HCF4053B TRIPLE 2-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ LOW "ON" RESISTANCE : 125Ω (Typ.) OVER 15V p.p SIGNAL-INPUT RANGE FOR VDD - VEE = 15V HIGH "OFF" RESISTANCE : CHANNEL LEAKAGE ± 100pA (Typ.) at VDD - VEE = 18V BINARY ADDRESS DECODING ON CHIP HIGH DEGREE OF LINEARITY : < 0.5% DISTORTION TYP. at fIS = 1KHz, VIS = 5 Vpp, VDD - VSS > 10V, RL = 10KΩ VERY LOW QUIESCENT POWER DISSIPATION UNDER ALL DIGITAL CONTROL INPUT AND SUPPLY CONDITIONS : 0.2 µW (Typ.) at VDD - VSS = VDD - VEE =10V MATCHED SWITCH CHARACTERISTICS : RON = 5Ω (Typ.) FOR VDD - VEE = 15V WIDE RANGE OF DIGITAL AND ANALOG SIGNAL LEVELS : DIGITAL 3 to 20, ANALOG TO 20V p.p. QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" ) (s t c u d o r P e t e l o s b O DESCRIPTION The HCF4053B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor ) s ( ct DIP SOP PACKAGE TUBE t e l o DIP SOP u d o r P e ORDER CODES HCF4053BEY HCF4053BM1 T&R HCF4053M013TR s b O technology available in DIP and SOP packages. The HCF4053B analog multiplexer/demultiplexer is a digitally controlled analog switch having low ON impedance and very low OFF leakage current. This multiplexer circuit dissipate extremely low quiescent power over the full VDD - VSS and VDD VEE supply voltage range, independent of the logic state of the control signals. When a logic "1" is present at the inhibit input terminal all channel are off. This device is a triple 2-channel multiplexer having three separate digital control inputs, A, B, and C, and an inhibit input. Each control input selects one of a pair of channels which are connected in a single pole double-throw configuration. PIN CONNECTION October 2002 1/10 HCF4053B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 11, 10, 9 6 12, 13, 2, 1, 5, 3 14 15 4 A, B, C INH NAME AND FUNCTION IN/OUT Binary Control Inputs Inhibit Inputs ax,ay,bx,by,cx,cy Input/ Output ax or ay bx or by cx or cy 7 OUT/IN OUT/IN OUT/IN VEE 8 VSS Negative Supply Voltage 16 VDD Positive Supply Voltage Supply Voltage u d o TRUTH TABLE INHIBIT C or B or A 0 0 1 0 1 X FUNCTIONAL DIAGRAM ) (s t c u d o r P e t e l o s b O 2/10 r P e t e l o X : Don’t Care s b O ) s ( ct ax or bx or cx ay or by or cy NONE HCF4053B ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Value Supply Voltage VI DC Input Voltage II DC Input Current Unit -0.5 to +22 V -0.5 to VDD + 0.5 ± 10 V mA 500 (*) 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C PD Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C ) s ( ct u d o RECOMMENDED OPERATING CONDITIONS Symbol VDD Parameter Supply Voltage VI Input Voltage Top Operating Temperature e t e ol ) (s Pr Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C s b O t c u d o r P e t e l o s b O 3/10 HCF4053B DC SPECIFICATIONS Test Condition Symbol IL Parameter OFF* OFF* Resistance ∆RON (between any 2 of 4 switches) Input Capacitance CO Output Capacitance CIO Feed through l o s ete b O CI 5 10 20 100 150 300 600 3000 150 300 600 3000 µA 470 180 125 10 10 5 ±0.1 1050 400 280 1200 520 360 1200 520 360 Ω e t e ol 0 0 0 0 0 0 18 o r P Input Leakage Current Input Capacitance 0.04 0.04 0.04 0.08 0 < VI < VDD )- -5 s ( t c du Input High Voltage 5 10 15 20 0 = VDD thru 1KΩ VEE = VSS RL = 1KΩ to VSS IIS < 2µA (on all OFF channels) VI = 0/18V Min. s b O 5 ±0.1 100 Min. Max. Min. Max. ) s ( t c u d o r P 100 Ω 1000 1000 nA 1000 1000 nA 5 pF 9 0.2 5 10 15 5 10 15 1.5 3 4 3.5 7 11 18 * Determined by minimum feasible leakage measurement for automating testing. 