CAT.No.U０２９-４
SILICON
SURGE PROTECTOR
SHINDENGEN
ELECTRIC MFG. CO., LTD.
SILICON SURGE PROTECTOR
■The products shown in this catalog are intended for use in standard
applications requiring normal，commercial levels of reliability. lf these
products are to be used in equipment or devices requiring special or specific
levels of quality and reliability in which failure or malfunction of a product may
directly affect human life or health，contact the local SHINDENGEN office to
confirm that the intended use of the product is appropriate.
The quality levels of our products are defined below：
Standard Applications
Computers， office automation， communication terminals， test and
measurement instrumentation，AV equipment，video games and related
amusement equipment，home appliances，machine tooIs，industrial robots，
personal equipment，etc.
Special AppIications
Transportation（ automotive， marine， etc.） trunk-line communication，
traffic signal equipment，commercial fire prevention/anti-theft equipment，
various safety devices，medical equipment，etc.
Specific Applications
Nuclear power controIs，aerospace and aeronautical equipment，submarine
relay equipment，devices and systems for preserving life，etc.
■Although efforts are constantIy made to improve quality and reliability，please
select a product after careful examination so that personal injury，accidents
and social damage can be prevented as a result of deploying measures such
as a redundant design，designs that prevent the spreading of fire，designs
that prevent malfunctions and so forth while taking safety into consideration
as necessary.
One of the most important issues regarding the construction of a high-level
information system is to protect the electronic equipment and systems against
various disasters.
SHINDENGEN is proud to introduce our line of high-performance Silicon Surge
Protectors，which are suited to a wide variety of digitaI applications. These products
are based on semiconductor device technology deveIoped over many years in the
industry. SHINDENGEN offers three series of surge protectors for specific
applications where they are used to protect a variety of system loads against
abnormal voItages such as transient surges induced by lightning strikes. Designed for
use in a broad range of products，these surge protectors are available in a number
mounting styles from a wide variety of packages.
CONTENTS
１. Outline …………………………………………………………………２
２. Surge Types and Characteristics …………………………………３
３. Applications …………………………………………………………４
４. Features ………………………………………………………………４
５. Examples of Basic Protection Circuit ……………………………４
６. Arrangement of Selecting
Thyristor Surge Suppressor（TSS）…………………………………５
Silicon Surge Protector …………………………………………………６
SymboIs and Terms ……………………………………………………７
Naming Rule for Type Numbers ………………………………………８
Quick Reference（Series Ratings Table） ……………………………９
Package Outline and Soldering Pad …………………………………16
Technical Information …………………………………………………18
Product Data ……………………………………………………………26
TSS………………………………………………………………………26
TrankilIer ………………………………………………………………86
Silicon Varistor ………………………………………………………102
Basic ordering Quantities and Packing Standards ………………114
Standard Package ……………………………………………………115
1
1．Outline
There are two types of devices that are used to protect electronic equipment against transient surge voltage. 0ne，is the diodetype surge protective device that operates by voltage clamping using the forward voltage drop or using the reverse avalanche
breakdown of the silicon PN junction. The other is a thyristor-type surge suppressor（TSS）
，that operates by diverting current and
is comprised of a silicon PNPN junction.
Diode-type surge protective device operating by voltage clamping is divided into silicon varistor type and avalanche（Zener）type.
TSS， which has attracted considerable attention in recent years as a new type of device for protection against surge voltage，
consists of a bi-directional type that operates bi-directions with two terminals，and reverse conducting type.
ln the past，protection against overvoltage and other forms of abnormal voltages was mainly provided by gas discharge tube
（GDT）and metal oxide varistor（MOV）
.
However，since various types of communication devices and electronic equipment systems that support the high-level
information intensive society of today contain numerous ICs and LSIs，they are fragile against surge voltages and abnormal
voltages induced by lightning strikes and noise. Thus，there is a need for surge protective device that feature reliable protective
operation and high reliability.
The following describes the technical characteristics of silicon surge protector.
（１）
Rapid response to abnormal voltage(see Fig.1).
ln comparison with conventional protective devices（MOV，GDT），silicon surge protective devices exhibit adequate suppressing
effects against surge voltage，promoting simplification of protective circuits as well as reduced circuit size（see Fig.2）
.
（２）
Because silicon surge protective devices being based on the operating principle of the solidstate silicon，there is no
degradation and the devices are essentially maintenance-free.
The resulting free from maintenance work during use of conventional devices（MOV，GDT）results in significant economic benefits.
（３）
The operating mechanism at the PN junction offers the advantages of precision design of bi-directional，unidirectional and
switching operations，making it possible to offer a wide selection of devices according to the desired circuit voltage.
SHINDENGEN offers a complete lineup of surge protector over the range of 2V to 500V.
(a)Example of a conventional multi-stage protection circuit
Surge
voltage
Applied surge waveform
MOV
MOV
Si type
GDT
Silicon avalanche type（VSSPD）
GDT
L1
L2
(b)Example of the use of a silicon surge protective devices
L1
Silicon thyristor type（TSS）
Time
Si type
MOV
GDT
Fig.1 Response waveforms of various types of surge
protective device
2
L2
Fig.2 Examples of protection circuits
2．Surge Types and Characteristics
Typical examples of noise and surges that affect electronic equipment are shown in Table 1 and Fig.3.
There are various patterns in which noise and surges occur，including transient surge induced by lightning strikes，the transient/burst
surge generated by electronic equipment itself，and the electromagnetic wave noise that is induced artificially such as during a nuclear
explosion. It is necessary to understand their properties and study the paths by which they enter electronic equipment，in order to select
the most effective type of device for protection.
In today's sophisticated equipment，it is necessary not only to prevent shortening insulation resistance within the equipment caused
by high-energy surges，but also to prevent shortening and misoperations caused by surge that，although may be of a low energy level，
has extremely rapid rise-time and contains high frequency surge，a typical example of which is electrostatic surge.
Conventional MOV and GDT used for protection against surge voltages have the following dis-advantages.
1.Wide tolerance in operating voltage
2.Slow response speed
3.High capacitance resulting in the risk of deterioration of transmission quality
4.Inferior impuIse durability；degradation caused by repetition surge
ln the past，the high-speed response characteristics of silicon were observed，as a result，silicon surge protectors have come to be
used in various fields as ideal devices for protection against surge voltages.
SHINDENGEN provides a compIete family of silicon surge protective devices that satisfy the needs of today's electronic equipment.
Type of Surge
Infiltration Path of Surge
Feature of Surge
Direct Lightning
High-voltage power-lines
Unpredictable，Unpreventable
lnduced Surge
AC power lines，Telephone-lines，Communication lines
Slow rise，High energy
Electrostatic Discharge
DC power lines，Signal lines
Rapid rise，High-peak-voltage
ImpuIse Surge
DC power lines，Signal lines
Rapid rise，Relatively high energy
AC／DC power lines，lnductive-load，Relay contacts
Rapid rise
Automobile engines，Control unit
Rapid rise，High energy
Electrical Fast Transient Burst
Load Dump
Table 1 Surge types and feature
100
NEMP
（Nuclear Electro-magnetic Pulse）
Voltage〔kV〕
10
1
Induced
Surge
0.1
Electrostatic
Discharge
Impulse Surge／GFT Burst
Load Dump
1k
1M
Frequency〔Hz〕
10M
Fig.3 Surge voltage vs frequency
3
3．Applications
（１）Protection of integrated data system and communication systems from any type of surge(central office exchangers，PBX，DSU，
OCU，digital telephones，facsimiles，modems，multi-media equipment，radio-controlled equipment，etc）
（２）Protection of CATV and data transmission equipment from any type of surge
（３）Protection of communication lines from AC power cross
（４）Protection of various ICs，LSIs and other semiconductor integrated circuits
4．Features
（１）The use of current diverting type makes these devices perfect for protection of data and communication lines.
（２）Fast response and reliable clamping operation.
（３）Wide range of product variations enables these devices to be selected for each application.
Maximum surge on-state current class：30，40，100，150 and 400 A（10／1000μs）
Breakover voltage range：2V to 500V
（４）Reliable operation eliminates the need for multi-stage protection and operation coordinated components.
（５）Compact size and high reliability（SMD are available）.
（６）Bi-directional/Uni-directional characteristics and low Capacitance.
5．Examples of Basic Protection Circuits
（１）TSS
（４）Telephone circuit (Analog IC telephone)
①Line／Ground protection
Electric
Equip ment
Ringer
Circuit
l1
l2
Subscriber
line circuit
②Line／Line protection
Electric
Equip ment
（５）ISDN equipment
PT
（２）Trankiller
q LSI protection
Reg
L
S
I
L
S
I
Detective
circuit
（３）Varistor
qSignal protection
L
S
I
4
DC
power
source
6．Arrangement of Selecting Thyristor Surge Suppressor(TSS)
The optimum device can be selected by using the method described below. The following explanation is described with the schematic
diagram shown in Fig.4 and with the OFF operation characteristics diagram shown in Fig.5.
Step 1
Step 2
Step 3
Step 4
Determine off-State voltage from the maximum power supply voltage，VB，applied to the devices shown in Fig.4. Offstate voltage VDRM Should be selected to guarantee the non-operating under normal conditions.
Determine clamping voltage，VCL．
Clamping voltage is determined the maximum withstand voltage of the circuit to be protected.(withstand voltage of
the IC or LSl）
Determine surge on-state current，ITSM .
Determine the surge on-state current of the device from the surge current waveform predicted in advance.
Determine holding current，IH.
Calculate value of short circuit current iL from the power supply voltage and circuit impedance RL shown in Fig.4，and
guarantee self-reset-operation of the TSS in the form of i L＜IH，however，since holding current IH varies according to
temperature，please refer to the temperature characteristics diagram of holding current IH，while taking into
consideration the ambient temperature at which the device is to be used.
{in the case of iL＞IH in Fig.5，the load line will move when surge current decreases so that the operating point moves
from point（b）to point（c）self-reset to point（a）will not be performed and the device will remain in the on state.}
Confirm junction capacitance Cj．
If the signal frequency is high，Signal degradation may occur.Please check the junction capacitance Cj of the device.
Point(b)
iSURGE
iL
RL
Electric
Equipment
I
Step 5
Determine off-state voltage，VDRM .
RL
Point(c)
VB
TSS
iL
IH
Point(a)
V
VB
Fig.4 Schematic diagram
VSURGE
Fig.5 Operation characteristics of TSS
5
Silicon Surge Protector
●High surge on-state current capability and fastresponse time
●Reliable clamping operation and bi-directional
characteristics
●SMD packages available
●Compact size and high reliability
Thyristor Surge
Suppressor（TSS）
●Three-terminal，fully molded insulated type
●Two-circuit configuration for improved mounting
efficiency
●High surge on-state current capability and fastresponse time
●Reliable clamping operation and bi-directional
characteristics
●Axial lead type
●Compact size and large surge on-state current
capability
●Maintenance-free
●Reliable clamping operation and bi-directional
characteristics
●Voltage clamping characteristics offering both
excellent low-clamping voltage and fast response
●SMD types
●Compact size and high reliability
Silicon Surge
Protectors
Trankiller
(Avalanche
Breakdown Diode)
●Axial lead，voltage clamping type
●Compact outline-size and high reliability
●Surge protective devices for various types of
electronic equipment used in automobile electronics
●Compatible with JASO- A standards
●Perfect for protection against load dump
●Surge on-state current capability of 7kW
（10／1000μs）
Silicon Varistor
●Optimum for protecting signal lines
●Low capacitance
●Clamping voltage of 15V using high-density pileup-technology
●Bi-directional，SMD type
●Optimum for anti-noise measures in telephone
networks
●Low-clamping voltage and high reliability
●Axial lead type
●Low capacitance
1.Fast-response speed for stable protective characteristics.
2.Three types of surge protective devices are available to match the specific application：
TSS - KL，KP，KA，KT and KU series
Trankillers-ST series
Silicon varistors-VR series
3.Various packages are available to accommodate a wide range of mounting types，including SMD.
4.Please confirm minimum order and delivery about ☆ New product.
5.Please confirm sample schedule.
6
Symbols and Terms
1. Common Terms
Tstg
Storage Temperature
Tj
Junction Temperature
VBR
Breakdown Voltage
VRM
Maximum Reverse Voltage
IR
Reverse Current
VCL
Clamping Voltage
Cj
Junction Capacitance
f
Frequency
2. Thyristor Surge Suppressor（TSS）
VDRM
Maximum Off - State Voltage
ITSM
Surge On-State Current
VBO
Breakover Voltage
IDRM
Off-State Current
IH
Holding Current
VT
On-State Voltage
IT
On-State Current
VD
Off-State Applied Voltage
3. Trankiller
I RSM
Peak Surge Reverse Current
I PP
Peak Pulse Current
tP
Pulse Width
VR
Reverse Applied Voltage
4. Varistor
IO
Average Rectified Forward Current
IFSM
Peak Surge Forward Current
VF
Forward Voltage
P
Power Dissipation
θja
Thermal Resistance Junction to Ambient
Ta
Ambient Temperature
7
Naming Rule for Type Numbers
1.Thyristor Surge Suppressor(TSS)
KP 15 N □ □□ □
Blank：Conventional type（negative-slope）
N ：Novel type（positive-slope）
VBO（standard value）
Blank：Bi-directional type
U ：Uni-directional type
Breakover voltage VBO class：
Z：∼50V
L：50∼100V
N：100∼200V
R：200∼300V
S：300V∼
ITSM（10／1000μs）
Examples 3：30A
15：150A
40：400A
TSS type of package.
Examples KP：2F package（SMD）
KT：Insulated full mold（TO-221）
KL：1F package（SMD）
KA：Axial device
KU：DO214AA（M2F）Package（SMD）
2．
Trankiller
ST 04 - 16 □
Blank：Axial device
F1，F2：
（SMD）
VBR（Center value）
Example 16：16V
PRSM（10／1000μs）
Examples 04：400W
70：7000W
Trankiller ST：Llni-directional
DL：Bi-directional
3.Silicon Varistor
VR YA - 6
VF class
Package type
Silicon varistors（VR）
8
Quick Reference(Series Ratings Table)
■KL Series
2.0
2.5±0.3
1.5±0.2
64
08
2.0
2.5±0.3
1.5±0.2
Reverse conductive type （KL3LU08）
64
14
Package : 1F
2.0
2.0
4.2
Date code
4.2
Date code
Type No.,Class
Type No.,Class
Standard soldering pad
Standard soldering pad
5.0±0.3
1.2±0.3
KL3Z
ITSM
〔A〕
IH
Cj
〔mA〕
〔pF〕
Pulse measurement(Peak hold)
10/1000μs Non-repetitive
8/20μs
Pulse measurement
f=1kHz OSC=1Vrms VD＝50V
KL3N
KL3R
18
07
14
20
25★
5
＊1
（5.5）
15
＊1
（15.5）
58
65
30
120
130
175
180
190
220
150
50
100＊2
Z1
57
Marking
page
KL3L☆
07
Ratings, Conditions
〔V〕
〔V〕
0.1±0.1
Unit：mm
Type No.
VDRM
VBO
1.2±0.3
2.0±0.3
0.9
0.1±0.1
2.0±0.3
1.2±0.3
0.2
1.2±0.3
0.2
0.9
5.0±0.3
Z2
62
90
100
100
50
07
64
14
65
☆
30
20
62
25
62
26
28
30
32
−
＊1 VBR ＊2 OSC=20mVrms VD=0V ★：Under development ☆：New product
■KP Series
2.5
2.0±0.1
4.0±0.3
10N
14
82
Package : 2F
2.5
Type No.
6.1
Date code
Class
Standard soldering pad
C0.8
1.6±0.3
1.6±0.3
Unit：mm
KP4L
Type No.
Ratings, Conditions
VDRM
VBO
〔V〕
〔V〕
ITSM
〔A〕
IH
Cj
〔mA〕
〔pF〕
Pulse measurement(Peak hold)
10/1000μs Non-repetitive
8/20μs
Pulse measurement
f=1kHz OSC=1Vrms VD＝50V
Marking
page
0.1±0.1
2.8±0.3
1.5
0.2
7.6±0.3
KP4N
KP10L
KP10N
07
08★
12
14★
06
07
08
12☆
14
58
65
63
70
100
110
120
130
48
55
58
65
63
70
100
250
100
110
120
130
40
150
100
90
50
180
4L
7
19
4L
8
19
4N
12
18
4N
14
18
34
−
36
−
10L
6
19
10L
7
19
140
10L
8
19
10N
12
19
10N
14
19
38
40
★：Under development ☆：New product
9
Quick Reference(Series Ratings Table)
2.5
4.0±0.3
2.0±0.1
10R
25
13
Package : 2F
2.5
Type No.
6.1
Date code
Class
Standard soldering pad
C0.8
1.6±0.3
1.6±0.3
Unit：mm
KP10R
Type No.
〔V〕
〔V〕
ITSM
〔A〕
IH
Cj
〔mA〕
〔pF〕
Pulse measurement(Peak hold)
10/1000μs Non-repetitive
8/20μs
Pulse measurement
f=1kHz OSC=1Vrms VD＝50V
KP15L
KP15N
KP15R
25
07★
08☆
12★
14
25
190
220
100
250
58
65
63
70
100
110
120
130
190
220
Ratings, Conditions
VDRM
VBO
0.1±0.1
2.8±0.3
1.5
0.2
7.6±0.3
150
300
100
90
Marking
320
200
10R
25
19
15L
7
19
15L
8
19
42
−
44
−
46
48
★：Under development ☆：New product
page
15N
12
15
150
15N
14
15
15R
25
19
Type No.
2.5
4.0±0.3
Reverse conductive type
2.0±0.1
10L
U07
62
Package : 2F
2.5
6.1
Date code
Class
Standard soldering pad
C0.8
Type No.
