BGB707L7ESD
TR122
BGB707L7ESD LNA for 2.3 to
2.7GHz Application
Technical Report
Revision: Rev. 1.2, 2009-06-24
RF and Protection Devices
Edition 2009-06-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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Technical Report TR122
BGB707L7ESD LNA for 2.3 to 2.7GHz Application
Technical Report TR122
Revision History: 2009-06-24
Previous Revision: Rev 1.1
Page
Subjects (major changes since last revision)
9
On/Off Switching Time added to the performance table and graph.
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MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc.
MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of
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Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
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UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™
of Diodes Zetex Limited.
Last Trademarks Update 2009-10-19
Technical Report TR122, Rev. 1.2
3 / 13
2009-06-24
Technical Report TR122
LNA using BGB707L7ESD for 2.3 to 2.7GHz Applications
_____________________________________________________________________
1. Overview
Infineon Device:
BGB707L7ESD (final version)
Application: LNA for 2.3 to 2.7GHz Applications
PCB Marking: BGB7-Family TSLP-7-1 Ver 2.0
2. Summary of Measurement Results
Table 1: Summary of Measurement Results
Parameter
Symbol
Value
Unit
Frequency Range
Freq
2.6
GHz
DC Voltage
Vcc
2.8
V
DC Current
Icc
5.6
mA
Gain
G
15
dB
Gain(off mode)
G
-18
dB
Noise Figure
NF
1.15
dB
Input Return Loss
RLin
13.2
dB
Output Return Loss
RLout
12.0
dB
Reverse Isolation
IRev
27.8
dB
Input P1dB
IP1dB
-9.6
dBm
Output P1dB
OP1dB
4.4
dBm
Input IP3
IIP3
-1.4
dBm
Output IP3
OIP3
13.6
dBm
On Switching Time
Ton
1.5
µs
Off Switching Time
Toff
4.2
µs
Stability
k
>1
--
Measurement Report
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Note/Test Condition
Power @ port1= -30 dBm
Including SMA connectors
and PCB losses of 0.1dB
Power @ port2 = -10 dBm
Power @ Input = -30 dBm
∆f =1 MHz
Measured with C2=1nF
Stability measured up to 10GHz
2009-06-24
Technical Report TR122
LNA using BGB707L7ESD for 2.3 to 2.7GHz Applications
_____________________________________________________________________
1
Description
This report presents the measurement results of the Low Noise Amplifier using the SiGe:C LNA
BGB707L7ESD from Infineon Technologies for the applications in the frequency range of 2.3 to
2.7GHz, such as SDMB, WLAN, WiMAX, Bluetooth, CMMB and other wireless applications. The LNA
brings a gain of 15dB on the frequency of 2.6GHz with a noise figure of 1.15 dB (including the SMA
connector and PCB losses of 0.1dB).
Furthermore, this device provides an unconditionally stability up to 10GHz. With a current of 5.6mA,
this circuit achieves a high output P1dB of +4.4dBm and IP3 of +13.6 dBm.
Revision 1.1:
- On/Off Switching Time added to the performance table and graph.
Revision 1.2:
- update the results and schematics with the final version of BGB707L7ESD devices (R2 changed to
2.7kohm).
- expand the applications to the frequency range from 2.3 to 2.7GHz.
Measurement Report
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2009-06-24
Technical Report TR122
LNA using BGB707L7ESD for 2.3 to 2.7GHz Applications
_____________________________________________________________________
2
Schematics
Figure 1: Schematic of the BGB707L7ESD for 2.3 to 2.7GHz Application.
Table 2: Bill of Materials
Symbol
Value
Unit
Size
Manufacturer
Comment
C1
3.9
pF
0402
various
Input Matching/DC Block
C2
1
nF
0402
various
RF Bypass
C3
39
pF
0402
various
Negative Feedback
C4
10
nF
0402
various
RF Bypass
C5
10
pF
0402
various
Output Matching/DC Block
L1
2.9
nH
0402
Murata LQW15
Input Matching/Biasing
L2
40
nH
0402
Murata LQW15
DC Feed to collector/RF block
R1
1.5
kΩ
0402
various
Negative Feedback
R2
2.7
kΩ
0402
various
DC current Regulation
R3
22
Ω
0402
various
Stabilisation/Output Matching
Q1
Measurement Report
TSLP7Infineon
1
6 / 13
SiGe MMIC LNA with integrated ESD
protection
2009-06-24
Technical Report TR122
LNA using BGB707L7ESD for 2.3 to 2.7GHz Applications
_____________________________________________________________________
3
Measured Graphs
Figure 3: Transducer Power Gain of the BGB707L7ESD.
Figure 4: Input Matching of the BGB707L7ESD.
Measurement Report
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Technical Report TR122
LNA using BGB707L7ESD for 2.3 to 2.7GHz Applications
_____________________________________________________________________
Figure 5: Output Matching of the BGB707L7ESD.
Figure 6: Reverse Isolation of the BGB707L7ESD.
Measurement Report
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2009-06-24
Technical Report TR122
LNA using BGB707L7ESD for 2.3 to 2.7GHz Applications
_____________________________________________________________________
Figure 7: Stability of the BGB707L7ESD.
Figure 8: OIP3 of the BGB707L7ESD.
Measurement Report
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2009-06-24
Technical Report TR122
LNA using BGB707L7ESD for 2.3 to 2.7GHz Applications
_____________________________________________________________________
Figure 9: Off-Switching time of the BGB707L7ESD.
Figure 10: On-switching time of the BGB707L7ESD.
Measurement Report
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Technical Report TR122
BGB707L7ESD LNA for 2.3 to 2.7GHz Application
3. Evaluation Board and Layout Information
Figure 11: PCB Picture of the BGB707L7ESD
Figure 6-2: Layout Information
Figure 12: Layout Information
Measurement Report
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2009-06-24
Technical Report TR122
BGB707L7ESD LNA for 2.3 to 2.7GHz Application
Authors:
Anthony Thomas, Application Engineer of Business Unit “RF and Protection Devices”
Dr. Chih-I Lin, Senior Staff Engineer of Business Unit “RF and Protection Devices”
Measurement Report
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2009-06-24
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Published by Infineon Technologies AG
TR122