! pcim-europe.com Tutorials Monday, 7 May 2012 from 9 – 17.00 hrs International Conference and Exhibition for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Nuremberg, 8 – 10 May 2012 www.pcim.de Trends in Soft Switching Topologies Dan Jitaru, Delta Energy Systems, USA Advanced Design with MOSFET and IGBT Power Modules Tobias Reimann, ISLE Steuerungstechnik und Leistungselektronik GmbH, Germany Thomas Basler, Chemnitz University of Technology, Germany Controlling DC-DC Converters for Optimal Performance Richard Redl, ELFI S.A., Switzerland Electromagnetic Design of High Frequency Converters and Drives Jacques Laeuffer, Dtalents, France Conference, Seminar and Tutorial Program FPGA based Control of 2-level and 3-level Inverters Jens Onno Krah, Cologne University of Applied Sciences, Germany Switching Power Supply Analysis Ray Ridley, Ridley Engineering Europe, France Battery Charging for Electric Vehicles Dirk Uwe Sauer, RWTH Aachen, Germany What attendees say »An appointment with power electronics you can’t miss.« Alberto Riboni, Technical Director, Silap Power Management, Italy »An appointment with power electronics you can’t miss.« »PCIM gave me Technical a good overview of Silap the new developments in Alberto Riboni, Director, Power the area of power Italyelectronics and semiconductor application, Management, and is a great place for networking.« Ambra FACTS, Sweden »PCIM Sannino, gave me aR&D goodManager, overviewABB of the new developments in the area of power electronics and semiconductor application, »The is one of for thenetworking.« most important events to learn and isPCIM a great place about new technologies, maket trends and getSweden new impulses Ambra Sannino, R&D Manager, ABB FACTS, for my daily work.« Andreas Reiter, Development »The PCIM is oneBusiness of the most importantManager events toPower learn Electronics Europe, Microchip Germany about new technologies, maketTechnology, trends and get new impulses for my daily work.« »PCIM a well Business organizedDevelopment event where Manager I can get fresh AndreasisReiter, Power information, see new productsTechnology, and technologies, Electronics Europe, Microchip Germany discuss with the experts in the field and finally get some new ideas myorganized work.« event where I can get fresh »PCIM is a for well Henrik Lavric,see Researcher, University of Ljubljana, Slovenia information, new products and technologies, discuss with the experts in the field and finally get some new ideas for my work.« Power Electronics for Renewable Energy Systems Mike Meinhardt, SMA Solar Technology, Germany Siegfried Heier, Peter Zacharias, University of Kassel, Germany IGBT Gate Drive Technologies Reinhard Herzer, Arendt Wintrich, Semikron Elektronik, Germany High Frequency Conductor Losses in Switchmode Magnetics Bruce Carsten, Bruce Carsten Associates, USA Reliability of IGBT Power Modules Josef Lutz, Chemnitz University of Technology, Germany Seminars Sunday, 6 May 2012 from 14 – 17.30 hrs Batteries – Technologies, Charger Solutions, Monitoring and Management Systems Richard Redl, ELFI S.A., Switzerland Basics of Electromagnetic Compatibility (EMC) of Power Systems Jacques Laeuffer, Dtalents, France PCB Layout for Low EMI Bruce Carsten, Bruce Carsten Associates, USA PCIM Asia Exhibition and Conference 19 –21 June 2012, Shanghai, China www.pcimasia.com Frequency Response Measurements on Switching Power Supplies and Components Ray Ridley, Ridley Engineering Europe, France The Easy and Straight Way to Successful Presentation of Technical Content Mike Meinhardt, SMA Solar Technology, Germany PCIM South America Conference and Exhibition 11 – 13 September 2012, Sao Paulo, Brazil www.pcim-southamerica.com Wireless Power Technologies Dan Jitaru, Delta Energy Systems, USA Control of Micro Grids Josep Maria Guerrero, Aalborg University, Denmark Conference Registration info rmation and full program with all lectures , posters and sp eakers on www.pcim-eur ope.com/progr am Tuesday, 8 May 2012 Conference Opening and Award Ceremony K EY NOTE »Electrical Power Sub-systems on Satellites« Competition in Wide Badgap Devices Control of Converters and Drivers Advanced Silicon Power Devices Special Session FPGAs in Intelligent Motion I High Performance Motors and Electric Drives Progress in Wide Bandgap Technology Converters for Wind/ Hydraulic Energies Advanced Power Modules Current Sensing Power Quality Solutions Poster/Dialogue Session Wednesday, 9 May 2012 K EY NOTE »Solar Power« Special Session High Frequency Switching Technologies & Devices for Green Applications AC/DC Converters DC/DC Converters New Photovoltaic Energy Systems Gate Drives Reliability Cooling Power Electronics in Automotive, Traction and Aerospace Energy Storage Sensorless Drives Poster/Dialogue Session Thursday, 10 May 2012 K EY NOTE »Grid Integration of Renewables« (to be confirmed) Special Session E-Mobility and Battery Chargers High Power Converters New Materials for Power Electronics Control Techniques in Intelligent Motion Systems New Wide Bandgap Devices Wire Bonds in Power Modules High Power Devices Special Session FPGAs in Intelligent Motion II Our partners Sponsors Young Engineer Award Why you should attend PCIM Europe offers the unique opportunity to attend high-quality conference presentations and to experience the applications at the show floor within one event. The Conference experience the most application orientated conference for power electronics hear the leading experts presenting their latest technologies choose from more than 200 outstanding technical presentations benefit of plenty of networking opportunities and establish new contacts . to 100 Euro and save up . 