Ratings, Conditions
〔V〕
〔V〕
ITSM
〔A〕
IH
Cj
〔mA〕
〔pF〕
0.1±0.1
2.8±0.3
KP8LU
KP10LU
07
07
58
IBR=1mA
10/1000μs Non-repetitive
8/20μs
Pulse measurement
f=1kHz OSC=20Vrms VD＝50V
Marking
page
10
Unit：mm
1.6±0.3
1.6±0.3
VDRM
VBO
1.5
0.2
7.6±0.3
65
80
200
62
100
250
100
100
180
8L
U07
63
10L
U07
63
50
52
Quick Reference(Series Ratings Table)
■KA Series
Package : AX06
Package : AX10
Axial type
φ1.0±0.05
KA10 Series
φ0.6±0.05
KA3Z Series
27.5±2
＋0.5
5−0
φ2.6±0.1
27.5±2
+0.2
7＋0.5
−0
26.5±2
φ4.4 -0.1
26.5±2
Unit：mm
KA3Z
Type No.
07
18
25
5
5.5＊2
15
＊2
15.5
190
220
100
250
100
90
KZ 67
10R5 09
Ratings, Conditions
VDRM
VBO
〔V〕
〔V〕
ITSM
〔A〕
IH
Cj
〔mA〕
〔pF〕
Pulse measurement(Peak hold)
10/1000μs Non-repetitive
8/20μs
Pulse measurement
f=1kHz OSC=1Vrms VD＝50V
KA10R
30
150
50
100＊1
Marking
KZ 61
page
54
56
＊1：OSC=20mVrms VD=0V ＊2：VBR ■KT Series
Package : TO-221
3.5±0.2
10±0.3
3.5±0.2
10±0.3
KT40 Series
14 46
KT40N
14 4N
Class
Date code
②
1.4±0.2
12.5±0.5
1.4±0.2
Date code
1.4±0.2
Class
1.4±0.2
9±0.3
Type No.
12.5±0.5
KT10N
1.0±0.2
Type No.
9±0.3
KT10、15 Series
②
①
②
③
①
0.7±0.2
0.7±0.2
2.54±0.2
2.54±0.2
0.4±0.2
③
2.54±0.2
1±0.3
2.54±0.2
1±0.3
0.4±0.2
Unit：mm
① ② ③
Type No.
Ratings, Conditions
VDRM
VBO
〔V〕
〔V〕
ITSM
〔A〕
IH
〔mA〕
Cj
〔pF〕
Tarminal No. Pulse measurement(Peak hold)
10/1000μs Non-repetitive
8/20μs
Pulse measurement
f=1kHz OSC=1Vrms VD＝50V
Marking
page
③
①
KT10L
KT10N
KT10R☆ KT15N KT15R KT40N KT40R★
07
08
12★
14
25
14
25
14
23
58
65
63
70
100
110
120
130
190
220
120
130
190
220
120
130
170
220
100
250
180
KT10L
08 65
58
150
300
100
140
90
1−2、3−2
KT10N
14 65
KT10R
25 65
200
90
KT15N
14 65
KT15R
25 65
400
1000＊
200
300
200
1−3
KT40N
14 65
KT40R
23 65
−
60
62
64
66
68
−
＊：15/100μs ★：Under development ☆：New product
11
Quick Reference(Series Ratings Table)
■KU Series（UL497B Lisited File No. E183905）
Package : M2F
KU10L06
Type No.
Class
2.29
1.78
2.29
3.75±0.3
2.0±0.2
K10
0674
1.78
Standard soldering pad
Date code
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
Ratings, Conditions
〔V〕
〔V〕
ITSM
〔A〕
IH
Cj
〔mA〕
〔pF〕
KU5N
KU5L★
Type No.
VDRM
VBO
Unit：mm
Pulse measurement(Peak hold)
10/1000μs 8/20μs
Pulse measurement
f=1MHz OSC=1Vrms VD＝50V
KU5R
08
12
14
29N
06
07★
08
58
65
63
70
100
110
120
130
250
275
50
150
100
50
48
55
58
65
100
250
100
180
63
70
K05
1282
K05
1482
K05N
2991
K10
0682
K10
0782
K10
0882
70
−
★
☆
50
150
100
90
K05
0782
Marking
page
50
K05
0882
−
Package : M2F
KU10L
07
☆
★
72
−
74
★：Under development ☆：New product
KU15N14
Type No.
Class
2.29
1.78
2.29
3.75±0.3
2.0±0.2
K15
1482
1.78
Standard soldering pad
Date code
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
Type No.
VDRM
VBO
〔V〕
〔V〕
ITSM
〔A〕
IH
Cj
〔mA〕
〔pF〕
Pulse measurement(Peak hold)
10/1000μs 8/20μs
Pulse measurement
f=1kHz OSC=1Vrms VD＝50V
Marking
page
12
KU10R
KU10N☆
KU15N☆
KU10LU☆
16
25N★ 29N
35N 40N
14
07
120 140
125 145
100
250
100
140 150
190 250
220 275
100
250
100
90
275 300
310 350
100
250
100
90
60
120
130
150
300
100
200
58
62＊2
100
250
100
200＊1
K10N
4082
K15
1482
KU10N☆
14
Ratings, Conditions
Unit：mm
K10
1416
K10N
2582
K10N
2982
K10
0782
76
−
78
80
82
84
＊1：OSC=20mVrms ＊2：VBR ★：Under development ☆：New product
Quick Reference(Series Ratings Table)
■Trankiller
SMD
Package : 2F
Type No.,Class
4.2
5.0±0.3
2.5
4.0±0.3
Standard soldering pad
C0.8
0.1±0.1
2.8±0.3
0.1±0.1
0.2
1.2±0.3
2.0±0.3
0.9
7.6±0.3
0.2
1.2±0.3
6.1
Date code
Class
Standard soldering pad
φ2.6±0.1
27.5±2
Type No.
1.5
＋0.5
5−0
2.0±0.1
2.0
2.5
2.0
Date code
27.5±2
T20
27
67
ST04 - 16F1、- 27F1 ST20 - 27F2
ST03 - 58F1
1.5±0.2
T4
φ0.6±0.05
ST04-16、- 27
2Y
Axial type
Package : 1F
2.5±0.3
Package : AX06
1.6±0.3
1.6±0.3
Unit：mm
Type No.
Ratings, Conditions
〔℃〕
〔A〕
〔V〕
〔V〕
〔V〕
〔μA〕
10/1000μs Non-repetitive
IR=1mA
IP=IRSM（10/1000μs）
VR＝VRM
Marking
page
ST04-27
ST04-16F1 ST04-27F1 ST03-58F1 ST20-27F2★
−40∼150
15
10
13.6
23
14.4∼17.6 24.3∼29.7
23
37
−55∼175
15
10
13.6
23
14.4∼17.6 24.3∼29.7
23
37
5.0
ST16
ST27
T4
1D
T4
2D
86
88
90
92
Package : 1F
−40∼150
50
23
24.3∼29.7
40
T5
75
T20
27
48
94
−
★：Under development
Package : STO-220
Bi-directional
For Automotive
DL04 - 18F1、28F1
ST50V - 27F、ST70 - 27F
4.6±0.2
4.2
1.0±0.2
Date code
Type No.,Class
Standard soldering pad
2.4±0.3
0.1±0.1
③
②
①
2.54±0.5
0.5±0.2
0.9±0.1
76
ST50V
27F
Type No.
2.0
9.3±0.2
10.2±0.2
13.2±0.5
Date code
2.0
2.5±0.3
1.5±0.2
④
82
D1
10.2±0.2
③
8.5
2.1
9.0
1.75
2.54
Type No.
Ratings, Conditions
〔℃〕
〔A〕
〔V〕
〔V〕
〔V〕
〔μA〕
②④
ST50V-27F
11.2
0.1±0.1
2.0±0.3
0.9
1.2±0.3
0.2
1.2±0.3
①
＋0.3
0.6−0.1
0.7±0.2
1.2±0.2
2.54±0.5
5.0±0.3
Tstg
IRSM
VRM
VBR
VCL
IR
−55∼150
4
45
52∼64
80
0.5±0.2
Tstg
IRSM
VRM
VBR
VCL
IR
ST04-16
10/1000μs Non-repetitive
IR=1mA
IP=IRSM（10/1000μs）
VR＝VRM
Marking
page
DL04-18F1
−55∼150
15
10
13
16.8∼19.1
25∼32
26
40
②④
③
ST70-27F
1.75
2.54
Unit：mm
ST50V-27F
DL04-28F1★
①
ST70-27F
−40∼150
130
23
180
24.3∼29.7
38
40
67
ST70
27F
5.0
D1
82
D2
82
63
ST50V
27F
96
−
98
100
★：Under development
13
Quick Reference(Series Ratings Table)
■Silicon Varistor
Package : AX06
＋0.5
27.5±2
5−0
φ2.6±0.1
27.5±2
27.5±2
＋0.5
5−0
27.5±2
φ0.6±0.05
VR-51B(A)
φ0.6±0.05
VR-61B(A)
φ0.6±0.05
VR-60B(A)
φ2.6±0.1
＋0.5
27.5±2
5−0
φ2.6±0.1
27.5±2
Unit：mm
Type No.
Ratings, Conditions
Tstg
〔℃〕
IO
〔Arms〕
IFSM
〔A〕
VF
Ta=40℃ Sine wave,R-load
50Hz, Sine wave, Non-repetitive IF=1mA
IF=10mA
IF=70mA
IF=1A
〔V〕
VR-60B（A）
VR-61B（A）
VR-51B（A）
0.5
16
―
―
―
MAX1.5
−30∼125
0.15
7.5
2.05∼2.55
2.50∼3.00
2.85∼3.35
―
0.15
7.5
1.55∼2.05
1.85∼2.35
2.15∼2.65
―
102
104
106
Marking
page
Package : 1Y
Package : 1F
VRYA
1.8
Standard soldering pad
IO
〔Arms〕
IFSM
〔A〕
VF
〔V〕
Ta=40℃
Sine wave、
R-load
On alumina substrate
On glass-epoxy substrate
10/200μs
10/1000μs
IF=1mA
IF=10mA
IF=70mA
1 Circuit
VR-61F1
1.6
2.8
5±0.2
Unit：mm
VRYA6
VRYA15
−55∼150
−30∼125
0.37（Ta=25℃）
0.31（1 element operation） 0.14（1 element operation）
0.28（Ta=25℃）
0.20（1 element operation） 0.09（1 element operation）
60
65（2 elements operation） 50（2 elements operation）
30
30（2 elements operation） 24（2 elements operation）
2.05∼2.55
5.13∼6.37
2.50∼3.00
6.25∼7.50
2.85∼3.35
7.13∼8.37
F1 1N
page
0.2±0.1
0.1±0.1
〔℃〕
Marking
14
2.0±0.3
Type No.
Standard soldering pad
1.1±0.2
8 MAX
Ratings, Conditions
Tstg
1.1±0.2
0.2
0.9
5.0±0.3
1.2±0.3
1.6
0.25±0.1
5±0.2
1.8
2.5±0.2
0.6±0.1
1.0±0.1
4.2
3.8±0.4
Type No.,Class
6A
95
2.0
Date code
1.2±0.3
6.6
Date code
2.0
1.5±0.2
F1 1N
2.5±0.3
Type No.
3.5±0.2
VR-61F1
6A
18
15A
18
108
110
112
Quick Reference(Series Ratings Table)
■UKP Series（UL497B Listed File No. E183905）
2.5
4.0±0.3
2.0±0.1
U10
6
65
Package : 2F
2.5
6.1
Date code
Type No.
Class
Standard soldering pad
C0.8
0.1±0.1
2.8±0.3
1.5
0.2
7.6±0.3
1.6±0.3
1.6±0.3
Unit：mm
Type No.
Ratings, Conditions
VDRM
VBO
〔V〕
〔V〕
ITSM
〔A〕
IH
Cj
Pulse measurement(Peak hold)
10/1000μs 8/20μs
Pulse measurement
f=1kHz OSC=1Vrms VD＝50V
〔mA〕
〔pF〕
Marking
page
UKP10L06
UKP10R25
UK15N14
48
55
190
220
180
90
120
130
150
300
100
200
U10
6
65
U10
25
65
U15
14
65
−
−
−
100
250
100
■UVR Series（UL497B Listed File No. E183905）
Package : AX06
Package : 1Y
UVRYA6
6.6
Date code
φ2.6±0.1
1.1±0.2
0.6±0.1
1.0±0.1
3.8±0.4
0.25±0.1
27.5±2
0.2±0.1
＋0.5
5−0
1.6
1.6
U6A
95
φ0.6±0.05
27.5±2
5±0.2
1.8
2.5±0.2
1.8
2.8
Type No.
Standard soldering pad
5±0.2
3.5±0.2
UVR-61BF
1.1±0.2
Unit：mm
8 MAX
Type No.
Ratings, Conditions
Tstg
〔℃〕
IO
〔Arms〕
IFSM
〔A〕
VF
〔V〕
UVR-61BF
UVRYA6
−30∼125
Ta=40℃ Sine wave,R-load 50Hz, Sine wave, Non-repetitive
10/1000μs
IF=1mA
IF=10mA 1 Circuit
IF=70mA
0.15
7.5
―
2.05∼2.55
2.50∼3.00
2.85∼3.35
Marking
page
0.31（1 element operation）
―
30（2 elements operation）
U6A
95
−
−
15
Package Outline and Soldering Pad
Outline Dimensions, Standard Soldering Pad
2.5
4.0±0.3
2.0±0.1
10R
25
13
2.0
F1 1N
2.5±0.3
■2F Package
1.5±0.2
■1F Package
2.5
2.0
4.2
Date code
Type No.
Type No.,Class
Standard soldering pad
Standard soldering pad
C 0.8
0.1±0.1
2.8±0.3
0.2
0.1±0.1
2.0±0.3
0.9
0.2
1.2±0.3
1.5
7.6±0.3
5.0±0.3
1.6±0.3
1.6±0.3
Unit：mm
Unit：mm
■1Y Package
■STO-220 Package
4.6±0.2
2.8
1.6
＋0.3
0.6−0.1
1.0±0.2
2.54
±0.5
0.7±0.2
1.2±0.2
2.54±0.5
11.2
8.5
5±0.2
2.4±0.3
0.1±0.1
2.1
9.0
3.8±0.4
0.6±0.1
1.0±0.1
0.25±0.1
Standard soldering pad
0.5±0.2
0.9±0.1
76
ST50V
27F
Type No.
9.3±0.2
10.2±0.2
13.2±0.5
Date code
1.6
6A
95
0.2±0.1
1.1±0.2
1.8
2.5±0.2
1.8
5±0.2
10.2±0.2
6.6
Date code
3.5±0.2
Type No.
0.5±0.2
1.2±0.3
6.1
Date code
Class
1.1±0.2
8 MAX
1.75
2.54
Unit：mm
1.75
2.54
Unit：mm
One example of soldering pad dimensions is shown here. Refer to
these dimensions when designing your printed circuit board.
16
Package Outline and Soldering Pad
■AX10 Package
＋0.5
27.5±2
5−0
27.5±2
φ1.0±0.05
φ0.6±0.05
■AX06 Package
φ2.6±0.1
26.5±2
+0.2
7＋0.5
−0
φ4.4 -0.1
26.5±2
Unit： mm
■TO-221 Package
■M2F（DO-214AA） Package
3.5±0.2
10±0.3
Type No.
Date code
0.7±0.2
1.0±0.3
2.54±0.2
①
②
Standard soldering pad
5.1±0.3
③
2.54±0.2
1.78
0.4±0.2
1.0±0.3
0.1±0.1
②
Class
1.45
①
12.5±0.5
1.4±0.2
1.4±0.2
2.29
2.29
K10
0874
Date code
1.78
3.75±0.3
Class
2.0±0.2
14 46
2.0 MAX
KT15N
9±0.3
Type No.
Unit： mm
1±0.3
③
Unit： mm
Unit： mm
17
Technical Information
Technical lnformation for Thyristor Surge Suppressor
1. Summary
It has been over 30 years since SHINDENGEN developed and released its silicon bi-directional，two-terminal thyristor，referred to as
“SIDAC”
（Silicon Diode for Alternating Current）
. During that time，these thyristors have been used by numerous customers and have
built up an impressive record of achievement.
TSS is developed to offer excellent surge protection features by taking full advantage of the basic structure of the SIDAC and
combining that with our development and technical capabilities.
TSS integrate the outstanding technical capabilities of SHINDENGEN to realize a completely new and ideal type of surge protector
that has satisfied customers for their protection of advanced data communication equipment and terminals from voltage surges induced
by lightning strikes.
2. Basic Structure and Operating Principle
T2
T2
Glass passivation
i1
P1
J1
N2
R2
J1
J2
J2
P3
P1
R2
i2
N2
N2
i3
P3
J3
N4
i1
J4
P5
T1
Fig.6 Structure
P3
R3
J3
N4
N4
R4
i4
P5
J4
T1
Fig.7 Electrical equivalent circuit
Fig.8 Symbol
The structure of TSS consists of a planar，five-layer structure as shown in Fig.6.It employs glass passivation that is the result of our original
research and development activities.
Fig.7 shows the electrical equivalent circuit of the TSS. TSS can be considered to be a complex device in which two SCR are
connected in parallel while facirg in opposite directions.
As described below，operation in the case of applying a plus（＋）voltage to T2 and a minus（ー）voltage to T1 in the structural drawing of
Fig.6，can be perceived in terms of each of the stages of the V-I characteristics curve of Fig.9.
1.Stage（Ⅰ）
Junction J2 is in the reverse bias state，and recoupling current the same as an ordinary PN junction diode（reverse leakage
current)flows putting the TSS into the off state.
2.Stage（Ⅱ）
As the applied voltage V increases up to the breakdown voltage VB of junction J2，junction J2 begins avalanche breakdown.
3．Stage（Ⅲ）
When the voltage drop of i2 xR2 exceeds breakover voltage VBO and reaches the diffusion potential VBi of junction J1 due to current I2
flowing directly beneath layer P1，carrier injection begins from layer P1 to layer N2 resulting in the flow of current i1.