4/10 -40 to 85°C -55 to 125°C Unit Max. 0 -5 TA = 25°C Typ. 5 10 15 5 10 15 18 CONTROL (Address or Inhibit) Input Low Voltage VIL IIH, IIL VDD (V) 0 < VI < VDD Channel Leakage Current (All Channel OFF) (COMMON O/I) Channel Leakage Current (Any Channel OFF) CI VIH VSS (V) Quiescent Device Current (all switches ON or all switches OFF) SWITCH RON Resistance ∆ON VEE (V) VIS (V) Value 1.5 3 4 3.5 7 11 ±10-3 ±0.1 5 7.5 1.5 3 4 3.5 7 11 ±1 V V ±1 µA pF HCF4053B DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, all input square wave rise and fall time = 20 ns ) Test Condition Parameter RL (KΩ) VEE (V) Propagation Delay Time (signal input to output) Frequency Response Channel "ON" (sine wave input) at 20 log VO/VI = - 3dB Feed through (all channels OFF) at 20 log VO/VI = - 40dB Frequency Signal Crosstalk at 20 log VO/VI = -40dB fI (KHz) 1 = VSS 5(*) 1 = VSS 10 CONTROL (Address or Inhibit) Propagation Delay: 0 Address to Signal 0 OUT (Channels ON 0 or OFF) -5 Propagation Delay: 0 Inhibit to Signal OUT 0 1 (Channel turning ON) 0 -10 Propagation Delay: 0 Inhibit to Signal OUT 0 10 (Channel turning 0 OFF) -10 1 ) s ( ct du e t e ol o r P s b O Address or Inhibit to Signal Crosstalk 0 2(*) 3(*) 5(*) 10 (1) Min. Typ. Max. 5 10 15 30 15 11 10 5(*) o s b 0 0 0 0 0 0 0 0 0 VO at Common OUT/IN VO at any channel VO at Common OUT/IN VO at any channel Between any 2 Sections (IN pin 2, OUT pin 14) Between any 2 Sections (lN pin 15, OUT pin 14) e t e l 10 -O Unit VDD (V) 10 5(*) 1 Sine Wave Distortion = VSS fIS = 1KHz Sine Wave VSS (V) VDD 200 = VSS VI (V) Value MHz ) s ( ct 60 10 du o r P MHz 8 2.5 MHz 6 0.3 0.2 0.12 5 10 15 5 5 10 15 5 5 10 15 5 360 160 120 225 360 160 120 200 200 90 70 130 VC = VDD-VSS (square wave) ns 25 5 10 15 10 60 30 20 65 % 720 320 240 450 720 320 240 400 450 210 160 300 ns ns ns mV peak (1) Both ends of channel. * Peak to Peak voltage symmetrical about (VDD - VEE ) /2 5/10 HCF4053B TYPICAL BIAS VOLTAGES ) s ( ct u d o r P e The ADDRESS (digital-control inputs) and INHIBIT logic levels are : "0"=VSS and "1"=VDD. The analog signal (through the TG) may swing from VEE to VDD SPECIAL CONSIDERATIONS Control of analog signals up to 20V peak to peak can be achieved by digital signal amplitudes of 4.5 to 20V (if VDD - VSS = 3V, a VDD - VEE of up to 13V can be controlled; for VDD - VEE level differences above 13V, a VDD - VSS of at least 4.5V is required. For example, if VDD = +5, VSS = 0, and VEE = -13.5, analog signals from -13.5V to 4.5V can be controlled by digital inputs of 0 to 4.5V. In TEST CIRCUIT ) (s t c u d o r P e t e l o s b O CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) 6/10 t e l o certain applications, the external load resistor current may include both VDD and signal-line components. To avoid drawing VDD current when switch current flows into the transmission gate inputs, the voltage drop across the bidirectional switch must not exceed 0,8V (calculated from RON values shown in DC SPECIFICATIONS). No VDD current will flow through RL if the switch current flows into leads 4, 14 and 15. s b O HCF4053B WAVEFORM 1 : CHANNEL BEING TURNED ON (RL = 1KΩ, f=1MHz; 50% duty cycle) ) s ( ct u d o r P e t e l o s b O WAVEFORM 2 : CHANNEL BEING TURNED OFF (RL = 1KΩ, f=1MHz; 50% duty cycle) ) (s t c u d o r P e t e l o s b O 7/10 HCF4053B Plastic DIP-16 (0.25) MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 0.77 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D ) s ( ct 20 E 8.5 e 2.54 e3 17.78 u d o 0.335 7.1 I 5.1 s ( t c 1.27 e t e ol bs O ) 3.3 Z Pr 0.100 F L 0.787 0.700 0.280 0.201 0.130 0.050 u d o r P e t e l o s b O P001C 8/10 HCF4053B SO-16 MECHANICAL DATA mm. DIM. MIN. TYP A inch MAX. MIN. TYP. a1 1.75 MAX. 0.1 0.068 0.2 a2 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 c1 45˚ (typ.) D 9.8 E 5.8 ) s ( ct 0.019 e 1.27 e3 8.89 10 0.385 6.2 0.228 4.0 G 4.6 L 0.5 s b O 5.3 1.27 ) (s ete ol 3.8 S Pr 0.393 0.244 0.050 F M u d o 0.62 0.350 0.149 0.157 0.181 0.208 0.019 0.050 0.024 8 ˚ (max.) t c u d o r P e t e l o s b O PO13H 9/10 HCF4053B ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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