Study Guide, Module 2
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MULTIPLE CHOICE. Choose the one alternative that best completes the statement or answers the question.
1) For an n-channel JFFT, IDSS = 8 mA, and V P = -6 V. If V GS = -2 V. What is the value of the drain
1)
current ID?
A) 3.56 mA
B) 4.5 mA
C) 5.33 mA
D) 2.666 mA
2) For an n-channel depletion MOSFET IDSS = 8 mA and V P = -6 V. If ID= 0.0095 A, what is the
value of the gate-to-source voltage, V GS?
A) -0.54 V
B) 0.54 V
C) 0.1335 V
D) 6.54 V
3) For V GS < V TH in an enhancement MOSFET the drain current will be ________.
A) 1.0 µA
C) -1.0 µA
B) 10.0 µA
2)
3)
D) zero
4) A CMOS inverter is biased with a +10-V V SS supply. The input to the inverter varies between 0 V
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and +10 V. When the input to the inverter is +10 V, the output from the circuit is ________.
A) zero
B) +10 V
C) -10 V
D) The circuit cannot have an input voltage that is equal to the supply voltage.
5) The JFET is a ________.
A) current-controlled device
C) voltage-controlled device
5)
B) power-controlled device
D) frequency-controlled device
6) What two parameters represent the FET transfer characteristic?
A) drain-to-source voltage and gate-to-source voltage
B) gate-to-source voltage and drain current
C) drain-to-source voltage and drain current
D) gate current and drain current
6)
7) A D-MOSFET' has values of ID = 15.63 mA, V P = -4 V, and V GS = +1 V. What is the value of
7)
IDSS?
A) 5 mA
C) 0 mA
B) 10 mA
D) None of the above
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8) Calculate the drain-gate voltage for this voltage-divider bias circuit if IDQ = 2.8 mA .
A) V DG = 8.42 V
B) V DG = 5.42 V
C) V DG = 6.42 V
D) V DG = 7.42 V
9) Calculate the quintessential point for this self-bias depletion mode MOSFET.
A) IDQ = 4.6 mA, VGSQ = -1.87 V
C) IDQ = 1.85 mA, VGSQ = -1.87 V
8)
9)
B) IDQ = 4.6 mA , VGSQ = -2.5 V
D) IDQ = 1.85 mA, VGSQ = 2.5 V
10) In the enhancement type of MOSFET the channel is formed when the gate-to-source voltage
________.
A) exceeds the threshold voltage
B) exceeds the pinch-off voltage
C) is less than the pinch-off voltage
D) is less than the threshold voltage
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10)
11) Calculate the output impedance for this FET amplifier.
A) Zo = R D = 2.1 kΩ
C) Zo = rd = 90 kΩ
11)
B) Zo depends on the drain current ID.
D) Zo = RS  rd = 3052 Ω
12) Design this circuit for a voltage gain of 10. You have to calculate the value of resistors RD and RS.
12)
It is desired that the transistor operate with a relatively high value of gm . For this device, a high
value of gm is defined as V GS = 0.2 V P.
A) RD = 9.0 kΩ, RS = 250 Ω
C) RD = 5.555 kΩ, RS = 1.0 kΩ
B) RD = 9.0 kΩ, R S = 1.0 kΩ
D) RD = 5.555 kΩ, RS = 250 Ω
13) A JFET has values of gmo= 1200 µ.S and V GSOFF = -4 V. What is the approximate value of IDSS?
A) 4.8 mA
B) 2.4 mA
C) 9.6 mA
D) Cannot be determined from the information given
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Answer Key
Testname: SG_MODULE2
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