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The document and process conversion measures
necessary to comply with this revision shall be
completed by 16 April 2001.
INCH-POUND
MIL-PRF-38535E
Amendment 5
16 January 2001
SUPERSEDING
Amendment 4
18 February 2000
PERFORMANCE SPECIFICATION
INTEGRATED CIRCUITS (MICROCIRCUITS) MANUFACTURING,
GENERAL SPECIFICATION FOR
This amendment forms a part of MIL-PRF-38535E, dated
1 December 1997, and is approved for use by all
Departments and Agencies of the Department of Defense.
The attached insertable replacement pages listed below are replacements for the stipulated pages. When the new
pages have been entered in the document, insert the amendments as the cover sheet to the specification.
Replacement Pages
33
34
Pages replaced
33
without change
Page 1
1.1, add to end of paragraph, “Class T is not for use in NASA manned, satellite, or launch vehicle programs without
written permission from the applicable NASA Project Office (i.e., cognizant EEE parts authority).”
Page 2
2.3 add JEDEC publication to EIA listing
JESD 22-A114 - Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM).
Page 3
3.2.1a add
9. If applicable, the certificate shall include a statement indicating that alternate die/fab requirements are being
used (”QD” certification mark, see 3.6.3).
Page 7
3.4.1.4.1, add sentence, “Manufacturer’s package element material and finish shall be in accordance with A.3.5.6
unless otherwise specified in the manufacturer’s QM plan.”
3.4.3, line 2, delete (class N, Q, or V) and substitute (class N, Q, V or T).
Page 8
Add new RHA designator as follows:
RHA level designator
P
Total dose (Rad (Si))
4
3 x 10
1 of 5
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5962
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MIL-PRF-38535E
AMENDMENT 5
Page 8 – Continued
Add last sentence to paragraph as follows:
3.4.8 Performance requirements for Class T devices. The manufacturer of a Class T device shall be a certified and
qualified QML manufacturer approved by the qualifying activity. The Class T devices shall be manufactured on a
certified and qualified QML line as defined in 3.4 herein. The Class T flow shall be developed and approved through
the manufacturer’s TRB; shall be qualified; shall be defined in the manufacturer’s QM plan; and be approved by the
qualifying activity. Each technology flow (e.g., wafer fabrication, assembly, screening, qualification, TCI, etc) shall be
developed and documented taking into account the application requirements of the customers. The device
manufacturer shall demonstrate that the failure mode and mechanisms of the technologies are considered when
developing the technology flow. Copies of each technology flow including supporting documentation shall be
reviewed and approved by the qualifying activity prior to listing as an approved source of supply. Any modification to
the approved technology flow shall be reviewed and approved by the TRB and the qualifying activity. The
technology flow and supporting documentation shall be made available to the systems manufacturers, the
government, and customers for review. The customer shall be notified of major changes which affect form, fit, or
function of the device defined within the device specification and the manufacturer’s QM plan. Class T is not for use
in NASA manned, satellite, or launch vehicle programs without written permission from the applicable NASA Project
Office (i.e., cognizant EEE parts authority).
3.4.8.1 Class T radiation requirements. The device specification shall define all the radiation features offered by the
QML manufacturer for the Class T device. QML manufacturers supplying Class T devices shall meet the
requirements of MIL-STD-883 TM 1019 and shall document in the QM Plan the radiation hardness assurance level
specified for the device offered. All devices supplied to this product class shall be marked with a rad hard designator
as specified in 3.4.3 herein. Traceability shall be established such that there is a technical basis for compliance to
the specified RHA level designator as marked on the device.
3.6c, delete and replace as follows:
3.6c “Q”, “QML” or “QD” certification mark (see 3.6.3)
Page 9
3.6.2a, add “T” to list of Device class designators.
3.6.2a, add “P” to list of RHA designators.
Page 10
3.6.2.1, line 1, delete “Letters M, D, L, R, F, G, or H...” and substitute “Letters M, D, P, L, R, F, G, or H...”
3.6.2.3, delete Example PIN “5962-XXXXXZZ(N, Q, V (B or S))YY” and substitute as follows:
“5962-XXXXXZZ(N, Q, V, T (B or S))YY”
st
3.6.3 Add after 1 sentence.
QML manufacturers shall request qualifying activity approval for DMS product using the alternate die/fab
requirements of A.3.2.2 or other alternatives. Upon approval the manufacturer shall use the “QD” certification mark
in lieu of the “Q” or “QML” mark.
