IRL2703

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PD - 9.1359A
IRL2703
HEXFET® Power MOSFET
l
l
l
l
l
l
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 30V
RDS(on) = 0.04Ω
G
ID = 24A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
24
17
96
45
0.30
±16
77
14
4.5
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.50
––––
3.3
––––
62
°C/W
8/27/97
IRL2703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Min.
30
–––
–––
–––
1.0
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
I GSS
Typ.
–––
0.030
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.5
140
12
20
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.040
VGS = 10V, ID = 14A „
Ω
0.060
VGS = 4.5V, I D = 12A „
–––
V
VDS = VGS , ID = 250µA
–––
S
VDS = 25V, I D = 14A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
100
V GS = 16V
nA
-100
VGS = -16V
15
ID = 14A
4.6
nC VDS = 24V
9.3
V GS = 4.5V, See Fig. 6 and 13 „
–––
VDD = 15V
–––
I D = 14A
ns
–––
RG = 12Ω, VGS =4.5V
–––
RD = 1.0Ω, See Fig. 10 „
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
7.5 –––
and center of die contact
450 –––
VGS = 0V
210 –––
pF
VDS = 25V
110 –––
ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L = 570µH
RG = 25Ω, IAS = 14A. (See Figure 12)
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 24
showing the
A
G
integral reverse
––– –––
96
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, I S = 14A, VGS = 0V „
––– 65
97
ns
TJ = 25°C, I F = 14A
––– 140 210
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ƒ I SD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRL2703
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
1
2 .5V
2 0µ s PU L SE W ID TH
T J = 2 5°C
0.1
0.1
1
10
100
10
0.1
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
T J = 2 5 °C
T J = 1 7 5 °C
10
1
V DS = 1 5 V
2 0 µ s P U L S E W ID T H
5
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
2.0
4
1
V D S , Drain-to-S ource Voltage (V )
100
3
2 0µ s PU L SE W ID TH
T J = 1 75 °C
0.1
A
100
Fig 1. Typical Output Characteristics
0.1
2.5V
1
V D S , Drain-to-S ource Voltage (V )
2
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , D ra in -to -S o u rce C u rre n t (A )
ID , D ra in -to -S o u rc e C u rre n t (A )
TOP
10
A
I D = 24 A
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2703
V GS
C is s
C rss
C oss
C , C a p a c ita n c e (p F )
800
15
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH OR TE D
= C gd
= C d s + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
1000
C i ss
600
C o ss
400
C rs s
200
0
A
1
10
I D = 14A
V DS = 2 4V
V DS = 1 5V
12
9
6
3
FO R TEST CIR CU IT
SEE FIG UR E 13
0
100
0
V D S , D rain-to-S ource Voltage (V )
8
12
16
A
20
Q G , T otal Gate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
4
TJ = 17 5°C
TJ = 2 5°C
10
100
10µ s
10 0µs
10
1 ms
VG S = 0 V
1
0.4
0.8
1.2
1.6
2.0
V S D , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.4
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
1 0m s
A
10
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL2703
24
RD
VDS
VGS
I D , D ra in C u rre n t (A m p s)
20
D.U.T.
RG
+
-VDD
16
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
12
8
Fig 10a. Switching Time Test Circuit
VDS
4
90%
A
0
25
50
75
100
125
150
175
TC , Case Temperature (°C )
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Th erm al R esp on se (Z th JC )
10
D = 0.5 0
1
0 .2 0
0.1 0
0.05
0.1
PD M
0.02
0 .0 1
t
S IN G L E P U LS E
( TH E RM A L RE S P O N S E )
1
t2
N o te s :
1 . D u ty fa c to r D = t 1 / t 2
0.01
0.00001
2 . P e a k T J = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (se c)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
IRL2703
D.U.T.
RG
+
V
- DD
IAS
5.0 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
160
L
VDS
TO P
B OTTO M
120
80
40
V D D = 1 5V
0
25
A
50
tp
75
100
125
150
Starting TJ , Junction T emperature (°C)
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
QG
4.5 V
QGS
ID
5.7 A
9 .9A
14A
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRL2703
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRL2703
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )
-B -
3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A -
4
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 )
M IN
1
2
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
3X
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN
3
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )
0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )
3X
M
B A
M
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 -A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E X AM PL E : T H IS I S A N IR F1 010
W IT H A S S E MB LY
L OT CO D E 9 B1M
A
I NT E RN A TIO N AL
R E C TIF IE R
LOG O
A SS E MB LY
LOT C OD E
P AR T NU M BE R
IRF 10 10
9246
9B 1 M
D A TE C OD E
(Y YW W )
Y Y = YE A R
W W = W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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