12 Book early 20 pril ble until 3 A ion Rates availa m/registrat co e. op ur -e m ci .p w w w Mediapartners The Exhibition get an overview on new technologies, innovations and applications see the largest power electronics exhibition attend free panel-discussions and presentations at the exhibition forum The smthybridpackaging – systemintegration in microelectronics exhibition and conference is held in parallel to PCIM Europe. www.smt-exhibition.com Contact Mesago PCIM GmbH Ms. Bianca Steinmetz Rotebuehlstrasse 83–85, 70178 Stuttgart, Germany Phone: +49 711 61946-29 Fax: +49 711 61946-90 www.pcim.de pcim@mesago.com Board of Management Petra Haarburger, Johann Thoma, Udo Weller Amtsgericht Stuttgart; HRB 720222 Best Paper Award NEW PRODUCTS SCOTTSDALE S OT TT CHiL Digital PWM Controllers Delivers Smallest Footprint; Highest Multiphase Efficiency International Rectifier, IR® has launched its highly versatile family of CHiL digital PWM controllers that dramatically shrinks footprint and improves efficiency in a variety of mid-range to high-end and extreme server, desktop, and computing applications. IR’s six new devices meet Intel VR12 and VR12.5 and AMD SVI1 and SVI2 specifications, and support multiphase designs from 1 to 8 phases operating 1 to 2 loops. These third generation CHiL devices offer efficiency shaping features such as phase shedding and variable gate drive with enhanced algorithms including PID scaling (when shedding phases) and phase current balancing to ensure maximum efficiency. The solution architecture supports the extremely high di/dt transients from high-end processors, and, as a result of a new Adaptive Transient Algorithm (ATA), the transients can be met with fewer phases and fewer capacitors to shrink system size. Call For Papers INTELEC® 2012 September 30 - October 4, 2012 Talking Stick Resort and Conference Center Scottsdale, Arizona INTELEC©, International Telecommunications Energy Conference, is the annual world-class technical forum that serves the broad community of researchers, suppliers and operators, explores new technologies of power conversion, energy storage and systems for telecom applications and environment. The conference program will include key note and plenary sessions, technical presentations, workshops and poster sessions. Manuscripts of accepted paper will be included in the conference proceedings. Submit your 500 word to 1500 word digest on line by March 16, 2012 at www.intelec.org/intelec2012 or http://submissions.miracd.com/intelec2012 For more information, visit us online at: www.intelec.org The CHiL digital PWM controllers feature a 30 percent reduction in operating current to help meet higher efficiency goals during low-load operation. For protection of high-end circuits, the devices offer improved pulse-by-pulse current limit protection, controlled pulse width limiting a new phase imbalance/phase missing fault feature. The devices fully support phase doubling using IR’s IR3598 to drive two phases from each PWM output. The devices also sense 12V, 5V and 3.3V supplies without special sequencing and feature PMBUS telemetry. www.irf.com ADVERTISING INDEX ABB Semi Berquist Cirrus CT Concept Technologie Danfoss Electronicon Fairchild Fuji GVA Infineon Intelec International Rectifier 56 Bodo´s Power Systems® C3 33 35 21 23 41 3 31 C2 13 56 C4 Intersil IR ITPR IXYS Lem Magna Power Mitsubishi New Energy Husum Omicron PCIM PEMD CFP Pem UK March 2012 11 C4 50 39 5 43 15 48 25 53-55 51 47 Powerex Premo Proton Richardson Rogers Semikron SMT Summit VDI VMI Würth Yokogawa 19 49 27 17 1 29 46 7+9 37 49 47 45 www.bodospower.com HiPak TM. Superior reliability in high power IGBT packaging. Perfect soldering is one of the major requirements in producing reliable modules with high life expectancy. All ABB modules undergo intensive scrutiny including X-ray analysis and acoustic microscopy to ensure highest quality. This is only one of many process control steps towards operational excellence. For more information please visit our webpage: www.abb.com/semiconductors ABB Switzerland Ltd ABB s.r.o. www.abb.com/semiconductors m.abb.com Power and productivity for a better world™ High-Voltage Buck Control ICs for Constant LED Current Regulation EMI Filter Rectifier IC and Switches LEDs Line IC IRPLLED7 Demo Board IRPLLED7 Demo Board LED Current vs Input Voltage 390 Current (mA) 380 370 360 340 LED Current (mA) 320 310 60 70 80 90 100 110 120 130 140 150 160 170 180 IRS2980 IRS2980 Benefits s,OWCOMPONENTCOUNT s/FFLINEOPERATION s6ERYSIMPLEDESIGN s)NHERENTSTABILITY s)NHERENTSHORTCIRCUITPROTECTION 350 330 LEDrivIR™ IRS2980 Features s)NTERNALHIGHVOLTAGEREGULATOR s(YSTERETICCURRENTCONTROL s(IGHSIDECURRENTSENSING s07-DIMMINGWITHANALOGOR07CONTROLINPUT s&REERUNNINGFREQUENCYWITHMAXIMUM LIMITINGK(Z Input Voltage Part Number Package Voltage Gate Drive Current Startup Current Frequency IRS2980S SO-8 450V +180 / -260 mA <250 μA <150 kHz IRS25401S SO-8 200V +500 / -700 mA <500 μA <500 kHz IRS25411S SO-8 600V +500 / -700 mA <500 μA <500 kHz For more information call +49 (0) 6102 884 311 or visit us at www.irf.com Demo Board Specifications s)NPUT6OLTAGE6TO6!# s/UTPUT6OLTAGE6TO6$# s2EGULATED/UTPUT#URRENTM! s0OWER&ACTOR s,OWCOMPONENTCOUNT s$IMMABLETO s.ONISOLATED"UCKREGULATOR THE POWER MANAGEMENT LEADER