Page 11
Delete 3.6.7.2 and replace as follows:
*
3.6.7.2 Electrostatic Discharge Sensitivity (ESD) identifier. ESD classification marking is not required. The
manufacturer will have an option of no ESD marking, marking a single ESD triangle or marking in accordance with
the ESD device classification (i.e., class 1 - one ∆; class 2 - two ∆'s; class 3 - no marking) defined in test method
3015 of MIL-STD-883. Because it may no longer be possible to determine the ESD classification from the part
marking, the Device Discharge Sensitivity classification, will have to be obtained through MIL-HDBK-103 or QML38535.
2
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MIL-PRF-38535E
AMENDMENT 5
Page 12
Delete 4.2.3 and replace as follows:
*
4.2.3 Electrostatic discharge sensitivity. Electrostatic discharge sensitivity testing shall be done in accordance
with test method 3015 of MIL-STD-883 and the device specification. The testing procedure defined within JESD-22A114 may be used as an option in lieu of method 3015 provided the manufacturer is able to demonstrate correlation
between the 2 methods. In addition the reported sensitivity classification levels shall be the ones defined within test
method 3015 (see 3.6.7.2). Unless otherwise specified, tests shall be performed for initial qualification and product
redesign as a minimum.
Page 13
Add last sentence to paragraph:
6.1.1 Class T. As the requirements for class level T are specified in the manufacturer’s Quality Management (QM)
Plan for each technology, the user is cautioned to review the manufacturer's QM Plan to assure that the part being
acquired meets the requirements/reliability of the system application. Class T is not for use in NASA manned,
satellite, or launch vehicle programs without written permission from the applicable NASA Project Office (i.e.,
cognizant EEE parts authority).
Page 18
Add last sentence to paragraph:
6.2.31 Class T. Class T is a quality level whose requirements are defined by paragraph 3.4.8 herein and as
documented on an SMD. Class T is not for use in NASA manned, satellite, or launch vehicle programs without
written permission from the applicable NASA Project Office (i.e., cognizant EEE parts authority).
Page 22
*
A.2.2.1 Delete MIL-I-23011 in its entirety.
Delete MIL-STD-973 in its entirety.
Delete MIL-STD-1835 title and replace as follows:
MIL-STD-1835 – Interface Standard Electronic Component Case Outlines
Page 23
*
A.2.3 Non-Government publications, add
SOCIETY OF AUTOMOTIVE ENGINEERS
SAE-AMS-I-23011
-
Iron-Nickel Alloys for Sealing to Glasses and Ceramics.
(Applications for copies of SAE publications should be addressed to the Society of Automotive Engineers,
400 Commonwealth Dr., Warrendale, PA 15096-0001)
Page 27
Delete A.3.2.2 and replace as follows:
A.3.2.2 Alternate Die/fabrication requirements. When deemed necessary by the preparing or acquiring activity,
(e.g., a class M SMD device, a DSCC drawing device, an 883 compliant device or a QPL/QML device or a unique
package/die combination is not available from a DSCC drawing, SMD, QML, or QPL source that meets the full wafer
fabrication requirements of this appendix), the DSCC drawing, SMD, JAN slash sheet or other procurement
document may be modified to provide a source for logistics support. This modification will allow either a detailed
certificate of compliance (itemized listing of die fabrication requirements from this appendix - see example in
A.3.2.2.1 herein) or a die evaluation as defined by paragraph A.3.2.2.2 herein to be used in lieu of meeting the full
die/fabrication requirements of this appendix. The manufacturer that meets the die/fabrication requirements of
A.3.2.2.1 or A.3.2.2.2 is required to perform QCI testing of Groups C and D (and E if applicable) on the first
inspection lot of each wafer lot and shall replace the “C” certification mark with a “D” certification mark. An additional
complete Group D test is not required if the manufacturer already has Group D coverage on the package family,
however, Subgroups D3 and D4 shall be required on the first inspection lot of the wafer lot. For excess die from the
evaluated wafer lot, an additional Group C and Group D (subgroups D3 and D4 only) tests are not required for
subsequent inspection lots built solely from die from that wafer lot. If the product is built in full compliance to the
requirements of this appendix (the alternate die/fab allowance of this paragraph is not being used), the “C”
certification mark shall be used on the device.