18
Technical Information
Ⅰ
IT1
IT1
StageⅣ
IT
IH1
VT
IH
StageⅢ
VBO2
VDRM2
IDRM1
IDRM2
VDRM1
VBO1
StageⅡ
IH2
StageⅠ
VT2
VBO
IT2
V
Fig.9 V-I Characteristics
Fig.10 V-I Characteristics
As a result，the TSS switches to the on state when the sum of the two current amplification factors α1 of the N2 P3 N4 transistor
and α2 of the P1 N2 P3 transistor，which both exhibit current dependency，is α1＋α2＝1.
4.Stage(Ⅳ)
An on-state voltage VT is similar to forward voltage drop of the ordinary PN junction diode.
Since the case in which the direction of the applied voltage is the opposite（T2→minus（−），T1→plus（＋））is valid in
completely the same manner，V-I characteristics that are symmetrical in both directions are exhibited as shown in Fig.10.
3.Basic Operation and V-I Characteristics
①Normal State
VB
Electronic Equipment
RL
I
iL
IH
iL
RL
Point (a)
The operating point is point（a）of the off region on the
V-I characteristics in Fig.11.
Load current iL is supplied to the electronic equipment.
VB
VBO
V
Fig.11 V-I Characteristics during normal operation
19
Technical Information
Electronic Equipment
I
②Operation during Surge Voltage lnduced
RL
Vsurge
isurge
isurge
Point（b）
RL
IH
At the moment a surge voltage that exceeds the breakover voltage
VBO is applied to both terminals of the TSS，the TSS switches on to the
on state， and the operation point moves to point b of the V-I
characteristics.
As a result，only a voltage equivalent to the on-state voltage VT of the
TSS is applied to the electronic equipment.
As isurge gradually decreases so that it falls below holding current IH，
the TSS is automatically reset so that the normal load current i L is
supplied to the electronic equipment.
Vsurge
VBO
Fig.12 V-I Characteristics during surge voltage induced
4.Impulse Waveform
Current
The waveform of lightning surge current can be described as shown in Fig.13
Our TSS are tested based on the following waveform.
A
1.0
0.9
0.5
I
T1：Duration of wave front
T2：Duration of wave tail
I ： Crest value
A ：Peak point
0.1
0
t0
T1
t2
t1
T2
Time
Fig.13 Impulse waveform
※The waveform is represented in terms of the duration of the wave front and the duration of the wave tail(T1/T2）
μs
ExampIe：For an indication of 10／1000μs，the duration of the wave front（T1）is 10μs
and the duration of the wave tail（T2）is 1000μs
20
V
Technical Information
5.Comparison of Surge Response
A comparison of the clamping waveforms of our TSS，a Gas discharge tube（GDT）and a metal oxide varistor（MOV）is shown in
photographs 1 through 3 at an IP value of 100A（10／1000μs）.
Test conditions
IP ：100A（10／1000μs）
VP：1000V
V ：100V／div l：20A／div
Photograph 1 Shindengen TSS
（VBO：252V）
t：0.5μs／div
Photograph 2
GDT
Photograph 3
（DC discharge voltage：230V）
MOV
（Vz：264V at 1 mA）
Photographs 4 through 6 indicate a comparison of clamping waveforms VCL at dv／dt＝1000V／μs.
Test conditions
IP：50A
VP：1500V
VcL：295V
Photograph 4
Shindengen TSS
（VBO：252V）
dv/dt：1000V/μs
V：100V/div I：20A/div
t：200ns/div
VcL：470V
Photograph 5
GDT
（DC discharge voltage：230V）
VcL：380V
Photograph 6
MOV
（Vz：264V at 1 mA）
ln the case of a surge protective device such as，gas tube arrestors and metal oxide varistors（MOV）
，the clamping voltage at the time of
surge operation is extremely high relative to nominal values（ DC discharge voltage and breakdown voltage V Z ）. The dv/dt-VCL
characteristics and VCL-T characteristics（clamping voltage-time characteristics）are shown in Figs.14 and 15，respectively.
In consideration of these characteristics，it is necessary to employ a protective circuit design that anticipates the withstand voltage of the
electronic equipment and the dv/dt value of the incoming surge when using a gas tube arrestor or metal oxide varistor.As can also be understood
from the VCL -T characteristics，particularly in gas tube arrestors，the operating voltage（discharge voltage）tends to become higher relative to
a sharp dv/dt waveform due to discharge delay phenomena.This phenomena presents a difficult problem when designing protective circuits in
the case of actual surge protection.
ln recent years，due to the low withstand voltages of ICs，LSIs and other semiconductors and electronic equipment，protective circuits are
required to respond rapidly to sudden voltage surges.TSS is able to operate at a constant clamping voltage for even sharp surge waveforms.It
facilitates the use of individual devices，and no special protection.Moreover，they are not subject to degradation over time even when surge voltage
is applied repeatedly，and offer greater stability than gas tube arrestors and metal oxide varistors，making them much easier to use.
21
1kV/s
0.1kV/μ
s
1V/μs
100V/μ
s
1000
1kV/μ
s
10kV/μ
s
Technical Information
Clamping Voltage VCL〔V〕
Clamping Voltage VCL〔V〕
800
Gas tube arrester
600
400
ZnO
TSS
200
0
-1
10
10
0
10
1
10
2
10
3
10
4
Gas tube arrester
1000
ZnO
TSS
100
-8
10
10
-6
dv/dt〔V/μs〕
10
-4
10
-2
10
0
Operating Time〔sec〕
Fig.14 dv/dt-VCL characteristics
Fig.15 VCL-T characteristics
6.New Producut and Technology Trend
Over the passed years，TSS is developed mainly as bi-directional type.
Recently，Novel type，Low voltage type and Reverse conductive type TSS were developed based on the technical research closely
related to market requirements.V-I characteristics of Conventional type TSS is shown by figure 16-1. Since Conventional type TSS has
negative resistance region，it works as“quickly-breaking-over”when surge exceeds breakover voltage.
While V-I characteristics of Novel type TSS is shown by figure 16-2，which has more stable characteristics in high frequency
application.
I
I
IT1
IT1
VT1
VT1
IH1
V
VBO2
IH1
（IBO1）
IDRM1
VDRM2
IDRM2 VDRM1
（IBO2）
IH2
VT2
IDRM1
V
IDRM2
IBO2
VDRM1
VBR1 VBO1 V
IH2
VT2
IT2
IT2
I
I
Fig.16-1 TSS V-I Characteristcs
（negative−slope）
22
VBO1
V VBO2 VBR2 VDRM2
IBO1
Fig.16-2 TSS V-I Characteristcs
（positive-slope）
Technical Information
The V-I characteristic of low-voltage type TSS device is shown in figure 16-3. Built with a conventional structure ，the low-voltage
designs exhibit high capacitance，a serious drawback. To soIve this problem，SHINDENGEN has developed a special structure which
is incorporated in current production.（under requirement of its patent.）
I
I
IT1
IT1
VT1
VT1
IH1
V
VBO2
IH1
IDRM1
VDRM2
V
IDRM2 VDRM1
VBO1
IBO1
IDRM1
V
VDRM1
VBR1 VBO1 V
IH2
VT2
IT2
I
Fig.16-3 TSS V-I Characteristics
（Bi-Directional/Low voltage type）
VF
IF
I
Fig.16-4 TSS V-I Characteristics
（Uni-Directional/Reverse conductive type）
The V-I characteristic of the reverse-conduction type TSS is shown in Figure 16-4. Because most telecommunication applications use
a negative voltage line. In this case，a TSS with reverse-conduction characteristics is suitable.
The schematic symbol for a reverse-conduction TSS，as differentiated from a bidirectional-type，is shown in Figure17.
Fig.17 Circuit symbol
23
Technical Information
■Trankiller
Current I
Trankiller（ Transient Surge Killers：registered trademark of
SHINDENGEN） is a type of voltage clamp silicon surge
protective device that applies the reverse avalanche breakdown
phenomenon of a silicon PN junction.
These devices are also referred to as Power Zeners，since
they allow a large surge current（ avalanche current）to flow in
the reverse direction compared to Zener diodes，which are
ordinary constant voltage devices.
Fig.18 shows the voltage-current（ V-I）characteristics of
Trankillers.
Since these devices exhibit remarkable non- linear
characteristics，between when off（ saturation stage）and when
on（breakdown stage），the response characteristics to surges
are quick，enabling them to obtain a stable clamping voltage.
4. Leakage current during the steady state is extremely low.
5. Two types are available，consisting of a compact surfacemounted type and an axial lead type.
(selection Criteria for Tankiller）
Selection Method
Determination of
maximum reverse
voltage VRM
●Circuit voltage
（peak value of voltage applied in
the normal state）
Input surge current
●Peak surge voltage
●Surge impedance
Determination of
cIamping voltage
VCL1＜VCL
Other special
conditions etc.
●Capacitance
（Estimation of surge current）
VRM
VBR VCL
Voltage V
The surge current Is that fIows to the trankiller in the equivalent circuit shown in Fig.19 is determined according to the
following formula :
VS
IS = ・
Zo
Fig.18 Voltage-Current characteristics
ZO
Surge voltage Vs
1. The fast response speed enables the obtaining of a stable
clamping voltage.
2. The allowable power is much larger than ordinary constant
voltage devices（avalanche diodes）
.
3. There is no degradation over time relative to repeated surges
and they are maintenance-free.
VS
ZO
Current I
・
V-I Characteristics
・
ZO
VCL1
VS
Voltage V
Fig.20 Suge impedance characteristics
IRSM＞IS
・
(Features)
24
●Withstand voltage of circuit to
be protected
IRSM
lmA
IR
IS＝
Main Conditions
IS
VCL
Fig.19 Equivalent circuit in surge operation
Is
IRSM
Vs
VCL
・
Zo
：
：
：
：
：
Suge current〔A〕
Max.surge current〔A〕
Surge voltage〔V〕
Clamping voltage〔∨〕（limiting voltage）
Equivalent surge impedance
For reference，in the case of trankillers，clamping voltage
（V CL ）characteristics are indicated in the form of the V-l
characteristics. According to the current value（I RSM）that
flows in protection circuit，clamping voltage applied on
electronic equipment has to be lower than withstand voltage of
electronic equipment.
Technical Information
■Silicon Varistors
Current I
Silicon varistors are a voltage-clamp type of surge protective
device that utilizes the forward voltage drop of a PN junction.
These devices demonstrate the bi-directional characteristics
resulting when PN diodes are connected in parallel in reverse.
SHINDENGEN has succeeded in composing these
bi-directional
characteristics in a single chip using isolation
diffusion technology.
In addition，the use of gIass passivation produced results in
outstanding reliability.
IF
VF
Voltage V
Fig.22 Voltage-Current characteristics
Fig.21 Silicon Varistor internal equivalent circuit
(Features)
1. Perfect as a device for signal protection.
2. Compact size and highly reliable.
3. Various voltage variations through the use of high-density
technology.
4. Both surface-mounted and axial types are available.
5. Low capacitance.
■Standard Measurement of Surge ON−state Current
Historically，SHINDENGEN has used three standardized waveforms to define Surge On-state Current（8/20μs，10/200μs and
10/1000μs）
. Recently，though，the rapid expansion of communication applications has brought into use many new evaluation
waveforms that more closely approximate actual usage. In response.SHINDENGEN has expanded its list of measured standards to
those listed in Table 2.
SHINDENGEN application engineers are available to assist in selecting specific devices that are expected to operate outside
the range defined by these standards.
Waveform
Peak Surge Current
2/10μs
1kA
FCC Par. 68
Belcore 1089
―――
8/20μs
1kA
IEC1000-4-5
VDE 0878
ANSI C62.41
15/100μs
200A
―――
―――
―――
10/160μs
200A
FCC Par. 68
―――
―――
10/200μs
200A
―――
―――
―――
10/560μs
100A
FCC Par. 68
―――
―――
10/1000μs
100A
Belcore 00974
ITU-T K.28
REA PE-60
Table2
Proper International Standard
Standard surge waveform in SHINDENGEN
25
TSS KL SERIES
SMD
■OUTLINE DIMENSIONS
2.0
2.5±0.3
64
Z1
KL3Z07, 18
1.5±0.2
Package : 1F
2.0
4.2
Date code
Type No.,Class
Standard soldering pad
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
1.2±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KL3Z07
KL3Z18
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
Surge On-State Current
ITSM
5
10/1000μs 15
V
30
Non-repetitive
A
8/20μs
150
Electrical Characteristics Tl=25℃
26
MIN
MIN
Breakdown Voltage
VBR
IBR=1mA
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
5.5
15.5
V
Holding Current
IH
Pulse measurement
MIN
50
mA
On-State Voltage
VT
IT=2A
TYP
1.5
V
Junction Capacitance
Cj
f=1kHz
OSC=20mVrms VD=0V
MAX
100
pF
KL3Z07, 18
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
On-State Voltage―On-State Current
1.10
Breakdown Voltage VBR Tj（℃）/VBR（25℃）
100
On-State Current IT〔A〕
50
20
10
5
〔TYP〕
2
1
2
3
4
5
6
1.00
0.95
〔TYP〕
0.90
0.85
−40 −20
1
0
1.05
7
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
1000
2.5
500
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
2.0
TYP
pulse measurement
〔
〕
1.5
1.0
0.5
TYP
OSC=20mVrms
〔
200
〕
100
VD=0V
50
20
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
20
50 100
Frequency f〔kHz〕
200
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
f=1kHz
TYP
〔
200
〕
50
50
20
10
0.1
0.2
0.5
1
2
5
20
10
Off-State applied Voltage VD〔V〕
50
100
27
TSS KL SERIES
SMD
■OUTLINE DIMENSIONS
Package : 1F
KL3L07
2.0
2.5±0.3
1.5±0.2
64
07
①
②
2.0
4.2
Date code
Type No.,Class
Standard soldering pad
1.2±0.3
①
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
Unit：mm
②
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KL3L07
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
58
V
Surge On-State Current
ITSM
10/1000μs Non-repetitive
8/20μs
30
A
100
Electrical Characteristics Tl=25℃
28
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
65
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.5
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
90
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
80
V
KL3L07
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.2
Breakover Voltage VBO Tj（℃）/VBO（25℃）
100
On-State Current IT〔A〕
50
20
10
5
Tl＝25℃
TYP
pulse measurement
2
1
0
1
2
3
4
5
6
7
1.15
1.1
1.05
1.0
0.95
0.9
0.85
0.8
−40
8
On-State Voltage VT〔V〕
Holding Current
0
40
80
Junction Temp. Tj〔℃〕
120
Junction Capacitance f-Cj
1000
3
2.5
TYP
pulse measurement
〔
2
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
TYP
pulse measurement
（peak hold）
〕
1.5
1
〔
Off―State
TYP
〕
100
VD=50V
10
0.5
0
−40
0
40
80
120
150
Junction Temp. Tj〔℃〕
1
1
10
100
Frequency f〔kHz〕
1000
Junction Capacitance VD-Cj
Junction Capacitance Cj〔pF〕
1000
Tl＝25℃
TYP
f=1kHz
100
10
1
0.1
1
10
40
Off-State applied Voltage VD〔V〕
29
TSS KL SERIES
SMD
■OUTLINE DIMENSIONS
Package : 1F
2.0
2.5±0.3
1.5±0.2
64
14
KL3N14
2.0
4.2
Date code
Type No.,Class
Standard soldering pad
1.2±0.3
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KL3N14
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
120
V
Surge On-State Current
ITSM
10/1000μs 30
Non-repetitive
8/20μs
A
100
Electrical Characteristics Tl=25℃
30
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
130
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.8
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
50
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
195
V
KL3N14
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
100
Breakover Voltage VBO Tj（℃）/VBO（25℃）
1.10
On-State Current IT〔A〕
50
20
10
5
〔TYP〕
2
1
2
3
4
5
6
1.00
TYP
pulse measurement
（peak hold）
0.95
0.90
0.85
−40 −20
1
0
1.05
7
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
2.5
1000
500
2.0
TYP
pulse measurement
〔
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
〕
1.5
1.0
0.5
〔TYP〕
200
100
VD=0V
50
VD=50V
20
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
20
50 100
Frequency f〔kHz〕
200
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
f=1kHz
TYP
200
〕
100
50
20
10
0.1
0.2
0.5
1
2
5
10
20
50
100
Off-State applied Voltage VD〔V〕
31
TSS KL SERIES
SMD
■OUTLINE DIMENSIONS
Package : 1F
KL3R20
2.0
2.5±0.3
1.5±0.2
17
20
①
②
2.0
4.2
Date code
Type No.,Class
Standard soldering pad
1.2±0.3
①
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
Unit：mm
②
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KL3R20
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
175
V
Surge On-State Current
ITSM
10/1000μs 30
Non-repetitive
8/20μs
A
100
Electrical Characteristics Tl=25℃
32
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
Off-State Current
IDRM
MIN
180
V
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.8
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
30
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
250
V
KL3R20
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.1
Breakover Voltage VBO Tj（℃）/VBO（25℃）
100
On-State Current IT〔A〕
50
20
10
5
Tl＝25℃
TYP
pulse measurement
2
1
0
1
2
3
4
5
6
7
1.05
1
0.95
0.9
0.85
−40
8
TYP
pulse measurement
（peak hold）
−20
0
On-State Voltage VT〔V〕
Holding Current
100
120
Junction Capacitance f-Cj
100
3
〔TYP〕
2.5
TYP
pulse measurement
〔
2
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
Junction Temp. Tj〔℃〕
〕
1.5
1
50
VD=0V
20
VD=50V
0.5
0
−40
−20
0
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
10
0.01
0.1
1
10
Frequency f〔kHz〕
100
1000
Junction Capacitance VD-Cj
Junction Capacitance Cj〔pF〕
200
Tl＝25℃
TYP
f=1kHz
100
50
20
10
0.1
0.2
0.5
1
2
5
10
20
50
Off-State applied Voltage VD〔V〕
33
TSS KP SERIES
SMD
■OUTLINE DIMENSIONS
2.5
4.0±0.3
4L
7
82
KP4L07
2.0±0.1
Package : 2F
2.5
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
2.8±0.3
1.5
0.2
7.6±0.3
0.1±0.1
Type No.
