VISHAY INTERTECHNOLOGY, INC. VISHAY Vishay Semiconductors RF MOS TRANSISTORS (1) SOT143 (2) SOT143R DrainSource Voltage Forward Transadmittance Gate 1 Input Capacitance Power Gain VDS / V y21s / mS Cissg1 / pF GP / dB (3) SOT23 Test Frequency @ f / MHz Noise Figure F / dB @ Test Frequency (4) SOT343R (5) SOT363 Part Number(s) f / MHz Dual-Gate Si-MOSFETs (N-Channel Depletion Mode) 15 15 15 8 18.5 18.5 15 24 2.5 2.2 3.7 2.1 25 18 20 20 200 800 200 800 1.0 1.8 1.8 1.5 200 800 200 800 BF994S1 BF996S1 BF9951 BF9981, BF998R2, BF998RW4 1.0 1.0 200 200 BF5433 S525T3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.5 1.3 800 800 800 800 800 800 800 800 800 800 800 800 S849T1, S849TR2 S886T1, S886TR2 S913T1, S913TR2, S913TRW4 S949T1, S949TR2, S949TRW4 S504T1, S504TR2, S504TRW4, S594T1, S594TR2, S594TRW4 S504TX1, S504TXR2, S504TXRW4, S594TX1, S594TXR2, S594TXRW4 S505T1, S505TR2, S505TRW4, S595T1, S595TR2, S595TRW4 S505TX1, S505TXR2, S505TXRW4, S595TX1, S595TXR2, S595TXRW4 S503T1, S503TR2, S503TRW4, S593T1, S593TR2, S593TRW4 S503TX1, S503TXR2, S503TXRW4, S593TX1, S593TXR2, S593TXRW4 S506TY1, S506TYR2, S506TYRW4 S505TY1, S505TYR2, S505TYRW4 800 800 800 800 800 800 TSDF524245 TSDF02424X5, TSDF02424XR5, TSDF52424X5, TSDF52424XR5 TSDF530305 TSDF03030X5, TSDF03030XR5, TSDF53030X5, TSDF53030XR5 TSDF540405 TSDF04040X5, TSDF04040XR5, TSDF54040X5, TSDF54040XR5 TSDF02830Y5, TSDF02830YR5, TSDF02830YL5 Single-Gate Si-MOSFETs (N-Channel Depletion Mode) 10 10 12 16 2.7 2.7 22 25 200 200 MOSMICì (MOS Monolithic Integrated Circuit) - Series 24 30 24 30 24 24 30 30 40 40 25 31 2.1 2.5 2.1 2.5 2.1 1.6 2.5 1.8 3.2 2.3 2.5 1.9 20 22 20 21 20 21 20 22 23 24 22 25 800 800 800 800 800 800 800 800 800 800 800 800 Dual-MOSMICì (MOS Monolithic Integrated Circuit) - Series www.vishay.com 5 5 5 5 5 5 3-5 24 24 30 30 40 40 28/31 2.1 1.7 2.4 2.0 2.7 2.4 2.5/1.9 20 21 21 22 23 24 22/25 800 800 800 800 800 800 800 1.3 1.3 1.3 1.3 1.3 1.3 1.5/1.3 SELECTOR GUIDE 12 12 9 9 5 5 5 5 5 5 3-5 3-5 Vishay Semiconductors RF MOS TRANSISTORS 1.0 (1) SOT143 G2 D D G G2 2.85 G1 D 1.25 G2 G1 D G1 S S 1.25 D G1 (2) SOT143R S 1.0 S Single Gate MOSFET Dual Gate MOSFET MOSMICì 2.85 Dual MOSMICì Vishay Semiconductors is one of the leading suppliers of RF MOS Transistor solutions in RF front-end applications ranging in operating frequencies up to 800 MHz, used in TV and CATV tuners or satellite receivers. Special application required technologies had to be developed for the Dual Gate MOSFET-, MOSMICìand Dual MOSMICì-series. These products are predestined for the input stage of tuners as they offer the smallest high performance product for such applications. Here characteristics such as low noise, high gain, high linearity, low voltage, high cross and intermodulation performance, low phase noise, gain controllability, and low power in the smallest of packages are a must. 1.0 (3) SOT23 2.85 1.25 1.25 (4) SOT343R 0.9 FEATURES APPLICATIONS • Superior Cross Modulation performance • Wide AGC range • Low noise figures • High gain • Integrated Gate Protection • Standard SMD packages • Input and mixer stages in tuners • Low noise gain contolled preamplifiers • UHF and VHF tuners 2.05 1.25 (5) SOT363 0.9 2.05 For further technical information, please contact: rf-trans@vishay.com or visit our web site. WORLDWIDE SALES CONTACTS www.vishay.com THE AMERICAS ASIA JAPAN EUROPE VISHAY AMERICAS UNITED STATES PH:+1-402-563-6866 FAX:+1-402-563-6296 VISHAY INTERTECHNOLOGY ASIA PTE LTD. SINGAPORE PH:+65-6788-6668 FAX:+65-6788-0988 VISHAY JAPAN CO LTD. JAPAN PH:+81-3-5464-6411 FAX:+81-3-5464-6433 VISHAY ELECTRONIC GMBH GERMANY PH:+49-9287-71-0 FAX:+49-9287-70435 VISHAY S.A. FRANCE PH:+33-1-39-98-22-00 FAX:+33-1-39-98-22-05 VISHAY LTD. GREAT BRITAIN PH:+44-191-514-4155 FAX:+44-191-567-8262 MANUFACTURER OF THE WORLD'S BROADEST LINE OF DISCRETE SEMICONDUCTORS AND PASSIVE COMPONENTS VHN-SG1303-0309