3
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MIL-PRF-38535E
AMENDMENT 5
Page 29
A.3.3.1a Add
(9). If applicable, the certificate shall include a statement indicating that alternate die/fab requirements are
being used, see A.3.2.2 (”D” cert mark).
Page 30
A.3.4.1.3 Add new RHA designator as follows:
RHA level designator
Total dose (Rad (Si))
4
P
3 x 10
*
A.3.4.1.4 Modify paragraphs A.3.4.1.4 to add reference to JESD-22-A114:
from: “…test method 3015 of MIL-STD-883 …”
to: “…test method 3015 of MIL-STD-883. The test procedure defined within JESD-22-A114 (see A.4.4.2.8) may
be used but the classification levels defined below must be reported.”
Page 31
Delete A.3.4.2 and replace as follows:
*
A.3.4.2 Changes and notification of change to product or quality assurance program. The manufacturer shall be
responsible for the implementation of any major changes(s) or Class 1 changes of the product or quality assurance
program which may affect performance, quality, reliability, radiation hardness assurance (when specified), ESDS
class or interchangeability (see table A-1). The information needed to support these changes shall include
acceptable engineering data, quality conformance inspection data, or a test plan sufficient to demonstrate that the
changes(s) will not adversely affect performance, quality, reliability, interchangeability, radiation hardness, or
electrostatic discharge sensitivity and that the product will continue to meet the specification requirements.
Notification to the acquiring activity of change of product involving devices acquired to any detail
specification/drawing/data sheet is required for class 1 changes. Class 1 changes are those changes that may
affect the performance, quality, reliability, or interchangeability of the product. Major changes as defined in Table A1 shall as a minimum be reviewed to determine whether notification to the users is required. This notification to the
acquiring activity shall be made at the time of acceptance of a new order or delivery of an existing order by the
manufacturer. The manufacturer may make notification of this change of product through the GIDEP using the
Product Change Notice, in any case the manufacturer shall assure that all acquiring activities for this product are
notified.
Delete A.3.4.2.1 in its entirety.
Page 35
*
A.3.5.6.2 Lead or terminal material, delete type A, B and G and replace as follows:
a. Type A: Iron-Nickel-Cobalt alloy: SAE-AMS-I-23011, class 1, ASTM F15
b. Type B: Iron-nickel alloy (41 percent nickel): SAE-AMS-I-23011, class 5, ASTM F30
g. Type G: Iron-nickel alloy (50.5 percent nickel): SAE-AMS-I-23011, class 2, ASTM F30
Page 40
A.3.6.2.2, line 1, delete “Letters M, D, L, R, F, G, or H...” and substitute “Letters M, D, P, L, R, F, G, or H...”
Page 41
A.3.6.2.7, delete “or H” 4 places under “Lead frame or terminal material and finish”.
4
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MIL-PRF-38535E
AMENDMENT 5
Page 42
Delete A.3.6.9.2 and replace as follows:
*
A.3.6.9.2 Electrostatic discharge sensitivity identifier. Microcircuits shall be ESDS classified in accordance with
A.3.4.1.4, however, ESD classification marking is not required. The manufacturer will have an option of no ESD
marking, marking a single ESD triangle or marking in accordance with the ESD device classification (i.e., class 1 one ∆; class 2 - two ∆'s; class 3 - no marking) defined in test method 3015 of MIL-STD-883. Because it may no
longer be possible to determine the ESD classification from the part marking, the device Discharge Sensitivity
Classification will have to be obtained through MIL-HDBK-103 or QML-38535.
Page 48
Delete A.4.4.2.8 and replace as follows:
*
A.4.4.2.8 Electrostatic discharge sensitivity. Electrostatic discharge sensitivity classification testing shall be done
in accordance with test method 3015 of MIL-STD-883 (The testing procedure defined within JESD-22-A114 may be
used as an alternate with acceptable correlation data), and the applicable device specification or drawing (see
A.3.6.9.2). Devices shall be handled in accordance with the manufacturer's in-house control documentation.