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP4L07
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
58
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
40
10/200μs Non-repetitive
60
8/20μs
150
A
Electrical Characteristics Tl=25℃
34
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
65
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.25
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
90
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
80
V
KP4L07
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.05
1.00
0.95
TYP
pulse measurement
（peak hold）
0.90
0.85
0.80
−40 −20
7
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
1000
3.0
500
2.5
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
TYP
pulse measurement
〔
2.0
〕
1.5
1.0
100
VD=0V
50
VD=50V
0.5
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
f=1kHz
TYP
〕
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
100
50
10
0.1
1
10
100
Off-State applied Voltage VD〔V〕
35
TSS KP SERIES
SMD
■OUTLINE DIMENSIONS
2.5
2.0±0.1
4N
12
82
KP4N12
4.0±0.3
Package : 2F
2.5
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
2.8±0.3
1.5
0.2
7.6±0.3
0.1±0.1
Type No.
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP4N12
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
100
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
40
10/200μs Non-repetitive
60
8/20μs
150
A
Electrical Characteristics Tl=25℃
36
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
110
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.25
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
50
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
135
V
KP4N12
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.05
1.00
0.95
TYP
pulse measurement
（peak hold）
0.90
0.85
0.80
−40 −20
7
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
1000
3.0
500
TYP
pulse measurement
〔
2.5
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
2.0
1.5
1.0
VD=0V
100
50
VD=50V
0.5
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
f=1kHz
TYP
〕
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
37
TSS KP SERIES
SMD
■OUTLINE DIMENSIONS
2.5
2.0±0.1
10L
8
13
KP10L06, 07, 08
4.0±0.3
Package : 2F
2.5
Type No.
6.1
Date code
Class
Standard soldering pad
C 0.8
0.1±0.1
2.8±0.3
1.5
0.2
7.6±0.3
1.6±0.3
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP10L06
KP10L07
KP10L08
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
Surge On-State Current
48
VDRM
ITSM
58
63
10/1000μs
100
10/200μs Non-repetitive
150
8/20μs
250
V
A
Electrical Characteristics Tl=25℃
38
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
Off-State Current
IDRM
MIN
MIN
65
VD=VDRM
MAX
10
μA
55
MIN
75
V
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.15
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
180
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
80
MAX
70
MAX
100
V
KP10L06, 07, 08
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.05
1.00
0.95
TYP
pulse measurement
（peak hold）
0.90
0.85
0.80
−40 −20
7
0
On-State Voltage VT〔V〕
3.0
1000
2.5
500
TYP
pulse measurement
〔
2.0
〕
1.5
1.0
140
VD=0V
VD=50V
100
50
〔TYP〕
0.5
0
−40
120
Junction Capacitance f-Cj
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
Holding Current
20
40
60
80
100
Junction Temp. Tj〔℃〕
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
100
50
〔
f=1kHz
TYP
10
0.1
1
10
〕
50
100
Off-State applied Voltage VD〔V〕
39
TSS KP SERIES
SMD
■OUTLINE DIMENSIONS
2.5
2.0±0.1
10N
14
82
KP10N12, 14
4.0±0.3
Package : 2F
2.5
Type No.
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
0.1±0.1
2.8±0.3
1.5
0.2
7.6±0.3
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP10N12
KP10N14
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
Surge On-State Current
100
VDRM
ITSM
120
10/1000μs
100
10/200μs Non-repetitive
150
8/20μs
250
V
A
Electrical Characteristics Tl=25℃
40
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
Off-State Current
IDRM
VD=VDRM
MIN 110
MIN 130
V
MAX 10
μA
Holding Current
IH
Pulse measurement
MIN 100
mA
On-State Voltage
VT
IT=2A
TYP 1.15
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX 140
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX 135
MAX 195
V
KP10N12,14
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
KP10N12
20 KP10N14
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
KP10N12
1.05
1.00
KP10N14
0.95
0.85
0.80
−40 −20
7
TYP
pulse measurement
（peak hold）
0.90
0
20
40
60
80
100
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
Holding Current
500
2.5
TYP
pulse measurement
〔
KP10N12
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
140
Junction Capacitance f-Cj（KP10N12）
3.0
2.0
KP10N14
1.5
1.0
KP10N12
200
VD=0V
100
VD=50V
50
〔
0.5
0
−40
−20
0
20
40
60
80
100
120
10
0.1
140
Junction Temp. Tj〔℃〕
Junction Capacitance VD-Cj（KP10N14）
1
Off―State
TYP
10
Frequency f〔kHz〕
〕
100
1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
1000
Junction Capacitance Cj〔pF〕
120
VD=0V
100
VD=50V
KP10N14
KP10N12
100
〔
TYP
f=1kHz
〕
KP10N14
〔TYP〕
10
1
10
100
Off-State applied Voltage VD〔V〕
1000
10
0.1
1
10
50
Off-State applied Voltage VD〔V〕
41
TSS KP SERIES
SMD
■OUTLINE DIMENSIONS
2.5
2.0±0.1
10R
25
82
KP10R25
4.0±0.3
Package : 2F
2.5
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
2.8±0.3
1.5
0.2
7.6±0.3
0.1±0.1
Type No.
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP10R25
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
190
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
100
10/200μs Non-repetitive
150
8/20μs
250
A
Electrical Characteristics Tl=25℃
42
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
220
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.60
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
90
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
290
V
KP10R25
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.05
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.00
0.95
0.90
TYP
pulse measurement
（peak hold）
0.85
0.80
−40 −20
7
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
2.5
1000
500
TYP
pulse measurement
〔
2.0
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
1.5
1.0
0.5
VD=0V
100
VD=50V
50
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
〕
f=1kHz
TYP
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
43
TSS KP SERIES
SMD
■OUTLINE DIMENSIONS
2.5
2.0±0.1
15L
8
45
KP15L08
4.0±0.3
Package : 2F
2.5
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
2.8±0.3
1.5
0.2
7.6±0.3
0.1±0.1
Type No.
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP15L08☆
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
63
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
150
10/200μs Non-repetitive
200
8/20μs
300
A
Electrical Characteristics Tl=25℃
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
70
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.85
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
180
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
100
V
☆：New product
44
KP15L08
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
2
3
4
5
1.00
TYP
pulse measurement
（peak hold）
0.95
0.90
−40 −20
1
0
1.05
6
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
2.5
1000
TYP
pulse measurement
〔
2.0
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
1.5
1.0
0.5
500
VD=0V
300
VD=50V
200
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
100
1
2
5
10
20
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
Junction Capacitance Cj〔pF〕
1000
〔
f=1kHz
TYP
〕
500
300
200
100
0.1
0.5
1
5
10
50
100
Off-State applied Voltage VD〔V〕
45
TSS KP SERIES
SMD
■OUTLINE DIMENSIONS
Package : 2F
2.5
4.0±0.3
2.0±0.1
15N
14
13
KP15N14
2.5
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
2.8±0.3
1.5
0.2
7.6±0.3
0.1±0.1
Type No.
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP15N14
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
120
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
150
10/200μs Non-repetitive
200
8/20μs
300
A
Electrical Characteristics Tl=25℃
46
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
130
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.45
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
200
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
195
V
KP15N14
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.05
1.00
0.95
0.90
TYP
pulse measurement
（peak hold）
0.85
0.80
−40 −20
7
0
On-State Voltage VT〔V〕
Holding Current
140
1000
2.5
500
TYP
pulse measurement
〔
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
120
Junction Capacitance f-Cj
3.0
2.0
1.5
1.0
VD=0V
VD=50V
100
50
〔TYP〕
0.5
0
−40
20
40
60
80
100
Junction Temp. Tj〔℃〕
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
f=1kHz
TYP
〕
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
47
TSS KP SERIES
SMD
■OUTLINE DIMENSIONS
2.5
2.0±0.1
15R
25
13
KP15R25
4.0±0.3
Package : 2F
2.5
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
2.8±0.3
1.5
0.2
7.6±0.3
0.1±0.1
Type No.
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP15R25
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
190
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
150
10/200μs Non-repetitive
200
8/20μs
300
A
Electrical Characteristics Tl=25℃
48
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
220
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.35
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
150
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
290
V
KP15R25
■CHARACTERISTIC DIAGRAMS
On-State Voltage―On-State Current
Breakover Voltage
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
TYP
pulse measurement
（peak hold）
1.05
1.00
0.95
0.90
0.85
0.80
−40 −20
7
0
On-State Voltage VT〔V〕
Holding Current
140
1000
2.5
500
TYP
pulse measurement
〔
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
120
Junction Capacitance f-Cj
3.0
2.0
1.5
1.0
VD=0V
100
VD=50V
50
〔TYP〕
0.5
0
−40
20
40
60
80
100
Junction Temp. Tj〔℃〕
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
f=1kHz
TYP
〔
〕
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
49
TSS KP SERIES
SMD
Uni-directionl
■OUTLINE DIMENSIONS
2.5
2.0±0.1
8L
U07
4D
KP8LU07
4.0±0.3
Package : 2F
2.5
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
2.8±0.3
1.5
0.2
7.6±0.3
0.1±0.1
Type No.
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP8LU07
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
58
V
Surge On-State Current
ITSM
Surge On-State Current
IFSM
10/1000μs
80
8/20μs Non-repetitive
200
10/1000μs
80
A
Electrical Characteristics Tl=25℃
50
Breakdown Voltage
VBR
IBR=1mA
MIN
65
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
2.0
V
Forward Voltage
VF
IF=2A
TYP
1.25
V
Junction Capacitance
Cj
f=1kHz
OSC=20mVrms VD=50V
MAX
100
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
80
V
KP8LU07
■CHARACTERISTIC DIAGRAMS
On-State Voltage―On-State Current
Breakdown Voltage
Breakdown Voltage VBO Tj（℃）/VBO（25℃）
100
On-State Current IT〔A〕
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.10
1.05
1.00
0.95
TYP
pulse measurement
（peak hold）
0.90
0.85
−40 −20
7
0
20
40
60
80
100
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
Holding Current
140
Junction Capacitance f-Cj
2.5
1000
TYP
pulse measurement
〔
2.0
〕
500
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
120
1.5
1.0
0.5
VD=0V
200
100
VD=50V
50
20
〔TYP〕
0
−40
10
−20
0
20
40
60
80
100
120
140
1
2
5
10
20
50 100
Frequency f〔kHz〕
Junction Temp. Tj〔℃〕
Junction Capacitance VD-Cj
100
500
50
〔
f=1kHz
TYP
〕
Forward Current IF〔A〕
Junction Capacitance Cj〔pF〕
500 1000
Forward Voltage―Forward Current
1000
200
100
50
20
10
0.1
200
20
〔TYP〕
10
5
2
0.2
0.1
1
2
5
10
20
Off-State applied Voltage VD〔V〕
50
100
1
0
1
2
3
4
5
Forward Voltage VF〔V〕
6
7
51
TSS KP SERIES
SMD
Uni-directionl
■OUTLINE DIMENSIONS
2.5
2.0±0.1
10L
U07
62
KP10LU07
4.0±0.3
Package : 2F
2.5
6.1
Date code
Class
Standard soldering pad
C 0.8
1.6±0.3
2.8±0.3
1.5
0.2
7.6±0.3
0.1±0.1
Type No.
1.6±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KP10LU07
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
58
V
Surge On-State Current
ITSM
10/1000μs
8/20μs Surge On-State Current
IFSM
100
Non-repetitive
10/1000μs
250
A
100
Electrical Characteristics Tl=25℃
52
Breakdown Voltage
VBR
IBR=1mA
MIN
62
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
2.0
V
Forward Voltage
VF
IF=2A
TYP
1.25
V
Junction Capacitance
Cj
f=1kHz
OSC=20mVrms VD=50V
MAX
200
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
80
V
KP10LU07
■CHARACTERISTIC DIAGRAMS
On-State Voltage―On-State Current
Breakdown Voltage
Breakdown Voltage VBO Tj（℃）/VBO（25℃）
100
On-State Current IT〔A〕
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.10
1.05
1.00
0.95
TYP
pulse measurement
（peak hold）
0.90
0.85
−40 −20
7
0
20
Holding Current
60
80
100
120
140
Junction Capacitance f-Cj
2.5
1000
〔
VD=0V
500
TYP
pulse measurement
2.0
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
40
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
1.5
1.0
0.5
200
VD=50V
100
50
20
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
10
140
1
2
5
10
Junction Capacitance VD-Cj
100
200
500 1000
100
〔
f=1kHz
TYP
50
〕
Forward Current IF〔A〕
500
Junction Capacitance Cj〔pF〕
50
Forward Voltage―Forward Current
1000
200
100
50
20
〔TPY〕
10
5
2
20
10
0.1
20
Frequency f〔kHz〕
Junction Temp. Tj〔℃〕
1
0.2
0.5
1
2
5
10
20
Off-State applied Voltage VD〔V〕
50
100
0
1
2
3
4
5
6
7
Forward Voltage VF〔V〕
53
TSS KA SERIES
Axial Package
■OUTLINE DIMENSIONS
Package : AX06
φ0.6±0.05
KA3Z07, 18
＋0.5
27.5±2
5−0
φ2.6±0.1
27.5±2
●Marking
Color code（07：Red,18：Silver）
Type No.
KZ 67
Date Code
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KA3Z07
KA3Z18
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
Surge On-State Current
ITSM
5
15
10/1000μs
30
Non-repetitive
8/20μs 150
V
A
Electrical Characteristics Tl=25℃
54
MIN
MIN
Breakdown Voltage
VBR
IBR=1mA
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
5.5
15.5
V
Holding Current
IH
Pulse measurement
MIN
50
mA
On-State Voltage
VT
IT=2A
TYP
1.5
V
Junction Capacitance
Cj
f=1kHz
OSC=20mVrms VD=0V
MAX
100
pF
KA3Z07, 18
■CHARACTERISTIC DIAGRAMS
On-State Voltage―On-State Current
Breakdown Voltage
1.10
Breakdown Voltage VBO Tj（℃）/VBO（25℃）
100
On-State Current IT〔A〕
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
2
3
4
5
6
1.00
0.95
TYP
pulse measurement
（peak hold）
0.90
0.85
−40 −20
1
0
1.05
7
0
Holding Current
40
60
80
100
120
140
Junction Capacitance f-Cj
1000
2.5
500
TYP
pulse measurement
〔
2.0
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
1.5
1.0
0.5
TYP
OSC=10mVrms
〔
200
〕
100
VD=0V
50
20
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
20
50 100
Frequency f〔kHz〕
200
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
f=1kHz
TYP
200
〕
50
50
20
10
0.1
0.2
0.5
1
2
5
10
20
50
100
Off-State applied Voltage VD〔V〕
55
TSS KA SERIES
Axial Package
■OUTLINE DIMENSIONS
φ1.0±0.05
Package : AX10
KA10R25
26.5±2
+0.2
＋0.5
φ4.4 -0.1
26.5±2
7−0
●Marking
Color code（Green）
Type No.
10R5 99
Date Code
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KA10R25
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
190
V
Surge On-State Current
ITSM
10/1000μs
100
Non-repetitive
8/20μs 250
A
Electrical Characteristics Tl=25℃
56
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
Off-State Current
IDRM
MIN
220
V
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.60
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
90
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
290
V
KA10R25
■CHARACTERISTIC DIAGRAMS
On-State Voltage―On-State Current
Breakover Voltage
1.05
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.00
0.95
0.90
TYP
pulse measurement
（peak hold）
0.85
0.80
−40 −20
7
0
Holding Current
40
60
80
100
120
140
Junction Capacitance f-Cj
2.5
1000
500
TYP
pulse measurement
〔
2.0
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
1.5
1.0
0.5
VD=0V
100
VD=50V
50
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
f=1kHz
TYP
〕
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
57
TSS KT SERIES
Insulaeed Full Mold
■OUTLINE DIMENSIONS
Package : TO-221
3.5±0.2
10±0.3
Type No.
KT10L
9±0.3
KT10L07, 08
08 46
Class
1.4±0.2
12.5±0.5
1.4±0.2
Date Code
0.7±0.2
2.54±0.2
0.4±0.2
2.54±0.2
①
②
③
①
②
③
1±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KT10L07
KT10L08
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
Surge On-State Current
VDRM
ITSM
58
63
10/1000μs
100
10/200μs Non-repetitive
150
8/20μs
250
V
A
Electrical Characteristics Tl=25℃ Terminal No.①―②、③―②
58
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
MIN
MIN
65
70
V
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.15
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
180
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
80
MAX
100
V
KT10L07, 08
■CHARACTERISTIC DIAGRAMS
On-State Voltage―On-State Current
Breakover Voltage
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.05
1.00
0.95
0.90
TYP
pulse measurement
（peak hold）
0.85
0.80
−40 −20
7
0
Holding Current
60
80
100
120
140
1000
2.5
500
TYP
pulse measurement
〔
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
40
Junction Capacitance f-Cj
3.0
2.0
1.5
1.0
VD=0V
VD=50V
100
50
〔TYP〕
0.5
0
−40
20
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
f=1kHz
TYP
〕
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
59
TSS KT SERIES
Insulaeed Full Mold
■OUTLINE DIMENSIONS
Package : TO-221
3.5±0.2
10±0.3
Type No.
