25TTS...PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 25 A
DESCRIPTION/FEATURES
2
(A)
TO-220AB
The 25TTS.. High Voltage Series of silicon
Available
controlled rectifiers are specifically designed for
RoHS*
medium power switching and phase control
COMPLIANT
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.
1 (K) (G) 3
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
PRODUCT SUMMARY
VT at 16 A
< 1.25 V
ITSM
300 A
VRRM
800/1200 V
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
18
22
A
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
IRMS
VALUES
16
25
VRRM/VDRM
800/1200
ITSM
UNITS
A
V
300
A
1.25
V
dV/dt
500
V/µs
dI/dt
150
A/µs
- 40 to 125
°C
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VT
16 A, TJ = 25 °C
TJ
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
25TTS08PbF
800
800
25TTS12PbF
1200
1200
10
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94385
Revision: 11-Aug-08
For technical questions, contact: diodes-tech@vishay.com
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25TTS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 25 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
VALUES
TYP.
MAX.
TC = 93 °C, 180° conduction half sine wave
16
10 ms sine pulse, rated VRRM applied
300
UNITS
25
10 ms sine pulse, no voltage reapplied
350
10 ms sine pulse, rated VRRM applied
450
10 ms sine pulse, no voltage reapplied
630
A
Maximum I2t for fusing
I2 t
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
6300
A2√s
Maximum on-state voltage drop
VTM
16 A, TJ = 25 °C
1.25
V
12.0
mΩ
1.0
V
On-state slope resistance
rt
Threshold voltage
VT(TO)
Maximum reverse and direct leakage current
IRM/IDM
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
0.5
VR = Rated VRRM/VDRM
Holding current
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
Maximum latching current
IL
Anode supply = 6 V, resistive load
A2 s
10
-
100
mA
200
Maximum rate of rise of off-state voltage
dV/dt
500
V/µs
Maximum rate of rise of turned-on current
dI/dt
150
A/µs
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
TEST CONDITIONS
VALUES
UNITS
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 10 °C
60
Anode supply = 6 V, resistive load, TJ = 25 °C
45
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Anode supply = 6 V, resistive load, TJ = - 10 °C
2.5
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
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TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
For technical questions, contact: diodes-tech@vishay.com
0.9
4
µs
110
Document Number: 94385
Revision: 11-Aug-08
25TTS...PbF High Voltage Series
Phase Control SCR, 25 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
DC operation
Marking device
Document Number: 94385
Revision: 11-Aug-08
UNITS
- 40 to 125
°C
1.1
°C/W
62
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
0.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Case style TO-220AB
For technical questions, contact: diodes-tech@vishay.com
25TTS08
25TTS12
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25TTS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 25 A
35
25TTS.. Series
RthJC (DC) = 1.1 °C/W
Maximum Average On-State
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
130
120
Ø
110
Conduction angle
100
180°
90°
60°
30°
20
RMS limit
15
Ø
10
Conduction period
5
25TTS.. Series
TJ = 125 °C
0
0
5
15
10
0
20
5
10
15
20
25
30
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
350
At any rated load condition and with
rated VRRM applied following surge
25TTS.. Series
RthJC (DC) = 1.1 °C/W
120
Peak Half Sine Wave
On-State Current (A)
Maximum Allowable Case
Temperature (°C)
25
120°
90
Ø
110
Conduction period
100
30°
90
120°
60°
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
300
250
200
DC
25TTS.. Series
180°
90°
80
150
0
5
15
10
20
25
30
1
10
100
Average On-State Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
25
400
15
RMS limit
10
Ø
Conduction angle
5
0
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4
4
8
12
16
20
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
300
250
200
150
25TTS.. Series
TJ = 125 °C
0
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
350
180°
120°
90°
60°
30°
20
Peak Half Sine Wave
On-State Current (A)
Maximum Average On-State
Power Loss (W)
DC
180°
120°
90°
60°
30°
30
25TTS.. Series
100
0.01
0.1
1
Average On-State Current (A)
Pulse Train Duration (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94385
Revision: 11-Aug-08
25TTS...PbF High Voltage Series
Phase Control SCR, 25 A
Vishay High Power Products
Instantaneous On-State Current (A)
1000
100
TJ = 25 °C
TJ = 125 °C
10
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 10 V, 20 Ω
tr = 0.5 µs, tp ≥ 6 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 65 Ω
tr = 1 µs, tp ≥ 6 µs
VGD
IGD
0.1
0.001
(a)
(b)
TJ = 10 °C
1
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ = 25 °C
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(4)
0.1
(2)
(1)
Frequency limited by PG(AV)
25TTS.. Series
0.01
(3)
1
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
ZthJC - Transient
Thermal Impedance (°C/W)
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single pulse
0.01
0.0001
0.001
0.01
25TTS.. Series
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
Document Number: 94385
Revision: 11-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
25TTS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 25 A
ORDERING INFORMATION TABLE
Device code
25
T
T
S
12
PbF
1
2
3
4
5
6
1
-
2
-
Current rating (25 = 25 A)
Circuit configuration:
T = Single thyristor
3
-
4
-
5
-
6
-
Package:
T = TO-220AB
Type of silicon:
S = Standard recovery rectifier
Voltage rating
08 = 800 V
12 = 1200 V
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95222
Part marking information
http://www.vishay.com/doc?95225
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94385
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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Disclaimer
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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