Handling documentation shall be maintained by the manufacturer. Guidance for device handling is available in EIASTD-625.
Page 65
A.4.9.3.7, Add footnote 1/,
1/ The self-audit shall include any activities performed by a subcontractor, and shall ensure full compliance
by the subcontractor to this appendix and the device specification or drawing. Any deviations or
questionable areas shall be brought to the attention of the qualifying activity.
*
A.5.1 Modify paragraph to delete reference to JESD-22-A114:
from: “…class 1 or 2 by test method 3015 of MIL-STD-883 or JESD-22-A114 (see A.4.4.2.8) …”
to: “…class 1 or 2 by test method 3015 of MIL-STD-883…”
Page 107
*
*
Table H-IIA, Group number 5, Add “JESD-22-A114 1/ “ as alternate method to TM3015.
1/ ESD classification level is as defined within test method 3015
Table H-IIB, Group number 9, Add “JESD-22-A114 4/ ” as alternate method to TM3015.
4/ ESD classification level is as defined within test method 3015
The margins of this amendment are marked with an asterisk to indicate where changes from the previous
amendment were made. This was done as a convenience only and the Government assumes no liability whatsoever
for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this
document based on the entire content irrespective of the marginal notations and relationship to the last previous
amendment.
CONCLUDING MATERIAL
Custodians:
Army - CR
Navy - EC
Air Force – 11
NASA - NA
DLA - CC
Review activities:
Army - MI, SM
Navy - MC, TD, AS, CG, OS, SH
Air Force - 19, 99
Civil agency coordinating activity:
DOT-FAA(RD-650)
Preparing activity:
DLA - CC
(Project 5962-1882)
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MIL-PRF-38535E
AMENDMENT 5
APPENDIX A
TABLE A-I. Testing guidelines for changes identified as major.
Major changes
Testing, MIL-STD-883, test method 5005 (All electrical
parameters in accordance with the device specification or
drawing 1/)
a.
Doping material source concentration
Process technique
Group A and C-1 deltas (variables only when deltas are
required)
b.
Diffusion profile
Group A and C-1 deltas (variables only when deltas are
required)
c.
Die structure
Group A and C-1 deltas (variables only when deltas are
required)
d.
Mask changes affecting die size or active
element
Wafer diameter
Variable group A, C-1 prior to shipment, and notify qualifying
activity if new area is smaller/larger in applicable package than
previously qualified.
Group A, C-1 prior to shipment
Final die thickness
Group D-3
e.
Passivation/glassivation
f.
Metallization changes
Group A, C-1 and glass integrity test if current density is over
5
2 x 10
Group A, C-1, and B-5
g.
Die attach method
D-3 and D-4
h.
Die attach process
D-3 and D-4
i.
Bond process
B-5 and D-3
j.
Bond wire material/dimension
B-5 and D-3
k.
Package or lid structure
D-1 (variables), D-3, D-4, D-8 (lid torque) (variables)
l.
Package or lid material
D-3, D-4, D-5, D-6 (variables), and D-8 (lid torque) (variables)
Package or lid dimension
D-1 (variables), D-2, and D-8 (lid torque) (variables)
Lead frame material
See A.4.4.2.7
Lead frame dimension
D-1 (variables) and D-2
Cavity dimension
B-5, D-2, D-6 (variables), and D-8 (lid torque) (variables)
Sealing profile
D-3, D-4, D-6 (variables), and D-8 (lid torque) (variables)
Sealing material
D-3, D-4, D-6 (variables), and D-8 (lid torque) (variables)
Frame attach
B-3, D-3, D-4, D-6 (variables), and D-7 (adhesion of lead finish)
(variables)
B-3, D-2, D-3, and D-7 (adhesion of lead finish)
Frame cleaning
m.
Implementation of test methods
Notify qualifying activity (may involve test demonstration)
n.
Critical documents (see A.4.8.1.3b)
Notify qualifying activity (may involve test demonstration)
o.
Fab move
Group A and C
p.
Assembly move
Group D per each package family (see A.3.1.3.30) prior to ship
Supersedes page 33 of MIL-PRF-38535E, dated 1 December 1997.