KT10N
9±0.3
KT10N14
14 45
Class
1.4±0.2
12.5±0.5
1.4±0.2
Date Code
0.7±0.2
2.54±0.2
0.4±0.2
2.54±0.2
①
②
③
①
②
③
1±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KT10N14
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
120
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
100
10/200μs Non-repetitive
150
8/20μs
250
A
Electrical Characteristics Tl=25℃ Terminal No.①―②、③―②
60
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
130
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.15
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
140
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
195
V
KT10N14
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.05
1.00
0.95
0.90
TYP
pulse measurement
（peak hold）
0.85
0.80
−40 −20
7
0
Holding Current
40
60
80
100
120
140
Junction Capacitance f-Cj
1000
3.0
2.5
500
TYP
pulse measurement
〔
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
2.0
1.5
1.0
VD=0V
100
VD=50V
50
0.5
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
f=1kHz
TYP
〕
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
61
TSS KT SERIES
Insulaeed Full Mold
■OUTLINE DIMENSIONS
Package : TO-221
3.5±0.2
10±0.3
Type No.
KT10R
9±0.3
KT10R25
25 45
Class
1.4±0.2
12.5±0.5
1.4±0.2
Date Code
0.7±0.2
2.54±0.2
0.4±0.2
2.54±0.2
①
②
③
①
②
③
1±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KT10R25☆
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
190
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
100
10/200μs Non-repetitive
150
8/20μs
250
A
Electrical Characteristics Tl=25℃ Terminal No.①―②、③―②
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
220
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.60
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
90
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
290
V
☆：New Producut
62
KT10R25
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.05
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.00
0.95
0.90
TYP
pulse measurement
（peak hold）
0.85
0.80
−40 −20
7
0
Holding Current
40
60
80
100
120
140
Junction Capacitance f-Cj
2.5
1000
500
TYP
pulse measurement
〔
2.0
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
1.5
1.0
0.5
VD=0V
100
VD=50V
50
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
f=1kHz
TYP
〕
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
63
TSS KT SERIES
Insulaeed Full Mold
■OUTLINE DIMENSIONS
Package : TO-221
3.5±0.2
10±0.3
Type No.
KT15N
9±0.3
KT15N14
14 46
Class
1.4±0.2
12.5±0.5
1.4±0.2
Date Code
0.7±0.2
2.54±0.2
0.4±0.2
2.54±0.2
①
②
③
①
②
③
1±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KT15N14
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
120
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
150
10/200μs Non-repetitive
200
8/20μs
300
A
Electrical Characteristics Tl=25℃ Terminal No.①―②、③―②
64
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
130
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.45
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
200
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
195
V
KT15N14
■CHARACTERISTIC DIAGRAMS
On-State Voltage―On-State Current
Breakover Voltage
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.05
1.00
0.95
0.90
TYP
pulse measurement
（peak hold）
0.85
0.80
−40 −20
7
0
Holding Current
40
60
80
100
120
140
Junction Capacitance f-Cj
1000
3.0
500
TYP
pulse measurement
2.5
〔
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
2.0
1.5
1.0
VD=0V
VD=50V
100
50
0.5
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
f=1kHz
TYP
〕
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
65
TSS KT SERIES
Insulaeed Full Mold
■OUTLINE DIMENSIONS
Package : TO-221
3.5±0.2
10±0.3
Type No.
KT15R
9±0.3
KT15R25
25 45
Class
1.4±0.2
12.5±0.5
1.4±0.2
Date Code
0.7±0.2
2.54±0.2
0.4±0.2
2.54±0.2
①
②
③
①
②
③
1±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KT15R25
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
VDRM
190
V
Maximum Off-State Voltage
Surge On-State Current
ITSM
10/1000μs
150
10/200μs Non-repetitive
200
8/20μs
300
A
Electrical Characteristics Tl=25℃ Terminal No.①―②、③―②
66
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
220
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.35
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
150
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
290
V
KT15R25
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
TYP
pulse measurement
（peak hold）
1.05
1.00
0.95
0.90
0.85
0.80
−40 −20
7
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
1000
3.0
2.5
500
TYP
pulse measurement
〔
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
2.0
1.5
1.0
VD=0V
100
VD=50V
50
0.5
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
〔
f=1kHz
TYP
〕
100
50
10
0.1
1
10
50
100
Off-State applied Voltage VD〔V〕
67
TSS KT SERIES
Insulaeed Full Mold
■OUTLINE DIMENSIONS
Package : TO-221
3.5±0.2
10±0.3
Type No.
KT40N
9±0.3
KT40N14
14 4N
1.0±0.2
②
1.4±0.2
Date Code
1.4±0.2
①
0.7±0.2
12.5±0.5
Class
③
2.54±0.2
0.4±0.2
1±0.3
5.08±0.2
②
①
Unit：mm
③
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KT40N14
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Maximum Off-State Voltage
VDRM
120
V
Surge On-State Current
ITSM
10/1000μs
400
Non-repetitive
15/100μs 1000
A
Electrical Characteristics Tl=25℃ Terminal No.①―③
68
Breakover Voltage
VBO
Pulse measurement
（Peak hold）
MIN
130
V
Off-State Current
IDRM
VD=VDRM
MAX
10
μA
Holding Current
IH
Pulse measurement
MIN
200
mA
On-State Voltage
VT
IT=2A
TYP
1.8
V
Junction Capacitance
Cj
f=1kHz
OSC=1Vrms VD=50V
MAX
300
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
195
V
KT40N14
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage―On-State Current
1.10
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
20
〔TYP〕
10
5
2
1.05
1.00
0.95
0.85
−40 −20
1
0
1
2
3
4
TYP
pulse measurement
（peak hold）
0.90
5
0
Holding Current
40
60
80
100
120
140
Junction Capacitance f-Cj
1000
2.5
VD=0V
500
TYP
pulse measurement
〔
2.0
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
Junction Temp. Tj〔℃〕
On-State Voltage VT〔V〕
1.5
1.0
0.5
VD=50V
200
100
50
20
0
−40
−20
0
20
40
60
80
100
120
140
50
100
Junction Temp. Tj〔℃〕
10
1
2
5
10
20
50 100
Frequency f〔kHz〕
200
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
200
100
50
〔
f=1kHz
TYP
20
10
0.1
0.5
1
5
10
〕
Off-State applied Voltage VD〔V〕
69
TSS KU SERIES
SMD
■OUTLINE DIMENSIONS
Package : M2F
KU5N12
Class
1.78
2.29
1.78
2.29
3.75±0.3
K05
1282
2.0±0.2
Type name
Standard soldering pad
Date code
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KU5N12☆
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Operating Temperature
Top
−40∼70
℃
Maximum Off-State Voltage
VDRM
100
V
Surge On-State Current
ITSM
50
A
Pulse-waveform ,10/1000μs
Electrical Characteristics Tc=25℃
Breakover Voltage
VBO
dv/dt＝8V/ms
（Peak hold）
MIN
110
V
Off-State Current
IDRM
VD=VDRM
MAX
5.0
μA
Holding Current
IH
Pulse measurement
MIN
150
mA
On-State Voltage
VT
IT=2A
TYP
1.25
V
Capacitance
Cj
f=1MHz
OSC=1Vrms VD=50V
MAX
50
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
135
V
☆：New product
70
(UL497B Listed File No.E183905)
KU5N12
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage − On-State Current
100
Breakover Voltage VBO Tj（℃）/VBO（25℃）
1.20
On-State Current IT〔A〕
50
20
10
5
〔 TYP 〕
2
1
2
3
4
5
1.10
1.05
1
TYP
pulse measurement
（peak hold）
0.95
0.90
0.85
0.80
−40 −20
1
0
1.15
6
0
On-State Voltage VT〔V〕
120
140
Junction Capacitance f-Cj
1.8
1000
1.6
500
〔TYP〕
100
VD=0V
〔
1.4
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
Holding Current
20
40
60
80
100
Junction Temp. Tj〔℃〕
TYP
pulse measurement
〕
1.2
1
0.8
50
VD=50V
0.6
0.4
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
f=1MHz
osc=1Vrms
TYP
100
50
10
0.1
1
10
Off-State applied Voltage VD〔V〕
50
100
71
TSS KU SERIES
SMD
■OUTLINE DIMENSIONS
Package : M2F
KU5R29N
Type name
1.78
2.29
1.78
Class
2.29
3.75±0.3
K05N
2918 ②
2.0±0.2
①
Standard soldering pad
Date code
①
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
②
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KU5R29N☆
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Operating Temperature
Top
−40∼70
℃
Maximum Off-State Voltage
VDRM
250
V
Surge On-State Current
ITSM
50
A
Pulse-waveform ,10/1000μs
Electrical Characteristics Tl=25℃
Breakover Voltage
VBO
dv/dt＝8V/ms
（Peak hold）
MIN
275
V
Off-State Current
IDRM
VD=VDRM
MAX
5.0
μA
150
mA
Holding Current
IH
Pulse measurement
MIN
On-State Voltage
VT
IT=2A
MAX
3
V
Capacitance
Cj
f=1MHz
OSC=1Vrms VD=50V
MAX
70
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
400
V
☆：New product
72
(UL497B Listed File No.E183905)
KU5R29N
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage − On-State Current
1.1
Breakover Voltage VBO Tj（℃）/VBO（25℃）
100
On-State Current IT〔A〕
50
20
10
5
Tl＝25℃
TYP
pulse measurement
2
1
0
0.5
1
1.5
2
2.5
3
3.5
1.05
1
0.95
0.85
−40
4
TYP
pulse measurement
（peak hold）
0.9
−20
0
On-State Voltage VT〔V〕
Holding Current
100
120
Junction Capacitance f-Cj
200
3
〔TYP〕
2.5
〔
2
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
Junction Temp. Tj〔℃〕
TYP
pulse measurement
〕
1.5
1
100
VD=0V
50
VD=50V
20
0.5
0
−40
−20
0
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
10
1
2
5
10
20
50 100
Frequency f〔kHz〕
200
500 1000
Junction Capacitance VD-Cj
Junction Capacitance Cj〔pF〕
200
TYP
f=1kHz
Tl＝25℃
100
50
20
10
0.1
0.2
0.5
1
2
5
10
20
50
Off-State applied Voltage VD〔V〕
73
TSS KU SERIES
SMD
■OUTLINE DIMENSIONS
Package : M2F
KU10L08
Class
1.78
2.29
1.78
2.29
3.75±0.3
K10
0874
2.0±0.2
Type name
Standard soldering pad
Date code
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KU10L08
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Operating Temperature
Top
−40∼70
℃
Maximum Off-State Voltage
VDRM
63
V
Surge On-State Current
ITSM
100
A
Pulse-waveform ,10/1000μs
Electrical Characteristics Tc=25℃
74
Breakover Voltage
VBO
dv/dt＝8V/ms
（Peak hold）
Off-State Current
IDRM
MIN
70
V
VD=VDRM
MAX
5.0
μA
MIN
150
mA
1.15
V
Holding Current
IH
Pulse measurement
On-State Voltage
VT
IT=2A
Capacitance
Cj
f=1MHz
OSC=1Vrms VD=50V
MAX
180
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
100
V
TYP
(UL497B Listed File No.E183905)
KU10L08
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage − On-State Current
1.20
Breakover Voltage VBO Tj（℃）/VBO（25℃）
100
On-State Current IT〔A〕
50
20
10
5
〔 TYP 〕
2
1
2
3
4
5
6
1.10
1.05
1
0.95
TYP
pulse measurement
（peak hold）
0.90
0.85
0.80
−40 −20
1
0
1.15
7
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
1000
2.5
〔
2.0
500
TYP
pulse measurement
〕
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
1.5
1.0
0.5
VD=0V
VD=50V
100
50
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
100
50
f=1MHz
osc=1Vrms
TYP
10
0.1
1
10
Off-State applied Voltage VD〔V〕
50
100
75
TSS KU SERIES
SMD
■OUTLINE DIMENSIONS
Package : M2F
KU10N14,16
Type name
1.78
2.29
1.78
2.29
3.75±0.3
K10
1416
2.0±0.2
①
②
Class
Standard soldering pad
Date code
①
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
②
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KU10N14 KU10N16
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Operating Temperature
Top
−40∼70
℃
Maximum Off-State Voltage
VDRM
120 140
V
Surge On-State Current
ITSM
100
A
Pulse-waveform ,10/1000μs
Electrical Characteristics Tc=25℃
76
MIN
125 MIN 145
Breakover Voltage
VBO
Pulse measurement（Peak hold）
Off-State Current
IDRM
VD=VDRM
MAX
5.0
μA
V
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
MAX
3.0
V
Capacitance
Cj
f=1kHz
VD=50V
MAX
140 MAX 150
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
195 MAX 200
V
(UL497B Listed File No.E183905)
KU10N14
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage − On-State Current
1.1
Breakover Voltage VBO Tj（℃）/VBO（25℃）
On-State Current IT〔A〕
100
10
Tl＝25℃
TYP
pulse measurement
1
0
1
2
3
4
5
6
1.05
1
0.95
0.9
0.8
−40
7
On-State Voltage VT〔V〕
Holding Current
−20
0
20
40
60
80
Junction Temp. Tj〔℃〕
100
120
Junction Capacitance f-Cj
1000
3
2.5
〔
2
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
TYP
pulse measurement
（peak hold）
0.85
TYP
pulse measurement
〕
1.5
1
VD=0V
100
VD=50V
0.5
0
−40
−20
0
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
10
1
10
100
Frequency f〔kHz〕
1000
Junction Capacitance VD-Cj
Junction Capacitance Cj〔pF〕
1000
Tl＝25℃
TYP
f=1kHz
100
10
0.1
1
10
50
Off-State applied Voltage VD〔V〕
77
TSS KU SERIES
SMD
■OUTLINE DIMENSIONS
Package : M2F
KU10R29N
Class
1.78
2.29
1.78
2.29
3.75±0.3
K10N
2974
2.0±0.2
Type name
Standard soldering pad
Date code
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KU10R29N
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Operating Temperature
Top
−40∼70
℃
Maximum Off-State Voltage
VDRM
250
V
Surge On-State Current
ITSM
100
A
Pulse-waveform ,10/1000μs
Electrical Characteristics Tc=25℃
78
Breakover Voltage
VBO
dv/dt＝8V/ms
（Peak hold）
Off-State Current
IDRM
MIN
275
V
VD=VDRM
MAX
5.0
μA
MIN
150
mA
1.60
V
Holding Current
IH
Pulse measurement
On-State Voltage
VT
IT=2A
Capacitance
Cj
f=1MHz
OSC=1Vrms VD=50V
MAX
90
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
400
V
TYP
(UL497B Listed File No.E183905)
KU10R29N
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage − On-State Current
1.20
Breakover Voltage VBO Tj（℃）/VBO（25℃）
On-State Current IT〔A〕
100
10
〔 TYP 〕
2
4
6
8
1.10
1.05
1
0.95
TYP
pulse measurement
（peak hold）
0.90
0.85
0.80
−40 −20
1
0
1.15
10
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
100
3.0
VD=0V
2.5
〔
2.0
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
TYP
pulse measurement
〕
1.5
1.0
50
VD=50V
0.5
0
−40
〔TYP〕
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
f=1MHz
osc=1Vrms
TYP
100
50
10
0.1
1
10
Off-State applied Voltage VD〔V〕
50
100
79
TSS KU SERIES
SMD
■OUTLINE DIMENSIONS
Package : M2F
KU10S35N, 40N
Type name
Class
2.29
1.78
2.29
3.75±0.3
2.0±0.2
K10N
4074
1.78
Standard soldering pad
Date code
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KU10S35N☆ KU10S40N☆
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Operating Temperature
Top
−20∼85
℃
Maximum Off-State Voltage
VDRM
275 300
V
Surge On-State Current
ITSM
100
A
Pulse-waveform ,10/1000μs
Electrical Characteristics Tc=25℃
MIN
310 MIN 350
Breakover Voltage
VBO
Pulse measurement（Peak hold）
Off-State Current
IDRM
VD=VDRM
MAX
5.0
μA
V
Holding Current
IH
Pulse measurement
MIN
150
mA
On-State Voltage
VT
IT=2A
MAX
1.7
V
Capacitance
Cj
f=1MHz
VD=50V
MAX
90 MAX 60
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
450 MAX 500
V
☆：New product
80
(UL497B Listed File No.E183905)
KU10S35N, 40N
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage − On-State Current
1.20
Breakover Voltage VBO Tj（℃）/VBO（25℃）
On-State Current IT〔A〕
100
10
〔 TYP 〕
2
4
6
8
1.10
1.05
1
0.95
0.90
TYP
pulse measurement
（peak hold）
0.85
0.80
−40 −20
1
0
1.15
10
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
2.5
100
VD=0V
2.0
〔
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
TYP
pulse measurement
〕
1.5
1.0
0.5
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
50
〔TYP〕
VD=50V
20
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
f=1MHz
osc=1Vrms
TYP
100
50
10
0.1
1
10
Off-State applied Voltage VD〔V〕
50
100
81
TSS KU SERIES
SMD
■OUTLINE DIMENSIONS
Package : M2F
KU15N14
Type name
Class
2.29
1.78
2.29
3.75±0.3
2.0±0.2
K15
1482
1.78
Standard soldering pad
Date code
0.1±0.1
1.45
1.0±0.3
2.0 MAX
5.1±0.3
1.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KU15N14☆
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Operating Temperature
Top
−40∼70
℃
Maximum Off-State Voltage
VDRM
120
V
Surge On-State Current
ITSM
150
A
Pulse-waveform ,10/1000μs
Electrical Characteristics Tc=25℃
Breakover Voltage
VBO
dv/dt＝8V/ms
（Peak hold）
Off-State Current
IDRM
MIN
125
V
VD=VDRM
MAX
5.0
μA
Holding Current
IH
Pulse measurement
MIN
100
mA
On-State Voltage
VT
IT=2A
TYP
1.45
V
Capacitance
Cj
f=1MHz
OSC=1Vrms VD=50V
MAX
200
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
195
V
☆：New product
82
(UL497B Listed File No.E183905)
KU15N14
■CHARACTERISTIC DIAGRAMS
Breakover Voltage
On-State Voltage − On-State Current
1.20
Breakover Voltage VBO Tj（℃）/VBO（25℃）
200
On-State Current IT〔A〕
100
50
10
〔 TYP 〕
5
1
2
3
4
5
6
1.10
1.05
1
0.95
0.90
0.85
0.80
−40 −20
1
0
TYP
pulse measurement
（peak hold）
1.15
7
0
On-State Voltage VT〔V〕
120
140
Junction Capacitance f-Cj
3.5
1000
3.0
500
〔
2.5
Junction Capacitance Cj〔pF〕
Holding Current IH Tj（℃）/IH（25℃）
Holding Current
20
40
60
80
100
Junction Temp. Tj〔℃〕
TYP
pulse measurement
〕
2.0
1.5
1.0
VD=0V
VD=50V
100
50
〔TYP〕
0.5
0
−40
−20
0
20
40
60
80
100
120
140
Junction Temp. Tj〔℃〕
10
1
2
5
10
50 100
Frequency f〔kHz〕
500 1000
Junction Capacitance VD-Cj
1000
Junction Capacitance Cj〔pF〕
500
f=1MHz
osc=1Vrms
TYP
100
50
10
0.1
1
10
Off-State applied Voltage VD〔V〕
50
100
83
TSS KU SERIES
SMD
Uni-directionl
■OUTLINE DIMENSIONS
Package : M2F
KU10LU07
Type name
Class
2.29
1.78
2.29
3.75±0.3
2.0±0.2
■K10
0774
1.78
Standard soldering pad
Date code
0.1±0.1
1.0±0.3
2.0 MAX
1.45
5.1±0.3
1.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Type No.
