PD - 9.543C
IRFPG50
HEXFET® Power MOSFET
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1
10/29/97
IRFPG50
2
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IRFPG50
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3
IRFPG50
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
10us
10
100us
1ms
1
10ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating
Area
4
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IRFPG50
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5
IRFPG50
6
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IRFPG50
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFPG50
TO-247AC Package Details
-D -
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
-B -
0 .25 (.0 1 0) M
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
4
D B M
-A 5 .5 0 (.2 1 7 )
2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )
1
2
NOT ES :
5. 50 (.2 17 )
4. 50 (.1 77 )
2X
1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
T O-247-A C.
3
-C -
1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )
2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
2X
5 .45 (.2 1 5)
2X
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
0 .8 0 (. 03 1 )
3 X 0 .4 0 (. 01 6 )
1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0 .25 (.0 10 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
LEAD AS SIGN MENT S
2.6 0 (.10 2 )
2.2 0 (.08 7 )
C A S
1
2
3
4
-
G ATE
DRAIN
SO URCE
DRAIN
Part Marking
E XAM P LE : T H IS IS A N IR FP E3 0
W IT H AS SE MB L Y
L O T C O D E 3 A1 Q
A
IN TER N AT IO N AL
R EC T IF IER
LOGO
P AR T N U M B ER
IR F PE 3 0
3 A1 Q 9 3 0 2
A S SEM B L Y
LOT COD E
D A TE C O D E
(Y YW W )
YY = YE A R
W W W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice.
10/97
8
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