33
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MIL-PRF-38535E
AMENDMENT 5
APPENDIX A
TABLE A-I. Testing guidelines for changes identified as major - Continued.
Major changes
Testing, MIL-STD-883, test method 5005 (All electrical
parameters in accordance with the device specification or
drawing 1/)
q.
Test facility move
Notify qualifying activity
r.
Scribe/die separation
s.
Qualification/QCI procedures
5 SEM photographs of randomly selected die showing one full
edge of die front and back
Notify qualifying activity
t.
Passivation for RHA
u.
Diffusion profile for RHA
v.
Sinter/anneal for RHA
Group A, E, C-1, and glass integrity test if current density is over
5
2 x 10
Group A, E, and C-1 deltas (variables only when deltas are
required).
Group A, E, C-1, and B-5
1/ This table is for class level B subgroups only. For class level S, use the equivalent class level S subgroups.
The current density shall be calculated at the point(s) of maximum current density (i.e., greatest current (see
A.3.5.5a) per unit cross section) for the specific device type and schematic or configuration. Individual device
calculations are not required when appropriate documented design rules or requirements have been used, which
limit or control the current density in the resulting design.
a.
Use a current value equal to the maximum continuous current (at full fanout for digitals or at maximum load
for linears) or equal to the simple time-averaged current obtained at maximum rated frequency and duty
cycle with maximum load, whichever results in the greater current value at the point(s) of maximum current
density. This current value shall be determined at the maximum recommended supply voltage(s) and with
the current assumed to be uniform over the entire conductor cross-sectional area.
b.
Use the minimum allowed metal thickness in accordance with manufacturing specifications and controls
including appropriate allowance for thinning experienced in the metallization step. The thinning factor over
a metallization step is not required unless the point of maximum current density is located at the step.
c.
Use the minimum actual design conductor widths (not mask widths) including appropriate allowance for
narrowing or undercutting experienced in metal etching.
d.
Areas of barrier metals, not intended by design to contribute to current carrying capacity, and
nonconducting material shall not be included in the calculation of conductor cross section.
Thick film conductors multichip substrates (metallization strips, bonding interfaces, etc.) shall be designated so that
2
no properly fabricated conductor shall dissipate more than 4 watts/cm when carrying, maximum design current.
A.3.5.5.1 Metallization thickness. For class level S microcircuits, the minimum metallization thickness shall be
8,000 & (800 nm) for single level metal and for the top level of multi-level metal, and 5,000 & (500 nm) for the lower
level(s) of multi-level metal. In all cases, the current density requirements of A.3.5.5 shall also be satisfied.
A.3.5.5.2 Internal wire size and material. For class level S microcircuits, the internal wire diameter shall be .001
inch minimum (0.03 mm) and the internal lead wire shall be of the same metal as the die metallization.
A.3.5.5.3 Internal lead wires. Internal lead wires or other conductors which are not in thermal contact with a
substrate along their entire length (such as wire or ribbon conductors) shall be designed to experience, at maximum
rated current, a continuous current for direct current, or an RMS current (peak current divided by 2), for alternating
or pulsed current, not to exceed the values established by the following relationship:
Reprinted without change.
34
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STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter
should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7, and send to the preparing activity.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive
any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1.
DOCUMENT NUMBER
MIL-PRF-38535 Rev E Amendment 5
2.
DOCUMENT DATE (YYMMDD)
01/01/16
3. DOCUMENT TITLE
INTEGRATED CIRCUITS (MICROCIRCUITS) MANUFACTURING, GENERAL SPECIFICATION FOR
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
(1) Commercial
7. DATE SUBMITTED
(YYMMDD)
(2) DSN
(If applicable)
8. PREPARING ACTIVITY
a. NAME
DEFENSE SUPPLY CENTER, COLUMBUS
ATTN: DSCC-VAC
c. ADDRESS (Include Zip Code)
P.O. BOX 3990
COLUMBUS, OH 43216-5000
DD Form 1426, FEB 1999 (EG)
b. TELEPHONE (Include Area Code)
(1) Commercial 614-692-0547
(2) DSN 850-0547
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman Road, Suite 2533
Fort Belvoir, Virginia 22060-6221
Telephone (703) 767-6888
DSN 427-6888
PREVIOUS EDITION IS OBSOLETE.