Conditions
KU10LU07☆
Unit
Storage Temperature
Tstg
−40∼125
℃
Junction Temperature
Tj
125
℃
Operating Temperature
Top
−40∼70
℃
Maximum Off-State Voltage
VDRM
58
V
Surge On-State Current
ITSM
100
A
Pulse-waveform ,10/1000μs
Electrical Characteristics Tc=25℃
Breakover Voltage
VBR
IBR=1mA
MIN
65
V
Off-State Current
IDRM
VD=VDRM
MAX
5.0
μA
Holding Current
IH
Pulse measurement
MIN
150
mA
On-State Voltage
VT
IT=2A
TYP
1.15
V
Capacitance
Cj
f=1MHz
OSC=20mVrms VD=50V
MAX
200
pF
Clamping Voltage
VCL
dv/dt=100V/μs
MAX
80
V
☆：New product
84
(UL497B Listed File No.E183905)
KU10LU07
■CHARACTERISTIC DIAGRAMS
On-State Voltage − On-State Current
Breakover Voltage
100
Breakdown Voltage VBR T（℃）/VBR（25℃）
1.10
On-State Current IT〔A〕
50
20
10
5
TYP
pulse measurement
〔
2
〕
1
0
1
2
3
4
5
6
1.05
1.00
TYP
pulse measurement
（peak hold）
0.95
0.90
0.85
−40 −20
7
0
On-State Voltage VT〔V〕
Holding Current
120
140
Junction Capacitance f-Cj
2.5
1000
VD=0V
500
2.0
〔
Junction Capacitance Cj〔pF〕
Holding Current IH T（℃）/IH（25℃）
20
40
60
80
100
Junction Temp. Tj〔℃〕
TYP
pulse measurement
〕
1.5
1.0
0.5
200
VD=50V
100
50
20
〔TYP〕
0
−40
−20
0
20
40
60
80
100
120
10
140
1
2
5
Junction Temp. Tj〔℃〕
200
500 1000
Forward Voltage
Junction Capacitance VD-Cj
100
1000
500
50
f=1MHz
TYP
〔
〕
200
On-State Current IT〔V〕
Junction Capacitance Cj〔pF〕
10
20
50 100
Frequency f〔kHz〕
100
50
20
20
10
5
2
〔TYP〕
10
0.1
1
0.2
0.5
1
2
5
10
20
Off-State applied Voltage VD〔V〕
50
100
0
1
2
3
4
On-State Voltage VT〔V〕
5
6
7
85
Trankiller
Axial Package
■OUTLINE DIMENSIONS
Package : AX06
φ0.6±0.05
ST04-16
27.5±2
＋0.5
5−0
27.5±2
φ2.6±0.1
●Markig
Color code（Silver）
Type No.（Silver）
ST 16
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
−40∼150
℃
Junction Temperature
Tj
150
℃
10/1000μs
Peak Surge Reverse Current
10/200μs
Maximum Reverse Voltage
15
Non-repetitive
IRSM
VRM
A
28
13.6
V
14.4∼17.6
V
Electrical Characteristics Tl=25℃
86
Breakdown Voltage
VBR
IR=1mA
Clamping Voltage
VCL
IPP=15A
MAX
23
V
Reverse Current
IR
VR=13.6V
MAX
5
μA
ST04-16
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
Clamping Voltage
19
10
Breakdown Voltage VBR〔V〕
Peak Pulse Current IP〔A〕
100
1
0.1
〔
0.01
0.001
14
10/1000μs
TYP
〕
〔
17
16
15
16
18
20
0
22
Reverse Current
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
140
160
Peak Surge Reverse Current
500
500
current form
Peak Surge Reverse Current IRSM〔A〕
Reverse Current IR〔nA〕
〕
18
Clamping Voltage VCL〔V〕
100
50
10
5
〔
VR=13.6V
TYP
〕
0
20
40
60
80
100
120
140
160
IRSM
IRSM
2
0
200
tp
non-repetitive
Tj=25
100
50
20
10
0.01
1
0.02
0.05
0.1
0.2
Pulse width tp〔ms〕
Junction Temp. Tj〔℃〕
Junction Capacitance f-Cj
1
3000
VR=13.6V
TYP
〕
Junction Capacitance Cj〔pF〕
〔
500
300
200
100
0.1
0.5
Junction Capacitance VR-Cj
1000
Junction Capacitance Cj〔pF〕
IR=1mA
TYP
0.5
1
5
Frequency f〔kHz〕
10
50
〔
f=100kHz
TYP
〕
1000
500
300
100
0.1
0.5
1
5
10
30
Reverse Applied Voltage VR〔V〕
87
Trankiller
Axial Package
■OUTLINE DIMENSIONS
Package : AX06
φ0.6±0.05
ST04-27
27.5±2
＋0.5
5−0
27.5±2
φ2.6±0.1
●Markig
Color code（Silver）
Type No.（Silver）
ST 27
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
−40∼150
℃
Junction Temperature
Tj
150
℃
10/1000μs
Peak Surge Reverse Current
IRSM
10/200μs
Maximum Reverse Voltage
10
A
Non-repetitive
VRM
19
23
V
24.3∼29.7
V
Electrical Characteristics Tl=25℃
88
Breakdown Voltage
VBR
IR=1mA
Clamping Voltage
VCL
IPP=10A
MAX
37
V
Reverse Current
IR
VR=23V
MAX
5
μA
ST04-27
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
100
31
10
30
Breakdown Voltage VBR〔V〕
Peak Pulse Current IP〔A〕
Clamping Voltage
1
0.1
〔
0.01
0.001
25
10/1000μs
TYP
〕
〔
28
27
26
27
29
31
33
0
35
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
140
160
Peak Surge Reverse Current
Reverse Current
200
500
current form
Peak Surge Reverse Current IRSM〔A〕
Reverse Current IR〔nA〕
〕
29
Clamping Voltage VCL〔V〕
100
50
10
5
〔
VR=23V
TYP
〕
0
20
40
60
80
100
120
140
160
IRSM
IRSM
2
0
100
tp
non-repetitive
Tj=25
50
20
10
5
0.01
1
0.02
0.05
0.1
0.2
Pulse width tp〔ms〕
Junction Temp. Tj〔℃〕
Junction Capacitance f-Cj
0.5
1
Junction Capacitance VR-Cj
1000
〔
500
VR=23V
TYP
〕
300
100
50
30
Junction Capacitance Cj〔pF〕
1000
Junction Capacitance Cj〔pF〕
IR=1mA
TYP
〔
500
f=100kHz
TYP
〕
300
100
50
10
1
3
5
10
30
50
Frequency f〔kHz〕
100
300 500
30
0.1
0.5
1
5
10
30
Reverse Applied Voltage VR〔V〕
89
Trankiller
SMD
■OUTLINE DIMENSIONS
Package : 1F
2.0
2.5±0.3
1.5±0.2
1D
T4
ST04-16F1
2.0
4.2
Date code
Type No., Class
Standard soldering pad
1.2±0.3
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
−55∼175
℃
Junction Temperature
Tj
150
℃
10/1000μs
Peak Surge Reverse Current
IRSM
10/200μs
Maximum Reverse Voltage
15
A
Non-repetitive
VRM
28
13.6
V
14.4∼17.6
V
Electrical Characteristics Tl=25℃
90
Breakdown Voltage
VBR
IR=1mA
Clamping Voltage
VCL
IPP=15A
MAX
23
V
Reverse Current
IR
VR=13.6V
MAX
5
μA
ST04-16F1
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
Clamping Voltage
19
10
Breakdown Voltage VBR〔V〕
Peak Pulse Current IP〔A〕
100
1
0.1
〔
0.01
0.001
14
10/1000μs
TYP
〕
〔
17
16
15
16
18
20
0
22
Reverse Current
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
140
160
Peak Surge Reverse Current
500
500
current form
Peak Surge Reverse Current IRSM〔A〕
Reverse Current IR〔nA〕
〕
18
Clamping Voltage VCL〔V〕
100
50
10
5
〔
VR=13.6V
TYP
〕
0
20
40
60
80
100
120
140
160
IRSM
IRSM
2
0
200
tp
non-repetitive
Tj=25
100
50
20
10
0.01
1
0.02
0.05
0.1
0.2
Pulse width tp〔ms〕
Junction Temp. Tj〔℃〕
Junction Capacitance f-Cj
1
3000
VR=13.6V
TYP
〕
Junction Capacitance Cj〔pF〕
〔
500
300
200
100
0.1
0.5
Junction Capacitance VR-Cj
1000
Junction Capacitance Cj〔pF〕
IR=1mA
TYP
0.5
1
5
Frequency f〔kHz〕
10
50
〔
f=100kHz
TYP
〕
1000
500
300
100
0.1
0.5
1
5
10
30
Reverse Applied Voltage VR〔V〕
91
Trankiller
SMD
■OUTLINE DIMENSIONS
2.0
2.5±0.3
1.5±0.2
T4
ST04-27F1
2D
Package : 1F
2.0
4.2
Date code
Type No., Class
Standard soldering pad
1.2±0.3
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Conditions
Symbol
Ratings
Unit
Storage Temperature
Tstg
−55∼175
℃
Junction Temperature
Tj
150
℃
10/1000μs
Peak Surge Reverse Current
IRSM
10/200μs
Maximum Reverse Voltage
10
A
Non-repetitive
VRM
19
23
V
24.3∼29.7
V
Electrical Characteristics Tl=25℃
92
Breakdown Voltage
VBR
IR=1mA
Clamping Voltage
VCL
IPP=10A
MAX
37
V
Reverse Current
IR
VR=23V
MAX
5
μA
ST04-27F1
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
100
31
10
30
Breakdown Voltage VBR〔V〕
Peak Pulse Current IP〔A〕
Clamping Voltage
1
0.1
〔
0.01
0.001
25
10/1000μs
TYP
〕
〔
28
27
26
27
29
31
33
0
35
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
140
160
Peak Surge Reverse Current
Reverse Current
200
500
current form
Peak Surge Reverse Current IRSM〔A〕
Reverse Current IR〔nA〕
〕
29
Clamping Voltage VCL〔V〕
100
50
10
5
〔
VR=23V
TYP
〕
0
20
40
60
80
100
120
140
160
IRSM
IRSM
2
0
100
tp
non-repetitive
Tj=25
50
20
10
5
0.01
1
0.02
0.05
0.1
0.2
Pulse width tp〔ms〕
Junction Temp. Tj〔℃〕
Junction Capacitance f-Cj
0.5
1
Junction Capacitance VR-Cj
1000
〔
500
VR=23V
TYP
〕
300
100
50
30
Junction Capacitance Cj〔pF〕
1000
Junction Capacitance Cj〔pF〕
IR=1mA
TYP
〔
500
f=100kHz
TYP
〕
300
100
50
10
1
3
5
10
30
50
Frequency f〔kHz〕
100
300 500
30
0.1
0.5
1
5
10
30
Reverse Applied Voltage VR〔V〕
93
Trankiller
SMD
■OUTLINE DIMENSIONS
2.0
2.5±0.3
1.5±0.2
T5
ST03-58F1
75
Package : 1F
2.0
4.2
Date code
Type No., Class
Standard soldering pad
1.2±0.3
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
−55∼150
℃
Junction Temperature
Tj
150
℃
300
W
Peak Surge Reverse Power
PRSM
10/1000μs
Non-repetitive
Peak Surge Reverse Current
IRSM
4
A
Maximum Reverse Voltage
VRM
45
V
Electrical Characteristics Tl=25℃
94
Breakdown Voltage
VBR
IR=1mA
52∼64
V
Clamping Voltage
VCL
IPP=4A
MAX
80
V
Reverse Current
IR
VR=45V
MAX
5
μA
ST03-58F1
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
Clamping Voltage
4
70
Breakdown Voltage VBR〔V〕
Peak Pulse Current IP〔A〕
1
0.1
〔
0.01
0.001
50
10/1000μs
TYP
〕
60
〔
60
65
70
75
0
80
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
140
160
Peak Surge Reverse Current
Reverse Current
1000
100
Peak Surge Reverse Current IRSM〔A〕
Reverse Current IR〔nA〕
〕
50
55
Clamping Voltage VCL〔V〕
100
10
VR=45V
TYP
pulse test
0
20
40
60
80
100
120
140
current form
IRSM
IRSM
2
0
tp
non-repetitive
Tj=25
10
1
0.01
1
160
Junction Temp. Tj〔℃〕
Junction Capacitance f-Cj
0.1
Pulse width tp〔ms〕
1
Junction Capacitance VR-Cj
500
1000
300
500
〔
100
VR=45V
TYP
〕
50
30
10
1
5
10
50
100
Frequency f〔kHz〕
500 1000
Junction Capacitance Cj〔pF〕
Junction Capacitance Cj〔pF〕
IR=1mA
TYP
〔
f=100kHz
TYP
〕
100
50
10
0.1
1
10
50
Reverse Applied Voltage VR〔V〕
95
Trankiller
SMD
■OUTLINE DIMENSIONS
2.0
2.5±0.3
1.5±0.2
D1
DL04-18F1
82
Package : 1F
2.0
4.2
Date code
Type No., Class
Standard soldering pad
1.2±0.3
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Conditions
Symbol
Ratings
Unit
Storage Temperature
Tstg
−55∼150
℃
Junction Temperature
Tj
150
℃
400
W
13
V
Peak Surge Reverse Power
PRSM
Maximum Reverse Voltage
VRM
10/1000μs Non-repetitive
Electrical Characteristics Tl=25℃
96
Breakdown Voltage
VBR
IR=5mA
16.8∼19.1
V
Clamping Voltage
VCL
IPP=15A
MAX 26 V
Reverse Current
IR
VR=13V
MAX 5 μA
DL04-18F1
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
100
20
10
19
Breakdown Voltage VBR〔V〕
Peak Pulse Current IP〔A〕
Clamping Voltage
1
0.1
0.01
〔
10/1000μs
TYP
〕
0.001
18
17
〔
16
18
20
22
0
24
Clamping Voltage VCL〔V〕
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
140
160
Peak Surge Reverse Current
Reverse Current
500
Peak Surge Reverse Current IRSM〔A〕
10
Reverse Current IR〔nA〕
〕
15
16
1
0.1
パルス測定
TYP
〔
〕
0
20
40
60
80
100
120
140
100
10
160
Junction Temp. Tj〔℃〕
Junction Capacitance f-Cj
current form
IRSM
IRSM
2
0
1
0.01
0.01
tp
non-repetitive
Tj=25
0.1
Pulse width tp〔ms〕
1
Junction Capacitance VR-Cj
1000
1000
〔
VR=13V
TYP
〕
100
10
1
10
Frequency f〔kHz〕
100
500
Junction Capacitance Cj〔pF〕
Junction Capacitance Cj〔pF〕
IR=5mA
TYP
〔
f=100kHz
TYP
〕
100
10
0.1
1
10
30
Reverse Applied Voltage VR〔V〕
97
Trankiller
STO-220
■OUTLINE DIMENSIONS
Package : STO-220
4.6±0.2
1.0±0.2
Type No.
0.9±0.1
2.4±0.3
0.1±0.1
＋0.3
0.6−0.1
0.7±0.2
1.2±0.2
2.54±0.5
11.2
2.1
9.0
8.5
2.54±0.5
9.3±0.2
10.2±0.2
13.2±0.5
Date code
76
ST50V
27F
0.5±0.2
0.5±0.2
ST50V-27F
10.2±0.2
1.75
2.54
1.75
2.54
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item Symbol
Conditions
Trankiller
Ratings
Diode
Unit
Storage Temperature
Tstg
−40∼150
℃
Junction Temperature
Tj
150
℃
5000 W
Peak Surge Reverse Power
PRSM
10/1000μs
Non-repetitive
Peak Surge Reverse Current
IRSM
130 A
Maximum Reverse Voltage
VRM
23 400
V
Electrical Characteristics Tl=25℃
98
Breakdown Voltage
VBR
IR=1mA
Clamping Voltage
VCL
IPP=130A
Reverse Current
IR
VR=23V
Forward Voltage
VF
IF=1.1A
V
24.3∼29.7 MAX 40
V
MAX 5
μA
MAX 1.2
V
ST50V-27F
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
Clamping Voltage
300
30
Breakdown Voltage VBR〔V〕
Peak Pulse Current IP〔A〕
100
50
10
5
1
0.5
0.1
0.05
〔
10/1000μs
TYP
〕
0.01
0.005
0.001
25
29
28
〔
27
IR=1mA
TYP
〕
26
27
29
31
33
0
35
20
40
Clamping Voltage VCL〔V〕
60
80
100
120
Junction Temp. Tj〔℃〕
140
160
Peak Surge Reverse Current
Reverse Current
5
Peak Surge Reverse Current IRSM〔A〕
current form
Reverse Current IR〔nA〕
2
1
0.5
0.2
0.1
〔
0.05
VR=23V
TYP
〕
0.02
0
20
40
60
80
100
120
140
tp
non-repetitive
Tj=25
100
10
0.02
0.01
160
IRSM
IRSM
2
0
1000
0.1
Junction Temp. Tj〔℃〕
Junction Capacitance f-Cj
Junction Capacitance VR-Cj
〔
5000
VR=23V
TYP
〕
Junction Capacitance Cj〔pF〕
20000
10000
Junction Capacitance Cj〔pF〕
10
1
Pulse width tp〔ms〕
f=100kHz
TYP
〔
〕
10000
3000
1000
5000
3000
2000
500
300
1
5
10
50
Frequency f〔kHz〕
100
500
1000
0.1
0.5
1
5
10
30
Reverse Applied Voltage VR〔V〕
99
Trankiller
STO-220
■OUTLINE DIMENSIONS
Package : STO-220
4.6±0.2
1.0±0.2
Type No.
0.9±0.1
2.4±0.3
0.1±0.1
＋0.3
0.6−0.1
0.7±0.2
1.2±0.2
2.54±0.5
11.2
2.1
9.0
8.5
2.54±0.5
9.3±0.2
10.2±0.2
13.2±0.5
Date code
63
ST70
27F
0.5±0.2
0.5±0.2
ST70-27F
10.2±0.2
1.75
2.54
1.75
2.54
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item Symbol
Type No.
Conditions
ST70-27F
Unit
Storage Temperature
Tstg
−40∼150
℃
Junction Temperature
Tj
150
℃
7000
W
Peak Surge Reverse Power
PRSM
Non-repetitive
10/1000μs
Peak Surge Reverse Current
IRSM
180
A
Maximum Reverse Voltage
VRM
23
V
24.3∼29.7
V
V
Electrical Characteristics Tl=25℃
100
Breakdown Voltage
VBR
IR=1mA
Clamping Voltage
VCL
IPP=180A
MAX 40
Off-State Current
IR
VR=VRM MAX
5
μA
ST70-27F
■CHARACTERISTIC DIAGRAMS
Breakdown Voltage
Clamping Voltage
30
100
50
Breakdown Voltage VBR〔V〕
Peak Pulse Current IP〔A〕
1000
500
10
5
1
0.5
〔
0.1
0.05
10/1000μs
TYP
〕
0.01
0.005
0.001
25
29
28
27
〔
25
27
29
31
33
35
0
37
Reverse Current
20
40
60
80
100
120
Junction Temp. Tj〔℃〕
140
160
Peak Surge Reverse Current
5000
20
Peak Surge Reverse Current IRSM〔A〕
10
5
Reverse Current IR〔μA〕
〕
26
Clamping Voltage VCL〔V〕
2
1
0.5
0.2
〔
0.1
VR=23V
TYP
〕
0.05
0.02
0
20
40
60
80
100
120
140
current form
160
IRSM
IRSM
2
0
2000
tp
non-repetitive
Tj=25
1000
500
200
100
50
20
0.02
0.01
0.05
0.1
Junction Temp. Tj〔℃〕
Junction Capacitance f-Cj
0.2
0.5
1
Pulse width tp〔ms〕
2
5
10
Junction Capacitance VR-Cj
20000
20000
10000
Junction Capacitance Cj〔pF〕
Junction Capacitance Cj〔pF〕
IR=1mA
TYP
5000
2000
1000
500
〔
200
VR=23V
TYP
〕
〔
10000
f=100kHz
TYP
〕
5000
2000
1000
500
100
1
2
5
10
20
50
Frequency f〔kHz〕
100
200
500
300
0.1
0.2
0.5
1
2
5
10
20
30
Reverse Applied Voltage VR〔V〕
101
Varistor
Axial Package
■OUTLINE DIMENSIONS
Package : AX06
φ0.6±0.05
VR-60B(A)
27.5±2
＋0.5
5−0
27.5±2
φ2.6±0.1
●Marking
Color code（ Orange）
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item Conditions
Symbol
Ratings
Unit
Storage Temperature
Tstg
−30∼125
℃
Junction Temperature
Tj
125
℃
Io
Ta=40℃
Sine wave
R-load
Commercial frequency
On glass-epoxy substrate
0.5
Arms
IFSM
50Hz Sine wave １cycle
Non-repetitive Tl=25℃
16
Arms
Average Rectified Forward
Current
Peak Surge Reverse Current
Electrical Characteristics Tl=25℃
Forward Voltage
Current
Thermal Resistance
102
VF
IF=1.0A
MAX1.5
V
I
V=0.2V
MAX20
μA
MAX156
℃／W
θja
Junction to ambient
VR-60B(A)
■CHARACTERISTIC DIAGRAMS
Power Dissipation
Forward Voltage
0.8
Tl=
25℃
125
℃
2
1
0.5
0.2
0.1
0.05
0.02
0.01
Power Dissipation P〔W〕
0.7
200
100
50
20
10
5
T l=
Forward Current IF〔mA〕
2000
1000
500
TYP
pulse measurement
〔
〕
〔
0.6
〕
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1.6
Forward Voltage VF〔V〕
Peak Surge Forward Current
Average Rectified Forward Current Io〔Arms〕
sine wave
16
0
10ms
14
non−repetitive
Tj=25
12
10
8
6
4
1
2
0.1
0.2
0.3
0.4
0.5
0.6
Average Rectified Forward Current Io〔Arms〕
0.7
Derating Curve Ta-lo
18
Peak Surge Forward Current IFSM〔Arms〕
sine wave
Tj=125℃
5
10
20
50
100
Cycle
0.7
sine wave
R−load
free in air
0.6
0.5
On glass-epoxi substrate
l
soldering land
3mmφ
l=24mm
0.4
0.3
0.2
0.1
0
0
50
100
Ambient Temperature Ta〔℃〕
130
Jubction Capacitance f-Cj
70
Junction Capacitance Cj〔pF〕
60
50
40
TYP
Tl=25
OSC=50mVrms
30
20
10
0
10
20
50
100
200
500 1000 2000
5000 10000
Frequency f〔kHz〕
103
Varistor
Axial Package
■OUTLINE DIMENSIONS
Package : AX06
φ0.6±0.05
VR-61B(A)
27.5±2
＋0.5
5−0
27.5±2
φ2.6±0.1
●Marking
Color code（ Red）
Color code（ Orange）
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item Conditions
Symbol
Ratings
Unit
Storage Temperature
Tstg
−30∼125
℃
Junction Temperature
Tj
125
℃
Io
Ta=40℃
Sine wave
R-load
Commercial frequency
On glass-epoxy substrate
0.15
Arms
IFSM
50Hz Sine wave １cycle
Non-repetitive Tl=25℃
7.5
Arms
Average Rectified Forward
Current
Peak Surge Forward Current
Electrical Characteristics Tl=25℃
Forward Voltage
Thermal Resistance
104
VF
θja
IF=1mA
2.05∼2.55
IF=10mA
2.50∼3.00
IF=70mA
2.85∼3.35
Junction to ambient
MAX
215
V
℃/W
VR-61B(A)
■CHARACTERISTIC DIAGRAMS
Power Dissipation
Forward Voltage
0.8
TYP
pulse measurement
0.7
〕
Power Dissipation P〔W〕
〔
200
100
50
20
Tl=
25℃
125
℃
10
5
T l=
Forward Current IF〔mA〕
1000
500
2
1
0.5
〔
0.6
sine wave
Tj=125℃
〕
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0
0
1
2
3
4
0
5
Forward Voltage VF〔V〕
Peak Surge Forward Current
Average Rectified Forward Current Io〔Arms〕
Peak Surge Forward Current IFSM〔Arms〕
sine wave
12
0
10ms
10
non−repetitive
Tj=25
8
6
4
2
0
2
5
0.25
Derating Curve Ta-lo
14
1
0.1
0.2
Average Rectified Forward Current Io〔Arms〕
10
20
50
100
Cycle
0.25
On glass-epoxi substrate
l
sine wave
R−load
free in air
0.20
soldering land
3mmφ
l=24mm
0.15
0.10
0.05
0
0
50
100
Ambient Temperature Ta〔℃〕
150
Jubction Capacitance f-cj
Junction Capacitance Cj〔pF〕
24
20
TYP
pulse measurement
OSC=50mVrms
16
12
8
4
0
20
50
100
200
500
1000
2000
5000 10000
Frequency f〔kHz〕
105
Varistor
Axial Package
■OUTLINE DIMENSIONS
Package : AX06
φ0.6±0.05
VR-51B(A)
27.5±2
＋0.5
5−0
27.5±2
φ2.6±0.1
●Marking
Color code（ Silver）
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
−30∼125
℃
Junction Temperature
Tj
125
℃
Io
Ta=40℃
Sine wave
R-load
Commercial frequency
On glass-epoxy substrate
0.15
Arms
IFSM
50Hz Sine wave １cycle
Non-repetitive Tl=25℃
7.5
Arms
Average Rectified Forward
Current
Peak Surge Reverse Current
Electrical Characteristics Tl=25℃
Forward Voltage
Thermal Resistance
106
VF
θja
IF=1mA
1.55∼2.05
IF=10mA
1.85∼2.35
IF=70mA
2.15∼2.65
Junction to ambient
MAX
270
V
℃/W
VR-51B(A)
■CHARACTERISTIC DIAGRAMS
Power Dissipation
Forward Voltage
0.7
1000
0.6
Power Dissipation P〔W〕
200
100
50
2
Tl= 2
10
5
5℃
20
Tl=
125
℃
Forward Current IF〔mA〕
500
TYP
pulse measurement
〔
1
0.5
〕
〔
〕
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0
0
1
2
3
4
0
5
Forward Voltage VF〔V〕
Peak Surge Forward Current
Average Rectified Forward Current Io〔Arms〕
sine wave
7
0
10ms
6
non−repetitive
Tj=25
5
4
3
2
1
0
1
2
5
0.1
0.2
Average Rectified Forward Current Io〔Arms〕
0.3
Derating Curve Ta-lo
8
Peak Surge Forward Current IFSM〔Arms〕
sine wave
Tj=125℃
10
20
50
100
Cycle
On glass-epoxi substrate
l
0.25
sine wave
R−load
free in air
0.2
soldering land
3mmφ
l=24mm
0.15
0.1
0.05
0
0
50
100
Ambient Temperature Ta〔℃〕
150
Jubction Capacitance f-cj
28
TYP
Tl=25
OSC=50mVrms
Junction Capacitance Cj〔pF〕
24
20
16
12
8
4
0
10
20
50
500 1000 2000
100 200
Frequency f〔kHz〕
5000 10000
107
Varistor
SMD
■OUTLINE DIMENSIONS
2.0
F1 1N
2.5±0.3
VR-61F1
1.5±0.2
Package : 1F
2.0
4.2
Date code
Type No., Class
Standard soldering pad
1.2±0.3
1.2±0.3
0.1±0.1
2.0±0.3
0.2
0.9
5.0±0.3
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Storage Temperature
Junction Temperature
Average Rectified
Forward Current
Ratings
Unit
Tstg
−55∼150
℃
Tj
150
℃
Io
Conditions
Ta＝25℃
Sine wave
R-load
Commercial
frequency
On alumina
substrate
0.37
On glass-epoxy
substrate
0.28
50Hz
Sine wave
Peak Surge Forward
Current
IFSM
10/200μs
Arms
7.5
Non-repetitive
60
10/1000μs
Arms
A
30
Electrical Characteristics Tl＝25℃
Forward Voltage
Junction Capacitance
VF
Cj
Thermal Resistance
θja
108
IF=1mA
2.05∼2.55
IF=10mA
2.50∼3.00
IF=70mA
2.85∼3.35
f=100kHz VD=1V OSC=50mVrms
Junction to
ambient
TYP 15
On alumina
substrate
MAX 108
On glass-epoxy
substrate
MAX
V
pF
℃/W
157
VR-61F1
■CHARACTERISTIC DIAGRAMS
Power Dissipation
Forward Voltage
1.8
TYP
pulse measurement
〔
〕
1.6
Power Dissipation P〔W〕
200
100
50
20
10
5
2
Tl=
25℃
Tl=
15
0℃
Forward Current IF〔mA〕
1000
500
1
0.5
〔
1.4
〕
1.2
1.0
0.8
0.6
0.4
0.2
0.2
0.1
0
0
1
2
3
4
0
5
Forward Voltage VF〔V〕
0.1
0.2
0.3
0.4
Average Rectified Forward Current Io〔Arms〕
0.5
Junction Capacitance f-cj
Peak Surge Forward Current
16
24
sine wave
14
0
Junction Capacitance Cj〔pF〕
Peak Surge Forward Current IFSM〔Arms〕
sine wave
Tj=150℃
10ms
12
non−repetitive
Tj=25℃
10
8
6
4
Tl=25℃
VD=1V
TYP
20
16
12
8
4
2
0
0
1
2
5
10
20
50
100
20
100
1000
10000
Frequency f〔kHz〕
Cycle
Derating Curve Ta-lo
Average Rectified Forward Current Io〔Arms〕
0.5
0.4
On giass-epoxi
substrate
On alumina
substrate
soldering land
2mm□
2mm□
conductor layer
35μm
20μm
substrate thickness
――
0.64mm
substrate
On
0.3
On
0.2
g la
s s -e
a lu
pox
mi
i su
na
bst
su
bs
r a te
tra
te
sine wave
R−load
free in air
0.1
0
0
50
100
Ambient Temperature Ta〔℃〕
150
109
Varistor
SMD
■OUTLINE DIMENSIONS
Package : 1Y
VRYA6
Type No.
6.6
Date code
1.8
1.1±0.2
1.6
2.8
Standard soldering pad
3.5±0.2
5±0.2
3.8±0.4
0.6±0.1
1.0±0.1
0.2±0.1
0.25±0.1
5±0.2
1.6
6A
95
2.5±0.2
1.8
1.1±0.2
8 MAX
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Storage Temperature
Junction Temperature
Average Rectified
Forward Current
Peak Surge Forward
Current
Ratings
Unit
Tstg
−30∼125
℃
Tj
125
℃
Io
Conditions
Ta=40℃
Sine wave
R-load
Commercial
frequency
1 element operation
310
2 elements operation
200
On glass-epoxy 1 element operation
substrate
2 elements operation
200
On alumina
substrate
50Hz Sine wave
IFSM
10/200μs mArms
130
Arms
8
Non-repetitive
2 elements series
operation
10/1000μs
65
A
30
Electrical Characteristics Tl=25℃
IF=1mA
Forward Voltage
VF
IF=10mA
IF=70mA
Junction Capacitance
Thermal Resistance
110
Cj
θja
1 element
2.05∼2.55
2 elements series
4.10∼5.10
1 element
2.50∼3.00
2 elements series
5.00∼6.00
1 element
2.85∼3.35
2 elements series
5.70∼6.60
TYP f=100kHz VD=0V OSC=50mVrms
Junction to
ambient
On alumina
substrate
On glass-epoxy
substrate
13
1 element operation
MAX 90
2 elements operation
MAX
150
1 element operation
MAX
150
2 elements operation
MAX
250
V
pF
℃/W
VRYA6
■CHARACTERISTIC DIAGRAMS
Power Dissipation
Forward Voltage
1.8
1.6
Power Dissipation P〔W〕
200
100
50
10
5
Tl=2
5℃
125
℃
20
T l=
Forward Current IF〔mA〕
1000
500
2
TYP
per one element
pulse measurement
1
0.5
sine wave
per one element
Tj=125℃
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.2
0.1
0
0
1
2
3
4
5
0
6
Forward Voltage VF〔V〕
8
sine wave
7
25
TYP
per one element
Junction Capacitance Cj〔pF〕
0
10ms
6
non−repetitive
2 elements
series operation
Tj=25℃
5
4
3
2
Tl=25℃
20
15
10
5
1
0
0
1
2
5
10
20
50
20
100
100
Derating Curve Ta-lo
On alumina On glass-epoxi
substrate substrate
sine wave
R−load
free in air
300
1e
en
25×25mm
to
ra
100
Ambient Temperature Ta〔℃〕
150
0.64mm
1.5mm
n
50
substrate
thickness
80
op
er
ati
on
tio
0
35μm
120
ra
0
20μm
2e
lem
en
ts
se
rie
s
160
pe
50
conductor
layer
200
to
n
100
1mm□
sine wave
R−load
free in air
en
soldering
land
tio
150
On glass-epoxi substrate
240
le m
pe
200
280
1e
substrate
size
le m
el
em
en
ts
se
rie
so
pe
ra
tio
n
Average Rectified Forward Current Io〔mArms〕
On alumina substrate
2
10000
Derating Curve Ta-lo
350
250
1000
Frequency f〔kHz〕
Cycle
Average Rectified Forward Current Io〔mArms〕
0.7
Junction Capacitance f-cj
Peak Surge Forward Current
Peak Surge Forward Current IFSM〔Arms〕
0.1
0.2
0.3
0.4
0.5
0.6
Average Rectified Forward Current Io〔Arms〕
40
0
0
50
100
Ambient Temperature Ta〔℃〕
150
111
Varistor
SMD
■OUTLINE DIMENSIONS
Package : 1Y
VRYA15
Type No.
6.6
Date code
1.8
1.1±0.2
0.2±0.1
1.6
2.8
Standard soldering pad
3.5±0.2
5±0.2
3.8±0.4
0.6±0.1
1.0±0.1
0.25±0.1
5±0.2
1.6
15A
95
2.5±0.2
1.8
1.1±0.2
8 MAX
Unit：mm
■RATINGS
Absolute Maximum Ratings
Item
Symbol
Storage Temperature
Junction Temperature
Average Rectified
Forward Current
Peak Surge Forward
Current
Ratings
Unit
Tstg
−30∼125
℃
Tj
125
℃
Io
Conditions
Ta=40℃
Sine wave
R-load
Commercial
frequency
1 element operation
140
2 elements operation
90
On glass-epoxy 1 element operation
substrate
2 elements operation
90
On alumina
substrate
50Hz Sine wave
IFSM
mArms
50
6.5
10/200μs Non-repetitive
2 elements series
operation
10/1000μs
50
Arms
A
24
Electrical Characteristics Tl=25℃
1 element
IF=1mA
Forward Voltage
VF
2 elements series
1 element
IF=10mA
2 elements series
1 element
IF=70mA
Junction Capacitance
Thermal Resistance
112
Cj
θja
2 elements series
Junction to
ambient
On glass-epoxy
substrate
10.25∼12.75
6.25∼7.50
V
12.50∼15.00
7.13∼8.37
14.25∼16.75
TYP 5
f=100kHz VD=0V OSC=50mVrms
On alumina
substrate
5.13∼6.37
1 element operation
MAX 90
2 elements operation
MAX
150
1 element operation
MAX
150
2 elements operation
MAX
250
pF
℃/W
VRYA15
■CHARACTERISTIC DIAGRAMS
Power Dissipation
Forward Voltage
1.8
1.6
50
20
Tl=
25℃
10
5
2
1
0.5
TYP
per one element
pulse measurement
sine wave
per one element
Tj=125℃
1.4
Power Dissipation P〔W〕
200
100
Tl=
125
℃
Forward Current IF〔mA〕
1000
500
1.2
1.0
0.8
0.6
0.4
0.2
0.2
0.1
0
0
2
4
6
8
10
0
12 Forward Voltage VF〔V〕
8
14
sine wave
7
0
non−repetitive
2 elements
series operation
Tj=25℃
5
4
3
2
TYP
per one element
12
Junction Capacitance Cj〔pF〕
10ms
6
Tl=25℃
10
8
6
4
2
1
0
0
1
2
5
10
20
50
20
100
100
On alumina substrate
On alumina On glass-epoxi
substrate substrate
sine wave
R−load
free in air
240
200
substrate
size
25×25mm
160
1.5mm
40
n
0.64mm
60
tio
150
substrate
thickness
2e
lem
en
ts
ser
ies
op
era
tio
n
ra
100
Ambient Temperature Ta〔℃〕
35μm
80
pe
50
20μm
100
to
0
conductor
layer
sine wave
R−load
free in air
en
40
1mm
On glass-epoxi substrate
120
em
1e
2e
lem
le m
en
en
ts s
to
eri
pe
es
op
ra
era
t io
tio
n
n
□
140
el
soldering
land
Average Rectified Forward Current Io〔mArms〕
Derating Curve Ta-lo
260
0
10000
1
Average Rectified Forward Current Io〔mArms〕
Derating Curve Ta-lo
80
1000
Frequency f〔kHz〕
Cycle
120
0.28
Junction Capacitance f-cj
Peak Surge Forward Current
Peak Surge Forward Current IFSM〔Arms〕
0.04
0.08
0.12
0.16
0.20
0.24
Average Rectified Forward Current Io〔Arms〕
20
0
0
50
100
Ambient Temperature Ta〔℃〕
150
113
Basic Ordering Quantities and Packing Standards
Basic Ordering Quantities
Classification
Type No.
Code No.
Quantity
Stick
Taping
Packing Quantities
Packing Box Dimensions〔mm〕
Quantity
／Box
Weight
〔kg〕
L
W
D
18,000
5.2
545
145
110
TSS
Surfacemounted
package
（Type 2F）
KP□−□
Three-terminal
insulated
package
KT□−□
KA series
（axial）
KA□−□
Surfacemounted
package
（Type 1F）
KL□−□
Surfacemounted
package
（Type M2F）
KU□−□
4103
60
○
4063
750
○
15,000
4.2
340
195
205
4073
3,000
○
36,000
9.2
395
245
395
4000
50
○
1,000
−
265
205
210
4100
50
○
3,000
−
545
145
100
4000
200
5,000
−
340
190
115
4103
100
15,000
2.3
545
145
110
4063
1,500
○
60,000
7.0
395
350
235
4073
7,500
○
90,000
10.8
395
245
395
4063
1,000
○
20,000
−
340
195
205
4073
4,000
○
48,000
−
395
245
395
4103
100
15,000
2.3
545
145
110
4063
1,500
○
60,000
7.0
395
350
235
4073
7,500
○
90,000
10.8
395
245
395
4060
4,000
○
4,000
1.5
255
78
95
4070
3,000
○
3,000
0.6
255
51
95
4081
5,000
○
5,000
1.5
330
40
275
4102
50
4,500
9.5
535
145
110
4062
250
○
3,000
6.3
385
205
245
4072
1,000
○
3,000
6.0
362
362
160
4103
100
15,000
2.3
545
145
110
4063
1,500
○
60,000
7.0
395
350
235
4073
7,500
○
90,000
10.8
395
245
395
4101
100
○
10,000
−
545
145
110
4102
100
○
10,000
−
545
145
110
4062
1,000
○
10,000
−
335
245
370
4072
2,000
○
20,000
−
395
245
385
4060
4,000
○
4,000
1.5
255
78
95
4070
3,000
○
3,000
0.6
255
51
95
4081
5,000
○
5,000
1.5
330
40
275
○
Trankillers
Surfacemounted
package
（Type 1F）
Single device
（axial）
STO - 220
ST□−□F1
ST□−□
ST□□−□□F
○
○
Silicon Varistors
Surfacemounted
package
(Type 1F）
Surfacemounted
package
（Type 1Y）
Single device
（axial）
114
VR−61F
○
VRYA□
VR−□B（A）
Standard Package
■ 1F，2F Type Device（Stick）
KP4L, 4N,
10L, 10N, 10R
15L, 15N, 15R
8LU, 10LU
VR-61F1
ST04-16F1, 27F1
KL3Z,KL3L, KL3N
KL3R, KL3LU
Type No.
Package No.
Order Code
Type 1F
Type 2F
4103
4103
Rubber end cap
520±0.5
520±0.8
Rubber end cap
Dimensions
Stick
Device
4.2±0.15
3.3±0.1
2.3
3.2
Device
2.7
5.5±0.15
3.9±0.1
Quantity
4.5
Material：PIastic
Material：PIastic
Standard capacity：100pcs／stick
Standard capacity：60pcs／stick
14
5
Standard
Package
110
Label
Dimensions
545
Material：Corrugated cardboard
Quantity
Standard capacity：15,000pcs／carton
（150sticks／carton）
Standard capacity：18,000pcs／carton
（300sticks／carton）
115
Standard Package
■ 1Y Type Device（Stick）
Type No.
VRYA6, 15
Package No.
Type 1Y
Order Code
4101, 4102
520±1
Rubber end cap
Dimensions
Device
Stick
12.5±0.5
5±0.5
10±0.5
5.7±0.4
Material：PIastic
Standard capacity：100pcs／stick
Quantity
14
5
Standard
Package
110
Label
Dimensions
545
Material：Corrugated cardboard
Quantity
116
Standard capacity：10,000pcs／carton
（100sticks／carton）
Standard Package
■ TO-221 Type Device（Stick）
KT10L, 10N, 10R
KT15N, 15R
KT40N, 40R
Package No.
Type TO-221
Order Code
4100
535±1
Type No.
Dimensions
Stick
2.0
4.5±0.2
2.5
26.6±0.2
10±0.2 10±0.2
0.6±0.1
0.6±0.1
Material：Hard transparent PVC
Standard capacity：50pcs／stick
Quantity
14
5
Standard
Package
110
Label
Dimensions
545
Material：Corrugated cardboard
Quantity
Standard capacity：3,000pcs／carton
（60sticks／carton）
117
Standard Package
■ STO-220 Type Device（Stick）
ST50V-27F
ST70-27F
Package No.
Type STO-220
Order Code
4102
535±0.1
Type No.
Dimensions
Stick
5.6
6.8±0.3
19±0.3
9.6
Material：Hard transparent PVC
Standard capacity：50pcs／stick
Quantity
Dimensions
14
5
Standard
Package
110
Label
535
Material：Corrugated cardboard
Quantity
118
Standard capacity：4,500pcs／carton
（90sticks／carton）
Standard Package
Reel sizeφ180（JEITA R15）／Reel sizeφ330（JEITA R25）
■CaseNo.1F Device (Reel)
Type No.
VR-61F1
ST04-16F1,27F1
KL3Z,KL3L,KL3N
KL3R,KL3LU
Package No.
Type 1F
4063
Order Code
4073
0.3
12
±0.2
5.65±0.05
Dimensions
2.2
9.5
Taping
（12mm wide）
1.5±0.1
4.0±0.1
φ1.5
Round feed hole
4.0±0.1
2.4±0.05
Material：Plastic
Standard capacity：1,500pcs／reel
Standard capacity：7,500pcs／reel
φ13±0.5
0°
12
φ80
2±0.5
Dimensions
φD
Quantity
Order code
Dimensions
φD
Reel
4063
4073
180±2
330±2
Label
13±0.3
15.4±1
Material：Cardboard
Trailer
Leader
and
Trailer
Device
Trailer
Leader
End
Start
40(min)
40(min)
200(min)
Dimensions
Standard
Package
395
235
Direction of feed
Label
Label
350
395
Quantity
245
395
Material：Corrugated cardboard
Material：Corrugated cardboard
Standard capacity：60,000pcs／carton
（40 reels／carton）
Standard capacity：90,000pcs／carton
(12 reels／carton）
Taping and reel dimensions comply with JEITA，RC−1009A
119
Standard Package
Reel sizeφ180（JEITA R15）／Reel sizeφ330（JEITA R25）
■CaseNo.2F Device (Reel)
Type No.
KP4L, 4N, UKP-10
10L, 10N, 10R UK-15
15L, 15N, 15R
8LU, 10LU
Package No.
Type 2F
4073
φ1.5
Round
feed hole
2 2
9.5
Dimensions
Taping
（12mm wide）
0.3
12±0.3
4.0±0.1
5.5±0.05 1.75±0.1
4063
Order Code
3.1±0.1
8±0.1
Material：Plastic
Standard capacity：750pcs／reel
Standard capacity：3,000pcs／reel
φ80
φ13±0.5
0°
12
Dimensions
φD
Quantity
Order code
4063
4073
180±2
330±2
Dimensions
Reel
Label
φD
13±0.3
Material：Cardboard
Trailer
Leader
and
Trailer
15.4±1
Device
Trailer
Leader
End
Start
10(min)
10(min)
200(min)
220
395
Direction of feed
Dimensions
Standard
Package
340
Quantity
245
395
Material：Corrugated cardboard
Material：Corrugated cardboard
Standard capacity：15,000pcs／carton
（20 reels／carton）
Standard capacity：36,000pcs／carton
（12 reels／carton）
Taping and reel dimensions comply with JEITA，RC−1009B
120
Label
Label
210
Standard Package
Reel sizeφ180（JEITA R15）／Reel sizeφ330（JEITA R25）
■CaseNo.M2F Device (Reel)
KU5L, 5N, 5R
KU10L, 10N, 10R, 10S, 10LU
KU15N, 15R
Type No.
Type M2F（DO214−AA）
Package No.
4073
φ1.5
Round
feed hole
2 2
9.5
Dimensions
Taping
（12mm wide）
0.3
12±0.3
4.0±0.1
5.5±0.05 1.75±0.1
4063
Order Code
2.2±0.1
8±0.1
Material：Plastic
Standard capacity：1,000pcs／reel
Standard capacity：4,000pcs／reel
φ80
φ13±0.5
0°
12
Dimensions
φD
Quantity
Order code
4063
4073
180±2
330±2
Dimensions
φD
Reel
Label
13±0.3
Material：Cardboard
15.4±1
Trailer
Leader
and
Trailer
Device
Trailer
Leader
End
Start
40(min)
40(min)
200(min)
Dimensions
Standard
Package
395
205
Direction of feed
Label
Label
195
340
Quantity
245
395
Material：Corrugated cardboard
Material：Corrugated cardboard
Standard capacity：20,000pcs／carton
（20 reels／carton）
Standard capacity：48,000pcs／carton
（12 reels／carton）
Taping and reel dimensions comply with JEITA，RC−1009B
121
Standard Package
Reel sizeφ250（JEITA R25）／Reel sizeφ330（JEITA R33）
■CaseNo.1Y Device (Reel)
Type No.
VRYA6, 15
UVRYA6
Package No.
Type 1Y
13
8.3
Dimensions
8±0.1
Quantity
5.3
Material：Plastic
4.0
Standard capacity：1,000pcs／reel
Standard capacity：2,000pcs／reel
φ80
φ13±0.5
0°
12
Dimensions
φD
Taping
（16mm wide）
0.3
16.0
7.5±0.1
φ1.5
±0.2
4.0±0.1
2 2
4072
1.75±0.1
4062
Order Code
Order code
4062
4072
250±2
330±2
Dimensions
Reel
φD
Label
17.5±1
Material：Cardboard
Trailer
Leader
and
Trailer
Device
1.6
Trailer
Leader
End
Start
40(min)
20(min)
380(min)
370
395
Direction of feed
Dimensions
Standard
Package
335
Quantity
245
395
Material：Corrugated cardboard
Material：Corrugated cardboard
Standard capacity：10,000pcs／carton
（10 reels／carton）
Standard capacity：20,000pcs／carton
（10 reels／carton）
Taping and reel dimensions comply with JEITA，RC−1009B
122
Label
Label
245
Standard Package
Reel sizeφ180（JEITA R24）／Reel sizeφ330（JEITA R24）
■CaseNo.STO-220 Device (Reel)
Type No.
ST50V-27F
ST70-27F
Package No.
Type STO-220
4062
4072
φ1.5+0.1
-0
4±0.1
2
Round
feed hole
±0.1
Dimensions
Taping
（16mm wide）
0.4
24.0±0.3
11.5±0.1
2±0.1
1.75±0.1
Order Code
5.0±0.1
12±0.1
Quantity
Standard capacity：250pcs／reel
Material：Plastic
Standard capacity：1,000pcs／reel
25.5±1.5
2.0±0.2
φ13±0.5
φＤ
φ80±1
0°
12
Dimensions
Order code
4062
4072
180±2
330±2
Dimensions
Reel
φD
Label
Material：Cardboard
Trailer
Leader
and
Trailer
Device
Trailer
Leader
End
Start
40(min)
20(min)
380(min)
Dimensions
Standard
Package
160
245
Direction of feed
Label
Label
205
385
Quantity
362
362
Material：Corrugated cardboard
Material：Corrugated cardboard
Standard capacity：3,000pcs／carton
（12 reels／carton）
Standard capacity：3,000pcs／carton
（3 reels／carton）
Taping and reel dimensions comply with JEITA，C−0806
123
Standard Package
■Axial Taping
VR-60B
（A）,UVR-61BF
VR-61B
（A）
VR-51B
（A）
ST04-16, 27
Type No.
AX06
Package No.
Tape Width
26mm
52mm
Order Code
4070
4060
White tape
Blue tape
White tape
26±1.5
Blue tape
＋1.5
52 −1
Tape
shift not
included
L2
（L1-L2=0±1）
1.2MAX 5±0.5
0.8MAX
6
φｄ
L0
L1
L2
φD
2.6±0.1
φd
0.6±0.05
124
5＋0.5
−0
L0
Dimensions
±1
φD
2.6±0.1
φd
0.6±0.05
Label
Label
51 M AX
Quantity
6
（L1-L2=0±1）
95MAX
Standard
Package
0.8MAX
±1
5＋0.5
−0
L0
Dimensions
φＤ
L0
3.2MAX
95MAX
Dimensions
3.2MAX
φｄ
φＤ
L1
5×20：100±2
1.2MAX 5±0.5
5×20：100±2
Tape shift
not included
M
255
AX
Standard capacity：3,000 pcs／carton
MA
78 M AX
255
X
Standard capacity：4,000 pcs／carton
Standard Package
■Radial Taping
VR-60B
（A）
, UVR-61BF
VR-61B
（A）
VR-51B
（A）
ST04-16,27
Type No.
AX06
Package No.
Panasert-compatible
4081
Order Code
0±2
11MAX 5.5+0.5
-0
2.5
12.7±1
12.5MIN 18+1
- 0.5
9+0.75
- 0.5
16±0.5
11MAX 19
1MAX 3
φ2.6±0.1
φ4
3.85
5+0.8
- 0.2
±0.7
0.7±0.2
0.6±0.05
±0.3
2MAX Dimensions
12.7±0.3
300MIN
Leader
Type No.
Class
Date code
Quantity
40
Quantity
K
A
Standard
Package
K
A
Label
275
※There are to be no more than 3 consecutive missing devices as shown
in the diagram above.
※There is at least 300 mm of leader at the start and the end of the reel.
33
0
Standard capacity：5,000 pcs／carton
125
MAIN PRODUCTS：
■SEMICONDUCTORS
RECTIFIER DlODE
HIGH SPEED RECTIFIRE DIODE
SWITCHING POWER TRANSISTOR
POWER MOSFET
SIDAC：BI- DIRECTIONARY DlODE THYRISTOR
IC＆POWER HYBRID IC
PHOTOCONDUCTIVE DRUM
■EQUIPMENT
RECTIFIER EQUIPMENT
UNINTERRUPTIBLE POWER SUPPLY
SWITCHING POWER SUPPLY
CONVERTER
COMPUTER CONTROL SYSTEM
■E - M PRODUCTS
ELECTRONIC CIRCUIT PRODUCT
DC SOLENOID
PROPORTIONAL SOLENOID
DAMPER
*Specifications are subject to change without notice.
SHINDENGEN ELECTRIC MFG. CO., LTD.
Ikebukuro YS Bldg., 13 - 23, 1- chome Minami- Ikebukuro, Toshima- ku, Tokyo 171- 0022 Japan
Phone : 03 - 5951- 8128
Facsimile : 03- 5951- 8126
URL http: //www.shindengen.co.jp
Printing in Japan 01915（SO）